Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1429) > Сторінка 18 з 24
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuitsDescription: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC Input voltage: 750mV DC...5.5V DC Output current: 0.75A Case: SOT23-6 Operating temperature: -40...85°C Type of converter: DC/DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1864 шт: термін постачання 14-30 дні (днів) |
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| PJA3400-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6 Mounting: SMD Case: SOT23-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Gate-source voltage: 12V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Pulsed drain current: 19.6A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape |
на замовлення 2671 шт: термін постачання 14-30 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1783 шт: термін постачання 14-30 дні (днів) |
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| PJA3407E_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain current: 0.36A Gate-source voltage: 20V Drain-source voltage: 50V Kind of package: reel; tape Case: SOT363 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2364 шт: термін постачання 14-30 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 88mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 32998 шт: термін постачання 14-30 дні (днів) |
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| PJA3415AE-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363 Mounting: SMD Gate-source voltage: 10V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET x2 Kind of package: reel; tape Case: SOT363 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Pulsed drain current: -17.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3416AE_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Gate charge: 8.6nC On-state resistance: 34mΩ Power dissipation: 1.25W Drain current: 6.5A Gate-source voltage: ±8V Drain-source voltage: 20V Pulsed drain current: 32A |
на замовлення 3146 шт: термін постачання 14-30 дні (днів) |
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| PJA3430-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT223 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.6A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 2330 шт: термін постачання 14-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement |
на замовлення 1735 шт: термін постачання 14-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 3652 шт: термін постачання 14-30 дні (днів) |
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| PJA3434-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Drain current: 0.75A Pulsed drain current: 1.5A Gate-source voltage: ±10V Drain-source voltage: 20V Polarisation: unipolar |
на замовлення 3740 шт: термін постачання 14-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -500mA Pulsed drain current: -1A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5950 шт: термін постачання 14-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Gate-source voltage: ±12V Application: automotive industry Kind of channel: enhancement |
на замовлення 2978 шт: термін постачання 14-30 дні (днів) |
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| PJA3436_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563 Type of transistor: N/P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Gate-source voltage: 10V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| PJA3438_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.3A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJA3439_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563 Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 20V Drain current: -600mA Gate-source voltage: 8V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJB100N04S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 161A Case: TO263 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJB100N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 219A Case: TO263AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJB120N03S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJB120N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Mounting: SMD Case: TO220AB Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 80V Drain current: 166A Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJB140P04E7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 22A Drain-source voltage: 100V Gate-source voltage: 20V Application: automotive industry Kind of package: reel; tape Case: DFN3333-8 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
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PJC7400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 7.6A Drain current: 1.9A Gate charge: 4.8nC On-state resistance: 0.11Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 5345 шт: термін постачання 14-30 дні (днів) |
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PJC7401_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -6A Drain current: -1.5A Gate charge: 11nC On-state resistance: 0.18Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 2075 шт: термін постачання 14-30 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4A Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 5980 шт: термін постачання 14-30 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 7465 шт: термін постачання 14-30 дні (днів) |
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| PJC7409_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate-source voltage: 20V Drain current: 39A Drain-source voltage: 60V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJC7410_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 38A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 0.6A Drain current: 0.3A Gate charge: 0.9nC On-state resistance: 4Ω Power dissipation: 0.35W Gate-source voltage: ±10V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| PJC7438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain current: 63.8A Drain-source voltage: 80V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJC7438_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain current: 55A Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.35W Gate-source voltage: ±20V Application: automotive industry |
на замовлення 2875 шт: термін постачання 14-30 дні (днів) |
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| PJC7472B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50.1A; DFN3333-8 Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 100V Drain current: 50.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD100N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50.4A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJD10P10A_L2_00601 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 10A Drain-source voltage: 100V Gate-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD13N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | |||||||||||||||||
|
PJD15P06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15A Case: TO252AA Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -60A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJD15P06A_L2_00601 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJD16P06A_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -16A Case: TO252AA Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Pulsed drain current: -64A Gate charge: 22nC On-state resistance: 65mΩ Power dissipation: 2W |
на замовлення 10928 шт: термін постачання 14-30 дні (днів) |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD On-state resistance: 0.16Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 83W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJD30N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 43A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD40N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Case: TO252AA Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate-source voltage: 20V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD40N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Case: TO252AA Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJD45N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39nC On-state resistance: 15mΩ Drain current: 45A Gate-source voltage: ±20V Power dissipation: 63W Drain-source voltage: 60V Pulsed drain current: 180A Kind of channel: enhancement |
на замовлення 154 шт: термін постачання 14-30 дні (днів) |
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| PJD60N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD60N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 154A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD80N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD80N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 94A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJD9P06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJE138K_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT523 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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| PJE28VM2FN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 28V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 0.5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 29V Peak pulse power dissipation: 0.165kW |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJE28VM2TS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 28V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 0.5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 29V Peak pulse power dissipation: 0.165kW |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PJ30072S6_R1_00301 |
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Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
товару немає в наявності
В кошику
од. на суму грн.
| PJA138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1864 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 32+ | 14.48 грн |
| 80+ | 5.30 грн |
| 112+ | 3.76 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.50 грн |
| PJA3400-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Case: SOT23-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Gate-source voltage: 12V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
на замовлення 2671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.44 грн |
| 31+ | 13.95 грн |
| 100+ | 8.66 грн |
| 500+ | 6.30 грн |
| 1000+ | 5.46 грн |
| PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1783 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 19.91 грн |
| 29+ | 14.71 грн |
| 100+ | 8.23 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.52 грн |
| PJA3407E_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 29.87 грн |
| 25+ | 17.31 грн |
| 100+ | 10.76 грн |
| 500+ | 7.98 грн |
| 1000+ | 7.14 грн |
| PJA3415A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 32998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.63 грн |
| 28+ | 15.55 грн |
| 100+ | 8.24 грн |
| 250+ | 7.40 грн |
| 500+ | 6.89 грн |
| 1000+ | 6.56 грн |
| 3000+ | 5.88 грн |
| 9000+ | 5.80 грн |
| PJA3415AE-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
товару немає в наявності
В кошику
од. на суму грн.
| PJA3415AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
на замовлення 3146 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 23.53 грн |
| 31+ | 13.87 грн |
| 100+ | 8.57 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.30 грн |
| 3000+ | 5.13 грн |
| PJA3430-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2330 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 17.20 грн |
| 44+ | 9.75 грн |
| 100+ | 5.95 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.87 грн |
| PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 17.20 грн |
| 44+ | 9.75 грн |
| 100+ | 6.12 грн |
| 500+ | 4.45 грн |
| PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 17.20 грн |
| 44+ | 9.75 грн |
| 100+ | 6.14 грн |
| PJA3433_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 3652 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 39+ | 11.77 грн |
| 49+ | 8.74 грн |
| 100+ | 6.47 грн |
| 500+ | 5.80 грн |
| 1000+ | 4.62 грн |
| 3000+ | 4.54 грн |
| PJA3434-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3434_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
на замовлення 3740 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 30+ | 15.39 грн |
| 47+ | 9.08 грн |
| 100+ | 5.31 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.53 грн |
| PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 23.53 грн |
| 33+ | 13.03 грн |
| 100+ | 8.42 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.59 грн |
| 3000+ | 4.65 грн |
| PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.63 грн |
| 34+ | 12.52 грн |
| 100+ | 7.77 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.05 грн |
| PJA3436_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 25.34 грн |
| 28+ | 15.30 грн |
| 100+ | 9.58 грн |
| 500+ | 6.97 грн |
| PJA3438_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3439_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJB100N04S-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB100N04V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB120N03S-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB120N04V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB140P04E7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 5345 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 56+ | 8.15 грн |
| 67+ | 6.30 грн |
| 100+ | 5.97 грн |
| 500+ | 5.38 грн |
| PJC7401_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
On-state resistance: 0.18Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
On-state resistance: 0.18Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 2075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.59 грн |
| 23+ | 18.49 грн |
| 100+ | 11.85 грн |
| 250+ | 10.09 грн |
| 500+ | 8.91 грн |
| 1000+ | 7.98 грн |
| PJC7404_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 5980 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 46+ | 9.96 грн |
| 49+ | 8.74 грн |
| 100+ | 7.31 грн |
| 500+ | 6.56 грн |
| 1000+ | 6.05 грн |
| 3000+ | 5.88 грн |
| PJC7407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7465 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 9.05 грн |
| 69+ | 6.14 грн |
| 100+ | 5.72 грн |
| 500+ | 5.38 грн |
| 1000+ | 4.96 грн |
| PJC7409_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJC7410_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJC7428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.29 грн |
| 47+ | 9.08 грн |
| 100+ | 5.73 грн |
| 250+ | 4.82 грн |
| 500+ | 4.25 грн |
| PJC7438-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJC7438_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
товару немає в наявності
В кошику
од. на суму грн.
| PJC7439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
на замовлення 2875 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.29 грн |
| 46+ | 9.33 грн |
| 100+ | 5.77 грн |
| 500+ | 4.20 грн |
| 1000+ | 3.66 грн |
| PJC7472B_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.1A; DFN3333-8
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 100V
Drain current: 50.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.1A; DFN3333-8
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 100V
Drain current: 50.1A
товару немає в наявності
В кошику
од. на суму грн.
| PJD100N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| PJD10P10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| PJD13N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| PJD15P06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -60A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -60A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 25W
товару немає в наявності
В кошику
од. на суму грн.
| PJD15P06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD16P06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
On-state resistance: 65mΩ
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
On-state resistance: 65mΩ
Power dissipation: 2W
на замовлення 10928 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 48.88 грн |
| 14+ | 31.18 грн |
| 100+ | 21.27 грн |
| 250+ | 19.58 грн |
| PJD18N20_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
товару немає в наявності
В кошику
од. на суму грн.
| PJD30N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD40N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate-source voltage: 20V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate-source voltage: 20V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD40N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJD45N06A_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 63.36 грн |
| 11+ | 40.85 грн |
| 100+ | 28.16 грн |
| PJD60N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD60N04V-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD80N03_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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од. на суму грн.
| PJD80N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD9P06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJE138K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 36+ | 12.67 грн |
| 56+ | 7.56 грн |
| 100+ | 4.52 грн |
| 500+ | 4.01 грн |
| PJE28VM2FN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| PJE28VM2TS_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.






