Продукція > ONSEMI > Всі товари виробника ONSEMI (147167) > Сторінка 2448 з 2453

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NVMFS6H848NWFT1G ONSEMI nvmfs6h848n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 57A; Idm: 308A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 57A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 308A
Gate charge: 16nC
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NVMFS6H852NLWFT1G ONSEMI nvmfs6h852nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 208A
Gate charge: 17nC
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NVMFS6H852NT1G ONSEMI nvmfs6h852n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 13nC
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NVMFS6H852NWFT1G ONSEMI nvmfs6h852n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 13nC
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NVMFS6H858NT1G ONSEMI nvmfs6h858n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
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NVMFS6H858NWFT1G ONSEMI nvmfs6h858n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
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NVMFS6H864NLT1G ONSEMI nvmfs6h864nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
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NVMFS6H864NLWFT1G ONSEMI nvmfs6h864nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
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NVMFS6H864NT1G ONSEMI nvmfs6h864n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 92A; 16W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Power dissipation: 16W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 92A
Gate charge: 6.9nC
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MBRA130LT3G MBRA130LT3G ONSEMI MBRA130LT3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. load current: 2A
Kind of package: reel; tape
на замовлення 923 шт:
термін постачання 14-30 дні (днів)
12+38.48 грн
22+19.48 грн
50+14.77 грн
100+13.04 грн
115+8.17 грн
317+7.76 грн
Мінімальне замовлення: 12 шт
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HCPL0600 HCPL0600 ONSEMI HCPL0600.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
Insulation voltage: 3.75kV
Output voltage: 7V
на замовлення 2740 шт:
термін постачання 14-30 дні (днів)
5+104.87 грн
10+80.88 грн
25+67.67 грн
31+30.54 грн
85+28.88 грн
Мінімальне замовлення: 5 шт
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NVHL020N090SC1 NVHL020N090SC1 ONSEMI NVHL020N090SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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BAV70 BAV70 ONSEMI BAV70.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 1.5pF
Max. forward impulse current: 2A
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NCS2211MNTXG NCS2211MNTXG ONSEMI ncs2211-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; DFN8
Operating temperature: -40...85°C
Output power: 1W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 8Ω
Amplifier class: AB
Kind of package: reel; tape
Case: DFN8
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
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NCS2250SQ2T2G ONSEMI NC%28S%2CV%292250%2C2.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SC70-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SC70-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2211DR2G ONSEMI ncs2211-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; 8Ω
Output power: 1W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 8Ω
Amplifier class: AB
Kind of package: reel; tape
Case: SO8-W
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
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NCS2200SN2T1G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2202SQ1T2G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2250SN2T1G ONSEMI NC%28S%2CV%292250%2C2.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SOT23-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SOT23-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2200SQ2T2G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2200AMUT1G ONSEMI Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2200SN1T1G NCS2200SN1T1G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 0.85÷6V; SMT; SOT23; reel,tape
Operating temperature: -40...105°C
Input offset voltage: 12mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23
Operating voltage: 0.85...6V
Kind of comparator: low-power
Mounting: SMT
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NCS2202SN1T1G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2202SQ2T2G ONSEMI ncs2200-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2252SN2T1G ONSEMI NC%28S%2CV%292250%2C2.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SOT23-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SOT23-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2252SQ2T2G ONSEMI NC%28S%2CV%292250%2C2.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SC70-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SC70-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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MOC3051SM ONSEMI moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: tube
Number of channels: 1
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GBU8J GBU8J ONSEMI GBU8x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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SZMMSZ24T1G SZMMSZ24T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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SZMMBZ39VCLT1G SZMMBZ39VCLT1G ONSEMI mmbz15vdlt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 0.76A; 40W; double,common cathode; SOT23
Max. forward impulse current: 0.76A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 31.2V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 39V
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FTCO3V85A1 ONSEMI FTCO3V85A1-D.PDF Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 6; -40÷175°C; MOSFET
Type of integrated circuit: power switch
Number of channels: 6
Operating temperature: -40...175°C
Integrated circuit features: MOSFET
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 Мінімальне замовлення: 11 шт
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J109-D26Z J109-D26Z ONSEMI j109-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: bulk
Case: TO92
On-state resistance: 12Ω
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FFSH10120A ONSEMI ffsh10120a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
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FFSH10120A-F085 ONSEMI ffsh10120a-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 17A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
Application: automotive industry
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1SMB5916BT3G 1SMB5916BT3G ONSEMI 1SMB59xxBT3G.PDF description Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.3V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 607 шт:
термін постачання 14-30 дні (днів)
30+15.02 грн
41+10.07 грн
45+9.33 грн
50+8.58 грн
100+8.17 грн
154+6.11 грн
424+5.78 грн
Мінімальне замовлення: 30 шт
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MM3Z4V3T1G MM3Z4V3T1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 18369 шт:
термін постачання 14-30 дні (днів)
33+13.80 грн
50+8.33 грн
78+5.34 грн
100+4.39 грн
200+3.62 грн
500+2.85 грн
784+1.20 грн
2156+1.14 грн
Мінімальне замовлення: 33 шт
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MMSZ5229BT1G MMSZ5229BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 2869 шт:
термін постачання 14-30 дні (днів)
37+12.33 грн
72+5.75 грн
80+5.17 грн
103+4.04 грн
200+3.61 грн
500+3.10 грн
511+1.85 грн
1403+1.75 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
MM3Z4V3ST1G MM3Z4V3ST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
на замовлення 925 шт:
термін постачання 14-30 дні (днів)
36+12.44 грн
47+8.82 грн
55+7.57 грн
100+4.56 грн
445+2.12 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
MMSZ4687T1G MMSZ4687T1G ONSEMI MMSZ4xxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
39+11.69 грн
54+7.70 грн
63+6.57 грн
92+4.52 грн
108+3.85 грн
500+2.64 грн
552+1.71 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
MM3Z4V3B MM3Z4V3B ONSEMI MM3Z9V1B.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
на замовлення 2030 шт:
термін постачання 14-30 дні (днів)
28+16.31 грн
42+9.94 грн
50+8.40 грн
100+4.75 грн
429+2.20 грн
1178+2.08 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
NCV4274ADT50RKG NCV4274ADT50RKG ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV4274AST33T3G NCV4274AST33T3G ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.4A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV4274ADS50R4G NCV4274ADS50R4G ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 400mA; D2PAK; SMD; -40÷150°C; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Input voltage: 5.5...40V
Voltage drop: 0.25V
Operating temperature: -40...150°C
Quiescent current: 250µA
на замовлення 101600 шт:
термін постачання 14-30 дні (днів)
800+47.90 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NCV20061SN3T1G NCV20061SN3T1G ONSEMI ncs2006-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20061SQ3T2G ONSEMI ncs2006-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SC70-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20061SN2T1G NCV20061SN2T1G ONSEMI ncs2006-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20064DR2G ONSEMI ncs2006-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 1.8÷5.5VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20064DTBR2G NCV20064DTBR2G ONSEMI ncs2006-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 1.8÷5.5VDC; TSSOP14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCP43080ADR2G NCP43080ADR2G ONSEMI ncp43080-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NCP43080DDR2G NCP43080DDR2G ONSEMI ncp43080-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NCP43080DMNTWG NCP43080DMNTWG ONSEMI ncp43080-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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NCP43080DMTTWG ONSEMI ncp43080-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCP1611ADR2G NCP1611ADR2G ONSEMI ncp1611-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -500...800mA
Case: SO8
Mounting: SMD
Topology: boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 9...35V DC
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NCP1612ADR2G ONSEMI ncp1612-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -500...800mA
Case: SO10
Mounting: SMD
Topology: boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 9...35V DC
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SBC856BLT1G SBC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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2SC5488A-TL-H ONSEMI 2sc5488a-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.1W; SC81
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.1W
Case: SC81
Current gain: 90...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 8000 шт
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55GN01FA-TL-H ONSEMI 55GN01FA-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.25W
Case: SC81
Current gain: 100...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 3...5.5GHz
Application: automotive industry
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NRVTSA3100ET3G NRVTSA3100ET3G ONSEMI NRVTSA%28F%293100E_Feb2015.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Case: SMA
Max. forward impulse current: 50A
Max. forward voltage: 0.995V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 3 шт
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FGY60T120SWD ONSEMI fgy60t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 105A; 635W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 635W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 174nC
товару немає в наявності
 Мінімальне замовлення: 30 шт
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FGHL60T120RWD ONSEMI fghl60t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 256nC
Kind of package: tube
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NVMFS6H848NWFT1G nvmfs6h848n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 57A; Idm: 308A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 57A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 308A
Gate charge: 16nC
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NVMFS6H852NLWFT1G nvmfs6h852nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 208A
Gate charge: 17nC
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NVMFS6H852NT1G nvmfs6h852n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 13nC
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NVMFS6H852NWFT1G nvmfs6h852n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 13nC
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
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NVMFS6H864NLWFT1G nvmfs6h864nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
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NVMFS6H864NT1G nvmfs6h864n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 92A; 16W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Power dissipation: 16W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 92A
Gate charge: 6.9nC
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MBRA130LT3G MBRA130LT3G.PDF
MBRA130LT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. load current: 2A
Kind of package: reel; tape
на замовлення 923 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+38.48 грн
22+19.48 грн
50+14.77 грн
100+13.04 грн
115+8.17 грн
317+7.76 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
HCPL0600 HCPL0600.pdf
HCPL0600
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
Insulation voltage: 3.75kV
Output voltage: 7V
на замовлення 2740 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+104.87 грн
10+80.88 грн
25+67.67 грн
31+30.54 грн
85+28.88 грн
Мінімальне замовлення: 5 шт
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NVHL020N090SC1 NVHL020N090SC1.PDF
NVHL020N090SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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BAV70 BAV70.pdf
BAV70
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 1.5pF
Max. forward impulse current: 2A
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Мінімальне замовлення: 25 шт
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NCS2211MNTXG ncs2211-d.pdf
NCS2211MNTXG
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; DFN8
Operating temperature: -40...85°C
Output power: 1W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 8Ω
Amplifier class: AB
Kind of package: reel; tape
Case: DFN8
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
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NCS2250SQ2T2G NC%28S%2CV%292250%2C2.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SC70-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SC70-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2211DR2G ncs2211-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.7÷5.5VDC; Ch: 1; Amp.class: AB; 8Ω
Output power: 1W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 8Ω
Amplifier class: AB
Kind of package: reel; tape
Case: SO8-W
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
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NCS2200SN2T1G ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2202SQ1T2G ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2250SN2T1G NC%28S%2CV%292250%2C2.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SOT23-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SOT23-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2200SQ2T2G ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2200AMUT1G
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2200SN1T1G ncs2200-d.pdf
NCS2200SN1T1G
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 0.85÷6V; SMT; SOT23; reel,tape
Operating temperature: -40...105°C
Input offset voltage: 12mV
Type of integrated circuit: comparator
Kind of output: push-pull
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23
Operating voltage: 0.85...6V
Kind of comparator: low-power
Mounting: SMT
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NCS2202SN1T1G ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2202SQ2T2G ncs2200-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SC70-5; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SC70-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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NCS2252SN2T1G NC%28S%2CV%292250%2C2.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SOT23-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SOT23-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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NCS2252SQ2T2G NC%28S%2CV%292250%2C2.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 50ns; 1.8÷5.5V; SMT; SC70-5; reel,tape
Operating temperature: -40...125°C
Input offset voltage: 6mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 20pA
Application: automotive industry
Kind of package: reel; tape
Input offset current: 20pA
Case: SC70-5
Operating voltage: 1.8...5.5V
Delay time: 50ns
Mounting: SMT
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MOC3051SM moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: tube
Number of channels: 1
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GBU8J GBU8x.PDF
GBU8J
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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SZMMSZ24T1G MMSZxxxT1G.PDF
SZMMSZ24T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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SZMMBZ39VCLT1G mmbz15vdlt1-d.pdf
SZMMBZ39VCLT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 0.76A; 40W; double,common cathode; SOT23
Max. forward impulse current: 0.76A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 31.2V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 39V
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FTCO3V85A1 FTCO3V85A1-D.PDF
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 6; -40÷175°C; MOSFET
Type of integrated circuit: power switch
Number of channels: 6
Operating temperature: -40...175°C
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 11 шт
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J109-D26Z j109-d.pdf
J109-D26Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: bulk
Case: TO92
On-state resistance: 12Ω
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FFSH10120A ffsh10120a-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
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FFSH10120A-F085 ffsh10120a-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 17A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Kind of package: tube
Application: automotive industry
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1SMB5916BT3G description 1SMB59xxBT3G.PDF
1SMB5916BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.3V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 607 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.02 грн
41+10.07 грн
45+9.33 грн
50+8.58 грн
100+8.17 грн
154+6.11 грн
424+5.78 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
MM3Z4V3T1G MM3ZxxT1G.PDF
MM3Z4V3T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 18369 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
33+13.80 грн
50+8.33 грн
78+5.34 грн
100+4.39 грн
200+3.62 грн
500+2.85 грн
784+1.20 грн
2156+1.14 грн
Мінімальне замовлення: 33 шт
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MMSZ5229BT1G MMSZ52xxT1G.PDF
MMSZ5229BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 2869 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
37+12.33 грн
72+5.75 грн
80+5.17 грн
103+4.04 грн
200+3.61 грн
500+3.10 грн
511+1.85 грн
1403+1.75 грн
Мінімальне замовлення: 37 шт
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MM3Z4V3ST1G MM3ZxxST1G.PDF
MM3Z4V3ST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
на замовлення 925 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.44 грн
47+8.82 грн
55+7.57 грн
100+4.56 грн
445+2.12 грн
Мінімальне замовлення: 36 шт
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MMSZ4687T1G MMSZ4xxxT1G.PDF
MMSZ4687T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.69 грн
54+7.70 грн
63+6.57 грн
92+4.52 грн
108+3.85 грн
500+2.64 грн
552+1.71 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
MM3Z4V3B MM3Z9V1B.PDF
MM3Z4V3B
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
на замовлення 2030 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.31 грн
42+9.94 грн
50+8.40 грн
100+4.75 грн
429+2.20 грн
1178+2.08 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
NCV4274ADT50RKG ncv4274-d.pdf
NCV4274ADT50RKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV4274AST33T3G ncv4274-d.pdf
NCV4274AST33T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.4A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV4274ADS50R4G ncv4274-d.pdf
NCV4274ADS50R4G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 400mA; D2PAK; SMD; -40÷150°C; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Input voltage: 5.5...40V
Voltage drop: 0.25V
Operating temperature: -40...150°C
Quiescent current: 250µA
на замовлення 101600 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
800+47.90 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NCV20061SN3T1G ncs2006-d.pdf
NCV20061SN3T1G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20061SQ3T2G ncs2006-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SC70-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20061SN2T1G ncs2006-d.pdf
NCV20061SN2T1G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20064DR2G ncs2006-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 1.8÷5.5VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCV20064DTBR2G ncs2006-d.pdf
NCV20064DTBR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 1.8÷5.5VDC; TSSOP14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
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NCP43080ADR2G ncp43080-d.pdf
NCP43080ADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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Мінімальне замовлення: 2500 шт
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NCP43080DDR2G ncp43080-d.pdf
NCP43080DDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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Мінімальне замовлення: 2500 шт
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NCP43080DMNTWG ncp43080-d.pdf
NCP43080DMNTWG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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Мінімальне замовлення: 4000 шт
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NCP43080DMTTWG ncp43080-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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Мінімальне замовлення: 3000 шт
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NCP1611ADR2G ncp1611-d.pdf
NCP1611ADR2G
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -500...800mA
Case: SO8
Mounting: SMD
Topology: boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 9...35V DC
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NCP1612ADR2G ncp1612-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷35VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -500...800mA
Case: SO10
Mounting: SMD
Topology: boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 9...35V DC
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SBC856BLT1G BC856_7_8.PDF
SBC856BLT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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2SC5488A-TL-H 2sc5488a-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.1W; SC81
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.1W
Case: SC81
Current gain: 90...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Application: automotive industry
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Мінімальне замовлення: 8000 шт
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55GN01FA-TL-H 55GN01FA-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.25W
Case: SC81
Current gain: 100...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 3...5.5GHz
Application: automotive industry
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NRVTSA3100ET3G NRVTSA%28F%293100E_Feb2015.pdf
NRVTSA3100ET3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Case: SMA
Max. forward impulse current: 50A
Max. forward voltage: 0.995V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
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Мінімальне замовлення: 3 шт
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FGY60T120SWD fgy60t120swd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 105A; 635W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 635W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 174nC
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Мінімальне замовлення: 30 шт
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FGHL60T120RWD fghl60t120rwd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 256nC
Kind of package: tube
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