| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| NCP51530BMNTWG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Mounting: SMD Case: DFN10 Operating temperature: -40...125°C Output current: -3...3.5A Pulse fall time: 15ns Impulse rise time: 15ns Supply voltage: 10...17V DC Voltage class: 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3170 шт: термін постачання 14-30 дні (днів) |
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LM2576D2TR4-012G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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1N5927BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB |
на замовлення 5309 шт: термін постачання 14-30 дні (днів) |
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MMSZ5266BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 68V Manufacturer series: MMSZ52xxB |
на замовлення 694 шт: термін постачання 14-30 дні (днів) |
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| NTMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C410NLAFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14528BDG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: tube Number of inputs: 3 |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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74VHC123AMTCX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC123AMX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3082M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3082SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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| MOC3082SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3082SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3082SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3082TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3082VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCV72 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
| NRVBB40L45CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. load current: 20A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSS40501UW3T2G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Kind of package: reel; tape Case: WDFN3 Frequency: 150MHz Collector current: 5A Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar Application: automotive industry Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSS40500UW3T2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Kind of package: reel; tape Case: WDFN3 Collector current: 5A Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar Application: automotive industry Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SZ74L8X | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: UQFN8 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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MBRS3100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Kind of package: reel; tape |
на замовлення 3647 шт: термін постачання 14-30 дні (днів) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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CNY171M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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FDS4470 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD On-state resistance: 14mΩ Power dissipation: 2.5W Gate-source voltage: ±20V Drain current: 12.5A Drain-source voltage: 40V Case: SO8 Kind of package: reel; tape |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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MBRF2545CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.62V Max. off-state voltage: 45V Load current: 12.5A x2 Max. load current: 25A Max. forward impulse current: 150A Case: TO220FP Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 591 шт: термін постачання 14-30 дні (днів) |
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SS39 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 90V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2735 шт: термін постачання 14-30 дні (днів) |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC70 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDS2582 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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| FDMS86202 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 64A Pulsed drain current: 240A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS86202ET120 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 72A Pulsed drain current: 538A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11G2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: THT Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 100%@10mA Insulation voltage: 4.17kV Case: DIP6 Kind of output: Darlington Type of optocoupler: optocoupler |
на замовлення 267 шт: термін постачання 14-30 дні (днів) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Mounting: THT Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Frequency: 40MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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H11G1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: Gull wing 6 Collector-emitter voltage: 100V CTR@If: 100%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| H11G2SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Manufacturer series: H11G_ Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 80V CTR@If: 1000%@10mA Insulation voltage: 4.17kV Case: PDIP6 Kind of output: Darlington Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Polarisation: bipolar Case: D2PAK Type of transistor: PNP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modulesDescription: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM20 Gate-source voltage: -8...18V On-state resistance: 10mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 900V Power dissipation: 352W Topology: NTC thermistor; Vienna Rectifier Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 350A Pulsed drain current: 700A Drain-source voltage: 1.2kV Power dissipation: 979W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH004P120M3F2PTNG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 338A Pulsed drain current: 676A Drain-source voltage: 1.2kV Power dissipation: 1098W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 435A Pulsed drain current: 870A Drain-source voltage: 1.2kV Power dissipation: 1482W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH004P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 284A Pulsed drain current: 568A Drain-source voltage: 1.2kV Power dissipation: 785W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 15.9mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 1.2kV Power dissipation: 353W Topology: H-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 15mΩ Drain current: 127A Pulsed drain current: 387A Drain-source voltage: 1.2kV Power dissipation: 371W Topology: 3-level inverter TNPC Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH011F120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 21.9mΩ Drain current: 105A Pulsed drain current: 316A Drain-source voltage: 1.2kV Power dissipation: 244W Topology: H-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH011T120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 28.1mΩ Drain current: 91A Pulsed drain current: 273A Drain-source voltage: 1.2kV Power dissipation: 272W Topology: 3-level inverter TNPC Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH400N100H4Q2F2PG | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42 Type of semiconductor module: IGBT Semiconductor structure: SiC diode/transistor Max. off-state voltage: 1kV Collector current: 400A Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Technology: SiC Mechanical mounting: screw Case: PIM42 |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||
| 4N35SVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: SMD6 Turn-on time: 2µs Turn-off time: 2µs Max. off-state voltage: 6V Number of pins: 6 Manufacturer series: 4N35 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MC33269DTRK-5.0G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Operating temperature: -40...125°C Output voltage: 5V Tolerance: ±1% Manufacturer series: MC33269 Input voltage: 1.35...10V Voltage drop: 1.1V |
на замовлення 3849 шт: термін постачання 14-30 дні (днів) |
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MC33269DT-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Operating temperature: -40...125°C Output voltage: 3.3V Tolerance: ±1% Manufacturer series: MC33269 Input voltage: 1.35...10V Voltage drop: 1.1V |
на замовлення 234 шт: термін постачання 14-30 дні (днів) |
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MC33269D-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 1 Voltage drop: 1.1V Operating temperature: -40...125°C Output voltage: 3.3V Tolerance: ±1% Manufacturer series: MC33269 Input voltage: 1.35...10V |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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MC33269DR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Voltage drop: 1.1V Operating temperature: -40...125°C Output voltage: 1.25...18.65V Tolerance: ±1% Manufacturer series: MC33269 Input voltage: 1.35...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33269ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC33269DR2-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33269T-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33269DR2-5.0G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MMBT5401 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| NCP51530BMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
товару немає в наявності
В кошику
од. на суму грн.
| NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3170 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.20 грн |
| 11+ | 40.44 грн |
| 50+ | 34.34 грн |
| 100+ | 32.37 грн |
| 200+ | 30.31 грн |
| 250+ | 29.57 грн |
| 500+ | 26.52 грн |
| 1000+ | 25.78 грн |
| LM2576D2TR4-012G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.06 грн |
| 10+ | 134.24 грн |
| 1N5927BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
на замовлення 5309 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.04 грн |
| 23+ | 18.12 грн |
| 28+ | 14.74 грн |
| 100+ | 8.98 грн |
| 250+ | 8.24 грн |
| MMSZ5266BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
на замовлення 694 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.32 грн |
| 120+ | 3.46 грн |
| 129+ | 3.21 грн |
| 172+ | 2.40 грн |
| 500+ | 1.89 грн |
| NTMJS0D9N04CLTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMFS5C410NLAFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMJS0D9N04CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC14528BDG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 3
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 3
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.44 грн |
| 13+ | 33.19 грн |
| 25+ | 27.51 грн |
| 48+ | 24.54 грн |
| 96+ | 22.15 грн |
| 144+ | 21.08 грн |
| 74VHC123AMTCX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC123AMX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| MOC3082M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
товару немає в наявності
В кошику
од. на суму грн.
| MOC3082SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.29 грн |
| 11+ | 41.10 грн |
| 50+ | 38.38 грн |
| MOC3082SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
товару немає в наявності
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| MOC3082SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
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| MOC3082SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| MOC3082TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| MOC3082VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| BCV72 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| NRVBB40L45CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NSS40501UW3T2G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
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| NSS40500UW3T2G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
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| NC7SZ74L8X |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.51 грн |
| 28+ | 15.15 грн |
| 31+ | 13.59 грн |
| 36+ | 11.69 грн |
| 100+ | 9.72 грн |
| 250+ | 9.31 грн |
| 500+ | 9.14 грн |
| MBRS3100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
на замовлення 3647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.25 грн |
| 18+ | 23.72 грн |
| 20+ | 21.25 грн |
| 50+ | 17.46 грн |
| 100+ | 16.55 грн |
| 500+ | 14.91 грн |
| 1000+ | 13.75 грн |
| 2500+ | 12.60 грн |
| CNY17F4TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.25 грн |
| 26+ | 16.31 грн |
| 31+ | 13.42 грн |
| 100+ | 11.78 грн |
| CNY171M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.67 грн |
| 18+ | 24.05 грн |
| 26+ | 15.98 грн |
| 100+ | 13.18 грн |
| FDS4470 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.17 грн |
| 5+ | 102.12 грн |
| 25+ | 90.59 грн |
| 100+ | 83.18 грн |
| MBRF2545CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 591 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.18 грн |
| 5+ | 96.36 грн |
| 10+ | 76.59 грн |
| 50+ | 65.89 грн |
| SS39 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2735 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.33 грн |
| 10+ | 43.98 грн |
| 11+ | 41.01 грн |
| 25+ | 36.90 грн |
| 100+ | 30.55 грн |
| 250+ | 29.57 грн |
| SBAT54CTT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| FDS2582 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.87 грн |
| FDMS86202 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86202ET120 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| H11G2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.99 грн |
| 11+ | 39.37 грн |
| 13+ | 32.86 грн |
| 25+ | 27.92 грн |
| MJF45H11G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Frequency: 40MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Frequency: 40MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 137.47 грн |
| 5+ | 102.12 грн |
| 10+ | 78.24 грн |
| H11G1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
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| H11G2SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
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| MJB45H11G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
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| NXH020U90MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
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| NXH003P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH004P120M3F2PTNG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH003P120M3F2PTNG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH006P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH004P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH006P120MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH007F120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH008T120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH011F120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH011T120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH400N100H4Q2F2PG |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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Мінімальне замовлення: 36 шт
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| 4N35SVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 13.48 грн |
| MC33269DTRK-5.0G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: -40...125°C
Output voltage: 5V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: -40...125°C
Output voltage: 5V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
на замовлення 3849 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.48 грн |
| 18+ | 23.39 грн |
| 25+ | 21.82 грн |
| 100+ | 19.60 грн |
| 250+ | 18.20 грн |
| 500+ | 17.05 грн |
| 1000+ | 15.90 грн |
| 2500+ | 14.50 грн |
| MC33269DT-3.3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: -40...125°C
Output voltage: 3.3V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Operating temperature: -40...125°C
Output voltage: 3.3V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
на замовлення 234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 13+ | 33.11 грн |
| 15+ | 27.67 грн |
| 75+ | 21.74 грн |
| MC33269D-3.3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 3.3V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 3.3V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.12 грн |
| 14+ | 30.39 грн |
| MC33269DR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 1.25...18.65V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 1.25...18.65V
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
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| MC33269ST-3.3T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
товару немає в наявності
В кошику
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| MC33269DR2-3.3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 3.3V
товару немає в наявності
В кошику
од. на суму грн.
| MC33269T-3.3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Output voltage: 3.3V
товару немає в наявності
В кошику
од. на суму грн.
| MC33269DR2-5.0G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| MMBT5401 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
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од. на суму грн.































