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NLV74HC4538ADR2G NLV74HC4538ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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1N5344BRLG 1N5344BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 2315 шт:
термін постачання 21-30 дні (днів)
13+33.38 грн
16+25.02 грн
50+19.50 грн
66+13.53 грн
180+12.77 грн
1000+12.32 грн
Мінімальне замовлення: 13
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1N5344BG 1N5344BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
15+28.49 грн
20+19.88 грн
50+16.48 грн
71+12.47 грн
Мінімальне замовлення: 15
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NCP45524IMNTWG-H ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45523IMNTWG-H ONSEMI Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45522IMNTWG-H ONSEMI Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45524IMNTWG-L ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45525IMNTWG-H ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
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NCP45525IMNTWG-L ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
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NCP4304AMNTWG ONSEMI ncp4304-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Operating voltage: 8.9...30V DC
Frequency: 0.5MHz
Output current: 2.5...5A
Number of channels: 1
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NCP43080DMNTWG ONSEMI ncp43080-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 3.95...37V DC
Frequency: 1MHz
Output current: 4...8A
Number of channels: 1
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NCP51190MNTAG NCP51190MNTAG ONSEMI NCP51190.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Output current: 1.5A
Number of channels: 1
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NCV51190MNTAG NCV51190MNTAG ONSEMI NCP51190.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Output current: 1.5A
Number of channels: 1
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FDA59N25 FDA59N25 ONSEMI fda59n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
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NCV1455BDR2G NCV1455BDR2G ONSEMI MC1455.pdf Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Controlled voltage: 10V
на замовлення 2251 шт:
термін постачання 21-30 дні (днів)
11+39.89 грн
13+29.40 грн
43+21.01 грн
116+19.88 грн
500+19.65 грн
1000+19.12 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MJW21193G MJW21193G ONSEMI MJW21193G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO247-3
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FGB3245G2-F085 ONSEMI fgd3245g2-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDN336P FDN336P ONSEMI FDN336P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.32Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)
11+37.45 грн
16+24.04 грн
50+19.35 грн
71+12.47 грн
195+11.79 грн
1000+11.34 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2N7002LT7G ONSEMI 2n7002l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002L ONSEMI 2n7002l_fcs-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 54470 шт:
термін постачання 21-30 дні (днів)
3000+2.52 грн
Мінімальне замовлення: 3000
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M74HCT4052ADTR2G ONSEMI mc74hct4051a-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Number of inputs: 5
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Family: HCT
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MC74HCT4052ADR2G MC74HCT4052ADR2G ONSEMI mc74hct4051a-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Family: HCT
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NSR01F30MXT5G ONSEMI nsr01f30mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: X3DFN2
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NSR01F30NXT5G ONSEMI nsr01f30-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0201; SMD; 30V; 0.1A; reel,tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 4A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: 0201
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MC74ACT132DG MC74ACT132DG ONSEMI mc74ac132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
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MC74ACT132DR2G MC74ACT132DR2G ONSEMI mc74ac132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
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MC74LVX132DR2G ONSEMI MC74LVX132-D.pdf Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Manufacturer series: LVX
Kind of integrated circuit: Schmitt trigger
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MC74LVX132DTG ONSEMI MC74LVX132-D.pdf Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of integrated circuit: Schmitt trigger
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NLVVHC1G132DFT1G ONSEMI mc74vhc1g132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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NLVVHC1G132DTT1G NLVVHC1G132DTT1G ONSEMI mc74vhc1g132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
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MC74VHC1G132DFT1G ONSEMI M74VHC1G132DFT1G.PDF Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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SZ1SMB5914BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP1337DR2G ONSEMI ncp1337-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
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MMSD701T1G MMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Capacitance: 1pF
Mounting: SMD
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
на замовлення 3228 шт:
термін постачання 21-30 дні (днів)
30+13.84 грн
45+8.47 грн
57+6.74 грн
100+6.05 грн
244+3.64 грн
669+3.44 грн
Мінімальне замовлення: 30
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FDS3992 FDS3992 ONSEMI FDS3992.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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MM3Z15VT1G MM3Z15VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)
50+8.14 грн
74+5.14 грн
96+3.96 грн
117+3.25 грн
143+2.65 грн
250+2.06 грн
660+1.35 грн
Мінімальне замовлення: 50
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SZMM3Z15VT1G SZMM3Z15VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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EGP20K ONSEMI egp20k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: THT
Case: DO15
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NB6N11SMNG NB6N11SMNG ONSEMI nb6n11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Case: QFN16
Supply voltage: 3.8V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer; translator
Mounting: SMD
Operating temperature: -40...85°C
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MBRF30L60CTG ONSEMI mbr30l60ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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FDMT80040DC ONSEMI fdmt80040dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 40V
Drain current: 265A
On-state resistance: 0.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 338nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2644A
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FDMT800100DC ONSEMI fdmt800100dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 100V
Drain current: 102A
On-state resistance: 5.39mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 111nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 989A
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FDMT800120DC ONSEMI fdmt800120dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 120V
Drain current: 81A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 767A
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FDMT800150DC ONSEMI fdmt800150dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 150V
Drain current: 62A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 561A
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FDMT800152DC ONSEMI fdmt800152dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 413A
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FDMT80060DC ONSEMI fdmt80060dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 60V
Drain current: 184A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 238nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1825A
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2SC4027S-TL-E ONSEMI en2262-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Frequency: 120MHz
Collector-emitter voltage: 160V
Current gain: 140...280
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
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FPF2595UCX ONSEMI fpf2595-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.5...5.5V DC
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Mounting: SMD
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SZ1SMB5934BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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SZ1SMA5934BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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BCW66GLT1G BCW66GLT1G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BCW66GLT3G BCW66GLT3G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBCW66GLT1G SBCW66GLT1G ONSEMI bcw66glt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMSZ24T1G MMSZ24T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 1037 шт:
термін постачання 21-30 дні (днів)
42+9.77 грн
54+7.11 грн
62+6.12 грн
97+3.92 грн
117+3.25 грн
459+1.94 грн
Мінімальне замовлення: 42
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SZMMSZ24T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
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FGY75T120SWD ONSEMI fgy75t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 214nC
Kind of package: tube
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MJH6284G MJH6284G ONSEMI MJH6284G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Collector-emitter voltage: 100V
Collector current: 20A
Type of transistor: NPN
Power dissipation: 160W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
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BC847BM3T5G BC847BM3T5G ONSEMI bc847bm3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
28+14.65 грн
46+8.39 грн
65+5.87 грн
100+5.06 грн
250+4.22 грн
284+3.14 грн
779+2.97 грн
Мінімальне замовлення: 28
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NLV74HC4538ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331
NLV74HC4538ADR2G
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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1N5344BRLG description 1N53xx.PDF
1N5344BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 2315 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.38 грн
16+25.02 грн
50+19.50 грн
66+13.53 грн
180+12.77 грн
1000+12.32 грн
Мінімальне замовлення: 13
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1N5344BG 1N53xx.PDF
1N5344BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.49 грн
20+19.88 грн
50+16.48 грн
71+12.47 грн
Мінімальне замовлення: 15
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NCP45524IMNTWG-H ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45523IMNTWG-H
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45522IMNTWG-H
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45524IMNTWG-L ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
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NCP45525IMNTWG-H ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
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NCP45525IMNTWG-L ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
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NCP4304AMNTWG ncp4304-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Operating voltage: 8.9...30V DC
Frequency: 0.5MHz
Output current: 2.5...5A
Number of channels: 1
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NCP43080DMNTWG ncp43080-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 3.95...37V DC
Frequency: 1MHz
Output current: 4...8A
Number of channels: 1
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NCP51190MNTAG NCP51190.pdf
NCP51190MNTAG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Output current: 1.5A
Number of channels: 1
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NCV51190MNTAG NCP51190.pdf
NCV51190MNTAG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Output current: 1.5A
Number of channels: 1
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FDA59N25 fda59n25-d.pdf
FDA59N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
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NCV1455BDR2G MC1455.pdf
NCV1455BDR2G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Controlled voltage: 10V
на замовлення 2251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.89 грн
13+29.40 грн
43+21.01 грн
116+19.88 грн
500+19.65 грн
1000+19.12 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MJW21193G MJW21193G.PDF
MJW21193G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO247-3
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FGB3245G2-F085 fgd3245g2-f085-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDN336P FDN336P.pdf
FDN336P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.32Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+37.45 грн
16+24.04 грн
50+19.35 грн
71+12.47 грн
195+11.79 грн
1000+11.34 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2N7002LT7G 2n7002l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002L 2n7002l_fcs-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 54470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M74HCT4052ADTR2G mc74hct4051a-d.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Number of inputs: 5
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Family: HCT
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MC74HCT4052ADR2G mc74hct4051a-d.pdf
MC74HCT4052ADR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Family: HCT
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NSR01F30MXT5G nsr01f30mx-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: X3DFN2
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NSR01F30NXT5G nsr01f30-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0201; SMD; 30V; 0.1A; reel,tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 4A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: 0201
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MC74ACT132DG mc74ac132-d.pdf
MC74ACT132DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
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MC74ACT132DR2G mc74ac132-d.pdf
MC74ACT132DR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: ACT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
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MC74LVX132DR2G MC74LVX132-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Manufacturer series: LVX
Kind of integrated circuit: Schmitt trigger
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MC74LVX132DTG MC74LVX132-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of integrated circuit: Schmitt trigger
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NLVVHC1G132DFT1G mc74vhc1g132-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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NLVVHC1G132DTT1G mc74vhc1g132-d.pdf
NLVVHC1G132DTT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
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MC74VHC1G132DFT1G M74VHC1G132DFT1G.PDF
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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SZ1SMB5914BT3G 1SMB59xxBT3G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP1337DR2G ncp1337-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
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MMSD701T1G mmsd301t1-d.pdf
MMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Capacitance: 1pF
Mounting: SMD
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
на замовлення 3228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+13.84 грн
45+8.47 грн
57+6.74 грн
100+6.05 грн
244+3.64 грн
669+3.44 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
FDS3992 FDS3992.pdf
FDS3992
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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MM3Z15VT1G MM3ZxxT1G.PDF
MM3Z15VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.14 грн
74+5.14 грн
96+3.96 грн
117+3.25 грн
143+2.65 грн
250+2.06 грн
660+1.35 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SZMM3Z15VT1G MM3ZxxT1G.PDF
SZMM3Z15VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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EGP20K egp20k-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: THT
Case: DO15
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NB6N11SMNG nb6n11s-d.pdf
NB6N11SMNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Case: QFN16
Supply voltage: 3.8V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer; translator
Mounting: SMD
Operating temperature: -40...85°C
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MBRF30L60CTG mbr30l60ct-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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FDMT80040DC fdmt80040dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 40V
Drain current: 265A
On-state resistance: 0.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 338nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2644A
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FDMT800100DC fdmt800100dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 100V
Drain current: 102A
On-state resistance: 5.39mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 111nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 989A
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FDMT800120DC fdmt800120dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 120V
Drain current: 81A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 767A
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FDMT800150DC fdmt800150dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 150V
Drain current: 62A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 561A
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FDMT800152DC fdmt800152dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 83nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 413A
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FDMT80060DC fdmt80060dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Mounting: SMD
Case: DFNW8
Drain-source voltage: 60V
Drain current: 184A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 238nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1825A
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2SC4027S-TL-E en2262-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Frequency: 120MHz
Collector-emitter voltage: 160V
Current gain: 140...280
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
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FPF2595UCX fpf2595-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.5...5.5V DC
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Kind of package: reel; tape
Mounting: SMD
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SZ1SMB5934BT3G 1SMB59xxBT3G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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SZ1SMA5934BT3G 1SMA59xxBT3.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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BCW66GLT1G bcw66glt1-d.pdf
BCW66GLT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BCW66GLT3G bcw66glt1-d.pdf
BCW66GLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBCW66GLT1G bcw66glt1-d.pdf
SBCW66GLT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMSZ24T1G MMSZxxxT1G.PDF
MMSZ24T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 1037 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+9.77 грн
54+7.11 грн
62+6.12 грн
97+3.92 грн
117+3.25 грн
459+1.94 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SZMMSZ24T1G MMSZxxxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
товару немає в наявності
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FGY75T120SWD fgy75t120swd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 214nC
Kind of package: tube
товару немає в наявності
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MJH6284G MJH6284G.PDF
MJH6284G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Collector-emitter voltage: 100V
Collector current: 20A
Type of transistor: NPN
Power dissipation: 160W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
BC847BM3T5G bc847bm3-d.pdf
BC847BM3T5G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.65 грн
46+8.39 грн
65+5.87 грн
100+5.06 грн
250+4.22 грн
284+3.14 грн
779+2.97 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
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