Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1398) > Сторінка 20 з 24
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJSD08TS-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Mounting: SMD Case: SOD523 Application: automotive industry Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD12TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOD523 Mounting: SMD Case: SOD523 Application: automotive industry Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD15TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOD523 Mounting: SMD Case: SOD523 Application: automotive industry Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Mounting: SMD Case: SOD523 Application: automotive industry Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 29.4V; 0.35kW; SOD323 Type of diode: TVS Breakdown voltage: 29.4V Peak pulse power dissipation: 0.35kW Mounting: SMD Case: SOD323 Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOD523 Mounting: SMD Case: SOD523 Application: automotive industry Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD36W_R1_00001 | PanJit Semiconductor | PJSD36W-R1 Unidirectional TVS SMD diodes |
на замовлення 4635 шт: термін постачання 14-21 дні (днів) |
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| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23 Type of diode: TVS Breakdown voltage: 29.4V Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJT138K-AU_R1_000A1 | PanJit Semiconductor | PJT138K-AU-R1 Multi channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| PJT7002KDW_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Case: SOT363 Gate-source voltage: 10V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V кількість в упаковці: 1 шт |
на замовлення 2685 шт: термін постачання 14-21 дні (днів) |
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Case: SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V |
на замовлення 2685 шт: термін постачання 21-30 дні (днів) |
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| PJT7603_R1_00001 | PanJit Semiconductor |
PJT7603-R1 Multi channel transistors |
на замовлення 2880 шт: термін постачання 14-21 дні (днів) |
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| PJT7800_R1_00001 | PanJit Semiconductor |
PJT7800-R1 Multi channel transistors |
на замовлення 5978 шт: термін постачання 14-21 дні (днів) |
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| PJT7801_R1_00001 | PanJit Semiconductor |
PJT7801-R1 Multi channel transistors |
на замовлення 2845 шт: термін постачання 14-21 дні (днів) |
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| PJT7808_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJT7838_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Kind of package: reel; tape Type of transistor: N-MOSFET x2 Case: SOT363 Polarisation: unipolar Gate charge: 0.95nC Power dissipation: 0.35W Drain current: 0.4A Pulsed drain current: 1.2A On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 50V Kind of channel: enhancement Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 7648 шт: термін постачання 14-21 дні (днів) |
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PJT7838_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Kind of package: reel; tape Type of transistor: N-MOSFET x2 Case: SOT363 Polarisation: unipolar Gate charge: 0.95nC Power dissipation: 0.35W Drain current: 0.4A Pulsed drain current: 1.2A On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 50V Kind of channel: enhancement Mounting: SMD |
на замовлення 7648 шт: термін постачання 21-30 дні (днів) |
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| PJUSB05-4_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJUSB208_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJW4P06A-AU_R2_007A1 | PanJit Semiconductor | PJW4P06A-AU-R2 SMD P channel transistors |
на замовлення 3187 шт: термін постачання 14-21 дні (днів) |
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| PJW4P06A_R2_00001 | PanJit Semiconductor |
PJW4P06A-R2 SMD P channel transistors |
на замовлення 840 шт: термін постачання 14-21 дні (днів) |
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PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1nC кількість в упаковці: 1 шт |
на замовлення 3935 шт: термін постачання 14-21 дні (днів) |
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PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1nC |
на замовлення 3935 шт: термін постачання 21-30 дні (днів) |
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| PJX138L_R1_00002 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 0.8A Drain current: 0.16A Gate charge: 0.7nC Power dissipation: 223W On-state resistance: 4.2Ω Gate-source voltage: ±20V Case: SOT563 Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.95/1.1nC кількість в упаковці: 1 шт |
на замовлення 1927 шт: термін постачання 14-21 дні (днів) |
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PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.95/1.1nC |
на замовлення 1927 шт: термін постачання 21-30 дні (днів) |
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| PJX8872B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PM808LL_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 170A; M8 Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 170A Case: M8 Electrical mounting: SMT Max. forward voltage: 0.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS5915-S26_S1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB032N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB032N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMP032N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC Pulsed drain current: 480A кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 14-21 дні (днів) |
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC Pulsed drain current: 480A |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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| PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
PSMP055N08NS1-T0 THT N channel transistors |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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| PSMQB280N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSMQC042N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC280N10LS2-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC280N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQE090N08LS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 55A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH18B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123HE Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH18B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123HE Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
PZ1AL18B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PZA1AL18B_R1_00701 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PZD22B22C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323 Type of diode: Zener Semiconductor structure: common anode; double Tolerance: ±5% Case: SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Zener voltage: 22V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZD22B22C_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323 Type of diode: Zener Semiconductor structure: common anode; double Tolerance: ±5% Case: SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Zener voltage: 22V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZD22B5V6C-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SOT323 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| PJSD08TS-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PJSD12TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PJSD15TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PJSD24TS-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36CW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PJSD36W_R1_00001 |
Виробник: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
PJSD36W-R1 Unidirectional TVS SMD diodes
на замовлення 4635 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.26 грн |
| 189+ | 6.20 грн |
| 518+ | 5.90 грн |
| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 0.35kW; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
PJT138K-AU-R1 Multi channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.17 грн |
| 204+ | 5.75 грн |
| 559+ | 5.44 грн |
| PJT7002KDW_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: SOT363
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: SOT363
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
кількість в упаковці: 1 шт
на замовлення 2685 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.63 грн |
| 11+ | 28.31 грн |
| 100+ | 17.42 грн |
| 500+ | 13.19 грн |
| 1000+ | 11.91 грн |
| 3000+ | 10.14 грн |
| 6000+ | 9.25 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 19+ | 22.72 грн |
| 100+ | 14.52 грн |
| 500+ | 10.99 грн |
| 1000+ | 9.92 грн |
| PJT7603_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
PJT7603-R1 Multi channel transistors
на замовлення 2880 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.68 грн |
| 204+ | 5.75 грн |
| 559+ | 5.44 грн |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7800-R1 Multi channel transistors
PJT7800-R1 Multi channel transistors
на замовлення 5978 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.91 грн |
| 173+ | 6.79 грн |
| 475+ | 6.40 грн |
| PJT7801_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
PJT7801-R1 Multi channel transistors
на замовлення 2845 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.66 грн |
| 169+ | 6.99 грн |
| 463+ | 6.59 грн |
| PJT7808_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7838_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 7648 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.21 грн |
| 13+ | 23.61 грн |
| 100+ | 14.17 грн |
| 500+ | 10.43 грн |
| 1000+ | 9.25 грн |
| 3000+ | 7.77 грн |
| 6000+ | 7.28 грн |
| PJT7838_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
на замовлення 7648 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.68 грн |
| 22+ | 18.94 грн |
| 100+ | 11.81 грн |
| 500+ | 8.69 грн |
| 1000+ | 7.71 грн |
| 3000+ | 6.48 грн |
| 6000+ | 6.07 грн |
| PJUSB05-4_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PJUSB208_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PJUSB208_S1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW4P06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
PJW4P06A-AU-R2 SMD P channel transistors
на замовлення 3187 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.39 грн |
| 69+ | 17.12 грн |
| 188+ | 16.24 грн |
| PJW4P06A_R2_00001 |
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Виробник: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
PJW4P06A-R2 SMD P channel transistors
на замовлення 840 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.17 грн |
| 89+ | 13.09 грн |
| 245+ | 12.40 грн |
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
кількість в упаковці: 1 шт
на замовлення 3935 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.26 грн |
| 23+ | 13.90 грн |
| 100+ | 7.63 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.49 грн |
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
на замовлення 3935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 37+ | 11.15 грн |
| 100+ | 6.36 грн |
| 500+ | 4.82 грн |
| 1000+ | 4.58 грн |
| PJX138L_R1_00002 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| PJX8603_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
кількість в упаковці: 1 шт
на замовлення 1927 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.49 грн |
| 20+ | 15.64 грн |
| 100+ | 10.53 грн |
| 500+ | 8.46 грн |
| 1000+ | 7.77 грн |
| 2000+ | 7.28 грн |
| 4000+ | 6.89 грн |
| PJX8603_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
на замовлення 1927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 33+ | 12.55 грн |
| 100+ | 8.77 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.48 грн |
| PJX8872B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PM808LL_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 170A; M8
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 170A
Case: M8
Electrical mounting: SMT
Max. forward voltage: 0.95V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 170A; M8
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 170A
Case: M8
Electrical mounting: SMT
Max. forward voltage: 0.95V
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| PS5915-S26_S1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
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| PSMB032N08NS1_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PSMB032N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PSMB033N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMN028N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMP032N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMP033N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.91 грн |
| 10+ | 131.83 грн |
| 50+ | 116.12 грн |
| PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 190.76 грн |
| 10+ | 105.79 грн |
| PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
PSMP055N08NS1-T0 THT N channel transistors
PSMP055N08NS1-T0 THT N channel transistors
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.22 грн |
| 18+ | 67.90 грн |
| 48+ | 63.96 грн |
| PSMQB280N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC042N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC060N06LS1-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PSMQC060N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQC120N06LS1-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMQC120N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMQC280N10LS2-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMQC280N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMQE090N08LS2_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 55A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 55A
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| PZ1AH18B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Application: automotive industry
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| PZ1AH18B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123HE; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123HE
Semiconductor structure: single diode
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| PZ1AL18B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Application: automotive industry
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| PZA1AL18B_R1_00701 |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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| PZD22B22C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Tolerance: ±5%
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Zener voltage: 22V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Tolerance: ±5%
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Zener voltage: 22V
Application: automotive industry
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| PZD22B22C_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Tolerance: ±5%
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Zener voltage: 22V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 22V; SMD; reel,tape; SOT323
Type of diode: Zener
Semiconductor structure: common anode; double
Tolerance: ±5%
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Zener voltage: 22V
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| PZD22B5V6C-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SOT323
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Application: automotive industry
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