| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FODM2701R2 | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Collector-emitter voltage: 40V Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSQ110 | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 19Ω Duty cycle factor: 55...65% Power: 12W Application: SMPS Operating voltage: 8...19V DC |
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В кошику од. на суму грн. | ||||||||||||||
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P6KE160A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NC7WZ07P6X-L22347 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
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В кошику од. на суму грн. | |||||||||||||||
| LC03-6R2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; unidirectional; SO8; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Number of channels: 2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Application: ignition systems Version: ESD Features of semiconductor devices: logic level Gate charge: 36nC |
на замовлення 726 шт: термін постачання 14-30 дні (днів) |
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FGA40T65SHD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO3P Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 72.2nC |
на замовлення 441 шт: термін постачання 14-30 дні (днів) |
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AFGB40T65SQDN | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 76nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AFGB40T65RQDN | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 169.68W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 51nC |
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В кошику од. на суму грн. | |||||||||||||||
| FGHL40T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 86nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FGHL40T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AFGHL40T65SQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 68nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAD6263M1X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: driver; motor controller; SO16; -3.3÷3.3A; 10÷22VDC Operating temperature: -40...125°C Kind of integrated circuit: motor controller Kind of package: reel; tape Mounting: SMD Case: SO16 Output current: -3.3...3.3A Pulse fall time: 100ns Impulse rise time: 100ns Supply voltage: 10...22V DC Type of integrated circuit: driver |
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В кошику од. на суму грн. | |||||||||||||||
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MJE15034G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 4A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 220 шт: термін постачання 14-30 дні (днів) |
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1N4936 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
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В кошику од. на суму грн. | ||||||||||||||
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1N4936RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
на замовлення 4769 шт: термін постачання 14-30 дні (днів) |
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1N4936G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
на замовлення 290 шт: термін постачання 14-30 дні (днів) |
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74LCX07M | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; SO14; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Mounting: SMD Case: SO14 Manufacturer series: LCX Operating temperature: -40...85°C Kind of output: open drain Supply voltage: 2...5.5V DC Kind of package: tube Quiescent current: 10µA |
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В кошику од. на суму грн. | ||||||||||||||
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74LCX07MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Operating temperature: -40...85°C Kind of output: open drain Supply voltage: 2...5.5V DC |
на замовлення 2596 шт: термін постачання 14-30 дні (днів) |
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| NCP81239AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck Type of integrated circuit: PMIC Input voltage: 4.5...32V Output voltage: 5V Output current: 97mA Frequency: 528...1344kHz Mounting: SMD Case: QFN32 Topology: boost; buck Number of channels: 1 Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81239MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck Type of integrated circuit: PMIC Input voltage: 4.5...32V Output voltage: 5V Output current: 97mA Frequency: 528...1344kHz Mounting: SMD Case: QFN32 Topology: boost; buck Number of channels: 1 Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MUN5133T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. Current gain: 80...140 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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SMUN5133T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MOC3010 | ONSEMI |
Category: Optotriacs Description: Optotriac; 7.5kV; Uout: 250V; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 7.5kV Output voltage: 250V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 8mA Mounting: THT Number of channels: 1 |
на замовлення 513 шт: термін постачання 14-30 дні (днів) |
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| FODM2701R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
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од. на суму грн.
| FSQ110 |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 55...65%
Power: 12W
Application: SMPS
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 55...65%
Power: 12W
Application: SMPS
Operating voltage: 8...19V DC
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В кошику
од. на суму грн.
| P6KE160A |
|
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| NC7WZ07P6X-L22347 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
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В кошику
од. на суму грн.
| LC03-6R2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; unidirectional; SO8; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Number of channels: 2
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; unidirectional; SO8; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Number of channels: 2
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FGB40T65SPD-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
на замовлення 726 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.12 грн |
| 5+ | 303.05 грн |
| 10+ | 268.34 грн |
| 25+ | 226.02 грн |
| 100+ | 224.33 грн |
| FGA40T65SHD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
на замовлення 441 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.28 грн |
| 10+ | 174.38 грн |
| 30+ | 146.45 грн |
| AFGB40T65SQDN |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
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В кошику
од. на суму грн.
| AFGB40T65RQDN |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| FGHL40T65MQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
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В кошику
од. на суму грн.
| FGHL40T65MQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
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од. на суму грн.
| AFGHL40T65SQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
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| FAD6263M1X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: driver; motor controller; SO16; -3.3÷3.3A; 10÷22VDC
Operating temperature: -40...125°C
Kind of integrated circuit: motor controller
Kind of package: reel; tape
Mounting: SMD
Case: SO16
Output current: -3.3...3.3A
Pulse fall time: 100ns
Impulse rise time: 100ns
Supply voltage: 10...22V DC
Type of integrated circuit: driver
Category: Buffers, transceivers, drivers
Description: IC: driver; motor controller; SO16; -3.3÷3.3A; 10÷22VDC
Operating temperature: -40...125°C
Kind of integrated circuit: motor controller
Kind of package: reel; tape
Mounting: SMD
Case: SO16
Output current: -3.3...3.3A
Pulse fall time: 100ns
Impulse rise time: 100ns
Supply voltage: 10...22V DC
Type of integrated circuit: driver
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од. на суму грн.
| MJE15034G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 126.72 грн |
| 6+ | 82.96 грн |
| 10+ | 69.41 грн |
| 50+ | 51.64 грн |
| 1N4936 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| 1N4936RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 4769 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.41 грн |
| 50+ | 8.63 грн |
| 57+ | 7.53 грн |
| 100+ | 5.44 грн |
| 500+ | 4.27 грн |
| 1000+ | 3.82 грн |
| 2000+ | 3.40 грн |
| 1N4936G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 290 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 46+ | 9.31 грн |
| 100+ | 6.30 грн |
| 74LCX07M |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; SO14; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...5.5V DC
Kind of package: tube
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; SO14; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...5.5V DC
Kind of package: tube
Quiescent current: 10µA
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| 74LCX07MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...5.5V DC
на замовлення 2596 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.14 грн |
| 29+ | 15.07 грн |
| 31+ | 13.80 грн |
| 35+ | 12.27 грн |
| 100+ | 11.85 грн |
| NCP81239AMNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck
Type of integrated circuit: PMIC
Input voltage: 4.5...32V
Output voltage: 5V
Output current: 97mA
Frequency: 528...1344kHz
Mounting: SMD
Case: QFN32
Topology: boost; buck
Number of channels: 1
Operating temperature: -40...100°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck
Type of integrated circuit: PMIC
Input voltage: 4.5...32V
Output voltage: 5V
Output current: 97mA
Frequency: 528...1344kHz
Mounting: SMD
Case: QFN32
Topology: boost; buck
Number of channels: 1
Operating temperature: -40...100°C
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| NCP81239MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck
Type of integrated circuit: PMIC
Input voltage: 4.5...32V
Output voltage: 5V
Output current: 97mA
Frequency: 528...1344kHz
Mounting: SMD
Case: QFN32
Topology: boost; buck
Number of channels: 1
Operating temperature: -40...100°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷32V; Uout: 5V; QFN32; boost,buck
Type of integrated circuit: PMIC
Input voltage: 4.5...32V
Output voltage: 5V
Output current: 97mA
Frequency: 528...1344kHz
Mounting: SMD
Case: QFN32
Topology: boost; buck
Number of channels: 1
Operating temperature: -40...100°C
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| MUN5133T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...140
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 90+ | 4.74 грн |
| 152+ | 2.79 грн |
| 500+ | 2.14 грн |
| 1000+ | 1.96 грн |
| 3000+ | 1.62 грн |
| SMUN5133T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.94 грн |
| 63+ | 6.77 грн |
| 100+ | 4.35 грн |
| 500+ | 3.27 грн |
| 1000+ | 2.90 грн |
| 3000+ | 2.86 грн |
| MOC3010 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; Uout: 250V; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Output voltage: 250V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 8mA
Mounting: THT
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 7.5kV; Uout: 250V; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Output voltage: 250V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 8mA
Mounting: THT
Number of channels: 1
на замовлення 513 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.81 грн |
| 16+ | 27.09 грн |
| 25+ | 24.13 грн |
| 100+ | 21.33 грн |