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1.5KE120A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE120CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE12A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE150A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE200A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
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1.5KE200A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE27A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE36A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE39CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE56CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 19.5A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE6.8CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5SMCJ13A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ13A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ15AS_R1_00001 PanJit Semiconductor 1.5SMCJ8.5AS_SERIES.pdf 1.5SMCJ15AS-R1 Unidirectional TVS SMD diodes
на замовлення 807 шт:
термін постачання 7-14 дні (днів)
6+62.35 грн
66+17.88 грн
182+16.88 грн
Мінімальне замовлення: 6
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1.5SMCJ18A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ18A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ20A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ22A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷28V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ24A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ24A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
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1.5SMCJ24CA-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ24CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ28CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf 1.5SMCJ28CA-R1 Bidirectional TVS SMD diodes
на замовлення 529 шт:
термін постачання 7-14 дні (днів)
5+67.92 грн
59+20.16 грн
161+18.97 грн
Мінімальне замовлення: 5
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1.5SMCJ30CA-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ30CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ33A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf 1.5SMCJ33A-R1 Unidirectional TVS SMD diodes
на замовлення 965 шт:
термін постачання 7-14 дні (днів)
6+60.64 грн
61+19.37 грн
167+18.37 грн
20000+18.25 грн
Мінімальне замовлення: 6
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1.5SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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1.5SMCJ33CA_R1_00001 1.5SMCJ33CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 750 шт:
термін постачання 7-14 дні (днів)
6+57.75 грн
10+34.45 грн
100+24.43 грн
400+20.86 грн
800+19.47 грн
1600+18.37 грн
Мінімальне замовлення: 6
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1.5SMCJ33CA_R1_00001 1.5SMCJ33CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
10+48.13 грн
15+27.64 грн
100+20.36 грн
400+17.38 грн
Мінімальне замовлення: 10
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1.5SMCJ36CA_R1_00001 1.5SMCJ36CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMCJ
кількість в упаковці: 1 шт
на замовлення 789 шт:
термін постачання 7-14 дні (днів)
6+57.75 грн
10+34.45 грн
100+24.43 грн
400+20.86 грн
800+19.47 грн
1600+18.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ36CA_R1_00001 1.5SMCJ36CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMCJ
на замовлення 789 шт:
термін постачання 21-30 дні (днів)
10+48.13 грн
15+27.64 грн
100+20.36 грн
400+17.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ43CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ48A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ5.0A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ5.0CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ54A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ54A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ54CA-AU_R1_006A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ54CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1N4148W-AU_R1_000A1 1N4148W-AU_R1_000A1 PanJit Semiconductor 1N4148W-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 5875 шт:
термін постачання 21-30 дні (днів)
63+7.13 грн
120+3.48 грн
190+2.18 грн
500+1.53 грн
1000+1.29 грн
3000+1.11 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N4148W-AU_R1_000A1 1N4148W-AU_R1_000A1 PanJit Semiconductor 1N4148W-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 5875 шт:
термін постачання 7-14 дні (днів)
38+8.56 грн
72+4.33 грн
114+2.62 грн
500+1.84 грн
1000+1.55 грн
3000+1.33 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
1N4148W_R1_00001 1N4148W_R1_00001 PanJit Semiconductor 1N4148W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
кількість в упаковці: 1 шт
на замовлення 21074 шт:
термін постачання 7-14 дні (днів)
43+7.49 грн
77+4.02 грн
110+2.73 грн
500+1.95 грн
1000+1.62 грн
3000+1.14 грн
6000+1.12 грн
Мінімальне замовлення: 43
В кошику  од. на суму  грн.
1N4148WS-AU_R1_000A1 1N4148WS-AU_R1_000A1 PanJit Semiconductor 1N4148WS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 2681 шт:
термін постачання 21-30 дні (днів)
63+7.13 грн
107+3.89 грн
180+2.31 грн
500+1.79 грн
1000+1.61 грн
2000+1.37 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N4148WS-AU_R1_000A1 1N4148WS-AU_R1_000A1 PanJit Semiconductor 1N4148WS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2681 шт:
термін постачання 7-14 дні (днів)
38+8.56 грн
64+4.85 грн
108+2.77 грн
500+2.15 грн
1000+1.94 грн
2000+1.65 грн
5000+1.53 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
1N4148WS_R1_00001 1N4148WS_R1_00001 PanJit Semiconductor 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
кількість в упаковці: 1 шт
на замовлення 203 шт:
термін постачання 7-14 дні (днів)
34+9.63 грн
59+5.26 грн
100+3.18 грн
500+2.36 грн
1000+2.08 грн
5000+1.53 грн
10000+1.47 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N4148WS_R1_00001 1N4148WS_R1_00001 PanJit Semiconductor 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
56+8.02 грн
99+4.22 грн
157+2.65 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N4148W_R1_00001 1N4148W_R1_00001 PanJit Semiconductor 1N4148W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 21074 шт:
термін постачання 21-30 дні (днів)
72+6.24 грн
129+3.23 грн
182+2.28 грн
500+1.62 грн
1000+1.35 грн
3000+0.95 грн
6000+0.94 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448WS_R1_00001 PanJit Semiconductor 1N4448WS-R1 SMD universal diodes
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
13+25.63 грн
699+1.69 грн
1921+1.59 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
1N4733A_AY_00001 1N4733A_AY_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4733A_R2_00001 1N4733A_R2_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4736A_R2_00001 1N4736A_R2_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; tape; DO41; single diode; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
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1N4739A_AY_00001 1N4739A_AY_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4739A_R2_00001 1N4739A_R2_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4740A_AY_00001 1N4740A_AY_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4742A_AY_00001 1N4742A_AY_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4743A_AY_00001 1N4743A_AY_00001 PanJit Semiconductor 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1.5KE120A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE120CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE12A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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1.5KE150A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE200A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
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1.5KE200A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE27A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE36A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE39CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE56CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 19.5A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE6.8CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5SMCJ13A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Application: automotive industry
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ13A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ15AS_R1_00001 1.5SMCJ8.5AS_SERIES.pdf
Виробник: PanJit Semiconductor
1.5SMCJ15AS-R1 Unidirectional TVS SMD diodes
на замовлення 807 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
6+62.35 грн
66+17.88 грн
182+16.88 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ18A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ18A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ20A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ22A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷28V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ24A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ24A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
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1.5SMCJ24CA-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ24CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ28CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
1.5SMCJ28CA-R1 Bidirectional TVS SMD diodes
на замовлення 529 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
5+67.92 грн
59+20.16 грн
161+18.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1.5SMCJ30CA-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ30CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ33A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
1.5SMCJ33A-R1 Unidirectional TVS SMD diodes
на замовлення 965 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
6+60.64 грн
61+19.37 грн
167+18.37 грн
20000+18.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ33CA-AU_R1_000A1 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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1.5SMCJ33CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 750 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
6+57.75 грн
10+34.45 грн
100+24.43 грн
400+20.86 грн
800+19.47 грн
1600+18.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ33CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+48.13 грн
15+27.64 грн
100+20.36 грн
400+17.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ36CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMCJ
кількість в упаковці: 1 шт
на замовлення 789 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
6+57.75 грн
10+34.45 грн
100+24.43 грн
400+20.86 грн
800+19.47 грн
1600+18.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1.5SMCJ36CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMCJ
на замовлення 789 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+48.13 грн
15+27.64 грн
100+20.36 грн
400+17.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ43CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ48A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ5.0A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ5.0CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ54A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ54A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ54CA-AU_R1_006A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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В кошику  од. на суму  грн.
1.5SMCJ54CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷69V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1N4148W-AU_R1_000A1 1N4148W-AU.pdf
1N4148W-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 5875 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.13 грн
120+3.48 грн
190+2.18 грн
500+1.53 грн
1000+1.29 грн
3000+1.11 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N4148W-AU_R1_000A1 1N4148W-AU.pdf
1N4148W-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 5875 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
38+8.56 грн
72+4.33 грн
114+2.62 грн
500+1.84 грн
1000+1.55 грн
3000+1.33 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
1N4148W_R1_00001 1N4148W.pdf
1N4148W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
кількість в упаковці: 1 шт
на замовлення 21074 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
43+7.49 грн
77+4.02 грн
110+2.73 грн
500+1.95 грн
1000+1.62 грн
3000+1.14 грн
6000+1.12 грн
Мінімальне замовлення: 43
В кошику  од. на суму  грн.
1N4148WS-AU_R1_000A1 1N4148WS-AU.pdf
1N4148WS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
на замовлення 2681 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.13 грн
107+3.89 грн
180+2.31 грн
500+1.79 грн
1000+1.61 грн
2000+1.37 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N4148WS-AU_R1_000A1 1N4148WS-AU.pdf
1N4148WS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2681 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
38+8.56 грн
64+4.85 грн
108+2.77 грн
500+2.15 грн
1000+1.94 грн
2000+1.65 грн
5000+1.53 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
1N4148WS_R1_00001 1N4148WS.pdf
1N4148WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
кількість в упаковці: 1 шт
на замовлення 203 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
34+9.63 грн
59+5.26 грн
100+3.18 грн
500+2.36 грн
1000+2.08 грн
5000+1.53 грн
10000+1.47 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N4148WS_R1_00001 1N4148WS.pdf
1N4148WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+8.02 грн
99+4.22 грн
157+2.65 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N4148W_R1_00001 1N4148W.pdf
1N4148W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 21074 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.24 грн
129+3.23 грн
182+2.28 грн
500+1.62 грн
1000+1.35 грн
3000+0.95 грн
6000+0.94 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
1N4448WS_R1_00001
Виробник: PanJit Semiconductor
1N4448WS-R1 SMD universal diodes
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+25.63 грн
699+1.69 грн
1921+1.59 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
1N4733A_AY_00001 1N4728A_SERIES.pdf
1N4733A_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4733A_R2_00001 1N4728A_SERIES.pdf
1N4733A_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4736A_R2_00001 1N4728A_SERIES.pdf
1N4736A_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; tape; DO41; single diode; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
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1N4739A_AY_00001 1N4728A_SERIES.pdf
1N4739A_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4739A_R2_00001 1N4728A_SERIES.pdf
1N4739A_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4740A_AY_00001 1N4728A_SERIES.pdf
1N4740A_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4742A_AY_00001 1N4728A_SERIES.pdf
1N4742A_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4743A_AY_00001 1N4728A_SERIES.pdf
1N4743A_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
товару немає в наявності
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