Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NLV14024BDR2G | ONSEMI |
![]() Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA Mounting: SMD Operating temperature: -55...125°C Case: SO14 Supply voltage: 3...18V DC Type of integrated circuit: digital Quiescent current: 600µA Application: automotive industry Kind of package: reel; tape Technology: TTL Kind of integrated circuit: asynchronous counter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NSQA6V8AW5T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SZNSQA6V8AW5T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NC7S04M5X | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Number of inputs: 1 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NC7S04P5X | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PCRU3060W | ONSEMI |
Category: Transistors - Unclassified Description: PCRU3060W |
на замовлення 24079 шт: термін постачання 21-30 дні (днів) |
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FODM8071 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Transfer rate: 20Mbps Case: Mini-flat 5pin Turn-on time: 5.8ns Turn-off time: 5.3µs Slew rate: 40kV/μs |
на замовлення 1445 шт: термін постачання 21-30 дні (днів) |
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NCP51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCV51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCV51400MWTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S215FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74VHC4052DR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHC4052DTR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC33179DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Kind of package: reel; tape |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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SS33 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W Mounting: SMD Max. forward voltage: 0.5V Max. off-state voltage: 30V Case: SMC Kind of package: reel; tape Type of diode: Schottky rectifying Power dissipation: 2.27W Max. forward impulse current: 100A Semiconductor structure: single diode Load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ESD7461N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD Version: ESD Capacitance: 0.3pF Max. off-state voltage: 16V Semiconductor structure: bidirectional Breakdown voltage: 16.5V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.3W Mounting: SMD Case: XDFN2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMMSD301T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMDL770T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Semiconductor structure: single diode Capacitance: 1pF Max. forward voltage: 1V Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
HCPL4503SDM | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
на замовлення 26000 шт: термін постачання 21-30 дні (днів) |
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NTD20P06LT4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2484 шт: термін постачання 21-30 дні (днів) |
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BSS138K | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.4nC |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BSS138 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
на замовлення 5890 шт: термін постачання 21-30 дні (днів) |
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RGF1K | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
GF1K | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCP55 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NSVRB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBR30H100MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5x6 Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBR30H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AB Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.8V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVB30H100MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5 Max. off-state voltage: 100V Max. load current: 60A Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVB30H100MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5 Max. off-state voltage: 100V Max. load current: 60A Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SK3557-6-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SK3557-7-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Case: SOT23 Tolerance: ±5% Max. off-state voltage: 4.5V Semiconductor structure: common anode; double Max. forward impulse current: 2.5A Breakdown voltage: 6.8V Leakage current: 0.5µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 24W Mounting: SMD |
на замовлення 5376 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ6V8ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5% Type of diode: TVS array Case: SOT23 Tolerance: ±5% Max. off-state voltage: 4.5V Semiconductor structure: common anode; double Max. forward impulse current: 2.5A Breakdown voltage: 6.8V Application: automotive industry Kind of package: reel; tape Peak pulse power dissipation: 25W Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SZMMBZ6V8ALT3G | ONSEMI |
![]() Description: Diode: TVS array Type of diode: TVS array |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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MMBZ5V6ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 5.6V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Kind of package: reel; tape Tolerance: ±5% Version: ESD Leakage current: 5µA |
на замовлення 3049 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ5V6ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 5.6V Max. forward impulse current: 3A Peak pulse power dissipation: 25W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS7672 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 90A Power dissipation: 48W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS004N08C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 637A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS015N04B | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS0300S | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 180A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS0306AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS039N08B | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS2D5N08C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 105A Pulsed drain current: 823A Power dissipation: 138W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS3662 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 90A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS7656AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 180A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BU407 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220 Case: TO220 Mounting: THT Power: 60W Collector-emitter voltage: 330V Collector current: 7A Type of transistor: NPN Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BVSS84LT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -50V Drain current: -130mA On-state resistance: 10Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 3152 шт: термін постачання 21-30 дні (днів) |
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NVMTS0D4N04CTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 108000 шт: термін постачання 21-30 дні (днів) |
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FODM217A | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 80-160%@5mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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FODM217D | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
на замовлення 793 шт: термін постачання 21-30 дні (днів) |
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FODM217B | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 130-260%@5mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
на замовлення 1904 шт: термін постачання 21-30 дні (днів) |
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FODM217C | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 200-400%@5mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
на замовлення 1327 шт: термін постачання 21-30 дні (днів) |
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FODM217DR2V | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FODM217AR2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 80-160%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FODM217BR2V | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 130-260%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FODM217DR2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FODM217DV | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSV52LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Frequency: 400MHz Collector-emitter voltage: 12V Current gain: 40...120 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.225W Polarisation: bipolar |
на замовлення 169 шт: термін постачання 21-30 дні (днів) |
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NLV14024BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
товару немає в наявності
В кошику
од. на суму грн.
NSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
SZNSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
NC7S04M5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.47 грн |
46+ | 8.33 грн |
63+ | 6.12 грн |
100+ | 5.33 грн |
203+ | 4.45 грн |
500+ | 4.01 грн |
NC7S04P5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
товару немає в наявності
В кошику
од. на суму грн.
PCRU3060W |
на замовлення 24079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 190.18 грн |
FODM8071 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 269.22 грн |
5+ | 177.36 грн |
8+ | 128.43 грн |
20+ | 121.55 грн |
200+ | 120.02 грн |
500+ | 116.20 грн |
NCP51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
товару немає в наявності
В кошику
од. на суму грн.
NCV51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
товару немає в наявності
В кошику
од. на суму грн.
NCV51400MWTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
товару немає в наявності
В кошику
од. на суму грн.
S215FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
MC74VHC4052DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
MC74VHC4052DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
MC33179DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
на замовлення 201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 99.62 грн |
10+ | 47.17 грн |
23+ | 39.52 грн |
50+ | 38.22 грн |
63+ | 37.38 грн |
100+ | 35.93 грн |
SS33 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
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В кошику
од. на суму грн.
ESD7461N2T5G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
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од. на суму грн.
SMMSD301T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
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од. на суму грн.
MMDL770T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
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HCPL4503SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 40.59 грн |
NTD20P06LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2484 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.68 грн |
10+ | 61.08 грн |
30+ | 31.04 грн |
80+ | 29.36 грн |
250+ | 29.28 грн |
BSS138K |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
72+ | 5.35 грн |
120+ | 3.20 грн |
250+ | 2.91 грн |
409+ | 2.21 грн |
1124+ | 2.09 грн |
BSS138 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
на замовлення 5890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
72+ | 5.76 грн |
107+ | 3.59 грн |
182+ | 2.10 грн |
250+ | 1.89 грн |
500+ | 1.81 грн |
612+ | 1.48 грн |
1684+ | 1.39 грн |
RGF1K |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GF1K |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BCP55 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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RB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MBR30H100MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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MBR30H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
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NRVB30H100MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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NRVB30H100MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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2SK3557-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Leakage current: 0.5µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Leakage current: 0.5µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
на замовлення 5376 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
72+ | 5.35 грн |
133+ | 2.87 грн |
500+ | 1.97 грн |
532+ | 1.68 грн |
1463+ | 1.59 грн |
3000+ | 1.53 грн |
SZMMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 25W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 25W
Mounting: SMD
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SZMMBZ6V8ALT3G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.16 грн |
MMBZ5V6ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
на замовлення 3049 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
65+ | 5.96 грн |
86+ | 4.45 грн |
100+ | 3.93 грн |
463+ | 1.94 грн |
1273+ | 1.83 грн |
SZMMBZ5V6ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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FDMS7672 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS004N08C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS015N04B |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0300S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0306AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS039N08B |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS2D5N08C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3662 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7656AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
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BU407 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Mounting: THT
Power: 60W
Collector-emitter voltage: 330V
Collector current: 7A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Mounting: THT
Power: 60W
Collector-emitter voltage: 330V
Collector current: 7A
Type of transistor: NPN
Polarisation: bipolar
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BVSS84LT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 3152 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.76 грн |
32+ | 12.23 грн |
50+ | 10.40 грн |
100+ | 8.18 грн |
152+ | 5.89 грн |
419+ | 5.58 грн |
3000+ | 5.35 грн |
NVMTS0D4N04CTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 108000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 575.48 грн |
FODM217A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
на замовлення 848 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.16 грн |
15+ | 25.53 грн |
50+ | 19.57 грн |
52+ | 17.43 грн |
100+ | 17.05 грн |
141+ | 16.51 грн |
500+ | 16.05 грн |
FODM217D |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
на замовлення 793 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.75 грн |
14+ | 27.98 грн |
50+ | 21.18 грн |
55+ | 16.36 грн |
151+ | 15.44 грн |
FODM217B |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
на замовлення 1904 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
14+ | 27.52 грн |
45+ | 20.18 грн |
100+ | 19.42 грн |
122+ | 19.04 грн |
500+ | 18.35 грн |
FODM217C |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
на замовлення 1327 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.87 грн |
14+ | 28.90 грн |
25+ | 23.24 грн |
50+ | 19.72 грн |
58+ | 15.52 грн |
158+ | 14.75 грн |
500+ | 14.60 грн |
FODM217DR2V |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
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FODM217AR2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
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FODM217BR2V |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
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FODM217DR2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
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FODM217DV |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
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BSV52LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 40...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 40...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
на замовлення 169 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
33+ | 11.70 грн |
100+ | 7.30 грн |