Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQU2N100TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMC8030 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8 Mounting: SMD Case: WDFN8 Drain-source voltage: 40V On-state resistance: 16mΩ Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Power dissipation: 14W Type of transistor: N-MOSFET Drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVTS1045EMFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVTS1045EMFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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6N137M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns Slew rate: 2.5kV/μs CTR@If: 19-50%@16mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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H11F3M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
на замовлення 855 шт: термін постачання 21-30 дні (днів) |
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FCB110N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 105A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJF15030G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Mounting: THT Collector-emitter voltage: 150V Current gain: 40 Collector current: 8A Type of transistor: NPN Power dissipation: 36W Polarisation: bipolar Kind of package: tube Case: TO220FP Frequency: 30MHz |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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MJF15031G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Case: TO220FP Frequency: 30MHz Collector-emitter voltage: 150V Current gain: 40 Collector current: 8A Type of transistor: PNP Power dissipation: 36W Polarisation: bipolar Kind of package: tube Mounting: THT |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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MOC3063M | ONSEMI |
![]() Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M Manufacturer series: MOC3063M Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Type of optocoupler: optotriac Case: DIP6 Mounting: THT |
на замовлення 1027 шт: термін постачання 21-30 дні (днів) |
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S210 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S210FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SOD123F Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTS2101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 0.29W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS5351 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8 Case: SO8 Drain-source voltage: 60V Drain current: 6.1A On-state resistance: 58.8mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 3468 шт: термін постачання 21-30 дні (днів) |
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MMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 15V Current gain: 40...120 Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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MUN5131DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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NCP1606ADR2G | ONSEMI |
![]() Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1606BDR2G | ONSEMI |
![]() Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC20ADG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: tube Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC20ADR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC20ADTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMF12CT1G | ONSEMI |
![]() Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD Type of diode: TVS array Breakdown voltage: 13.3...15V Semiconductor structure: common anode Mounting: SMD Case: SC88 Max. off-state voltage: 12V Number of channels: 5 Kind of package: reel; tape Max. forward impulse current: 6A Leakage current: 0.1µA Version: ESD Peak pulse power dissipation: 0.1kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SZSMF12CT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape Type of diode: TVS array Breakdown voltage: 6.2...7.2V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5V Number of channels: 5 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBT3904DW1T3G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Frequency: 300MHz Collector-emitter voltage: 40V Current gain: 100...300 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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GBPC1202 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 12A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FODM8061 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: Mini-flat 4pin Slew rate: 40kV/μs |
на замовлення 1867 шт: термін постачання 21-30 дні (днів) |
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FODM8061R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 10Mbps Case: MFP5 Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...7.5V Manufacturer series: FODM8061 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDV305N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Drain-source voltage: 20V Drain current: 0.9A On-state resistance: 303mΩ Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SOT23 |
на замовлення 3199 шт: термін постачання 21-30 дні (днів) |
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1N4148-T26A | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns Type of diode: switching Case: DO35 Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Reverse recovery time: 4ns Kind of package: Ammo Pack Features of semiconductor devices: small signal Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N3595TR | ONSEMI |
![]() Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
на замовлення 5359 шт: термін постачання 21-30 дні (днів) |
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FXMA108BQX | ONSEMI |
![]() Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 8 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: DQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Number of outputs: 8 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP1607BDR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDH300A | ONSEMI |
![]() Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35 Mounting: THT Case: DO35 Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Kind of package: bulk Type of diode: switching Features of semiconductor devices: small signal |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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ES1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Leakage current: 0.1mA Kind of package: reel; tape Max. forward impulse current: 30A Capacitance: 10pF Power dissipation: 1.47W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJ11033G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3 Case: TO3 Collector-emitter voltage: 120V Collector current: 50A Type of transistor: PNP Power dissipation: 300W Polarisation: bipolar Kind of package: in-tray Kind of transistor: Darlington Mounting: THT |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT245ADWG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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74VHCT245AMTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHCT245ADTG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74VHCT245ADTRG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHCT245ADWRG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVB1H100SFT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 |
на замовлення 554 шт: термін постачання 21-30 дні (днів) |
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SMUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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SMUN5211T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS34 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W Mounting: SMD Case: SMC Max. off-state voltage: 40V Max. forward voltage: 0.5V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Power dissipation: 2.27W Kind of package: reel; tape Type of diode: Schottky rectifying |
на замовлення 4239 шт: термін постачання 21-30 дні (днів) |
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MM3Z3V9ST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 1187 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z3V9ST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR1100G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.79V Max. forward impulse current: 50A Kind of package: bulk Max. load current: 2A |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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MBR1100RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FGD3440G2-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMUN2114LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMMUN2114LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC374MTC | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC374MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC374MX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC374DTR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2.2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74VHC374DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; VHC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CPH3910-TL-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.4W Case: CPH3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FODM121A | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor CTR@If: 100-300%@5mA Case: Mini-flat 4pin Manufacturer series: FODM121 Turn-off time: 3µs Turn-on time: 3µs |
на замовлення 2624 шт: термін постачання 21-30 дні (днів) |
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FQU2N100TU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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од. на суму грн.
FDMC8030 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: 40V
On-state resistance: 16mΩ
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Power dissipation: 14W
Type of transistor: N-MOSFET
Drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: 40V
On-state resistance: 16mΩ
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Power dissipation: 14W
Type of transistor: N-MOSFET
Drain current: 12A
товару немає в наявності
В кошику
од. на суму грн.
NRVTS1045EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
NRVTS1045EMFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
6N137M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
CTR@If: 19-50%@16mA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
CTR@If: 19-50%@16mA
товару немає в наявності
В кошику
од. на суму грн.
H11F3M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 855 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 282.47 грн |
6+ | 170.83 грн |
15+ | 161.76 грн |
100+ | 158.74 грн |
500+ | 154.96 грн |
FCB110N65F |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
товару немає в наявності
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од. на суму грн.
MJF15030G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
на замовлення 112 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.20 грн |
10+ | 80.13 грн |
15+ | 61.98 грн |
40+ | 58.96 грн |
MJF15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Case: TO220FP
Frequency: 30MHz
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: PNP
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Case: TO220FP
Frequency: 30MHz
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: PNP
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
на замовлення 74 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.27 грн |
10+ | 92.22 грн |
11+ | 88.44 грн |
28+ | 83.15 грн |
50+ | 80.88 грн |
MOC3063M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Manufacturer series: MOC3063M
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
Case: DIP6
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Manufacturer series: MOC3063M
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
Case: DIP6
Mounting: THT
на замовлення 1027 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.05 грн |
10+ | 40.97 грн |
28+ | 31.67 грн |
77+ | 30.01 грн |
500+ | 29.48 грн |
1000+ | 28.80 грн |
S210 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
S210FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
NTS2101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
товару немає в наявності
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од. на суму грн.
FDS5351 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 79 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 68.38 грн |
10+ | 47.09 грн |
34+ | 26.68 грн |
NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 3468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.24 грн |
25+ | 15.12 грн |
33+ | 11.64 грн |
100+ | 8.01 грн |
130+ | 6.88 грн |
358+ | 6.50 грн |
500+ | 6.27 грн |
MMBT2369ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 15V
Current gain: 40...120
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 15V
Current gain: 40...120
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.40 грн |
61+ | 6.20 грн |
78+ | 4.90 грн |
91+ | 4.16 грн |
101+ | 3.76 грн |
108+ | 3.51 грн |
MUN5131DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 770 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.50 грн |
200+ | 1.93 грн |
500+ | 1.71 грн |
595+ | 1.50 грн |
NCP1606ADR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1606BDR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MC74HC20ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC20ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC20ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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SMF12CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 6A
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.1kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 6A
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.1kW
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SZSMF12CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
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MBT3904DW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.49 грн |
105+ | 3.63 грн |
140+ | 2.71 грн |
500+ | 2.04 грн |
636+ | 1.41 грн |
1748+ | 1.33 грн |
GBPC1202 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 12A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FODM8061 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
на замовлення 1867 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 225.49 грн |
5+ | 142.11 грн |
8+ | 120.19 грн |
21+ | 113.38 грн |
100+ | 109.61 грн |
FODM8061R2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7.5V
Manufacturer series: FODM8061
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7.5V
Manufacturer series: FODM8061
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FDV305N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Drain-source voltage: 20V
Drain current: 0.9A
On-state resistance: 303mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Drain-source voltage: 20V
Drain current: 0.9A
On-state resistance: 303mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
на замовлення 3199 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.68 грн |
22+ | 17.54 грн |
26+ | 14.82 грн |
50+ | 10.36 грн |
100+ | 9.00 грн |
122+ | 7.26 грн |
335+ | 6.88 грн |
1N4148-T26A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Case: DO35
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Kind of package: Ammo Pack
Features of semiconductor devices: small signal
Mounting: THT
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Case: DO35
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Kind of package: Ammo Pack
Features of semiconductor devices: small signal
Mounting: THT
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1N3595TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
на замовлення 5359 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.14 грн |
66+ | 5.74 грн |
100+ | 3.87 грн |
400+ | 2.21 грн |
1098+ | 2.09 грн |
FXMA108BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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NCP1607BDR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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FDH300A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
43+ | 8.92 грн |
56+ | 6.83 грн |
100+ | 4.86 грн |
377+ | 2.34 грн |
1037+ | 2.21 грн |
ES1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
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MJ11033G | ![]() |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Case: TO3
Collector-emitter voltage: 120V
Collector current: 50A
Type of transistor: PNP
Power dissipation: 300W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Case: TO3
Collector-emitter voltage: 120V
Collector current: 50A
Type of transistor: PNP
Power dissipation: 300W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Mounting: THT
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1113.61 грн |
2+ | 826.20 грн |
3+ | 780.84 грн |
25+ | 750.61 грн |
MC74VHCT245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 133.50 грн |
10+ | 76.12 грн |
20+ | 45.43 грн |
74VHCT245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Operating temperature: -40...85°C
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MC74VHCT245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
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MC74VHCT245ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS
Operating temperature: -40...85°C
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MC74VHCT245ADWRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
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NRVB1H100SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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MUN5211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
на замовлення 554 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.58 грн |
61+ | 6.27 грн |
100+ | 3.83 грн |
500+ | 2.79 грн |
535+ | 1.66 грн |
SMUN5211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.02 грн |
38+ | 9.83 грн |
SMUN5211T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SS34 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
на замовлення 4239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.26 грн |
16+ | 25.10 грн |
47+ | 19.05 грн |
129+ | 17.99 грн |
250+ | 17.23 грн |
MM3Z3V9ST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1187 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.35 грн |
91+ | 4.16 грн |
132+ | 2.87 грн |
154+ | 2.46 грн |
645+ | 1.37 грн |
SZMM3Z3V9ST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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MBR1100G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Kind of package: bulk
Max. load current: 2A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Kind of package: bulk
Max. load current: 2A
на замовлення 737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.75 грн |
19+ | 19.96 грн |
80+ | 11.11 грн |
219+ | 10.51 грн |
MBR1100RLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
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FGD3440G2-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
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MMUN2114LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SMMUN2114LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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74VHC374MTC |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
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74VHC374MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
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74VHC374MX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
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MC74VHC374DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2.2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
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MC74VHC374DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; VHC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; VHC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
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CPH3910-TL-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FODM121A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
CTR@If: 100-300%@5mA
Case: Mini-flat 4pin
Manufacturer series: FODM121
Turn-off time: 3µs
Turn-on time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
CTR@If: 100-300%@5mA
Case: Mini-flat 4pin
Manufacturer series: FODM121
Turn-off time: 3µs
Turn-on time: 3µs
на замовлення 2624 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.33 грн |
15+ | 26.38 грн |
49+ | 18.22 грн |
134+ | 17.23 грн |
500+ | 16.55 грн |