Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1220) > Сторінка 14 з 21
| Фото | Назва | Виробник | Інформація |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 520 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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| P6SMBJ7.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 430 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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| P6SMBJ75A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ90A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ90CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Mounting: SMD Collector current: 0.15A Power dissipation: 0.5W Collector-emitter voltage: 500V Frequency: 50MHz Polarisation: bipolar Case: SOT23 Type of transistor: NPN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 3A |
на замовлення 3093 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 3A кількість в упаковці: 1 шт |
на замовлення 3093 шт: термін постачання 14-21 дні (днів) |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 50µA Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0665G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: Ammo Pack Max. forward voltage: 1.5V Power dissipation: 70.8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF1065G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 70µA Max. forward voltage: 1.8V Max. load current: 36A Power dissipation: 104.2W Max. forward impulse current: 560A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDH20120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Leakage current: 0.1mA Max. forward voltage: 1.9V Load current: 10A x2 Max. load current: 72A Power dissipation: 209W Max. forward impulse current: 0.92kA Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry Leakage current: 0.75µA |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry Leakage current: 0.75µA кількість в упаковці: 1 шт |
на замовлення 4990 шт: термін постачання 14-21 дні (днів) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 8480 шт: термін постачання 14-21 дні (днів) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 8480 шт: термін постачання 21-30 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor | PE4105C1ES-R1 Protection diodes - arrays |
на замовлення 4200 шт: термін постачання 14-21 дні (днів) |
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| PE4309C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Application: automotive industry Mounting: SMD Case: SOT23 Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT323 Type of diode: TVS Mounting: SMD Case: SOT323 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Type of diode: TVS Mounting: SMD Case: SOD523 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4712L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Application: automotive industry Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4712L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4720L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4720L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4724L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4724L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEC3205CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
PEC3324C2A-AU-R1 Protection diodes - arrays |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuitsDescription: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC Operating temperature: -40...85°C Type of converter: DC/DC Output current: 0.75A Input voltage: 750mV DC...5.5V DC Case: SOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJA138K-AU_R1_000A1 | PanJit Semiconductor |
PJA138K-AU-R1 SMD N channel transistors |
на замовлення 2740 шт: термін постачання 14-21 дні (днів) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2675 шт: термін постачання 14-21 дні (днів) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
на замовлення 2675 шт: термін постачання 21-30 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1793 шт: термін постачання 14-21 дні (днів) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1793 шт: термін постачання 21-30 дні (днів) |
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| PJA3402_R1_00501 | PanJit Semiconductor | PJA3402-R1 SMD N channel transistors |
на замовлення 9015 шт: термін постачання 14-21 дні (днів) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
на замовлення 2334 шт: термін постачання 14-21 дні (днів) |
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| PJA3404_R1_00501 | PanJit Semiconductor | PJA3404-R1 SMD N channel transistors |
на замовлення 3904 шт: термін постачання 14-21 дні (днів) |
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| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
PJA3405-AU-R1 SMD P channel transistors |
на замовлення 2864 шт: термін постачання 14-21 дні (днів) |
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| PJA3406_R1_00001 | PanJit Semiconductor |
PJA3406-R1 SMD N channel transistors |
на замовлення 2470 шт: термін постачання 14-21 дні (днів) |
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| P6SMBJ6.0A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 25.47 грн |
| 18+ | 16.40 грн |
| 100+ | 11.07 грн |
| 500+ | 8.51 грн |
| 800+ | 7.85 грн |
| 1600+ | 7.00 грн |
| 2400+ | 6.53 грн |
| P6SMBJ6.0A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.22 грн |
| 30+ | 13.16 грн |
| 100+ | 9.22 грн |
| 500+ | 7.09 грн |
| P6SMBJ7.0CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ7.5CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.58 грн |
| 15+ | 20.82 грн |
| 100+ | 13.62 грн |
| 135+ | 8.32 грн |
| 369+ | 7.85 грн |
| 2400+ | 7.66 грн |
| 4000+ | 7.47 грн |
| P6SMBJ7.5CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.31 грн |
| 24+ | 16.71 грн |
| 100+ | 11.35 грн |
| 135+ | 6.94 грн |
| 369+ | 6.54 грн |
| P6SMBJ75A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ90A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ90CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| PBHV8050SA_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PBHV8110DA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 3A
на замовлення 3093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.98 грн |
| 38+ | 10.56 грн |
| 100+ | 6.19 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.00 грн |
| PBHV8110DA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 3A
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 3A
кількість в упаковці: 1 шт
на замовлення 3093 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.37 грн |
| 23+ | 13.16 грн |
| 100+ | 7.43 грн |
| 500+ | 5.30 грн |
| 1000+ | 4.80 грн |
| PCDB1065G1_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0465G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0665G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
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од. на суму грн.
| PCDF0665G3_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0865G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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од. на суму грн.
| PCDF1065G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 1.8V
Max. load current: 36A
Power dissipation: 104.2W
Max. forward impulse current: 560A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 1.8V
Max. load current: 36A
Power dissipation: 104.2W
Max. forward impulse current: 560A
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| PCDH20120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.1mA
Max. forward voltage: 1.9V
Load current: 10A x2
Max. load current: 72A
Power dissipation: 209W
Max. forward impulse current: 0.92kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.1mA
Max. forward voltage: 1.9V
Load current: 10A x2
Max. load current: 72A
Power dissipation: 209W
Max. forward impulse current: 0.92kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
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| PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 406.43 грн |
| 5+ | 353.61 грн |
| 30+ | 300.78 грн |
| 150+ | 295.11 грн |
| PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 338.69 грн |
| 5+ | 283.76 грн |
| 30+ | 250.65 грн |
| PCDH2065CCGB_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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| PCDH2065CCGC_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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| PCDP15120G1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
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| PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.34 грн |
| 61+ | 6.46 грн |
| 100+ | 4.02 грн |
| 390+ | 2.38 грн |
| 1072+ | 2.25 грн |
| PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 0.75µA
кількість в упаковці: 1 шт
на замовлення 4990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.20 грн |
| 37+ | 8.05 грн |
| 100+ | 4.82 грн |
| 390+ | 2.86 грн |
| 1072+ | 2.70 грн |
| 5000+ | 2.64 грн |
| 10000+ | 2.59 грн |
| PE1805C4A6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 8480 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.28 грн |
| 28+ | 10.61 грн |
| 100+ | 6.98 грн |
| 250+ | 5.97 грн |
| 500+ | 5.30 грн |
| 1000+ | 5.24 грн |
| PE1805C4A6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 8480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.73 грн |
| 47+ | 8.51 грн |
| 100+ | 5.82 грн |
| 250+ | 4.97 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.37 грн |
| PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.28 грн |
| 33+ | 9.04 грн |
| 100+ | 6.09 грн |
| 500+ | 4.98 грн |
| 1000+ | 4.63 грн |
| 3000+ | 4.39 грн |
| PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.73 грн |
| 55+ | 7.25 грн |
| 100+ | 5.08 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.86 грн |
| PE4105C1ES_R1_00001 |
Виробник: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
PE4105C1ES-R1 Protection diodes - arrays
на замовлення 4200 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 54+ | 5.69 грн |
| 674+ | 1.66 грн |
| 1852+ | 1.57 грн |
| PE4309C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
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В кошику
од. на суму грн.
| PE4312CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
товару немає в наявності
В кошику
од. на суму грн.
| PE4312ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
товару немає в наявності
В кошику
од. на суму грн.
| PE4712L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4712L1Q_R1_00201 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4720L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4720L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4724L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4724L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4728L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC1605M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC3205CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
товару немає в наявності
В кошику
од. на суму грн.
| PEC3324C2A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PEC3324C2A-AU-R1 Protection diodes - arrays
PEC3324C2A-AU-R1 Protection diodes - arrays
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.04 грн |
| 133+ | 8.42 грн |
| 364+ | 7.95 грн |
| PEC33712C2A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 22.59 грн |
| 100+ | 7.38 грн |
| 250+ | 6.53 грн |
| 500+ | 6.05 грн |
| PEC33712C2A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 29.95 грн |
| PJ30072S6_R1_00301 |
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Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
товару немає в наявності
В кошику
од. на суму грн.
| PJA138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
PJA138K-AU-R1 SMD N channel transistors
на замовлення 2740 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.39 грн |
| 490+ | 2.28 грн |
| 1345+ | 2.16 грн |
| 21000+ | 2.15 грн |
| PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2675 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.61 грн |
| 15+ | 20.43 грн |
| 100+ | 12.49 грн |
| 500+ | 9.16 грн |
| 1000+ | 8.00 грн |
| 3000+ | 6.49 грн |
| 6000+ | 5.74 грн |
| PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
на замовлення 2675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.01 грн |
| 25+ | 16.39 грн |
| 100+ | 10.40 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.67 грн |
| PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1793 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.45 грн |
| 22+ | 13.95 грн |
| 100+ | 8.48 грн |
| 500+ | 6.27 грн |
| 1000+ | 5.52 грн |
| 3000+ | 4.98 грн |
| PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.37 грн |
| 36+ | 11.19 грн |
| 100+ | 7.07 грн |
| 500+ | 5.23 грн |
| 1000+ | 4.60 грн |
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
PJA3402-R1 SMD N channel transistors
PJA3402-R1 SMD N channel transistors
на замовлення 9015 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.65 грн |
| 254+ | 4.41 грн |
| 696+ | 4.17 грн |
| PJA3403_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
на замовлення 2334 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.23 грн |
| 255+ | 4.38 грн |
| 702+ | 4.13 грн |
| PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
PJA3404-R1 SMD N channel transistors
PJA3404-R1 SMD N channel transistors
на замовлення 3904 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.76 грн |
| 225+ | 5.01 грн |
| 617+ | 4.73 грн |
| PJA3405-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
на замовлення 2864 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.86 грн |
| 196+ | 5.68 грн |
| 538+ | 5.39 грн |
| PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3406-R1 SMD N channel transistors
PJA3406-R1 SMD N channel transistors
на замовлення 2470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.67 грн |
| 220+ | 5.07 грн |
| 605+ | 4.80 грн |









