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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP100N06SA-AU_T0_006A1 PanJit Semiconductor PJP100N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ1905_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1906_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_R1_00201 PanJit Semiconductor PJQ1916.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_S1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4435EP-AU_R2_002A1 PanJit Semiconductor PJQ4435EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN3333-8
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -138A
Drain current: -41A
Drain-source voltage: -30V
Gate charge: 34nC
On-state resistance: 12.5mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Case: DFN3333-8
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PJQ4437EP-AU_R2_002A1 PanJit Semiconductor PJQ4437EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
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PJQ4437EP_R2_00201 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
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PJQ4446P-AU_R2_000A1 PanJit Semiconductor PJQ4446P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
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PJQ4463AP-AU_R2_000A1 PanJit Semiconductor PJQ4463AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
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PJQ4463AP_R2_00001 PanJit Semiconductor PJQ4463AP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
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PJQ4464AP-AU_R2_000A1 PanJit Semiconductor PJQ4464AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
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PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 PanJit Semiconductor PJQ4465AP-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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PJQ4465AP_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4466P_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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PJQ4468AP-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ4544S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 PanJit Semiconductor PJQ4546VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 PanJit Semiconductor PJQ4548P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6VP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 PanJit Semiconductor PJQ4548VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
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PJQ4594P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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PJQ4670AP_R2_00201 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ5435E-AU_R2_006A1 PanJit Semiconductor PJQ5435E-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
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PJQ5435E_R2_00201 PanJit Semiconductor PJQ5435E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
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PJQ5458A-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5526-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
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PJQ5526_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5808-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
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PJQ5846-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
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PJQ5846_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
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PJS6600_S1_00001 PanJit Semiconductor PJS6600 Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6601-AU_S1_000A1 PanJit Semiconductor PJS6601-AU.pdf Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)
17+28.06 грн
24+17.99 грн
100+13.70 грн
250+12.19 грн
500+11.18 грн
1000+10.17 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PJS6602_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6603_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6604_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6815_S1_00001 PanJit Semiconductor PJS6815.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
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PJSD03LCFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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PJSD03TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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PJSD05CFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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PJSD05CTM_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
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 Мінімальне замовлення: 8000 шт
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PJSD05CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
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 Мінімальне замовлення: 5000 шт
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PJSD05CW_R1_00001 PanJit Semiconductor PJSD36CW Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Capacitance: 0.11nF
Leakage current: 5µA
Application: automotive industry
Version: ESD
на замовлення 4548 шт:
термін постачання 14-30 дні (днів)
36+12.67 грн
47+8.99 грн
100+6.81 грн
250+6.05 грн
500+5.63 грн
1000+5.46 грн
2500+5.04 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
PJSD24TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
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 Мінімальне замовлення: 5000 шт
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PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
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PJSD36CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
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 Мінімальне замовлення: 5000 шт
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PJSD36CW_R1_00001 PanJit Semiconductor PJSD05CW_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
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 Мінімальне замовлення: 5000 шт
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PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
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 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJSOT36_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
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 Мінімальне замовлення: 3000 шт
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)
14+32.59 грн
23+18.66 грн
100+11.77 грн
500+8.91 грн
1000+7.90 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
PJT7603_R1_00001 PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
24+19.01 грн
35+12.02 грн
100+6.62 грн
500+5.08 грн
1000+4.72 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
PJMP190N65FR2_T0_00601 PJMP190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP100N06SA-AU_T0_006A1 PJP100N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PJx18N20.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ1905_R1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1906_R1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_R1_00201 PJQ1916.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_S1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4435EP-AU_R2_002A1 PJQ4435EP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN3333-8
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PJQ4435EP_R2_00201 PJQ4435EP.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Pulsed drain current: -138A
Drain current: -41A
Drain-source voltage: -30V
Gate charge: 34nC
On-state resistance: 12.5mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
Case: DFN3333-8
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PJQ4437EP-AU_R2_002A1 PJQ4437EP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
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PJQ4437EP_R2_00201
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
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PJQ4446P-AU_R2_000A1 PJQ4446P-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
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PJQ4463AP-AU_R2_000A1 PJQ4463AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
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PJQ4463AP_R2_00001 PJQ4463AP.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
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PJQ4464AP-AU_R2_000A1 PJQ4464AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
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PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU.pdf
PJQ4465AP-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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PJQ4465AP_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4466P_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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PJQ4468AP-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ4544S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4548P-AU_R2_002A1 PJQ4548P-AU.pdf
PJQ4548P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
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PJQ4594P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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PJQ4670AP_R2_00201
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ5435E-AU_R2_006A1 PJQ5435E-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
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PJQ5435E_R2_00201 PJQ5435E.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
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PJQ5458A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5526-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
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PJQ5526_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5808-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
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PJQ5846-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
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PJQ5846_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
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PJS6600_S1_00001 PJS6600
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6601-AU_S1_000A1 PJS6601-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6601_S1_00001
PJS6601_S1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
17+28.06 грн
24+17.99 грн
100+13.70 грн
250+12.19 грн
500+11.18 грн
1000+10.17 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PJS6602_S1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6603_S1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6604_S1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6815_S1_00001 PJS6815.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
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PJSD03LCFN2_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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PJSD03TS_R1_00001 PJSD03TS_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSD05CFN2_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PJSD05CTM_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
PJSD05CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSD05CW_R1_00001 PJSD36CW
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
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PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Capacitance: 0.11nF
Leakage current: 5µA
Application: automotive industry
Version: ESD
на замовлення 4548 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
36+12.67 грн
47+8.99 грн
100+6.81 грн
250+6.05 грн
500+5.63 грн
1000+5.46 грн
2500+5.04 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
PJSD24TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
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PJSD36CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSD36CW_R1_00001 PJSD05CW_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
товару немає в наявності
Мінімальне замовлення: 5000 шт
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PJSOT24C-05-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
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PJSOT36_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
14+32.59 грн
23+18.66 грн
100+11.77 грн
500+8.91 грн
1000+7.90 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
24+19.01 грн
35+12.02 грн
100+6.62 грн
500+5.08 грн
1000+4.72 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
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