Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1217) > Сторінка 18 з 21
Фото | Назва | Виробник | Інформація |
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PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 14-21 дні (днів) |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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PSMP075N15NS1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PTGH4065S1_T0_00201 | PanJit Semiconductor | PTGH4065S1-T0 THT IGBT transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PZ1AL3V6B_R1_00001 | PanJit Semiconductor | PZ1AL3V6B-R1 SMD Zener diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PZS1112BES_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA кількість в упаковці: 30000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZS1112BES_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZS516V2BAS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PZS516V2BAS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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RB500V-40_R1_00001 | PanJit Semiconductor |
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на замовлення 7185 шт: термін постачання 14-21 дні (днів) |
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RB501V-40_R1_00001 | PanJit Semiconductor |
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на замовлення 5290 шт: термін постачання 14-21 дні (днів) |
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RB520S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 1µA Max. forward voltage: 0.6V кількість в упаковці: 1 шт |
на замовлення 4976 шт: термін постачання 14-21 дні (днів) |
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RB520S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 1µA Max. forward voltage: 0.6V |
на замовлення 4976 шт: термін постачання 21-30 дні (днів) |
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RB520S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 10ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.6V Leakage current: 0.6mA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB520S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 10ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.6V Leakage current: 0.6mA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 1A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB521S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA Max. forward voltage: 0.5V кількість в упаковці: 1 шт |
на замовлення 6478 шт: термін постачання 14-21 дні (днів) |
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RB521S30_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA Max. forward voltage: 0.5V |
на замовлення 6478 шт: термін постачання 21-30 дні (днів) |
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RB720M-30_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB751S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry Leakage current: 10µA Max. forward voltage: 0.37V |
на замовлення 2785 шт: термін постачання 21-30 дні (днів) |
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RB751S40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry Leakage current: 10µA Max. forward voltage: 0.37V кількість в упаковці: 1 шт |
на замовлення 2785 шт: термін постачання 14-21 дні (днів) |
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RB751S40_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A |
на замовлення 4899 шт: термін постачання 21-30 дні (днів) |
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RB751V-40X_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape |
на замовлення 4279 шт: термін постачання 21-30 дні (днів) |
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RB751V-40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 3247 шт: термін постачання 21-30 дні (днів) |
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A кількість в упаковці: 1 шт |
на замовлення 4899 шт: термін постачання 14-21 дні (днів) |
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RB751V-40_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W кількість в упаковці: 1 шт |
на замовлення 3247 шт: термін постачання 14-21 дні (днів) |
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RB751V-40X_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4279 шт: термін постачання 14-21 дні (днів) |
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RDXK210_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RDXK410_T0_00601 | PanJit Semiconductor | RDXK410-T0 Flat single phase diode bridge rectif. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RDXK610_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RDXK810_T0_00601 | PanJit Semiconductor | RDXK810-T0 Flat single phase diode bridge rectif. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RPMS210_R2_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RPMS310_R2_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RPMS410_R2_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RS1002FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 200V кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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RS1002FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 200V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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RS1004FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
на замовлення 2860 шт: термін постачання 14-21 дні (днів) |
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RS1004FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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RS1006FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1006FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1008FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.8kV кількість в упаковці: 1 шт |
на замовлення 2580 шт: термін постачання 14-21 дні (днів) |
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RS1008FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.8kV |
на замовлення 2580 шт: термін постачання 21-30 дні (днів) |
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RS1010FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 1kV Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A кількість в упаковці: 1 шт |
на замовлення 2054 шт: термін постачання 14-21 дні (днів) |
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RS1010FL_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 1kV Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Reverse recovery time: 0.5µs Leakage current: 50µA Load current: 1A |
на замовлення 2054 шт: термін постачання 21-30 дні (днів) |
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RS1D_R1_00001 | PanJit Semiconductor |
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на замовлення 1790 шт: термін постачання 14-21 дні (днів) |
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RS1J_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.3V кількість в упаковці: 1 шт |
на замовлення 1586 шт: термін постачання 14-21 дні (днів) |
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RS1J_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.3V |
на замовлення 1586 шт: термін постачання 21-30 дні (днів) |
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RS1K_R1_00001 | PanJit Semiconductor |
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на замовлення 1690 шт: термін постачання 14-21 дні (днів) |
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S100W_R1_00001 | PanJit Semiconductor | S100W-R1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S10KC-AU_R1_006A1 | PanJit Semiconductor | S10KC-AU-R1 SMD universal diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S10KC_R1_00601 | PanJit Semiconductor | S10KC-R1 SMD universal diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S10MC-AU_R1_006A1 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A Mounting: SMD Features of semiconductor devices: glass passivated Case: SMC Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 0.3kA Max. off-state voltage: 1kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S10MC-AU_R1_006A1 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A Mounting: SMD Features of semiconductor devices: glass passivated Case: SMC Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 0.3kA Max. off-state voltage: 1kV Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S10MC_R1_00601 | PanJit Semiconductor |
![]() Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A Mounting: SMD Features of semiconductor devices: glass passivated Case: SMC Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 0.3kA Max. off-state voltage: 1kV кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
PSMN028N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PSMN028N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 165.30 грн |
10+ | 93.47 грн |
18+ | 65.38 грн |
47+ | 61.59 грн |
5000+ | 58.74 грн |
PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 137.75 грн |
10+ | 75.01 грн |
18+ | 54.48 грн |
47+ | 51.32 грн |
PSMP075N15NS1_T0_00601 |
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Виробник: PanJit Semiconductor
PSMP075N15NS1-T0 THT N channel transistors
PSMP075N15NS1-T0 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
PTGH4065S1_T0_00201 |
Виробник: PanJit Semiconductor
PTGH4065S1-T0 THT IGBT transistors
PTGH4065S1-T0 THT IGBT transistors
товару немає в наявності
В кошику
од. на суму грн.
PZ1AL3V6B_R1_00001 |
Виробник: PanJit Semiconductor
PZ1AL3V6B-R1 SMD Zener diodes
PZ1AL3V6B-R1 SMD Zener diodes
товару немає в наявності
В кошику
од. на суму грн.
PZS1112BES_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 30000 шт
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 30000 шт
товару немає в наявності
В кошику
од. на суму грн.
PZS1112BES_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
товару немає в наявності
В кошику
од. на суму грн.
PZS516V2BAS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
100+ | 7.09 грн |
284+ | 3.92 грн |
781+ | 3.70 грн |
3000+ | 3.56 грн |
PZS516V2BAS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
100+ | 5.69 грн |
284+ | 3.27 грн |
781+ | 3.09 грн |
3000+ | 2.97 грн |
RB500V-40_R1_00001 |
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Виробник: PanJit Semiconductor
RB500V-40-R1 SMD Schottky diodes
RB500V-40-R1 SMD Schottky diodes
на замовлення 7185 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
72+ | 4.25 грн |
628+ | 1.77 грн |
1727+ | 1.67 грн |
RB501V-40_R1_00001 |
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Виробник: PanJit Semiconductor
RB501V-40-R1 SMD Schottky diodes
RB501V-40-R1 SMD Schottky diodes
на замовлення 5290 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
72+ | 4.25 грн |
646+ | 1.71 грн |
1774+ | 1.63 грн |
RB520S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
кількість в упаковці: 1 шт
на замовлення 4976 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.18 грн |
47+ | 6.30 грн |
100+ | 4.02 грн |
452+ | 2.46 грн |
1243+ | 2.33 грн |
5000+ | 2.25 грн |
RB520S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 1µA
Max. forward voltage: 0.6V
на замовлення 4976 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.65 грн |
79+ | 5.05 грн |
118+ | 3.35 грн |
452+ | 2.05 грн |
1243+ | 1.94 грн |
RB520S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
RB520S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
RB521S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
на замовлення 6478 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
32+ | 9.61 грн |
53+ | 5.61 грн |
100+ | 3.15 грн |
499+ | 2.24 грн |
1000+ | 2.08 грн |
2000+ | 2.04 грн |
RB521S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Max. forward voltage: 0.5V
на замовлення 6478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 8.01 грн |
88+ | 4.50 грн |
151+ | 2.62 грн |
499+ | 1.86 грн |
1000+ | 1.74 грн |
2000+ | 1.70 грн |
RB720M-30_R1_00001 |
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Виробник: PanJit Semiconductor
RB720M-30-R1 SMD Schottky diodes
RB720M-30-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
RB751S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
63+ | 6.32 грн |
100+ | 4.07 грн |
390+ | 2.38 грн |
1072+ | 2.25 грн |
RB751S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
кількість в упаковці: 1 шт
на замовлення 2785 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
38+ | 7.87 грн |
100+ | 4.89 грн |
390+ | 2.86 грн |
500+ | 2.85 грн |
1072+ | 2.70 грн |
5000+ | 2.68 грн |
RB751S40_R1_00001 |
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Виробник: PanJit Semiconductor
RB751S40-R1 SMD Schottky diodes
RB751S40-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
RB751V-40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
на замовлення 4899 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.60 грн |
51+ | 7.82 грн |
100+ | 4.88 грн |
388+ | 2.38 грн |
1065+ | 2.26 грн |
RB751V-40X_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
на замовлення 4279 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.65 грн |
62+ | 6.40 грн |
103+ | 3.84 грн |
452+ | 2.05 грн |
1241+ | 1.93 грн |
2500+ | 1.87 грн |
RB751V-40_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 3247 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.20 грн |
90+ | 4.42 грн |
125+ | 3.17 грн |
460+ | 2.01 грн |
1265+ | 1.90 грн |
RB751V-40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
на замовлення 4899 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 16.33 грн |
31+ | 9.74 грн |
100+ | 5.86 грн |
388+ | 2.86 грн |
1065+ | 2.71 грн |
5000+ | 2.67 грн |
RB751V-40_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
на замовлення 3247 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.24 грн |
54+ | 5.51 грн |
100+ | 3.80 грн |
460+ | 2.42 грн |
1265+ | 2.28 грн |
5000+ | 2.19 грн |
RB751V-40X_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4279 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.18 грн |
38+ | 7.97 грн |
100+ | 4.60 грн |
452+ | 2.46 грн |
1241+ | 2.32 грн |
2500+ | 2.25 грн |
RDXK210_T0_00601 |
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Виробник: PanJit Semiconductor
RDXK210-T0 Flat single phase diode bridge rectif.
RDXK210-T0 Flat single phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RDXK410_T0_00601 |
Виробник: PanJit Semiconductor
RDXK410-T0 Flat single phase diode bridge rectif.
RDXK410-T0 Flat single phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RDXK610_T0_00601 |
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Виробник: PanJit Semiconductor
RDXK610-T0 Flat single phase diode bridge rectif.
RDXK610-T0 Flat single phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RDXK810_T0_00601 |
Виробник: PanJit Semiconductor
RDXK810-T0 Flat single phase diode bridge rectif.
RDXK810-T0 Flat single phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RPMS210_R2_00601 |
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Виробник: PanJit Semiconductor
RPMS210-R2 SMD/THT sing. phase diode bridge rectif.
RPMS210-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RPMS310_R2_00601 |
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Виробник: PanJit Semiconductor
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RPMS410_R2_00601 |
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Виробник: PanJit Semiconductor
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
RS1002FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 16.33 грн |
30+ | 9.94 грн |
100+ | 5.65 грн |
257+ | 4.34 грн |
500+ | 4.05 грн |
1000+ | 3.94 грн |
RS1002FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 200V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.60 грн |
50+ | 7.97 грн |
100+ | 4.71 грн |
257+ | 3.62 грн |
500+ | 3.37 грн |
1000+ | 3.28 грн |
RS1004FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
на замовлення 2860 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 16.33 грн |
47+ | 6.40 грн |
100+ | 4.58 грн |
271+ | 4.12 грн |
500+ | 3.76 грн |
1000+ | 3.74 грн |
RS1004FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.60 грн |
77+ | 5.13 грн |
104+ | 3.81 грн |
271+ | 3.43 грн |
500+ | 3.13 грн |
1000+ | 3.12 грн |
RS1006FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
RS1006FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику
од. на суму грн.
RS1008FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
кількість в упаковці: 1 шт
на замовлення 2580 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 14.28 грн |
25+ | 12.20 грн |
100+ | 7.68 грн |
250+ | 4.46 грн |
686+ | 4.23 грн |
3000+ | 4.06 грн |
RS1008FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
на замовлення 2580 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.90 грн |
41+ | 9.79 грн |
100+ | 6.40 грн |
250+ | 3.72 грн |
686+ | 3.52 грн |
RS1010FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
кількість в упаковці: 1 шт
на замовлення 2054 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
14+ | 22.45 грн |
23+ | 13.28 грн |
100+ | 8.65 грн |
250+ | 4.46 грн |
686+ | 4.23 грн |
24000+ | 4.06 грн |
RS1010FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 0.5µs
Leakage current: 50µA
Load current: 1A
на замовлення 2054 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.71 грн |
38+ | 10.66 грн |
100+ | 7.21 грн |
250+ | 3.72 грн |
686+ | 3.52 грн |
RS1D_R1_00001 |
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Виробник: PanJit Semiconductor
RS1D-R1 SMD universal diodes
RS1D-R1 SMD universal diodes
на замовлення 1790 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 14.39 грн |
356+ | 3.12 грн |
978+ | 2.95 грн |
23400+ | 2.94 грн |
RS1J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
на замовлення 1586 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
18+ | 17.35 грн |
26+ | 11.51 грн |
100+ | 6.51 грн |
337+ | 3.31 грн |
926+ | 3.13 грн |
9000+ | 3.10 грн |
10800+ | 3.03 грн |
RS1J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.3V
на замовлення 1586 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.46 грн |
43+ | 9.24 грн |
100+ | 5.42 грн |
337+ | 2.76 грн |
926+ | 2.61 грн |
RS1K_R1_00001 |
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Виробник: PanJit Semiconductor
RS1K-R1 SMD universal diodes
RS1K-R1 SMD universal diodes
на замовлення 1690 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 16.33 грн |
312+ | 3.55 грн |
858+ | 3.36 грн |
S100W_R1_00001 |
Виробник: PanJit Semiconductor
S100W-R1 SMD Schottky diodes
S100W-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
S10KC-AU_R1_006A1 |
Виробник: PanJit Semiconductor
S10KC-AU-R1 SMD universal diodes
S10KC-AU-R1 SMD universal diodes
товару немає в наявності
В кошику
од. на суму грн.
S10KC_R1_00601 |
Виробник: PanJit Semiconductor
S10KC-R1 SMD universal diodes
S10KC-R1 SMD universal diodes
товару немає в наявності
В кошику
од. на суму грн.
S10MC-AU_R1_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
S10MC-AU_R1_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
S10MC_R1_00601 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 300A
Mounting: SMD
Features of semiconductor devices: glass passivated
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.