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P6SMBJ170A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ170CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ18A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ20CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ20CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ220A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ22A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ22CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ24A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ24A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ26A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ26CA-AU_R2_000A1 P6SMBJ26CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ28A-R1 Unidirectional TVS SMD diodes
на замовлення 785 шт:
термін постачання 7-14 дні (днів)
13+26.63 грн
167+7.05 грн
458+6.65 грн
Мінімальне замовлення: 13
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P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 1600 шт:
термін постачання 7-14 дні (днів)
16+20.11 грн
107+11.02 грн
295+10.43 грн
9600+10.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ30A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
15+21.39 грн
23+13.72 грн
100+9.34 грн
500+7.45 грн
800+7.05 грн
1600+6.46 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
25+17.83 грн
38+11.01 грн
100+7.78 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P6SMBJ33A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 850 шт:
термін постачання 7-14 дні (днів)
12+27.81 грн
17+18.36 грн
100+12.41 грн
500+9.53 грн
800+8.74 грн
1600+7.75 грн
2400+7.25 грн
Мінімальне замовлення: 12
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P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
20+23.17 грн
29+14.73 грн
100+10.35 грн
500+7.95 грн
800+7.28 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
16+28.52 грн
25+16.72 грн
100+11.67 грн
500+9.43 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 968 шт:
термін постачання 7-14 дні (днів)
10+34.23 грн
15+20.83 грн
100+14.00 грн
500+11.32 грн
Мінімальне замовлення: 10
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P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ36CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
10+32.09 грн
17+18.98 грн
100+12.12 грн
500+9.14 грн
800+8.34 грн
1600+7.75 грн
Мінімальне замовлення: 10
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P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
17+26.74 грн
28+15.23 грн
100+10.10 грн
Мінімальне замовлення: 17
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P6SMBJ40CA_R2_00001 PanJit Semiconductor P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
на замовлення 5987 шт:
термін постачання 7-14 дні (днів)
11+31.12 грн
141+8.34 грн
389+7.85 грн
Мінімальне замовлення: 11
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P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 865 шт:
термін постачання 7-14 дні (днів)
12+27.81 грн
18+18.15 грн
100+12.02 грн
500+9.24 грн
800+8.54 грн
1600+7.65 грн
2400+7.05 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
20+23.17 грн
29+14.57 грн
100+10.01 грн
500+7.70 грн
800+7.12 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ5.0CA-R1 Bidirectional TVS SMD diodes
на замовлення 595 шт:
термін постачання 7-14 дні (днів)
8+45.67 грн
135+8.74 грн
370+8.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
P6SMBJ58CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)
12+26.74 грн
18+17.22 грн
100+11.62 грн
500+8.94 грн
800+8.24 грн
1600+7.35 грн
2400+6.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
20+22.28 грн
30+13.82 грн
100+9.68 грн
500+7.45 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ6.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ7.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 7-14 дні (днів)
11+29.95 грн
16+19.60 грн
100+12.81 грн
500+9.73 грн
800+8.84 грн
1600+8.04 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
P6SMBJ7.5CA_R1_00001 P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
18+24.96 грн
27+15.72 грн
100+10.68 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PBHV8050SA_R1_00501 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf PBHV8110DA-AU-R1 NPN SMD transistors
на замовлення 43 шт:
термін постачання 7-14 дні (днів)
13+25.03 грн
212+5.56 грн
582+5.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDH2065CCG1_T0_00601 PanJit Semiconductor PCDH2065CCG1.pdf PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+502.68 грн
4+343.63 грн
10+324.76 грн
600+323.84 грн
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PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ5.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ9.1B-AU_R1_000A1 PDZ9.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
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PDZ9.1B_R1_00001 PDZ9.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf PE1805C4A6-R1 Protection diodes - arrays
на замовлення 8435 шт:
термін постачання 7-14 дні (днів)
18+18.29 грн
195+6.06 грн
534+5.73 грн
3000+5.72 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf PE1805C4C6-R1 Protection diodes - arrays
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)
18+17.97 грн
232+5.07 грн
638+4.80 грн
15000+4.79 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
на замовлення 3900 шт:
термін постачання 7-14 дні (днів)
60+5.35 грн
86+3.61 грн
122+2.44 грн
500+2.09 грн
1000+1.99 грн
5000+1.84 грн
10000+1.81 грн
Мінімальне замовлення: 60
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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
100+4.46 грн
143+2.90 грн
204+2.04 грн
500+1.74 грн
1000+1.66 грн
Мінімальне замовлення: 100
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PE4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PanJit Semiconductor PE4105C3C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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P6SMBJ170A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ170CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ18A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ20CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ20CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ220A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ22A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ22CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ24A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ24A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ26A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ26CA-AU_R2_000A1
P6SMBJ26CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ28A-R1 Unidirectional TVS SMD diodes
на замовлення 785 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+26.63 грн
167+7.05 грн
458+6.65 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 1600 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
16+20.11 грн
107+11.02 грн
295+10.43 грн
9600+10.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ30A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
15+21.39 грн
23+13.72 грн
100+9.34 грн
500+7.45 грн
800+7.05 грн
1600+6.46 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.83 грн
38+11.01 грн
100+7.78 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P6SMBJ33A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 850 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+27.81 грн
17+18.36 грн
100+12.41 грн
500+9.53 грн
800+8.74 грн
1600+7.75 грн
2400+7.25 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.17 грн
29+14.73 грн
100+10.35 грн
500+7.95 грн
800+7.28 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.52 грн
25+16.72 грн
100+11.67 грн
500+9.43 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 968 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+34.23 грн
15+20.83 грн
100+14.00 грн
500+11.32 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ36CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+32.09 грн
17+18.98 грн
100+12.12 грн
500+9.14 грн
800+8.34 грн
1600+7.75 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.74 грн
28+15.23 грн
100+10.10 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
P6SMBJ40CA_R2_00001
Виробник: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
на замовлення 5987 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
11+31.12 грн
141+8.34 грн
389+7.85 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 865 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+27.81 грн
18+18.15 грн
100+12.02 грн
500+9.24 грн
800+8.54 грн
1600+7.65 грн
2400+7.05 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 0.8mA
Max. forward impulse current: 65.2A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
Breakdown voltage: 6.4...7.07V
Manufacturer series: P6SMBJ
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.17 грн
29+14.57 грн
100+10.01 грн
500+7.70 грн
800+7.12 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ5.0CA-R1 Bidirectional TVS SMD diodes
на замовлення 595 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
8+45.67 грн
135+8.74 грн
370+8.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
P6SMBJ58CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+26.74 грн
18+17.22 грн
100+11.62 грн
500+8.94 грн
800+8.24 грн
1600+7.35 грн
2400+6.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.28 грн
30+13.82 грн
100+9.68 грн
500+7.45 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ6.5CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
11+29.95 грн
16+19.60 грн
100+12.81 грн
500+9.73 грн
800+8.84 грн
1600+8.04 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.5CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMBJ
Leakage current: 0.2mA
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Peak pulse power dissipation: 0.6kW
Features of semiconductor devices: glass passivated
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.96 грн
27+15.72 грн
100+10.68 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PBHV8050SA_R1_00501
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
Виробник: PanJit Semiconductor
PBHV8110DA-AU-R1 NPN SMD transistors
на замовлення 43 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+25.03 грн
212+5.56 грн
582+5.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PCDB1065G1.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PCDF0465G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
Виробник: PanJit Semiconductor
PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
1+502.68 грн
4+343.63 грн
10+324.76 грн
600+323.84 грн
В кошику  од. на суму  грн.
PDZ5.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ5.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ4.7B_SER.pdf
PDZ5.1B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ9.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ9.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
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PDZ9.1B_R1_00001 PDZ4.7B_SER.pdf
PDZ9.1B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
Виробник: PanJit Semiconductor
PE1805C4A6-R1 Protection diodes - arrays
на замовлення 8435 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
18+18.29 грн
195+6.06 грн
534+5.73 грн
3000+5.72 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PE1805C4C6.pdf
Виробник: PanJit Semiconductor
PE1805C4C6-R1 Protection diodes - arrays
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
18+17.97 грн
232+5.07 грн
638+4.80 грн
15000+4.79 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
на замовлення 3900 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
60+5.35 грн
86+3.61 грн
122+2.44 грн
500+2.09 грн
1000+1.99 грн
5000+1.84 грн
10000+1.81 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.46 грн
143+2.90 грн
204+2.04 грн
500+1.74 грн
1000+1.66 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
PE4105C2A_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PE4105C3C6.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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