Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1706) > Сторінка 21 з 29
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
 Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ5.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ5.6B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ5.6B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ6.8B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ6.8B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ7.5B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ7.5B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ8.2B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ8.2B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ9.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ9.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PE1605C4A6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 1A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Capacitance: 0.6pF Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 1A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Capacitance: 0.6pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4A6_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 1A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Capacitance: 0.6pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4E6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4E6-AU_S1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4E6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4 Version: ESD Application: Ethernet; USB Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT23-6 Capacitance: 0.8pF Type of diode: TVS array Number of channels: 4 Mounting: SMD Breakdown voltage: 6...9V Max. forward impulse current: 5A |
на замовлення 8067 шт: термін постачання 14-30 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4 Version: ESD Application: Ethernet; USB Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT363 Capacitance: 0.8pF Type of diode: TVS array Number of channels: 4 Mounting: SMD Breakdown voltage: 6...9V Max. forward impulse current: 5A |
на замовлення 2965 шт: термін постачання 14-30 дні (днів) |
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1 Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOD523 Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6...7.5V |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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| PE4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Mounting: SMD Case: SOT23 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 2 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 7.5V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4105C3C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3 Mounting: SMD Case: SOT363 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 3 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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PE4136C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Breakdown voltage: 40V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Application: automotive industry Max. off-state voltage: 36V Semiconductor structure: unidirectional Leakage current: 0.8µA Capacitance: 0.1nF Type of diode: TVS |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PE4136C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Breakdown voltage: 40V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Semiconductor structure: unidirectional Leakage current: 1µA Capacitance: 0.1nF Type of diode: TVS |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PE4307ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.7V; 12.9A; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 7.7V Max. forward impulse current: 12.9A Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 7V Leakage current: 1µA Number of channels: 1 Capacitance: 0.16nF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| PE4312C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 15.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Peak pulse power dissipation: 0.35kW Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 8.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2 Type of diode: TVS Breakdown voltage: 13.2V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT323 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 15.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 1 Capacitance: 90pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 13.2V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 1 Capacitance: 90pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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PE4315C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 7.8A; 0.35kW; unidirectional; SOT23; Ch: 2 Mounting: SMD Breakdown voltage: 15.5V Max. forward impulse current: 7.8A Peak pulse power dissipation: 0.35kW Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 1µA Case: SOT23 Capacitance: 65pF Type of diode: TVS Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
| PE4336ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 39.6V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 36V Leakage current: 1µA Number of channels: 1 Capacitance: 20pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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PE4512C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 17.4A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 15.5V Max. forward impulse current: 17.4A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 0.1µA Number of channels: 2 Capacitance: 0.195nF Peak pulse power dissipation: 0.35kW Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PE4512CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 12V; 17.4A; unidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 12V Max. forward impulse current: 17.4A Semiconductor structure: unidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 0.1µA Number of channels: 1 Capacitance: 0.195nF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| PE4724L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.28nF Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 24V Breakdown voltage: 26.4V Max. forward impulse current: 32A Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4724L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.28nF Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 24V Breakdown voltage: 26.4V Max. forward impulse current: 32A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Semiconductor structure: unidirectional Breakdown voltage: 30V Max. forward impulse current: 27.5A Application: automotive industry Max. off-state voltage: 28V Leakage current: 1µA Capacitance: 0.23nF Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE9180C1A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 80V Breakdown voltage: 100V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 30nA Capacitance: 0.6pF Number of channels: 2 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PEC1605M1Q-AU_R1_005A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1 Mounting: SMD Capacitance: 0.6pF Application: automotive industry Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 75nA Case: DFN1006-2 Type of diode: TVS Number of channels: 1 Breakdown voltage: 6.8V Max. forward impulse current: 2A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Capacitance: 0.6pF Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD Kind of package: reel; tape Type of diode: TVS Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PEC3205C2C_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 2 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V Semiconductor structure: bidirectional Case: SOT323 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PEC3205C2E_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 2 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V Semiconductor structure: bidirectional Case: SOT523 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PEC3205CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 1 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 8V Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PEC3205ES-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 1 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V Application: automotive industry Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PEC3205ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 1 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Kind of package: reel; tape Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Max. off-state voltage: 5V Breakdown voltage: 5.5...8V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PEC3205S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1 Type of diode: TVS Capacitance: 20pF Leakage current: 0.5µA Number of channels: 1 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 5.5V Semiconductor structure: bidirectional Case: DFN0603-2 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
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PEC33712C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2 Mounting: SMD Application: automotive industry Max. off-state voltage: 12V Semiconductor structure: bidirectional Leakage current: 1µA Case: SOT23 Type of diode: TVS Number of channels: 2 Breakdown voltage: 13.3V Max. forward impulse current: 5A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
 |
PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD Mounting: SMD Capacitance: 35pF Max. off-state voltage: 7...12V Kind of package: reel; tape Semiconductor structure: asymmetric; bidirectional Leakage current: 1µA Case: SOT23 Type of diode: TVS array Number of channels: 2 Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PEC3827CS-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 28V; 3A; bidirectional; SOD323; Ch: 1 Mounting: SMD Case: SOD323 Application: automotive industry Max. off-state voltage: 27V Semiconductor structure: bidirectional Leakage current: 50nA Capacitance: 18pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 28V Max. forward impulse current: 3A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
| PEC4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.5µA Capacitance: 80pF Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PEC4105CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.5µA Capacitance: 80pF Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
 |
PG4007-AU_R2_100A1 | PanJit Semiconductor |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Leakage current: 50µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuits Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6 Input voltage: 750mV DC...5.5V DC Output current: 0.75A Case: SOT23-6 Operating temperature: -40...85°C Type of converter: DC/DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJ4L40W6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 30V Semiconductor structure: quadruple Mounting: SMD Case: SOT23-6L Max. off-state voltage: 30V Leakage current: 2µA Number of channels: 4 Capacitance: 19pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1614 шт: термін постачання 14-30 дні (днів) |
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 |
PJA3400-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6 Polarisation: unipolar Drain current: -2A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: 12V Kind of package: reel; tape Case: SOT23-6 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 4.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 60mΩ Mounting: SMD Pulsed drain current: 19.6A |
на замовлення 1070 шт: термін постачання 14-30 дні (днів) |
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| PDZ5.1B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ5.1B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PDZ5.6B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ5.6B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PDZ6.8B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ6.8B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PDZ7.5B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ7.5B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PDZ8.2B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ8.2B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PDZ9.1B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PDZ9.1B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PE1605C4A6_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PE1605C4A6_S1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PE1605C4E6-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PE1605C4E6-AU_S1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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| PE1605C4E6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
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Мінімальне замовлення: 4000 шт
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| PE1805C4A6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23-6
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23-6
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
на замовлення 8067 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.40 грн |
| 79+ | 5.43 грн |
| 100+ | 5.06 грн |
| 250+ | 4.62 грн |
| 500+ | 4.39 грн |
| 1000+ | 4.34 грн |
| PE1805C4C6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT363
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT363
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.70 грн |
| 55+ | 7.81 грн |
| 100+ | 5.46 грн |
| 500+ | 4.47 грн |
| 1000+ | 4.16 грн |
| PE4105C1ES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.57 грн |
| 143+ | 2.97 грн |
| 204+ | 2.09 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.70 грн |
| PE4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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од. на суму грн.
| PE4105C3C6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PE4136C2A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 0.8µA
Capacitance: 0.1nF
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 0.8µA
Capacitance: 0.1nF
Type of diode: TVS
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Мінімальне замовлення: 3000 шт
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од. на суму грн.
| PE4136C2A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.1nF
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Breakdown voltage: 40V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 1µA
Capacitance: 0.1nF
Type of diode: TVS
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Мінімальне замовлення: 3000 шт
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| PE4307ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.7V; 12.9A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 7.7V
Max. forward impulse current: 12.9A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 7V
Leakage current: 1µA
Number of channels: 1
Capacitance: 0.16nF
Category: Protection diodes - arrays
Description: Diode: TVS; 7.7V; 12.9A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 7.7V
Max. forward impulse current: 12.9A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 7V
Leakage current: 1µA
Number of channels: 1
Capacitance: 0.16nF
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Мінімальне замовлення: 5000 шт
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од. на суму грн.
| PE4312C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4312C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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| PE4312C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4312CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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Мінімальне замовлення: 5000 шт
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| PE4312ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| PE4315C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 7.8A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 15.5V
Max. forward impulse current: 7.8A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 65pF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 7.8A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 15.5V
Max. forward impulse current: 7.8A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 65pF
Type of diode: TVS
Number of channels: 2
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Мінімальне замовлення: 3000 шт
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| PE4336ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
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Мінімальне замовлення: 5000 шт
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| PE4512C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 17.4A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 0.195nF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 17.4A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 0.195nF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4512CS_R1_00701 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 12V; 17.4A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 1
Capacitance: 0.195nF
Category: Protection diodes - arrays
Description: Diode: TVS; 12V; 17.4A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 1
Capacitance: 0.195nF
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Мінімальне замовлення: 5000 шт
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| PE4724L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4724L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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Мінімальне замовлення: 3000 шт
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| PE4728L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
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Мінімальне замовлення: 3000 шт
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| PE9180C1A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
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| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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| PEC1605M1Q-AU_R1_005A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
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Мінімальне замовлення: 10000 шт
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| PEC1605M1Q_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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| PEC3205C2C_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| PEC3205C2E_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
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Мінімальне замовлення: 4000 шт
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| PEC3205CS_R1_00701 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| PEC3205ES-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| PEC3205ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
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Мінімальне замовлення: 5000 шт
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| PEC3205M1Q_R1_00201 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
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| PEC3205S1Q_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
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Мінімальне замовлення: 10000 шт
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| PEC33712C2A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
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Мінімальне замовлення: 3000 шт
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| PEC33712C2A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Mounting: SMD
Capacitance: 35pF
Max. off-state voltage: 7...12V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Mounting: SMD
Capacitance: 35pF
Max. off-state voltage: 7...12V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
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| PEC3827CS-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 28V; 3A; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Application: automotive industry
Max. off-state voltage: 27V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 18pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 28V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 28V; 3A; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Application: automotive industry
Max. off-state voltage: 27V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 18pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 28V
Max. forward impulse current: 3A
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Мінімальне замовлення: 5000 шт
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| PEC4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
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Мінімальне замовлення: 3000 шт
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| PEC4105CS_R1_00701 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
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Мінімальне замовлення: 5000 шт
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| PG4007-AU_R2_100A1 |
Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
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| PJ30072S6_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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| PJ4L40W6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
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Мінімальне замовлення: 3000 шт
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| PJA138K-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1614 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.62 грн |
| 80+ | 5.34 грн |
| 112+ | 3.79 грн |
| 500+ | 2.88 грн |
| 1000+ | 2.52 грн |
| PJA3400-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Mounting: SMD
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| PJA3400_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
Mounting: SMD
Pulsed drain current: 19.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
Mounting: SMD
Pulsed drain current: 19.6A
на замовлення 1070 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.67 грн |
| 31+ | 14.08 грн |
| 100+ | 8.74 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.51 грн |