Виробник: Vishay Semiconductors
Infrared Receivers IR Receiver 38kHz NEC/Sharp AGC4

Виробник: VISHAY
Description: VISHAY - TSOP6438TR - Infrarot-Empfänger, Fernsteuerung, 38 kHz, Oberflächenmontage, Top- oder Side-View, NEC, Sharp, 40m
tariffCode: 85176990
Schwellenwert / Empfindlichkeit für Erfassung: 0.2mW/m²
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Fernbediencode: NEC, Sharp
usEccn: EAR99
Betriebstemperatur, min.: -25°C
Versorgungsspannung, min.: 2.5V
Trägerfrequenz: 38kHz
IR-Empfängermontage: Oberflächenmontage, Top- oder Side-View
euEccn: NLR
Versorgungsstrom: 700µA
Automatische Verstärkungsregelung (AVR): AGC4
Produktpalette: Multicomp Pro RJ45 Adapter
Richtcharakteristik: 50°
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
Übertragungsreichweite: 40m
SVHC: To Be Advised

Виробник: Vishay
(polish version) SENSOR REMOTE REC 38.0KHZ 40M OOTSOP6438tr
кількість в упаковці: 10 шт

Виробник: Vishay
(polish version) SENSOR REMOTE REC 38.0KHZ 40M OOTSOP6438tr
кількість в упаковці: 10 шт

Виробник: Vishay
IR Remote Receiver 38kHz 100° 18m 4-Pin SMD T/R

Виробник: Vishay Semiconductors
Infrared Receivers IR Receiver 38kHz NEC/Sharp AGC4

Виробник: Vishay
IR Remote Receiver 38kHz 100° 18m 4-Pin SMD T/R

Виробник: Vishay Semiconductors
Infrared Receivers Panhead 56kHz AGC4

Виробник: VISHAY

Виробник: VISHAY
SMD 07+

Виробник: VISHAY

Виробник: VISHAY?
04+

Виробник: samsung
09+

Виробник: VISHAY

Мікросхеми > Логіка
Корпус: TSOP-6
Опис: Single 3-input AND gate
Монтаж: SMD
Живлення,V: 1,65...5,5 V
T°C: -40…+125°C
Тип логіч. елем.: AND

Виробник: IR
Транзистори > Польові P-канальні
Корпус: TSOP-6
Uds,V: 30 V
Id,A: 4 А
Rds(on),Om: 0,85 Ohm
Ciss, pF/Qg, nC: 535/11.4
Монтаж: SMD

Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 20 V
Idd,A: 2,7 A
Rds(on), Ohm: 0,09 Ohm
Ciss, pF/Qg, nC: 400/4
Монтаж: SMD

Виробник: Infineon
Активні компоненти > Датчики
Корпус: P-TSOP6-6-2
Опис: Low Power Hall Switch
Живлення, V: 2,4...5,5 V
Тип датчика: Датчик Холла
Тип монтажа: SMD

Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 25V; 1A; SC74,SOT457,TSOP6
Type of diode: Schottky rectifying
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Capacitance: 0.1nF
Max. off-state voltage: 25V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A

Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; CMOS; SMD; TSOP6; Mini Logic; 2÷6VDC; HC
Type of integrated circuit: digital
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Number of channels: dual; 2
Kind of package: reel; tape
Manufacturer series: Mini Logic
Kind of gate: NOT
Technology: CMOS
Family: HC

Виробник: NXP/Nexperia/We-En
Стандартна логіка; К-сть лог. е-тів = 2 інвертори з 2 входами, з тригером Шмітта; tз, нс = 21 @ 6 В, 50 пФ; Uживл, В = 2...6; Тексп, °C = -40...+125; TSOP-6

Виробник: NXP/Nexperia/We-En
Стандартна логіка; Uживл, В = 1,65...5,5; К-сть. л.е./тип л. е. = 1 1 x 2:1 мультиплексор; IOH/ IOL, мА = 32; 32; Тексп, °С = -40...+125; TSOP-6

Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; CMOS,TTL; SMD; TSOP6; LVC
Type of integrated circuit: digital
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Manufacturer series: Mini Logic
Technology: CMOS; TTL
Kind of integrated circuit: decoder; demultiplexer
Family: LVC

Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; CMOS,TTL; SMD; TSOP6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Number of channels: dual; 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NOT
Technology: CMOS; TTL
Family: LVC

Виробник: Alpha&Omega Semiconductor
N-канальний ПТ; Udss, В = 30; Id = 6 А; Ciss, пФ @ Uds, В = 82 @ 15; Qg, нКл = 17; Rds = 27 мОм; Ugs(th) = 2,5; Р, Вт = 2; Тексп, °C = -55...+150; Тип монт. = smd; TSOP-6

Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 15 V

Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 15 V

Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V

Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 1.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 1.5A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP-6-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V

Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; TSOP6; 4.5÷20V,7÷36V; reel,tape
Type of integrated circuit: analog switch
Case: TSOP6
Mounting: SMD
Supply voltage: 4.5...20V; 7...36V
Number of channels: 1
Kind of package: reel; tape
Output configuration: SPST-NC
Resistance: 25Ω

Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; TSOP6; 4.5÷20V,7÷36V; reel,tape
Type of integrated circuit: analog switch
Case: TSOP6
Mounting: SMD
Supply voltage: 4.5...20V; 7...36V
Number of channels: 1
Kind of package: reel; tape
Output configuration: SPST-NC
Resistance: 10Ω

Виробник: Vishay
ИМС Analogue Switch ICs Lo-Pwr HV Dual SPST TSOP-6

Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; SC74,SOT457,TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 1pF
Application: Ethernet; USB

Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; SC74,SOT457,TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 1pF
Application: Ethernet; USB

Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; SC74,SOT457,TSOP6; Ch: 4
Type of diode: TVS array
Case: SC74; SOT457; TSOP6
Mounting: SMD
Number of channels: 4
Application: Ethernet
Features of semiconductor devices: ESD protection
Capacitance: 3.1pF
Max. off-state voltage: 5.5V
Breakdown voltage: 6...9V
Leakage current: 0.1µA

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V

Виробник: International Rectifier/Infineon
N-канальний ПТ; Udss, В = 150; Id = 900 мА; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 88 @ 25; Qg, нКл = 6,8 @ 10 В; Rds = 1,2 Ом @ 540 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 5,5 В @ 250 мкА; TSOP-6

Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V