Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1366) > Сторінка 18 з 23

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PJD35N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD40N06A-AU_L2_000A1 PanJit Semiconductor PJD40N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
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PJD40N06A_L2_00601 PJD40N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 8912 шт:
термін постачання 14-30 дні (днів)
10+47.99 грн
14+29.96 грн
100+26.90 грн
500+23.77 грн
1000+21.46 грн
3000+20.63 грн
Мінімальне замовлення: 10 шт
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PJD40P03E-AU_L2_006A1 PanJit Semiconductor PJD40P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD45N06A_L2_00001 PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
8+62.21 грн
11+40.11 грн
100+27.65 грн
Мінімальне замовлення: 8 шт
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PJD50N04-AU_L2_000A1 PanJit Semiconductor PJD50N04-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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PJD50N04V-AU_L2_002A1 PanJit Semiconductor PJD50N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70N10SA-AU_L2_006A1 PanJit Semiconductor PJD70N10SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70P03E-AU_L2_006A1 PanJit Semiconductor PJD70P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD75N04V-AU_L2_002A1 PanJit Semiconductor PJD75N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 181A; TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 181A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: TO252AA
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 Мінімальне замовлення: 30000 шт
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PJD80N06SA-AU_L2_006A1 PanJit Semiconductor PJD80N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD90P03E-AU_L2_006A1 PanJit Semiconductor PJD90P03E-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD9P06A-AU_L2_000A1 PanJit Semiconductor PJD9P06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
36+12.44 грн
56+7.43 грн
100+4.44 грн
500+3.89 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
PJE28VM2FN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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 Мінімальне замовлення: 10000 шт
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PJE28VM2TS_R1_00001 PJE28VM2TS_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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 Мінімальне замовлення: 5000 шт
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PJE5UFN10A-AU_R1_000A1 PanJit Semiconductor PJE5UFN10A-AU Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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 Мінімальне замовлення: 5000 шт
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PJE5UFN10A_R1_00001 PanJit Semiconductor PJE5UFN10A.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Case: SOT523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.8pF
на замовлення 19832 шт:
термін постачання 14-30 дні (днів)
34+13.33 грн
50+9.90 грн
100+8.83 грн
250+7.51 грн
500+7.01 грн
1000+6.77 грн
4000+6.11 грн
8000+5.61 грн
12000+5.45 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
PJE8400_R1_00001 PanJit Semiconductor PJE8400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8401_R1_00001 PanJit Semiconductor PJE8401.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8402_R1_00001 PJE8402_R1_00001 PanJit Semiconductor PJE8402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
на замовлення 3975 шт:
термін постачання 14-30 дні (днів)
20+22.22 грн
38+10.89 грн
50+8.50 грн
100+7.51 грн
500+5.61 грн
1000+5.36 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
PJE8404_R1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8405_R1_00001 PanJit Semiconductor PJE8405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
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PJE8406TB89_R1_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJE8407_R1_00001 PanJit Semiconductor PJE8407.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
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PJE8408_R1_00001 PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3480 шт:
термін постачання 14-30 дні (днів)
46+9.78 грн
70+5.94 грн
100+5.12 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
PJE8428_R1_00001 PanJit Semiconductor PJE8428 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
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PJE8472B_R1_00001 PanJit Semiconductor PJE8472B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_R1_000A1 PanJit Semiconductor PJEC12VM1TA-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
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 Мінімальне замовлення: 3000 шт
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PJEC12VM1TA_R1_00001 PJEC12VM1TA_R1_00001 PanJit Semiconductor PJEC12VM1TA Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
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 Мінімальне замовлення: 3000 шт
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS_R1_00001 PanJit Semiconductor PJEC2415VM1WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
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 Мінімальне замовлення: 5000 шт
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PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU_R1_000A1 PanJit Semiconductor PJEC24MTA-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
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 Мінімальне замовлення: 3000 шт
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PJEC24MTA_R1_00001 PJEC24MTA_R1_00001 PanJit Semiconductor PJEC24MTA.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
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PJGBLC05C_R1_00001 PJGBLC05C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Max. off-state voltage: 5V
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
на замовлення 700 шт:
термін постачання 14-30 дні (днів)
22+20.44 грн
31+13.37 грн
100+8.75 грн
500+6.35 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
PJGBLC12C_R1_00001 PJGBLC12C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Mounting: SMD
Max. off-state voltage: 12V
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
на замовлення 1307 шт:
термін постачання 14-30 дні (днів)
39+11.55 грн
59+7.01 грн
63+6.60 грн
100+6.35 грн
500+6.11 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
PJGL12_R1_00001 PJGL12_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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PJL9812_R2_00201 PJL9812_R2_00201 PanJit Semiconductor PJL9812.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Case: SOP8
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJL9850_R2_00001 PJL9850_R2_00001 PanJit Semiconductor PJL9850.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
на замовлення 5047 шт:
термін постачання 14-30 дні (днів)
9+54.21 грн
15+28.55 грн
50+18.82 грн
100+16.34 грн
250+14.86 грн
500+13.78 грн
1000+13.20 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
PJMB105N60FRC_R2_00201 PanJit Semiconductor PJMB105N60FRC Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJMB125N60FRC_R2_00201 PanJit Semiconductor PJMB125N60FRC Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJMB130N65EC_R2_00601 PJMB130N65EC_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 2400 шт
В кошику  од. на суму  грн.
PJMB130N65EC_T0_00601 PJMB130N65EC_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMBZ15V_R1_00501 PJMBZ15V_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.8V; 6A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 80pF
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJMBZ27V_R1_00501 PJMBZ27V_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 28.35V
Max. forward impulse current: 4A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Leakage current: 50nA
Number of channels: 2
Capacitance: 50pF
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJMBZ33A-AU_R1_007A1 PJMBZ33A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
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PJMBZ6V8A-AU_R1_007A1 PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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PJMD190N65FR2_L2_00601 PanJit Semiconductor PJMD190N65FR2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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PJMF105N60FRC_T0_00601 PanJit Semiconductor PJMF105N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMF125N60FRC_T0_00601 PanJit Semiconductor PJMF125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
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PJMF130N65EC_T0_006A1 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
On-state resistance: 0.13Ω
Mounting: THT
Pulsed drain current: 63A
Power dissipation: 14W
Gate charge: 51nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
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PJMF190N65FR2_T0_00601 PanJit Semiconductor PJMF190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF280N65E1_T0_00001 PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
3+175.98 грн
10+122.14 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJD35N06A_L2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD40N06A-AU_L2_000A1 PJD40N06A-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
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PJD40N06A_L2_00601
PJD40N06A_L2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 8912 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+47.99 грн
14+29.96 грн
100+26.90 грн
500+23.77 грн
1000+21.46 грн
3000+20.63 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
PJD40P03E-AU_L2_006A1 PJD40P03E-AU
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD45N06A_L2_00001 PJx45N06A.pdf
PJD45N06A_L2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+62.21 грн
11+40.11 грн
100+27.65 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
PJD50N04-AU_L2_000A1 PJD50N04-AU
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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PJD50N04V-AU_L2_002A1 PJD50N04V-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70N10SA-AU_L2_006A1 PJD70N10SA-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD75N04V-AU_L2_002A1 PJD75N04V-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 181A; TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 181A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: TO252AA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
PJD80N06SA-AU_L2_006A1 PJD80N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD9P06A-AU_L2_000A1 PJD9P06A-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.44 грн
56+7.43 грн
100+4.44 грн
500+3.89 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
PJE28VM2FN2_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PJE28VM2TS_R1_00001
PJE28VM2TS_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJE5UFN10A-AU_R1_000A1 PJE5UFN10A-AU
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJE5UFN10A_R1_00001 PJE5UFN10A.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Case: SOT523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.8pF
на замовлення 19832 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.33 грн
50+9.90 грн
100+8.83 грн
250+7.51 грн
500+7.01 грн
1000+6.77 грн
4000+6.11 грн
8000+5.61 грн
12000+5.45 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
PJE8400_R1_00001 PJE8400.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8401_R1_00001 PJE8401.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8402_R1_00001 PJE8402.pdf
PJE8402_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
на замовлення 3975 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.22 грн
38+10.89 грн
50+8.50 грн
100+7.51 грн
500+5.61 грн
1000+5.36 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
PJE8404_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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PJE8405_R1_00001 PJE8405.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
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PJE8406TB89_R1_00701
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJE8407_R1_00001 PJE8407.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
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В кошику  од. на суму  грн.
PJE8408_R1_00001 PJE8408.pdf
PJE8408_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3480 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+9.78 грн
70+5.94 грн
100+5.12 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
PJE8428_R1_00001 PJE8428
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
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PJE8472B_R1_00001 PJE8472B.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_SERIES.pdf
PJEC12VM1TA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJEC12VM1TA_R1_00001 PJEC12VM1TA
PJEC12VM1TA_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS.pdf
PJEC2415VM1WS_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU.pdf
PJEC24MTA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJEC24MTA_R1_00001 PJEC24MTA.pdf
PJEC24MTA_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
PJGBLC03C-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
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PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
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PJGBLC05C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC05C_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Max. off-state voltage: 5V
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
на замовлення 700 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+20.44 грн
31+13.37 грн
100+8.75 грн
500+6.35 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
PJGBLC12C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC12C_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Mounting: SMD
Max. off-state voltage: 12V
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
на замовлення 1307 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.55 грн
59+7.01 грн
63+6.60 грн
100+6.35 грн
500+6.11 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
PJGL12_R1_00001
PJGL12_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJL9812_R2_00201 PJL9812.pdf
PJL9812_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Case: SOP8
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJL9850_R2_00001 PJL9850.pdf
PJL9850_R2_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
на замовлення 5047 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+54.21 грн
15+28.55 грн
50+18.82 грн
100+16.34 грн
250+14.86 грн
500+13.78 грн
1000+13.20 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
PJMB105N60FRC_R2_00201 PJMB105N60FRC
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJMB125N60FRC_R2_00201 PJMB125N60FRC
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
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Мінімальне замовлення: 4000 шт
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PJMB130N65EC_R2_00601
PJMB130N65EC_R2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2400 шт
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PJMB130N65EC_T0_00601
PJMB130N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Case: TO263
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMBZ15V_R1_00501
PJMBZ15V_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.8V; 6A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 80pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
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PJMBZ27V_R1_00501
PJMBZ27V_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 28.35V
Max. forward impulse current: 4A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Leakage current: 50nA
Number of channels: 2
Capacitance: 50pF
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Мінімальне замовлення: 3000 шт
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PJMBZ33A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
PJMBZ33A-AU_R1_007A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
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PJMBZ6V8A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
PJMBZ6V8A-AU_R1_007A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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PJMD190N65FR2_L2_00601 PJMD190N65FR2
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 30000 шт
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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PJMF105N60FRC_T0_00601 PJMF105N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMF125N60FRC_T0_00601 PJMF125N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
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PJMF130N65EC_T0_006A1
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
On-state resistance: 0.13Ω
Mounting: THT
Pulsed drain current: 63A
Power dissipation: 14W
Gate charge: 51nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
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PJMF190N65FR2_T0_00601 PJMF190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
PJMF280N65E1_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+175.98 грн
10+122.14 грн
Мінімальне замовлення: 3 шт
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