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PJX138L_R1_00002 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 3950 шт:
термін постачання 7-14 дні (днів)
25+12.87 грн
35+ 8.15 грн
100+ 7.08 грн
170+ 5.89 грн
470+ 5.55 грн
4000+ 5.29 грн
Мінімальне замовлення: 25
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)
40+10.72 грн
55+ 6.54 грн
100+ 5.9 грн
170+ 4.91 грн
470+ 4.62 грн
Мінімальне замовлення: 40
PMS410_R2_00601 PanJit Semiconductor PMS410.pdf PMS410-R2 SMD/THT sing. phase diode bridge rectif.
товар відсутній
PSDH60120S1B_T0_00601 PanJit Semiconductor PSDH60120S1B-T0 THT universal diodes
товар відсутній
PSMB050N10NS2_R2_00601 PanJit Semiconductor PSMB050N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMB050N10NS2_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMB050N10NS2_R2_00601 PanJit Semiconductor PSMB050N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMB050N10NS2_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
PSMB055N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PSMP050N10NS2_T0_00601 PSMP050N10NS2_T0_00601 PanJit Semiconductor PSMP050N10NS2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP050N10NS2_T0_00601 PSMP050N10NS2_T0_00601 PanJit Semiconductor PSMP050N10NS2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMP075N15NS1_T0_00601 PSMP075N15NS1_T0_00601 PanJit Semiconductor PSMP075N15NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP075N15NS1_T0_00601 PSMP075N15NS1_T0_00601 PanJit Semiconductor PSMP075N15NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PTGH4065S1_T0_00201 PanJit Semiconductor PTGH4065S1-T0 THT IGBT transistors
товар відсутній
PZ1AL3V6B_R1_00001 PanJit Semiconductor PZ1AL3V6B-R1 SMD Zener diodes
товар відсутній
PZS1112BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PZS1112BES_R1_00001 PanJit Semiconductor PZS113V9BES_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
PZS516V2BAS_R1_00001 PanJit Semiconductor PZS513V9BAS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
45+6.75 грн
55+ 4.87 грн
250+ 4.22 грн
285+ 3.51 грн
785+ 3.31 грн
9000+ 3.18 грн
Мінімальне замовлення: 45
PZS516V2BAS_R1_00001 PanJit Semiconductor PZS513V9BAS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
70+5.62 грн
95+ 3.91 грн
250+ 3.52 грн
285+ 2.92 грн
785+ 2.76 грн
Мінімальне замовлення: 70
RB500V-40_R1_00001 PanJit Semiconductor RB500V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 45V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 4875 шт:
термін постачання 21-30 дні (днів)
175+2.23 грн
250+ 1.56 грн
500+ 1.38 грн
675+ 1.23 грн
1875+ 1.17 грн
Мінімальне замовлення: 175
RB500V-40_R1_00001 PanJit Semiconductor RB500V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 45V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 25 шт
на замовлення 4875 шт:
термін постачання 7-14 дні (днів)
125+2.67 грн
150+ 1.95 грн
500+ 1.66 грн
675+ 1.48 грн
1875+ 1.4 грн
5000+ 1.39 грн
15000+ 1.34 грн
Мінімальне замовлення: 125
RB501V-40_R1_00001 PanJit Semiconductor RB501V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 100mA; SOD323; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Load current: 0.1A
Max. load current: 1A
Semiconductor structure: single diode
Leakage current: 10µA
Type of diode: Schottky rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
175+2.23 грн
250+ 1.56 грн
500+ 1.38 грн
675+ 1.21 грн
1850+ 1.14 грн
Мінімальне замовлення: 175
RB501V-40_R1_00001 PanJit Semiconductor RB501V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 100mA; SOD323; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Load current: 0.1A
Max. load current: 1A
Semiconductor structure: single diode
Leakage current: 10µA
Type of diode: Schottky rectifying
кількість в упаковці: 25 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
125+2.67 грн
150+ 1.95 грн
500+ 1.66 грн
675+ 1.45 грн
1850+ 1.37 грн
15000+ 1.34 грн
Мінімальне замовлення: 125
RB520S30_R1_00001 RB520S30_R1_00001 PanJit Semiconductor RB520S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 1A
кількість в упаковці: 5 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
85+3.26 грн
100+ 2.76 грн
455+ 2.18 грн
1245+ 2.07 грн
5000+ 1.99 грн
Мінімальне замовлення: 85
RB520S30_R1_00001 RB520S30_R1_00001 PanJit Semiconductor RB520S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 1A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
145+2.72 грн
165+ 2.22 грн
455+ 1.82 грн
1245+ 1.72 грн
5000+ 1.66 грн
Мінімальне замовлення: 145
RB520S40-AU_R1_000A1 PanJit Semiconductor RB520S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 10ns; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 1A
Application: automotive industry
на замовлення 9950 шт:
термін постачання 21-30 дні (днів)
115+3.47 грн
140+ 2.56 грн
250+ 2.27 грн
395+ 2.13 грн
1000+ 2.03 грн
1080+ 2.01 грн
5000+ 1.93 грн
Мінімальне замовлення: 115
RB520S40-AU_R1_000A1 PanJit Semiconductor RB520S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 10ns; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 1A
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 9950 шт:
термін постачання 7-14 дні (днів)
70+4.16 грн
85+ 3.19 грн
250+ 2.72 грн
395+ 2.55 грн
1000+ 2.44 грн
1080+ 2.42 грн
5000+ 2.32 грн
Мінімальне замовлення: 70
RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Kind of package: reel; tape
Leakage current: 0.1mA
кількість в упаковці: 5 шт
на замовлення 9380 шт:
термін постачання 7-14 дні (днів)
85+3.44 грн
100+ 2.77 грн
480+ 2.08 грн
1320+ 1.97 грн
15000+ 1.91 грн
Мінімальне замовлення: 85
RB521S30_R1_00001 PanJit Semiconductor RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 9380 шт:
термін постачання 21-30 дні (днів)
135+2.86 грн
160+ 2.23 грн
480+ 1.74 грн
1320+ 1.64 грн
Мінімальне замовлення: 135
RB720M-30_R1_00001 PanJit Semiconductor RB720M-30.pdf RB720M-30-R1 SMD Schottky diodes
товар відсутній
RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 0.5A
Application: automotive industry
на замовлення 4955 шт:
термін постачання 21-30 дні (днів)
105+3.69 грн
135+ 2.7 грн
250+ 2.39 грн
390+ 2.11 грн
1075+ 2 грн
Мінімальне замовлення: 105
RB751S40-AU_R1_000A1 PanJit Semiconductor RB751S40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 0.5A
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 4955 шт:
термін постачання 7-14 дні (днів)
65+4.43 грн
80+ 3.37 грн
250+ 2.87 грн
390+ 2.53 грн
1075+ 2.4 грн
10000+ 2.31 грн
Мінімальне замовлення: 65
RB751S40_R1_00001 RB751S40_R1_00001 PanJit Semiconductor RB751S40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
товар відсутній
RB751S40_R1_00001 RB751S40_R1_00001 PanJit Semiconductor RB751S40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
товар відсутній
RB751V-40-AU_R1_000A1 PanJit Semiconductor RB751V-40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Case: SOD323
Kind of package: reel; tape
Leakage current: 22µA
Max. forward impulse current: 0.6A
Application: automotive industry
товар відсутній
RB751V-40X_R1_00001 PanJit Semiconductor RB751V-40X.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Max. load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 4560 шт:
термін постачання 21-30 дні (днів)
135+2.86 грн
155+ 2.33 грн
455+ 1.83 грн
1245+ 1.73 грн
Мінімальне замовлення: 135
RB751V-40_R1_00001 PanJit Semiconductor RB751V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 3930 шт:
термін постачання 21-30 дні (днів)
140+2.81 грн
165+ 2.19 грн
480+ 1.72 грн
1320+ 1.63 грн
Мінімальне замовлення: 140
RB751V-40-AU_R1_000A1 PanJit Semiconductor RB751V-40-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Case: SOD323
Kind of package: reel; tape
Leakage current: 22µA
Max. forward impulse current: 0.6A
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
RB751V-40_R1_00001 PanJit Semiconductor RB751V-40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 5 шт
на замовлення 3930 шт:
термін постачання 7-14 дні (днів)
85+3.37 грн
100+ 2.73 грн
480+ 2.07 грн
1320+ 1.95 грн
15000+ 1.88 грн
Мінімальне замовлення: 85
RB751V-40X_R1_00001 PanJit Semiconductor RB751V-40X.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Max. load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 5 шт
на замовлення 4560 шт:
термін постачання 7-14 дні (днів)
85+3.43 грн
100+ 2.91 грн
455+ 2.19 грн
1245+ 2.07 грн
15000+ 2 грн
Мінімальне замовлення: 85
RDXK210_T0_00601 PanJit Semiconductor RDXK210.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.3V
Case: DXK
Kind of package: tube
Max. forward impulse current: 100A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
кількість в упаковці: 1 шт
товар відсутній
RDXK210_T0_00601 PanJit Semiconductor RDXK210.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.3V
Case: DXK
Kind of package: tube
Max. forward impulse current: 100A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
товар відсутній
RDXK410_T0_00601 PanJit Semiconductor RDXK410-T0 Flat single phase diode bridge rectif.
товар відсутній
RDXK610_T0_00601 PanJit Semiconductor RDXK610-T0 Flat single phase diode bridge rectif.
товар відсутній
RDXK810_T0_00601 PanJit Semiconductor RDXK810.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 150A; flat
Electrical mounting: THT
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Case: DXK
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 150A
кількість в упаковці: 1 шт
товар відсутній
RDXK810_T0_00601 PanJit Semiconductor RDXK810.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 150A; flat
Electrical mounting: THT
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Case: DXK
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 150A
товар відсутній
RPMS210_R2_00601 PanJit Semiconductor RPMS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Case: M4
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
товар відсутній
RPMS210_R2_00601 PanJit Semiconductor RPMS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Case: M4
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 100A
товар відсутній
PJX138L_R1_00002
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 3950 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+12.87 грн
35+ 8.15 грн
100+ 7.08 грн
170+ 5.89 грн
470+ 5.55 грн
4000+ 5.29 грн
Мінімальне замовлення: 25
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.72 грн
55+ 6.54 грн
100+ 5.9 грн
170+ 4.91 грн
470+ 4.62 грн
Мінімальне замовлення: 40
PMS410_R2_00601 PMS410.pdf
Виробник: PanJit Semiconductor
PMS410-R2 SMD/THT sing. phase diode bridge rectif.
товар відсутній
PSDH60120S1B_T0_00601
Виробник: PanJit Semiconductor
PSDH60120S1B-T0 THT universal diodes
товар відсутній
PSMB050N10NS2_R2_00601 PSMB050N10NS2.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMB050N10NS2_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMB050N10NS2_R2_00601 PSMB050N10NS2.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMB050N10NS2_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMB055N08NS1_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
PSMB055N08NS1_T0_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Power dissipation: 113.6W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 108A
Gate charge: 65.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
On-state resistance: 7mΩ
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
PSMP050N10NS2_T0_00601 PSMP050N10NS2.pdf
PSMP050N10NS2_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP050N10NS2_T0_00601 PSMP050N10NS2.pdf
PSMP050N10NS2_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMP075N15NS1_T0_00601 PSMP075N15NS1.pdf
PSMP075N15NS1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMP075N15NS1_T0_00601 PSMP075N15NS1.pdf
PSMP075N15NS1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PTGH4065S1_T0_00201
Виробник: PanJit Semiconductor
PTGH4065S1-T0 THT IGBT transistors
товар відсутній
PZ1AL3V6B_R1_00001
Виробник: PanJit Semiconductor
PZ1AL3V6B-R1 SMD Zener diodes
товар відсутній
PZS1112BES_R1_00001 PZS113V9BES_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PZS1112BES_R1_00001 PZS113V9BES_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
PZS516V2BAS_R1_00001 PZS513V9BAS_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
45+6.75 грн
55+ 4.87 грн
250+ 4.22 грн
285+ 3.51 грн
785+ 3.31 грн
9000+ 3.18 грн
Мінімальне замовлення: 45
PZS516V2BAS_R1_00001 PZS513V9BAS_SERIES.pdf
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
70+5.62 грн
95+ 3.91 грн
250+ 3.52 грн
285+ 2.92 грн
785+ 2.76 грн
Мінімальне замовлення: 70
RB500V-40_R1_00001 RB500V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 45V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 4875 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
175+2.23 грн
250+ 1.56 грн
500+ 1.38 грн
675+ 1.23 грн
1875+ 1.17 грн
Мінімальне замовлення: 175
RB500V-40_R1_00001 RB500V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 45V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 25 шт
на замовлення 4875 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
125+2.67 грн
150+ 1.95 грн
500+ 1.66 грн
675+ 1.48 грн
1875+ 1.4 грн
5000+ 1.39 грн
15000+ 1.34 грн
Мінімальне замовлення: 125
RB501V-40_R1_00001 RB501V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 100mA; SOD323; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Load current: 0.1A
Max. load current: 1A
Semiconductor structure: single diode
Leakage current: 10µA
Type of diode: Schottky rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
175+2.23 грн
250+ 1.56 грн
500+ 1.38 грн
675+ 1.21 грн
1850+ 1.14 грн
Мінімальне замовлення: 175
RB501V-40_R1_00001 RB501V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 100mA; SOD323; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Load current: 0.1A
Max. load current: 1A
Semiconductor structure: single diode
Leakage current: 10µA
Type of diode: Schottky rectifying
кількість в упаковці: 25 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
125+2.67 грн
150+ 1.95 грн
500+ 1.66 грн
675+ 1.45 грн
1850+ 1.37 грн
15000+ 1.34 грн
Мінімальне замовлення: 125
RB520S30_R1_00001 RB520S30.pdf
RB520S30_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 1A
кількість в упаковці: 5 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
85+3.26 грн
100+ 2.76 грн
455+ 2.18 грн
1245+ 2.07 грн
5000+ 1.99 грн
Мінімальне замовлення: 85
RB520S30_R1_00001 RB520S30.pdf
RB520S30_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 1A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
145+2.72 грн
165+ 2.22 грн
455+ 1.82 грн
1245+ 1.72 грн
5000+ 1.66 грн
Мінімальне замовлення: 145
RB520S40-AU_R1_000A1 RB520S40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 10ns; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 1A
Application: automotive industry
на замовлення 9950 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
115+3.47 грн
140+ 2.56 грн
250+ 2.27 грн
395+ 2.13 грн
1000+ 2.03 грн
1080+ 2.01 грн
5000+ 1.93 грн
Мінімальне замовлення: 115
RB520S40-AU_R1_000A1 RB520S40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 10ns; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 1A
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 9950 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
70+4.16 грн
85+ 3.19 грн
250+ 2.72 грн
395+ 2.55 грн
1000+ 2.44 грн
1080+ 2.42 грн
5000+ 2.32 грн
Мінімальне замовлення: 70
RB521S30_R1_00001 RB521S30.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Kind of package: reel; tape
Leakage current: 0.1mA
кількість в упаковці: 5 шт
на замовлення 9380 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
85+3.44 грн
100+ 2.77 грн
480+ 2.08 грн
1320+ 1.97 грн
15000+ 1.91 грн
Мінімальне замовлення: 85
RB521S30_R1_00001 RB521S30.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Max. off-state voltage: 30V
Load current: 0.2A
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 9380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
135+2.86 грн
160+ 2.23 грн
480+ 1.74 грн
1320+ 1.64 грн
Мінімальне замовлення: 135
RB720M-30_R1_00001 RB720M-30.pdf
Виробник: PanJit Semiconductor
RB720M-30-R1 SMD Schottky diodes
товар відсутній
RB751S40-AU_R1_000A1 RB751S40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 0.5A
Application: automotive industry
на замовлення 4955 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
105+3.69 грн
135+ 2.7 грн
250+ 2.39 грн
390+ 2.11 грн
1075+ 2 грн
Мінімальне замовлення: 105
RB751S40-AU_R1_000A1 RB751S40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 0.5A
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 4955 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
65+4.43 грн
80+ 3.37 грн
250+ 2.87 грн
390+ 2.53 грн
1075+ 2.4 грн
10000+ 2.31 грн
Мінімальне замовлення: 65
RB751S40_R1_00001 RB751S40.pdf
RB751S40_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
товар відсутній
RB751S40_R1_00001 RB751S40.pdf
RB751S40_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD523; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD523
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
товар відсутній
RB751V-40-AU_R1_000A1 RB751V-40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Case: SOD323
Kind of package: reel; tape
Leakage current: 22µA
Max. forward impulse current: 0.6A
Application: automotive industry
товар відсутній
RB751V-40X_R1_00001 RB751V-40X.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Max. load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 4560 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
135+2.86 грн
155+ 2.33 грн
455+ 1.83 грн
1245+ 1.73 грн
Мінімальне замовлення: 135
RB751V-40_R1_00001 RB751V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 3930 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
140+2.81 грн
165+ 2.19 грн
480+ 1.72 грн
1320+ 1.63 грн
Мінімальне замовлення: 140
RB751V-40-AU_R1_000A1 RB751V-40-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Case: SOD323
Kind of package: reel; tape
Leakage current: 22µA
Max. forward impulse current: 0.6A
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
RB751V-40_R1_00001 RB751V-40.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 5 шт
на замовлення 3930 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
85+3.37 грн
100+ 2.73 грн
480+ 2.07 грн
1320+ 1.95 грн
15000+ 1.88 грн
Мінімальне замовлення: 85
RB751V-40X_R1_00001 RB751V-40X.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Max. load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
кількість в упаковці: 5 шт
на замовлення 4560 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
85+3.43 грн
100+ 2.91 грн
455+ 2.19 грн
1245+ 2.07 грн
15000+ 2 грн
Мінімальне замовлення: 85
RDXK210_T0_00601 RDXK210.pdf
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.3V
Case: DXK
Kind of package: tube
Max. forward impulse current: 100A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
кількість в упаковці: 1 шт
товар відсутній
RDXK210_T0_00601 RDXK210.pdf
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.3V
Case: DXK
Kind of package: tube
Max. forward impulse current: 100A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
товар відсутній
RDXK410_T0_00601
Виробник: PanJit Semiconductor
RDXK410-T0 Flat single phase diode bridge rectif.
товар відсутній
RDXK610_T0_00601
Виробник: PanJit Semiconductor
RDXK610-T0 Flat single phase diode bridge rectif.
товар відсутній
RDXK810_T0_00601 RDXK810.pdf
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 150A; flat
Electrical mounting: THT
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Case: DXK
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 150A
кількість в упаковці: 1 шт
товар відсутній
RDXK810_T0_00601 RDXK810.pdf
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 150A; flat
Electrical mounting: THT
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Case: DXK
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 150A
товар відсутній
RPMS210_R2_00601 RPMS210.pdf
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Case: M4
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
товар відсутній
RPMS210_R2_00601 RPMS210.pdf
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Case: M4
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 100A
товар відсутній
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