Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1202) > Сторінка 2 з 21
Фото | Назва | Виробник | Інформація |
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 9480 шт: термін постачання 14-21 дні (днів) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
на замовлення 3549 шт: термін постачання 21-30 дні (днів) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 3549 шт: термін постачання 14-21 дні (днів) |
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 9480 шт: термін постачання 21-30 дні (днів) |
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2SB1197A_R1_00001 | PanJit Semiconductor |
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на замовлення 2644 шт: термін постачання 14-21 дні (днів) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A кількість в упаковці: 1 шт |
на замовлення 720 шт: термін постачання 14-21 дні (днів) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A |
на замовлення 720 шт: термін постачання 21-30 дні (днів) |
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3.0SMCJ18A-AU_R1_000A1 | PanJit Semiconductor | 3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ABS2MS_R2_00101 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AZ23C5V6_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V кількість в упаковці: 1 шт |
на замовлення 7377 шт: термін постачання 14-21 дні (днів) |
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V |
на замовлення 7377 шт: термін постачання 21-30 дні (днів) |
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B4S_R2_00001 | PanJit Semiconductor |
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на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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B6S_R2_00001 | PanJit Semiconductor |
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на замовлення 524 шт: термін постачання 14-21 дні (днів) |
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B8S_R2_00001 | PanJit Semiconductor | B8S-R2 SMD/THT sing. phase diode bridge rectif. |
на замовлення 2900 шт: термін постачання 14-21 дні (днів) |
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BAS100AS-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 2243 шт: термін постачання 14-21 дні (днів) |
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BAS100ATB6_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS100CS-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 4594 шт: термін постачання 14-21 дні (днів) |
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BAS100CS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel Case: SOD323 Mounting: SMD Kind of package: reel Leakage current: 40µA Type of diode: Schottky switching Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS100CS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel Case: SOD323 Mounting: SMD Kind of package: reel Leakage current: 40µA Type of diode: Schottky switching Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 1µA Application: automotive industry |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 1µA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 30000 шт: термін постачання 14-21 дні (днів) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 2.5µA кількість в упаковці: 1 шт |
на замовлення 2854 шт: термін постачання 14-21 дні (днів) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 2.5µA |
на замовлення 2854 шт: термін постачання 21-30 дні (днів) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Max. load current: 0.5A кількість в упаковці: 1 шт |
на замовлення 3460 шт: термін постачання 14-21 дні (днів) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Max. load current: 0.5A |
на замовлення 3460 шт: термін постачання 21-30 дні (днів) |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series x2 Max. forward impulse current: 0.6A Leakage current: 22µA Application: automotive industry Type of diode: Schottky switching Max. off-state voltage: 40V Max. forward voltage: 1V Load current: 0.2A |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series x2 Max. forward impulse current: 0.6A Leakage current: 22µA Application: automotive industry Type of diode: Schottky switching Max. off-state voltage: 40V Max. forward voltage: 1V Load current: 0.2A кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series x2 Max. forward impulse current: 0.6A Leakage current: 1µA Power dissipation: 0.225W Type of diode: Schottky switching Max. off-state voltage: 40V Max. forward voltage: 1V Load current: 0.2A кількість в упаковці: 1 шт |
на замовлення 12000 шт: термін постачання 14-21 дні (днів) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series x2 Max. forward impulse current: 0.6A Leakage current: 1µA Power dissipation: 0.225W Type of diode: Schottky switching Max. off-state voltage: 40V Max. forward voltage: 1V Load current: 0.2A |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 2498 шт: термін постачання 14-21 дні (днів) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 1µA Power dissipation: 0.225W Features of semiconductor devices: fast switching |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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BAS40TS_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
на замовлення 29998 шт: термін постачання 21-30 дні (днів) |
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 29998 шт: термін постачання 14-21 дні (днів) |
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BAS70S-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 3803 шт: термін постачання 14-21 дні (днів) |
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BAS70SDW_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: triple independent Reverse recovery time: 5ns Max. forward impulse current: 0.6A Leakage current: 0.1µA Power dissipation: 0.225W Type of diode: Schottky switching Max. off-state voltage: 70V Max. forward voltage: 1V Load current: 0.2A кількість в упаковці: 1 шт |
на замовлення 3965 шт: термін постачання 14-21 дні (днів) |
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: triple independent Reverse recovery time: 5ns Max. forward impulse current: 0.6A Leakage current: 0.1µA Power dissipation: 0.225W Type of diode: Schottky switching Max. off-state voltage: 70V Max. forward voltage: 1V Load current: 0.2A |
на замовлення 3965 шт: термін постачання 21-30 дні (днів) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 0.225W Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 2342 шт: термін постачання 14-21 дні (днів) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 0.225W Features of semiconductor devices: fast switching |
на замовлення 2342 шт: термін постачання 21-30 дні (днів) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA кількість в упаковці: 1 шт |
на замовлення 539 шт: термін постачання 14-21 дні (днів) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 0.5µA кількість в упаковці: 1 шт |
на замовлення 5140 шт: термін постачання 14-21 дні (днів) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 0.5µA |
на замовлення 5140 шт: термін постачання 21-30 дні (днів) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA кількість в упаковці: 1 шт |
на замовлення 905 шт: термін постачання 14-21 дні (днів) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 905 шт: термін постачання 21-30 дні (днів) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 2724 шт: термін постачання 14-21 дні (днів) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching |
на замовлення 2724 шт: термін постачання 21-30 дні (днів) |
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BAT54C-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 90µA Max. forward impulse current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54C-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 90µA Max. forward impulse current: 0.6A Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54C_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 1855 шт: термін постачання 14-21 дні (днів) |
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2N7002KDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
2N7002KDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
товару немає в наявності
В кошику
од. на суму грн.
2N7002K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 9480 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
30+ | 9.66 грн |
43+ | 6.52 грн |
100+ | 3.63 грн |
682+ | 1.55 грн |
1874+ | 1.46 грн |
2N7002KW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.30 грн |
44+ | 8.52 грн |
100+ | 5.31 грн |
493+ | 1.79 грн |
1355+ | 1.69 грн |
2N7002KW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 3549 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 18.35 грн |
27+ | 10.62 грн |
100+ | 6.37 грн |
493+ | 2.14 грн |
1355+ | 2.03 грн |
24000+ | 1.95 грн |
2N7002K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
72+ | 5.23 грн |
124+ | 3.03 грн |
682+ | 1.29 грн |
1874+ | 1.22 грн |
2SB1197A_R1_00001 |
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Виробник: PanJit Semiconductor
2SB1197A-R1 PNP SMD transistors
2SB1197A-R1 PNP SMD transistors
на замовлення 2644 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 18.16 грн |
169+ | 6.19 грн |
465+ | 5.92 грн |
2SD1781A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
кількість в упаковці: 1 шт
на замовлення 720 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 27.05 грн |
15+ | 19.93 грн |
100+ | 12.38 грн |
171+ | 6.19 грн |
470+ | 5.83 грн |
24000+ | 5.56 грн |
2SD1781A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
на замовлення 720 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
24+ | 16.00 грн |
100+ | 10.32 грн |
171+ | 5.16 грн |
470+ | 4.86 грн |
3.0SMCJ18A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
товару немає в наявності
В кошику
од. на суму грн.
3.0SMCJ33CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
3.0SMCJ33CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
В кошику
од. на суму грн.
ABS2MS_R2_00101 |
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Виробник: PanJit Semiconductor
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
AZ23C5V6_R1_00001 |
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Виробник: PanJit Semiconductor
AZ23C5V6-R1 SMD Zener diodes
AZ23C5V6-R1 SMD Zener diodes
товару немає в наявності
В кошику
од. на суму грн.
B10S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
кількість в упаковці: 1 шт
на замовлення 7377 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 34.78 грн |
13+ | 22.36 грн |
100+ | 14.71 грн |
132+ | 7.98 грн |
364+ | 7.53 грн |
9000+ | 7.45 грн |
24000+ | 7.27 грн |
B10S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
на замовлення 7377 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 28.98 грн |
21+ | 17.94 грн |
100+ | 12.26 грн |
132+ | 6.65 грн |
364+ | 6.28 грн |
B4S_R2_00001 |
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Виробник: PanJit Semiconductor
B4S-R2 SMD/THT sing. phase diode bridge rectif.
B4S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 39.51 грн |
164+ | 6.46 грн |
450+ | 6.10 грн |
45000+ | 6.05 грн |
B6S_R2_00001 |
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Виробник: PanJit Semiconductor
B6S-R2 SMD/THT sing. phase diode bridge rectif.
B6S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 524 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 26.66 грн |
169+ | 6.28 грн |
463+ | 5.92 грн |
15000+ | 5.87 грн |
B8S_R2_00001 |
Виробник: PanJit Semiconductor
B8S-R2 SMD/THT sing. phase diode bridge rectif.
B8S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 2900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.20 грн |
169+ | 6.28 грн |
463+ | 5.92 грн |
BAS100AS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
BAS100AS-AU-R1 SMD Schottky diodes
BAS100AS-AU-R1 SMD Schottky diodes
на замовлення 2243 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
20+ | 15.17 грн |
255+ | 4.12 грн |
702+ | 3.89 грн |
BAS100ATB6_R1_00001 |
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Виробник: PanJit Semiconductor
BAS100ATB6-R1 SMD Schottky diodes
BAS100ATB6-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS100CS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
BAS100CS-AU-R1 SMD Schottky diodes
BAS100CS-AU-R1 SMD Schottky diodes
на замовлення 4594 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.94 грн |
284+ | 3.70 грн |
779+ | 3.51 грн |
BAS100CS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Case: SOD323
Mounting: SMD
Kind of package: reel
Leakage current: 40µA
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Case: SOD323
Mounting: SMD
Kind of package: reel
Leakage current: 40µA
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BAS100CS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Case: SOD323
Mounting: SMD
Kind of package: reel
Leakage current: 40µA
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.5A; reel
Case: SOD323
Mounting: SMD
Kind of package: reel
Leakage current: 40µA
Type of diode: Schottky switching
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
товару немає в наявності
В кошику
од. на суму грн.
BAS16TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
67+ | 5.61 грн |
122+ | 3.08 грн |
250+ | 2.43 грн |
500+ | 2.06 грн |
578+ | 1.52 грн |
1588+ | 1.44 грн |
5000+ | 1.39 грн |
BAS16TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 1µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 30000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
30+ | 9.66 грн |
40+ | 6.99 грн |
100+ | 3.70 грн |
250+ | 2.92 грн |
500+ | 2.47 грн |
578+ | 1.83 грн |
1588+ | 1.73 грн |
BAS16TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 10.63 грн |
35+ | 8.01 грн |
100+ | 3.13 грн |
250+ | 2.35 грн |
500+ | 2.12 грн |
660+ | 1.59 грн |
1816+ | 1.51 грн |
BAS16TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
59+ | 6.43 грн |
144+ | 2.61 грн |
250+ | 1.96 грн |
500+ | 1.76 грн |
660+ | 1.32 грн |
1816+ | 1.26 грн |
BAS16TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
кількість в упаковці: 1 шт
на замовлення 2854 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 10.63 грн |
32+ | 8.85 грн |
100+ | 7.07 грн |
250+ | 5.66 грн |
337+ | 3.14 грн |
926+ | 2.97 грн |
BAS16TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
на замовлення 2854 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
53+ | 7.10 грн |
100+ | 5.89 грн |
250+ | 4.72 грн |
337+ | 2.62 грн |
926+ | 2.47 грн |
BAS21_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
50+ | 5.84 грн |
75+ | 3.73 грн |
125+ | 2.16 грн |
250+ | 1.96 грн |
500+ | 1.80 грн |
663+ | 1.60 грн |
1821+ | 1.51 грн |
BAS21_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
83+ | 4.87 грн |
125+ | 2.99 грн |
208+ | 1.80 грн |
250+ | 1.63 грн |
500+ | 1.50 грн |
663+ | 1.33 грн |
1821+ | 1.26 грн |
BAS316_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
кількість в упаковці: 1 шт
на замовлення 3460 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
64+ | 4.59 грн |
97+ | 2.89 грн |
158+ | 1.70 грн |
250+ | 1.53 грн |
500+ | 1.42 грн |
844+ | 1.26 грн |
2318+ | 1.18 грн |
BAS316_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
106+ | 3.82 грн |
162+ | 2.32 грн |
264+ | 1.42 грн |
293+ | 1.28 грн |
500+ | 1.18 грн |
844+ | 1.05 грн |
2318+ | 0.99 грн |
BAS40SDW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
44+ | 8.67 грн |
53+ | 7.09 грн |
100+ | 5.21 грн |
255+ | 3.46 грн |
702+ | 3.27 грн |
BAS40SDW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 22µA
Application: automotive industry
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 15.46 грн |
26+ | 10.81 грн |
32+ | 8.50 грн |
100+ | 6.25 грн |
255+ | 4.15 грн |
702+ | 3.93 грн |
3000+ | 3.78 грн |
BAS40SDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
на замовлення 12000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
18+ | 16.42 грн |
25+ | 11.46 грн |
31+ | 8.75 грн |
100+ | 5.96 грн |
281+ | 3.79 грн |
771+ | 3.57 грн |
BAS40SDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Leakage current: 1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
41+ | 9.19 грн |
52+ | 7.30 грн |
100+ | 4.96 грн |
281+ | 3.15 грн |
771+ | 2.98 грн |
BAS40S_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 2498 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 10.63 грн |
44+ | 6.43 грн |
100+ | 3.88 грн |
250+ | 3.26 грн |
500+ | 2.86 грн |
519+ | 2.04 грн |
1428+ | 1.93 грн |
BAS40S_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 1µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
73+ | 5.16 грн |
116+ | 3.24 грн |
250+ | 2.71 грн |
500+ | 2.38 грн |
519+ | 1.70 грн |
1428+ | 1.61 грн |
BAS40TS_R1_00001 |
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Виробник: PanJit Semiconductor
BAS40TS-R1 SMD Schottky diodes
BAS40TS-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS70A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 29998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 6.64 грн |
76+ | 4.93 грн |
91+ | 4.13 грн |
128+ | 2.93 грн |
250+ | 2.47 грн |
493+ | 1.77 грн |
1353+ | 1.67 грн |
BAS70A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 29998 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
37+ | 7.97 грн |
46+ | 6.15 грн |
55+ | 4.95 грн |
100+ | 3.52 грн |
250+ | 2.96 грн |
493+ | 2.13 грн |
1353+ | 2.01 грн |
BAS70S-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
BAS70S-AU-R1 SMD Schottky diodes
BAS70S-AU-R1 SMD Schottky diodes
на замовлення 3803 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
51+ | 5.72 грн |
466+ | 2.25 грн |
1283+ | 2.13 грн |
BAS70SDW_R1_00001 |
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Виробник: PanJit Semiconductor
BAS70SDW-R1 SMD Schottky diodes
BAS70SDW-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS70TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
кількість в упаковці: 1 шт
на замовлення 3965 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
24+ | 12.56 грн |
35+ | 8.20 грн |
100+ | 5.53 грн |
250+ | 4.75 грн |
263+ | 4.04 грн |
722+ | 3.81 грн |
1000+ | 3.68 грн |
BAS70TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Max. forward voltage: 1V
Load current: 0.2A
на замовлення 3965 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
57+ | 6.58 грн |
100+ | 4.61 грн |
250+ | 3.95 грн |
263+ | 3.36 грн |
722+ | 3.18 грн |
1000+ | 3.06 грн |
BAS70WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 2342 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
30+ | 9.66 грн |
50+ | 5.59 грн |
100+ | 3.38 грн |
250+ | 2.89 грн |
457+ | 2.30 грн |
1257+ | 2.17 грн |
5000+ | 2.09 грн |
BAS70WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2342 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
84+ | 4.48 грн |
133+ | 2.82 грн |
250+ | 2.41 грн |
457+ | 1.91 грн |
1257+ | 1.81 грн |
BAT42W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
на замовлення 539 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
61+ | 4.78 грн |
75+ | 3.73 грн |
100+ | 3.18 грн |
250+ | 3.01 грн |
396+ | 2.67 грн |
1000+ | 2.58 грн |
1088+ | 2.53 грн |
BAT42WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
кількість в упаковці: 1 шт
на замовлення 5140 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 10.63 грн |
42+ | 6.71 грн |
100+ | 4.20 грн |
250+ | 3.59 грн |
435+ | 2.43 грн |
1196+ | 2.30 грн |
10000+ | 2.21 грн |
BAT42WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 5140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
70+ | 5.38 грн |
107+ | 3.50 грн |
250+ | 2.99 грн |
435+ | 2.03 грн |
1196+ | 1.91 грн |
BAT42W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 539 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
102+ | 3.98 грн |
125+ | 2.99 грн |
141+ | 2.65 грн |
250+ | 2.51 грн |
396+ | 2.23 грн |
BAT43W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
на замовлення 905 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 8.69 грн |
45+ | 6.24 грн |
100+ | 4.31 грн |
250+ | 3.61 грн |
396+ | 2.65 грн |
1000+ | 2.58 грн |
1088+ | 2.50 грн |
BAT43W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 905 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.24 грн |
75+ | 5.01 грн |
105+ | 3.59 грн |
250+ | 3.01 грн |
396+ | 2.21 грн |
BAT54A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 2724 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 8.71 грн |
57+ | 4.94 грн |
100+ | 3.61 грн |
250+ | 3.16 грн |
500+ | 2.81 грн |
674+ | 1.57 грн |
1852+ | 1.48 грн |
BAT54A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.26 грн |
95+ | 3.96 грн |
125+ | 3.00 грн |
250+ | 2.63 грн |
500+ | 2.34 грн |
674+ | 1.31 грн |
1852+ | 1.23 грн |
BAT54C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BAT54C-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BAT54C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 1855 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
30+ | 9.66 грн |
48+ | 5.87 грн |
100+ | 3.61 грн |
250+ | 3.03 грн |
500+ | 2.65 грн |
674+ | 1.57 грн |
1852+ | 1.49 грн |