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1N5342B_R2_00001 1N5342B_R2_00001 PanJit Semiconductor 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5359B_AY_00001 1N5359B_AY_00001 PanJit Semiconductor 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; Ammo Pack; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5359B_R2_00001 1N5359B_R2_00001 PanJit Semiconductor 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5408G_R2_00001 1N5408G_R2_00001 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 4970 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
64+6.68 грн
69+6.19 грн
100+5.89 грн
250+5.30 грн
500+5.19 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5938B_AY_00001 1N5938B_AY_00001 PanJit Semiconductor 1N5921B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 36V; Ammo Pack; DO41; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
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1SMA4733_R1_00001 1SMA4733_R1_00001 PanJit Semiconductor 1SMA4728_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
17+27.30 грн
26+16.82 грн
100+10.73 грн
500+8.37 грн
1000+7.60 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1SMA4746_R1_00001 1SMA4746_R1_00001 PanJit Semiconductor 1SMA4728_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 177 шт:
термін постачання 14-30 дні (днів)
22+20.93 грн
30+14.28 грн
100+8.45 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
1SMA5929-AU_R1_000A1 1SMA5929-AU_R1_000A1 PanJit Semiconductor 1SMA5914-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Application: automotive industry
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1SMA5929_R1_00001 1SMA5929_R1_00001 PanJit Semiconductor 1SMA5921_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
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1SS417TM_R1_00001 1SS417TM_R1_00001 PanJit Semiconductor 1SS417TM.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Leakage current: 5µA
Load current: 0.1A
Power dissipation: 0.1W
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Max. off-state voltage: 45V
Kind of package: reel; tape
на замовлення 39930 шт:
термін постачання 14-30 дні (днів)
36+12.74 грн
66+6.42 грн
152+2.80 грн
250+2.22 грн
500+2.00 грн
1000+1.90 грн
4000+1.87 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
2N7002K-AU_R1_000A2 2N7002K-AU_R1_000A2 PanJit Semiconductor 2N7002K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
46+10.01 грн
68+6.25 грн
116+3.65 грн
500+2.38 грн
1000+2.06 грн
3000+1.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 3087 шт:
термін постачання 14-30 дні (днів)
27+17.29 грн
41+10.39 грн
100+6.47 грн
250+5.29 грн
500+4.51 грн
1000+3.83 грн
3000+2.92 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2N7002KDW_R1_00001 2N7002KDW_R1_00001 PanJit Semiconductor 2N7002KDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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2N7002KTB_R1_00001 PanJit Semiconductor 2N7002KTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KW-AU_R1_000A1 2N7002KW-AU_R1_000A1 PanJit Semiconductor 2N7002KW-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3549 шт:
термін постачання 14-30 дні (днів)
32+14.56 грн
38+11.15 грн
100+6.07 грн
500+3.61 грн
1000+2.97 грн
3000+2.30 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
2N7002KW_R1_00001 PanJit Semiconductor 2N7002KW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002K_R1_00001 2N7002K_R1_00001 PanJit Semiconductor 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2865 шт:
термін постачання 14-30 дні (днів)
56+8.19 грн
91+4.65 грн
150+2.82 грн
500+2.05 грн
1000+1.81 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
2N7002K_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2SB1197A_R1_00001 2SB1197A_R1_00001 PanJit Semiconductor 2SB1197A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
на замовлення 2171 шт:
термін постачання 14-30 дні (днів)
20+23.66 грн
28+15.13 грн
100+8.79 грн
1000+6.08 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit Semiconductor 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 716 шт:
термін постачання 14-30 дні (днів)
14+34.58 грн
22+19.94 грн
100+12.68 грн
500+9.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
3.0SMCJ13A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ16A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ170A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ18A-AU_R1_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ18A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ20A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ24A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ28A-AU_R2_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R2_000A1 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ36A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ43CA-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ48A_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ5.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 PanJit Semiconductor 3.0SMCJ10A-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ54CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ54CA_R1_00001 PanJit Semiconductor 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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5KMC14CAS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC45AS-AU_R1_000A1 PanJit Semiconductor 5KMC12AS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 50÷55.3V; 68.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 68.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KP36CA_R2_00001 PanJit Semiconductor 5KP_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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B6S_R2_00001 B6S_R2_00001 PanJit Semiconductor B1S_SERIES.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward voltage: 1V
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Case: MDI
Features of semiconductor devices: glass passivated
на замовлення 2147 шт:
термін постачання 14-30 дні (днів)
23+20.02 грн
35+12.17 грн
100+8.87 грн
500+6.68 грн
1000+5.75 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU_R1_000A1 PanJit Semiconductor BAS16TS-AU.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28640 шт:
термін постачання 14-30 дні (днів)
167+2.73 грн
228+1.86 грн
236+1.79 грн
500+1.52 грн
1000+1.51 грн
Мінімальне замовлення: 167
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS_R1_00001 PanJit Semiconductor BAS16TS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
103+4.14 грн
172+2.46 грн
250+1.94 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_R1_00001 PanJit Semiconductor BAS16TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
50+9.10 грн
59+7.18 грн
100+5.96 грн
250+4.77 грн
500+4.26 грн
1000+3.57 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS21_R1_00001 PanJit Semiconductor BAS16_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
72+6.37 грн
122+3.46 грн
166+2.56 грн
500+1.94 грн
1000+1.66 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS316_R1_00001 BAS316_R1_00001 PanJit Semiconductor BAS316.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit Semiconductor BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
36+12.74 грн
51+8.37 грн
65+6.59 грн
100+4.47 грн
500+3.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40SDW_R1_00001 PanJit Semiconductor BAS40TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 12000 шт:
термін постачання 14-30 дні (днів)
84+5.46 грн
107+3.97 грн
116+3.65 грн
122+3.47 грн
500+3.20 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40S_R1_00001 PanJit Semiconductor BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2498 шт:
термін постачання 14-30 дні (днів)
50+9.10 грн
85+4.99 грн
148+2.87 грн
500+2.04 грн
1000+1.77 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_R1_00001 PanJit Semiconductor BAS70TW_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
на замовлення 1834 шт:
термін постачання 14-30 дні (днів)
42+10.92 грн
64+6.68 грн
105+4.05 грн
500+3.44 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAS70WS_R1_00001 BAS70WS_R1_00001 PanJit Semiconductor BAS70WS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
на замовлення 3241 шт:
термін постачання 14-30 дні (днів)
50+9.10 грн
91+4.65 грн
166+2.56 грн
500+2.15 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAT42WS_R1_00001 BAT42WS_R1_00001 PanJit Semiconductor BAT42WS_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3889 шт:
термін постачання 14-30 дні (днів)
42+10.92 грн
73+5.83 грн
145+2.93 грн
500+2.08 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAT42W_R1_00001 BAT42W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
91+4.65 грн
136+3.11 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT43W_R1_00001 BAT43W_R1_00001 PanJit Semiconductor BAT42W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 609 шт:
термін постачання 14-30 дні (днів)
63+7.28 грн
95+4.48 грн
146+2.90 грн
500+2.30 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54A_R1_00001 PanJit Semiconductor BAT54_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
72+6.37 грн
122+3.46 грн
180+2.35 грн
500+1.73 грн
1000+1.50 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54C-AU_R1_000A1 PanJit Semiconductor BAT54-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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BAT54CTB6_R1_00001 BAT54CTB6_R1_00001 PanJit Semiconductor BAT54TB6_BAT54CTB6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
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1N5342B_R2_00001 1N5338B_SERIES.pdf
1N5342B_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5359B_AY_00001 1N5338B_SERIES.pdf
1N5359B_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; Ammo Pack; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5359B_R2_00001 1N5338B_SERIES.pdf
1N5359B_R2_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; tape; DO201AE; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: tape
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5408G_R2_00001
1N5408G_R2_00001
Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 4970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
64+6.68 грн
69+6.19 грн
100+5.89 грн
250+5.30 грн
500+5.19 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5938B_AY_00001 1N5921B_SERIES.pdf
1N5938B_AY_00001
Виробник: PanJit Semiconductor
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 36V; Ammo Pack; DO41; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
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1SMA4733_R1_00001 1SMA4728_SERIES.pdf
1SMA4733_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.30 грн
26+16.82 грн
100+10.73 грн
500+8.37 грн
1000+7.60 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1SMA4746_R1_00001 1SMA4728_SERIES.pdf
1SMA4746_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 177 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.93 грн
30+14.28 грн
100+8.45 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
1SMA5929-AU_R1_000A1 1SMA5914-AU_SERIES.pdf
1SMA5929-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Application: automotive industry
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1SMA5929_R1_00001 1SMA5921_SERIES.pdf
1SMA5929_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
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1SS417TM_R1_00001 1SS417TM.pdf
1SS417TM_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 45V; 0.1A; reel,tape; 100mW
Case: SOD923
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Leakage current: 5µA
Load current: 0.1A
Power dissipation: 0.1W
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Max. off-state voltage: 45V
Kind of package: reel; tape
на замовлення 39930 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.74 грн
66+6.42 грн
152+2.80 грн
250+2.22 грн
500+2.00 грн
1000+1.90 грн
4000+1.87 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
2N7002K-AU_R1_000A2 2N7002K-AU.pdf
2N7002K-AU_R1_000A2
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.01 грн
68+6.25 грн
116+3.65 грн
500+2.38 грн
1000+2.06 грн
3000+1.95 грн
Мінімальне замовлення: 46
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 3087 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.29 грн
41+10.39 грн
100+6.47 грн
250+5.29 грн
500+4.51 грн
1000+3.83 грн
3000+2.92 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2N7002KDW_R1_00001 2N7002KDW.pdf
2N7002KDW_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
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2N7002KTB_R1_00001 2N7002KTB.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KW-AU_R1_000A1 2N7002KW-AU.pdf
2N7002KW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3549 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.56 грн
38+11.15 грн
100+6.07 грн
500+3.61 грн
1000+2.97 грн
3000+2.30 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
2N7002KW_R1_00001 2N7002KW.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT323
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2865 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.19 грн
91+4.65 грн
150+2.82 грн
500+2.05 грн
1000+1.81 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
2N7002K_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2SB1197A_R1_00001 2SB1197A.pdf
2SB1197A_R1_00001
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
на замовлення 2171 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.66 грн
28+15.13 грн
100+8.79 грн
1000+6.08 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 5A
Collector-emitter voltage: 50V
Current gain: 300...900
Frequency: 250MHz
Polarisation: bipolar
на замовлення 716 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.58 грн
22+19.94 грн
100+12.68 грн
500+9.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
3.0SMCJ13A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ15CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 16.7÷19.2V; 123A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 123A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ16A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 17.8÷20.5V; 115.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 115.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ170A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 189÷217.5V; 11A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ18A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ18A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ20A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ24A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
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3.0SMCJ28A-AU_R2_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷35.8V; 66A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 66A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ33A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ36A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40÷46V; 51.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 51.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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3.0SMCJ43CA-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 47.8÷54.9V; 43.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 43.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ48A_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3÷61.3V; 38.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ5.0A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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3.0SMCJ54A-AU_R1_000A1 3.0SMCJ10A-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ54CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ54CA_R1_00001 3.0SMCJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 60÷69V; 34.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 34.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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5KMC14CAS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 15.6÷17.2V; 216A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 216A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KMC45AS-AU_R1_000A1 5KMC12AS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 50÷55.3V; 68.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 68.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: 5KMC
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5KP36CA_R2_00001 5KP_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 40÷46V; 85A; bidirectional; P600; 5kW; tape; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 6µA
Kind of package: tape
Manufacturer series: 5KP
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B6S_R2_00001 B1S_SERIES.pdf
B6S_R2_00001
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.8A
Max. forward voltage: 1V
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Case: MDI
Features of semiconductor devices: glass passivated
на замовлення 2147 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+20.02 грн
35+12.17 грн
100+8.87 грн
500+6.68 грн
1000+5.75 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAS16TS-AU_R1_000A1 BAS16TS-AU.pdf
BAS16TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
на замовлення 28640 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
167+2.73 грн
228+1.86 грн
236+1.79 грн
500+1.52 грн
1000+1.51 грн
Мінімальне замовлення: 167
В кошику  од. на суму  грн.
BAS16TS_R1_00001 BAS16TS.pdf
BAS16TS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
103+4.14 грн
172+2.46 грн
250+1.94 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAS16TW_R1_00001 BAS16TW_SERIES.pdf
BAS16TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2824 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.10 грн
59+7.18 грн
100+5.96 грн
250+4.77 грн
500+4.26 грн
1000+3.57 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS16_SERIES.pdf
BAS21_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.37 грн
122+3.46 грн
166+2.56 грн
500+1.94 грн
1000+1.66 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS316_R1_00001 BAS316.pdf
BAS316_R1_00001
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
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BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.74 грн
51+8.37 грн
65+6.59 грн
100+4.47 грн
500+3.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BAS40SDW_R1_00001 BAS40TW_SERIES.pdf
BAS40SDW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 12000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
84+5.46 грн
107+3.97 грн
116+3.65 грн
122+3.47 грн
500+3.20 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2498 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.10 грн
85+4.99 грн
148+2.87 грн
500+2.04 грн
1000+1.77 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAS70TW_R1_00001 BAS70TW_SERIES.pdf
BAS70TW_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
на замовлення 1834 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.92 грн
64+6.68 грн
105+4.05 грн
500+3.44 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAS70WS_R1_00001 BAS70WS.pdf
BAS70WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
на замовлення 3241 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.10 грн
91+4.65 грн
166+2.56 грн
500+2.15 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAT42WS_R1_00001 BAT42WS_SERIES.pdf
BAT42WS_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 3889 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.92 грн
73+5.83 грн
145+2.93 грн
500+2.08 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAT42W_R1_00001 BAT42W_SERIES.pdf
BAT42W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
91+4.65 грн
136+3.11 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT43W_R1_00001 BAT42W_SERIES.pdf
BAT43W_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 609 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.28 грн
95+4.48 грн
146+2.90 грн
500+2.30 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BAT54A_R1_00001 BAT54_SERIES.pdf
BAT54A_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2224 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.37 грн
122+3.46 грн
180+2.35 грн
500+1.73 грн
1000+1.50 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54-AU_SERIES.pdf
BAT54C-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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BAT54CTB6_R1_00001 BAT54TB6_BAT54CTB6.pdf
BAT54CTB6_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику  од. на суму  грн.
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