Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1215) > Сторінка 12 з 21
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PCDE0865G1_R2_00001 | PanJit Semiconductor | PCDE0865G1-R2 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDE10120G1_R2_00001 | PanJit Semiconductor | PCDE10120G1-R2 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDE1065G1_R2_00001 | PanJit Semiconductor | PCDE1065G1-R2 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDE20120G1_R2_00001 | PanJit Semiconductor | PCDE20120G1-R2 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0465G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0465G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0665G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 24A Max. forward voltage: 1.8V Max. forward impulse current: 0.32kA Leakage current: 50µA Power dissipation: 70.8W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0665G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 24A Max. forward voltage: 1.8V Max. forward impulse current: 0.32kA Leakage current: 50µA Power dissipation: 70.8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0865G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 28A Max. forward voltage: 1.8V Max. forward impulse current: 0.48kA Leakage current: 60µA Power dissipation: 78.1W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF0865G1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. load current: 28A Max. forward voltage: 1.8V Max. forward impulse current: 0.48kA Leakage current: 60µA Power dissipation: 78.1W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDF1065G1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 52A Max. forward impulse current: 720A Leakage current: 0.1mA Kind of package: tube Power dissipation: 167.8W Max. forward voltage: 2V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 52A Max. forward impulse current: 720A Leakage current: 0.1mA Kind of package: tube Power dissipation: 167.8W Max. forward voltage: 2V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PCDH20120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 72A Max. forward impulse current: 0.92kA Leakage current: 0.1mA Kind of package: tube Power dissipation: 209W Max. forward voltage: 1.9V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH20120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 72A Max. forward impulse current: 0.92kA Leakage current: 0.1mA Kind of package: tube Power dissipation: 209W Max. forward voltage: 1.9V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Mounting: THT Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Mounting: THT Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Mounting: THT Max. off-state voltage: 650V Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Mounting: THT Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Mounting: THT Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH30120CCG1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH30120CCGB_T0_00601 | PanJit Semiconductor | PCDH30120CCGB-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH3065CCG1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH3065CCGB_T0_00601 | PanJit Semiconductor | PCDH3065CCGB-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH3065CCGC_T0_00601 | PanJit Semiconductor | PCDH3065CCGC-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH40120CCG1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH40120CCGB_T0_00601 | PanJit Semiconductor | PCDH40120CCGB-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH4065CCG1_T0_00601 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH4065CCGB_T0_00601 | PanJit Semiconductor | PCDH4065CCGB-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDH4065CCGC_T0_00601 | PanJit Semiconductor | PCDH4065CCGC-T0 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP0465G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP05120G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP0665G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP08120G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP0865G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP10120G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP1065G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP1265G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PCDP1665G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP20120G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PCDP2065G1_T0_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 4990 шт: термін постачання 14-21 дні (днів) |
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PE1403M1Q_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Mounting: SMD Case: SOT23-6 Capacitance: 0.8pF кількість в упаковці: 1 шт |
на замовлення 8550 шт: термін постачання 14-21 дні (днів) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Mounting: SMD Case: SOT23-6 Capacitance: 0.8pF |
на замовлення 8550 шт: термін постачання 21-30 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Mounting: SMD Case: SOT363 Capacitance: 0.8pF кількість в упаковці: 1 шт |
на замовлення 2980 шт: термін постачання 14-21 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Mounting: SMD Case: SOT363 Capacitance: 0.8pF |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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PE4105C1ES_R1_00001 | PanJit Semiconductor | PE4105C1ES-R1 Protection diodes - arrays |
на замовлення 4200 шт: термін постачання 14-21 дні (днів) |
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PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Mounting: SMD Case: DFN1006-2 Capacitance: 0.6pF Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Kind of package: reel; tape Type of diode: TVS Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Mounting: SMD Case: DFN1006-2 Capacitance: 0.6pF Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Kind of package: reel; tape Type of diode: TVS Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PEC3202M1Q_R1_00201 | PanJit Semiconductor | PEC3202M1Q-R1 Bidirectional TVS SMD diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PEC3205M1Q_R1_00201 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Mounting: SMD Capacitance: 35pF Kind of package: reel; tape Type of diode: TVS array Version: ESD Case: SOT23 Max. off-state voltage: 7...12V Semiconductor structure: asymmetric; bidirectional Max. forward impulse current: 8A Breakdown voltage: 7.5...13.3V Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 1455 шт: термін постачання 14-21 дні (днів) |
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PCDE0865G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDE0865G1-R2 SMD Schottky diodes
PCDE0865G1-R2 SMD Schottky diodes
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PCDE10120G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDE10120G1-R2 SMD Schottky diodes
PCDE10120G1-R2 SMD Schottky diodes
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PCDE1065G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDE1065G1-R2 SMD Schottky diodes
PCDE1065G1-R2 SMD Schottky diodes
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PCDE20120G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDE20120G1-R2 SMD Schottky diodes
PCDE20120G1-R2 SMD Schottky diodes
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PCDF0465G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
кількість в упаковці: 1 шт
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PCDF0465G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
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PCDF0665G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 24A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Power dissipation: 70.8W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 24A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Power dissipation: 70.8W
кількість в упаковці: 1 шт
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PCDF0665G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 24A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 24A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.32kA
Leakage current: 50µA
Power dissipation: 70.8W
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PCDF0865G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 28A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.48kA
Leakage current: 60µA
Power dissipation: 78.1W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 28A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.48kA
Leakage current: 60µA
Power dissipation: 78.1W
кількість в упаковці: 1 шт
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PCDF0865G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 28A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.48kA
Leakage current: 60µA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. load current: 28A
Max. forward voltage: 1.8V
Max. forward impulse current: 0.48kA
Leakage current: 60µA
Power dissipation: 78.1W
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PCDF1065G1_T0_00601 |
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Виробник: PanJit Semiconductor
PCDF1065G1-T0 THT Schottky diodes
PCDF1065G1-T0 THT Schottky diodes
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PCDH20120CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 167.8W
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 167.8W
Max. forward voltage: 2V
кількість в упаковці: 1 шт
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PCDH20120CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 167.8W
Max. forward voltage: 2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 167.8W
Max. forward voltage: 2V
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PCDH20120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 209W
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 209W
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
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PCDH20120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 209W
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Power dissipation: 209W
Max. forward voltage: 1.9V
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PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 440.63 грн |
4+ | 325.81 грн |
10+ | 296.32 грн |
150+ | 292.65 грн |
600+ | 285.31 грн |
PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 367.19 грн |
4+ | 261.46 грн |
10+ | 246.93 грн |
PCDH2065CCGB_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
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PCDH2065CCGB_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
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PCDH2065CCGC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
кількість в упаковці: 1 шт
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PCDH2065CCGC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
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PCDH30120CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
PCDH30120CCG1-T0 THT Schottky diodes
PCDH30120CCG1-T0 THT Schottky diodes
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PCDH30120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
PCDH30120CCGB-T0 THT Schottky diodes
PCDH30120CCGB-T0 THT Schottky diodes
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PCDH3065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
PCDH3065CCG1-T0 THT Schottky diodes
PCDH3065CCG1-T0 THT Schottky diodes
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PCDH3065CCGB_T0_00601 |
Виробник: PanJit Semiconductor
PCDH3065CCGB-T0 THT Schottky diodes
PCDH3065CCGB-T0 THT Schottky diodes
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PCDH3065CCGC_T0_00601 |
Виробник: PanJit Semiconductor
PCDH3065CCGC-T0 THT Schottky diodes
PCDH3065CCGC-T0 THT Schottky diodes
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PCDH40120CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
PCDH40120CCG1-T0 THT Schottky diodes
PCDH40120CCG1-T0 THT Schottky diodes
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PCDH40120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
PCDH40120CCGB-T0 THT Schottky diodes
PCDH40120CCGB-T0 THT Schottky diodes
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PCDH4065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
PCDH4065CCG1-T0 THT Schottky diodes
PCDH4065CCG1-T0 THT Schottky diodes
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PCDH4065CCGB_T0_00601 |
Виробник: PanJit Semiconductor
PCDH4065CCGB-T0 THT Schottky diodes
PCDH4065CCGB-T0 THT Schottky diodes
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PCDH4065CCGC_T0_00601 |
Виробник: PanJit Semiconductor
PCDH4065CCGC-T0 THT Schottky diodes
PCDH4065CCGC-T0 THT Schottky diodes
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PCDP0465G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP0465G1-T0 THT Schottky diodes
PCDP0465G1-T0 THT Schottky diodes
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PCDP05120G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP05120G1-T0 THT Schottky diodes
PCDP05120G1-T0 THT Schottky diodes
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PCDP0665G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP0665G1-T0 THT Schottky diodes
PCDP0665G1-T0 THT Schottky diodes
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PCDP08120G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP08120G1-T0 THT Schottky diodes
PCDP08120G1-T0 THT Schottky diodes
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PCDP0865G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP0865G1-T0 THT Schottky diodes
PCDP0865G1-T0 THT Schottky diodes
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PCDP10120G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP10120G1-T0 THT Schottky diodes
PCDP10120G1-T0 THT Schottky diodes
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PCDP1065G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP1065G1-T0 THT Schottky diodes
PCDP1065G1-T0 THT Schottky diodes
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PCDP1265G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP1265G1-T0 THT Schottky diodes
PCDP1265G1-T0 THT Schottky diodes
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PCDP15120G1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
кількість в упаковці: 1 шт
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PCDP15120G1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
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PCDP1665G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP1665G1-T0 THT Schottky diodes
PCDP1665G1-T0 THT Schottky diodes
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PCDP20120G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP20120G1-T0 THT Schottky diodes
PCDP20120G1-T0 THT Schottky diodes
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PCDP2065G1_T0_00001 |
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Виробник: PanJit Semiconductor
PCDP2065G1-T0 THT Schottky diodes
PCDP2065G1-T0 THT Schottky diodes
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PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
57+ | 6.80 грн |
124+ | 3.09 грн |
390+ | 2.29 грн |
1072+ | 2.17 грн |
PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 4990 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
25+ | 11.86 грн |
34+ | 8.48 грн |
100+ | 3.71 грн |
390+ | 2.75 грн |
1072+ | 2.61 грн |
10000+ | 2.60 грн |
15000+ | 2.57 грн |
PE1403M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
PE1403M1Q-R1 Protection diodes - arrays
PE1403M1Q-R1 Protection diodes - arrays
товару немає в наявності
В кошику
од. на суму грн.
PE1805C4A6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT23-6
Capacitance: 0.8pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT23-6
Capacitance: 0.8pF
кількість в упаковці: 1 шт
на замовлення 8550 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 15.81 грн |
27+ | 10.86 грн |
100+ | 7.15 грн |
195+ | 5.56 грн |
500+ | 5.42 грн |
534+ | 5.26 грн |
1000+ | 5.05 грн |
PE1805C4A6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT23-6
Capacitance: 0.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT23-6
Capacitance: 0.8pF
на замовлення 8550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
44+ | 8.72 грн |
100+ | 5.96 грн |
195+ | 4.63 грн |
500+ | 4.52 грн |
534+ | 4.38 грн |
1000+ | 4.21 грн |
PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT363
Capacitance: 0.8pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT363
Capacitance: 0.8pF
кількість в упаковці: 1 шт
на замовлення 2980 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 15.81 грн |
31+ | 9.24 грн |
100+ | 6.24 грн |
232+ | 4.65 грн |
638+ | 4.39 грн |
3000+ | 4.28 грн |
6000+ | 4.24 грн |
PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT363
Capacitance: 0.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape; ESD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Mounting: SMD
Case: SOT363
Capacitance: 0.8pF
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
52+ | 7.42 грн |
100+ | 5.20 грн |
232+ | 3.88 грн |
638+ | 3.66 грн |
PE4105C1ES_R1_00001 |
Виробник: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
PE4105C1ES-R1 Protection diodes - arrays
на замовлення 4200 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
72+ | 4.12 грн |
674+ | 1.60 грн |
1852+ | 1.50 грн |
PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
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В кошику
од. на суму грн.
PEC1605M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.6pF
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.6pF
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PEC1605M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.6pF
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.6pF
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
PEC3202M1Q_R1_00201 |
Виробник: PanJit Semiconductor
PEC3202M1Q-R1 Bidirectional TVS SMD diodes
PEC3202M1Q-R1 Bidirectional TVS SMD diodes
товару немає в наявності
В кошику
од. на суму грн.
PEC3205M1Q_R1_00201 |
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Виробник: PanJit Semiconductor
PEC3205M1Q-R1 Bidirectional TVS SMD diodes
PEC3205M1Q-R1 Bidirectional TVS SMD diodes
товару немає в наявності
В кошику
од. на суму грн.
PEC3324C2A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PEC3324C2A-AU-R1 Protection diodes - arrays
PEC3324C2A-AU-R1 Protection diodes - arrays
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 27.66 грн |
133+ | 8.07 грн |
364+ | 7.71 грн |
PEC33712C2A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Mounting: SMD
Capacitance: 35pF
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Case: SOT23
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Mounting: SMD
Capacitance: 35pF
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Case: SOT23
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 1455 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 13.83 грн |
33+ | 8.76 грн |
100+ | 7.61 грн |
170+ | 6.33 грн |
466+ | 5.96 грн |
1000+ | 5.69 грн |