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1.5KE120A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE120CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE12A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE150A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE16A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE200A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
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1.5KE200A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE250A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Semiconductor structure: unidirectional
Max. off-state voltage: 214V
Case: DO201AE
Max. forward impulse current: 4.5A
Manufacturer series: 1.5KE
Breakdown voltage: 237...263V
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: TVS
Leakage current: 1µA
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1.5KE27A_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE36A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE39CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 21.4A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Case: DO201AE
Manufacturer series: 1.5KE
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1.5KE6.8CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE7.5CA_R2_00001 PanJit Semiconductor 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.13÷7.88V; 132A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 132A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5SMC120A_R1_00001 PanJit Semiconductor 1.5SMC_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Leakage current: 1µA
Max. forward impulse current: 9.1A
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
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1.5SMC15A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3÷15.8V; 71A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 71A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 1.5SMC
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1.5SMC30A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMC30A_R1_00001 PanJit Semiconductor 1.5SMC_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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1.5SMC30CA-AU_R1_000A1 PanJit Semiconductor 1.5SMC-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMC30CA_R1_00001 PanJit Semiconductor 1.5SMC_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMC51A_R1_00001 PanJit Semiconductor 1.5SMC_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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1.5SMC56A-AU_R2_000A1 PanJit Semiconductor 1.5SMC-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
Application: automotive industry
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1.5SMC56A_R1_00001 PanJit Semiconductor 1.5SMC_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
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1.5SMC56CA-AU_R1_000A1 PanJit Semiconductor 1.5SMC-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
Application: automotive industry
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1.5SMC56CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
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1.5SMCJ12A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷15.3V; 73.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 73.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ13A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 1.5SMCJ
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1.5SMCJ150A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 167...192.5V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 6.2A
Max. off-state voltage: 150V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ150CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 167...192.5V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 6.2A
Max. off-state voltage: 150V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ15AS_R1_00001 1.5SMCJ15AS_R1_00001 PanJit Semiconductor 1.5SMCJ8.5AS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
на замовлення 598 шт:
термін постачання 14-30 дні (днів)
11+44.07 грн
17+25.81 грн
100+19.04 грн
400+16.29 грн
Мінімальне замовлення: 11
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1.5SMCJ15A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ15CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ170A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷217.5V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ18A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ18A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ20A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ24A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ24A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
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1.5SMCJ24CA-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ24CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ26A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ26A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ28A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ28A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ28CA_R1_00001 1.5SMCJ28CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 529 шт:
термін постачання 14-30 дні (днів)
10+48.57 грн
14+30.23 грн
100+21.21 грн
400+17.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ30A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ30A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ33A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ33A_R1_00001 1.5SMCJ33A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 963 шт:
термін постачання 14-30 дні (днів)
11+43.17 грн
17+25.06 грн
100+18.79 грн
400+16.37 грн
800+15.37 грн
Мінімальне замовлення: 11
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1.5SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ33CA_R1_00001 1.5SMCJ33CA_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
10+48.57 грн
15+27.89 грн
100+20.55 грн
400+17.54 грн
Мінімальне замовлення: 10
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1.5SMCJ36A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ36A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ43A-AU_R1_000A1 PanJit Semiconductor 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ43CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ48A_R1_00001 PanJit Semiconductor 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5KE120A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE120CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 9.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE12A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 11.4÷12.6V; 90A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE150A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 143÷158V; 7.2A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE16A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 171÷189V; 6.1A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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1.5KE180CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE180CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 171÷189V; 6.1A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE200A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
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1.5KE200A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE250A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.5A; unidirectional; DO201AE; 1.5KE
Semiconductor structure: unidirectional
Max. off-state voltage: 214V
Case: DO201AE
Max. forward impulse current: 4.5A
Manufacturer series: 1.5KE
Breakdown voltage: 237...263V
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Mounting: THT
Type of diode: TVS
Leakage current: 1µA
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1.5KE27A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE36A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE39CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; DO201AE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE51CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 21.4A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: bidirectional
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Case: DO201AE
Manufacturer series: 1.5KE
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1.5KE6.8CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5KE7.5CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.13÷7.88V; 132A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 132A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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1.5SMC120A_R1_00001 1.5SMC_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 114÷126V; 9.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Leakage current: 1µA
Max. forward impulse current: 9.1A
Max. off-state voltage: 102V
Breakdown voltage: 114...126V
Peak pulse power dissipation: 1.5kW
Features of semiconductor devices: glass passivated
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1.5SMC15A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3÷15.8V; 71A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 71A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 1.5SMC
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1.5SMC30A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMC30A_R1_00001 1.5SMC_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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1.5SMC30CA-AU_R1_000A1 1.5SMC-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMC30CA_R1_00001 1.5SMC_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5÷31.5V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMC51A_R1_00001 1.5SMC_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 48.5÷53.6V; 21.4A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Max. forward impulse current: 21.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
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1.5SMC56A-AU_R2_000A1 1.5SMC-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
Application: automotive industry
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1.5SMC56A_R1_00001 1.5SMC_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; unidirectional; SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: unidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
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1.5SMC56CA-AU_R1_000A1 1.5SMC-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
Application: automotive industry
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1.5SMC56CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 19.5A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 1.5kW
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1.5SMCJ12A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷15.3V; 73.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 73.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ13A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: 1.5SMCJ
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1.5SMCJ150A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 167...192.5V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 6.2A
Max. off-state voltage: 150V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ150CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 167...192.5V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 6.2A
Max. off-state voltage: 150V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ15AS_R1_00001 1.5SMCJ8.5AS_SERIES.pdf
1.5SMCJ15AS_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
на замовлення 598 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+44.07 грн
17+25.81 грн
100+19.04 грн
400+16.29 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1.5SMCJ15A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ15CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷19.2V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Breakdown voltage: 16.7...19.2V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Max. forward impulse current: 61.5A
Max. off-state voltage: 15V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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1.5SMCJ170A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷217.5V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ18A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ18A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ20A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ24A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ24A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
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1.5SMCJ24CA-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ24CA_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ26A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ26A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷33.2V; 35.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 35.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ28A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ28A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ28CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ28CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷35.8V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 529 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+48.57 грн
14+30.23 грн
100+21.21 грн
400+17.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ30A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ30A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ33A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ33A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 963 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+43.17 грн
17+25.06 грн
100+18.79 грн
400+16.37 грн
800+15.37 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1.5SMCJ33CA-AU_R1_000A1 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ33CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷42.2V; 28.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+48.57 грн
15+27.89 грн
100+20.55 грн
400+17.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1.5SMCJ36A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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1.5SMCJ36A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷46V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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1.5SMCJ43A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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1.5SMCJ43CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷55V; 21.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...55V
Max. forward impulse current: 21.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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1.5SMCJ48A_R1_00001 1.5SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷61.3V; 19.4A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: 1.5SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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