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NGB8207ANT4G NGB8207ANT4G onsemi NGB8207AN%2CABN.pdf Description: IGBT 365V 20A 165W D2PAK3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 365 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 165 W
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NJVMJD32CT4G-VF01 NJVMJD32CT4G-VF01 onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
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NL17SHT00P5T5G NL17SHT00P5T5G onsemi nl17sht00-d.pdf Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT04P5T5G NL17SHT04P5T5G onsemi nl17sht04-d.pdf Description: IC INVERTER 1CH 1-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT126P5T5G NL17SHT126P5T5G onsemi nl17sht126-d.pdf Description: IC BUF NON-INVERT 5.5V SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SOT-953
Part Status: Active
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NL17SHT32P5T5G NL17SHT32P5T5G onsemi nl17sht32-d.pdf Description: IC GATE OR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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NOIL1SM0300A-WWC NOIL1SM0300A-WWC onsemi noil1sm0300a-d.pdf Description: IC IMAGE SENSOR LUPA300 48LLC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 70°C (TJ)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 9.9µm x 9.9µm
Active Pixel Array: 640H x 480V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 250.0
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NOM02A4-AR03G NOM02A4-AR03G onsemi Description: MODULE IMAGE SENSOR HIGH SPEED
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
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NOM02A6-AW49G NOM02A6-AW49G onsemi Description: MODULE IMAGE SENSOR HIGH SPEED
Packaging: Box
Package / Case: Module
Color: Monochrome
Interface: Analog Voltage
Type: CMOS
Resolution: 1 x 1248
Supplier Device Package: Module
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NSI50350ADT4G NSI50350ADT4G onsemi nsi50350ad-d.pdf Description: IC CURRENT REGULATOR 10% DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+30.78 грн
5000+27.40 грн
Мінімальне замовлення: 2500
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NSI50350AST3G NSI50350AST3G onsemi nsi50350as-d.pdf Description: IC CURRENT REGULATOR 10% SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMC
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
2500+25.30 грн
5000+22.44 грн
7500+21.46 грн
12500+19.35 грн
Мінімальне замовлення: 2500
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NTMFD4901NFT1G NTMFD4901NFT1G onsemi ntmfd4901nf-d.pdf Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4902NFT1G NTMFD4902NFT1G onsemi ntmfd4902nf-d.pdf Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4902NFT3G NTMFD4902NFT3G onsemi ntmfd4902nf-d.pdf Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFS5830NLT1G NTMFS5830NLT1G onsemi ntmfs5830nl-d.pdf Description: MOSFET N-CH 40V 28A/172A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
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NTSB20100CT-1G NTSB20100CT-1G onsemi ntst20100ct-d.pdf Description: DIODE ARRAY SCHOT 100V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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NTSB30100CT-1G NTSB30100CT-1G onsemi ntst30100ct-d.pdf Description: DIODE ARRAY SCHOT 100V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NTST20100CTG NTST20100CTG onsemi ntst20100ct-d.pdf Description: DIODE ARR SCHOTT 100V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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NTST30100CTG NTST30100CTG onsemi ntst30100ct-d.pdf Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NVF2955T1G NVF2955T1G onsemi ntf2955-d.pdf Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+38.38 грн
2000+33.92 грн
Мінімальне замовлення: 1000
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NVTFS4824NTWG NVTFS4824NTWG onsemi nvtfs4824n-d.pdf Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
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RB520S30T5G RB520S30T5G onsemi rb520s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
8000+0.92 грн
16000+0.84 грн
24000+0.82 грн
40000+0.77 грн
56000+0.75 грн
Мінімальне замовлення: 8000
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RB521S30T5G RB521S30T5G onsemi rb521s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
8000+0.99 грн
16000+0.94 грн
Мінімальне замовлення: 8000
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RD0306T-H RD0306T-H onsemi RD0306T.pdf Description: DIODE STANDARD 600V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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REF3012TB-GT3 REF3012TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3020TB-GT3 REF3020TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3025TB-GT3 REF3025TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3030TB-GT3 REF3030TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3033TB-GT3 REF3033TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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REF3040TB-GT3 REF3040TB-GT3 onsemi Ref3012%2C20%2C25%2C30%2C33%2C40.pdf Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.096V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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SB01-15C-TB-E SB01-15C-TB-E onsemi sb01-15c-d.pdf Description: DIODE SCHOTTKY 150V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
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SB02-09C-TB-E SB02-09C-TB-E onsemi sb02-09c-d.pdf Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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SB05-03Q-TL-E SB05-03Q-TL-E onsemi sb05-03q-d.pdf Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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SB05-05C-TB-E SB05-05C-TB-E onsemi sb05-05c-d.pdf Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
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SB05W05C-TB-E SB05W05C-TB-E onsemi sb05w05c-d.pdf Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+12.83 грн
6000+12.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SB07-03C-TB-E SB07-03C-TB-E onsemi en2997-d.pdf Description: DIODE SCHOTTKY 30V 700MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.74 грн
6000+9.44 грн
Мінімальне замовлення: 3000
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SB10-05P-TD-E SB10-05P-TD-E onsemi sb10-05p-d.pdf Description: DIODE SCHOTTKY 50V 1A SOT89/PCP1
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-89/PCP-1
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 80 µA @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+18.98 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SB20-03P-TD-E SB20-03P-TD-E onsemi sb20-03p-d.pdf Description: DIODE SCHOTTKY 30V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+16.25 грн
2000+12.64 грн
3000+12.29 грн
5000+10.49 грн
Мінімальне замовлення: 1000
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SB80W06T-H SB80W06T-H onsemi SB80W06T.pdf Description: DIODE ARRAY SCHOTTKY 60V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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SBA120-18J SBA120-18J onsemi SBA120-18J.pdf Description: DIODE ARR SCHOT 180V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 90 V
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SBR100-10JS SBR100-10JS onsemi SBR100-10J.pdf Description: DIODE ARR SCHOT 100V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBR200-10JS SBR200-10JS onsemi SBR200-10JS.pdf Description: DIODE ARR SCHOT 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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SBS817-TL-E SBS817-TL-E onsemi Description: DIODE ARRAY SCHOTTKY 15V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 7.5 V
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SBS818-TL-E SBS818-TL-E onsemi Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 15 V
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SBS822-TL-H onsemi sbs822-d.pdf Description: DIODE ARRAY SCHOTTKY 20V 5MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
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SBT100-10G SBT100-10G onsemi SBT100-10G.pdf Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBT100-16LS SBT100-16LS onsemi SBT100-16LS.pdf Description: DIODE ARR SCHOT 160V 10A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 160 V
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SBT150-04Y-DL-E SBT150-04Y-DL-E onsemi SBT150-04Y.pdf Description: DIODE ARRAY SCHOT 40V 15A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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SBT250-04R SBT250-04R onsemi SBT250-04R.pdf Description: DIODE ARR SCHOTT 40V 25A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
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SBT80-06J SBT80-06J onsemi SBT80-06J.pdf Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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SBT80-10J SBT80-10J onsemi SBT80-10J.pdf Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBT80-10JS SBT80-10JS onsemi SBT80-10JS.pdf Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBT80-10Y-E SBT80-10Y-E onsemi SBT80-10Y.pdf Description: DIODE ARRAY SCHOT 100V 8A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SCH1330-TL-H SCH1330-TL-H onsemi SCH1330-D.PDF Description: MOSFET P-CH 20V 1.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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SCH2202-TL-E SCH2202-TL-E onsemi Description: TRANS 2NPN DUAL 15V 600MA 6-SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 6-SCH
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SFT1345-TL-H SFT1345-TL-H onsemi sft1345-d.pdf Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
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SFT1445-TL-H SFT1445-TL-H onsemi ena1897-d.pdf Description: MOSFET N-CH 100V 17A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 8.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
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SFT1450-TL-H SFT1450-TL-H onsemi SFT1450.pdf Description: MOSFET N-CH 40V 21A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
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SM36T1G SM36T1G onsemi sm05t1-d.pdf Description: TVS DIODE 36VWM 60VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+6.98 грн
6000+6.57 грн
9000+5.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMMUN2211LT1G SMMUN2211LT1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+2.48 грн
6000+2.13 грн
9000+2.00 грн
15000+1.73 грн
21000+1.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NGB8207ANT4G NGB8207AN%2CABN.pdf
NGB8207ANT4G
Виробник: onsemi
Description: IGBT 365V 20A 165W D2PAK3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 365 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 165 W
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NJVMJD32CT4G-VF01 mjd31-d.pdf
NJVMJD32CT4G-VF01
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
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NL17SHT00P5T5G nl17sht00-d.pdf
NL17SHT00P5T5G
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT04P5T5G nl17sht04-d.pdf
NL17SHT04P5T5G
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT126P5T5G nl17sht126-d.pdf
NL17SHT126P5T5G
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SOT-953
Part Status: Active
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NL17SHT32P5T5G nl17sht32-d.pdf
NL17SHT32P5T5G
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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NOIL1SM0300A-WWC noil1sm0300a-d.pdf
NOIL1SM0300A-WWC
Виробник: onsemi
Description: IC IMAGE SENSOR LUPA300 48LLC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 70°C (TJ)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 9.9µm x 9.9µm
Active Pixel Array: 640H x 480V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 250.0
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NOM02A4-AR03G
NOM02A4-AR03G
Виробник: onsemi
Description: MODULE IMAGE SENSOR HIGH SPEED
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
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NOM02A6-AW49G
NOM02A6-AW49G
Виробник: onsemi
Description: MODULE IMAGE SENSOR HIGH SPEED
Packaging: Box
Package / Case: Module
Color: Monochrome
Interface: Analog Voltage
Type: CMOS
Resolution: 1 x 1248
Supplier Device Package: Module
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NSI50350ADT4G nsi50350ad-d.pdf
NSI50350ADT4G
Виробник: onsemi
Description: IC CURRENT REGULATOR 10% DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.78 грн
5000+27.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSI50350AST3G nsi50350as-d.pdf
NSI50350AST3G
Виробник: onsemi
Description: IC CURRENT REGULATOR 10% SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMC
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.30 грн
5000+22.44 грн
7500+21.46 грн
12500+19.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NTMFD4901NFT1G ntmfd4901nf-d.pdf
NTMFD4901NFT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4902NFT1G ntmfd4902nf-d.pdf
NTMFD4902NFT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4902NFT3G ntmfd4902nf-d.pdf
NTMFD4902NFT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFS5830NLT1G ntmfs5830nl-d.pdf
NTMFS5830NLT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 28A/172A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
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NTSB20100CT-1G ntst20100ct-d.pdf
NTSB20100CT-1G
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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NTSB30100CT-1G ntst30100ct-d.pdf
NTSB30100CT-1G
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NTST20100CTG ntst20100ct-d.pdf
NTST20100CTG
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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NTST30100CTG ntst30100ct-d.pdf
NTST30100CTG
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NVF2955T1G ntf2955-d.pdf
NVF2955T1G
Виробник: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+38.38 грн
2000+33.92 грн
Мінімальне замовлення: 1000
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NVTFS4824NTWG nvtfs4824n-d.pdf
NVTFS4824NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
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RB520S30T5G rb520s30t1-d.pdf
RB520S30T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+0.92 грн
16000+0.84 грн
24000+0.82 грн
40000+0.77 грн
56000+0.75 грн
Мінімальне замовлення: 8000
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RB521S30T5G rb521s30t1-d.pdf
RB521S30T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+0.99 грн
16000+0.94 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
RD0306T-H RD0306T.pdf
RD0306T-H
Виробник: onsemi
Description: DIODE STANDARD 600V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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REF3012TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3012TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3020TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3020TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3025TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3025TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3030TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3030TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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REF3033TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3033TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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REF3040TB-GT3 Ref3012%2C20%2C25%2C30%2C33%2C40.pdf
REF3040TB-GT3
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.096V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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SB01-15C-TB-E sb01-15c-d.pdf
SB01-15C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
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SB02-09C-TB-E sb02-09c-d.pdf
SB02-09C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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SB05-03Q-TL-E sb05-03q-d.pdf
SB05-03Q-TL-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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SB05-05C-TB-E sb05-05c-d.pdf
SB05-05C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
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SB05W05C-TB-E sb05w05c-d.pdf
SB05W05C-TB-E
Виробник: onsemi
Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.83 грн
6000+12.09 грн
Мінімальне замовлення: 3000
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SB07-03C-TB-E en2997-d.pdf
SB07-03C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 700MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.74 грн
6000+9.44 грн
Мінімальне замовлення: 3000
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SB10-05P-TD-E sb10-05p-d.pdf
SB10-05P-TD-E
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A SOT89/PCP1
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-89/PCP-1
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 80 µA @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+18.98 грн
Мінімальне замовлення: 1000
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SB20-03P-TD-E sb20-03p-d.pdf
SB20-03P-TD-E
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+16.25 грн
2000+12.64 грн
3000+12.29 грн
5000+10.49 грн
Мінімальне замовлення: 1000
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SB80W06T-H SB80W06T.pdf
SB80W06T-H
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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SBA120-18J SBA120-18J.pdf
SBA120-18J
Виробник: onsemi
Description: DIODE ARR SCHOT 180V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 90 V
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SBR100-10JS SBR100-10J.pdf
SBR100-10JS
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBR200-10JS SBR200-10JS.pdf
SBR200-10JS
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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SBS817-TL-E
SBS817-TL-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 15V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 7.5 V
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SBS818-TL-E
SBS818-TL-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 15 V
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SBS822-TL-H sbs822-d.pdf
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 20V 5MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
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SBT100-10G SBT100-10G.pdf
SBT100-10G
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SBT100-16LS SBT100-16LS.pdf
SBT100-16LS
Виробник: onsemi
Description: DIODE ARR SCHOT 160V 10A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 160 V
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SBT150-04Y-DL-E SBT150-04Y.pdf
SBT150-04Y-DL-E
Виробник: onsemi
Description: DIODE ARRAY SCHOT 40V 15A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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SBT250-04R SBT250-04R.pdf
SBT250-04R
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 25A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
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SBT80-06J SBT80-06J.pdf
SBT80-06J
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товару немає в наявності
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SBT80-10J SBT80-10J.pdf
SBT80-10J
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товару немає в наявності
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SBT80-10JS SBT80-10JS.pdf
SBT80-10JS
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товару немає в наявності
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SBT80-10Y-E SBT80-10Y.pdf
SBT80-10Y-E
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 8A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SCH1330-TL-H SCH1330-D.PDF
SCH1330-TL-H
Виробник: onsemi
Description: MOSFET P-CH 20V 1.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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SCH2202-TL-E
SCH2202-TL-E
Виробник: onsemi
Description: TRANS 2NPN DUAL 15V 600MA 6-SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 6-SCH
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SFT1345-TL-H sft1345-d.pdf
SFT1345-TL-H
Виробник: onsemi
Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
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SFT1445-TL-H ena1897-d.pdf
SFT1445-TL-H
Виробник: onsemi
Description: MOSFET N-CH 100V 17A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 8.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
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SFT1450-TL-H SFT1450.pdf
SFT1450-TL-H
Виробник: onsemi
Description: MOSFET N-CH 40V 21A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
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SM36T1G sm05t1-d.pdf
SM36T1G
Виробник: onsemi
Description: TVS DIODE 36VWM 60VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.98 грн
6000+6.57 грн
9000+5.82 грн
Мінімальне замовлення: 3000
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SMMUN2211LT1G dtc114e-d.pdf
SMMUN2211LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.48 грн
6000+2.13 грн
9000+2.00 грн
15000+1.73 грн
21000+1.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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