Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDP3632 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Mounting: THT Drain-source voltage: 100V Drain current: 12A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: tube Gate charge: 110nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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CNY172M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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CNY171M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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CNY174M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 359 шт: термін постачання 21-30 дні (днів) |
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CNY17F1VM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 819 шт: термін постачання 21-30 дні (днів) |
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CNY17F4TVM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 249 шт: термін постачання 21-30 дні (днів) |
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CNY172VM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 563 шт: термін постачання 21-30 дні (днів) |
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CNY174VM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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CNY171SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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CNY174SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Case: Gull wing 6 Mounting: SMD Turn-on time: 2µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Manufacturer series: CNY17 Type of optocoupler: optocoupler CTR@If: 160-320%@10mA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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CNY17F1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 391 шт: термін постачання 21-30 дні (днів) |
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CNY172SVM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 382 шт: термін постачання 21-30 дні (днів) |
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CNY17F2SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Case: Gull wing 6 Mounting: SMD Turn-on time: 2µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Manufacturer series: CNY17 Type of optocoupler: optocoupler CTR@If: 63-125%@10mA |
на замовлення 251 шт: термін постачання 21-30 дні (днів) |
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CNY174SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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CNY17F4SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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CNY17F2M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Manufacturer series: CNY17 Max. off-state voltage: 6V |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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NCP361MUTBG | ONSEMI |
![]() Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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NUP1105LT1G | ONSEMI |
![]() Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode Type of diode: TVS array Case: SOT23 Max. off-state voltage: 24V Semiconductor structure: common cathode; double Max. forward impulse current: 8A Breakdown voltage: 25.7...28.4V Leakage current: 0.1µA Application: CAN Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.35kW Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NUP3105LT1G | ONSEMI |
![]() Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape Mounting: SMD Breakdown voltage: 35.6V Kind of package: reel; tape Type of diode: TVS Case: SOT23 Max. off-state voltage: 32V Semiconductor structure: bidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD5B5.0ST1G | ONSEMI |
![]() ![]() Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Peak pulse power dissipation: 0.2W Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Version: ESD Leakage current: 1µA |
на замовлення 2479 шт: термін постачання 21-30 дні (днів) |
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NCP718BSN250T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 300mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.49V Output voltage: 2.5V Output current: 0.3A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP718 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LCX540MTC | ONSEMI |
![]() ![]() Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LCX Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 8 Quiescent current: 10µA Kind of output: 3-state Kind of package: tube Manufacturer series: LCX Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Operating temperature: -40...85°C Case: TSSOP20 |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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74LCX125MTC | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Quiescent current: 10µA Kind of output: 3-state Manufacturer series: LCX Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Case: TSSOP14 |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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MJW18020G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 30A Power dissipation: 250W Case: TO247-3 Current gain: 14...34 Mounting: THT Kind of package: tube Frequency: 13MHz |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MC14106BDR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Family: HEF4000B |
на замовлення 1480 шт: термін постачання 21-30 дні (днів) |
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MC14106BDG | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Kind of input: with Schmitt trigger Delay time: 100ns Family: HEF4000B |
на замовлення 182 шт: термін постачання 21-30 дні (днів) |
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MC14106BDTR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Family: HEF4000B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU4K | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LCX125BQX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC Operating temperature: -40...85°C Case: QFN14 Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Manufacturer series: LCX Kind of integrated circuit: buffer; non-inverting Mounting: SMD |
на замовлення 1212 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCLW1T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 12A Version: ESD |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 12A Version: ESD |
на замовлення 542 шт: термін постачання 21-30 дні (днів) |
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MOC3163M | ONSEMI |
![]() Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: zero voltage crossing driver Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC3163M Slew rate: 1kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MOC3163SM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3163M Slew rate: 1kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
GBPC1206W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
GBPC1206 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 12A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP160AMX514TBG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: XDFN4 Tolerance: ±2% Output voltage: 5.14V Output current: 0.25A Voltage drop: 0.105V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP160 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP160BMX514TBG | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: XDFN4 Tolerance: ±2% Output voltage: 5.14V Output current: 0.25A Voltage drop: 0.105V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP160 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP161BMX514TBG | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; XDFN4; SMD Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: XDFN4 Tolerance: ±2% Output voltage: 5.14V Output current: 0.45A Voltage drop: 0.185V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP161 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDC6327C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of package: reel; tape Power dissipation: 0.96W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 20/-20V Drain current: 2.7/-1.9A On-state resistance: 0.13/0.27Ω Type of transistor: N/P-MOSFET |
на замовлення 1757 шт: термін постачання 21-30 дні (днів) |
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FDC6312P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -2.3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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FDC6333C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Power dissipation: 0.96W Polarisation: unipolar Gate charge: 6.6/5.7nC Technology: PowerTrench® Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±16/±25V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 30/-30V Drain current: 2.5/-2A On-state resistance: 150/220mΩ Type of transistor: N/P-MOSFET |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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FDC638P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 14nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 72mΩ Type of transistor: P-MOSFET |
на замовлення 1334 шт: термін постачання 21-30 дні (днів) |
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FDC637AN | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 16nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 20V Drain current: 6.2A On-state resistance: 41mΩ Type of transistor: N-MOSFET |
на замовлення 2268 шт: термін постачання 21-30 дні (днів) |
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FDC638APZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 12nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 72mΩ Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6323L | ONSEMI |
![]() Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 1.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...8V DC Output current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC637BNZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 12nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 20V Drain current: 6.2A On-state resistance: 41mΩ Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6303N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Kind of package: reel; tape Gate charge: 2.3nC Technology: PowerTrench® Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±8V Polarisation: unipolar On-state resistance: 0.8Ω Type of transistor: N-MOSFET x2 Drain-source voltage: 25V Power dissipation: 0.9W Drain current: 0.68A Case: SuperSOT-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC634P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 0.13Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6329L | ONSEMI |
![]() Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 1.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 2.5...8V DC On-state resistance: 0.105Ω Output current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDC6326L | ONSEMI |
![]() Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 2.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...20V DC On-state resistance: 0.125Ω Output current: 1.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDC6320C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A On-state resistance: 9/10Ω Type of transistor: N/P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC74VHC1GT14DFT1G | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 84000 шт: термін постачання 21-30 дні (днів) |
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M74VHC1GT14DFT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Operating temperature: -55...125°C Case: SC88A Number of inputs: 1 Supply voltage: 2...5.5V DC Mounting: SMD Number of channels: single; 1 Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOT Technology: TTL Family: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FFSP2065B | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 22.5A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065A | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 25A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065BDN-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRB20H100CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 0.73V Max. load current: 10A Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRB20200CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 1V Max. load current: 20A Max. forward impulse current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP51199PDR2G | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.75...2.5V Output current: 2A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: max. 125°C Application: for DDR memories Operating voltage: 1.5...5.5/4.75...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. |
FDP3632 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 297.18 грн |
6+ | 162.78 грн |
16+ | 154.25 грн |
50+ | 151.93 грн |
CNY172M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 463 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
20+ | 20.00 грн |
25+ | 16.28 грн |
96+ | 9.53 грн |
264+ | 8.99 грн |
CNY171M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.75 грн |
18+ | 22.63 грн |
26+ | 15.04 грн |
72+ | 12.87 грн |
100+ | 12.40 грн |
CNY174M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 359 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.09 грн |
13+ | 32.17 грн |
25+ | 24.80 грн |
50+ | 19.22 грн |
58+ | 15.81 грн |
100+ | 14.34 грн |
CNY17F1VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
30+ | 13.02 грн |
36+ | 10.77 грн |
96+ | 9.53 грн |
100+ | 9.46 грн |
264+ | 8.99 грн |
500+ | 8.76 грн |
CNY17F4TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 249 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
26+ | 15.35 грн |
31+ | 12.63 грн |
82+ | 11.24 грн |
100+ | 11.08 грн |
224+ | 10.62 грн |
CNY172VM |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 563 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.09 грн |
12+ | 33.80 грн |
35+ | 26.43 грн |
50+ | 24.57 грн |
100+ | 24.03 грн |
CNY174VM |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
30+ | 13.18 грн |
36+ | 10.85 грн |
95+ | 9.69 грн |
100+ | 9.53 грн |
CNY171SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 298 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
29+ | 13.49 грн |
35+ | 11.16 грн |
92+ | 9.92 грн |
100+ | 9.77 грн |
253+ | 9.38 грн |
CNY174SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
CTR@If: 160-320%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
CTR@If: 160-320%@10mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.58 грн |
12+ | 32.63 грн |
50+ | 24.34 грн |
62+ | 14.88 грн |
170+ | 14.03 грн |
1000+ | 13.57 грн |
CNY17F1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 391 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
25+ | 15.97 грн |
30+ | 13.33 грн |
94+ | 9.84 грн |
256+ | 9.30 грн |
CNY172SVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 382 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.06 грн |
26+ | 15.04 грн |
32+ | 12.40 грн |
100+ | 10.31 грн |
101+ | 9.15 грн |
276+ | 8.60 грн |
CNY17F2SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
CTR@If: 63-125%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
CTR@If: 63-125%@10mA
на замовлення 251 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.08 грн |
14+ | 27.83 грн |
50+ | 22.71 грн |
66+ | 13.88 грн |
182+ | 13.10 грн |
CNY174SR2M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 121 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.94 грн |
12+ | 33.80 грн |
25+ | 29.69 грн |
50+ | 26.82 грн |
54+ | 17.05 грн |
CNY17F4SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.35 грн |
CNY17F2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
на замовлення 993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.24 грн |
15+ | 26.82 грн |
50+ | 21.39 грн |
57+ | 16.12 грн |
157+ | 15.19 грн |
NCP361MUTBG |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 44.65 грн |
23+ | 41.08 грн |
62+ | 38.83 грн |
100+ | 38.21 грн |
500+ | 37.28 грн |
NUP1105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 24V
Semiconductor structure: common cathode; double
Max. forward impulse current: 8A
Breakdown voltage: 25.7...28.4V
Leakage current: 0.1µA
Application: CAN
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 24V
Semiconductor structure: common cathode; double
Max. forward impulse current: 8A
Breakdown voltage: 25.7...28.4V
Leakage current: 0.1µA
Application: CAN
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
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NUP3105LT1G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Mounting: SMD
Breakdown voltage: 35.6V
Kind of package: reel; tape
Type of diode: TVS
Case: SOT23
Max. off-state voltage: 32V
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Mounting: SMD
Breakdown voltage: 35.6V
Kind of package: reel; tape
Type of diode: TVS
Case: SOT23
Max. off-state voltage: 32V
Semiconductor structure: bidirectional
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ESD5B5.0ST1G | ![]() |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.2W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.2W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
42+ | 9.30 грн |
100+ | 5.60 грн |
325+ | 2.78 грн |
894+ | 2.63 грн |
NCP718BSN250T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 300mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.49V
Output voltage: 2.5V
Output current: 0.3A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP718
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 300mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.49V
Output voltage: 2.5V
Output current: 0.3A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP718
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
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74LCX540MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LCX
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LCX
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; TSSOP20; LCX
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LCX
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
на замовлення 125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.20 грн |
10+ | 64.18 грн |
25+ | 51.08 грн |
35+ | 26.35 грн |
96+ | 24.88 грн |
74LCX125MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Kind of output: 3-state
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
на замовлення 294 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
17+ | 23.80 грн |
50+ | 20.46 грн |
57+ | 16.05 грн |
157+ | 15.19 грн |
MJW18020G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 30A
Power dissipation: 250W
Case: TO247-3
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 30A
Power dissipation: 250W
Case: TO247-3
Current gain: 14...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 594.36 грн |
MC14106BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
на замовлення 1480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.13 грн |
10+ | 42.71 грн |
25+ | 34.88 грн |
52+ | 17.75 грн |
143+ | 16.74 грн |
MC14106BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
на замовлення 182 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.82 грн |
10+ | 44.88 грн |
25+ | 37.67 грн |
37+ | 25.04 грн |
101+ | 23.72 грн |
MC14106BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
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GBU4K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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74LCX125BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
на замовлення 1212 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.43 грн |
12+ | 33.41 грн |
25+ | 27.60 грн |
36+ | 25.66 грн |
50+ | 23.95 грн |
100+ | 23.25 грн |
NUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.05 грн |
22+ | 17.83 грн |
50+ | 13.64 грн |
100+ | 12.17 грн |
113+ | 7.98 грн |
NUP4114UCW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 12A
Version: ESD
на замовлення 542 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.39 грн |
20+ | 19.38 грн |
50+ | 14.73 грн |
100+ | 13.10 грн |
106+ | 8.53 грн |
292+ | 8.06 грн |
MOC3163M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
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MOC3163SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
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GBPC1206W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC1206 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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NCP160AMX514TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.25A
Voltage drop: 0.105V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.25A
Voltage drop: 0.105V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
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NCP160BMX514TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.25A
Voltage drop: 0.105V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.25A
Voltage drop: 0.105V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
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NCP161BMX514TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.45A
Voltage drop: 0.185V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP161
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; XDFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN4
Tolerance: ±2%
Output voltage: 5.14V
Output current: 0.45A
Voltage drop: 0.185V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP161
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FDC6327C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
On-state resistance: 0.13/0.27Ω
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
On-state resistance: 0.13/0.27Ω
Type of transistor: N/P-MOSFET
на замовлення 1757 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.96 грн |
10+ | 42.48 грн |
50+ | 33.80 грн |
59+ | 15.58 грн |
162+ | 14.73 грн |
FDC6312P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
10+ | 40.93 грн |
48+ | 19.07 грн |
FDC6333C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±16/±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±16/±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.26 грн |
12+ | 34.88 грн |
50+ | 27.36 грн |
59+ | 15.43 грн |
163+ | 14.65 грн |
FDC638P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 14nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 14nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
17+ | 23.10 грн |
50+ | 20.54 грн |
52+ | 17.83 грн |
141+ | 16.90 грн |
500+ | 16.82 грн |
1000+ | 16.20 грн |
FDC637AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 16nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 16nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
на замовлення 2268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.96 грн |
10+ | 42.63 грн |
33+ | 28.45 грн |
89+ | 26.90 грн |
500+ | 26.12 грн |
FDC638APZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
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FDC6323L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Output current: 1.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Output current: 1.5A
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FDC637BNZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
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FDC6303N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Kind of package: reel; tape
Gate charge: 2.3nC
Technology: PowerTrench®
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET x2
Drain-source voltage: 25V
Power dissipation: 0.9W
Drain current: 0.68A
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Kind of package: reel; tape
Gate charge: 2.3nC
Technology: PowerTrench®
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET x2
Drain-source voltage: 25V
Power dissipation: 0.9W
Drain current: 0.68A
Case: SuperSOT-6
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FDC634P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
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FDC6329L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
On-state resistance: 0.105Ω
Output current: 2.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
On-state resistance: 0.105Ω
Output current: 2.5A
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FDC6326L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 1.8A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 1.8A
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FDC6320C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Type of transistor: N/P-MOSFET
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MC74VHC1GT14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 84000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.35 грн |
M74VHC1GT14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: TTL
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: TTL
Family: VHC
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FFSP2065B |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
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FFSP2065A |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
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FFSP2065B-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Application: automotive industry
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FFSP2065BDN-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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MBRB20H100CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
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SBRB20200CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
товару немає в наявності
В кошику
од. на суму грн.
NCP51199PDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.