Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1252) > Сторінка 3 з 21

Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 10 12 14 16 18 20 21  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
1SMB3EZ12_R1_00001 1SMB3EZ12_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ24_R1_00001 1SMB3EZ24_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ27-AU_R1_000A1 1SMB3EZ27-AU_R1_000A1 PanJit Semiconductor 1SMB3EZ5.1-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ27_R1_00001 1SMB3EZ27_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ36-AU_R1_000A1 1SMB3EZ36-AU_R1_000A1 PanJit Semiconductor 1SMB3EZ5.1-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ36_R1_00001 1SMB3EZ36_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ6.2_R1_00001 1SMB3EZ6.2_R1_00001 PanJit Semiconductor 1SMB3EZ5.6_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SS417TM_R1_00001 1SS417TM_R1_00001 PanJit Semiconductor 1SS417TM.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Leakage current: 5µA
Load current: 0.1A
Power dissipation: 0.1W
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Max. off-state voltage: 45V
Kind of package: reel; tape
на замовлення 39930 шт:
термін постачання 14-30 дні (днів)
36+12.62 грн
66+6.36 грн
152+2.77 грн
250+2.20 грн
500+1.98 грн
1000+1.88 грн
4000+1.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
2EZ39_R2_00001 2EZ39_R2_00001 PanJit Semiconductor 2EZ6.8_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 2W; 39V; tape; DO15; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
2EZ51_AY_00001 2EZ51_AY_00001 PanJit Semiconductor 2EZ6.8_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 2W; 51V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 51V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
2N7002K-AU_R1_000A2 2N7002K-AU_R1_000A2 PanJit Semiconductor 2N7002K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
46+9.92 грн
68+6.19 грн
116+3.62 грн
500+2.36 грн
1000+2.04 грн
3000+1.93 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
27+17.13 грн
41+10.30 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
товару немає в наявності
В кошику  од. на суму  грн.
2N7002KTB_R1_00001 PanJit Semiconductor 2N7002KTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2N7002KW-AU_R1_000A1 2N7002KW-AU_R1_000A1 PanJit Semiconductor 2N7002KW-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3289 шт:
термін постачання 14-30 дні (днів)
32+14.42 грн
38+11.05 грн
100+6.01 грн
500+3.57 грн
1000+2.94 грн
3000+2.28 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
2N7002KW_R1_00001 PanJit Semiconductor 2N7002KW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2N7002K_R1_00001 2N7002K_R1_00001 PanJit Semiconductor 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2705 шт:
термін постачання 14-30 дні (днів)
56+8.11 грн
91+4.60 грн
150+2.80 грн
500+2.03 грн
1000+1.79 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
2N7002K_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2SB1197A_R1_00001 2SB1197A_R1_00001 PanJit Semiconductor 2SB1197A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
на замовлення 1961 шт:
термін постачання 14-30 дні (днів)
20+23.44 грн
28+14.98 грн
100+8.71 грн
1000+6.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SC164S_R1_00001 PanJit Semiconductor 2SC164S.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2222H_R1_00001 PanJit Semiconductor 2SC2222H.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K-AU_R1_000A1 PanJit Semiconductor 2SC2411K-AU.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K_R1_00001 PanJit Semiconductor 2SC2411K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K_R2_00001 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 484 шт:
термін постачання 14-30 дні (днів)
14+34.26 грн
22+19.75 грн
100+12.56 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
3.0SMCJ170A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ18A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ20A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ26A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ28A-AU_R2_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ30A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ30A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33CA_R1_00001 3.0SMCJ33CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ36A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ43CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ48A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ48CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ5.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ54A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ6.0A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ60CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ64A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ85CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3EZ24_AY_00001 3EZ24_AY_00001 PanJit Semiconductor 3EZ6.8_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
5KMC14AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
товару немає в наявності
В кошику  од. на суму  грн.
5KMC14CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
товару немає в наявності
В кошику  од. на суму  грн.
5KMC30AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
товару немає в наявності
В кошику  од. на суму  грн.
5KMC30CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
товару немає в наявності
В кошику  од. на суму  грн.
5KMC33AS-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ12_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ12_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ24_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ24_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ27-AU_R1_000A1 1SMB3EZ5.1-AU_SER.pdf
1SMB3EZ27-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ27_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ27_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ36-AU_R1_000A1 1SMB3EZ5.1-AU_SER.pdf
1SMB3EZ36-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ36_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ36_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SMB3EZ6.2_R1_00001 1SMB3EZ5.6_SERIES.pdf
1SMB3EZ6.2_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
1SS417TM_R1_00001 1SS417TM.pdf
1SS417TM_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Leakage current: 5µA
Load current: 0.1A
Power dissipation: 0.1W
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Max. off-state voltage: 45V
Kind of package: reel; tape
на замовлення 39930 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.62 грн
66+6.36 грн
152+2.77 грн
250+2.20 грн
500+1.98 грн
1000+1.88 грн
4000+1.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
2EZ39_R2_00001 2EZ6.8_SERIES.pdf
2EZ39_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 2W; 39V; tape; DO15; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
2EZ51_AY_00001 2EZ6.8_SERIES.pdf
2EZ51_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 2W; 51V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 51V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
2N7002K-AU_R1_000A2 2N7002K-AU.pdf
2N7002K-AU_R1_000A2
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.92 грн
68+6.19 грн
116+3.62 грн
500+2.36 грн
1000+2.04 грн
3000+1.93 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.13 грн
41+10.30 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2N7002KDW_R1_00001 2N7002KDW.pdf
2N7002KDW_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
товару немає в наявності
В кошику  од. на суму  грн.
2N7002KTB_R1_00001 2N7002KTB.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2N7002KW-AU_R1_000A1 2N7002KW-AU.pdf
2N7002KW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3289 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.42 грн
38+11.05 грн
100+6.01 грн
500+3.57 грн
1000+2.94 грн
3000+2.28 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
2N7002KW_R1_00001 2N7002KW.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2705 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.11 грн
91+4.60 грн
150+2.80 грн
500+2.03 грн
1000+1.79 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
2N7002K_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
2SB1197A_R1_00001 2SB1197A.pdf
2SB1197A_R1_00001
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
на замовлення 1961 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.44 грн
28+14.98 грн
100+8.71 грн
1000+6.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SC164S_R1_00001 2SC164S.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2222H_R1_00001 2SC2222H.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K-AU_R1_000A1 2SC2411K-AU.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K_R1_00001 2SC2411K.pdf
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SC2411K_R2_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику  од. на суму  грн.
2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 484 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.26 грн
22+19.75 грн
100+12.56 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
3.0SMCJ170A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ18A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ18A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ20A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ24CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ26A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9÷33.2V; 71.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 71.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ28A-AU_R2_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ30A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ30A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ33CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ36A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ43CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ48A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ48CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ5.0A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ54A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ58CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ6.0A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.67÷7.67V; 291.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 291.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ60CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 66.7÷76.7V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ64A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.1÷81.8V; 29.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 29.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
3.0SMCJ85CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷108.2V; 20.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 20.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
3EZ24_AY_00001 3EZ6.8_SERIES.pdf
3EZ24_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; Ammo Pack; DO15; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO15
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
5KMC14AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
товару немає в наявності
В кошику  од. на суму  грн.
5KMC14CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
товару немає в наявності
В кошику  од. на суму  грн.
5KMC30AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
товару немає в наявності
В кошику  од. на суму  грн.
5KMC30CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3÷36.8V; 103A; bidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 103A
товару немає в наявності
В кошику  од. на суму  грн.
5KMC33AS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; unidirectional; SMC; reel,tape
Manufacturer series: 5KMC
Peak pulse power dissipation: 5kW
Application: automotive industry
Semiconductor structure: unidirectional
Kind of package: reel; tape
Case: SMC
Mounting: SMD
Type of diode: TVS
Leakage current: 5µA
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 10 12 14 16 18 20 21  [ Наступна Сторінка >> ]