Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1122) > Сторінка 16 з 19
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJMH190N60E1_T0_00601 | PanJit Semiconductor |
PJMH190N60E1-T0 THT N channel transistors |
на замовлення 10 шт: термін постачання 7-14 дні (днів) |
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| PJMH190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO247AD-3 Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMK040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Case: TO247AD-3 Gate-source voltage: 40V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMK074N60FRCH_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 74V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 7-14 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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| PJMP125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB Polarisation: unipolar Drain current: 30A Gate-source voltage: 30V Case: TO220AB Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJMP190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJP125N06SA-AU_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJP18N20_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Case: TO220AB Mounting: THT Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5423_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5522-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 43nC On-state resistance: 2mΩ Power dissipation: 37.5W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 141A Pulsed drain current: 564A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5522S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 108A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 41nC On-state resistance: 4.3mΩ Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 41nC On-state resistance: 4.3mΩ Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1952 шт: термін постачання 7-14 дні (днів) |
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| PJQ5544S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 101A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5544S6V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 90A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5544V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 34nC On-state resistance: 4.6mΩ Gate-source voltage: ±20V Power dissipation: 94W Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJQ5808-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain current: -31A Drain-source voltage: -30V Gate-source voltage: 25V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJS6403_S1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6 Case: SOT23-6 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -6.4A Pulsed drain current: -46A Drain-source voltage: -30V Gate charge: 7.8nC On-state resistance: 46mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJS6421_S1_00001 | PanJit Semiconductor |
PJS6421-S1 SMD P channel transistors |
на замовлення 2931 шт: термін постачання 7-14 дні (днів) |
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| PJS6601_S1_00001 | PanJit Semiconductor | PJS6601-S1 Multi channel transistors |
на замовлення 2600 шт: термін постачання 7-14 дні (днів) |
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| PJSD03TS-AU_R1_000A1 | PanJit Semiconductor |
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes |
на замовлення 2095 шт: термін постачання 7-14 дні (днів) |
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| PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes |
на замовлення 4658 шт: термін постачання 7-14 дні (днів) |
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| PJSD36W_R1_00001 | PanJit Semiconductor | PJSD36W-R1 Unidirectional TVS SMD diodes |
на замовлення 4635 шт: термін постачання 7-14 дні (днів) |
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| PJT138K-AU_R1_000A1 | PanJit Semiconductor | PJT138K-AU-R1 Multi channel transistors |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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| PJT7600_R1_00001 | PanJit Semiconductor |
PJT7600-R1 Multi channel transistors |
на замовлення 2685 шт: термін постачання 7-14 дні (днів) |
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| PJT7603_R1_00001 | PanJit Semiconductor |
PJT7603-R1 Multi channel transistors |
на замовлення 2880 шт: термін постачання 7-14 дні (днів) |
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| PJT7800_R1_00001 | PanJit Semiconductor |
PJT7800-R1 Multi channel transistors |
на замовлення 5968 шт: термін постачання 7-14 дні (днів) |
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| PJT7801_R1_00001 | PanJit Semiconductor |
PJT7801-R1 Multi channel transistors |
на замовлення 2845 шт: термін постачання 7-14 дні (днів) |
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| PJT7807_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT363 Drain-source voltage: -60V Drain current: -0.25A Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJT7838_R1_00001 | PanJit Semiconductor |
PJT7838-R1 Multi channel transistors |
на замовлення 7648 шт: термін постачання 7-14 дні (днів) |
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| PJW4P06A-AU_R2_007A1 | PanJit Semiconductor | PJW4P06A-AU-R2 SMD P channel transistors |
на замовлення 5676 шт: термін постачання 7-14 дні (днів) |
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| PJW4P06A_R2_00001 | PanJit Semiconductor |
PJW4P06A-R2 SMD P channel transistors |
на замовлення 840 шт: термін постачання 7-14 дні (днів) |
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| PJX138K_R1_00001 | PanJit Semiconductor | PJX138K-R1 Multi channel transistors |
на замовлення 3922 шт: термін постачання 7-14 дні (днів) |
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| PJX8603_R1_00001 | PanJit Semiconductor |
PJX8603-R1 Multi channel transistors |
на замовлення 1827 шт: термін постачання 7-14 дні (днів) |
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| PJX8872B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO247AD-3; TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
PSMP050N10NS2-T0 THT N channel transistors |
на замовлення 17 шт: термін постачання 7-14 дні (днів) |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 7-14 дні (днів) |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSMQC042N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH27B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123HE Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH27B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123HE Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZD22B16C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323 Mounting: SMD Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 16V Kind of package: reel; tape Application: automotive industry Semiconductor structure: common anode; double Case: SOT323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZD22B16C_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323 Mounting: SMD Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 16V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZS516V2BAS_R1_00001 | PanJit Semiconductor |
PZS516V2BAS-R1 SMD Zener diodes |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PZS51A5V1CS_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. |
| PJMH190N60E1_T0_00601 |
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Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
на замовлення 10 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 418.90 грн |
| 9+ | 138.99 грн |
| 24+ | 130.99 грн |
| PJMH190N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMK040N60EC_T0_00201 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMK074N60FRCH_T0_00201 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP060N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP080N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP099N60EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 337.06 грн |
| 10+ | 290.75 грн |
| 50+ | 234.99 грн |
| 100+ | 210.99 грн |
| 250+ | 194.99 грн |
| 500+ | 186.99 грн |
| 1000+ | 167.99 грн |
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 280.88 грн |
| 10+ | 233.32 грн |
| PJMP125N60FRC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| PJMP190N65FR2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP210N65EC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJP125N06SA-AU_T0_006A1 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJP18N20_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5423_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5522-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 141A; Idm: 564A; 37.5W
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 2mΩ
Power dissipation: 37.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 141A
Pulsed drain current: 564A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5522S6-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 108A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 110.38 грн |
| 10+ | 65.66 грн |
| 100+ | 51.33 грн |
| 250+ | 43.08 грн |
| 500+ | 38.83 грн |
| 1000+ | 35.91 грн |
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 41nC
On-state resistance: 4.3mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.45 грн |
| 10+ | 81.83 грн |
| 100+ | 61.60 грн |
| 250+ | 51.70 грн |
| 500+ | 46.60 грн |
| 1000+ | 43.10 грн |
| 3000+ | 41.20 грн |
| PJQ5544S6-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 101A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
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| PJQ5544S6V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 90A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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| PJQ5544V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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| PJQ5808-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Kind of package: reel; tape
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од. на суму грн.
| PJS6403_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -46A; 2W; SOT23-6
Case: SOT23-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6.4A
Pulsed drain current: -46A
Drain-source voltage: -30V
Gate charge: 7.8nC
On-state resistance: 46mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
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| PJS6421_S1_00001 |
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Виробник: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
PJS6421-S1 SMD P channel transistors
на замовлення 2931 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.23 грн |
| 117+ | 10.20 грн |
| 320+ | 9.60 грн |
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
PJS6601-S1 Multi channel transistors
PJS6601-S1 Multi channel transistors
на замовлення 2600 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.80 грн |
| 131+ | 9.10 грн |
| 360+ | 8.60 грн |
| PJSD03TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
на замовлення 2095 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 15.51 грн |
| 217+ | 5.46 грн |
| 597+ | 5.17 грн |
| PJSD05TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
PJSD05TS-AU-R1 Unidirectional TVS SMD diodes
на замовлення 4658 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.95 грн |
| 178+ | 6.70 грн |
| 489+ | 6.30 грн |
| PJSD36W_R1_00001 |
Виробник: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
PJSD36W-R1 Unidirectional TVS SMD diodes
на замовлення 4635 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.84 грн |
| 189+ | 6.30 грн |
| 518+ | 5.90 грн |
| PJT138K-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
PJT138K-AU-R1 Multi channel transistors
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.58 грн |
| 204+ | 5.83 грн |
| 559+ | 5.51 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7600-R1 Multi channel transistors
PJT7600-R1 Multi channel transistors
на замовлення 2685 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.15 грн |
| 169+ | 7.00 грн |
| 463+ | 6.70 грн |
| PJT7603_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
PJT7603-R1 Multi channel transistors
на замовлення 2880 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.09 грн |
| 204+ | 5.83 грн |
| 559+ | 5.51 грн |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7800-R1 Multi channel transistors
PJT7800-R1 Multi channel transistors
на замовлення 5968 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.46 грн |
| 173+ | 6.90 грн |
| 475+ | 6.50 грн |
| PJT7801_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
PJT7801-R1 Multi channel transistors
на замовлення 2845 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.37 грн |
| 169+ | 7.00 грн |
| 463+ | 6.70 грн |
| PJT7807_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT363
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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од. на суму грн.
| PJT7838_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7838-R1 Multi channel transistors
PJT7838-R1 Multi channel transistors
на замовлення 7648 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.55 грн |
| 145+ | 8.20 грн |
| 399+ | 7.70 грн |
| PJW4P06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
PJW4P06A-AU-R2 SMD P channel transistors
на замовлення 5676 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.44 грн |
| 69+ | 17.40 грн |
| 188+ | 16.50 грн |
| PJW4P06A_R2_00001 |
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Виробник: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
PJW4P06A-R2 SMD P channel transistors
на замовлення 840 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.07 грн |
| 89+ | 13.30 грн |
| 245+ | 12.60 грн |
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
PJX138K-R1 Multi channel transistors
PJX138K-R1 Multi channel transistors
на замовлення 3922 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.68 грн |
| 194+ | 6.10 грн |
| 531+ | 5.80 грн |
| PJX8603_R1_00001 |
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Виробник: PanJit Semiconductor
PJX8603-R1 Multi channel transistors
PJX8603-R1 Multi channel transistors
на замовлення 1827 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.15 грн |
| 170+ | 7.00 грн |
| 466+ | 6.60 грн |
| PJX8872B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMB055N08NS1_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMB055N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO247AD-3; TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMN015N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
PSMP050N10NS2-T0 THT N channel transistors
PSMP050N10NS2-T0 THT N channel transistors
на замовлення 17 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.06 грн |
| 9+ | 138.99 грн |
| 24+ | 130.99 грн |
| PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.53 грн |
| 10+ | 91.38 грн |
| 50+ | 80.00 грн |
| 100+ | 76.00 грн |
| 250+ | 72.00 грн |
| 500+ | 68.00 грн |
| 1000+ | 64.00 грн |
| PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 134.61 грн |
| 10+ | 73.33 грн |
| 50+ | 66.66 грн |
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC042N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMQC060N06LS1-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PSMQC060N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMQC120N06LS1-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMQC120N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PZ1AH27B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
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| PZ1AH27B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
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| PZD22B16C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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| PZD22B16C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOT323
Mounting: SMD
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Zener
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| PZS516V2BAS_R1_00001 |
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Виробник: PanJit Semiconductor
PZS516V2BAS-R1 SMD Zener diodes
PZS516V2BAS-R1 SMD Zener diodes
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 12.46 грн |
| 284+ | 4.17 грн |
| 781+ | 3.95 грн |
| 6000+ | 3.94 грн |
| PZS51A5V1CS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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од. на суму грн.




