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1SMB3EZ10-AU_R1_000A1 1SMB3EZ10-AU_R1_000A1 PanJit Semiconductor 1SMB3EZ5.1-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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1SMB3EZ10_R1_00001 1SMB3EZ10_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMB3EZ12_R1_00001 1SMB3EZ12_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMB3EZ19_R1_00001 1SMB3EZ19_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 19V; SMD; SMB; reel,tape; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 19V
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1SMB5921-AU_R1_000A1 1SMB5921-AU_R1_000A1 PanJit Semiconductor 1SMB5921-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5921_R1_00001 1SMB5921_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5922_R2_00001 1SMB5922_R2_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5923_R1_00001 1SMB5923_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5924-AU_R1_000A1 1SMB5924-AU_R1_000A1 PanJit Semiconductor 1SMB5921-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5924_R2_00001 1SMB5924_R2_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5925_R2_00001 1SMB5925_R2_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5926-AU_R1_000A1 1SMB5926-AU_R1_000A1 PanJit Semiconductor 1SMB5921-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 11V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5926_R1_00001 1SMB5926_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 11V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5927-AU_R1_000A1 1SMB5927-AU_R1_000A1 PanJit Semiconductor 1SMB5921-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5927_R1_00001 1SMB5927_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5928-AU_R1_000A1 1SMB5928-AU_R1_000A1 PanJit Semiconductor 1SMB5921-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5928_R1_00001 1SMB5928_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5929_R1_00001 1SMB5929_R1_00001 PanJit Semiconductor 1SMB5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMC5349_R1_00001 PanJit Semiconductor 1SMC5338_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 5W; 12V; SMD; SMC; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Zener voltage: 12V
Type of diode: Zener
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1SS417TM_R1_00001 1SS417TM_R1_00001 PanJit Semiconductor 1SS417TM.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.62V
Power dissipation: 0.1W
Max. off-state voltage: 45V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD923
Type of diode: Schottky switching
на замовлення 31926 шт:
термін постачання 14-30 дні (днів)
36+12.79 грн
66+6.45 грн
152+2.81 грн
250+2.23 грн
500+2.01 грн
1000+1.91 грн
4000+1.87 грн
Мінімальне замовлення: 36 шт
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2N7002K-AU_R1_000A2 2N7002K-AU_R1_000A2 PanJit Semiconductor 2N7002K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
27+17.36 грн
41+10.44 грн
Мінімальне замовлення: 27 шт
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2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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2N7002K_R1_00001 2N7002K_R1_00001 PanJit Semiconductor 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
на замовлення 378 шт:
термін постачання 14-30 дні (днів)
56+8.22 грн
91+4.67 грн
150+2.83 грн
Мінімальне замовлення: 56 шт
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2N7002K_R2_00001 2N7002K_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KTB_R1_00001 PanJit Semiconductor 2N7002KTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KW-AU_R1_000A1 2N7002KW-AU_R1_000A1 PanJit Semiconductor 2N7002KW-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3289 шт:
термін постачання 14-30 дні (днів)
30+15.53 грн
58+7.38 грн
146+2.91 грн
500+2.13 грн
1000+2.01 грн
3000+1.90 грн
Мінімальне замовлення: 30 шт
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2N7002KW_R1_00001 2N7002KW_R1_00001 PanJit Semiconductor 2N7002KW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2SB1197A_R1_00001 2SB1197A_R1_00001 PanJit Semiconductor 2SB1197A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 3.5A
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
на замовлення 1939 шт:
термін постачання 14-30 дні (днів)
20+23.76 грн
28+15.19 грн
100+8.82 грн
1000+6.11 грн
Мінімальне замовлення: 20 шт
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2SC164S_R1_00001 PanJit Semiconductor 2SC164S.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Mounting: SMD
Case: SOT23-6L
Frequency: 300MHz
Collector current: 0.2A
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
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2SC2222H_R1_00001 2SC2222H_R1_00001 PanJit Semiconductor 2SC2222H.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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2SC2411K-AU_R1_000A1 PanJit Semiconductor 2SC2411K-AU.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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2SC2411K_R1_00001 PanJit Semiconductor 2SC2411K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SC2411K_R2_00001 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 5A
Frequency: 250MHz
на замовлення 452 шт:
термін постачання 14-30 дні (днів)
14+34.72 грн
22+20.02 грн
100+12.73 грн
Мінімальне замовлення: 14 шт
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3.0SMCJ13A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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3.0SMCJ15A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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3.0SMCJ16A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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3.0SMCJ170CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ18A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ200CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 220÷256V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ20A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ22CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷28V; 84.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 84.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ24A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ24CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ24CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ26A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ26CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ26CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ28A-AU_R2_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ30A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ30A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ30CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ33A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ33A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ33A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ36A_R2_00001 3.0SMCJ36A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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1SMB3EZ10-AU_R1_000A1 1SMB3EZ5.1-AU_SER.pdf
1SMB3EZ10-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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1SMB3EZ10_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ10_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMB3EZ12_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ12_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
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1SMB3EZ19_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ19_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 19V; SMD; SMB; reel,tape; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 19V
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1SMB5921-AU_R1_000A1 1SMB5921-AU_SER.pdf
1SMB5921-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5921_R1_00001 1SMB5921_SERIES.pdf
1SMB5921_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5922_R2_00001 1SMB5921_SERIES.pdf
1SMB5922_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5923_R1_00001 1SMB5921_SERIES.pdf
1SMB5923_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5924-AU_R1_000A1 1SMB5921-AU_SER.pdf
1SMB5924-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5924_R2_00001 1SMB5921_SERIES.pdf
1SMB5924_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5925_R2_00001 1SMB5921_SERIES.pdf
1SMB5925_R2_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5926-AU_R1_000A1 1SMB5921-AU_SER.pdf
1SMB5926-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 11V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5926_R1_00001 1SMB5921_SERIES.pdf
1SMB5926_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 11V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5927-AU_R1_000A1 1SMB5921-AU_SER.pdf
1SMB5927-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5927_R1_00001 1SMB5921_SERIES.pdf
1SMB5927_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5928-AU_R1_000A1 1SMB5921-AU_SER.pdf
1SMB5928-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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1SMB5928_R1_00001 1SMB5921_SERIES.pdf
1SMB5928_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5929_R1_00001 1SMB5921_SERIES.pdf
1SMB5929_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMC5349_R1_00001 1SMC5338_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 5W; 12V; SMD; SMC; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Zener voltage: 12V
Type of diode: Zener
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1SS417TM_R1_00001 1SS417TM.pdf
1SS417TM_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.62V
Power dissipation: 0.1W
Max. off-state voltage: 45V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD923
Type of diode: Schottky switching
на замовлення 31926 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.79 грн
66+6.45 грн
152+2.81 грн
250+2.23 грн
500+2.01 грн
1000+1.91 грн
4000+1.87 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
2N7002K-AU_R1_000A2 2N7002K-AU.pdf
2N7002K-AU_R1_000A2
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+17.36 грн
41+10.44 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
2N7002KDW_R1_00001 2N7002KDW.pdf
2N7002KDW_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
на замовлення 378 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
56+8.22 грн
91+4.67 грн
150+2.83 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
2N7002K_R2_00001
2N7002K_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KTB_R1_00001 2N7002KTB.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KW-AU_R1_000A1 2N7002KW-AU.pdf
2N7002KW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3289 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.53 грн
58+7.38 грн
146+2.91 грн
500+2.13 грн
1000+2.01 грн
3000+1.90 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
2N7002KW_R1_00001 2N7002KW.pdf
2N7002KW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
2SB1197A_R1_00001 2SB1197A.pdf
2SB1197A_R1_00001
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 3.5A
Current gain: 100...300
Mounting: SMD
Frequency: 180MHz
на замовлення 1939 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+23.76 грн
28+15.19 грн
100+8.82 грн
1000+6.11 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
2SC164S_R1_00001 2SC164S.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Mounting: SMD
Case: SOT23-6L
Frequency: 300MHz
Collector current: 0.2A
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
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2SC2222H_R1_00001 2SC2222H.pdf
2SC2222H_R1_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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2SC2411K-AU_R1_000A1 2SC2411K-AU.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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2SC2411K_R1_00001 2SC2411K.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SC2411K_R2_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 5A
Frequency: 250MHz
на замовлення 452 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+34.72 грн
22+20.02 грн
100+12.73 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
3.0SMCJ13A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ15A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ16A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ170CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
3.0SMCJ18A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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В кошику  од. на суму  грн.
3.0SMCJ18A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ200CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 220÷256V; 9.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ20A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ22CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷28V; 84.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 84.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ24A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ24CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ24CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ26A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ26CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ26CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ28A-AU_R2_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
3.0SMCJ30A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ30A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ30CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
3.0SMCJ33A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ36A_R2_00001
3.0SMCJ36A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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