Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC14025BDG | ONSEMI |
![]() ![]() Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: tube Kind of gate: NOR Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 3 Supply voltage: 3...18V DC |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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GBU4M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FCA20N60-F109 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 75nC Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCMT360N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Mounting: SMD Case: PQFN4 Drain-source voltage: 650V Drain current: 10A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCW30LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 215...500 Mounting: SMD Kind of package: reel; tape |
на замовлення 5515 шт: термін постачання 21-30 дні (днів) |
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SBCW30LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 215...500 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDD5N50NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Pulsed drain current: 16A Power dissipation: 62W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FJPF2145TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 5A Power dissipation: 40W Case: TO220FP Current gain: 20...40 Mounting: THT Kind of package: tube Frequency: 15MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
LM2575D2T-ADJR4G | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
LM2575D2T-ADJG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FL7760AM6X | ONSEMI |
![]() Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Case: SOT23-6 Output current: -2.5...1.5A Number of channels: 1 Mounting: SMD Input voltage: 8...70V Application: for LED applications Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Topology: buck Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MMBFJ175 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 7mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 125Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
J176-D74Z | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: THT Kind of package: Ammo Pack Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14007UBDG | ONSEMI |
![]() Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Mounting: SMD Case: SO14 Kind of package: tube Type of integrated circuit: digital Number of channels: dual; 2 Quiescent current: 30µA Kind of gate: combination; NOT Technology: CMOS Kind of integrated circuit: complementary pair Operating temperature: -55...125°C Supply voltage: 3...18V DC |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
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NTHL160N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Mounting: THT Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Kind of package: tube Gate charge: 34nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -15...25V Pulsed drain current: 69A Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NCP170AMX150TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD Output voltage: 1.5V Output current: 0.15A Manufacturer series: NCP170 Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Number of channels: 1 Tolerance: ±1% Input voltage: 2.2...5.5V Case: XDFN4 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP170ASN150T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD Output voltage: 1.5V Output current: 0.15A Manufacturer series: NCP170 Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Number of channels: 1 Tolerance: ±1% Input voltage: 2.2...5.5V Case: TSOP5 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCD1300N80Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 12A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 16.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LVX132MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: quad; 4 Quiescent current: 20µA Kind of input: with Schmitt trigger Kind of gate: NAND Family: LVX Number of inputs: 2 Supply voltage: 2...3.6V DC |
на замовлення 734 шт: термін постачання 21-30 дні (днів) |
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74LVX132MX | ONSEMI |
![]() ![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: SO14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: quad; 4 Quiescent current: 20µA Kind of input: with Schmitt trigger Kind of gate: NAND Family: LVX Number of inputs: 2 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NSPU5132MUTBG | ONSEMI |
![]() Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 13.5V Semiconductor structure: unidirectional Breakdown voltage: 15.5V Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCV21872DMR2G | ONSEMI |
![]() Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 270kHz Mounting: SMT Case: Micro8 Slew rate: 0.1V/μs Operating temperature: -40...125°C Input offset voltage: 0.045mV Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA Number of channels: dual |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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TIP42AG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Collector-emitter voltage: 60V Current gain: 15...75 Collector current: 6A Type of transistor: PNP Power dissipation: 65W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220AB Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCD5N60TM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 13.8A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDBL0110N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU8B | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC858CLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2452 шт: термін постачання 21-30 дні (днів) |
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BC858CDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BC858BLT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NCP1076AAP100G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating voltage: 6.5...20V DC Frequency: 90...110kHz On-state resistance: 6.9Ω Output current: 0.65A Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...125°C Case: DIP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP1079BAP130G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating voltage: 6.5...20V DC Frequency: 117...143kHz On-state resistance: 3.9Ω Output current: 1.05A Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...125°C Case: DIP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MRA4007T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 1kV Max. load current: 30A Max. forward voltage: 1.18V Load current: 1A Semiconductor structure: single diode |
на замовлення 2713 шт: термін постачання 21-30 дні (днів) |
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NRVA4007T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Max. load current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14007UBDR2G | ONSEMI |
![]() Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Mounting: SMD Case: SO14 Kind of package: reel; tape Type of integrated circuit: digital Number of channels: dual; 2 Quiescent current: 30µA Kind of gate: combination; NOT Technology: CMOS Kind of integrated circuit: complementary pair Operating temperature: -55...125°C Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDBL0210N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDB0170N607L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1620A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDS4675 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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FQD7P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.42A Power dissipation: 28W Case: DPAK Gate-source voltage: ±25V On-state resistance: 451mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS29 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.2A Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward voltage: 1V Max. load current: 0.25A |
на замовлення 2604 шт: термін постачання 21-30 дні (днів) |
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US1AFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape Type of diode: rectifying Case: SOD123F Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSD560YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Collector-emitter voltage: 100V Collector current: 5A Type of transistor: NPN Power dissipation: 1.5W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8406ASTT1G | ONSEMI |
![]() Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC Application: automotive industry Kind of integrated circuit: low-side |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
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MMBZ5229BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA Semiconductor structure: single diode Zener voltage: 4.3V Leakage current: 5µA Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G Mounting: SMD Case: SOT23 Tolerance: ±5% |
на замовлення 5975 шт: термін постачання 21-30 дні (днів) |
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FDS4672A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
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FDS6576 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS10P02R2G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX08M | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX08MTCX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Quiescent current: 10µA |
на замовлення 1449 шт: термін постачання 21-30 дні (днів) |
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74LCX08MX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
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MBR30170MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 170V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. forward impulse current: 540A Kind of package: reel; tape |
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NTBG040N120M3S | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Power dissipation: 131W Polarisation: unipolar Gate charge: 75nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 149A Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 80mΩ |
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NLSV1T34MUTBG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: uDFN6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
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NLSV1T34AMUTCG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: uDFN6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
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NLSV1T34AMX1TCG | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: ULLGA6 Number of inputs: 1 Number of outputs: 1 Supply voltage: 0.9...4.5V DC Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
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NLVSV1T34DFT2G | ONSEMI |
![]() Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Operating temperature: -40...85°C Case: SC88A Supply voltage: 0.9...4.5V DC Number of channels: 1 Quiescent current: 4µA Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD |
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NSR02100HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
NSVR02100HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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MMBZ5231BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA Mounting: SMD Case: SOT23 Semiconductor structure: single diode Zener voltage: 5.1V Leakage current: 5µA Tolerance: ±5% Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G |
на замовлення 783 шт: термін постачання 21-30 дні (днів) |
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MJF122G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP Mounting: THT Case: TO220FP Collector-emitter voltage: 100V Collector current: 5A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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1N5252B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: 1N52xxB |
на замовлення 4971 шт: термін постачання 21-30 дні (днів) |
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MC14025BDG | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.15 грн |
11+ | 37.78 грн |
25+ | 29.89 грн |
41+ | 22.45 грн |
110+ | 21.92 грн |
111+ | 21.23 грн |
GBU4M |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FCA20N60-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
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FCMT360N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Mounting: SMD
Case: PQFN4
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Mounting: SMD
Case: PQFN4
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
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BCW30LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 5515 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.38 грн |
59+ | 6.51 грн |
85+ | 4.52 грн |
100+ | 3.89 грн |
372+ | 2.42 грн |
1000+ | 2.31 грн |
1023+ | 2.29 грн |
3000+ | 2.21 грн |
SBCW30LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDD5N50NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FJPF2145TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
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LM2575D2T-ADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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LM2575D2T-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
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FL7760AM6X |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
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MMBFJ175 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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J176-D74Z |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
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MC14007UBDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
на замовлення 129 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
15+ | 26.90 грн |
46+ | 20.00 грн |
110+ | 19.16 грн |
124+ | 18.93 грн |
NTHL160N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
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NCP170AMX150TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
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NCP170ASN150T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
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FCD1300N80Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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74LVX132MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
на замовлення 734 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.74 грн |
16+ | 24.98 грн |
25+ | 20.61 грн |
54+ | 16.71 грн |
100+ | 15.71 грн |
250+ | 15.17 грн |
74LVX132MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
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NSPU5132MUTBG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
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NCV21872DMR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.91 грн |
10+ | 48.05 грн |
25+ | 40.00 грн |
33+ | 27.36 грн |
91+ | 25.90 грн |
2500+ | 25.52 грн |
TIP42AG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
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FCD5N60TM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDBL0110N60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
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GBU8B |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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BC858CLT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2452 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
57+ | 7.26 грн |
107+ | 3.60 грн |
158+ | 2.44 грн |
188+ | 2.05 грн |
500+ | 1.31 грн |
694+ | 1.30 грн |
1909+ | 1.23 грн |
BC858CDXV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BC858BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NCP1076AAP100G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
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NCP1079BAP130G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
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MRA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.33 грн |
44+ | 8.89 грн |
52+ | 7.43 грн |
100+ | 6.82 грн |
195+ | 4.60 грн |
535+ | 4.37 грн |
NRVA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
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MC14007UBDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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FDBL0210N80 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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FDB0170N607L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDS4675 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.49 грн |
10+ | 80.47 грн |
18+ | 51.34 грн |
49+ | 48.28 грн |
500+ | 46.75 грн |
FQD7P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BAS29 | ![]() |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.63 грн |
31+ | 12.49 грн |
100+ | 6.02 грн |
321+ | 2.81 грн |
882+ | 2.66 грн |
US1AFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
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KSD560YTU |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
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NCV8406ASTT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
на замовлення 972 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.84 грн |
10+ | 78.93 грн |
17+ | 55.94 грн |
45+ | 52.88 грн |
250+ | 51.34 грн |
MMBZ5229BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.57 грн |
100+ | 3.83 грн |
195+ | 1.97 грн |
719+ | 1.26 грн |
1000+ | 1.23 грн |
1976+ | 1.19 грн |
3000+ | 1.14 грн |
FDS4672A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.43 грн |
10+ | 71.27 грн |
18+ | 52.88 грн |
47+ | 49.81 грн |
500+ | 48.28 грн |
FDS6576 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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NTMS10P02R2G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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74LCX08M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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74LCX08MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
на замовлення 1449 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.29 грн |
13+ | 31.19 грн |
25+ | 25.29 грн |
58+ | 15.79 грн |
158+ | 14.87 грн |
1000+ | 14.33 грн |
74LCX08MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
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MBR30170MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
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NTBG040N120M3S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Gate charge: 75nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 149A
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 80mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Gate charge: 75nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 149A
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 80mΩ
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NLSV1T34MUTBG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
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NLSV1T34AMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
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NLSV1T34AMX1TCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
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NLVSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
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NSR02100HT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSVR02100HT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
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MMBZ5231BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
на замовлення 783 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.54 грн |
88+ | 4.37 грн |
106+ | 3.62 грн |
124+ | 3.11 грн |
135+ | 2.85 грн |
679+ | 1.33 грн |
MJF122G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.55 грн |
10+ | 49.35 грн |
25+ | 36.86 грн |
1N5252B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
82+ | 4.67 грн |
106+ | 3.62 грн |
156+ | 2.47 грн |
500+ | 1.71 грн |
675+ | 1.33 грн |
1858+ | 1.26 грн |