Продукція > ONSEMI > Всі товари виробника ONSEMI (147515) > Сторінка 2453 з 2459

Обрати Сторінку:   [  << Попередня Сторінка ]  1 245 490 735 980 1225 1470 1715 1960 2205 2448 2449 2450 2451 2452 2453 2454 2455 2456 2457 2458 2459  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
6+70.15 грн
11+37.78 грн
25+29.89 грн
41+22.45 грн
110+21.92 грн
111+21.23 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
GBU4M GBU4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Mounting: SMD
Case: PQFN4
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
товару немає в наявності
В кошику  од. на суму  грн.
BCW30LT1G
+1
 		BCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 5515 шт:
термін постачання 21-30 дні (днів)
34+12.38 грн
59+6.51 грн
85+4.52 грн
100+3.89 грн
372+2.42 грн
1000+2.31 грн
1023+2.29 грн
3000+2.21 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SBCW30LT1G SBCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FJPF2145TU FJPF2145TU ONSEMI FAIRS44794-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
FL7760AM6X FL7760AM6X ONSEMI fl7760-d.pdf Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
MMBFJ175 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
В кошику  од. на суму  грн.
J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDG MC14007UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6 Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
13+33.01 грн
15+26.90 грн
46+20.00 грн
110+19.16 грн
124+18.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTHL160N120SC1 NTHL160N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
NCP170AMX150TCG ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
NCP170ASN150T2G ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74LVX132MTCX 74LVX132MTCX ONSEMI 74lvx132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
на замовлення 734 шт:
термін постачання 21-30 дні (днів)
10+43.74 грн
16+24.98 грн
25+20.61 грн
54+16.71 грн
100+15.71 грн
250+15.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVX132MX 74LVX132MX ONSEMI 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
NSPU5132MUTBG ONSEMI nspu5132-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
5+94.91 грн
10+48.05 грн
25+40.00 грн
33+27.36 грн
91+25.90 грн
2500+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
товару немає в наявності
В кошику  од. на суму  грн.
FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDBL0110N60 ONSEMI fdbl0110n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
GBU8B GBU8B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
BC858CLT1G BC858CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2452 шт:
термін постачання 21-30 дні (днів)
57+7.26 грн
107+3.60 грн
158+2.44 грн
188+2.05 грн
500+1.31 грн
694+1.30 грн
1909+1.23 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
BC858CDXV6T1G ONSEMI bc858cdxv6t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику  од. на суму  грн.
BC858BLT3G BC858BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику  од. на суму  грн.
NCP1076AAP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
NCP1079BAP130G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
MRA4007T3G MRA4007T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)
24+17.33 грн
44+8.89 грн
52+7.43 грн
100+6.82 грн
195+4.60 грн
535+4.37 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
NRVA4007T3G NRVA4007T3G ONSEMI mra4003t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDR2G MC14007UBDR2G ONSEMI mc14007ub-d.pdf Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
товару немає в наявності
В кошику  од. на суму  грн.
FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
товару немає в наявності
В кошику  од. на суму  грн.
FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
FDS4675 FDS4675 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC831677B06259&compId=FDS4675.pdf?ci_sign=4809cbb1187c7fbf052c62301643a4894d0b7257 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
4+120.49 грн
10+80.47 грн
18+51.34 грн
49+48.28 грн
500+46.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQD7P06TM ONSEMI fqd7p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BAS29 BAS29 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BDBB1EFB4B6469&compId=BAS29.pdf?ci_sign=aa776ef798c137e7ccb6c2d925deaae1c783ee3a description Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)
20+20.63 грн
31+12.49 грн
100+6.02 грн
321+2.81 грн
882+2.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
US1AFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
KSD560YTU KSD560YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику  од. на суму  грн.
NCV8406ASTT1G NCV8406ASTT1G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
4+118.84 грн
10+78.93 грн
17+55.94 грн
45+52.88 грн
250+51.34 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMBZ5229BLT1G MMBZ5229BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)
55+7.57 грн
100+3.83 грн
195+1.97 грн
719+1.26 грн
1000+1.23 грн
1976+1.19 грн
3000+1.14 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
FDS4672A FDS4672A ONSEMI fds4672a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)
5+92.43 грн
10+71.27 грн
18+52.88 грн
47+49.81 грн
500+48.28 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6576 FDS6576 ONSEMI fds6576-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NTMS10P02R2G NTMS10P02R2G ONSEMI ntms10p02r2-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
74LCX08M 74LCX08M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
товару немає в наявності
В кошику  од. на суму  грн.
74LCX08MTCX 74LCX08MTCX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
на замовлення 1449 шт:
термін постачання 21-30 дні (днів)
8+55.29 грн
13+31.19 грн
25+25.29 грн
58+15.79 грн
158+14.87 грн
1000+14.33 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LCX08MX 74LCX08MX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
товару немає в наявності
В кошику  од. на суму  грн.
MBR30170MFST1G ONSEMI mbr30170mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NTBG040N120M3S ONSEMI NTBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Gate charge: 75nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 149A
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 80mΩ
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34MUTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34AMUTCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34AMX1TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLVSV1T34DFT2G ONSEMI nlsv1t34-d.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NSR02100HT1G ONSEMI nsr02100ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NSVR02100HT1G ONSEMI nsr02100ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
MMBZ5231BLT1G MMBZ5231BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
на замовлення 783 шт:
термін постачання 21-30 дні (днів)
55+7.54 грн
88+4.37 грн
106+3.62 грн
124+3.11 грн
135+2.85 грн
679+1.33 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
MJF122G MJF122G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
7+63.55 грн
10+49.35 грн
25+36.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
1N5252B 1N5252B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)
56+7.43 грн
82+4.67 грн
106+3.62 грн
156+2.47 грн
500+1.71 грн
675+1.33 грн
1858+1.26 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.15 грн
11+37.78 грн
25+29.89 грн
41+22.45 грн
110+21.92 грн
111+21.23 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
GBU4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FCA20N60-F109 fca20n60_f109-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FCMT360N65S3 fcmt360n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Mounting: SMD
Case: PQFN4
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 25A
товару немає в наявності
В кошику  од. на суму  грн.
BCW30LT1G bcw30lt1-d.pdf
BCW30LT1G
+1
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 5515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.38 грн
59+6.51 грн
85+4.52 грн
100+3.89 грн
372+2.42 грн
1000+2.31 грн
1023+2.29 грн
3000+2.21 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDD5N50NZTM fdd5n50nz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FJPF2145TU FAIRS44794-1.pdf?t.download=true&u=5oefqw
FJPF2145TU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJR4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJG pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
FL7760AM6X fl7760-d.pdf
FL7760AM6X
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
MMBFJ175 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
В кошику  од. на суму  грн.
J176-D74Z j175-d.pdf
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6
MC14007UBDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.01 грн
15+26.90 грн
46+20.00 грн
110+19.16 грн
124+18.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTHL160N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361
NTHL160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
NCP170AMX150TCG ncp170-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
NCP170ASN150T2G ncp170-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
FCD1300N80Z fcd1300n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74LVX132MTCX 74lvx132-d.pdf
74LVX132MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
на замовлення 734 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.74 грн
16+24.98 грн
25+20.61 грн
54+16.71 грн
100+15.71 грн
250+15.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVX132MX 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw
74LVX132MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
NSPU5132MUTBG nspu5132-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
NCV21872DMR2G ncs21871-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.91 грн
10+48.05 грн
25+40.00 грн
33+27.36 грн
91+25.90 грн
2500+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TIP42AG tip41a-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Collector-emitter voltage: 60V
Current gain: 15...75
Collector current: 6A
Type of transistor: PNP
Power dissipation: 65W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 3MHz
товару немає в наявності
В кошику  од. на суму  грн.
FCD5N60TM-WS fcu5n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDBL0110N60 fdbl0110n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
GBU8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8B
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
BC858CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2452 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
57+7.26 грн
107+3.60 грн
158+2.44 грн
188+2.05 грн
500+1.31 грн
694+1.30 грн
1909+1.23 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
BC858CDXV6T1G bc858cdxv6t1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику  од. на суму  грн.
BC858BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику  од. на суму  грн.
NCP1076AAP100G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.9Ω
Output current: 0.65A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
NCP1079BAP130G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating voltage: 6.5...20V DC
Frequency: 117...143kHz
On-state resistance: 3.9Ω
Output current: 1.05A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...125°C
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
MRA4007T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4007T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.33 грн
44+8.89 грн
52+7.43 грн
100+6.82 грн
195+4.60 грн
535+4.37 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
NRVA4007T3G mra4003t3-d.pdf
NRVA4007T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 2A
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDR2G mc14007ub-d.pdf
MC14007UBDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
товару немає в наявності
В кошику  од. на суму  грн.
FDBL0210N80 fdbl0210n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
товару немає в наявності
В кошику  од. на суму  грн.
FDB0170N607L fdb0170n607l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
FDS4675 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC831677B06259&compId=FDS4675.pdf?ci_sign=4809cbb1187c7fbf052c62301643a4894d0b7257
FDS4675
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+120.49 грн
10+80.47 грн
18+51.34 грн
49+48.28 грн
500+46.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQD7P06TM fqd7p06-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.42A; 28W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.42A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 451mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BAS29 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BDBB1EFB4B6469&compId=BAS29.pdf?ci_sign=aa776ef798c137e7ccb6c2d925deaae1c783ee3a
BAS29
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.63 грн
31+12.49 грн
100+6.02 грн
321+2.81 грн
882+2.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
US1AFA us1mfa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
KSD560YTU pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7
KSD560YTU
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.5W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику  од. на суму  грн.
NCV8406ASTT1G ncv8406-d.pdf
NCV8406ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+118.84 грн
10+78.93 грн
17+55.94 грн
45+52.88 грн
250+51.34 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMBZ5229BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5229BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Case: SOT23
Tolerance: ±5%
на замовлення 5975 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.57 грн
100+3.83 грн
195+1.97 грн
719+1.26 грн
1000+1.23 грн
1976+1.19 грн
3000+1.14 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
FDS4672A fds4672a-d.pdf
FDS4672A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.43 грн
10+71.27 грн
18+52.88 грн
47+49.81 грн
500+48.28 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6576 fds6576-d.pdf
FDS6576
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NTMS10P02R2G ntms10p02r2-d.pdf
NTMS10P02R2G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
74LCX08M pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59
74LCX08M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
товару немає в наявності
В кошику  од. на суму  грн.
74LCX08MTCX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw
74LCX08MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
на замовлення 1449 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.29 грн
13+31.19 грн
25+25.29 грн
58+15.79 грн
158+14.87 грн
1000+14.33 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LCX08MX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw
74LCX08MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
товару немає в наявності
В кошику  од. на суму  грн.
MBR30170MFST1G mbr30170mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 170V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NTBG040N120M3S NTBG040N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Power dissipation: 131W
Polarisation: unipolar
Gate charge: 75nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 149A
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 80mΩ
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34MUTBG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34AMUTCG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: uDFN6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLSV1T34AMX1TCG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A70AD820&compId=NLSV1T34AMUTCG.pdf?ci_sign=98f6dd96d837e62e0dcfaf18c8b419dd1f460081
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: ULLGA6
Number of inputs: 1
Number of outputs: 1
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NLVSV1T34DFT2G nlsv1t34-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC88A
Supply voltage: 0.9...4.5V DC
Number of channels: 1
Quiescent current: 4µA
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NSR02100HT1G nsr02100ht1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
NSVR02100HT1G nsr02100ht1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
MMBZ5231BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5231BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Zener voltage: 5.1V
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
на замовлення 783 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.54 грн
88+4.37 грн
106+3.62 грн
124+3.11 грн
135+2.85 грн
679+1.33 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
MJF122G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937
MJF122G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.55 грн
10+49.35 грн
25+36.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
1N5252B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
1N5252B
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.43 грн
82+4.67 грн
106+3.62 грн
156+2.47 грн
500+1.71 грн
675+1.33 грн
1858+1.26 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 245 490 735 980 1225 1470 1715 1960 2205 2448 2449 2450 2451 2452 2453 2454 2455 2456 2457 2458 2459  [ Наступна Сторінка >> ]