Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (726) > Сторінка 6 з 13
| Фото | Назва | Виробник | Інформація |
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GBU1010_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 0.24kA Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBU1510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| GBU2008LV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 0.4kA Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.92V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU2506HULV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 380A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 380A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.74V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU2506LV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.4kA Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.98V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU2506ULV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.75V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU2510H_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBU2510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU410_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 160A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 160A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBU810_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 220A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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GS1004FL-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A Kind of package: reel; tape Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Leakage current: 50µA Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.4kV Case: SOD123F Application: automotive industry |
на замовлення 1424 шт: термін постачання 14-30 дні (днів) |
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GS1J-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
на замовлення 3568 шт: термін постачання 14-30 дні (днів) |
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GS1J-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1J_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1M-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
на замовлення 4162 шт: термін постачання 14-30 дні (днів) |
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GS1M-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1MWG_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1MWG_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1M_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
на замовлення 655 шт: термін постачання 14-30 дні (днів) |
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GS1M_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| KBJ1510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 180A Version: flat Case: KBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KBJ2010_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A Electrical mounting: THT Case: KBJ2 Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 1kV Version: flat Leads: flat pin |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LL4148_R1_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 7939 шт: термін постачання 14-30 дні (днів) |
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| LL4148_R2_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 49890 шт: термін постачання 14-30 дні (днів) |
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MBR20200CT_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.9V Max. forward impulse current: 200A Kind of package: Ammo Pack Leakage current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR2200_AY_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Case: DO15 Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 20mA Kind of package: Ammo Pack |
на замовлення 3243 шт: термін постачання 14-30 дні (днів) |
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MBR310AFC-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMAF-C Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 0.3mA Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER1602CT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns Case: ITO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Reverse recovery time: 43ns Leakage current: 75µA Max. forward voltage: 0.95V Load current: 16A Max. off-state voltage: 200V Max. forward impulse current: 120A Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER1602FCT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns Case: ITO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Reverse recovery time: 43ns Leakage current: 75µA Max. forward voltage: 0.95V Load current: 16A Max. off-state voltage: 200V Max. forward impulse current: 120A Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER1DMB_R2_00601 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 35A Leakage current: 20µA Kind of package: reel; tape |
на замовлення 2969 шт: термін постачання 14-30 дні (днів) |
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MER2DAFC-AU_R1_007A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 40uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMAF-C Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2625 шт: термін постачання 14-30 дні (днів) |
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MER2DAH_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 17ns; SOD123HE; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 17ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123HE Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MER2DAL-AU_R1_007A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2675 шт: термін постачання 14-30 дні (днів) |
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MER2DAL_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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MER2DBF_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB flat; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB flat Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 1459 шт: термін постачання 14-30 дні (днів) |
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MER2DMA-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER2DMA_R1_00601 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 1797 шт: термін постачання 14-30 дні (днів) |
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MER2DMB_R2_00601 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| MMBT2222A-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2222ATB_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT523 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2222AW_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2222A_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2907A-AU_R1_000A1 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2907AW_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MMBT2907A_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 2885 шт: термін постачання 14-30 дні (днів) |
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| MMBT3904-AU_R1_005A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3904FN3_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: DFN1006-3 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MMBT3904W_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape |
на замовлення 2965 шт: термін постачання 14-30 дні (днів) |
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|
MMBT3904_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1650 шт: термін постачання 14-30 дні (днів) |
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| MMBT3906-AU_R1_005A1 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906FN3_R1_00501 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: DFN1006-3 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906W_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906_R1_00501 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT4401-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT4401W_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT4401_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT4403W_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MMBT4403_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 2038 шт: термін постачання 14-30 дні (днів) |
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| MMBT5401-AU_R1_000A1 | PanJit Semiconductor |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| GBU1010_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| GBU1510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| GBU2008LV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.92V
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од. на суму грн.
| GBU2506HULV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 380A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.74V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 380A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.74V
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В кошику
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| GBU2506LV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.98V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.98V
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| GBU2506ULV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
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В кошику
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| GBU2510H_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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В кошику
од. на суму грн.
| GBU2510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| GBU410_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 160A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 160A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 160A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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В кошику
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| GBU810_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.72 грн |
| 10+ | 42.33 грн |
| 20+ | 40.90 грн |
| GS1004FL-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Case: SOD123F
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Case: SOD123F
Application: automotive industry
на замовлення 1424 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.55 грн |
| 105+ | 4.06 грн |
| 124+ | 3.42 грн |
| 250+ | 3.08 грн |
| 500+ | 2.72 грн |
| 1000+ | 2.59 грн |
| GS1J-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
на замовлення 3568 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.83 грн |
| 60+ | 7.10 грн |
| 100+ | 4.98 грн |
| 250+ | 3.98 грн |
| 500+ | 2.99 грн |
| 1000+ | 2.69 грн |
| 1800+ | 2.49 грн |
| GS1J-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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| GS1J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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| GS1J_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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| GS1M-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
на замовлення 4162 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.37 грн |
| 103+ | 4.14 грн |
| 121+ | 3.50 грн |
| 250+ | 3.14 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.78 грн |
| 1800+ | 2.52 грн |
| GS1M-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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| GS1MWG_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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| GS1MWG_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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| GS1M_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 655 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.28 грн |
| 84+ | 5.07 грн |
| 125+ | 3.41 грн |
| 500+ | 2.43 грн |
| GS1M_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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| KBJ1510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| KBJ2010_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Case: KBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Case: KBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
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| LL4148_R1_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 7939 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.46 грн |
| 132+ | 3.21 грн |
| 203+ | 2.09 грн |
| 250+ | 1.79 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.38 грн |
| 2500+ | 1.06 грн |
| 5000+ | 0.87 грн |
| LL4148_R2_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 49890 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 188+ | 2.42 грн |
| 278+ | 1.52 грн |
| 368+ | 1.15 грн |
| 500+ | 1.03 грн |
| 1000+ | 0.95 грн |
| 2500+ | 0.91 грн |
| 10000+ | 0.82 грн |
| 20000+ | 0.80 грн |
| MBR20200CT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
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| MBR2200_AY_00001 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO15
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 20mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO15
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 20mA
Kind of package: Ammo Pack
на замовлення 3243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.75 грн |
| 30+ | 14.36 грн |
| 37+ | 11.49 грн |
| 100+ | 9.72 грн |
| 250+ | 8.62 грн |
| 500+ | 7.77 грн |
| 1000+ | 6.93 грн |
| 3000+ | 6.84 грн |
| MBR310AFC-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| MER1602CT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 43ns
Leakage current: 75µA
Max. forward voltage: 0.95V
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 43ns
Leakage current: 75µA
Max. forward voltage: 0.95V
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
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| MER1602FCT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 43ns
Leakage current: 75µA
Max. forward voltage: 0.95V
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 120A; ITO220AB; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 43ns
Leakage current: 75µA
Max. forward voltage: 0.95V
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
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| MER1DMB_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 35A
Leakage current: 20µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 35A
Leakage current: 20µA
Kind of package: reel; tape
на замовлення 2969 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.38 грн |
| 40+ | 10.56 грн |
| 50+ | 8.45 грн |
| 100+ | 6.34 грн |
| 250+ | 5.66 грн |
| 500+ | 5.32 грн |
| 1000+ | 5.07 грн |
| MER2DAFC-AU_R1_007A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 40uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMAF-C
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 40uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMAF-C
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2625 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.21 грн |
| 23+ | 18.76 грн |
| 50+ | 14.20 грн |
| 100+ | 12.68 грн |
| 250+ | 10.82 грн |
| 500+ | 9.72 грн |
| 1000+ | 8.70 грн |
| MER2DAH_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 17ns; SOD123HE; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123HE
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 17ns; SOD123HE; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123HE
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 30.03 грн |
| 27+ | 16.06 грн |
| 100+ | 10.31 грн |
| 250+ | 8.70 грн |
| 500+ | 7.60 грн |
| 1000+ | 6.76 грн |
| 3000+ | 5.49 грн |
| MER2DAL-AU_R1_007A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2675 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.39 грн |
| 28+ | 15.29 грн |
| 100+ | 11.32 грн |
| 500+ | 8.87 грн |
| 1000+ | 7.77 грн |
| MER2DAL_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 8000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.10 грн |
| 61+ | 6.93 грн |
| 100+ | 6.14 грн |
| 500+ | 5.15 грн |
| 1000+ | 4.64 грн |
| 3000+ | 4.30 грн |
| 6000+ | 3.96 грн |
| MER2DBF_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB flat; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB flat
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB flat; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB flat
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 1459 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.75 грн |
| 50+ | 17.74 грн |
| 100+ | 15.72 грн |
| 500+ | 10.14 грн |
| 1000+ | 7.44 грн |
| MER2DMA-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Application: automotive industry
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В кошику
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| MER2DMA_R1_00601 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 1797 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.11 грн |
| 34+ | 12.59 грн |
| 50+ | 10.06 грн |
| 100+ | 8.96 грн |
| 250+ | 7.52 грн |
| 500+ | 6.84 грн |
| 1000+ | 6.00 грн |
| MER2DMB_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.94 грн |
| 25+ | 17.07 грн |
| 100+ | 10.65 грн |
| 500+ | 7.77 грн |
| 1000+ | 6.76 грн |
| 3000+ | 6.25 грн |
| MMBT2222A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
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| MMBT2222ATB_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MMBT2222AW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MMBT2222A_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MMBT2907A-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| MMBT2907AW_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MMBT2907A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 2885 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.37 грн |
| 109+ | 3.89 грн |
| 193+ | 2.20 грн |
| 500+ | 1.88 грн |
| MMBT3904-AU_R1_005A1 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3904FN3_R1_00501 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MMBT3904W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 10.01 грн |
| 76+ | 5.58 грн |
| 130+ | 3.27 грн |
| 500+ | 2.30 грн |
| 1000+ | 1.99 грн |
| MMBT3904_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1650 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.28 грн |
| 105+ | 4.06 грн |
| 178+ | 2.38 грн |
| 500+ | 1.67 грн |
| 1000+ | 1.45 грн |
| MMBT3906-AU_R1_005A1 |
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| MMBT3906FN3_R1_00501 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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од. на суму грн.
| MMBT3906_R1_00501 |
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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од. на суму грн.
| MMBT4401-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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од. на суму грн.
| MMBT4401W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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од. на суму грн.
| MMBT4401_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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од. на суму грн.
| MMBT4403W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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од. на суму грн.
| MMBT4403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 2038 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 10.01 грн |
| 70+ | 6.08 грн |
| 117+ | 3.62 грн |
| 500+ | 2.55 грн |
| 1000+ | 2.21 грн |
| MMBT5401-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
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од. на суму грн.
















