Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1481) > Сторінка 1 з 25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1.5KE120A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 114...126V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE120CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 114...126V Max. forward impulse current: 9.1A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE12A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Max. off-state voltage: 10.2V Breakdown voltage: 11.4...12.6V Max. forward impulse current: 90A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE150A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 128V Breakdown voltage: 143...158V Max. forward impulse current: 7.2A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE180A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE180CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE180CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 171...189V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE200A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE200A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE250A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Max. off-state voltage: 214V Breakdown voltage: 237...263V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE27A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE36A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 30A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE39CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 28A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE51A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE Type of diode: TVS Max. off-state voltage: 43.6V Breakdown voltage: 48.5...53.6V Max. forward impulse current: 21.4A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE51CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 48.5÷53.6V; 21.4A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 43.6V Breakdown voltage: 48.5...53.6V Max. forward impulse current: 21.4A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE6.8CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE7.5CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 7.13÷7.88V; 132A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 6.4V Breakdown voltage: 7.13...7.88V Max. forward impulse current: 132A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC120A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 102V Breakdown voltage: 114...126V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC30A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC33CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Max. forward impulse current: 33A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 1.5SMC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC36A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 30A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC36A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 30A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMC68A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.3A; unidirectional; SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 64.6...71.4V Max. forward impulse current: 16.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5SMC Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5SMCJ15AS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 807 шт: термін постачання 14-21 дні (днів) |
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1.5SMCJ15AS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 807 шт: термін постачання 21-30 дні (днів) |
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| 1.5SMCJ16A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Semiconductor structure: unidirectional Case: SMC Mounting: SMD Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ18A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ18A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ18CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ18CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ28CA_R1_00001 | PanJit Semiconductor |
1.5SMCJ28CA-R1 Bidirectional TVS SMD diodes |
на замовлення 531 шт: термін постачання 14-21 дні (днів) |
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| 1.5SMCJ30A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5SMCJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 965 шт: термін постачання 14-21 дні (днів) |
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1.5SMCJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 965 шт: термін постачання 21-30 дні (днів) |
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| 1.5SMCJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; bidirectional; SMC; reel,tape; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Semiconductor structure: bidirectional Case: SMC Mounting: SMD Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5SMCJ33CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 750 шт: термін постачання 14-21 дні (днів) |
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1.5SMCJ33CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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| 1.5SMCJ36A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ36A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5SMCJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 789 шт: термін постачання 14-21 дні (днів) |
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1.5SMCJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 789 шт: термін постачання 21-30 дні (днів) |
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| 1.5SMCJ48A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 19.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Semiconductor structure: unidirectional Case: SMC Mounting: SMD Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Semiconductor structure: unidirectional Case: SMC Mounting: SMD Manufacturer series: 1.5SMCJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ70A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Max. forward impulse current: 13.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ70A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Max. forward impulse current: 13.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ70CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5SMCJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 94.4÷108.2V; 10.4A; bidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 10.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: 1.5SMCJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4148W-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry |
на замовлення 5879 шт: термін постачання 21-30 дні (днів) |
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1N4148W-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 5879 шт: термін постачання 14-21 дні (днів) |
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1N4148W_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 21074 шт: термін постачання 14-21 дні (днів) |
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1N4148WS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2791 шт: термін постачання 21-30 дні (днів) |
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1N4148WS-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2791 шт: термін постачання 14-21 дні (днів) |
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1N4148WS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 703 шт: термін постачання 14-21 дні (днів) |
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1N4148WS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
на замовлення 703 шт: термін постачання 21-30 дні (днів) |
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1N4148W_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
на замовлення 21074 шт: термін постачання 21-30 дні (днів) |
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1N4448WS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5000 шт: термін постачання 14-21 дні (днів) |
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| 1.5KE120A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE120CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE12A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE150A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE180CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE200A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE200A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5KE250A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE27A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE36A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE39CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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| 1.5KE51A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE51CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 21.4A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 21.4A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE6.8CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5KE7.5CA_R2_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.13÷7.88V; 132A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 132A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.13÷7.88V; 132A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 132A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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| 1.5SMC120A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMC30A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMC30A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMC33CA-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMC
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5SMC
Application: automotive industry
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| 1.5SMC36A-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMC36A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMC68A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.3A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6...71.4V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.3A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6...71.4V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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| 1.5SMCJ15AS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 807 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.73 грн |
| 10+ | 30.85 грн |
| 100+ | 21.92 грн |
| 400+ | 18.75 грн |
| 800+ | 17.59 грн |
| 1600+ | 16.44 грн |
| 2400+ | 15.77 грн |
| 1.5SMCJ15AS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 807 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.28 грн |
| 17+ | 24.76 грн |
| 100+ | 18.27 грн |
| 400+ | 15.62 грн |
| 800+ | 14.66 грн |
| 1.5SMCJ16A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 1.5SMCJ18A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 1.5SMCJ18A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5SMCJ18CA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| 1.5SMCJ18CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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од. на суму грн.
| 1.5SMCJ28CA_R1_00001 |
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Виробник: PanJit Semiconductor
1.5SMCJ28CA-R1 Bidirectional TVS SMD diodes
1.5SMCJ28CA-R1 Bidirectional TVS SMD diodes
на замовлення 531 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.85 грн |
| 59+ | 19.42 грн |
| 161+ | 18.36 грн |
| 5600+ | 18.27 грн |
| 1.5SMCJ30A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
од. на суму грн.
| 1.5SMCJ30A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5SMCJ33A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 965 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.70 грн |
| 10+ | 29.95 грн |
| 100+ | 21.63 грн |
| 400+ | 18.84 грн |
| 800+ | 17.69 грн |
| 1600+ | 17.02 грн |
| 1.5SMCJ33A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.41 грн |
| 17+ | 24.03 грн |
| 100+ | 18.03 грн |
| 400+ | 15.70 грн |
| 800+ | 14.74 грн |
| 1.5SMCJ33CA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; bidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; bidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| 1.5SMCJ33CA_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 750 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.91 грн |
| 10+ | 33.35 грн |
| 100+ | 23.65 грн |
| 400+ | 20.19 грн |
| 800+ | 18.84 грн |
| 1600+ | 17.69 грн |
| 2400+ | 17.59 грн |
| 1.5SMCJ33CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.59 грн |
| 15+ | 26.76 грн |
| 100+ | 19.71 грн |
| 400+ | 16.82 грн |
| 1.5SMCJ36A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
од. на суму грн.
| 1.5SMCJ36A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5SMCJ36CA_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 789 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.91 грн |
| 10+ | 33.35 грн |
| 100+ | 23.65 грн |
| 400+ | 20.19 грн |
| 800+ | 18.84 грн |
| 1600+ | 17.69 грн |
| 2400+ | 17.59 грн |
| 1.5SMCJ36CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 789 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.59 грн |
| 15+ | 26.76 грн |
| 100+ | 19.71 грн |
| 400+ | 16.82 грн |
| 1.5SMCJ48A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5SMCJ5.0A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| 1.5SMCJ58A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
од. на суму грн.
| 1.5SMCJ58A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; unidirectional; SMC; reel,tape; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| 1.5SMCJ70A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| 1.5SMCJ70A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMCJ70CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷89.5V; 13.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMCJ85CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷108.2V; 10.4A; bidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷108.2V; 10.4A; bidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148W-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 5879 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 103+ | 3.93 грн |
| 167+ | 2.40 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.52 грн |
| 3000+ | 1.24 грн |
| 1N4148W-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 5879 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.28 грн |
| 62+ | 4.89 грн |
| 100+ | 2.88 грн |
| 500+ | 2.09 грн |
| 1000+ | 1.83 грн |
| 3000+ | 1.49 грн |
| 6000+ | 1.32 грн |
| 1N4148W_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 21074 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.28 грн |
| 72+ | 4.19 грн |
| 101+ | 2.87 грн |
| 500+ | 2.18 грн |
| 1000+ | 1.91 грн |
| 3000+ | 1.51 грн |
| 6000+ | 1.28 грн |
| 1N4148WS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 88+ | 4.57 грн |
| 134+ | 3.00 грн |
| 500+ | 2.22 грн |
| 1000+ | 1.95 грн |
| 2000+ | 1.71 грн |
| 1N4148WS-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2791 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.28 грн |
| 53+ | 5.69 грн |
| 100+ | 3.60 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.34 грн |
| 2000+ | 2.05 грн |
| 5000+ | 1.71 грн |
| 1N4148WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 703 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.39 грн |
| 45+ | 6.69 грн |
| 100+ | 3.95 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.52 грн |
| 2000+ | 2.21 грн |
| 5000+ | 1.89 грн |
| 1N4148WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
на замовлення 703 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.49 грн |
| 75+ | 5.37 грн |
| 122+ | 3.29 грн |
| 500+ | 2.39 грн |
| 1N4148W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
на замовлення 21074 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 120+ | 3.36 грн |
| 168+ | 2.40 грн |
| 500+ | 1.82 грн |
| 1000+ | 1.59 грн |
| 3000+ | 1.26 грн |
| 6000+ | 1.07 грн |
| 9000+ | 0.97 грн |
| 15000+ | 0.91 грн |
| 1N4448WS_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.71 грн |
| 30+ | 10.18 грн |
| 43+ | 6.85 грн |
| 100+ | 4.90 грн |
| 250+ | 3.43 грн |
| 500+ | 2.75 грн |
| 1000+ | 2.45 грн |



