| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MMSZ4701T1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode Mounting: SMD Tolerance: ±5% Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Manufacturer series: MMSZ4xxTxG Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 5611 шт: термін постачання 14-30 дні (днів) |
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BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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US1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SM15T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 10A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 2 Version: ESD |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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| GBPC1510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC1510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV2393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA Type of integrated circuit: comparator Number of comparators: 2 Operating voltage: 2.7...16V Mounting: SMT Case: SO8 Operating temperature: -65...150°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 1pA Input bias current: 1pA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT366ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD Manufacturer series: HCT Operating temperature: -55...125°C Technology: CMOS; TTL Kind of package: reel; tape Case: SOIC16 Family: HCT Kind of integrated circuit: 3-state; buffer; hex; inverting Number of channels: 6 Mounting: SMD Supply voltage: 2...6V DC Type of integrated circuit: digital Kind of output: 3-state |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NXH450B100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit Mechanical mounting: screw Technology: SiC Application: for UPS; Inverter Max. off-state voltage: 1kV Electrical mounting: Press-Fit Semiconductor structure: SiC diode/transistor Gate-emitter voltage: ±20V Collector current: 450A Type of semiconductor module: IGBT |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||||
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74LCX32MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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| MC100EP101FAG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8 Type of integrated circuit: digital Kind of gate: NOR; OR Number of channels: 4 Number of inputs: 16 Technology: ECL Mounting: SMD Manufacturer series: 100EP Operating temperature: -40...85°C Number of outputs: 8 Supply voltage: 3...5.5V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||||||||
| FCP400N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220-3 Kind of package: tube Polarisation: unipolar Gate charge: 43nC On-state resistance: 0.4Ω Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 195W Drain-source voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SD12CT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 1539 шт: термін постачання 14-30 дні (днів) |
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NC7WZ17P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC70-6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA Kind of input: with Schmitt trigger Operating temperature: -40...85°C |
на замовлення 5998 шт: термін постачання 14-30 дні (днів) |
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NC7WZ17P6X-L22347 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA Kind of input: with Schmitt trigger Part status: Not recommended for new designs |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC79M08BDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -8V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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1N5233B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 4016 шт: термін постачання 14-30 дні (днів) |
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1N5235BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4684 шт: термін постачання 14-30 дні (днів) |
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1N5230BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N52xxB |
на замовлення 4524 шт: термін постачання 14-30 дні (днів) |
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| 1N5237BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1N5231BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; reel,tape Mounting: THT Tolerance: ±5% Manufacturer series: 1N52xxB Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AG Zener voltage: 5.1V Type of diode: Zener |
на замовлення 4863 шт: термін постачання 14-30 дні (днів) |
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| 1N5232B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5234BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5251BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5232BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5233BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; reel,tape; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5234C | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5235B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS1100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.75V Max. off-state voltage: 0.1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
на замовлення 19818 шт: термін постачання 14-30 дні (днів) |
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| MMBTA63 | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Frequency: 125MHz Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||||
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MMBTA64 | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJE5852G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Collector-emitter voltage: 400V Power dissipation: 80W Polarisation: bipolar Type of transistor: PNP Current gain: 15 Kind of package: tube Case: TO220AB Collector current: 8A Mounting: THT |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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| NCV5652MUTWG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV Kind of package: reel; tape Type of integrated circuit: operational amplifier Number of channels: dual; 2 Case: uDFN12 Mounting: SMT Operating temperature: -40...125°C Input offset current: 100nA Input bias current: 1µA Input offset voltage: 15mV Slew rate: 1.5V/μs Voltage supply range: 3.3...13.2V DC Bandwidth: 350kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HUF75652G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247 Kind of package: tube Kind of channel: enhancement Case: TO247 Mounting: THT Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Gate charge: 475nC On-state resistance: 8mΩ Gate-source voltage: ±20V Drain current: 75A Drain-source voltage: 100V Power dissipation: 515W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR1560CT | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. forward impulse current: 15A Kind of package: tube Max. load current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRA160T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.475V Kind of package: reel; tape Max. load current: 2.1A |
на замовлення 9642 шт: термін постачання 14-30 дні (днів) |
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NSR02100HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Max. forward impulse current: 2A Max. forward voltage: 0.95V Max. off-state voltage: 0.1kV Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 Type of diode: Schottky switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMA5914BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZ1SMA5914BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT273WM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Manufacturer series: HCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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| FNB40560 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V Type of integrated circuit: driver Output current: 5A DC supply current: 3.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Supply voltage: 300V Insulation voltage: 2kV Power dissipation: 29W Collector-emitter voltage: 600V |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV1117ST33T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
на замовлення 1546 шт: термін постачання 14-30 дні (днів) |
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MC33269DTRK-3.3G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MCH6541-TL-E | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A Kind of transistor: complementary pair Mounting: SMD Case: MCPH6 Type of transistor: NPN / PNP Kind of package: reel; tape Power dissipation: 0.55W Collector current: 0.7A Collector-emitter voltage: 30V Current gain: 300...800 Frequency: 540MHz Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||||
| N24C008C4DTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial Operating temperature: -40...85°C Mounting: SMD Access time: 400ns Type of integrated circuit: EEPROM memory Kind of interface: serial Memory organisation: 1kx8bit Case: WLCSP4 Interface: I2C Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
NDS9945 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 On-state resistance: 0.3Ω Mounting: SMD Power dissipation: 2W Gate charge: 30nC Polarisation: unipolar Technology: PowerTrench® Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP125N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220-3 On-state resistance: 0.125Ω Mounting: THT Pulsed drain current: 77A Power dissipation: 152W Gate charge: 37.3nC |
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В кошику од. на суму грн. | ||||||||||||||||||
 |
FQA90N15 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQA90N15-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
FCPF067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Pulsed drain current: 110A Power dissipation: 46W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||||||
| NSVBAV99WT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: small signal Case: SC70 Kind of package: reel; tape Max. forward voltage: 1V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCP398FCCT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; surge stopper; WLCSP4 Kind of integrated circuit: surge stopper Case: WLCSP4 Mounting: SMD Application: USB port ESD protection Type of integrated circuit: driver Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP398MUTBG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; surge stopper; uDFN6 Kind of integrated circuit: surge stopper Case: uDFN6 Mounting: SMD Application: USB port ESD protection Type of integrated circuit: driver Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MJ4502G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
на замовлення 102 шт: термін постачання 14-30 дні (днів) |
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| MMSZ4701T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5611 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 114+ | 3.69 грн |
| 192+ | 2.19 грн |
| 500+ | 1.57 грн |
| 1000+ | 1.47 грн |
| BD239CTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 40
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В кошику
од. на суму грн.
| US1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NRVUS1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| SM15T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.16 грн |
| 22+ | 19.60 грн |
| 25+ | 17.34 грн |
| 50+ | 12.99 грн |
| GBPC1510 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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В кошику
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| GBPC1510W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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В кошику
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| NCV2393DR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
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| MC74HCT366ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Manufacturer series: HCT
Operating temperature: -55...125°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: SOIC16
Family: HCT
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Mounting: SMD
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Manufacturer series: HCT
Operating temperature: -55...125°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: SOIC16
Family: HCT
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Mounting: SMD
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Kind of output: 3-state
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NXH450B100H4Q2F2PG |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Mechanical mounting: screw
Technology: SiC
Application: for UPS; Inverter
Max. off-state voltage: 1kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Mechanical mounting: screw
Technology: SiC
Application: for UPS; Inverter
Max. off-state voltage: 1kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Type of semiconductor module: IGBT
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику
од. на суму грн.
| 74LCX32MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
товару немає в наявності
Мінімальне замовлення: 3 шт
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| 74LCX32MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.46 грн |
| 25+ | 17.26 грн |
| 26+ | 16.59 грн |
| MC100EP101FAG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| FCP400N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
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| SZESD9X5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
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| SD12CT1G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 1539 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.87 грн |
| 20+ | 21.28 грн |
| 24+ | 17.76 грн |
| 100+ | 9.30 грн |
| 500+ | 8.38 грн |
| NC7WZ17P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
на замовлення 5998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 125+ | 3.35 грн |
| 143+ | 2.95 грн |
| 156+ | 2.70 грн |
| 169+ | 2.49 грн |
| 250+ | 2.26 грн |
| 500+ | 2.12 грн |
| 1000+ | 2.00 грн |
| 3000+ | 1.99 грн |
| NC7WZ17P6X-L22347 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
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Мінімальне замовлення: 10 шт
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| MC79M08BDTRKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.19 грн |
| 16+ | 27.81 грн |
| 17+ | 25.64 грн |
| 25+ | 22.96 грн |
| 50+ | 21.20 грн |
| 100+ | 19.77 грн |
| 250+ | 18.26 грн |
| 1N5233B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 4016 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 109+ | 3.85 грн |
| 203+ | 2.07 грн |
| 500+ | 1.44 грн |
| 1000+ | 1.29 грн |
| 1N5235BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4684 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 109+ | 3.85 грн |
| 241+ | 1.74 грн |
| 265+ | 1.58 грн |
| 271+ | 1.55 грн |
| 500+ | 1.48 грн |
| 1000+ | 1.42 грн |
| 2000+ | 1.37 грн |
| 1N5230BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
на замовлення 4524 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 112+ | 3.77 грн |
| 164+ | 2.56 грн |
| 199+ | 2.11 грн |
| 217+ | 1.94 грн |
| 500+ | 1.73 грн |
| 677+ | 1.42 грн |
| 1860+ | 1.34 грн |
| 1N5237BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| 1N5231BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; reel,tape
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 5.1V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; reel,tape
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 5.1V
Type of diode: Zener
на замовлення 4863 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 85+ | 4.94 грн |
| 108+ | 3.89 грн |
| 132+ | 3.18 грн |
| 160+ | 2.63 грн |
| 200+ | 2.24 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.70 грн |
| 2000+ | 1.58 грн |
| 1N5232B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
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| 1N5234BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5251BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| 1N5232BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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од. на суму грн.
| 1N5233BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; reel,tape; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; CASE017AG; single diode; reel,tape; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1N5234C |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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| 1N5235B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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од. на суму грн.
| MBRS1100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.75V
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.75V
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
на замовлення 19818 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.07 грн |
| 18+ | 23.29 грн |
| 20+ | 21.95 грн |
| 50+ | 18.18 грн |
| 100+ | 16.42 грн |
| 140+ | 6.79 грн |
| 385+ | 6.45 грн |
| 5000+ | 6.20 грн |
| MMBTA63 |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 125MHz
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 125MHz
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 25 шт
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од. на суму грн.
| MMBTA64 |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
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| MMBTA64LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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| SMMBTA64LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MJE5852G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Power dissipation: 80W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 15
Kind of package: tube
Case: TO220AB
Collector current: 8A
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Power dissipation: 80W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 15
Kind of package: tube
Case: TO220AB
Collector current: 8A
Mounting: THT
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.18 грн |
| 10+ | 173.42 грн |
| NCV5652MUTWG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Case: uDFN12
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 100nA
Input bias current: 1µA
Input offset voltage: 15mV
Slew rate: 1.5V/μs
Voltage supply range: 3.3...13.2V DC
Bandwidth: 350kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Case: uDFN12
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 100nA
Input bias current: 1µA
Input offset voltage: 15mV
Slew rate: 1.5V/μs
Voltage supply range: 3.3...13.2V DC
Bandwidth: 350kHz
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| HUF75652G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Kind of package: tube
Kind of channel: enhancement
Case: TO247
Mounting: THT
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 475nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 100V
Power dissipation: 515W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Kind of package: tube
Kind of channel: enhancement
Case: TO247
Mounting: THT
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 475nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 100V
Power dissipation: 515W
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| MBR1560CT |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 15A
Kind of package: tube
Max. load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 15A
Kind of package: tube
Max. load current: 15A
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| MBRA160T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.475V
Kind of package: reel; tape
Max. load current: 2.1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.475V
Kind of package: reel; tape
Max. load current: 2.1A
на замовлення 9642 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.99 грн |
| 18+ | 24.46 грн |
| 20+ | 21.03 грн |
| 50+ | 15.33 грн |
| 100+ | 13.57 грн |
| 178+ | 5.45 грн |
| 487+ | 5.11 грн |
| NSR02100HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.1kV
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.1kV
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
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| 1SMA5914BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
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| SZ1SMA5914BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MM74HCT273WM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.74 грн |
| 11+ | 39.21 грн |
| FNB40560 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V
Type of integrated circuit: driver
Output current: 5A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Supply voltage: 300V
Insulation voltage: 2kV
Power dissipation: 29W
Collector-emitter voltage: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V
Type of integrated circuit: driver
Output current: 5A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Supply voltage: 300V
Insulation voltage: 2kV
Power dissipation: 29W
Collector-emitter voltage: 600V
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Мінімальне замовлення: 12 шт
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| NCV1117ST33T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
на замовлення 1546 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.76 грн |
| 16+ | 27.73 грн |
| 25+ | 25.89 грн |
| 60+ | 16.17 грн |
| 164+ | 15.25 грн |
| MC33269DTRK-3.3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MCH6541-TL-E |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A
Kind of transistor: complementary pair
Mounting: SMD
Case: MCPH6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Power dissipation: 0.55W
Collector current: 0.7A
Collector-emitter voltage: 30V
Current gain: 300...800
Frequency: 540MHz
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A
Kind of transistor: complementary pair
Mounting: SMD
Case: MCPH6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Power dissipation: 0.55W
Collector current: 0.7A
Collector-emitter voltage: 30V
Current gain: 300...800
Frequency: 540MHz
Polarisation: bipolar
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| N24C008C4DTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial
Operating temperature: -40...85°C
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Memory organisation: 1kx8bit
Case: WLCSP4
Interface: I2C
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial
Operating temperature: -40...85°C
Mounting: SMD
Access time: 400ns
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Memory organisation: 1kx8bit
Case: WLCSP4
Interface: I2C
Kind of memory: EEPROM
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Мінімальне замовлення: 5000 шт
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| NDS9945 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 2W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
On-state resistance: 0.3Ω
Mounting: SMD
Power dissipation: 2W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
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Мінімальне замовлення: 2500 шт
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| FDS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| NTP125N60S5H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.125Ω
Mounting: THT
Pulsed drain current: 77A
Power dissipation: 152W
Gate charge: 37.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.125Ω
Mounting: THT
Pulsed drain current: 77A
Power dissipation: 152W
Gate charge: 37.3nC
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| FQA90N15 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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| FQA90N15-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF067N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Pulsed drain current: 110A
Power dissipation: 46W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Pulsed drain current: 110A
Power dissipation: 46W
Kind of package: tube
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| NSVBAV99WT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SC70
Kind of package: reel; tape
Max. forward voltage: 1V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SC70
Kind of package: reel; tape
Max. forward voltage: 1V
Application: automotive industry
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| NCP398FCCT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; WLCSP4
Kind of integrated circuit: surge stopper
Case: WLCSP4
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; WLCSP4
Kind of integrated circuit: surge stopper
Case: WLCSP4
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
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| NCP398MUTBG |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; uDFN6
Kind of integrated circuit: surge stopper
Case: uDFN6
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; uDFN6
Kind of integrated circuit: surge stopper
Case: uDFN6
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
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| MJ4502G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
на замовлення 102 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 666.74 грн |
| 2+ | 515.23 грн |
| 6+ | 486.75 грн |
| 10+ | 477.53 грн |
| 50+ | 468.32 грн |