Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1479) > Сторінка 21 з 25
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PJMF060N65FR2_T0_00601 | PanJit Semiconductor |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48.3A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMF080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29.2A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMF105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMF120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 33W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMF125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB Polarisation: unipolar Drain current: 29A Gate-source voltage: 30V Case: ITO220AB Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMF190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.6A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMF210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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PJMF280N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH042N60FRC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 69A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH074N60FRCH_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 84nC On-state resistance: 74mΩ Pulsed drain current: 117A Power dissipation: 446W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMH080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMH125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3 Polarisation: unipolar Drain current: 30A Gate-source voltage: 30V Case: TO247AD-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMH190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO247AD-3 Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMK040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Case: TO247AD-3 Gate-source voltage: 40V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJMK074N60FRCH_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 74V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMP060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJMP105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
на замовлення 196 шт: термін постачання 14-30 дні (днів) |
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| PJMP125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB Polarisation: unipolar Drain current: 30A Gate-source voltage: 30V Case: TO220AB Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJMP190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PJP125N06SA-AU_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJP18N20_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Case: TO220AB Mounting: THT Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4435EP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 45A Drain-source voltage: 30V Gate-source voltage: 25V Application: automotive industry Case: DFN3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel Polarisation: unipolar Pulsed drain current: -138A Drain current: -41A Drain-source voltage: -30V Gate charge: 34nC On-state resistance: 12.5mΩ Power dissipation: 13.5W Gate-source voltage: ±25V Case: DFN3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4437EP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8 Polarisation: unipolar Application: automotive industry Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain current: 41A Drain-source voltage: 30V Gate-source voltage: 25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4437EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel Pulsed drain current: -123A Drain current: -38A Drain-source voltage: -30V Gate charge: 32nC On-state resistance: 15.4mΩ Power dissipation: 13.5W Gate-source voltage: ±25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4446P-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8 Application: automotive industry Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Gate-source voltage: 20V Drain-source voltage: 40V Drain current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4463AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 60V Drain current: 4.2A Gate-source voltage: 20V Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4463AP_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 60V Drain current: 4.2A Gate-source voltage: 20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4464AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8 Polarisation: unipolar Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain current: 33A Gate-source voltage: 20V Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJQ4465AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15A Case: DFN3333-8 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 20W Pulsed drain current: -60A Gate charge: 22nC On-state resistance: 65mΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJQ4465AP_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4466P_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 33A Gate-source voltage: 20V Drain-source voltage: 60V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4468AP-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8 Mounting: SMD Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4544S6VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61A Pulsed drain current: 244A Power dissipation: 42W Case: DFN3333-8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
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PJQ4548P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 13nC On-state resistance: 12.5mΩ Gate-source voltage: ±20V Power dissipation: 30W Drain current: 43A Drain-source voltage: 40V Pulsed drain current: 172A Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJQ4548S6P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain current: 60A Drain-source voltage: 40V Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4548S6VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: 20V Drain current: 56A Drain-source voltage: 40V Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
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PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 9.5nC On-state resistance: 12.7mΩ Gate-source voltage: ±20V Power dissipation: 30W Drain current: 40A Drain-source voltage: 40V Pulsed drain current: 160A Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PJQ4568AP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8 Mounting: SMD Polarisation: unipolar Drain current: 36A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4594P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8 Case: DFN3333-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 150V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ4670AP_R2_00201 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Pulsed drain current: 148A Power dissipation: 15W Case: DFN3333-8 Gate-source voltage: 20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5427_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8 Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5435E-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Application: automotive industry Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5435E_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5458A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8 Application: automotive industry Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 16A Gate-source voltage: 20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| PJQ5518C-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8 Mounting: SMD Polarisation: unipolar Drain current: 318A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060X-8 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. |
| PJMF060N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF080N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF105N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF120N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMF125N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| PJMF190N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF210N65EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 204.56 грн |
| 10+ | 106.27 грн |
| PJMF280N60E1_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.01 грн |
| 10+ | 90.37 грн |
| 50+ | 82.00 грн |
| PJMF280N65E1_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 178.43 грн |
| 10+ | 123.84 грн |
| PJMF360N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF580N60E1_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF990N65EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH042N60FRC_T0_00201 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH060N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRCH_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH074N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
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В кошику
од. на суму грн.
| PJMH080N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMH105N60FRC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMH120N60EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMH125N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| PJMH190N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMK040N60EC_T0_00201 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMK074N60FRCH_T0_00201 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMP060N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMP080N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMP105N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP120N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 282.06 грн |
| 10+ | 234.30 грн |
| 50+ | 196.64 грн |
| 100+ | 176.56 грн |
| PJMP125N60FRC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| PJMP190N65FR2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJMP210N65EC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJP125N06SA-AU_T0_006A1 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJP18N20_T0_00001 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN3333-8
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -138A
Drain current: -41A
Drain-source voltage: -30V
Gate charge: 34nC
On-state resistance: 12.5mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Case: DFN3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -138A
Drain current: -41A
Drain-source voltage: -30V
Gate charge: 34nC
On-state resistance: 12.5mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Case: DFN3333-8
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В кошику
од. на суму грн.
| PJQ4437EP-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4437EP_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
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В кошику
од. на суму грн.
| PJQ4446P-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4463AP-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4463AP_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4464AP-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4465AP-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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| PJQ4465AP_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJQ4466P_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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| PJQ4468AP-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
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| PJQ4544S6VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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| PJQ4546VP-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJQ4548P-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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| PJQ4548S6P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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| PJQ4548S6VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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| PJQ4548VP-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
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| PJQ4568AP-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
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| PJQ4594P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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| PJQ4670AP_R2_00201 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PJQ5427_R2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
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| PJQ5435E-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
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| PJQ5435E_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
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| PJQ5458A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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| PJQ5518C-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
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Мінімальне замовлення: 30000 шт
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