Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MURA240T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 65ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NTMFWS1D5N08XT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 253A Pulsed drain current: 1071A Power dissipation: 194W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 1.43mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSC2690AYS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.2A Power dissipation: 1.2W Case: TO126ISO Pulsed collector current: 2.5A Current gain: 160...320 Mounting: THT Kind of package: bulk Frequency: 155MHz |
на замовлення 1863 шт: термін постачання 21-30 дні (днів) |
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KSC2690AYSTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.2A Power dissipation: 1.2W Case: TO126ISO Pulsed collector current: 2.5A Current gain: 160...320 Mounting: THT Kind of package: tube Frequency: 155MHz |
на замовлення 1578 шт: термін постачання 21-30 дні (днів) |
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SZMMSZ4681T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.4V Leakage current: 2µA Application: automotive industry Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ4xxT1G Mounting: SMD |
на замовлення 1760 шт: термін постачання 21-30 дні (днів) |
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1N5236B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
1N5236BTR | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NTBL070N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 110A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMC86012 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 88A Pulsed drain current: 230A Power dissipation: 54W Case: Power33 Gate-source voltage: ±12V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NLX1G74MUTCG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NLX Manufacturer series: MiniGate Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NLVX1G74MUTCG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NTMYS014N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 185A Power dissipation: 12W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SZ126P5X | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...85°C Case: SC70-5 Supply voltage: 1.65...5.5V DC Mounting: SMD Number of channels: 1 Quiescent current: 20µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NC7SZ126P5X-F22057 | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BZX84C39LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 3665 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C39ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SZBZX84C39LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBR8H100MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
UESD6.0DT5G | ONSEMI |
![]() Description: Diode: TVS array; 7V; double,common anode; SOT723; reel,tape Type of diode: TVS array Breakdown voltage: 7V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3081M | ONSEMI |
![]() Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Output voltage: 800V Manufacturer series: MOC3081M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LVX4053DR2G | ONSEMI |
![]() Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: LVX Supply voltage: -6...0V DC; 2.5...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSR14 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Collector-emitter voltage: 40V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.35W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 1713 шт: термін постачання 21-30 дні (днів) |
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MJE181G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO225 Case: TO225 Mounting: THT Kind of package: bulk Current gain: 50...250 Collector-emitter voltage: 60V Frequency: 50MHz Collector current: 3A Type of transistor: NPN Power dissipation: 12.5W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDD86113LZ | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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FGY120T65SPD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 378A Mounting: THT Gate charge: 162nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MUN5233DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Current gain: 80...200 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.25W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 |
на замовлення 145 шт: термін постачання 21-30 дні (днів) |
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NZT7053 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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FSQ110 | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 19Ω Duty cycle factor: 55...65% Power: 12W Application: SMPS Operating voltage: 8...19V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCT5211M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; 150kbps Case: DIP6 Max. off-state voltage: 6V Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Transfer rate: 150kbps Slew rate: 5kV/μs Type of optocoupler: optocoupler Mounting: THT |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT244ADTG | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD Manufacturer series: VHCT Case: TSSOP20 Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Kind of package: tube Technology: CMOS; TTL Kind of integrated circuit: 3-state; bus buffer; line driver; octal Family: VHCT Supply voltage: 4.5...5.5V DC |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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74VHCT244AMTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHCT244ADWRG | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; line driver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: VHCT Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT244ADTRG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NTMFS6H818NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Power dissipation: 70W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NTMFS6H818NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 900A Power dissipation: 68W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NVMFS6H818NT1G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 87A Pulsed drain current: 900A Power dissipation: 68W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FSL136HR | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1 Case: DIP8 Operating voltage: 8...24V DC Frequency: 0.1MHz On-state resistance: 4Ω Output voltage: 650V Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Input voltage: 85...265V Duty cycle factor: 71...83% Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: THT Operating temperature: -40...105°C Power: 20W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FSL136HRLX | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1 Case: LSOP8 Operating voltage: 8...24V DC Frequency: 0.1MHz On-state resistance: 4Ω Output voltage: 650V Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Input voltage: 85...265V Duty cycle factor: 71...83% Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Mounting: SMD Operating temperature: -40...105°C Power: 20W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HCPL2631S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
RS1GFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVHPRS1GFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8403ASTT1G | ONSEMI |
![]() Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 15A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 123mΩ Kind of package: reel; tape Supply voltage: 42V DC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMQ8403 | ONSEMI |
![]() Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12 Drain-source voltage: 100V Drain current: 6A On-state resistance: 191mΩ Type of transistor: N-MOSFET x4 Power dissipation: 17W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: WDFN12 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDB120N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 296A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOCD223M | ONSEMI |
![]() ![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
на замовлення 2118 шт: термін постачання 21-30 дні (днів) |
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STK544UC62K-E | ONSEMI |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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MG2040MUTAG | ONSEMI |
![]() Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape Number of channels: 14 Case: uDFN18 Max. off-state voltage: 5V Semiconductor structure: unidirectional Breakdown voltage: 5.5V Kind of package: reel; tape Type of diode: TVS array Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SZMG2040MUTAG | ONSEMI |
![]() Description: Diode: TVS array; unidirectional; uDFN18; reel,tape Application: automotive industry Case: uDFN18 Semiconductor structure: unidirectional Kind of package: reel; tape Type of diode: TVS array Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FODM121CR2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-200%@5mA Turn-on time: 3µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor CTR@If: 100-200%@5mA Manufacturer series: FODM121 Type of optocoupler: optocoupler Mounting: SMD Case: Mini-flat 4pin |
на замовлення 1399 шт: термін постачання 21-30 дні (днів) |
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GBU8KS | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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MC7808CTG | ONSEMI |
![]() ![]() Description: IC: voltage regulator Type of integrated circuit: voltage regulator |
на замовлення 2983 шт: термін постачання 21-30 дні (днів) |
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LM285D-2.5R2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
LM285Z-2.5RAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC34164P-5G | ONSEMI |
![]() Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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FDMC86320 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Case: Power33 Drain-source voltage: 80V Drain current: 22A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
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FDMC86324 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Case: PQFN8 Drain-source voltage: 80V Drain current: 20A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
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В кошику од. на суму грн. | ||||||||||||||||
FDMS86320 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 44A Pulsed drain current: 160A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
FDMS86322 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Pulsed drain current: 200A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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FDB045AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 90A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. |
MURA240T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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NTMFWS1D5N08XT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 253A
Pulsed drain current: 1071A
Power dissipation: 194W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.43mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 253A
Pulsed drain current: 1071A
Power dissipation: 194W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.43mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
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KSC2690AYS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 155MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 155MHz
на замовлення 1863 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.10 грн |
10+ | 40.58 грн |
39+ | 23.64 грн |
108+ | 22.38 грн |
500+ | 21.59 грн |
1000+ | 21.43 грн |
KSC2690AYSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 155MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.2A; 1.2W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.2A
Power dissipation: 1.2W
Case: TO126ISO
Pulsed collector current: 2.5A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 155MHz
на замовлення 1578 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.76 грн |
10+ | 53.03 грн |
25+ | 38.77 грн |
39+ | 23.64 грн |
108+ | 22.38 грн |
480+ | 21.43 грн |
SZMMSZ4681T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 2µA
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 2µA
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
на замовлення 1760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.67 грн |
34+ | 11.90 грн |
100+ | 5.45 грн |
305+ | 3.02 грн |
838+ | 2.86 грн |
1N5236B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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1N5236BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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NTBL070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86012 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 88A
Pulsed drain current: 230A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 88A
Pulsed drain current: 230A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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NLX1G74MUTCG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
Manufacturer series: MiniGate
Number of inputs: 4
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
Manufacturer series: MiniGate
Number of inputs: 4
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NLVX1G74MUTCG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Trigger: positive-edge-triggered
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NTMYS014N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NC7SZ126P5X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Number of channels: 1
Quiescent current: 20µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Number of channels: 1
Quiescent current: 20µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
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NC7SZ126P5X-F22057 |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.85 грн |
BZX84C39LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3665 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.33 грн |
75+ | 5.28 грн |
149+ | 2.65 грн |
707+ | 1.30 грн |
1941+ | 1.24 грн |
SZBZX84C39ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C39LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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MBR8H100MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
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UESD6.0DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 7V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 7V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 6V
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 7V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 7V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 6V
Kind of package: reel; tape
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MOC3081M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Output voltage: 800V
Manufacturer series: MOC3081M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Output voltage: 800V
Manufacturer series: MOC3081M
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MC74LVX4053DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LVX
Supply voltage: -6...0V DC; 2.5...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LVX
Supply voltage: -6...0V DC; 2.5...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
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BSR14 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 40V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 40V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 1713 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.61 грн |
24+ | 16.94 грн |
50+ | 12.29 грн |
75+ | 11.27 грн |
100+ | 10.72 грн |
136+ | 6.86 грн |
374+ | 6.46 грн |
1500+ | 6.30 грн |
MJE181G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 50...250
Collector-emitter voltage: 60V
Frequency: 50MHz
Collector current: 3A
Type of transistor: NPN
Power dissipation: 12.5W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 50...250
Collector-emitter voltage: 60V
Frequency: 50MHz
Collector current: 3A
Type of transistor: NPN
Power dissipation: 12.5W
Polarisation: bipolar
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FDD86113LZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 50.91 грн |
FGY120T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
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MUN5233DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 80...200
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 80...200
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
на замовлення 145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 18.33 грн |
47+ | 8.43 грн |
100+ | 5.32 грн |
NZT7053 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.97 грн |
14+ | 28.21 грн |
65+ | 14.26 грн |
178+ | 13.55 грн |
2000+ | 13.00 грн |
FSQ110 |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 55...65%
Power: 12W
Application: SMPS
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 650V; 100kHz; Ch: 1; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 19Ω
Duty cycle factor: 55...65%
Power: 12W
Application: SMPS
Operating voltage: 8...19V DC
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MCT5211M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; 150kbps
Case: DIP6
Max. off-state voltage: 6V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Transfer rate: 150kbps
Slew rate: 5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; 150kbps
Case: DIP6
Max. off-state voltage: 6V
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Transfer rate: 150kbps
Slew rate: 5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
на замовлення 856 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.73 грн |
10+ | 46.88 грн |
26+ | 35.85 грн |
71+ | 33.96 грн |
500+ | 32.62 грн |
MC74VHCT244ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Manufacturer series: VHCT
Case: TSSOP20
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: tube
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Family: VHCT
Supply voltage: 4.5...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Manufacturer series: VHCT
Case: TSSOP20
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: tube
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Family: VHCT
Supply voltage: 4.5...5.5V DC
на замовлення 222 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 100.13 грн |
10+ | 56.02 грн |
25+ | 37.35 грн |
68+ | 35.30 грн |
74VHCT244AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
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MC74VHCT244ADWRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
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MC74VHCT244ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Manufacturer series: VHCT
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NTMFS6H818NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Power dissipation: 70W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Power dissipation: 70W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS6H818NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Power dissipation: 68W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Power dissipation: 68W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H818NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Power dissipation: 68W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Power dissipation: 68W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSL136HR |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1
Case: DIP8
Operating voltage: 8...24V DC
Frequency: 0.1MHz
On-state resistance: 4Ω
Output voltage: 650V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 71...83%
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: THT
Operating temperature: -40...105°C
Power: 20W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1
Case: DIP8
Operating voltage: 8...24V DC
Frequency: 0.1MHz
On-state resistance: 4Ω
Output voltage: 650V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 71...83%
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: THT
Operating temperature: -40...105°C
Power: 20W
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FSL136HRLX |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1
Case: LSOP8
Operating voltage: 8...24V DC
Frequency: 0.1MHz
On-state resistance: 4Ω
Output voltage: 650V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 71...83%
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...105°C
Power: 20W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 3A; 650V; 100kHz; Ch: 1
Case: LSOP8
Operating voltage: 8...24V DC
Frequency: 0.1MHz
On-state resistance: 4Ω
Output voltage: 650V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 71...83%
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Mounting: SMD
Operating temperature: -40...105°C
Power: 20W
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HCPL2631S |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
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RS1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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RS1GFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVHPRS1GFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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NCV8403ASTT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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FDMQ8403 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 191mΩ
Type of transistor: N-MOSFET x4
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN12
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 191mΩ
Type of transistor: N-MOSFET x4
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN12
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FDB120N10 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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MOCD223M | ![]() |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 84.01 грн |
10+ | 50.82 грн |
22+ | 42.78 грн |
60+ | 40.42 грн |
100+ | 40.34 грн |
500+ | 38.92 грн |
STK544UC62K-E |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 128 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 1632.60 грн |
24+ | 1364.71 грн |
MG2040MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Case: uDFN18
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 5.5V
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Case: uDFN18
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Breakdown voltage: 5.5V
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
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SZMG2040MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; reel,tape
Application: automotive industry
Case: uDFN18
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; reel,tape
Application: automotive industry
Case: uDFN18
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
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FODM121CR2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-200%@5mA
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
CTR@If: 100-200%@5mA
Manufacturer series: FODM121
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 4pin
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-200%@5mA
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
CTR@If: 100-200%@5mA
Manufacturer series: FODM121
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 4pin
на замовлення 1399 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.46 грн |
9+ | 44.12 грн |
25+ | 29.31 грн |
43+ | 21.75 грн |
117+ | 20.57 грн |
GBU8KS |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MC7808CTG | ![]() |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: Fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 2983 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 18.50 грн |
LM285D-2.5R2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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LM285Z-2.5RAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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MC34164P-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 30.63 грн |
FDMC86320 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
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FDMC86324 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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FDMS86320 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 160A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 160A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86322 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB045AN08A0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhancement
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