Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1484) > Сторінка 18 з 25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
на замовлення 2675 шт: термін постачання 21-30 дні (днів) |
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| PJA3401-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1793 шт: термін постачання 14-21 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1793 шт: термін постачання 21-30 дні (днів) |
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| PJA3401_R1_005A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 9015 шт: термін постачання 14-21 дні (днів) |
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9015 шт: термін постачання 21-30 дні (днів) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
на замовлення 2334 шт: термін постачання 14-21 дні (днів) |
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| PJA3404_R1_00501 | PanJit Semiconductor | PJA3404-R1 SMD N channel transistors |
на замовлення 3904 шт: термін постачання 14-21 дні (днів) |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
PJA3405-AU-R1 SMD P channel transistors |
на замовлення 2864 шт: термін постачання 14-21 дні (днів) |
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| PJA3406_R1_00001 | PanJit Semiconductor |
PJA3406-R1 SMD N channel transistors |
на замовлення 2470 шт: термін постачання 14-21 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2915 шт: термін постачання 14-21 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2915 шт: термін постачання 21-30 дні (днів) |
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| PJA3409_R1_00001 | PanJit Semiconductor |
PJA3409-R1 SMD P channel transistors |
на замовлення 2380 шт: термін постачання 14-21 дні (днів) |
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| PJA3411-AU_R1_000A1 | PanJit Semiconductor |
PJA3411-AU-R1 SMD P channel transistors |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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| PJA3412-AU_R1_000A1 | PanJit Semiconductor |
PJA3412-AU-R1 SMD N channel transistors |
на замовлення 2136 шт: термін постачання 14-21 дні (днів) |
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| PJA3412_R1_00501 | PanJit Semiconductor | PJA3412-R1 SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| PJA3413_R1_00001 | PanJit Semiconductor |
PJA3413-R1 SMD P channel transistors |
на замовлення 2370 шт: термін постачання 14-21 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -4.5A Gate charge: 10nC On-state resistance: 88mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -4.5A Gate charge: 10nC On-state resistance: 88mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJA3416AE_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 32A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2460 шт: термін постачання 14-21 дні (днів) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 32A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
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| PJA3428_R1_00001 | PanJit Semiconductor |
PJA3428-R1 SMD N channel transistors |
на замовлення 7390 шт: термін постачання 14-21 дні (днів) |
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| PJA3430-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.6A Kind of channel: enhancement Application: automotive industry Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 2565 шт: термін постачання 14-21 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V |
на замовлення 1770 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 1770 шт: термін постачання 14-21 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V |
на замовлення 1455 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 1455 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 7014 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V |
на замовлення 7014 шт: термін постачання 21-30 дні (днів) |
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| PJA3434-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 3770 шт: термін постачання 14-21 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 3770 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -500mA Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 5960 шт: термін постачання 14-21 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -500mA Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 5960 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±12V |
на замовлення 2988 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±12V кількість в упаковці: 1 шт |
на замовлення 2988 шт: термін постачання 14-21 дні (днів) |
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| PJA3436_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563 Type of transistor: N/P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Gate-source voltage: 10V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±20V |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| PJA3438_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -300mA Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -300mA Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJA3439_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563 Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: -600mA Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJA3440-AU_R1_000A1 | PanJit Semiconductor |
PJA3440-AU-R1 SMD N channel transistors |
на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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| PJA3441-AU_R1_000A1 | PanJit Semiconductor |
PJA3441-AU-R1 SMD P channel transistors |
на замовлення 2725 шт: термін постачання 14-21 дні (днів) |
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PJA3441_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1863 шт: термін постачання 14-21 дні (днів) |
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PJA3441_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1863 шт: термін постачання 21-30 дні (днів) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1013 шт: термін постачання 21-30 дні (днів) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1013 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3485 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3485 шт: термін постачання 21-30 дні (днів) |
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| PJA3463_R1_00001 | PanJit Semiconductor |
PJA3463-R1 SMD P channel transistors |
на замовлення 845 шт: термін постачання 14-21 дні (днів) |
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| PJA3471_R1_00501 | PanJit Semiconductor | PJA3471-R1 SMD P channel transistors |
на замовлення 12065 шт: термін постачання 14-21 дні (днів) |
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| PJB120N03S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJB120N04S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJB120N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Case: TO220AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJB240N04S7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
на замовлення 2675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 25+ | 16.62 грн |
| 100+ | 10.55 грн |
| 500+ | 7.74 грн |
| 1000+ | 6.76 грн |
| PJA3401-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1793 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.79 грн |
| 22+ | 14.14 грн |
| 100+ | 8.60 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.60 грн |
| 3000+ | 5.06 грн |
| PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 36+ | 11.35 грн |
| 100+ | 7.17 грн |
| 500+ | 5.30 грн |
| 1000+ | 4.67 грн |
| PJA3401_R1_005A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 9015 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.02 грн |
| 15+ | 20.62 грн |
| 100+ | 8.95 грн |
| 250+ | 8.21 грн |
| 500+ | 7.18 грн |
| 1000+ | 6.42 грн |
| 3000+ | 4.85 грн |
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 25+ | 16.54 грн |
| 100+ | 7.46 грн |
| 250+ | 6.84 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.35 грн |
| 3000+ | 4.04 грн |
| 9000+ | 3.57 грн |
| PJA3403_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
на замовлення 2334 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.57 грн |
| 255+ | 4.44 грн |
| 702+ | 4.19 грн |
| PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
PJA3404-R1 SMD N channel transistors
PJA3404-R1 SMD N channel transistors
на замовлення 3904 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.35 грн |
| 225+ | 5.08 грн |
| 617+ | 4.80 грн |
| PJA3405-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
на замовлення 2864 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.36 грн |
| 196+ | 5.75 грн |
| 538+ | 5.47 грн |
| PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3406-R1 SMD N channel transistors
PJA3406-R1 SMD N channel transistors
на замовлення 2470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.02 грн |
| 220+ | 5.14 грн |
| 605+ | 4.86 грн |
| PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2915 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.09 грн |
| 15+ | 20.52 грн |
| 100+ | 12.28 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.15 грн |
| 3000+ | 6.91 грн |
| 6000+ | 6.33 грн |
| PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2915 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 25+ | 16.47 грн |
| 100+ | 10.23 грн |
| 500+ | 7.59 грн |
| 1000+ | 6.79 грн |
| PJA3409_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
на замовлення 2380 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.76 грн |
| 202+ | 5.61 грн |
| 554+ | 5.31 грн |
| PJA3411-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3411-AU-R1 SMD P channel transistors
PJA3411-AU-R1 SMD P channel transistors
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.81 грн |
| 224+ | 5.05 грн |
| 616+ | 4.78 грн |
| PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
PJA3412-AU-R1 SMD N channel transistors
на замовлення 2136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.32 грн |
| 206+ | 5.50 грн |
| 566+ | 5.20 грн |
| 9000+ | 5.19 грн |
| PJA3412_R1_00501 |
Виробник: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.05 грн |
| 313+ | 3.63 грн |
| 859+ | 3.42 грн |
| PJA3413_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
на замовлення 2370 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.36 грн |
| 320+ | 3.54 грн |
| 880+ | 3.35 грн |
| PJA3415A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJA3415A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -4.5A
Gate charge: 10nC
On-state resistance: 88mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJA3416AE_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2460 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 30.99 грн |
| 16+ | 18.73 грн |
| 100+ | 11.31 грн |
| 500+ | 8.17 грн |
| 1000+ | 7.15 грн |
| 3000+ | 5.79 грн |
| 6000+ | 5.43 грн |
| PJA3416AE_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 27+ | 15.03 грн |
| 100+ | 9.42 грн |
| 500+ | 6.81 грн |
| 1000+ | 5.95 грн |
| PJA3428_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3428-R1 SMD N channel transistors
PJA3428-R1 SMD N channel transistors
на замовлення 7390 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.99 грн |
| 296+ | 3.83 грн |
| 814+ | 3.62 грн |
| PJA3430-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJA3430_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 2565 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.66 грн |
| 25+ | 12.05 грн |
| 100+ | 7.23 грн |
| 500+ | 5.23 грн |
| 1000+ | 4.54 грн |
| 3000+ | 4.41 грн |
| PJA3430_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 42+ | 9.67 грн |
| 100+ | 6.03 грн |
| 500+ | 4.36 грн |
| 1000+ | 3.78 грн |
| PJA3432-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 44+ | 9.27 грн |
| 100+ | 5.82 грн |
| 500+ | 4.23 грн |
| PJA3432-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.63 грн |
| 26+ | 11.55 грн |
| 100+ | 6.98 грн |
| 500+ | 5.07 грн |
| PJA3433-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
на замовлення 1455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 44+ | 9.27 грн |
| 100+ | 5.83 грн |
| 500+ | 4.72 грн |
| PJA3433-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 1455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.63 грн |
| 26+ | 11.55 грн |
| 100+ | 7.00 грн |
| 500+ | 5.66 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 7014 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.72 грн |
| 23+ | 13.55 грн |
| 100+ | 7.87 грн |
| 500+ | 5.73 грн |
| 1000+ | 5.11 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 7014 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 37+ | 10.87 грн |
| 100+ | 6.56 грн |
| 500+ | 4.77 грн |
| 1000+ | 4.26 грн |
| PJA3434-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 3770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.69 грн |
| 24+ | 12.55 грн |
| 100+ | 7.67 грн |
| 500+ | 5.60 грн |
| 1000+ | 4.89 грн |
| 3000+ | 4.02 грн |
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 3770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.08 грн |
| 40+ | 10.07 грн |
| 100+ | 6.39 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.08 грн |
| 3000+ | 3.35 грн |
| PJA3435_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 5960 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.86 грн |
| 20+ | 15.44 грн |
| 100+ | 9.61 грн |
| 500+ | 7.20 грн |
| 1000+ | 6.38 грн |
| 3000+ | 5.30 грн |
| 6000+ | 4.73 грн |
| PJA3435_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 5960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 33+ | 12.39 грн |
| 100+ | 8.01 грн |
| 500+ | 6.00 грн |
| 1000+ | 5.32 грн |
| 3000+ | 4.42 грн |
| PJA3436-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 34+ | 11.91 грн |
| 100+ | 7.39 грн |
| 500+ | 5.42 грн |
| 1000+ | 4.80 грн |
| PJA3436-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
на замовлення 2988 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 25.82 грн |
| 21+ | 14.84 грн |
| 100+ | 8.86 грн |
| 500+ | 6.50 грн |
| 1000+ | 5.76 грн |
| 3000+ | 4.82 грн |
| 6000+ | 4.60 грн |
| PJA3436_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3438-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 28+ | 14.55 грн |
| 100+ | 9.11 грн |
| 500+ | 6.63 грн |
| PJA3438-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.92 грн |
| 17+ | 18.13 грн |
| 100+ | 10.93 грн |
| 500+ | 7.95 грн |
| 1000+ | 6.95 грн |
| 3000+ | 5.65 грн |
| 6000+ | 4.97 грн |
| PJA3438_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -300mA
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3440-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
PJA3440-AU-R1 SMD N channel transistors
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.00 грн |
| 132+ | 8.54 грн |
| 363+ | 8.15 грн |
| PJA3441-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
PJA3441-AU-R1 SMD P channel transistors
на замовлення 2725 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.38 грн |
| 155+ | 7.29 грн |
| 425+ | 6.91 грн |
| PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1863 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 30.99 грн |
| 16+ | 19.72 грн |
| 100+ | 14.48 грн |
| 250+ | 10.17 грн |
| 500+ | 9.50 грн |
| 1000+ | 8.73 грн |
| 3000+ | 7.96 грн |
| PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 26+ | 15.83 грн |
| 100+ | 12.07 грн |
| 250+ | 8.47 грн |
| 500+ | 7.91 грн |
| 1000+ | 7.27 грн |
| PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1013 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.24 грн |
| 100+ | 15.59 грн |
| 149+ | 6.31 грн |
| 411+ | 5.99 грн |
| PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1013 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.89 грн |
| 100+ | 19.42 грн |
| 149+ | 7.58 грн |
| 411+ | 7.19 грн |
| 6000+ | 7.00 грн |
| PJA3460_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3485 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.86 грн |
| 19+ | 16.43 грн |
| 100+ | 9.11 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.71 грн |
| PJA3460_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 31+ | 13.19 грн |
| 100+ | 7.59 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.59 грн |
| PJA3463_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
PJA3463-R1 SMD P channel transistors
на замовлення 845 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.80 грн |
| 125+ | 9.11 грн |
| 342+ | 8.63 грн |
| PJA3471_R1_00501 |
Виробник: PanJit Semiconductor
PJA3471-R1 SMD P channel transistors
PJA3471-R1 SMD P channel transistors
на замовлення 12065 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.84 грн |
| 129+ | 8.82 грн |
| 354+ | 8.34 грн |
| PJB120N03S-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB120N04S-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB120N04V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB240N04S7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.

