Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTR2101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.96W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: -8V Drain current: -3A On-state resistance: 52mΩ Type of transistor: P-MOSFET |
на замовлення 1971 шт: термін постачання 21-30 дні (днів) |
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FDN306P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.6A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 3476 шт: термін постачання 21-30 дні (днів) |
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MMBTA14LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMMBTA14LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SD05T1G | ONSEMI |
![]() Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape; ESD Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Version: ESD Max. forward impulse current: 24A |
на замовлення 594 шт: термін постачання 21-30 дні (днів) |
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FFSD10120A | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 22A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCV431ASNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: TSOP5 Operating temperature: -40...125°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DF02S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 3206 шт: термін постачання 21-30 дні (днів) |
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NDT3055L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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NTF3055L108T1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 9A |
на замовлення 1764 шт: термін постачання 21-30 дні (днів) |
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RFD3055LESM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 377 шт: термін постачання 21-30 дні (днів) |
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NVF3055L108T1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NTD3055L170T4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP1246ALD065R2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Operating voltage: 8.9...26.5V DC Frequency: 58...72kHz Output current: 500...800mA Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...125°C Case: SO7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMUN2115LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
на замовлення 3226 шт: термін постачання 21-30 дні (днів) |
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MMUN2136LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
на замовлення 2505 шт: термін постачання 21-30 дні (днів) |
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MMUN2134LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 3303 шт: термін постачання 21-30 дні (днів) |
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MMUN2133LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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MMUN2138LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
на замовлення 3640 шт: термін постачання 21-30 дні (днів) |
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MMUN2112LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 560 шт: термін постачання 21-30 дні (днів) |
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MMUN2131LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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MMUN2137LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2113LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Collector-emitter voltage: 50V Current gain: 80...140 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.246W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2132LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2116LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2135LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2113LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Collector-emitter voltage: 50V Current gain: 80...140 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.246W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2130LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2140LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHCT373ADTRG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...85°C Case: TSSOP20 Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; D latch; octal Family: VHCT Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC74VHCT373ADWRG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO20WB Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3-state; D latch; octal Family: VHCT Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX79C2V7 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 75µA Manufacturer series: BZX79C |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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NCV7343D20R2G | ONSEMI |
![]() Description: IC: interface Type of integrated circuit: interface |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT132ADR2G | ONSEMI |
![]() Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT Type of integrated circuit: digital Number of channels: 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: VHCT Kind of gate: NAND Technology: CMOS; TTL Kind of integrated circuit: Schmitt trigger Family: VHCT Mounting: SMD Operating temperature: -40...85°C Case: SOIC14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRS130LT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.395V |
на замовлення 4664 шт: термін постачання 21-30 дні (днів) |
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FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2 Type of integrated circuit: analog switch Number of channels: 2 Case: UMLP10 Supply voltage: 1.65...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: SPDT x2 Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS6680A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1630 шт: термін постачання 21-30 дні (днів) |
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74VHC14M | ONSEMI |
![]() ![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Manufacturer series: VHC Quiescent current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MURB1620CTT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.895V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
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MURB1620CTRT4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common anode; double Case: D2PAK Kind of package: reel; tape Reverse recovery time: 85ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MURF1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS14 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 9834 шт: термін постачання 21-30 дні (днів) |
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NRVHP820LFST1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A Mounting: SMD Max. off-state voltage: 200V Max. load current: 16A Max. forward voltage: 1V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 175A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Case: LFPAK56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NTD360N80S3Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Case: DPAK Drain-source voltage: 800V Drain current: 8.2A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 32.5A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS4480 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.8A Pulsed drain current: 45A Power dissipation: 2.5W Case: SO8 On-state resistance: 21mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2385 шт: термін постачання 21-30 дні (днів) |
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FDG6304P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W Drain-source voltage: -25V Drain current: -0.41A On-state resistance: 1.9Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SC70-6; SC88; SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H350FNG | ONSEMI |
![]() Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H Type of integrated circuit: digital Number of channels: 4 Kind of package: tube Manufacturer series: 10H Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Mounting: SMD Operating temperature: 0...75°C Case: PLCC20 Number of inputs: 8 Number of outputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP81234MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck Type of integrated circuit: PMIC Input voltage: 4.5...20V Output voltage: 5.2...5.5V Frequency: 180...1320kHz Mounting: SMD Case: QFN28 Topology: buck Number of channels: 2 Operating temperature: -40...125°C |
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В кошику од. на суму грн. | |||||||||||||||
NC7WZ17P6X-L22347 | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Part status: Not recommended for new designs |
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В кошику од. на суму грн. | |||||||||||||||
NC7WZ17L6X | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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MM3Z12VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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MM3Z16VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 1871 шт: термін постачання 21-30 дні (днів) |
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MM3Z24VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 24V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 5669 шт: термін постачання 21-30 дні (днів) |
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MM3Z27VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 27V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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MM3Z30VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 30V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 5809 шт: термін постачання 21-30 дні (днів) |
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MM3Z15VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 15V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 1224 шт: термін постачання 21-30 дні (днів) |
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MM3Z13VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z12VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.3W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 12V Application: automotive industry Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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MM3Z33VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 33V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM3Z10VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 10V Type of diode: Zener Manufacturer series: MM3ZxxST1G Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. |
NTR2101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.64 грн |
22+ | 17.86 грн |
50+ | 13.76 грн |
100+ | 12.30 грн |
137+ | 6.73 грн |
375+ | 6.34 грн |
FDN306P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3476 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.63 грн |
15+ | 27.45 грн |
67+ | 13.69 грн |
183+ | 12.99 грн |
1000+ | 12.45 грн |
MMBTA14LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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од. на суму грн.
SMMBTA14LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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В кошику
од. на суму грн.
SD05T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Version: ESD
Max. forward impulse current: 24A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Version: ESD
Max. forward impulse current: 24A
на замовлення 594 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.49 грн |
35+ | 11.21 грн |
50+ | 8.09 грн |
100+ | 7.03 грн |
187+ | 4.89 грн |
513+ | 4.62 грн |
FFSD10120A |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
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В кошику
од. на суму грн.
NCV431ASNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Application: automotive industry
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В кошику
од. на суму грн.
DF02S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 3206 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.79 грн |
12+ | 34.64 грн |
46+ | 20.18 грн |
125+ | 19.10 грн |
500+ | 18.87 грн |
1000+ | 18.40 грн |
NDT3055L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.94 грн |
10+ | 51.42 грн |
27+ | 34.64 грн |
73+ | 32.79 грн |
250+ | 32.17 грн |
500+ | 29.08 грн |
1000+ | 27.14 грн |
NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
на замовлення 1764 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.12 грн |
10+ | 46.94 грн |
35+ | 26.60 грн |
95+ | 25.13 грн |
1000+ | 24.28 грн |
RFD3055LESM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 377 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.44 грн |
11+ | 38.20 грн |
25+ | 30.70 грн |
34+ | 26.99 грн |
93+ | 25.52 грн |
NVF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
NTD3055L170T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
NCP1246ALD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Operating voltage: 8.9...26.5V DC
Frequency: 58...72kHz
Output current: 500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: SO7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Operating voltage: 8.9...26.5V DC
Frequency: 58...72kHz
Output current: 500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: SO7
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од. на суму грн.
MMUN2115LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
на замовлення 3226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.16 грн |
73+ | 5.34 грн |
115+ | 3.37 грн |
500+ | 2.50 грн |
808+ | 1.13 грн |
2223+ | 1.07 грн |
MMUN2136LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
на замовлення 2505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.66 грн |
1029+ | 0.88 грн |
MMUN2134LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 3303 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
382+ | 1.09 грн |
625+ | 0.62 грн |
MMUN2133LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
47+ | 8.99 грн |
79+ | 4.95 грн |
108+ | 3.87 грн |
MMUN2138LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
на замовлення 3640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.16 грн |
148+ | 2.63 грн |
226+ | 1.72 грн |
500+ | 1.32 грн |
1000+ | 1.20 грн |
1029+ | 0.88 грн |
2833+ | 0.84 грн |
MMUN2112LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
83+ | 5.06 грн |
136+ | 2.86 грн |
164+ | 2.36 грн |
177+ | 2.20 грн |
211+ | 1.84 грн |
248+ | 1.56 грн |
MMUN2131LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
76+ | 5.50 грн |
103+ | 3.79 грн |
132+ | 2.94 грн |
220+ | 1.76 грн |
MMUN2137LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 10 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
MMUN2113LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Current gain: 80...140
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.246W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Current gain: 80...140
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.246W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
MMUN2132LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.
MMUN2116LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.
MMUN2135LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
товару немає в наявності
В кошику
од. на суму грн.
MMUN2113LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Current gain: 80...140
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.246W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Current gain: 80...140
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.246W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
MMUN2130LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
товару немає в наявності
В кошику
од. на суму грн.
MMUN2140LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
товару немає в наявності
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од. на суму грн.
MC74VHCT373ADTRG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
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од. на суму грн.
MC74VHCT373ADWRG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; D latch; octal
Family: VHCT
Mounting: SMD
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од. на суму грн.
BZX79C2V7 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: BZX79C
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.99 грн |
58+ | 6.73 грн |
71+ | 5.49 грн |
118+ | 3.29 грн |
250+ | 2.47 грн |
477+ | 1.91 грн |
1000+ | 1.74 грн |
NCV7343D20R2G |
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Виробник: ONSEMI
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 49.22 грн |
MC74VHCT132ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHCT
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHCT
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
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од. на суму грн.
MBRS130LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.395V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.395V
на замовлення 4664 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.15 грн |
26+ | 14.92 грн |
50+ | 11.06 грн |
100+ | 9.74 грн |
126+ | 7.19 грн |
346+ | 6.80 грн |
1000+ | 6.57 грн |
FSA2259UMX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: CMOS; TTL
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од. на суму грн.
FDS6680A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.46 грн |
10+ | 50.11 грн |
27+ | 34.02 грн |
74+ | 32.17 грн |
500+ | 30.93 грн |
74VHC14M | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Quiescent current: 20µA
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MURB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 634 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.41 грн |
10+ | 84.29 грн |
15+ | 64.18 грн |
40+ | 60.32 грн |
500+ | 58.00 грн |
MURB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Reverse recovery time: 85ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common anode; double
Case: D2PAK
Kind of package: reel; tape
Reverse recovery time: 85ns
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MURF1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; TO220FP
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
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SS14 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 9834 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.16 грн |
43+ | 9.20 грн |
100+ | 6.65 грн |
177+ | 5.10 грн |
486+ | 4.87 грн |
7500+ | 4.64 грн |
NRVHP820LFST1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 175A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Case: LFPAK56
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; LFPAK56; Ufmax: 1V; Ifsm: 175A
Mounting: SMD
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 175A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Case: LFPAK56
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NTD360N80S3Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Drain-source voltage: 800V
Drain current: 8.2A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Drain-source voltage: 800V
Drain current: 8.2A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Mounting: SMD
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FDS4480 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.62 грн |
7+ | 58.77 грн |
21+ | 44.93 грн |
56+ | 42.53 грн |
500+ | 41.91 грн |
FDG6304P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Drain-source voltage: -25V
Drain current: -0.41A
On-state resistance: 1.9Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Drain-source voltage: -25V
Drain current: -0.41A
On-state resistance: 1.9Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70-6; SC88; SOT363
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MC10H350FNG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Manufacturer series: 10H
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: 0...75°C
Case: PLCC20
Number of inputs: 8
Number of outputs: 4
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NCP81234MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
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NC7WZ17P6X-L22347 |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
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NC7WZ17L6X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 7.00 грн |
MM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 469 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.16 грн |
95+ | 4.10 грн |
121+ | 3.22 грн |
149+ | 2.60 грн |
182+ | 2.13 грн |
MM3Z16VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1871 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.16 грн |
71+ | 5.49 грн |
141+ | 2.76 грн |
677+ | 1.34 грн |
1860+ | 1.27 грн |
MM3Z24VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 5669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.79 грн |
74+ | 5.26 грн |
93+ | 4.18 грн |
145+ | 2.67 грн |
500+ | 1.67 грн |
751+ | 1.21 грн |
2064+ | 1.14 грн |
MM3Z27VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 27V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 27V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.33 грн |
76+ | 5.10 грн |
98+ | 3.96 грн |
141+ | 2.75 грн |
500+ | 1.87 грн |
651+ | 1.39 грн |
1789+ | 1.31 грн |
MM3Z30VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 30V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 30V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 5809 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.66 грн |
53+ | 7.35 грн |
100+ | 3.98 грн |
386+ | 2.34 грн |
1000+ | 2.32 грн |
1061+ | 2.22 грн |
3000+ | 2.18 грн |
MM3Z15VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 15V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 15V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 1224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.52 грн |
93+ | 4.18 грн |
138+ | 2.81 грн |
162+ | 2.39 грн |
500+ | 1.67 грн |
672+ | 1.35 грн |
MM3Z13VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.99 грн |
39+ | 9.98 грн |
51+ | 7.70 грн |
100+ | 5.00 грн |
325+ | 2.78 грн |
894+ | 2.63 грн |
SZMM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Application: automotive industry
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 12V
Application: automotive industry
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
на замовлення 820 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.99 грн |
33+ | 11.99 грн |
50+ | 8.27 грн |
100+ | 7.11 грн |
152+ | 5.95 грн |
416+ | 5.64 грн |
MM3Z33VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 33V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 33V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
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MM3Z10VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 10V
Type of diode: Zener
Manufacturer series: MM3ZxxST1G
Tolerance: ±2%
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