Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1252) > Сторінка 18 з 21
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PJQ5458A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8 Application: automotive industry Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 16A Gate-source voltage: 20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJQ5546V-AU_R2_002A1 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJQ5808-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8 Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain current: -31A Drain-source voltage: -30V Gate-source voltage: 25V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5846-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8 Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate-source voltage: 20V Drain current: 40A Drain-source voltage: 40V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5846_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8 Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate-source voltage: 20V Drain current: 40A Drain-source voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6600_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6601-AU_S1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJS6601_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Case: SOT23-6 Gate-source voltage: ±12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.6/5.4nC On-state resistance: 95/190mΩ Power dissipation: 1.25W |
на замовлення 2586 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJS6602_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6603_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.2A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6604_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6815_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Drain current: 0.36A Gate-source voltage: 20V Drain-source voltage: 50V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD03LCFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Capacitance: 25pF Leakage current: 2.5µA Max. forward impulse current: 6A Number of channels: 1 Breakdown voltage: 5.4V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD05CFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1 Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Type of diode: TVS Capacitance: 70pF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 15A Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD05CTM_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1 Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Type of diode: TVS Capacitance: 30pF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 5.78V Peak pulse power dissipation: 0.1kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD05CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1 Application: automotive industry Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Type of diode: TVS Capacitance: 0.2nF Leakage current: 5µA Number of channels: 1 Max. forward impulse current: 24A Max. off-state voltage: 5V Breakdown voltage: 6.37V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD05CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1 Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Type of diode: TVS Capacitance: 0.2nF Leakage current: 5µA Number of channels: 1 Max. forward impulse current: 24A Max. off-state voltage: 5V Breakdown voltage: 7.04V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape Version: ESD Case: SOD523 Type of diode: TVS Capacitance: 0.11nF Leakage current: 5µA Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.12kW Application: automotive industry Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape |
на замовлення 4548 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
|
PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJSD36CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 40.57V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 29.4V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Capacitance: 0.15nF Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSOT36_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1 Mounting: SMD Number of channels: 1 Max. forward impulse current: 9A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Case: SOT23 Type of diode: TVS Capacitance: 80pF Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: SOT363 Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V |
на замовлення 2685 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Case: SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 1.6nC Power dissipation: 0.35W On-state resistance: 0.4Ω Drain current: 1A Pulsed drain current: 4A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: reel; tape |
на замовлення 5968 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJT7808_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.25A Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PJW4P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Application: automotive industry Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 5624 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJW4P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1nC |
на замовлення 3722 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.95/1.1nC |
на замовлення 1647 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJX8828-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8828_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8872B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 2A Max. forward impulse current: 70A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PMSM410_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6 Case: M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMSM608_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 6A Max. forward impulse current: 150A Case: M6 Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMSM810_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6 Case: M6 Type of bridge rectifier: single-phase Max. forward voltage: 1V Load current: 8A Max. forward impulse current: 200A Max. off-state voltage: 1kV Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS1223-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1 Type of diode: TVS Breakdown voltage: 5V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Case: DFN2 Max. off-state voltage: 2.8V Leakage current: 0.5µA Number of channels: 1 Capacitance: 0.17pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS161M-D62_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS4205-DFA_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 4 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS4313-DFA_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. off-state voltage: 3.3V Number of channels: 4 Max. forward impulse current: 5A Breakdown voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS5915-S26_S1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5 Case: SOT23-6L Mounting: SMD Semiconductor structure: unidirectional Type of diode: TVS Leakage current: 1µA Number of channels: 5 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PSMQB280N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC039N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC040N08NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 60V Drain current: 68A |
товару немає в наявності |
В кошику од. на суму грн. |
| PJQ5458A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5808-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5846-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5846_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
товару немає в наявності
В кошику
од. на суму грн.
| PJS6600_S1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601-AU_S1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.95 грн |
| 24+ | 17.91 грн |
| 100+ | 13.64 грн |
| 250+ | 12.14 грн |
| 500+ | 11.13 грн |
| 1000+ | 10.13 грн |
| PJS6602_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6603_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6604_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6815_S1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJSD03LCFN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
В кошику
од. на суму грн.
| PJSD05CFN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
В кошику
од. на суму грн.
| PJSD05CTM_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
товару немає в наявності
В кошику
од. на суму грн.
| PJSD05CW-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
В кошику
од. на суму грн.
| PJSD05CW_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
В кошику
од. на суму грн.
| PJSD05TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Version: ESD
Case: SOD523
Type of diode: TVS
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Version: ESD
Case: SOD523
Type of diode: TVS
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
на замовлення 4548 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.62 грн |
| 47+ | 8.96 грн |
| 100+ | 6.78 грн |
| 250+ | 6.03 грн |
| 500+ | 5.61 грн |
| 1000+ | 5.44 грн |
| 2500+ | 5.11 грн |
| PJSD24TS-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSD24TS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36CW-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36CW_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJSOT36_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| PJT7600_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.45 грн |
| 23+ | 18.58 грн |
| 100+ | 11.72 грн |
| 500+ | 8.87 грн |
| 1000+ | 7.87 грн |
| PJT7800_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
на замовлення 5968 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.92 грн |
| 60+ | 7.03 грн |
| 100+ | 6.45 грн |
| 250+ | 6.19 грн |
| 500+ | 5.86 грн |
| 1000+ | 5.36 грн |
| 3000+ | 5.27 грн |
| PJT7808_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW3P06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJW3P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW4P06A-AU_R2_007A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 5624 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.88 грн |
| 15+ | 28.71 грн |
| 100+ | 18.33 грн |
| 250+ | 15.40 грн |
| 500+ | 13.73 грн |
| 1000+ | 12.72 грн |
| PJW4P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.88 грн |
| 15+ | 29.21 грн |
| PJW5P06A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
товару немає в наявності
В кошику
од. на суму грн.
| PJW5P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
на замовлення 3722 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.23 грн |
| 48+ | 8.79 грн |
| 83+ | 5.09 грн |
| 100+ | 4.57 грн |
| 250+ | 4.34 грн |
| 500+ | 4.32 грн |
| PJX8603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
на замовлення 1647 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.54 грн |
| 33+ | 12.81 грн |
| 100+ | 8.96 грн |
| 500+ | 7.20 грн |
| 1000+ | 6.61 грн |
| PJX8828-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX8828_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX8872B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PM810_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
| PMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMS310_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMS410_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM410_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM608_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM810_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Electrical mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
| PS1223-D32_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
товару немає в наявності
В кошику
од. на суму грн.
| PS161M-D62_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PS4205-DFA_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| PS4313-DFA_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 5V
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; unidirectional; Ch: 4
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. off-state voltage: 3.3V
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| PS5915-S26_S1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 1µA
Number of channels: 5
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Case: SOT23-6L
Mounting: SMD
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 1µA
Number of channels: 5
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
товару немає в наявності
В кошику
од. на суму грн.
| PSMB033N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP033N10NS2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP055N08NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.22 грн |
| 10+ | 73.66 грн |
| 50+ | 66.97 грн |
| PSMQB280N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC039N10NS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC040N08NS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
товару немає в наявності
В кошику
од. на суму грн.