Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (726) > Сторінка 8 з 13
| Фото | Назва | Виробник | Інформація |
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MMSZ5258A_R1_00001 | PanJit Semiconductor |
 Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMSZ5258B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMSZ5258BS_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 36V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMSZ5258B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| P2AL30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 4.1A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 0.2kW Application: automotive industry Manufacturer series: P2AL Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P2AL30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 4.1A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 0.2kW Manufacturer series: P2AL Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4FL30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 8.3A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 0.4kW Application: automotive industry Manufacturer series: P4FL Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4FL30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 8.3A Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Peak pulse power dissipation: 0.4kW Manufacturer series: P4FL Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMA24A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 22.8÷25.2V; 13A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P4SMA |
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В кошику од. на суму грн. | |||||||||||||
| P4SMA6.8A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.45÷7.14V; 40A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ100A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 100V Semiconductor structure: unidirectional Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA Breakdown voltage: 111...123V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ120A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ12A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ12A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ13A-AU_R2_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ13A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ180A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 198÷222V; 1.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 198...222V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ18A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ18A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ18CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ18CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ20CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ220A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 242...272V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ22A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ22A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ24A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ24A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P4SMAJ24CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
на замовлення 1740 шт: термін постачання 14-30 дні (днів) |
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| P4SMAJ28A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ30A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P4SMAJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
на замовлення 1730 шт: термін постачання 14-30 дні (днів) |
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| P4SMAJ33A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P4SMAJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
на замовлення 1770 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ33CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| P4SMAJ33CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ36A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ36A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ40A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ40A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||||
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
на замовлення 7510 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1602 шт: термін постачання 14-30 дні (днів) |
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| P4SMAJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMAJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Application: automotive industry Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ6.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1mA Manufacturer series: P4SMAJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
| P4SMAJ8.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 29.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
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В кошику од. на суму грн. | |||||||||||||
| P6AFC14A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC Mounting: SMD Kind of package: reel; tape Case: SMAF-C Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Peak pulse power dissipation: 0.6kW Application: automotive industry Manufacturer series: P6AFC |
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В кошику од. на суму грн. | |||||||||||||
| P6AFC28A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMAF-C; P6AFC Mounting: SMD Application: automotive industry Case: SMAF-C Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. forward impulse current: 13.2A Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Peak pulse power dissipation: 0.6kW Manufacturer series: P6AFC |
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В кошику од. на суму грн. | |||||||||||||
| P6KE10CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; 0.6kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 9.5...10.5V Max. forward impulse current: 41A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 20µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||
| P6KE12CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE Type of diode: TVS Max. off-state voltage: 10.2V Breakdown voltage: 11.4...12.6V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||
| P6KE13A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated Case: DO15 Leakage current: 1µA Max. off-state voltage: 11.1V Breakdown voltage: 12.4...13.7V Max. forward impulse current: 33A Peak pulse power dissipation: 0.6kW |
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В кошику од. на суму грн. | |||||||||||||
| P6KE15A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated Case: DO15 Leakage current: 1µA Max. forward impulse current: 28A Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Peak pulse power dissipation: 0.6kW |
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В кошику од. на суму грн. | |||||||||||||
| P6KE15A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Manufacturer series: P6KE Features of semiconductor devices: glass passivated Case: DO15 Leakage current: 1µA Max. forward impulse current: 28A Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P6KE160A_AY_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||
| P6KE160A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152...168V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P6KE16CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 13.6V Breakdown voltage: 15.2...16.8V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Manufacturer series: P6KE Max. forward impulse current: 27A Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| MMSZ5258A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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В кошику
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| MMSZ5258B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| MMSZ5258BS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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В кошику
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| MMSZ5258B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 36V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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В кошику
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| P2AL30A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 4.1A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.2kW
Application: automotive industry
Manufacturer series: P2AL
Case: SOD123F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 4.1A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.2kW
Application: automotive industry
Manufacturer series: P2AL
Case: SOD123F
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| P2AL30A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 4.1A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.2kW
Manufacturer series: P2AL
Case: SOD123F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 33.3÷36.8V; 4.1A; unidirectional; SOD123F; P2AL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 4.1A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.2kW
Manufacturer series: P2AL
Case: SOD123F
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| P4FL30A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4FL
Case: SOD123F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4FL
Case: SOD123F
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| P4FL30A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4FL
Case: SOD123F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SOD123F; P4FL
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 8.3A
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4FL
Case: SOD123F
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| P4SMA24A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8÷25.2V; 13A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.8÷25.2V; 13A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P4SMA
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| P4SMA6.8A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.45÷7.14V; 40A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.45÷7.14V; 40A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P4SMA
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| P4SMAJ100A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Breakdown voltage: 111...123V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Semiconductor structure: unidirectional
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Breakdown voltage: 111...123V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ120A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ12A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ12A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ13A-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ13A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ180A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 198÷222V; 1.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...222V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 198÷222V; 1.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...222V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ18A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ18A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ18CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ18CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ20CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ220A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ22A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ22A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ24A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ24A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ24CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1740 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.20 грн |
| 250+ | 13.35 грн |
| 500+ | 11.66 грн |
| 1000+ | 9.30 грн |
| P4SMAJ28A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ28A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ30A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ30A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 1730 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.20 грн |
| 37+ | 11.49 грн |
| 100+ | 6.93 грн |
| 500+ | 5.24 грн |
| P4SMAJ33A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ33A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ33CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.56 грн |
| 250+ | 11.24 грн |
| 500+ | 9.80 грн |
| 1000+ | 7.86 грн |
| P4SMAJ33CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ33CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ36A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ36A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ40A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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| P4SMAJ40A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 7510 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.83 грн |
| 48+ | 8.87 грн |
| 100+ | 6.59 грн |
| 500+ | 6.00 грн |
| 1000+ | 5.49 грн |
| 1800+ | 4.90 грн |
| P4SMAJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.11 грн |
| 39+ | 10.90 грн |
| 100+ | 7.77 грн |
| 250+ | 6.93 грн |
| 500+ | 6.42 грн |
| P4SMAJ58A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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од. на суму грн.
| P4SMAJ58A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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од. на суму грн.
| P4SMAJ58CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ58CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ6.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P4SMAJ6.5CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P4SMAJ8.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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| P6AFC14A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Kind of package: reel; tape
Case: SMAF-C
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Manufacturer series: P6AFC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Kind of package: reel; tape
Case: SMAF-C
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Manufacturer series: P6AFC
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| P6AFC28A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Application: automotive industry
Case: SMAF-C
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 13.2A
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6AFC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMAF-C; P6AFC
Mounting: SMD
Application: automotive industry
Case: SMAF-C
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. forward impulse current: 13.2A
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6AFC
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| P6KE10CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5÷10.5V; 41A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5...10.5V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 20µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE12CA_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE13A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 33A
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 12.4÷13.7V; 33A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 33A
Peak pulse power dissipation: 0.6kW
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| P6KE15A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Peak pulse power dissipation: 0.6kW
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| P6KE15A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Case: DO15
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Peak pulse power dissipation: 0.6kW
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| P6KE160A_AY_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE160A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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| P6KE16CA_AY_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 27A
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 27A
Features of semiconductor devices: glass passivated
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