Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1049) > Сторінка 12 з 18
| Фото | Назва | Виробник | Інформація |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
на замовлення 968 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 968 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| P6SMBJ36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 365 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 5987 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 5987 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 865 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 865 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 595 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 595 шт: термін постачання 21-30 дні (днів) |
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| P6SMBJ58A-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P6SMBJ58A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P6SMBJ58CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P6SMBJ58CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 520 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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| P6SMBJ6.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P6SMBJ6.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMBJ Leakage current: 0.2mA Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 430 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMBJ Leakage current: 0.2mA Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Peak pulse power dissipation: 0.6kW Features of semiconductor devices: glass passivated |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
PBHV8110DA-AU-R1 NPN SMD transistors |
на замовлення 47 шт: термін постачання 7-14 дні (днів) |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
PCDH2065CCG1-T0 THT Schottky diodes |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
PDZ5.1B-AU-R1 SMD Zener diodes |
на замовлення 2560 шт: термін постачання 7-14 дні (днів) |
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PDZ9.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZ9.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PE1805C4A6_R1_00001 | PanJit Semiconductor |
PE1805C4A6-R1 Protection diodes - arrays |
на замовлення 8470 шт: термін постачання 7-14 дні (днів) |
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| PE1805C4C6_R1_00001 | PanJit Semiconductor |
PE1805C4C6-R1 Protection diodes - arrays |
на замовлення 2970 шт: термін постачання 7-14 дні (днів) |
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| PE3324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOD523 Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6...7.5V кількість в упаковці: 1 шт |
на замовлення 3900 шт: термін постачання 7-14 дні (днів) |
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOD523 Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6...7.5V |
на замовлення 3900 шт: термін постачання 21-30 дні (днів) |
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| PE4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Mounting: SMD Case: SOT23 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 2 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 7.5V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4105C3C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3 Mounting: SMD Case: SOT363 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 3 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT323 Type of diode: TVS Mounting: SMD Case: SOT323 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PE4324CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3112M1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Type of diode: TVS Mounting: SMD Case: DFN1006-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3205ES-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Type of diode: TVS Mounting: SMD Case: SOD523 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 50nA Number of channels: 2 Kind of package: reel; tape Capacitance: 30pF Application: automotive industry Version: ESD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...30.3V Max. forward impulse current: 7A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 50nA Number of channels: 2 Kind of package: reel; tape Capacitance: 30pF Application: automotive industry Version: ESD кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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| PEC33712C2A_R1_00001 | PanJit Semiconductor |
PEC33712C2A-R1 Protection diodes - arrays |
на замовлення 3013 шт: термін постачання 7-14 дні (днів) |
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| PEC3815AS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD123 Application: automotive industry Mounting: SMD Type of diode: TVS Case: SOD123 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4102C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23 Mounting: SMD Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Case: SOT23 Type of diode: TVS Leakage current: 0.5µA Max. off-state voltage: 2.5V Breakdown voltage: 4V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4102CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; SOD323 Mounting: SMD Case: SOD323 Type of diode: TVS Leakage current: 0.5µA Breakdown voltage: 4V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4103C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Mounting: SMD Case: SOT23 Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4103CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 4.5V; 0.35kW; bidirectional; SOD323 Mounting: SMD Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Case: SOD323 Type of diode: TVS Leakage current: 0.5µA Max. off-state voltage: 3.3V Breakdown voltage: 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Mounting: SMD Case: SOT23 Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC4105CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Mounting: SMD Case: SOD323 Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJA138K-AU_R1_000A1 | PanJit Semiconductor |
PJA138K-AU-R1 SMD N channel transistors |
на замовлення 2736 шт: термін постачання 7-14 дні (днів) |
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| PJA3400_R1_00001 | PanJit Semiconductor |
PJA3400-R1 SMD N channel transistors |
на замовлення 2675 шт: термін постачання 7-14 дні (днів) |
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| PJA3401A_R1_00001 | PanJit Semiconductor |
PJA3401A-R1 SMD P channel transistors |
на замовлення 1793 шт: термін постачання 7-14 дні (днів) |
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| PJA3402_R1_00501 | PanJit Semiconductor | PJA3402-R1 SMD N channel transistors |
на замовлення 9015 шт: термін постачання 7-14 дні (днів) |
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| PJA3403_R1_00001 | PanJit Semiconductor |
PJA3403-R1 SMD P channel transistors |
на замовлення 2314 шт: термін постачання 7-14 дні (днів) |
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| PJA3404-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| P6SMBJ33CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 968 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.73 грн |
| 25+ | 16.84 грн |
| 100+ | 11.76 грн |
| 500+ | 9.51 грн |
| P6SMBJ33CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 968 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.48 грн |
| 15+ | 20.99 грн |
| 100+ | 14.11 грн |
| 500+ | 11.41 грн |
| P6SMBJ33CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ36CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ36CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.32 грн |
| 17+ | 19.12 грн |
| 100+ | 12.21 грн |
| 500+ | 9.20 грн |
| 800+ | 8.40 грн |
| 1600+ | 7.80 грн |
| P6SMBJ36CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.94 грн |
| 28+ | 15.34 грн |
| 100+ | 10.17 грн |
| P6SMBJ40CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 5987 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.94 грн |
| 18+ | 17.98 грн |
| 25+ | 13.91 грн |
| 100+ | 10.41 грн |
| 250+ | 9.30 грн |
| 500+ | 8.20 грн |
| 1000+ | 7.70 грн |
| P6SMBJ40CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.45 грн |
| 29+ | 14.42 грн |
| 36+ | 11.59 грн |
| 100+ | 8.67 грн |
| 250+ | 7.75 грн |
| 500+ | 6.84 грн |
| 1000+ | 6.42 грн |
| 3000+ | 6.34 грн |
| P6SMBJ5.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 865 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.02 грн |
| 18+ | 18.29 грн |
| 100+ | 12.11 грн |
| 500+ | 9.30 грн |
| 800+ | 8.60 грн |
| 1600+ | 7.70 грн |
| 2400+ | 7.10 грн |
| P6SMBJ5.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.35 грн |
| 29+ | 14.67 грн |
| 100+ | 10.09 грн |
| 500+ | 7.75 грн |
| 800+ | 7.17 грн |
| P6SMBJ5.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 595 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.87 грн |
| 14+ | 23.17 грн |
| 100+ | 14.81 грн |
| 500+ | 11.41 грн |
| 800+ | 10.61 грн |
| 1600+ | 9.61 грн |
| 2400+ | 9.10 грн |
| P6SMBJ5.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.22 грн |
| 23+ | 18.59 грн |
| 100+ | 12.34 грн |
| 500+ | 9.51 грн |
| P6SMBJ58A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ58A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| P6SMBJ58CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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| P6SMBJ58CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.94 грн |
| 18+ | 17.35 грн |
| 100+ | 11.71 грн |
| 500+ | 9.00 грн |
| 800+ | 8.30 грн |
| 1600+ | 7.40 грн |
| 2400+ | 6.90 грн |
| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.45 грн |
| 30+ | 13.92 грн |
| 100+ | 9.76 грн |
| 500+ | 7.50 грн |
| P6SMBJ6.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P6SMBJ6.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.17 грн |
| 16+ | 19.74 грн |
| 100+ | 12.91 грн |
| 500+ | 9.81 грн |
| 800+ | 8.90 грн |
| 1600+ | 8.10 грн |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.14 грн |
| 27+ | 15.84 грн |
| 100+ | 10.76 грн |
| PBHV8050SA_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
PBHV8110DA-AU-R1 NPN SMD transistors
PBHV8110DA-AU-R1 NPN SMD transistors
на замовлення 47 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.21 грн |
| 212+ | 5.63 грн |
| 582+ | 5.32 грн |
| PCDB1065G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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| PCDF0865G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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| PCDH2065CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
PCDH2065CCG1-T0 THT Schottky diodes
PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 506.42 грн |
| 4+ | 347.19 грн |
| 10+ | 328.18 грн |
| PDZ5.1B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
PDZ5.1B-AU-R1 SMD Zener diodes
PDZ5.1B-AU-R1 SMD Zener diodes
на замовлення 2560 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.32 грн |
| 390+ | 3.05 грн |
| 1072+ | 2.89 грн |
| PDZ9.1B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
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| PDZ9.1B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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| PE1805C4A6_R1_00001 |
|
Виробник: PanJit Semiconductor
PE1805C4A6-R1 Protection diodes - arrays
PE1805C4A6-R1 Protection diodes - arrays
на замовлення 8470 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.43 грн |
| 195+ | 6.13 грн |
| 534+ | 5.80 грн |
| PE1805C4C6_R1_00001 |
|
Виробник: PanJit Semiconductor
PE1805C4C6-R1 Protection diodes - arrays
PE1805C4C6-R1 Protection diodes - arrays
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.10 грн |
| 232+ | 5.13 грн |
| 638+ | 4.85 грн |
| PE3324C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
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од. на суму грн.
| PE4105C1ES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
на замовлення 3900 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 5.39 грн |
| 86+ | 3.64 грн |
| 122+ | 2.46 грн |
| 500+ | 2.10 грн |
| 1000+ | 2.00 грн |
| 5000+ | 1.85 грн |
| 10000+ | 1.82 грн |
| PE4105C1ES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.49 грн |
| 143+ | 2.92 грн |
| 204+ | 2.05 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.67 грн |
| PE4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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| PE4105C3C6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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| PE4324C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
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| PE4324C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
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| PE4324C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
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| PE4324CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
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| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
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| PEC3112M1Q_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
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| PEC3205ES-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Application: automotive industry
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В кошику
од. на суму грн.
| PEC3324C2A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.84 грн |
| 27+ | 15.84 грн |
| 100+ | 10.76 грн |
| 250+ | 9.34 грн |
| 500+ | 8.59 грн |
| 1000+ | 7.84 грн |
| 3000+ | 6.84 грн |
| PEC3324C2A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
Version: ESD
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.40 грн |
| 16+ | 19.74 грн |
| 100+ | 12.91 грн |
| 250+ | 11.21 грн |
| 500+ | 10.31 грн |
| 1000+ | 9.41 грн |
| 3000+ | 8.20 грн |
| PEC33712C2A_R1_00001 |
|
Виробник: PanJit Semiconductor
PEC33712C2A-R1 Protection diodes - arrays
PEC33712C2A-R1 Protection diodes - arrays
на замовлення 3013 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.32 грн |
| 155+ | 7.70 грн |
| 425+ | 7.30 грн |
| 3000+ | 7.27 грн |
| PEC3815AS-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD123
Application: automotive industry
Mounting: SMD
Type of diode: TVS
Case: SOD123
Category: Protection diodes - arrays
Description: Diode: TVS; SOD123
Application: automotive industry
Mounting: SMD
Type of diode: TVS
Case: SOD123
товару немає в наявності
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од. на суму грн.
| PEC4102C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOT23
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOT23
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
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| PEC4102CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; SOD323
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 0.5µA
Breakdown voltage: 4V
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; SOD323
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 0.5µA
Breakdown voltage: 4V
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од. на суму грн.
| PEC4103C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Mounting: SMD
Case: SOT23
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Mounting: SMD
Case: SOT23
Type of diode: TVS
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од. на суму грн.
| PEC4103CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4.5V; 0.35kW; bidirectional; SOD323
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOD323
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Category: Protection diodes - arrays
Description: Diode: TVS; 4.5V; 0.35kW; bidirectional; SOD323
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOD323
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
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од. на суму грн.
| PEC4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Mounting: SMD
Case: SOT23
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Mounting: SMD
Case: SOT23
Type of diode: TVS
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В кошику
од. на суму грн.
| PEC4105CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Mounting: SMD
Case: SOD323
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Mounting: SMD
Case: SOD323
Type of diode: TVS
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од. на суму грн.
| PJA138K-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
PJA138K-AU-R1 SMD N channel transistors
на замовлення 2736 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.45 грн |
| 490+ | 2.43 грн |
| 1345+ | 2.30 грн |
| PJA3400_R1_00001 |
|
Виробник: PanJit Semiconductor
PJA3400-R1 SMD N channel transistors
PJA3400-R1 SMD N channel transistors
на замовлення 2675 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.94 грн |
| 190+ | 6.29 грн |
| 520+ | 5.95 грн |
| PJA3401A_R1_00001 |
|
Виробник: PanJit Semiconductor
PJA3401A-R1 SMD P channel transistors
PJA3401A-R1 SMD P channel transistors
на замовлення 1793 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.66 грн |
| 204+ | 5.84 грн |
| 561+ | 5.53 грн |
| 6000+ | 5.52 грн |
| PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
PJA3402-R1 SMD N channel transistors
PJA3402-R1 SMD N channel transistors
на замовлення 9015 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 254+ | 4.70 грн |
| 696+ | 4.45 грн |
| PJA3403_R1_00001 |
|
Виробник: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
на замовлення 2314 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.63 грн |
| 255+ | 4.67 грн |
| 702+ | 4.41 грн |
| PJA3404-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.