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P6KE30A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6KE30A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE30CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6KE30CA_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE350A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6KE350A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE36CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2÷37.8V; 12A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE39CA_AY_00001 PanJit Semiconductor Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE43A_AY_00001 PanJit Semiconductor Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 40.9÷45.2V; 10.1A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 36.8V
Breakdown voltage: 40.9...45.2V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE56CA_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE6.8A_R2_00001 PanJit Semiconductor P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6SMB150A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB18A-AU_R1_006A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB18A-AU_R2_006A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB18A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB20A-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB20A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB22A_R1_00001 P6SMB22A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9÷23.1V; 20A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9...23.1V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB27A_R1_00001 P6SMB27A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 25.7÷28.4V; 16A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB300A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 285...315V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6SMB30A-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB30A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB30CA-AU_R1_000A1 P6SMB30CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
19+23.95 грн
30+13.92 грн
100+10.54 грн
500+8.98 грн
800+8.65 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
P6SMB33A-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB33A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB33CA-AU_R1_000A1 P6SMB33CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB33CA_R1_00001 P6SMB33CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB36A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB36CA-AU_R1_000A1 P6SMB36CA-AU_R1_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
12+39.91 грн
18+23.14 грн
100+15.32 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
P6SMB39CA-AU_R2_000A1 P6SMB39CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
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P6SMB39CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB56A-AU_R2_000A1 P6SMB56A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
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P6SMB56A_R1_00001 P6SMB56A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
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P6SMB56CA-AU_R2_000A1 P6SMB56CA-AU_R2_000A1 PanJit Semiconductor P6SMB-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6SMB6.8A_R1_00001 P6SMB6.8A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMB6.8CA_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMB62CA-AU_R2_000A1 P6SMB62CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 58.9÷65.1V; 7.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMB62CA_R2_00001 P6SMB62CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 58.9÷65.1V; 7.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
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P6SMB75A_R1_00001 PanJit Semiconductor P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.3÷78.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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P6SMBJ100A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷123V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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 Мінімальне замовлення: 800 шт
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P6SMBJ10A-AU_R2_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ10A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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P6SMBJ10CA_R1_00001 P6SMBJ10CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
на замовлення 760 шт:
термін постачання 14-30 дні (днів)
20+22.17 грн
29+14.25 грн
100+10.21 грн
250+8.89 грн
500+8.07 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
P6SMBJ11CA_R2_00001 P6SMBJ11CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ120A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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 Мінімальне замовлення: 800 шт
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P6SMBJ12A_R1_00001 P6SMBJ12A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ12CA-AU_R1_000A1 P6SMBJ12CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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P6SMBJ12CA_R1_00001 P6SMBJ12CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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P6SMBJ130A_R1_00001 P6SMBJ130A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 144÷159V; 2.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ13A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ13A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ13CA-AU_R1_000A1 P6SMBJ13CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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P6SMBJ13CA_R1_00001 P6SMBJ13CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ14A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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 Мінімальне замовлення: 3000 шт
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P6SMBJ14A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ150A_R1_00001 P6SMBJ150A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷185V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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 Мінімальне замовлення: 800 шт
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P6SMBJ150CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷185V; 2.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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P6SMBJ15A-AU_R1_000A1 P6SMBJ15A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMBJ15A_R1_00001 P6SMBJ15A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMBJ15CA-AU_R1_000A1 P6SMBJ15CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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P6KE30A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3000 шт
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P6KE30A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE30CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE30CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 14.4A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE350A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE350A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 332...368V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 1.3A
Max. off-state voltage: 300V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE36CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2÷37.8V; 12A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE39CA_AY_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; Ammo Pack; 0.6kW
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE43A_AY_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 40.9÷45.2V; 10.1A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 36.8V
Breakdown voltage: 40.9...45.2V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE56CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE6.8A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6SMB150A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB18A-AU_R1_006A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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В кошику  од. на суму  грн.
P6SMB18A-AU_R2_006A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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В кошику  од. на суму  грн.
P6SMB18A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB20A-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB20A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB22A_R1_00001 P6SMB_SERIES.pdf
P6SMB22A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20.9÷23.1V; 20A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9...23.1V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB27A_R1_00001 P6SMB_SERIES.pdf
P6SMB27A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 25.7÷28.4V; 16A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB300A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 285÷315V; 1.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 256V
Breakdown voltage: 285...315V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB30A-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB30A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB30CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB30CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+23.95 грн
30+13.92 грн
100+10.54 грн
500+8.98 грн
800+8.65 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
P6SMB33A-AU_R1_000A1 P6SMB-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB33A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB33CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB33CA_R1_00001 P6SMB_SERIES.pdf
P6SMB33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB36A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB36CA-AU_R1_000A1 P6SMB-AU_SERIES.pdf
P6SMB36CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+39.91 грн
18+23.14 грн
100+15.32 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
P6SMB39CA-AU_R2_000A1
P6SMB39CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB39CA_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB56A-AU_R2_000A1
P6SMB56A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB56A_R1_00001 P6SMB_SERIES.pdf
P6SMB56A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB56CA-AU_R2_000A1 P6SMB-AU_SERIES.pdf
P6SMB56CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.2÷58.8V; 7.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Application: automotive industry
Leakage current: 1µA
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB6.8A_R1_00001 P6SMB_SERIES.pdf
P6SMB6.8A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB6.8CA_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMB62CA-AU_R2_000A1
P6SMB62CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 58.9÷65.1V; 7.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB62CA_R2_00001
P6SMB62CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 58.9÷65.1V; 7.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 53V
Breakdown voltage: 58.9...65.1V
Max. forward impulse current: 7.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB75A_R1_00001 P6SMB_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.3÷78.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ100A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷123V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ10A-AU_R2_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ10A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ10CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
на замовлення 760 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.17 грн
29+14.25 грн
100+10.21 грн
250+8.89 грн
500+8.07 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
P6SMBJ11CA_R2_00001
P6SMBJ11CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ120A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ12A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ12A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ12CA-AU_R1_000A1
P6SMBJ12CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ12CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ12CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ130A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ130A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 144÷159V; 2.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ13A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ13A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ13CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ13CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ13CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ13CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 27.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 27.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ14A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ14A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.8A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ150A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ150A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷185V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ150CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷185V; 2.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ15A-AU_R1_000A1
P6SMBJ15A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ15A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ15A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ15CA-AU_R1_000A1
P6SMBJ15CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
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