Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1216) > Сторінка 2 з 21
Фото | Назва | Виробник | Інформація |
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2N7002KDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 3088 шт: термін постачання 14-21 дні (днів) |
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002KDW_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2A кількість в упаковці: 1 шт |
на замовлення 9055 шт: термін постачання 14-21 дні (днів) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
на замовлення 3549 шт: термін постачання 21-30 дні (днів) |
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 3549 шт: термін постачання 14-21 дні (днів) |
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2N7002K_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2A |
на замовлення 9055 шт: термін постачання 21-30 дні (днів) |
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2SB1197A_R1_00001 | PanJit Semiconductor |
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на замовлення 2644 шт: термін постачання 14-21 дні (днів) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A кількість в упаковці: 1 шт |
на замовлення 1876 шт: термін постачання 14-21 дні (днів) |
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2SD1781A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.25W Case: SOT23 Current gain: 300...900 Mounting: SMD Frequency: 250MHz Pulsed collector current: 5A |
на замовлення 1876 шт: термін постачання 21-30 дні (днів) |
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3.0SMCJ18A-AU_R1_000A1 | PanJit Semiconductor | 3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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3.0SMCJ33CA_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 56.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Manufacturer series: 3.0SMCJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ABS2MS_R2_00101 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AZ23C5V6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 0.1µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AZ23C5V6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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B10S_R2_00001 | PanJit Semiconductor |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.8A Max. forward impulse current: 35A Case: MDI Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward voltage: 1V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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B4S_R2_00001 | PanJit Semiconductor |
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на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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B6S_R2_00001 | PanJit Semiconductor |
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на замовлення 524 шт: термін постачання 14-21 дні (днів) |
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B8S_R2_00001 | PanJit Semiconductor | B8S-R2 SMD/THT sing. phase diode bridge rectif. |
на замовлення 2900 шт: термін постачання 14-21 дні (днів) |
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BAS100AS-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 2243 шт: термін постачання 14-21 дні (днів) |
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BAS100ATB6_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS100CS-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 4594 шт: термін постачання 14-21 дні (днів) |
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BAS100CS_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Application: automotive industry Leakage current: 1µA Reverse recovery time: 6ns |
на замовлення 28640 шт: термін постачання 21-30 дні (днів) |
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BAS16TS-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Application: automotive industry Leakage current: 1µA Reverse recovery time: 6ns кількість в упаковці: 1 шт |
на замовлення 28640 шт: термін постачання 14-21 дні (днів) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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BAS16TS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOD523 Max. forward voltage: 0.855V Leakage current: 1µA Reverse recovery time: 6ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: triple independent Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOT363 Max. forward voltage: 1.25V Leakage current: 2.5µA Reverse recovery time: 4ns кількість в упаковці: 1 шт |
на замовлення 2844 шт: термін постачання 14-21 дні (днів) |
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BAS16TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: triple independent Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 4A Case: SOT363 Max. forward voltage: 1.25V Leakage current: 2.5µA Reverse recovery time: 4ns |
на замовлення 2844 шт: термін постачання 21-30 дні (днів) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 2920 шт: термін постачання 14-21 дні (днів) |
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BAS21_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2.5A Kind of package: reel; tape Leakage current: 1µA |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Max. load current: 0.5A кількість в упаковці: 1 шт |
на замовлення 3345 шт: термін постачання 14-21 дні (днів) |
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BAS316_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Kind of package: reel; tape Max. load current: 0.5A |
на замовлення 3345 шт: термін постачання 21-30 дні (днів) |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Leakage current: 22µA Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 1V Max. off-state voltage: 40V Application: automotive industry Semiconductor structure: double series x2 Type of diode: Schottky switching |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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BAS40SDW-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Leakage current: 22µA Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 1V Max. off-state voltage: 40V Application: automotive industry Semiconductor structure: double series x2 Type of diode: Schottky switching кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Leakage current: 1µA Load current: 0.2A Power dissipation: 0.225W Max. forward impulse current: 0.6A Max. forward voltage: 1V Max. off-state voltage: 40V Kind of package: reel; tape Semiconductor structure: double series x2 Case: SOT363 Mounting: SMD Type of diode: Schottky switching кількість в упаковці: 1 шт |
на замовлення 12000 шт: термін постачання 14-21 дні (днів) |
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BAS40SDW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW Leakage current: 1µA Load current: 0.2A Power dissipation: 0.225W Max. forward impulse current: 0.6A Max. forward voltage: 1V Max. off-state voltage: 40V Kind of package: reel; tape Semiconductor structure: double series x2 Case: SOT363 Mounting: SMD Type of diode: Schottky switching |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W кількість в упаковці: 1 шт |
на замовлення 2498 шт: термін постачання 14-21 дні (днів) |
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BAS40S_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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BAS40TS_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A |
на замовлення 29998 шт: термін постачання 21-30 дні (днів) |
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BAS70A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.9V Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A кількість в упаковці: 1 шт |
на замовлення 29998 шт: термін постачання 14-21 дні (днів) |
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BAS70S-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 0.9V Leakage current: 45µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
на замовлення 3803 шт: термін постачання 21-30 дні (днів) |
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BAS70S-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward voltage: 0.9V Leakage current: 45µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 3803 шт: термін постачання 14-21 дні (днів) |
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BAS70SDW_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: triple independent Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.6A кількість в упаковці: 1 шт |
на замовлення 3454 шт: термін постачання 14-21 дні (днів) |
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BAS70TW_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: triple independent Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.6A |
на замовлення 3454 шт: термін постачання 21-30 дні (днів) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching Max. forward impulse current: 4A кількість в упаковці: 1 шт |
на замовлення 4361 шт: термін постачання 14-21 дні (днів) |
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BAS70WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching Max. forward impulse current: 4A |
на замовлення 4361 шт: термін постачання 21-30 дні (днів) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA кількість в упаковці: 1 шт |
на замовлення 528 шт: термін постачання 14-21 дні (днів) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 3889 шт: термін постачання 14-21 дні (днів) |
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BAT42WS_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA Features of semiconductor devices: fast switching |
на замовлення 3889 шт: термін постачання 21-30 дні (днів) |
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BAT42W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 528 шт: термін постачання 21-30 дні (днів) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA кількість в упаковці: 1 шт |
на замовлення 695 шт: термін постачання 14-21 дні (днів) |
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BAT43W_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
на замовлення 2725 шт: термін постачання 14-21 дні (днів) |
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BAT54A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
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BAT54C-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. load current: 0.3A Leakage current: 90µA Max. forward impulse current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
2N7002KDW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 3088 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.43 грн |
23+ | 13.09 грн |
100+ | 7.83 грн |
250+ | 6.40 грн |
308+ | 3.62 грн |
846+ | 3.42 грн |
6000+ | 3.29 грн |
2N7002KDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
2N7002KDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.12W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
товару немає в наявності
В кошику
од. на суму грн.
2N7002K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
кількість в упаковці: 1 шт
на замовлення 9055 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.18 грн |
45+ | 6.59 грн |
100+ | 3.76 грн |
500+ | 2.61 грн |
682+ | 1.64 грн |
1874+ | 1.54 грн |
9000+ | 1.50 грн |
2N7002KW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
на замовлення 3549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.46 грн |
36+ | 11.21 грн |
100+ | 6.12 грн |
493+ | 1.89 грн |
1355+ | 1.78 грн |
2N7002KW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 3549 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
18+ | 17.35 грн |
22+ | 13.97 грн |
100+ | 7.34 грн |
493+ | 2.26 грн |
1355+ | 2.14 грн |
24000+ | 2.06 грн |
2N7002K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
на замовлення 9055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.65 грн |
75+ | 5.29 грн |
126+ | 3.13 грн |
500+ | 2.17 грн |
682+ | 1.37 грн |
1874+ | 1.29 грн |
9000+ | 1.25 грн |
2SB1197A_R1_00001 |
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Виробник: PanJit Semiconductor
2SB1197A-R1 PNP SMD transistors
2SB1197A-R1 PNP SMD transistors
на замовлення 2644 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 19.18 грн |
169+ | 6.54 грн |
465+ | 6.25 грн |
2SD1781A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
кількість в упаковці: 1 шт
на замовлення 1876 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.83 грн |
12+ | 24.60 грн |
100+ | 15.06 грн |
151+ | 7.39 грн |
415+ | 7.01 грн |
24000+ | 6.82 грн |
2SD1781A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Frequency: 250MHz
Pulsed collector current: 5A
на замовлення 1876 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.86 грн |
20+ | 19.74 грн |
100+ | 12.55 грн |
151+ | 6.16 грн |
415+ | 5.84 грн |
3.0SMCJ18A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
3.0SMCJ18A-AU-R1 Unidirectional TVS SMD diodes
товару немає в наявності
В кошику
од. на суму грн.
3.0SMCJ33CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
3.0SMCJ33CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.7÷42.2V; 56.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 56.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Manufacturer series: 3.0SMCJ
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
ABS2MS_R2_00101 |
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Виробник: PanJit Semiconductor
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
ABS2MS-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
В кошику
од. на суму грн.
AZ23C5V6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 0.1µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
AZ23C5V6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 5.6V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 0.1µA
товару немає в наявності
В кошику
од. на суму грн.
B10S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.65 грн |
14+ | 21.25 грн |
100+ | 13.64 грн |
133+ | 8.43 грн |
365+ | 7.96 грн |
9000+ | 7.67 грн |
B10S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 35A; MDI
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MDI
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.21 грн |
24+ | 17.05 грн |
100+ | 11.37 грн |
133+ | 7.03 грн |
365+ | 6.63 грн |
B4S_R2_00001 |
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Виробник: PanJit Semiconductor
B4S-R2 SMD/THT sing. phase diode bridge rectif.
B4S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.73 грн |
164+ | 6.82 грн |
450+ | 6.44 грн |
45000+ | 6.40 грн |
B6S_R2_00001 |
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Виробник: PanJit Semiconductor
B6S-R2 SMD/THT sing. phase diode bridge rectif.
B6S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 524 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 28.16 грн |
169+ | 6.63 грн |
463+ | 6.25 грн |
15000+ | 6.20 грн |
B8S_R2_00001 |
Виробник: PanJit Semiconductor
B8S-R2 SMD/THT sing. phase diode bridge rectif.
B8S-R2 SMD/THT sing. phase diode bridge rectif.
на замовлення 2900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.96 грн |
169+ | 6.63 грн |
463+ | 6.25 грн |
BAS100AS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
BAS100AS-AU-R1 SMD Schottky diodes
BAS100AS-AU-R1 SMD Schottky diodes
на замовлення 2243 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.02 грн |
255+ | 4.35 грн |
702+ | 4.11 грн |
BAS100ATB6_R1_00001 |
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Виробник: PanJit Semiconductor
BAS100ATB6-R1 SMD Schottky diodes
BAS100ATB6-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS100CS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
BAS100CS-AU-R1 SMD Schottky diodes
BAS100CS-AU-R1 SMD Schottky diodes
на замовлення 4594 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.35 грн |
284+ | 3.91 грн |
779+ | 3.70 грн |
BAS100CS_R1_00001 |
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Виробник: PanJit Semiconductor
BAS100CS-R1 SMD Schottky diodes
BAS100CS-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS16TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Application: automotive industry
Leakage current: 1µA
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Application: automotive industry
Leakage current: 1µA
Reverse recovery time: 6ns
на замовлення 28640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.50 грн |
67+ | 5.92 грн |
122+ | 3.25 грн |
250+ | 2.57 грн |
500+ | 2.17 грн |
578+ | 1.60 грн |
1588+ | 1.52 грн |
5000+ | 1.46 грн |
BAS16TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Application: automotive industry
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Application: automotive industry
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
на замовлення 28640 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
30+ | 10.20 грн |
40+ | 7.38 грн |
100+ | 3.90 грн |
250+ | 3.08 грн |
500+ | 2.61 грн |
578+ | 1.92 грн |
1588+ | 1.82 грн |
BAS16TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
35+ | 8.46 грн |
100+ | 3.31 грн |
250+ | 2.48 грн |
500+ | 2.24 грн |
660+ | 1.69 грн |
1816+ | 1.59 грн |
BAS16TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOD523
Max. forward voltage: 0.855V
Leakage current: 1µA
Reverse recovery time: 6ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
59+ | 6.79 грн |
144+ | 2.76 грн |
250+ | 2.07 грн |
BAS16TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOT363
Max. forward voltage: 1.25V
Leakage current: 2.5µA
Reverse recovery time: 4ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOT363
Max. forward voltage: 1.25V
Leakage current: 2.5µA
Reverse recovery time: 4ns
кількість в упаковці: 1 шт
на замовлення 2844 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
32+ | 9.35 грн |
100+ | 7.47 грн |
250+ | 5.98 грн |
337+ | 3.31 грн |
926+ | 3.13 грн |
BAS16TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOT363
Max. forward voltage: 1.25V
Leakage current: 2.5µA
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: SOT363
Max. forward voltage: 1.25V
Leakage current: 2.5µA
Reverse recovery time: 4ns
на замовлення 2844 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
53+ | 7.50 грн |
100+ | 6.22 грн |
250+ | 4.98 грн |
337+ | 2.76 грн |
926+ | 2.61 грн |
BAS21_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 2920 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
50+ | 6.17 грн |
75+ | 3.94 грн |
125+ | 2.28 грн |
250+ | 2.07 грн |
500+ | 1.90 грн |
663+ | 1.68 грн |
1821+ | 1.59 грн |
BAS21_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
83+ | 5.14 грн |
125+ | 3.16 грн |
208+ | 1.90 грн |
250+ | 1.72 грн |
500+ | 1.59 грн |
663+ | 1.40 грн |
1821+ | 1.33 грн |
BAS316_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
кількість в упаковці: 1 шт
на замовлення 3345 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
64+ | 4.85 грн |
97+ | 3.05 грн |
158+ | 1.80 грн |
250+ | 1.62 грн |
500+ | 1.50 грн |
844+ | 1.32 грн |
2318+ | 1.25 грн |
BAS316_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Kind of package: reel; tape
Max. load current: 0.5A
на замовлення 3345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
106+ | 4.04 грн |
162+ | 2.45 грн |
264+ | 1.50 грн |
293+ | 1.35 грн |
500+ | 1.25 грн |
844+ | 1.10 грн |
2318+ | 1.04 грн |
BAS40SDW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Leakage current: 22µA
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Application: automotive industry
Semiconductor structure: double series x2
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Leakage current: 22µA
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Application: automotive industry
Semiconductor structure: double series x2
Type of diode: Schottky switching
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.75 грн |
46+ | 8.76 грн |
58+ | 6.88 грн |
100+ | 4.67 грн |
255+ | 3.63 грн |
500+ | 3.29 грн |
BAS40SDW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Leakage current: 22µA
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Application: automotive industry
Semiconductor structure: double series x2
Type of diode: Schottky switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Leakage current: 22µA
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Application: automotive industry
Semiconductor structure: double series x2
Type of diode: Schottky switching
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
20+ | 15.31 грн |
28+ | 10.92 грн |
35+ | 8.26 грн |
100+ | 5.60 грн |
255+ | 4.36 грн |
500+ | 3.95 грн |
BAS40SDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
кількість в упаковці: 1 шт
на замовлення 12000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.26 грн |
31+ | 9.54 грн |
38+ | 7.58 грн |
100+ | 5.57 грн |
281+ | 3.98 грн |
500+ | 3.79 грн |
771+ | 3.76 грн |
BAS40SDW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape; 225mW
Leakage current: 1µA
Load current: 0.2A
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Kind of package: reel; tape
Semiconductor structure: double series x2
Case: SOT363
Mounting: SMD
Type of diode: Schottky switching
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.05 грн |
52+ | 7.66 грн |
63+ | 6.32 грн |
100+ | 4.64 грн |
281+ | 3.32 грн |
500+ | 3.16 грн |
771+ | 3.13 грн |
1000+ | 3.01 грн |
BAS40S_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
кількість в упаковці: 1 шт
на замовлення 2498 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
43+ | 6.99 грн |
100+ | 3.97 грн |
500+ | 2.85 грн |
519+ | 2.15 грн |
1428+ | 2.03 грн |
6000+ | 1.96 грн |
BAS40S_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
71+ | 5.61 грн |
120+ | 3.31 грн |
500+ | 2.38 грн |
519+ | 1.79 грн |
1428+ | 1.69 грн |
BAS40TS_R1_00001 |
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Виробник: PanJit Semiconductor
BAS40TS-R1 SMD Schottky diodes
BAS40TS-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS70A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
на замовлення 29998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 7.01 грн |
76+ | 5.21 грн |
91+ | 4.36 грн |
128+ | 3.10 грн |
250+ | 2.61 грн |
493+ | 1.89 грн |
1353+ | 1.78 грн |
BAS70A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.9V
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
на замовлення 29998 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.42 грн |
46+ | 6.49 грн |
55+ | 5.23 грн |
100+ | 3.71 грн |
250+ | 3.13 грн |
493+ | 2.26 грн |
1353+ | 2.14 грн |
BAS70S-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
на замовлення 3803 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.99 грн |
84+ | 4.74 грн |
120+ | 3.30 грн |
466+ | 1.99 грн |
1283+ | 1.89 грн |
3000+ | 1.85 грн |
BAS70S-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Leakage current: 45µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 3803 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
32+ | 9.59 грн |
50+ | 5.90 грн |
100+ | 3.96 грн |
466+ | 2.39 грн |
1283+ | 2.26 грн |
3000+ | 2.22 грн |
6000+ | 2.17 грн |
BAS70SDW_R1_00001 |
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Виробник: PanJit Semiconductor
BAS70SDW-R1 SMD Schottky diodes
BAS70SDW-R1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
BAS70TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
на замовлення 3454 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
28+ | 11.22 грн |
36+ | 8.36 грн |
100+ | 5.85 грн |
263+ | 4.24 грн |
722+ | 4.01 грн |
3000+ | 3.86 грн |
BAS70TW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: triple independent
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.6A
на замовлення 3454 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.35 грн |
59+ | 6.71 грн |
100+ | 4.87 грн |
263+ | 3.53 грн |
722+ | 3.34 грн |
3000+ | 3.21 грн |
BAS70WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
кількість в упаковці: 1 шт
на замовлення 4361 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.24 грн |
39+ | 7.58 грн |
100+ | 4.49 грн |
446+ | 2.50 грн |
1225+ | 2.37 грн |
5000+ | 2.33 грн |
BAS70WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
на замовлення 4361 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.20 грн |
65+ | 6.08 грн |
106+ | 3.74 грн |
446+ | 2.08 грн |
1225+ | 1.97 грн |
BAT42W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
на замовлення 528 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
33+ | 9.42 грн |
49+ | 6.10 грн |
100+ | 4.18 грн |
250+ | 3.56 грн |
396+ | 2.81 грн |
1000+ | 2.65 грн |
3000+ | 2.56 грн |
BAT42WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 3889 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 14.28 грн |
35+ | 8.56 грн |
100+ | 4.94 грн |
435+ | 2.56 грн |
1196+ | 2.42 грн |
10000+ | 2.33 грн |
BAT42WS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Features of semiconductor devices: fast switching
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.90 грн |
58+ | 6.87 грн |
100+ | 4.11 грн |
435+ | 2.13 грн |
1196+ | 2.01 грн |
BAT42W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 528 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.85 грн |
81+ | 4.90 грн |
114+ | 3.48 грн |
250+ | 2.97 грн |
396+ | 2.34 грн |
BAT43W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 1 шт
на замовлення 695 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.18 грн |
43+ | 6.89 грн |
100+ | 4.57 грн |
250+ | 3.83 грн |
396+ | 2.81 грн |
1000+ | 2.76 грн |
1088+ | 2.66 грн |
BAT43W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 695 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.65 грн |
72+ | 5.53 грн |
104+ | 3.81 грн |
250+ | 3.19 грн |
396+ | 2.34 грн |
BAT54A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
на замовлення 2725 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
36+ | 8.71 грн |
58+ | 5.12 грн |
100+ | 3.54 грн |
500+ | 2.78 грн |
674+ | 1.65 грн |
1852+ | 1.56 грн |
24000+ | 1.53 грн |
BAT54A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.26 грн |
97+ | 4.11 грн |
134+ | 2.95 грн |
500+ | 2.31 грн |
674+ | 1.37 грн |
1852+ | 1.30 грн |
BAT54C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.