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P4SMAJ18A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ18CA-AU_R1_000A1 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ18CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ200A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 220÷247V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ20A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 22.2...24.5V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 12.3A
Max. off-state voltage: 20V
Application: automotive industry
Leakage current: 1µA
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P4SMAJ20A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 22.2...24.5V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 12.3A
Max. off-state voltage: 20V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P4SMAJ20CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ220A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 242...272V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 1.1A
Max. off-state voltage: 220V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P4SMAJ22A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ22A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ24A-AU_R1_000A1 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ24A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ24CA-AU_R1_000A1 P4SMAJ24CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ24CA_R1_00001 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ26A-AU_R1_000A1 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ26A_R1_00001 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ28A-AU_R1_000A1 PanJit Semiconductor P4SMAJ9.0CA-AU Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ28A_R1_00001 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ28CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ28CA-AU_R2_000A1 P4SMAJ28CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ28CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ30A-AU_R1_000A1 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ30A_R1_00001 P4SMAJ30A_R1_00001 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 1730 шт:
термін постачання 14-30 дні (днів)
25+17.99 грн
37+11.36 грн
100+6.85 грн
500+5.18 грн
Мінімальне замовлення: 25
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P4SMAJ30CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ30CA_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ33A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ33A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ33CA-AU_R1_000A1 P4SMAJ33CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1770 шт:
термін постачання 14-30 дні (днів)
32+14.39 грн
250+11.11 грн
500+9.69 грн
1000+7.77 грн
Мінімальне замовлення: 32
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P4SMAJ33CA-AU_R2_000A1 P4SMAJ33CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ33CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ36A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ36A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ36CA-AU_R1_000A1 P4SMAJ36CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)
21+21.59 грн
100+16.70 грн
250+13.11 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
P4SMAJ40A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ40A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ40CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ40CA_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ43A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ48CA-AU_R1_000A1 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ48CA_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ5.0A_R1_00001 P4SMAJ5.0A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
на замовлення 7510 шт:
термін постачання 14-30 дні (днів)
39+11.69 грн
48+8.77 грн
100+6.51 грн
500+5.93 грн
1000+5.43 грн
1800+4.84 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
P4SMAJ5.0CA_R1_00001 P4SMAJ5.0CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)
24+18.89 грн
39+10.77 грн
100+7.68 грн
250+6.85 грн
500+6.43 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
P4SMAJ51A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ51A_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ54A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ54A_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ54CA-AU_R1_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ54CA_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ58A-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ58A_R1_00001 PanJit Semiconductor P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ58CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ58CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ6.0A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ6.0CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ6.5A_R1_00001 PanJit Semiconductor P4SMAJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ6.5CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ60CA-AU_R1_000A1 PanJit Semiconductor P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ60CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ70A_R1_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ8.0CA_R1_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ18A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ18CA-AU_R1_000A1 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ18CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ200A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 220÷247V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ20A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 22.2...24.5V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 12.3A
Max. off-state voltage: 20V
Application: automotive industry
Leakage current: 1µA
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P4SMAJ20A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 22.2...24.5V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 12.3A
Max. off-state voltage: 20V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P4SMAJ20CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ220A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 242÷272V; 1.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 242...272V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 1.1A
Max. off-state voltage: 220V
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P4SMAJ22A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ22A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ24A-AU_R1_000A1 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ24A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ24CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ24CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ24CA_R1_00001 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ26A-AU_R1_000A1 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ26A_R1_00001 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ28A-AU_R1_000A1 P4SMAJ9.0CA-AU
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ28A_R1_00001 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ28CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ28CA-AU_R2_000A1
P4SMAJ28CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ28CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ30A-AU_R1_000A1 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ30A_R1_00001 P4SMA-AU_SERIES.pdf
P4SMAJ30A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 1730 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.99 грн
37+11.36 грн
100+6.85 грн
500+5.18 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P4SMAJ30CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ30CA_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ33A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ33CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1770 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.39 грн
250+11.11 грн
500+9.69 грн
1000+7.77 грн
Мінімальне замовлення: 32
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P4SMAJ33CA-AU_R2_000A1
P4SMAJ33CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ33CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ36A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ36A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ36CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ36CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.59 грн
100+16.70 грн
250+13.11 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
P4SMAJ40A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ40A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ40CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ40CA_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ43A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ48CA-AU_R1_000A1 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ48CA_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ5.0A_R1_00001
P4SMAJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
на замовлення 7510 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.69 грн
48+8.77 грн
100+6.51 грн
500+5.93 грн
1000+5.43 грн
1800+4.84 грн
Мінімальне замовлення: 39
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P4SMAJ5.0CA_R1_00001
P4SMAJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
24+18.89 грн
39+10.77 грн
100+7.68 грн
250+6.85 грн
500+6.43 грн
Мінімальне замовлення: 24
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P4SMAJ51A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ51A_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ54A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
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P4SMAJ54A_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ54CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ54CA_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ58A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ58A_R1_00001 P4SMA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ58CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ58CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ6.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ6.5A_R1_00001 P4SMAJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ6.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1mA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ60CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Application: automotive industry
Kind of package: reel; tape
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P4SMAJ60CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMAJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P4SMAJ70A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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P4SMAJ8.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.89÷9.83V; 29.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 29.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
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