Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170303) > Сторінка 1246 з 2839
Фото | Назва | Виробник | Інформація |
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STTH802G | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: D2PAK Max. forward voltage: 0.8V Max. load current: 16A Reverse recovery time: 17ns кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH802G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 100A Case: D2PAK Max. forward voltage: 0.8V Reverse recovery time: 17ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STTH802SF | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 150A Case: TO277A Max. forward voltage: 1.08V Reverse recovery time: 17ns Leakage current: 6µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTH802SFY | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 150A Case: TO277A Max. forward voltage: 1.08V Reverse recovery time: 17ns Application: automotive industry Leakage current: 6µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STTH803D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 300V; 8A; tube; Ifsm: 100A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.85V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 162 шт: термін постачання 14-21 дні (днів) |
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STTH803G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 300V; 8A; 25ns; D2PAK; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 100A Case: D2PAK Max. forward voltage: 0.85V Reverse recovery time: 25ns кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTH806DIRG | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 90A Case: TO220ACIns Max. forward voltage: 1.85V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 55ns Leakage current: 0.2mA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STTH806DTI | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220ACIns Max. forward voltage: 2.24V Max. load current: 14A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 13ns кількість в упаковці: 1 шт |
на замовлення 55 шт: термін постачання 14-21 дні (днів) |
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STTH806G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 90A Case: D2PAK Max. forward voltage: 1.1V Reverse recovery time: 35ns кількість в упаковці: 1 шт |
на замовлення 539 шт: термін постачання 14-21 дні (днів) |
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STTH806TTI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: double series Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220AB Max. forward voltage: 2.6V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 30ns кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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STTH810D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220AC Max. forward voltage: 1.3V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 47ns кількість в упаковці: 1 шт |
на замовлення 164 шт: термін постачання 14-21 дні (днів) |
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STTH810DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220ACIns Max. forward voltage: 2V Max. load current: 20A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 85ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STTH810FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220FPAC Max. forward voltage: 2V Max. load current: 30A Reverse recovery time: 47ns Leakage current: 5µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTH810G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 60A Case: D2PAK Max. forward voltage: 2V Max. load current: 30A Reverse recovery time: 47ns Leakage current: 5µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTH810GY-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 60A Case: D2PAK Max. forward voltage: 2V Max. load current: 30A Reverse recovery time: 47ns Application: automotive industry Leakage current: 5µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STTH812D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 80A Reverse recovery time: 50ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm кількість в упаковці: 1 шт |
на замовлення 2361 шт: термін постачання 14-21 дні (днів) |
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STTH812DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 1.25V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 118 шт: термін постачання 14-21 дні (днів) |
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STTH812FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220FPAC Max. forward voltage: 1.25V Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 630 шт: термін постачання 14-21 дні (днів) |
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STTH812G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 80A Case: D2PAK Max. forward voltage: 1.25V Reverse recovery time: 50ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH8L06D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 1.3V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 105ns Leakage current: 0.2mA кількість в упаковці: 1 шт |
на замовлення 144 шт: термін постачання 14-21 дні (днів) |
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STTH8L06FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220FPAC Max. forward voltage: 0.85V Reverse recovery time: 75ns кількість в упаковці: 1 шт |
на замовлення 359 шт: термін постачання 14-21 дні (днів) |
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STTH8L06G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 120A Case: D2PAK Max. forward voltage: 0.85V Reverse recovery time: 75ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH8R04D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 0.9V Max. load current: 30A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 170 шт: термін постачання 14-21 дні (днів) |
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STTH8R04DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220ACIns Max. forward voltage: 0.9V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 42 шт: термін постачання 14-21 дні (днів) |
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STTH8R04G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 120A Case: D2PAK Max. forward voltage: 0.9V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH8R06D | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220AC Max. forward voltage: 1.4V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns Max. load current: 30A кількість в упаковці: 1 шт |
на замовлення 824 шт: термін постачання 14-21 дні (днів) |
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STTH8R06DIRG | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 1.4V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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STTH8R06FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220FPAC Max. forward voltage: 1.4V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 73 шт: термін постачання 14-21 дні (днів) |
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STTH8R06G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 80A Case: D2PAK Max. forward voltage: 1.4V Reverse recovery time: 25ns кількість в упаковці: 1 шт |
на замовлення 981 шт: термін постачання 14-21 дні (днів) |
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STTH8S06D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220AC Max. forward voltage: 3.4V Reverse recovery time: 12ns Leakage current: 20µA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTH8S06FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220FPAC Max. forward voltage: 3.4V Reverse recovery time: 18ns Leakage current: 0.2mA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STTH8S12D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AC Max. forward voltage: 1.75V Max. forward impulse current: 70A Reverse recovery time: 32ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm кількість в упаковці: 1 шт |
на замовлення 62 шт: термін постачання 14-21 дні (днів) |
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STTH8ST06DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: TO220ACIns Max. forward voltage: 2.5V Max. load current: 14A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 13ns кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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STTH8T06DI | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 2.05V Max. load current: 14A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 15ns кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH9012TV1 | STMicroelectronics |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Max. forward impulse current: 420A Max. off-state voltage: 1.2kV Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 150A Max. forward voltage: 1.2V Load current: 45A x2 Semiconductor structure: double independent Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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STTH9012TV2 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTN6050H-12M1Y | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTS22HTR | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STTS75M2F | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STU10NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 127 шт: термін постачання 14-21 дні (днів) |
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STU13NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU1HN60K3 | STMicroelectronics |
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на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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STU2NK100Z | STMicroelectronics |
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на замовлення 73 шт: термін постачання 14-21 дні (днів) |
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STU3N62K3 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU4N52K3 | STMicroelectronics |
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на замовлення 244 шт: термін постачання 14-21 дні (днів) |
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STU4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU6N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 9A Pulsed drain current: 24A Power dissipation: 90W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 9.6nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU7N105K5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU7N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STU9N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 780mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 10nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STUSB4500QTR | STMicroelectronics |
![]() Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC Type of integrated circuit: interface Interface: GPIO; I2C; USB 3.0 Kind of integrated circuit: USB PD controller Supply voltage: 4.1...22V DC Kind of package: reel; tape Case: QFN24 Mounting: SMD Operating temperature: -40...105°C кількість в упаковці: 4000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STUSBCD01BJR | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STW10N105K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21.5nC Pulsed drain current: 24A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STW10N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 5A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 32A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STW10NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Case: TO247 Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 5.7A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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STW10NK80Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 176 шт: термін постачання 14-21 дні (днів) |
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STW11NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 8.3A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD кількість в упаковці: 1 шт |
на замовлення 420 шт: термін постачання 14-21 дні (днів) |
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STW11NK90Z | STMicroelectronics |
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на замовлення 65 шт: термін постачання 14-21 дні (днів) |
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STW11NM80 | STMicroelectronics |
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на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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STW120NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A Mounting: THT Drain-source voltage: 100V Drain current: 77A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Case: TO247 Kind of package: tube Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 440A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
STTH802G |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 16A
Reverse recovery time: 17ns
кількість в упаковці: 1000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 16A
Reverse recovery time: 17ns
кількість в упаковці: 1000 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH802G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.8V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; D2PAK; Ufmax: 0.8V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.8V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH802SF |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: TO277A
Max. forward voltage: 1.08V
Reverse recovery time: 17ns
Leakage current: 6µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: TO277A
Max. forward voltage: 1.08V
Reverse recovery time: 17ns
Leakage current: 6µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH802SFY |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: TO277A
Max. forward voltage: 1.08V
Reverse recovery time: 17ns
Application: automotive industry
Leakage current: 6µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 17ns; TO277A; Ufmax: 1.08V; Ir: 6uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: TO277A
Max. forward voltage: 1.08V
Reverse recovery time: 17ns
Application: automotive industry
Leakage current: 6µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH803D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 162 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.20 грн |
6+ | 56.63 грн |
10+ | 48.10 грн |
25+ | 43.22 грн |
69+ | 40.83 грн |
250+ | 40.37 грн |
STTH803G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 25ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 25ns
кількість в упаковці: 1000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 25ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 25ns
кількість в упаковці: 1000 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH806DIRG |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO220ACIns
Max. forward voltage: 1.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 55ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO220ACIns
Max. forward voltage: 1.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 55ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH806DTI | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220ACIns
Max. forward voltage: 2.24V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220ACIns
Max. forward voltage: 2.24V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
кількість в упаковці: 1 шт
на замовлення 55 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 172.32 грн |
3+ | 148.98 грн |
10+ | 114.03 грн |
26+ | 108.51 грн |
250+ | 106.67 грн |
STTH806G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 90A
Case: D2PAK
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 90A
Case: D2PAK
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
на замовлення 539 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 90.12 грн |
10+ | 86.52 грн |
23+ | 48.00 грн |
62+ | 45.43 грн |
1000+ | 44.23 грн |
2000+ | 43.68 грн |
STTH806TTI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 168.36 грн |
3+ | 146.11 грн |
10+ | 107.59 грн |
28+ | 102.08 грн |
STTH810D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
на замовлення 164 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 76.26 грн |
10+ | 59.11 грн |
23+ | 47.82 грн |
62+ | 45.98 грн |
100+ | 44.97 грн |
250+ | 43.68 грн |
STTH810DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220ACIns
Max. forward voltage: 2V
Max. load current: 20A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220ACIns; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220ACIns
Max. forward voltage: 2V
Max. load current: 20A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH810FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 60A; TO220FPAC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Leakage current: 5µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH810G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Leakage current: 5µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH810GY-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Application: automotive industry
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 47ns; D2PAK; Ufmax: 2V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: D2PAK
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 47ns
Application: automotive industry
Leakage current: 5µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH812D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Reverse recovery time: 50ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Reverse recovery time: 50ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
кількість в упаковці: 1 шт
на замовлення 2361 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 102.01 грн |
10+ | 54.53 грн |
32+ | 34.49 грн |
86+ | 32.65 грн |
2000+ | 32.28 грн |
5000+ | 31.36 грн |
STTH812DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 118 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.84 грн |
10+ | 97.41 грн |
13+ | 82.76 грн |
36+ | 78.17 грн |
100+ | 74.49 грн |
STTH812FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 630 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.21 грн |
25+ | 45.93 грн |
67+ | 41.84 грн |
500+ | 40.28 грн |
STTH812G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: D2PAK
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: D2PAK
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH8L06D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 105ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 105ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 79.23 грн |
10+ | 62.55 грн |
21+ | 51.41 грн |
58+ | 48.56 грн |
100+ | 48.10 грн |
250+ | 46.72 грн |
STTH8L06FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAC
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAC
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
на замовлення 359 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 79.23 грн |
5+ | 68.76 грн |
10+ | 58.39 грн |
21+ | 52.19 грн |
57+ | 49.34 грн |
250+ | 48.92 грн |
STTH8L06G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH8R04D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 170 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 64.37 грн |
25+ | 48.13 грн |
29+ | 37.34 грн |
80+ | 35.31 грн |
1000+ | 34.49 грн |
5000+ | 33.93 грн |
STTH8R04DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220ACIns
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220ACIns
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 98.36 грн |
10+ | 82.76 грн |
14+ | 81.62 грн |
37+ | 77.17 грн |
50+ | 75.41 грн |
250+ | 74.49 грн |
STTH8R04G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.9V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.9V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH8R06D | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Max. load current: 30A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Max. load current: 30A
кількість в упаковці: 1 шт
на замовлення 824 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.94 грн |
5+ | 74.49 грн |
10+ | 54.53 грн |
25+ | 43.41 грн |
50+ | 42.03 грн |
69+ | 41.01 грн |
STTH8R06DIRG |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 156.47 грн |
5+ | 107.91 грн |
10+ | 87.36 грн |
15+ | 74.49 грн |
40+ | 70.81 грн |
50+ | 68.05 грн |
STTH8R06FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 73 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.08 грн |
10+ | 58.73 грн |
26+ | 42.95 грн |
69+ | 40.65 грн |
1000+ | 39.54 грн |
2000+ | 39.08 грн |
STTH8R06G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
кількість в упаковці: 1 шт
на замовлення 981 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 89.13 грн |
10+ | 72.00 грн |
23+ | 46.81 грн |
64+ | 44.23 грн |
500+ | 42.85 грн |
1000+ | 42.58 грн |
STTH8S06D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Reverse recovery time: 12ns
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Reverse recovery time: 12ns
Leakage current: 20µA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STTH8S06FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 3.4V
Reverse recovery time: 18ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 3.4V
Reverse recovery time: 18ns
Leakage current: 0.2mA
кількість в упаковці: 1 шт
товару немає в наявності
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STTH8S12D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Reverse recovery time: 32ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Reverse recovery time: 32ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
кількість в упаковці: 1 шт
на замовлення 62 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 76.26 грн |
10+ | 63.03 грн |
25+ | 44.23 грн |
67+ | 41.84 грн |
500+ | 40.28 грн |
STTH8ST06DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: TO220ACIns
Max. forward voltage: 2.5V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: TO220ACIns
Max. forward voltage: 2.5V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 167.37 грн |
3+ | 152.80 грн |
9+ | 126.83 грн |
24+ | 119.91 грн |
250+ | 114.95 грн |
STTH8T06DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 2.05V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 15ns
кількість в упаковці: 1000 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 2.05V
Max. load current: 14A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 15ns
кількість в упаковці: 1000 шт
товару немає в наявності
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STTH9012TV1 | ![]() |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 2451.09 грн |
2+ | 2234.63 грн |
STTH9012TV2 | ![]() |
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Виробник: STMicroelectronics
STTH9012TV2 Diode modules
STTH9012TV2 Diode modules
товару немає в наявності
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од. на суму грн.
STTN6050H-12M1Y |
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Виробник: STMicroelectronics
STTN6050H-12M1Y SMD/THT thyristors
STTN6050H-12M1Y SMD/THT thyristors
товару немає в наявності
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STTS22HTR |
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Виробник: STMicroelectronics
STTS22HTR Temperature transducers
STTS22HTR Temperature transducers
товару немає в наявності
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STTS75M2F |
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Виробник: STMicroelectronics
STTS75M2F Temperature transducers
STTS75M2F Temperature transducers
товару немає в наявності
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од. на суму грн.
STU10NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 127 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.20 грн |
5+ | 71.05 грн |
21+ | 51.87 грн |
58+ | 49.01 грн |
STU13NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STU1HN60K3 |
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Виробник: STMicroelectronics
STU1HN60K3 THT N channel transistors
STU1HN60K3 THT N channel transistors
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.67 грн |
57+ | 18.94 грн |
157+ | 17.93 грн |
500+ | 17.86 грн |
STU2NK100Z |
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Виробник: STMicroelectronics
STU2NK100Z THT N channel transistors
STU2NK100Z THT N channel transistors
на замовлення 73 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 180.24 грн |
26+ | 42.30 грн |
71+ | 39.54 грн |
STU3N62K3 |
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Виробник: STMicroelectronics
STU3N62K3 THT N channel transistors
STU3N62K3 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STU4N52K3 |
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Виробник: STMicroelectronics
STU4N52K3 THT N channel transistors
STU4N52K3 THT N channel transistors
на замовлення 244 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.04 грн |
48+ | 22.62 грн |
131+ | 21.43 грн |
STU4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
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од. на суму грн.
STU6N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 90W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 90W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STU7N105K5 |
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Виробник: STMicroelectronics
STU7N105K5 THT N channel transistors
STU7N105K5 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STU7N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STU9N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
кількість в упаковці: 1 шт
товару немає в наявності
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од. на суму грн.
STUSB4500QTR |
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Виробник: STMicroelectronics
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
кількість в упаковці: 4000 шт
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
кількість в упаковці: 4000 шт
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од. на суму грн.
STUSBCD01BJR |
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Виробник: STMicroelectronics
STUSBCD01BJR Integrated circuits - others
STUSBCD01BJR Integrated circuits - others
товару немає в наявності
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од. на суму грн.
STW10N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW10N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW10NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 392.18 грн |
10+ | 116.51 грн |
27+ | 106.67 грн |
STW10NK80Z | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 424.86 грн |
8+ | 139.43 грн |
22+ | 126.91 грн |
STW11NK100Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
на замовлення 420 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 487.25 грн |
8+ | 150.89 грн |
21+ | 137.94 грн |
STW11NK90Z |
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Виробник: STMicroelectronics
STW11NK90Z THT N channel transistors
STW11NK90Z THT N channel transistors
на замовлення 65 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 306.02 грн |
7+ | 167.37 грн |
18+ | 158.17 грн |
STW11NM80 | ![]() |
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Виробник: STMicroelectronics
STW11NM80 THT N channel transistors
STW11NM80 THT N channel transistors
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 469.42 грн |
5+ | 222.54 грн |
14+ | 209.67 грн |
STW120NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A
Mounting: THT
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Case: TO247
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A
Mounting: THT
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Case: TO247
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
кількість в упаковці: 1 шт
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