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BDW42G BDW42G ONSEMI BDW42-D.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 15A; 85W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
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1N5358BG 1N5358BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NRVHP620MFDT3G ONSEMI nhp620mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 25ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
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NRVHP820MFDT3G ONSEMI nhp820mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
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NRVHP420MFDT1G ONSEMI nhp420mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 40ns
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
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NRVHP620MFDT1G ONSEMI nhp620mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 25ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
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NRVHP820MFDT1G ONSEMI nhp820mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
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NCN6001DTBR2G NCN6001DTBR2G ONSEMI ncn6001-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: card inerface
Supply voltage: 2.7...5.5V DC
Case: TSSOP20
Operating temperature: -25...85°C
Mounting: SMD
Kind of package: reel; tape
Application: for smart card application
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MUR220G ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR220RLG ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
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1N4149TR 1N4149TR ONSEMI 1N4149.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 8723 шт:
термін постачання 21-30 дні (днів)
59+7.06 грн
114+3.37 грн
250+2.17 грн
500+1.92 грн
852+1.06 грн
2343+1.00 грн
Мінімальне замовлення: 59
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NST45010MW6T1G NST45010MW6T1G ONSEMI nst45010mw6-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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GBPC2501 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Version: square
Max. forward impulse current: 0.3kA
Leads: connectors FASTON
Kind of package: bulk
Electrical mounting: THT
Case: GBPC
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 25A
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NCP1654BD65R2G NCP1654BD65R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1654BD200R2G NCP1654BD200R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MUN5111T1G MUN5111T1G ONSEMI dta114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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SMUN5111T1G SMUN5111T1G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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1N5373BG 1N5373BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5373BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NRVBM130LT1G ONSEMI mbrm130l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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FDS4435BZ FDS4435BZ ONSEMI FDS4435BZ.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1894 шт:
термін постачання 21-30 дні (днів)
7+63.55 грн
11+37.70 грн
38+24.22 грн
100+22.91 грн
250+22.07 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP1605BDR2G NCP1605BDR2G ONSEMI ncp1605-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9÷20VDC; SO16; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: 0...125°C
Case: SO16
Frequency: 250kHz
Topology: boost
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FDD8896 FDD8896 ONSEMI FDD,FDU8896.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1211 шт:
термін постачання 21-30 дні (днів)
5+100.68 грн
10+61.84 грн
23+39.31 грн
63+37.17 грн
500+35.71 грн
Мінімальне замовлення: 5
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FAN7171MX-F085 ONSEMI fan7171_f085-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+104.81 грн
Мінімальне замовлення: 2500
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NCP1565MNTXG ONSEMI ONSM-S-A0001407785-1.pdf?t.download=true&u=5oefqw ncp1565-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Output current: -2...3A
Topology: forward
Operating voltage: 6.5...20V DC
Frequency: 0.1...1.5MHz
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NCP1566MNTXG ONSEMI ncp1566-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Output current: -2...3A
Topology: forward
Operating voltage: 6.5...20V DC
Frequency: 0.1...1MHz
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H11L1M H11L1M ONSEMI H11L1.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Turn-on time: 650ns
Transfer rate: 1Mbps
Slew rate: 5.3kV/μs
Turn-off time: 1.2µs
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SS19 SS19 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
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SS19FA ONSEMI s110fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 1A; reel,tape
Case: SOD123F
Max. forward voltage: 0.8V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
24+16.63 грн
100+10.96 грн
114+7.89 грн
313+7.43 грн
1000+7.20 грн
Мінімальне замовлення: 17
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SZMMBZ9V1ALT3G SZMMBZ9V1ALT3G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 25W; double,common anode; SOT23; ±5%
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 25W
Mounting: SMD
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MMBZ5257BLT1G MMBZ5257BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
на замовлення 35673 шт:
термін постачання 21-30 дні (днів)
56+7.45 грн
95+4.06 грн
131+2.93 грн
152+2.53 грн
584+1.54 грн
1000+1.48 грн
1500+1.40 грн
1605+1.39 грн
Мінімальне замовлення: 56
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SZMMBZ5257BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
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SZMMBZ5257ELT1G ONSEMI MMBZ52xxELT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
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NCP699SN18T1G NCP699SN18T1G ONSEMI ncp699-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.62V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
Manufacturer series: NCP699
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
9+47.87 грн
15+27.36 грн
25+22.22 грн
80+11.34 грн
218+10.73 грн
1000+10.42 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDS6690A FDS6690A ONSEMI FDS6690A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
8+52.82 грн
33+27.43 грн
50+27.36 грн
91+25.90 грн
Мінімальне замовлення: 8
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SMS12T1G SMS12T1G ONSEMI sms05t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; SC74-6; Ch: 4
Type of diode: TVS array
Case: SC74-6
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Kind of package: reel; tape
Breakdown voltage: 13.3...15V
Number of channels: 4
Version: ESD
Peak pulse power dissipation: 0.35kW
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
24+17.33 грн
30+13.03 грн
100+11.72 грн
101+8.97 грн
276+8.51 грн
Мінімальне замовлення: 24
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SMS15T1G ONSEMI sms05t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7÷18.5V; 12A; 350W; common anode; SC74-6; Ch: 4
Type of diode: TVS array
Case: SC74-6
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: common anode
Max. forward impulse current: 12A
Kind of package: reel; tape
Breakdown voltage: 16.7...18.5V
Number of channels: 4
Version: ESD
Peak pulse power dissipation: 0.35kW
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SMS15CT1G ONSEMI sms05c-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 17÷19V; 12A; 350W; common anode; TSOP6; Ch: 5; ESD
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: common anode
Max. forward impulse current: 12A
Kind of package: reel; tape
Breakdown voltage: 17...19V
Number of channels: 5
Version: ESD
Peak pulse power dissipation: 0.35kW
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NUP4060AXV6T1G ONSEMI nup4060axv6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; unidirectional; SOT563; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.8V
Kind of package: reel; tape
Type of diode: TVS array
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SZNUP3105LT1G ONSEMI nup3105l-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)
11+40.44 грн
14+28.43 грн
25+18.32 грн
69+13.03 грн
189+12.34 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NRVUD320VT4G ONSEMI murd320-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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FSA1208BQX ONSEMI FAIR-S-A0000182670-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Supply voltage: 2.3...4.3V DC
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 8
Quiescent current: 1µA
Kind of output: 8PST-NO
Kind of package: reel; tape
Technology: CMOS; TTL
Mounting: SMD
Case: MLP20
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SZ1SMA5931BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FDA032N08 FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
2+366.43 грн
5+199.25 грн
13+188.52 грн
Мінімальне замовлення: 2
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FGY160T65SPD-F085 ONSEMI fgy160t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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NCP13992AADR2G NCP13992AADR2G ONSEMI ncp13992-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992ACDR2G NCP13992ACDR2G ONSEMI ncp13992-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992ADDR2G NCP13992ADDR2G ONSEMI ncp13992-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992AFDR2G NCP13992AFDR2G ONSEMI ncp13992-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992AHDR2G NCP13992AHDR2G ONSEMI ncp13992-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AADR2G NCP1399AADR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AFDR2G NCP1399AFDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AGDR2G NCP1399AGDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AHDR2G NCP1399AHDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AIDR2G NCP1399AIDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AMDR2G NCP1399AMDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399ANDR2G NCP1399ANDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399APDR2G NCP1399APDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399ARDR2G NCP1399ARDR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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BDW42G BDW42-D.pdf
BDW42G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 15A; 85W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 85W
Case: TO220AB
Mounting: THT
Kind of package: tube
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1N5358BG 1N53xx.PDF
1N5358BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG description 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NRVHP620MFDT3G nhp620mfd-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 25ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
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NRVHP820MFDT3G nhp820mfd-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
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NRVHP420MFDT1G nhp420mfd-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 40ns
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
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NRVHP620MFDT1G nhp620mfd-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 25ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
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NRVHP820MFDT1G nhp820mfd-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Case: DFN8
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
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NCN6001DTBR2G ncn6001-d.pdf
NCN6001DTBR2G
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: card inerface
Supply voltage: 2.7...5.5V DC
Case: TSSOP20
Operating temperature: -25...85°C
Mounting: SMD
Kind of package: reel; tape
Application: for smart card application
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MUR220G mur220-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR220RLG mur220-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
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1N4149TR 1N4149.pdf
1N4149TR
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 8723 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
59+7.06 грн
114+3.37 грн
250+2.17 грн
500+1.92 грн
852+1.06 грн
2343+1.00 грн
Мінімальне замовлення: 59
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NST45010MW6T1G nst45010mw6-d.pdf
NST45010MW6T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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GBPC2501 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Version: square
Max. forward impulse current: 0.3kA
Leads: connectors FASTON
Kind of package: bulk
Electrical mounting: THT
Case: GBPC
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 25A
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NCP1654BD65R2G ncp1654-d.pdf
NCP1654BD65R2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1654BD200R2G ncp1654-d.pdf
NCP1654BD200R2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MUN5111T1G dta114e-d.pdf
MUN5111T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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SMUN5111T1G dta114e-d.pdf
SMUN5111T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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1N5373BG 1N53xx.PDF
1N5373BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5373BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NRVBM130LT1G mbrm130l-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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FDS4435BZ description FDS4435BZ.pdf
FDS4435BZ
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1894 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.55 грн
11+37.70 грн
38+24.22 грн
100+22.91 грн
250+22.07 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP1605BDR2G ncp1605-d.pdf
NCP1605BDR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9÷20VDC; SO16; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: 0...125°C
Case: SO16
Frequency: 250kHz
Topology: boost
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FDD8896 FDD,FDU8896.pdf
FDD8896
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.68 грн
10+61.84 грн
23+39.31 грн
63+37.17 грн
500+35.71 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FAN7171MX-F085 fan7171_f085-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+104.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP1565MNTXG ONSM-S-A0001407785-1.pdf?t.download=true&u=5oefqw ncp1565-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Output current: -2...3A
Topology: forward
Operating voltage: 6.5...20V DC
Frequency: 0.1...1.5MHz
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NCP1566MNTXG ncp1566-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Output current: -2...3A
Topology: forward
Operating voltage: 6.5...20V DC
Frequency: 0.1...1MHz
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H11L1M H11L1.pdf
H11L1M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Turn-on time: 650ns
Transfer rate: 1Mbps
Slew rate: 5.3kV/μs
Turn-off time: 1.2µs
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SS19 SSxx.pdf
SS19
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
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SS19FA s110fa-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 1A; reel,tape
Case: SOD123F
Max. forward voltage: 0.8V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
24+16.63 грн
100+10.96 грн
114+7.89 грн
313+7.43 грн
1000+7.20 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SZMMBZ9V1ALT3G MMBZ_ser.PDF
SZMMBZ9V1ALT3G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 25W; double,common anode; SOT23; ±5%
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 25W
Mounting: SMD
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MMBZ5257BLT1G MMBZ52xxBLT1G.PDF
MMBZ5257BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
на замовлення 35673 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.45 грн
95+4.06 грн
131+2.93 грн
152+2.53 грн
584+1.54 грн
1000+1.48 грн
1500+1.40 грн
1605+1.39 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SZMMBZ5257BLT1G MMBZ52xxBLT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Leakage current: 0.1µA
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SZMMBZ5257ELT1G MMBZ52xxELT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
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NCP699SN18T1G ncp699-d.pdf
NCP699SN18T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.62V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
Manufacturer series: NCP699
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.87 грн
15+27.36 грн
25+22.22 грн
80+11.34 грн
218+10.73 грн
1000+10.42 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDS6690A FDS6690A.pdf
FDS6690A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+52.82 грн
33+27.43 грн
50+27.36 грн
91+25.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMS12T1G sms05t1-d.pdf
SMS12T1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 15A; 350W; common anode; SC74-6; Ch: 4
Type of diode: TVS array
Case: SC74-6
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Kind of package: reel; tape
Breakdown voltage: 13.3...15V
Number of channels: 4
Version: ESD
Peak pulse power dissipation: 0.35kW
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.33 грн
30+13.03 грн
100+11.72 грн
101+8.97 грн
276+8.51 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMS15T1G sms05t1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7÷18.5V; 12A; 350W; common anode; SC74-6; Ch: 4
Type of diode: TVS array
Case: SC74-6
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: common anode
Max. forward impulse current: 12A
Kind of package: reel; tape
Breakdown voltage: 16.7...18.5V
Number of channels: 4
Version: ESD
Peak pulse power dissipation: 0.35kW
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SMS15CT1G sms05c-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 17÷19V; 12A; 350W; common anode; TSOP6; Ch: 5; ESD
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: common anode
Max. forward impulse current: 12A
Kind of package: reel; tape
Breakdown voltage: 17...19V
Number of channels: 5
Version: ESD
Peak pulse power dissipation: 0.35kW
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NUP4060AXV6T1G nup4060axv6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; unidirectional; SOT563; Ch: 4; reel,tape
Number of channels: 4
Mounting: SMD
Case: SOT563
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 6.8V
Kind of package: reel; tape
Type of diode: TVS array
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SZNUP3105LT1G nup3105l-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.44 грн
14+28.43 грн
25+18.32 грн
69+13.03 грн
189+12.34 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NRVUD320VT4G murd320-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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FSA1208BQX FAIR-S-A0000182670-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Supply voltage: 2.3...4.3V DC
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 8
Quiescent current: 1µA
Kind of output: 8PST-NO
Kind of package: reel; tape
Technology: CMOS; TTL
Mounting: SMD
Case: MLP20
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SZ1SMA5931BT3G 1SMA59xxBT3.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FDA032N08 fda032n08-d.pdf
FDA032N08
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+366.43 грн
5+199.25 грн
13+188.52 грн
Мінімальне замовлення: 2
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FGY160T65SPD-F085 fgy160t65spd-f085-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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NCP13992AADR2G ncp13992-d.pdf
NCP13992AADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992ACDR2G ncp13992-d.pdf
NCP13992ACDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992ADDR2G ncp13992-d.pdf
NCP13992ADDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992AFDR2G ncp13992-d.pdf
NCP13992AFDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP13992AHDR2G ncp13992-d.pdf
NCP13992AHDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AADR2G ncp1399-d.pdf
NCP1399AADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AFDR2G ncp1399-d.pdf
NCP1399AFDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AGDR2G ncp1399-d.pdf
NCP1399AGDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NCP1399AHDR2G ncp1399-d.pdf
NCP1399AHDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP1399AIDR2G ncp1399-d.pdf
NCP1399AIDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP1399AMDR2G ncp1399-d.pdf
NCP1399AMDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP1399ANDR2G ncp1399-d.pdf
NCP1399ANDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP1399APDR2G ncp1399-d.pdf
NCP1399APDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
NCP1399ARDR2G ncp1399-d.pdf
NCP1399ARDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
товару немає в наявності
В кошику  од. на суму  грн.
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