Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NRVHPM120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Max. off-state voltage: 200V Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Case: POWERMITE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR440RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 4A; reel,tape; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Case: DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC33164D-3R2G | ONSEMI |
![]() Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
на замовлення 57500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
MC34164D-5G | ONSEMI |
![]() Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
на замовлення 1614 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
MUN2214T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.23W |
на замовлення 5580 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MUN2233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.23W |
на замовлення 640 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MUN2212T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Power dissipation: 0.23W |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
SMUN2214T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.23W Application: automotive industry |
на замовлення 2740 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
NVMFD5877NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Case: DFN8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 12W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SBRD8835LG | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube Mounting: SMD Case: DPAK Max. off-state voltage: 35V Max. forward voltage: 0.51V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 75A Kind of package: tube Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRD8835LT4G-VF01 | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape Mounting: SMD Case: DPAK Max. off-state voltage: 35V Max. forward voltage: 0.41V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 75A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
MC14512BDR2G | ONSEMI |
![]() Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape Supply voltage: 3...18V DC Number of channels: 8 Kind of package: reel; tape Technology: TTL Kind of integrated circuit: data selector Mounting: SMD Operating temperature: -40...85°C Case: SO16 Type of integrated circuit: digital |
на замовлення 551 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
MC74LCX125DTG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Supply voltage: 2...3.6V DC Number of channels: 4 Kind of output: 3-state Manufacturer series: LCX Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Case: TSSOP14 Type of integrated circuit: digital |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
NTB011N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W Mounting: SMD Power dissipation: 136.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 323A Case: D2PAK Drain-source voltage: 150V Drain current: 75.4A On-state resistance: 10.9mΩ Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP3420DR2G | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.6...13.2V DC Mounting: SMD Operating temperature: 0...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP51530BDR2G | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 700V Output current: -3...3.5A Impulse rise time: 15ns Pulse fall time: 15ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP51561BADWR2G | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Output current: -9...4.5A Impulse rise time: 19ns Pulse fall time: 19ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP51561BBDWR2G | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Output current: -9...4.5A Impulse rise time: 19ns Pulse fall time: 19ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP51705MNTXG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: QFN24 Supply voltage: -8...0V DC; 10...22V DC Mounting: SMD Operating temperature: -40...125°C Output current: -6...6A Impulse rise time: 15ns Pulse fall time: 15ns Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81151BMNTBG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81075MTTXG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: WDFN10 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Output current: -4...4A Impulse rise time: 8ns Pulse fall time: 7ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP51530BMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN10 Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 700V Output current: -3...3.5A Impulse rise time: 15ns Pulse fall time: 15ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP81075DR2G | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Output current: -4...4A Impulse rise time: 8ns Pulse fall time: 7ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP81075MNTXG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Output current: -4...4A Impulse rise time: 8ns Pulse fall time: 7ns Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81155MNTXG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81253MNTBG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP5901BDR2G | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP5901DR2G | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP5901MNTBG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81152MNTWG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; QFN16 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: QFN16 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81062MNTWG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81145MNTBG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81146MNTBG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81158MNTXG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP81258MNTBG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP5183DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Output current: -4.3...4.3A Impulse rise time: 40ns Pulse fall time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP302045MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN31 5X5 Output current: 45A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP302035MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN31 5X5 Output current: 35A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP303150MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN39 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Output current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP5109ADR2G | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 200V Output current: -500...250mA Impulse rise time: 160ns Pulse fall time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
NCP4306AAAZZZADR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP4306AAAZZZAMN1TBG | ONSEMI |
![]() Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP4306AADZZZADR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP4306AADZZZAMN1TBG | ONSEMI |
![]() Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP4306AADZZZAMNTWG | ONSEMI |
![]() Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
NCP4306AAHZZZADR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP4306DADZZBASNT1G | ONSEMI |
![]() Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: TSOP6 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP4306DADZZDASNT1G | ONSEMI |
![]() Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: TSOP6 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP4306DAHZZAASNT1G | ONSEMI |
![]() Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: TSOP6 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N4935G | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N4935RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
MMSD4448 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.4W |
на замовлення 3870 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
NTJD5121NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD Case: SC70-6; SC88; SOT363 Mounting: SMD Drain-source voltage: 60V Drain current: 0.295A On-state resistance: 2.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 0.9nC Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1585 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
NVJD5121NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Drain-source voltage: 60V Drain current: 0.212A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
NCP1075STCT3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 117...143kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1063AP060G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC Type of integrated circuit: PMIC Case: DIP7 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: buck; buck-boost; flyback Operating voltage: 7...20V DC Frequency: 54...66kHz On-state resistance: 14Ω Output current: 0.78A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1060AP100G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC Type of integrated circuit: PMIC Case: DIP7 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: buck; buck-boost; flyback Operating voltage: 7...20V DC Frequency: 90...110kHz On-state resistance: 41Ω Output current: 0.3A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1072P100BG | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC Type of integrated circuit: PMIC Case: DIP7 Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating voltage: 6.3...10V DC Frequency: 90...110kHz On-state resistance: 16Ω Output current: 0.25A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1075P065G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC Type of integrated circuit: PMIC Case: DIP7 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating voltage: 6.3...10V DC Frequency: 59...71kHz On-state resistance: 16Ω Output current: 0.45A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1076AAP065G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Case: DIP8 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating voltage: 6.5...20V DC Frequency: 59...71kHz On-state resistance: 6.8Ω Output current: 0.65A Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. |
NRVHPM120T3G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Max. off-state voltage: 200V
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: POWERMITE
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Max. off-state voltage: 200V
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: POWERMITE
товару немає в наявності
В кошику
од. на суму грн.
MUR440RLG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
товару немає в наявності
В кошику
од. на суму грн.
MC33164D-3R2G |
![]() |
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 57500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 29.13 грн |
MC34164D-5G |
![]() |
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 1614 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
98+ | 40.85 грн |
MUN2214T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
на замовлення 5580 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
73+ | 5.29 грн |
100+ | 4.73 грн |
500+ | 1.79 грн |
1372+ | 1.69 грн |
MUN2233T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
на замовлення 640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
59+ | 6.51 грн |
100+ | 4.02 грн |
500+ | 1.79 грн |
MUN2212T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.23W
на замовлення 21 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
SMUN2214T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
на замовлення 2740 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
59+ | 6.51 грн |
80+ | 4.81 грн |
100+ | 4.27 грн |
407+ | 2.20 грн |
1117+ | 2.08 грн |
NVMFD5877NLT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Case: DFN8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 12W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Case: DFN8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 12W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
SBRD8835LG |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; tube
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
SBRD8835LT4G-VF01 |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.41V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Mounting: SMD
Case: DPAK
Max. off-state voltage: 35V
Max. forward voltage: 0.41V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
MC14512BDR2G |
![]() |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Supply voltage: 3...18V DC
Number of channels: 8
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: data selector
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; reel,tape
Supply voltage: 3...18V DC
Number of channels: 8
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: data selector
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
Type of integrated circuit: digital
на замовлення 551 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.85 грн |
11+ | 37.55 грн |
25+ | 31.80 грн |
45+ | 20.23 грн |
122+ | 19.16 грн |
MC74LCX125DTG |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...3.6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: LCX
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...3.6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: LCX
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: digital
на замовлення 85 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.42 грн |
10+ | 45.90 грн |
32+ | 28.81 грн |
NTB011N15MC |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
Power dissipation: 136.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 323A
Case: D2PAK
Drain-source voltage: 150V
Drain current: 75.4A
On-state resistance: 10.9mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
Power dissipation: 136.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 323A
Case: D2PAK
Drain-source voltage: 150V
Drain current: 75.4A
On-state resistance: 10.9mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
NCP3420DR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
товару немає в наявності
В кошику
од. на суму грн.
NCP51530BDR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
товару немає в наявності
В кошику
од. на суму грн.
NCP51561BADWR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
NCP51561BBDWR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Impulse rise time: 19ns
Pulse fall time: 19ns
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
NCP51705MNTXG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
товару немає в наявності
В кошику
од. на суму грн.
NCP81151BMNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81075MTTXG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
NCP51530BMNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 700V
Output current: -3...3.5A
Impulse rise time: 15ns
Pulse fall time: 15ns
товару немає в наявності
В кошику
од. на суму грн.
NCP81075DR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
NCP81075MNTXG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Output current: -4...4A
Impulse rise time: 8ns
Pulse fall time: 7ns
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
NCP81155MNTXG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81253MNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику
од. на суму грн.
NCP5901BDR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP5901DR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP5901MNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81152MNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81062MNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81145MNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81146MNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81158MNTXG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
товару немає в наявності
В кошику
од. на суму грн.
NCP81258MNTBG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товару немає в наявності
В кошику
од. на суму грн.
NCP5183DR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -4.3...4.3A
Impulse rise time: 40ns
Pulse fall time: 40ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -4.3...4.3A
Impulse rise time: 40ns
Pulse fall time: 40ns
товару немає в наявності
В кошику
од. на суму грн.
NCP302045MNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 45A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 45A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
товару немає в наявності
В кошику
од. на суму грн.
NCP302035MNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 35A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 35A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
товару немає в наявності
В кошику
од. на суму грн.
NCP303150MNTWG |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 50A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 50A
товару немає в наявності
В кошику
од. на суму грн.
NCP5109ADR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 200V
Output current: -500...250mA
Impulse rise time: 160ns
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 200V
Output current: -500...250mA
Impulse rise time: 160ns
Pulse fall time: 75ns
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AAAZZZADR2G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AAAZZZAMN1TBG |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AADZZZADR2G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AADZZZAMN1TBG |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AADZZZAMNTWG |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306AAHZZZADR2G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306DADZZBASNT1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306DADZZDASNT1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP4306DAHZZAASNT1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: TSOP6
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
В кошику
од. на суму грн.
1N4935G |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
товару немає в наявності
В кошику
од. на суму грн.
1N4935RLG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
товару немає в наявності
В кошику
од. на суму грн.
MMSD4448 |
![]() ![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
на замовлення 3870 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
60+ | 6.44 грн |
76+ | 5.06 грн |
90+ | 4.28 грн |
100+ | 3.85 грн |
500+ | 3.59 грн |
1000+ | 3.56 грн |
NTJD5121NT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Case: SC70-6; SC88; SOT363
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.295A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Case: SC70-6; SC88; SOT363
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.295A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.16 грн |
37+ | 10.42 грн |
51+ | 7.60 грн |
100+ | 6.67 грн |
230+ | 3.90 грн |
632+ | 3.69 грн |
NVJD5121NT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.212A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.212A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.98 грн |
43+ | 8.97 грн |
100+ | 6.44 грн |
NCP1075STCT3G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP1063AP060G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
NCP1060AP100G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
NCP1072P100BG |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.25A
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.25A
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
NCP1075P065G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
NCP1076AAP065G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.5...20V DC
Frequency: 59...71kHz
On-state resistance: 6.8Ω
Output current: 0.65A
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.5...20V DC
Frequency: 59...71kHz
On-state resistance: 6.8Ω
Output current: 0.65A
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.