Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (855) > Сторінка 12 з 15
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJQ4435EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -41A Pulsed drain current: -138A Power dissipation: 13.5W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4439EP_R2_00201 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W Kind of package: reel Mounting: SMD Case: DFN3333-8 Kind of channel: enhancement Type of transistor: P-MOSFET Pulsed drain current: -90A Drain current: -30A Drain-source voltage: -30V Gate charge: 22nC On-state resistance: 19.1mΩ Power dissipation: 10W Gate-source voltage: ±25V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4534P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 9.3mΩ Power dissipation: 10.7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 152A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ4534P_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8 Mounting: SMD Kind of package: reel; tape Case: DFN3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC On-state resistance: 8.9mΩ Power dissipation: 7W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 144A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Power dissipation: 100W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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PJQ5544-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 520A Power dissipation: 100W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1952 шт: термін постачання 14-21 дні (днів) |
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| PJS6421_S1_00001 | PanJit Semiconductor |
PJS6421-S1 SMD P channel transistors |
на замовлення 2941 шт: термін постачання 14-21 дні (днів) |
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PJS6601_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Power dissipation: 1.25W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 95/190mΩ Mounting: SMD Gate charge: 4.6/5.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2648 шт: термін постачання 14-21 дні (днів) |
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PJS6601_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Power dissipation: 1.25W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 95/190mΩ Mounting: SMD Gate charge: 4.6/5.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2648 шт: термін постачання 21-30 дні (днів) |
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PJS6839_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW Kind of channel: enhancement Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.3A Gate charge: 1.1nC Power dissipation: 0.5W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT23-6 кількість в упаковці: 1 шт |
на замовлення 2949 шт: термін постачання 14-21 дні (днів) |
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PJS6839_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW Kind of channel: enhancement Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.3A Gate charge: 1.1nC Power dissipation: 0.5W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT23-6 |
на замовлення 2949 шт: термін постачання 21-30 дні (днів) |
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| PJSD03TS-AU_R1_000A1 | PanJit Semiconductor |
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes |
на замовлення 4700 шт: термін постачання 14-21 дні (днів) |
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PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF Type of diode: TVS Peak pulse power dissipation: 120W Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Version: ESD Capacitance: 110pF Application: automotive industry |
на замовлення 4777 шт: термін постачання 21-30 дні (днів) |
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PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF Type of diode: TVS Peak pulse power dissipation: 120W Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Version: ESD Capacitance: 110pF Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 4777 шт: термін постачання 14-21 дні (днів) |
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PJSD12CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape; ESD Type of diode: TVS array Peak pulse power dissipation: 0.35kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 15A Case: SOD323 Mounting: SMD Leakage current: 1µA Application: automotive industry Capacitance: 0.1nF Version: ESD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 120W Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJSD36W_R1_00001 | PanJit Semiconductor | PJSD36W-R1 Unidirectional TVS SMD diodes |
на замовлення 4635 шт: термін постачання 14-21 дні (днів) |
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| PJT138K-AU_R1_000A1 | PanJit Semiconductor | PJT138K-AU-R1 Multi channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V Case: SOT363 кількість в упаковці: 1 шт |
на замовлення 2695 шт: термін постачання 14-21 дні (днів) |
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 1.6/2.2nC Power dissipation: 0.35W On-state resistance: 400/600mΩ Drain current: 1A/-700mA Gate-source voltage: ±8V Drain-source voltage: 20/-20V Case: SOT363 |
на замовлення 2695 шт: термін постачання 21-30 дні (днів) |
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| PJT7603_R1_00001 | PanJit Semiconductor |
PJT7603-R1 Multi channel transistors |
на замовлення 2880 шт: термін постачання 14-21 дні (днів) |
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PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.35W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.4Ω Gate charge: 1.6nC Drain current: 1A Pulsed drain current: 4A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5978 шт: термін постачання 14-21 дні (днів) |
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PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.35W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.4Ω Gate charge: 1.6nC Drain current: 1A Pulsed drain current: 4A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 5978 шт: термін постачання 21-30 дні (днів) |
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| PJT7801_R1_00001 | PanJit Semiconductor |
PJT7801-R1 Multi channel transistors |
на замовлення 2845 шт: термін постачання 14-21 дні (днів) |
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PJT7828_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW Kind of package: reel; tape Type of transistor: N-MOSFET x2 Case: SOT363 Mounting: SMD Gate charge: 0.9nC Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A On-state resistance: 4Ω Gate-source voltage: ±10V Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJT7838_R1_00001 | PanJit Semiconductor |
PJT7838-R1 Multi channel transistors |
на замовлення 7648 шт: термін постачання 14-21 дні (днів) |
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJW4P06A-AU_R2_000A1 | PanJit Semiconductor |
PJW4P06A-AU-R2 SMD P channel transistors |
на замовлення 3190 шт: термін постачання 14-21 дні (днів) |
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| PJW4P06A_R2_00001 | PanJit Semiconductor |
PJW4P06A-R2 SMD P channel transistors |
на замовлення 865 шт: термін постачання 14-21 дні (днів) |
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| PJX138K_R1_00001 | PanJit Semiconductor | PJX138K-R1 Multi channel transistors |
на замовлення 3935 шт: термін постачання 14-21 дні (днів) |
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| PJX8603_R1_00001 | PanJit Semiconductor |
PJX8603-R1 Multi channel transistors |
на замовлення 1927 шт: термін постачання 14-21 дні (днів) |
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| PSMB050N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB050N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 14-21 дні (днів) |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZ1AL3V6B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode; 100uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZS1112BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZS516V2BAS_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PZS516V2BAS_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Kind of package: reel; tape Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| RB500V-40_R1_00001 | PanJit Semiconductor |
RB500V-40-R1 SMD Schottky diodes |
на замовлення 6770 шт: термін постачання 14-21 дні (днів) |
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| RB501V-40_R1_00001 | PanJit Semiconductor |
RB501V-40-R1 SMD Schottky diodes |
на замовлення 5250 шт: термін постачання 14-21 дні (днів) |
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RB520S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.6V Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4976 шт: термін постачання 14-21 дні (днів) |
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RB520S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.6V Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 4976 шт: термін постачання 21-30 дні (днів) |
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RB520S40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 10ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.6V Leakage current: 0.6mA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB521S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA кількість в упаковці: 1 шт |
на замовлення 6478 шт: термін постачання 14-21 дні (днів) |
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RB521S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Leakage current: 0.1mA |
на замовлення 6478 шт: термін постачання 21-30 дні (днів) |
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RB751S40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry Leakage current: 10µA Max. forward voltage: 0.37V |
на замовлення 2785 шт: термін постачання 21-30 дні (днів) |
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RB751S40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry Leakage current: 10µA Max. forward voltage: 0.37V кількість в упаковці: 1 шт |
на замовлення 2785 шт: термін постачання 14-21 дні (днів) |
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A |
на замовлення 4899 шт: термін постачання 21-30 дні (днів) |
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RB751V-40X_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape |
на замовлення 4279 шт: термін постачання 21-30 дні (днів) |
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RB751V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 3247 шт: термін постачання 21-30 дні (днів) |
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 0.6A кількість в упаковці: 1 шт |
на замовлення 4899 шт: термін постачання 14-21 дні (днів) |
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RB751V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W кількість в упаковці: 1 шт |
на замовлення 3247 шт: термін постачання 14-21 дні (днів) |
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| PJQ4435EP_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4439EP_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -90A; 10W
Kind of package: reel
Mounting: SMD
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -90A
Drain current: -30A
Drain-source voltage: -30V
Gate charge: 22nC
On-state resistance: 19.1mΩ
Power dissipation: 10W
Gate-source voltage: ±25V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 152A; 10.7W
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 9.3mΩ
Power dissipation: 10.7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 152A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4534P_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 144A; 7W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
On-state resistance: 8.9mΩ
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 144A
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.08 грн |
| 10+ | 74.94 грн |
| 29+ | 32.93 грн |
| 79+ | 31.18 грн |
| PJQ5544-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.90 грн |
| 10+ | 93.38 грн |
| 29+ | 39.52 грн |
| 79+ | 37.42 грн |
| PJS6421_S1_00001 |
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Виробник: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
PJS6421-S1 SMD P channel transistors
на замовлення 2941 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.49 грн |
| 117+ | 9.64 грн |
| 320+ | 9.16 грн |
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2648 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.92 грн |
| 13+ | 22.90 грн |
| 100+ | 16.80 грн |
| 131+ | 8.59 грн |
| 360+ | 8.11 грн |
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2648 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 22+ | 18.38 грн |
| 100+ | 14.00 грн |
| 131+ | 7.16 грн |
| 360+ | 6.76 грн |
| PJS6839_S1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
кількість в упаковці: 1 шт
на замовлення 2949 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.78 грн |
| 16+ | 19.03 грн |
| 100+ | 11.20 грн |
| 213+ | 5.29 грн |
| 584+ | 4.99 грн |
| 30000+ | 4.96 грн |
| PJS6839_S1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
на замовлення 2949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.99 грн |
| 27+ | 15.27 грн |
| 100+ | 9.33 грн |
| 213+ | 4.41 грн |
| 584+ | 4.16 грн |
| PJSD03TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
PJSD03TS-AU-R1 Unidirectional TVS SMD diodes
на замовлення 4700 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 14.80 грн |
| 217+ | 5.19 грн |
| 597+ | 4.91 грн |
| PJSD05TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
на замовлення 4777 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.56 грн |
| 42+ | 9.55 грн |
| 100+ | 7.16 грн |
| 178+ | 5.25 грн |
| 489+ | 4.93 грн |
| PJSD05TS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Version: ESD
Capacitance: 110pF
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 4777 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.48 грн |
| 25+ | 11.90 грн |
| 100+ | 8.59 грн |
| 178+ | 6.30 грн |
| 489+ | 5.92 грн |
| 5000+ | 5.73 грн |
| PJSD12CW-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.1nF
Version: ESD
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape; ESD
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.1nF
Version: ESD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PJSD24TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
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В кошику
од. на суму грн.
| PJSD36W_R1_00001 |
Виробник: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
PJSD36W-R1 Unidirectional TVS SMD diodes
на замовлення 4635 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.33 грн |
| 189+ | 6.01 грн |
| 518+ | 5.63 грн |
| PJT138K-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
PJT138K-AU-R1 Multi channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.42 грн |
| 204+ | 5.55 грн |
| 559+ | 5.24 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
кількість в упаковці: 1 шт
на замовлення 2695 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.32 грн |
| 11+ | 29.64 грн |
| 100+ | 18.23 грн |
| 169+ | 6.68 грн |
| 463+ | 6.30 грн |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Case: SOT363
на замовлення 2695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.26 грн |
| 17+ | 23.79 грн |
| 100+ | 15.19 грн |
| 169+ | 5.57 грн |
| 463+ | 5.25 грн |
| PJT7603_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
PJT7603-R1 Multi channel transistors
на замовлення 2880 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.91 грн |
| 204+ | 5.55 грн |
| 559+ | 5.24 грн |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5978 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.78 грн |
| 17+ | 18.34 грн |
| 100+ | 9.26 грн |
| 500+ | 8.02 грн |
| 1000+ | 7.45 грн |
| 3000+ | 6.01 грн |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.4Ω
Gate charge: 1.6nC
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 5978 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.99 грн |
| 28+ | 14.72 грн |
| 100+ | 7.72 грн |
| 500+ | 6.68 грн |
| 1000+ | 6.20 грн |
| 3000+ | 5.01 грн |
| PJT7801_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
PJT7801-R1 Multi channel transistors
на замовлення 2845 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.35 грн |
| 169+ | 6.68 грн |
| 463+ | 6.30 грн |
| PJT7828_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Gate charge: 0.9nC
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
On-state resistance: 4Ω
Gate-source voltage: ±10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; Idm: 0.6A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Gate charge: 0.9nC
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
On-state resistance: 4Ω
Gate-source voltage: ±10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJT7838_R1_00001 |
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Виробник: PanJit Semiconductor
PJT7838-R1 Multi channel transistors
PJT7838-R1 Multi channel transistors
на замовлення 7648 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.49 грн |
| 145+ | 7.83 грн |
| 398+ | 7.35 грн |
| PJW4N06A-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PJW4N06A_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PJW4P06A-AU_R2_000A1 |
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Виробник: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
PJW4P06A-AU-R2 SMD P channel transistors
на замовлення 3190 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.43 грн |
| 68+ | 16.61 грн |
| 186+ | 15.75 грн |
| PJW4P06A_R2_00001 |
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Виробник: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
PJW4P06A-R2 SMD P channel transistors
на замовлення 865 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.87 грн |
| 89+ | 12.70 грн |
| 245+ | 11.93 грн |
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
PJX138K-R1 Multi channel transistors
PJX138K-R1 Multi channel transistors
на замовлення 3935 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.45 грн |
| 193+ | 5.84 грн |
| 531+ | 5.52 грн |
| 8000+ | 5.51 грн |
| PJX8603_R1_00001 |
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Виробник: PanJit Semiconductor
PJX8603-R1 Multi channel transistors
PJX8603-R1 Multi channel transistors
на замовлення 1927 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.78 грн |
| 170+ | 6.68 грн |
| 466+ | 6.30 грн |
| PSMB050N10NS2_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMB050N10NS2_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMB055N08NS1_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMB055N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMN015N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMN028N10NS2_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PSMP050N10NS2_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.54 грн |
| 10+ | 94.17 грн |
| 18+ | 65.87 грн |
| 47+ | 62.05 грн |
| 5000+ | 59.18 грн |
| PSMP055N08NS1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.78 грн |
| 10+ | 75.57 грн |
| 18+ | 54.89 грн |
| 47+ | 51.71 грн |
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PZ1AL3V6B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.1mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.1mA
товару немає в наявності
В кошику
од. на суму грн.
| PZS1112BES_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
товару немає в наявності
В кошику
од. на суму грн.
| PZS516V2BAS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.31 грн |
| 100+ | 7.15 грн |
| 284+ | 3.95 грн |
| 781+ | 3.73 грн |
| 3000+ | 3.59 грн |
| PZS516V2BAS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.42 грн |
| 100+ | 5.74 грн |
| 284+ | 3.29 грн |
| 781+ | 3.11 грн |
| 3000+ | 2.99 грн |
| RB500V-40_R1_00001 |
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Виробник: PanJit Semiconductor
RB500V-40-R1 SMD Schottky diodes
RB500V-40-R1 SMD Schottky diodes
на замовлення 6770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 9.07 грн |
| 637+ | 1.77 грн |
| 1753+ | 1.67 грн |
| RB501V-40_R1_00001 |
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Виробник: PanJit Semiconductor
RB501V-40-R1 SMD Schottky diodes
RB501V-40-R1 SMD Schottky diodes
на замовлення 5250 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.72 грн |
| 624+ | 1.80 грн |
| 1716+ | 1.71 грн |
| RB520S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4976 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.22 грн |
| 53+ | 5.65 грн |
| 100+ | 4.08 грн |
| 500+ | 3.17 грн |
| 1000+ | 2.80 грн |
| 2000+ | 2.43 грн |
| 5000+ | 2.27 грн |
| RB520S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.6V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 4976 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.85 грн |
| 88+ | 4.53 грн |
| 118+ | 3.40 грн |
| 500+ | 2.64 грн |
| 1000+ | 2.33 грн |
| 2000+ | 2.03 грн |
| RB520S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 10ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.6V
Leakage current: 0.6mA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RB521S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
кількість в упаковці: 1 шт
на замовлення 6478 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 8.79 грн |
| 53+ | 5.65 грн |
| 100+ | 3.68 грн |
| 499+ | 2.26 грн |
| 1370+ | 2.14 грн |
| 2000+ | 2.11 грн |
| 5000+ | 2.05 грн |
| RB521S30_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Leakage current: 0.1mA
на замовлення 6478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.32 грн |
| 88+ | 4.53 грн |
| 130+ | 3.07 грн |
| 499+ | 1.89 грн |
| 1370+ | 1.78 грн |
| 2000+ | 1.76 грн |
| 5000+ | 1.71 грн |
| RB751S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.42 грн |
| 63+ | 6.36 грн |
| 100+ | 4.10 грн |
| 390+ | 2.40 грн |
| 500+ | 2.39 грн |
| 1072+ | 2.27 грн |
| RB751S40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 10µA
Max. forward voltage: 0.37V
кількість в упаковці: 1 шт
на замовлення 2785 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.31 грн |
| 38+ | 7.93 грн |
| 100+ | 4.93 грн |
| 390+ | 2.88 грн |
| 500+ | 2.87 грн |
| 1072+ | 2.72 грн |
| 5000+ | 2.70 грн |
| RB751V-40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
на замовлення 4899 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.71 грн |
| 51+ | 7.88 грн |
| 100+ | 4.92 грн |
| 388+ | 2.42 грн |
| 1067+ | 2.29 грн |
| RB751V-40X_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
на замовлення 4279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 62+ | 6.44 грн |
| 103+ | 3.87 грн |
| 452+ | 2.08 грн |
| 1241+ | 1.96 грн |
| 2500+ | 1.89 грн |
| RB751V-40_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 3247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.42 грн |
| 80+ | 5.01 грн |
| 124+ | 3.22 грн |
| 462+ | 2.04 грн |
| 1269+ | 1.93 грн |
| 2000+ | 1.89 грн |
| RB751V-40-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 0.6A
кількість в упаковці: 1 шт
на замовлення 4899 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.45 грн |
| 31+ | 9.81 грн |
| 100+ | 5.90 грн |
| 388+ | 2.90 грн |
| 1067+ | 2.75 грн |
| 5000+ | 2.69 грн |
| RB751V-40_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.3A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
кількість в упаковці: 1 шт
на замовлення 3247 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 11.31 грн |
| 48+ | 6.25 грн |
| 100+ | 3.87 грн |
| 462+ | 2.44 грн |
| 1269+ | 2.31 грн |
| 2000+ | 2.27 грн |
| 5000+ | 2.22 грн |









