Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1216) > Сторінка 16 з 21
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMH190N60E1_T0_00601 | PanJit Semiconductor |
PJMH190N60E1-T0 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A кількість в упаковці: 1 шт |
на замовлення 116 шт: термін постачання 14-21 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 69A |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMP390N65EC_T0_00001 | PanJit Semiconductor |
PJMP390N65EC-T0 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMP900N60EC_T0_00001 | PanJit Semiconductor |
PJMP900N60EC-T0 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMP990N65EC_T0_00001 | PanJit Semiconductor |
PJMP990N65EC-T0 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ1908-AU_R1_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ1908-AU_R1_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ1908_R1_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ1908_R1_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ2460-AU_R1_000A1 | PanJit Semiconductor |
PJQ2460-AU-R1 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4401P-AU_R2_000A1 | PanJit Semiconductor |
PJQ4401P-AU-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4403P_R2_00001 | PanJit Semiconductor |
PJQ4403P-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4433EP-AU_R2_002A1 | PanJit Semiconductor | PJQ4433EP-AU-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4433EP_R2_00201 | PanJit Semiconductor | PJQ4433EP-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -41A Pulsed drain current: -138A Power dissipation: 13.5W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -41A Pulsed drain current: -138A Power dissipation: 13.5W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4437EP_R2_00201 | PanJit Semiconductor | PJQ4437EP-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4439EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W Kind of package: reel Mounting: SMD Case: DFN3333-8 Kind of channel: enhancement Type of transistor: P-MOSFET Pulsed drain current: -90A Drain current: -30A Drain-source voltage: -30V Gate charge: 22nC On-state resistance: 19.1mΩ Power dissipation: 10W Gate-source voltage: ±25V Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4439EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W Kind of package: reel Mounting: SMD Case: DFN3333-8 Kind of channel: enhancement Type of transistor: P-MOSFET Pulsed drain current: -90A Drain current: -30A Drain-source voltage: -30V Gate charge: 22nC On-state resistance: 19.1mΩ Power dissipation: 10W Gate-source voltage: ±25V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4465AP-AU_R2_000A1 | PanJit Semiconductor |
PJQ4465AP-AU-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4524P-AU_R2_002A1 | PanJit Semiconductor | PJQ4524P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4526P-AU_R2_002A1 | PanJit Semiconductor | PJQ4526P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4528P-AU_R2_002A1 | PanJit Semiconductor | PJQ4528P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4530P-AU_R2_002A1 | PanJit Semiconductor | PJQ4530P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4534P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 9.3mΩ Power dissipation: 10.7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 152A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4534P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 9.3mΩ Power dissipation: 10.7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 152A Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4534P_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 8.9mΩ Power dissipation: 7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 144A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4534P_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 8.9mΩ Power dissipation: 7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 144A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4546P-AU_R2_002A1 | PanJit Semiconductor |
PJQ4546P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor |
PJQ4546VP-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4548P-AU_R2_002A1 | PanJit Semiconductor |
PJQ4548P-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor |
PJQ4548VP-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4576AP-AU_R2_002A1 | PanJit Semiconductor |
PJQ4576AP-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4848P_R2_00001 | PanJit Semiconductor |
PJQ4848P-R2 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5439E-AU_R2_006A1 | PanJit Semiconductor |
PJQ5439E-AU-R2 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5520-AU_R2_002A1 | PanJit Semiconductor | PJQ5520-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5522-AU_R2_002A1 | PanJit Semiconductor | PJQ5522-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5528-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 11nC On-state resistance: 6mΩ Power dissipation: 15.6W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 244A Application: automotive industry Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5528-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 11nC On-state resistance: 6mΩ Power dissipation: 15.6W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 244A Application: automotive industry Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5534-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 9.3mΩ Power dissipation: 11.5W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 156A Case: DFN5060-8 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5534-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 9.3mΩ Power dissipation: 11.5W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 156A Case: DFN5060-8 Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5540V-AU_R2_002A1 | PanJit Semiconductor |
PJQ5540V-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5542V-AU_R2_002A1 | PanJit Semiconductor |
PJQ5542V-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Power dissipation: 100W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Power dissipation: 100W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1952 шт: термін постачання 14-21 дні (днів) |
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| PJQ5544V-AU_R2_002A1 | PanJit Semiconductor |
PJQ5544V-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5546-AU_R2_002A1 | PanJit Semiconductor |
PJQ5546-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5546V-AU_R2_002A1 | PanJit Semiconductor |
PJQ5546V-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5548-AU_R2_002A1 | PanJit Semiconductor |
PJQ5548-AU-R2 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. |
| PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH120N60EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJMH120N60EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMH190N60E1_T0_00601 |
|
Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJMP120N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
на замовлення 116 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 344.88 грн |
| 7+ | 179.07 грн |
| 18+ | 162.96 грн |
| PJMP120N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 287.40 грн |
| 7+ | 143.70 грн |
| 18+ | 135.80 грн |
| PJMP210N65EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJMP210N65EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP390N65EC_T0_00001 |
|
Виробник: PanJit Semiconductor
PJMP390N65EC-T0 THT N channel transistors
PJMP390N65EC-T0 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJMP900N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
PJMP900N60EC-T0 THT N channel transistors
PJMP900N60EC-T0 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJMP990N65EC_T0_00001 |
|
Виробник: PanJit Semiconductor
PJMP990N65EC-T0 THT N channel transistors
PJMP990N65EC-T0 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908_R1_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ1908_R1_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ2460-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
PJQ2460-AU-R1 SMD N channel transistors
PJQ2460-AU-R1 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4401P-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
PJQ4401P-AU-R2 SMD P channel transistors
PJQ4401P-AU-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4403P_R2_00001 |
|
Виробник: PanJit Semiconductor
PJQ4403P-R2 SMD P channel transistors
PJQ4403P-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4433EP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4433EP-AU-R2 SMD P channel transistors
PJQ4433EP-AU-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4433EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4433EP-R2 SMD P channel transistors
PJQ4433EP-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4437EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4437EP-R2 SMD P channel transistors
PJQ4437EP-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4439EP_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4439EP_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4465AP-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
PJQ4465AP-AU-R2 SMD P channel transistors
PJQ4465AP-AU-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4524P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4524P-AU-R2 SMD N channel transistors
PJQ4524P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4526P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4526P-AU-R2 SMD N channel transistors
PJQ4526P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4528P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4528P-AU-R2 SMD N channel transistors
PJQ4528P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4530P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4530P-AU-R2 SMD N channel transistors
PJQ4530P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4546P-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ4546P-AU-R2 SMD N channel transistors
PJQ4546P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4546VP-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ4546VP-AU-R2 SMD N channel transistors
PJQ4546VP-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4548P-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ4548P-AU-R2 SMD N channel transistors
PJQ4548P-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4548VP-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ4548VP-AU-R2 SMD N channel transistors
PJQ4548VP-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4576AP-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ4576AP-AU-R2 SMD N channel transistors
PJQ4576AP-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4848P_R2_00001 |
|
Виробник: PanJit Semiconductor
PJQ4848P-R2 Multi channel transistors
PJQ4848P-R2 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5439E-AU_R2_006A1 |
|
Виробник: PanJit Semiconductor
PJQ5439E-AU-R2 SMD P channel transistors
PJQ5439E-AU-R2 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5520-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ5520-AU-R2 SMD N channel transistors
PJQ5520-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5522-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ5522-AU-R2 SMD N channel transistors
PJQ5522-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5528-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5528-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Polarisation: unipolar
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5534-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 11.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 156A
Case: DFN5060-8
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 11.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 156A
Case: DFN5060-8
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5534-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 11.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 156A
Case: DFN5060-8
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 156A; 11.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 11.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 156A
Case: DFN5060-8
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5540V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5540V-AU-R2 SMD N channel transistors
PJQ5540V-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5542V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5542V-AU-R2 SMD N channel transistors
PJQ5542V-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.19 грн |
| 10+ | 74.38 грн |
| 29+ | 32.53 грн |
| 79+ | 30.79 грн |
| PJQ5544-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.83 грн |
| 10+ | 92.68 грн |
| 29+ | 39.04 грн |
| 79+ | 36.95 грн |
| PJQ5544V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5544V-AU-R2 SMD N channel transistors
PJQ5544V-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5546-AU-R2 SMD N channel transistors
PJQ5546-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5546V-AU-R2 SMD N channel transistors
PJQ5546V-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5548-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
PJQ5548-AU-R2 SMD N channel transistors
PJQ5548-AU-R2 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.