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2SC2222H_R1_00001 PanJit Semiconductor 2SC2222H.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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2SC2411K-AU_R1_000A1 PanJit Semiconductor 2SC2411K-AU.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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2SC2411K_R1_00001 PanJit Semiconductor 2SC2411K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SC2411K_R2_00001 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 716 шт:
термін постачання 14-30 дні (днів)
14+34.42 грн
22+19.85 грн
100+12.62 грн
500+9.42 грн
Мінімальне замовлення: 14
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3.0SMCJ15A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ16A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ170A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ18A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ20A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ24A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ24CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ24CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ28A-AU_R2_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ36A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ43CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ5.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ58A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ58CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ58CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ6.0A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ85CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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5KMC14AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC14CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC30AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC30CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC33AS-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC33CAS-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC36AS-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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В кошику  од. на суму  грн.
5KMC36CAS-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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AZ23C27-AU_R1_000A1 AZ23C27-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C27_R1_00501 AZ23C27_R1_00501 PanJit Semiconductor AZ23C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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В кошику  од. на суму  грн.
AZ23C3V3-AU_R1_000A1 AZ23C3V3-AU_R1_000A1 PanJit Semiconductor AZ23C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor BAS16TS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28630 шт:
термін постачання 14-30 дні (днів)
125+3.62 грн
179+2.36 грн
219+1.93 грн
500+1.71 грн
1000+1.51 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
199+2.12 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor BAS16TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
50+9.06 грн
59+7.15 грн
100+5.93 грн
250+4.74 грн
500+4.24 грн
1000+3.56 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor BAS16_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
166+2.55 грн
500+1.93 грн
1000+1.66 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS316_R1_00001 BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
товару немає в наявності
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
36+12.68 грн
51+8.33 грн
65+6.56 грн
100+4.45 грн
500+3.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
на замовлення 11990 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
91+4.63 грн
116+3.64 грн
500+3.23 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
50+9.06 грн
88+4.79 грн
144+2.93 грн
500+2.13 грн
1000+1.88 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70S-AU_R1_000A1 PanJit Semiconductor BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Leakage current: 45µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.6A
на замовлення 33000 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
97+4.37 грн
148+2.86 грн
500+2.13 грн
1000+1.94 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
на замовлення 1834 шт:
термін постачання 14-30 дні (днів)
42+10.87 грн
64+6.65 грн
105+4.03 грн
500+3.43 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAS70WS_R1_00001 BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
на замовлення 2236 шт:
термін постачання 14-30 дні (днів)
50+9.06 грн
91+4.63 грн
166+2.55 грн
500+2.14 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAT42WS_R1_00001 BAT42WS_R1_00001 PanJit Semiconductor BAT42WS_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3439 шт:
термін постачання 14-30 дні (днів)
42+10.87 грн
73+5.80 грн
145+2.92 грн
500+2.07 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAT42W_R1_00001 BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
91+4.63 грн
136+3.10 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT43W_R1_00001 BAT43W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 599 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
95+4.46 грн
146+2.89 грн
500+2.27 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54A_R1_00001 PanJit Semiconductor BAT54_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 0.3A
Power dissipation: 0.225W
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
122+3.45 грн
180+2.34 грн
500+1.72 грн
1000+1.50 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54C-AU_R1_000A1 PanJit Semiconductor BAT54-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAT54CTB6_R1_00001 BAT54CTB6_R1_00001 PanJit Semiconductor BAT54TB6_BAT54CTB6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
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BAT54CW_R1_00001 BAT54CW_R1_00001 PanJit Semiconductor BAT54W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
на замовлення 1844 шт:
термін постачання 14-30 дні (днів)
56+8.15 грн
87+4.88 грн
146+2.89 грн
500+1.99 грн
1000+1.68 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BAT54C_R1_00001 BAT54C_R1_00001 PanJit Semiconductor BAT54_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 1855 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
114+3.70 грн
188+2.25 грн
500+1.60 грн
1000+1.40 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
2SC2222H_R1_00001 2SC2222H.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
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2SC2411K-AU_R1_000A1 2SC2411K-AU.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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2SC2411K_R1_00001 2SC2411K.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K_R2_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 716 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.42 грн
22+19.85 грн
100+12.62 грн
500+9.42 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
3.0SMCJ15A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ16A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ170A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ18A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ18A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ20A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ24A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ24CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ24CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ28A-AU_R2_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ33CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ36A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ43CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ5.0A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ58A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ58CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ58CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ6.0A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ85CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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5KMC14AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC14CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC30AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC30CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
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5KMC33AS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC33CAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
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5KMC36AS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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5KMC36CAS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86.1A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86.1A
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AZ23C27-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C27-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
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AZ23C27_R1_00501 AZ23C2V4_SERIES.pdf
AZ23C27_R1_00501
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 27V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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В кошику  од. на суму  грн.
AZ23C3V3-AU_R1_000A1 AZ23C2V4-AU_SER.pdf
AZ23C3V3-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 3.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU.pdf
BAS16TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28630 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
125+3.62 грн
179+2.36 грн
219+1.93 грн
500+1.71 грн
1000+1.51 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.34 грн
122+3.45 грн
199+2.12 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_SERIES.pdf
BAS16TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.06 грн
59+7.15 грн
100+5.93 грн
250+4.74 грн
500+4.24 грн
1000+3.56 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS16_SERIES.pdf
BAS21_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.34 грн
122+3.45 грн
166+2.55 грн
500+1.93 грн
1000+1.66 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS316_R1_00001 BAS316.pdf
BAS316_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
товару немає в наявності
В кошику  од. на суму  грн.
BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.68 грн
51+8.33 грн
65+6.56 грн
100+4.45 грн
500+3.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 1µA
на замовлення 11990 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
91+4.63 грн
116+3.64 грн
500+3.23 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.06 грн
88+4.79 грн
144+2.93 грн
500+2.13 грн
1000+1.88 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70S-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.9V
Leakage current: 45µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.6A
на замовлення 33000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
97+4.37 грн
148+2.86 грн
500+2.13 грн
1000+1.94 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
на замовлення 1834 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.87 грн
64+6.65 грн
105+4.03 грн
500+3.43 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAS70WS_R1_00001 BAS70WS.pdf
BAS70WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
на замовлення 2236 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.06 грн
91+4.63 грн
166+2.55 грн
500+2.14 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAT42WS_R1_00001 BAT42WS_SERIES.pdf
BAT42WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3439 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.87 грн
73+5.80 грн
145+2.92 грн
500+2.07 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAT42W_R1_00001 BAT42W_SERIES.pdf
BAT42W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
91+4.63 грн
136+3.10 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT43W_R1_00001 BAT42W_SERIES.pdf
BAT43W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 599 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
95+4.46 грн
146+2.89 грн
500+2.27 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54_SERIES.pdf
BAT54A_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 0.3A
Power dissipation: 0.225W
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.34 грн
122+3.45 грн
180+2.34 грн
500+1.72 грн
1000+1.50 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54-AU_SERIES.pdf
BAT54C-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BAT54CTB6_R1_00001 BAT54TB6_BAT54CTB6.pdf
BAT54CTB6_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
BAT54CW_R1_00001 BAT54W_SERIES.pdf
BAT54CW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
на замовлення 1844 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.15 грн
87+4.88 грн
146+2.89 грн
500+1.99 грн
1000+1.68 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BAT54C_R1_00001 BAT54_SERIES.pdf
BAT54C_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 1855 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
114+3.70 грн
188+2.25 грн
500+1.60 грн
1000+1.40 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
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