| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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SMCJ28CA | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 32.9V Max. forward impulse current: 200A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP382HD10AAR2G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 2 Kind of output: P-Channel Mounting: SMD Case: SO8 On-state resistance: 0.14Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP136AFCT105T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD Type of integrated circuit: voltage regulator Output current: 0.7A Number of channels: 1 Case: WLCSP6 Mounting: SMD Output voltage: 1.05V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.05...5.5V Manufacturer series: NCP136 Voltage drop: 60mV Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L045N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 197A Power dissipation: 94W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 41mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NV24M01MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Kind of package: reel; tape Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24M01WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C Clock frequency: 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24M01YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C Clock frequency: 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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DAP222T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Features of semiconductor devices: ultrafast switching Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC75 Capacitance: 3.5pF Type of diode: rectifying Reverse recovery time: 4ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.2V |
на замовлення 5460 шт: термін постачання 14-30 дні (днів) |
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| NTA4151PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Power dissipation: 0.301W Polarisation: unipolar Drain current: -0.76A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape Case: SC75 On-state resistance: 0.36Ω Mounting: SMD |
на замовлення 5797 шт: термін постачання 14-30 дні (днів) |
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| NVA4001NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75 Pulsed drain current: 0.714A Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.238A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SC75 On-state resistance: 3Ω Mounting: SMD |
на замовлення 2869 шт: термін постачання 14-30 дні (днів) |
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DTA115EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Base resistor: 100kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 80...150 Kind of package: reel; tape Base-emitter resistor: 100kΩ Case: SC75; SOT416 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V |
на замовлення 5985 шт: термін постачання 14-30 дні (днів) |
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| NSVDAP222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape Features of semiconductor devices: small signal Application: automotive industry Max. off-state voltage: 80V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SC75 Type of diode: switching Reverse recovery time: 4ns Mounting: SMD Max. forward voltage: 1.2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SBAW56TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A Power dissipation: 0.36W Application: automotive industry Max. off-state voltage: 70V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50µA Case: SC75 Capacitance: 2pF Type of diode: switching Reverse recovery time: 6ns Mounting: SMD Max. forward impulse current: 0.5A Max. forward voltage: 1.25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S2SA1774G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416 Power dissipation: 0.15W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Current gain: 120...560 Kind of package: reel; tape Case: SC75; SOT416 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTHL023N065M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W Case: TO247-3 Mounting: THT Pulsed drain current: 218A Power dissipation: 131W Gate charge: 69nC Polarisation: unipolar Technology: SiC Drain current: 49A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -8...22V Kind of package: tube On-state resistance: 37mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LP2951CDMR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...29V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM319N | ONSEMI |
Category: THT comparatorsDescription: IC: comparator; universal; Cmp: 2; 5÷30V; THT; DIP14; tube; 300nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 5...30V Mounting: THT Case: DIP14 Kind of output: open collector Input offset voltage: 10mV Operating temperature: 0...70°C Kind of package: tube Input offset current: 300nA |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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4N35VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74LVXT8051DR2G | ONSEMI |
Category: Integrated circuits - UnclassifiedDescription: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74LVXT8051DTRG | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS Mounting: SMD Supply voltage: 2...6V DC Type of integrated circuit: analog switch Operating temperature: -55...125°C Technology: CMOS Quiescent current: 160µA Kind of package: reel; tape Case: TSSOP16 Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDC6561AN | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 152mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3.2nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ESD7004MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; quadruple Case: uDFN10 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 5.5V Application: HDMI; USB Max. off-state voltage: 5V |
на замовлення 765 шт: термін постачання 14-30 дні (днів) |
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| NST3946DP6T5G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.42W Case: SOT963 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NST3946DXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.5W Case: SOT563 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSVT3946DXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.5W Case: SOT563 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ESD7104MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4 Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: common anode; quadruple Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Number of channels: 4 Application: HDMI; USB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD7104MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 5; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: bidirectional Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Number of channels: 5 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSVBAS21HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. load current: 0.5A Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP1247BD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1247DD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV33275ST3.3T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SOT223 Mounting: SMD Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBF2201NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.15W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 750A Gate charge: 1.4nC |
на замовлення 2800 шт: термін постачання 14-30 дні (днів) |
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FDP2710 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31.3A; 260W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 250V Drain current: 31.3A Power dissipation: 260W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 36.3mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14053BDG | ONSEMI |
Category: Integrated circuits - UnclassifiedDescription: IC: digital; SMD Type of integrated circuit: digital Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 48 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14053BDTR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 3; TSSOP16 Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 3 Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 3...18V Quiescent current: 600µA Output configuration: SPDT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FODM611R2 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: Mini-flat 4pin Slew rate: 40kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FODM611 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 10Mbps; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: Mini-flat 5pin Slew rate: 40kV/μs Transfer rate: 10Mbps Max. off-state voltage: 5V Turn-on time: 20ns Output voltage: -500mV...7.5V Turn-off time: 10ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT574DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: ACT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MJB41CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: D2PAK Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Current gain: 15...75 |
на замовлення 795 шт: термін постачання 14-30 дні (днів) |
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MOC3062SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; Gull wing 6; Ch: 1; MOC3062M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Manufacturer series: MOC3062M Slew rate: 0.6kV/μs Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMMUN2232LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 15...30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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SZMM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
на замовлення 5990 шт: термін постачання 14-30 дні (днів) |
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| NGTB50N65FL2WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 208W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 208W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Gate charge: 0.22µC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ5231ELT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; single diode; reel,tape Mounting: SMD Tolerance: ±5% Manufacturer series: MMBZ52xxELT1G Power dissipation: 0.3W Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Zener voltage: 5.1V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ESDR0524PMUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; unidirectional; uDFN10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: unidirectional Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Number of channels: 4 Application: HDMI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS6H836NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 77A Power dissipation: 45W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 449A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS6H836NLWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 77A Power dissipation: 45W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 449A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MUR410G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; bulk; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: bulk Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUR410RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: reel; tape Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SBR80520LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.385V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 8990 шт: термін постачання 14-30 дні (днів) |
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SBR80520LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.385V Max. forward impulse current: 5.5A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
NC7SZ27P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 3; CMOS; SMD; SC70-6; 1.65÷5.5VDC; 20uA Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 3 Mounting: SMD Case: SC70-6 Technology: CMOS Quiescent current: 20µA Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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NC7SP57P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Mounting: SMD Case: SC88 Family: NC Technology: CMOS Kind of package: reel; tape Supply voltage: 0.9...3.6V DC Manufacturer series: TinyLogic Operating temperature: -40...85°C |
на замовлення 2803 шт: термін постачання 14-30 дні (днів) |
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| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
74VHCT08AMX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: VHCT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHCT08ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHCT08ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHCT |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
|
KSA1298YMTF | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 25V Power dissipation: 0.2W Polarisation: bipolar Type of transistor: PNP Current gain: 100...320 Kind of package: reel; tape Frequency: 120MHz Collector current: 0.8A |
на замовлення 387 шт: термін постачання 14-30 дні (днів) |
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| SMCJ28CA |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.9V
Max. forward impulse current: 200A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.9V
Max. forward impulse current: 200A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NCP382HD10AAR2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| NCP136AFCT105T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Output current: 0.7A
Number of channels: 1
Case: WLCSP6
Mounting: SMD
Output voltage: 1.05V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.05...5.5V
Manufacturer series: NCP136
Voltage drop: 60mV
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Output current: 0.7A
Number of channels: 1
Case: WLCSP6
Mounting: SMD
Output voltage: 1.05V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.05...5.5V
Manufacturer series: NCP136
Voltage drop: 60mV
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| NTH4L045N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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В кошику
од. на суму грн.
| NV24M01MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24M01WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24M01YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DAP222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
на замовлення 5460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.99 грн |
| 68+ | 6.17 грн |
| 79+ | 5.34 грн |
| 93+ | 4.51 грн |
| 115+ | 3.64 грн |
| 133+ | 3.15 грн |
| 500+ | 2.30 грн |
| 1000+ | 2.12 грн |
| 3000+ | 1.92 грн |
| NTA4151PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Power dissipation: 0.301W
Polarisation: unipolar
Drain current: -0.76A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.36Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Power dissipation: 0.301W
Polarisation: unipolar
Drain current: -0.76A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.36Ω
Mounting: SMD
на замовлення 5797 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.16 грн |
| 34+ | 12.52 грн |
| 50+ | 8.74 грн |
| 100+ | 7.49 грн |
| 500+ | 5.26 грн |
| 600+ | 5.06 грн |
| 1000+ | 4.52 грн |
| 1500+ | 4.17 грн |
| NVA4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
на замовлення 2869 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.46 грн |
| 35+ | 12.10 грн |
| 50+ | 11.35 грн |
| 100+ | 10.93 грн |
| 500+ | 6.68 грн |
| DTA115EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Base resistor: 100kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 100kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Base resistor: 100kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 100kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
на замовлення 5985 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.68 грн |
| 46+ | 9.18 грн |
| 53+ | 7.93 грн |
| 100+ | 4.22 грн |
| 500+ | 2.84 грн |
| 1000+ | 2.46 грн |
| 3000+ | 2.05 грн |
| NSVDAP222T1G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.2V
товару немає в наявності
В кошику
од. на суму грн.
| SBAW56TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Application: automotive industry
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50µA
Case: SC75
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 6ns
Mounting: SMD
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Application: automotive industry
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50µA
Case: SC75
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 6ns
Mounting: SMD
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
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| S2SA1774G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Power dissipation: 0.15W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 120...560
Kind of package: reel; tape
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Power dissipation: 0.15W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 120...560
Kind of package: reel; tape
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
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| NTHL023N065M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Case: TO247-3
Mounting: THT
Pulsed drain current: 218A
Power dissipation: 131W
Gate charge: 69nC
Polarisation: unipolar
Technology: SiC
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -8...22V
Kind of package: tube
On-state resistance: 37mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 49A; Idm: 218A; 131W
Case: TO247-3
Mounting: THT
Pulsed drain current: 218A
Power dissipation: 131W
Gate charge: 69nC
Polarisation: unipolar
Technology: SiC
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -8...22V
Kind of package: tube
On-state resistance: 37mΩ
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| LP2951CDMR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM319N |
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Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 5÷30V; THT; DIP14; tube; 300nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 5...30V
Mounting: THT
Case: DIP14
Kind of output: open collector
Input offset voltage: 10mV
Operating temperature: 0...70°C
Kind of package: tube
Input offset current: 300nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 5÷30V; THT; DIP14; tube; 300nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 5...30V
Mounting: THT
Case: DIP14
Kind of output: open collector
Input offset voltage: 10mV
Operating temperature: 0...70°C
Kind of package: tube
Input offset current: 300nA
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Мінімальне замовлення: 3 шт
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| 4N35VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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Мінімальне замовлення: 1000 шт
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| MC74LVXT8051DR2G |
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Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 2500 шт
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| MC74LVXT8051DTRG |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Type of integrated circuit: analog switch
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 160µA
Kind of package: reel; tape
Case: TSSOP16
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Type of integrated circuit: analog switch
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 160µA
Kind of package: reel; tape
Case: TSSOP16
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
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Мінімальне замовлення: 2500 шт
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| FDC6561AN |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.2nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.2nC
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| ESD7004MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
Case: uDFN10
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 5.5V
Application: HDMI; USB
Max. off-state voltage: 5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
Case: uDFN10
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 5.5V
Application: HDMI; USB
Max. off-state voltage: 5V
на замовлення 765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.64 грн |
| 15+ | 28.37 грн |
| 18+ | 24.45 грн |
| 50+ | 17.19 грн |
| 94+ | 10.26 грн |
| 257+ | 9.68 грн |
| NST3946DP6T5G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| NST3946DXV6T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.5W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.5W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| NSVT3946DXV6T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.5W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.5W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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| ESD7104MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Application: HDMI; USB
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Application: HDMI; USB
Kind of package: reel; tape
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| SZESD7104MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 5
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 5
Application: automotive industry
Kind of package: reel; tape
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| NSVBAS21HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| NCP1247BD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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Мінімальне замовлення: 2500 шт
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| NCP1247DD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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Мінімальне замовлення: 2500 шт
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| NCV33275ST3.3T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| MMBF2201NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 750A
Gate charge: 1.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 750A
Gate charge: 1.4nC
на замовлення 2800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.15 грн |
| 21+ | 20.78 грн |
| 50+ | 14.69 грн |
| 100+ | 12.68 грн |
| 500+ | 9.35 грн |
| 1000+ | 8.26 грн |
| 1500+ | 7.68 грн |
| FDP2710 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31.3A; 260W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31.3A
Power dissipation: 260W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31.3A; 260W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31.3A
Power dissipation: 260W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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| MC14053BDG |
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Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital; SMD
Type of integrated circuit: digital
Mounting: SMD
Category: Integrated circuits - Unclassified
Description: IC: digital; SMD
Type of integrated circuit: digital
Mounting: SMD
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Мінімальне замовлення: 48 шт
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| MC14053BDTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 3; TSSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V
Quiescent current: 600µA
Output configuration: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT; Ch: 3; TSSOP16
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V
Quiescent current: 600µA
Output configuration: SPDT
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| FODM611R2 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
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| FODM611 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 10Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: Mini-flat 5pin
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Max. off-state voltage: 5V
Turn-on time: 20ns
Output voltage: -500mV...7.5V
Turn-off time: 10ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 10Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: Mini-flat 5pin
Slew rate: 40kV/μs
Transfer rate: 10Mbps
Max. off-state voltage: 5V
Turn-on time: 20ns
Output voltage: -500mV...7.5V
Turn-off time: 10ns
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Мінімальне замовлення: 3000 шт
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| MC74ACT574DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
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Мінімальне замовлення: 2500 шт
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| MJB41CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Current gain: 15...75
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Current gain: 15...75
на замовлення 795 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 134.79 грн |
| 10+ | 80.94 грн |
| 100+ | 55.07 грн |
| 200+ | 48.40 грн |
| MOC3062SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; Gull wing 6; Ch: 1; MOC3062M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; Gull wing 6; Ch: 1; MOC3062M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
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Мінімальне замовлення: 1000 шт
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| NSVMMUN2232LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 15...30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 15...30
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| MM3Z18VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 76 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.09 грн |
| 68+ | 6.17 грн |
| 76+ | 5.84 грн |
| SZMM3Z18VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 5990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 112+ | 4.03 грн |
| 167+ | 2.50 грн |
| 211+ | 1.99 грн |
| 227+ | 1.84 грн |
| 500+ | 1.61 грн |
| 817+ | 1.17 грн |
| 2246+ | 1.11 грн |
| NGTB50N65FL2WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Gate charge: 0.22µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Gate charge: 0.22µC
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| MMBZ5231ELT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMBZ52xxELT1G
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMBZ52xxELT1G
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
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| ESDR0524PMUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Application: HDMI
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Application: HDMI
Kind of package: reel; tape
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| NVMFS6H836NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Power dissipation: 45W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 449A
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Power dissipation: 45W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 449A
Gate charge: 34nC
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| NVMFS6H836NLWFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Power dissipation: 45W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 449A
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Power dissipation: 45W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 449A
Gate charge: 34nC
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| MUR410G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: bulk
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: bulk
Reverse recovery time: 35ns
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| MUR410RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 4A; Ifsm: 125A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: reel; tape
Reverse recovery time: 35ns
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| SBR80520LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 8990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.46 грн |
| 25+ | 16.86 грн |
| 29+ | 14.44 грн |
| 100+ | 12.02 грн |
| SBR80520LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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| NC7SZ27P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 3; CMOS; SMD; SC70-6; 1.65÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Technology: CMOS
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 3; CMOS; SMD; SC70-6; 1.65÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Technology: CMOS
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.19 грн |
| 76+ | 5.51 грн |
| NC7SP57P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: SC88
Family: NC
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: SC88
Family: NC
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
на замовлення 2803 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.96 грн |
| 19+ | 22.28 грн |
| 22+ | 19.86 грн |
| 25+ | 18.02 грн |
| 50+ | 15.19 грн |
| 100+ | 12.35 грн |
| 250+ | 10.10 грн |
| 500+ | 8.84 грн |
| 1000+ | 6.84 грн |
| LMV324DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| LMV324DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| 74VHCT08AMX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
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Мінімальне замовлення: 3 шт
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| MC74VHCT08ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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| MC74VHCT08ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
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Мінімальне замовлення: 7500 шт
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| KSA1298YMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 25V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 100...320
Kind of package: reel; tape
Frequency: 120MHz
Collector current: 0.8A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 25V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 100...320
Kind of package: reel; tape
Frequency: 120MHz
Collector current: 0.8A
на замовлення 387 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.28 грн |
| 51+ | 8.26 грн |
| 100+ | 5.22 грн |
| 200+ | 4.56 грн |





























