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3.0SMCJ33A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ36A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ43CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ48A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ48CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ5.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ54CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Application: automotive industry
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3.0SMCJ54CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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3.0SMCJ58A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ58CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ58CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ6.0A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ60CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ64A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ85CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3EZ24_AY_00001 3EZ24_AY_00001 PanJit Semiconductor 3EZ6.8_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
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5KMC14AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC14CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC30AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC30CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC33AS-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC33CAS-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC36AS-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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5KMC36CAS-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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5KP20A_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP36A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; Ammo Pack; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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5KP36CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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5KP48CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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5KP48CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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AZ23C18-AU_R1_000A1 AZ23C18-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C18_R1_00501 AZ23C18_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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AZ23C27-AU_R1_000A1 AZ23C27-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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В кошику  од. на суму  грн.
AZ23C27_R1_00501 AZ23C27_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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AZ23C3V3-AU_R1_000A1 AZ23C3V3-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C3V3_R1_00501 AZ23C3V3_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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В кошику  од. на суму  грн.
AZ23C3V6_R1_00501 AZ23C3V6_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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B104S_R2_00001 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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В кошику  од. на суму  грн.
B108S_R2_00001 PanJit Semiconductor B1005S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; 30A; MDI; THT
Case: MDI
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
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В кошику  од. на суму  грн.
B10S_R2_00001 B10S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
на замовлення 2540 шт:
термін постачання 14-30 дні (днів)
25+18.10 грн
38+11.18 грн
100+8.83 грн
500+7.98 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor BAS16TS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28630 шт:
термін постачання 14-30 дні (днів)
125+3.62 грн
179+2.35 грн
219+1.92 грн
500+1.71 грн
1000+1.50 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
199+2.12 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor BAS16TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
50+9.05 грн
59+7.14 грн
100+5.93 грн
250+4.74 грн
500+4.24 грн
1000+3.56 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor BAS16_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
166+2.55 грн
500+1.92 грн
1000+1.66 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
36+12.67 грн
51+8.32 грн
65+6.56 грн
100+4.45 грн
500+3.53 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
на замовлення 11990 шт:
термін постачання 14-30 дні (днів)
63+7.24 грн
91+4.62 грн
116+3.64 грн
500+3.22 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
50+9.05 грн
88+4.79 грн
144+2.92 грн
500+2.13 грн
1000+1.87 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS70A-AU_R1_000A1 BAS70A-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
63+7.24 грн
79+5.38 грн
94+4.47 грн
133+3.18 грн
250+2.67 грн
500+2.40 грн
1000+2.23 грн
3000+2.12 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70S-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Leakage current: 45µA
на замовлення 32995 шт:
термін постачання 14-30 дні (днів)
63+7.24 грн
97+4.37 грн
148+2.86 грн
500+2.13 грн
1000+1.94 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Reverse recovery time: 5ns
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
34+12.61 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2136 шт:
термін постачання 14-30 дні (днів)
50+9.05 грн
91+4.62 грн
166+2.55 грн
500+2.14 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAT42WS_R1_00001 PanJit Semiconductor BAT42WS_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3439 шт:
термін постачання 14-30 дні (днів)
42+10.86 грн
73+5.80 грн
145+2.92 грн
500+2.07 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
63+7.24 грн
91+4.62 грн
136+3.09 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAT43W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 407 шт:
термін постачання 14-30 дні (днів)
63+7.24 грн
99+4.29 грн
157+2.69 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54A_R1_00001 PanJit Semiconductor BAT54_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
180+2.34 грн
500+1.72 грн
1000+1.50 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54C-AU_R1_000A1 PanJit Semiconductor BAT54-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAT54CTB6_R1_00001 BAT54CTB6_R1_00001 PanJit Semiconductor BAT54TB6_BAT54CTB6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ36A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
3.0SMCJ43CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
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3.0SMCJ48A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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3.0SMCJ48CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
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3.0SMCJ5.0A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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3.0SMCJ54A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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Мінімальне замовлення: 800 шт
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3.0SMCJ54CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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3.0SMCJ54CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ58A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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3.0SMCJ58CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ58CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ6.0A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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3.0SMCJ60CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
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3.0SMCJ64A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ85CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 800 шт
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3EZ24_AY_00001 3EZ6.8_SERIES.pdf
3EZ24_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
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5KMC14AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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Мінімальне замовлення: 800 шт
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5KMC14CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
5KMC30AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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Мінімальне замовлення: 800 шт
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5KMC30CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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Мінімальне замовлення: 800 шт
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5KMC33AS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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Мінімальне замовлення: 800 шт
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5KMC33CAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
5KMC36AS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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Мінімальне замовлення: 800 шт
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5KMC36CAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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Мінімальне замовлення: 800 шт
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5KP20A_R2_00001 5KP_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 22.2÷25.5V; 154A; unidirectional; P600; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 154A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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Мінімальне замовлення: 800 шт
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5KP36A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷46V; 85A; unidirectional; P600; Ammo Pack; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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Мінімальне замовлення: 400 шт
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5KP36CA_R2_00001 5KP_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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Мінімальне замовлення: 800 шт
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5KP48CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; Ammo Pack; 5kW
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: Ammo Pack
Manufacturer series: 5KP
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Мінімальне замовлення: 400 шт
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5KP48CA_R2_00001 5KP_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.3÷61.3V; 65A; bidirectional; P600; tape; 5kW; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 65A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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Мінімальне замовлення: 800 шт
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AZ23C18-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C18-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C18_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C18_R1_00501
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 18V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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AZ23C27-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C27-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C27_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C27_R1_00501
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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AZ23C3V3-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C3V3-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C3V3_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C3V3_R1_00501
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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AZ23C3V6_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C3V6_R1_00501
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.6V; SMD; SOT23; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common anode; double
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B104S_R2_00001
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; 30A; MDI; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 30A
Case: MDI
Electrical mounting: THT
Max. forward voltage: 1.1V
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B108S_R2_00001 B1005S_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; 30A; MDI; THT
Case: MDI
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.8kV
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B10S_R2_00001 B1S_SERIES.pdf
B10S_R2_00001
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
на замовлення 2540 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
25+18.10 грн
38+11.18 грн
100+8.83 грн
500+7.98 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU.pdf
BAS16TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28630 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
125+3.62 грн
179+2.35 грн
219+1.92 грн
500+1.71 грн
1000+1.50 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
72+6.34 грн
122+3.45 грн
199+2.12 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_SERIES.pdf
BAS16TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
50+9.05 грн
59+7.14 грн
100+5.93 грн
250+4.74 грн
500+4.24 грн
1000+3.56 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS16_SERIES.pdf
BAS21_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
72+6.34 грн
122+3.45 грн
166+2.55 грн
500+1.92 грн
1000+1.66 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAS316_R1_00001 BAS316.pdf
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
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BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
36+12.67 грн
51+8.32 грн
65+6.56 грн
100+4.45 грн
500+3.53 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
на замовлення 11990 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
63+7.24 грн
91+4.62 грн
116+3.64 грн
500+3.22 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
50+9.05 грн
88+4.79 грн
144+2.92 грн
500+2.13 грн
1000+1.87 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS70A-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
63+7.24 грн
79+5.38 грн
94+4.47 грн
133+3.18 грн
250+2.67 грн
500+2.40 грн
1000+2.23 грн
3000+2.12 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70S-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Leakage current: 45µA
на замовлення 32995 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
63+7.24 грн
97+4.37 грн
148+2.86 грн
500+2.13 грн
1000+1.94 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Reverse recovery time: 5ns
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
34+12.61 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
BAS70WS_R1_00001 BAS70WS.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2136 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
50+9.05 грн
91+4.62 грн
166+2.55 грн
500+2.14 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAT42WS_R1_00001 BAT42WS_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3439 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
42+10.86 грн
73+5.80 грн
145+2.92 грн
500+2.07 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
BAT42W_R1_00001 BAT42W_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
63+7.24 грн
91+4.62 грн
136+3.09 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAT43W_R1_00001 BAT42W_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 407 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
63+7.24 грн
99+4.29 грн
157+2.69 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54_SERIES.pdf
BAT54A_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
72+6.34 грн
122+3.45 грн
180+2.34 грн
500+1.72 грн
1000+1.50 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54-AU_SERIES.pdf
BAT54C-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
BAT54CTB6_R1_00001 BAT54TB6_BAT54CTB6.pdf
BAT54CTB6_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
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