Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1398) > Сторінка 16 з 24
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMBJ Leakage current: 0.2mA Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 430 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMBJ Leakage current: 0.2mA Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| P6SMBJ78A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P6SMBJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 3093 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 3093 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
PCDH2065CCG1-T0 THT Schottky diodes |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
|
PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 2V Load current: 5A Max. load current: 40A Power dissipation: 129.3W Max. forward impulse current: 520A Max. off-state voltage: 1.2kV Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
на замовлення 2570 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2570 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PDZ5.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PE1605C4A6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE1605C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE1605C4A6_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 8480 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 8480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PE3324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4105C1ES_R1_00001 | PanJit Semiconductor | PE4105C1ES-R1 Protection diodes - arrays |
на замовлення 3900 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PE4324C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT323 Type of diode: TVS Mounting: SMD Case: SOT323 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4736L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4736L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PEC3107M1AQ_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3107S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN0603-2 Case: DFN0603-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3112M1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN1006-2 Type of diode: TVS Mounting: SMD Case: DFN1006-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3205ES-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Type of diode: TVS Mounting: SMD Case: SOD523 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 50nA Number of channels: 2 Kind of package: reel; tape Capacitance: 30pF Application: automotive industry Version: ESD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 50nA Number of channels: 2 Kind of package: reel; tape Capacitance: 30pF Application: automotive industry Version: ESD кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
| PEC33712C2A_R1_00001 | PanJit Semiconductor |
PEC33712C2A-R1 Protection diodes - arrays |
на замовлення 3013 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJ4L40W6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJA138K-AU_R1_000A1 | PanJit Semiconductor |
PJA138K-AU-R1 SMD N channel transistors |
на замовлення 2736 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3400_R1_00001 | PanJit Semiconductor |
PJA3400-R1 SMD N channel transistors |
на замовлення 2675 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3401-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1793 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PJA3401A_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1793 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PJA3401_R1_005A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 9015 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 92mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9015 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
на замовлення 2314 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3404-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJA3404A_R1_005A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; SOT23-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3765 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3765 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PJA3405-AU_R1_000A1 | PanJit Semiconductor |
PJA3405-AU-R1 SMD P channel transistors |
на замовлення 2864 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3406_R1_00001 | PanJit Semiconductor |
PJA3406-R1 SMD N channel transistors |
на замовлення 2470 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
|
PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2915 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||||
|
PJA3407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2915 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PJA3409_R1_00001 | PanJit Semiconductor |
PJA3409-R1 SMD P channel transistors |
на замовлення 2380 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3412-AU_R1_000A1 | PanJit Semiconductor |
PJA3412-AU-R1 SMD N channel transistors |
на замовлення 1594 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3412_R1_00501 | PanJit Semiconductor | PJA3412-R1 SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||||
| PJA3413_R1_00001 | PanJit Semiconductor |
PJA3413-R1 SMD P channel transistors |
на замовлення 2370 шт: термін постачання 14-21 дні (днів) |
|
| P6SMBJ7.5CA_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.67 грн |
| 16+ | 19.42 грн |
| 100+ | 12.69 грн |
| 500+ | 9.64 грн |
| 800+ | 8.76 грн |
| 1600+ | 7.97 грн |
| P6SMBJ7.5CA_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 27+ | 15.58 грн |
| 100+ | 10.58 грн |
| P6SMBJ78A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ85CA_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| PBHV8110DA-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 3093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 38+ | 10.99 грн |
| 100+ | 6.44 грн |
| 500+ | 4.59 грн |
| 1000+ | 4.17 грн |
| PBHV8110DA-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 3093 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.20 грн |
| 23+ | 13.69 грн |
| 100+ | 7.72 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.00 грн |
| PCDB1065G1_R2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0865G1_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
товару немає в наявності
В кошику
од. на суму грн.
| PCDH2065CCG1_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
PCDH2065CCG1-T0 THT Schottky diodes
PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 498.09 грн |
| 4+ | 340.49 грн |
| 10+ | 321.79 грн |
| PCDP05120G1_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
товару немає в наявності
В кошику
од. на суму грн.
| PCDP15120G1_T0_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| PDZ5.1B-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 69+ | 5.99 грн |
| 110+ | 3.74 грн |
| 500+ | 2.81 грн |
| 1000+ | 2.53 грн |
| PDZ5.1B-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2570 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 10.60 грн |
| 42+ | 7.46 грн |
| 100+ | 4.49 грн |
| 500+ | 3.38 грн |
| 1000+ | 3.03 грн |
| 5000+ | 2.72 грн |
| PDZ5.1B_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6_S1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PE1805C4A6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 8480 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.90 грн |
| 28+ | 11.04 грн |
| 100+ | 7.26 грн |
| 250+ | 6.21 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.45 грн |
| PE1805C4A6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 8480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.25 грн |
| 47+ | 8.86 грн |
| 100+ | 6.05 грн |
| 250+ | 5.17 грн |
| 500+ | 4.59 грн |
| 1000+ | 4.54 грн |
| PE1805C4C6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.90 грн |
| 33+ | 9.40 грн |
| 100+ | 6.34 грн |
| 500+ | 5.19 грн |
| 1000+ | 4.82 грн |
| 3000+ | 4.57 грн |
| PE1805C4C6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.25 грн |
| 55+ | 7.54 грн |
| 100+ | 5.28 грн |
| 500+ | 4.32 грн |
| 1000+ | 4.02 грн |
| PE3324C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| PE4105C1ES_R1_00001 |
Виробник: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
PE4105C1ES-R1 Protection diodes - arrays
на замовлення 3900 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 54+ | 5.92 грн |
| 674+ | 1.73 грн |
| 1852+ | 1.64 грн |
| PE4324C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4324C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| PE4324C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4324CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
товару немає в наявності
В кошику
од. на суму грн.
| PE4736L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4736L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC1605M1Q_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC3107M1AQ_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC3107S1Q_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC3112M1Q_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
товару немає в наявності
В кошику
од. на суму грн.
| PEC3205ES-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PEC3324C2A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 27+ | 15.58 грн |
| 100+ | 10.58 грн |
| 250+ | 9.18 грн |
| 500+ | 8.45 грн |
| 1000+ | 7.71 грн |
| 3000+ | 6.72 грн |
| PEC3324C2A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.85 грн |
| 16+ | 19.42 грн |
| 100+ | 12.69 грн |
| 250+ | 11.02 грн |
| 500+ | 10.14 грн |
| 1000+ | 9.25 грн |
| 3000+ | 8.07 грн |
| PEC33712C2A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PEC33712C2A-R1 Protection diodes - arrays
PEC33712C2A-R1 Protection diodes - arrays
на замовлення 3013 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.02 грн |
| 155+ | 7.58 грн |
| 425+ | 7.18 грн |
| 3000+ | 7.15 грн |
| PJ4L40W6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PJA138K-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
PJA138K-AU-R1 SMD N channel transistors
на замовлення 2736 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.13 грн |
| 490+ | 2.39 грн |
| 1345+ | 2.26 грн |
| PJA3400_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3400-R1 SMD N channel transistors
PJA3400-R1 SMD N channel transistors
на замовлення 2675 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.27 грн |
| 190+ | 6.18 грн |
| 520+ | 5.84 грн |
| PJA3401-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJA3401A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1793 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.43 грн |
| 22+ | 14.51 грн |
| 100+ | 8.83 грн |
| 500+ | 6.52 грн |
| 1000+ | 5.75 грн |
| 3000+ | 5.20 грн |
| PJA3401A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.20 грн |
| 36+ | 11.64 грн |
| 100+ | 7.36 грн |
| 500+ | 5.44 грн |
| 1000+ | 4.79 грн |
| PJA3401_R1_005A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 9015 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.85 грн |
| 15+ | 21.15 грн |
| 100+ | 9.18 грн |
| 250+ | 8.42 грн |
| 500+ | 7.37 грн |
| 1000+ | 6.58 грн |
| 3000+ | 4.98 грн |
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 25+ | 16.98 грн |
| 100+ | 7.65 грн |
| 250+ | 7.02 грн |
| 500+ | 6.14 грн |
| 1000+ | 5.49 грн |
| 3000+ | 4.15 грн |
| 9000+ | 3.67 грн |
| PJA3403_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
на замовлення 2314 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.21 грн |
| 255+ | 4.58 грн |
| 702+ | 4.33 грн |
| PJA3404-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJA3404A_R1_005A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; SOT23-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3765 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.15 грн |
| 13+ | 24.73 грн |
| 100+ | 10.73 грн |
| 250+ | 9.84 грн |
| 500+ | 8.66 грн |
| 1000+ | 7.68 грн |
| 3000+ | 5.81 грн |
| PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3765 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.79 грн |
| 21+ | 19.85 грн |
| 100+ | 8.94 грн |
| 250+ | 8.20 грн |
| 500+ | 7.22 грн |
| 1000+ | 6.40 грн |
| 3000+ | 4.84 грн |
| PJA3405-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
на замовлення 2864 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.30 грн |
| 196+ | 6.00 грн |
| 538+ | 5.61 грн |
| PJA3406_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3406-R1 SMD N channel transistors
PJA3406-R1 SMD N channel transistors
на замовлення 2470 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.67 грн |
| 220+ | 5.31 грн |
| 605+ | 5.02 грн |
| PJA3407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2915 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.97 грн |
| 15+ | 21.05 грн |
| 100+ | 12.60 грн |
| 500+ | 9.35 грн |
| 1000+ | 8.36 грн |
| 3000+ | 7.09 грн |
| 6000+ | 6.49 грн |
| PJA3407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2915 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 25+ | 16.89 грн |
| 100+ | 10.50 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.97 грн |
| PJA3409_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
на замовлення 2380 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.59 грн |
| 202+ | 5.80 грн |
| 554+ | 5.48 грн |
| PJA3412-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
PJA3412-AU-R1 SMD N channel transistors
на замовлення 1594 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.09 грн |
| 206+ | 5.68 грн |
| 566+ | 5.36 грн |
| 9000+ | 5.35 грн |
| PJA3412_R1_00501 |
Виробник: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.91 грн |
| 313+ | 3.74 грн |
| 859+ | 3.54 грн |
| PJA3413_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
на замовлення 2370 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.23 грн |
| 320+ | 3.65 грн |
| 880+ | 3.45 грн |







