Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1202) > Сторінка 21 з 21
| Фото | Назва | Виробник | Інформація |
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US1J_R1_00001 | PanJit Semiconductor |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape |
на замовлення 1788 шт: термін постачання 21-30 дні (днів) |
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US1M_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.1mA Max. forward voltage: 1.7V |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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| US1J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 14.49 грн |
| 41+ | 9.27 грн |
| 56+ | 6.68 грн |
| 100+ | 5.81 грн |
| 242+ | 3.61 грн |
| 664+ | 3.42 грн |
| US1M_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward voltage: 1.7V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward voltage: 1.7V
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 14.49 грн |
| 40+ | 9.34 грн |
| 57+ | 6.61 грн |
| 100+ | 5.70 грн |
| 231+ | 3.82 грн |
| 635+ | 3.61 грн |
| 1800+ | 3.47 грн |