Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (723) > Сторінка 1 з 13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1.5KE150A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 7.2A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE16A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13.6V Breakdown voltage: 15.2...16.8V Max. forward impulse current: 67A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE180A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 6.1A Max. off-state voltage: 154V Breakdown voltage: 171...189V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE180CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; Ammo Pack Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 6.1A Max. off-state voltage: 154V Breakdown voltage: 171...189V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE180CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Max. forward impulse current: 6.1A Max. off-state voltage: 154V Breakdown voltage: 171...189V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE200A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: Ammo Pack Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE200A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE250A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 214V Breakdown voltage: 237...263V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Case: DO201AE Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE27A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 40A Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE36A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 30A Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE39CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Max. forward impulse current: 28A Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201AE Features of semiconductor devices: glass passivated Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5KE6.8CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMC18CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.1÷18.9V; 59.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ12A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷15.3V; 73.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 73.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ13A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Application: automotive industry Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ13A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5SMCJ15AS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 807 шт: термін постачання 14-30 дні (днів) |
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| 1.5SMCJ15A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ15CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 61.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ16A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.8÷20.5V; 57.7A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 57.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ170A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 189÷217.5V; 5.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...217.5V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ18A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ18A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ20A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 46.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ24A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ24A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ28A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5SMCJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 963 шт: термін постачання 14-30 дні (днів) |
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| 1.5SMCJ43CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...55V Max. forward impulse current: 21.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ48A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 19.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ54A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ54A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ54CA-AU_R1_006A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMCJ54CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4148W-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA Application: automotive industry |
на замовлення 5875 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA Application: automotive industry |
на замовлення 2681 шт: термін постачання 14-30 дні (днів) |
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1N4148WS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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1N4148W_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA |
на замовлення 21074 шт: термін постачання 14-30 дні (днів) |
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1N4448WS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Kind of package: reel; tape |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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1N4733A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4733A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4736A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.8V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4739A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4739A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 9.1V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4740A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4742A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 12V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4743A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 13V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4744A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 15V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO41 Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4744A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 15V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO41 Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4745A_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4746A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 18V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4750A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 27V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4752A_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 33V; tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Case: DO41 Mounting: THT Tolerance: ±5% Manufacturer series: 1N47xxA Semiconductor structure: single diode Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5338B_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.1V; tape; DO201AE; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Kind of package: tape Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 8431 шт: термін постачання 14-30 дні (днів) |
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1N5339B_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.6V; tape; DO201AE; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Kind of package: tape Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 9400 шт: термін постачання 14-30 дні (днів) |
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1N5342B_R2_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.8V; tape; DO201AE; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Kind of package: tape Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5359B_AY_00001 | PanJit Semiconductor |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 24V; Ammo Pack; DO201AE; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: Ammo Pack Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. |
| 1.5KE150A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE16A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE200A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE200A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE250A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Case: DO201AE
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Case: DO201AE
Manufacturer series: 1.5KE
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE27A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE36A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE39CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Max. forward impulse current: 28A
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Max. forward impulse current: 28A
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201AE
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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| 1.5KE6.8CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5SMC18CA-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.1÷18.9V; 59.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.1÷18.9V; 59.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 1.5SMCJ12A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷15.3V; 73.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 73.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷15.3V; 73.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 73.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ13A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ13A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ15AS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 807 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.39 грн |
| 17+ | 25.99 грн |
| 100+ | 19.18 грн |
| 400+ | 16.40 грн |
| 800+ | 15.39 грн |
| 1.5SMCJ15A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ15CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 1.5SMCJ16A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷20.5V; 57.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷20.5V; 57.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ170A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷217.5V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷217.5V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ18A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ18A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ20A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ24A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ24A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
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| 1.5SMCJ28A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ28A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ33A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ33A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 963 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| 17+ | 25.24 грн |
| 100+ | 18.93 грн |
| 400+ | 16.49 грн |
| 800+ | 15.48 грн |
| 1.5SMCJ43CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 1.5SMCJ48A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ5.0A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ54A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ54A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ54CA-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 1.5SMCJ54CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| 1N4148W-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 5875 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 117+ | 3.62 грн |
| 194+ | 2.17 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.36 грн |
| 3000+ | 1.14 грн |
| 1N4148WS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 2681 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 114+ | 3.70 грн |
| 195+ | 2.16 грн |
| 500+ | 1.48 грн |
| 1000+ | 1.26 грн |
| 2000+ | 1.24 грн |
| 1N4148WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 200 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 120+ | 3.53 грн |
| 200+ | 2.11 грн |
| 1N4148W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 21074 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.34 грн |
| 125+ | 3.36 грн |
| 199+ | 2.12 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.34 грн |
| 3000+ | 1.08 грн |
| 6000+ | 0.96 грн |
| 1N4448WS_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.12 грн |
| 50+ | 8.58 грн |
| 71+ | 5.99 грн |
| 100+ | 4.29 грн |
| 250+ | 3.00 грн |
| 500+ | 2.41 грн |
| 1000+ | 2.14 грн |
| 5000+ | 1.80 грн |
| 1N4733A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4733A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4736A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
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| 1N4739A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4739A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4740A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4742A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4743A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4744A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4744A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4745A_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4746A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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В кошику
од. на суму грн.
| 1N4750A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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В кошику
од. на суму грн.
| 1N4752A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N47xxA
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N47xxA
Semiconductor structure: single diode
Kind of package: tape
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В кошику
од. на суму грн.
| 1N5338B_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 8431 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.61 грн |
| 20+ | 22.12 грн |
| 100+ | 15.81 грн |
| 500+ | 12.28 грн |
| 1250+ | 10.77 грн |
| 1N5339B_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 9400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.65 грн |
| 24+ | 17.75 грн |
| 100+ | 14.89 грн |
| 250+ | 12.79 грн |
| 500+ | 12.45 грн |
| 1N5342B_R2_00001 |
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Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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од. на суму грн.
| 1N5359B_AY_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; Ammo Pack; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; Ammo Pack; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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од. на суму грн.




