Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162683) > Сторінка 340 з 2712
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STU7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STL100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STU8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STB25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STF25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
на замовлення 215 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD15N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
STP25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STB20N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 18A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STL100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V |
на замовлення 5634 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STB25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD15N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 1239 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
на замовлення 10988 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STD8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 3750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STGIPS30C60 | STMicroelectronics |
Description: IGBT IPM MODULE 30A 600V SDIP-25 Packaging: Tray Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500VDC Current: 30 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
STP270N8F7 | STMicroelectronics |
Description: MOSFET N CH 80V 180A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V |
на замовлення 1006 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STB20N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 18A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STL8N10LF3 | STMicroelectronics |
Description: MOSFET N CH 100V 20A PWRFLT5X6Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 4.3W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STW25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
на замовлення 263 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STL8N10LF3 | STMicroelectronics |
Description: MOSFET N CH 100V 20A PWRFLT5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 4.3W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4405 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STI300N4F6 | STMicroelectronics |
Description: MOSFET N CH 40V 160A I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STU80N4F6 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STL11N4LLF5 | STMicroelectronics |
Description: MOSFET N-CH 40V 11A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STL11N4LLF5 | STMicroelectronics |
Description: MOSFET N-CH 40V 11A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STL6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
на замовлення 1449 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STF8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 644 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
STP8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STL6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V POWERFLATPackaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STM32L152C-DISCO | STMicroelectronics |
Description: DISCOVERY STM32L152 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32L152 Platform: Discovery Part Status: Active |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
HCF4010YM013TR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 20V 16-SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Number of Bits per Element: 1 Current - Output High, Low: 3mA, 36mA Supplier Device Package: 16-SO Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 3 V ~ 20 V Voltage - VCCB: 3 V ~ 20 V Part Status: Active Number of Circuits: 6 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
HCF4010YM013TR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 20V 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Number of Bits per Element: 1 Current - Output High, Low: 3mA, 36mA Supplier Device Package: 16-SO Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 3 V ~ 20 V Voltage - VCCB: 3 V ~ 20 V Part Status: Active Number of Circuits: 6 |
на замовлення 6718 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
STEVAL-IKR001V7D | STMicroelectronics |
Description: BOARD EVAL SPIRIT1 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
STEVAL-MKI132V1 | STMicroelectronics |
Description: BOARD EVAL BLUEMOTION FOR MEMS |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
STEVAL-MKI134V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD LIS3DSHPackaging: Bulk Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit Function: Accelerometer Interface: I2C, Serial, SPI Type: Sensor Contents: Board(s) Voltage - Supply: 1.71V ~ 3.6V Sensor Type: Accelerometer, 3 Axis Utilized IC / Part: LIS3DSH Supplied Contents: Board(s) Embedded: No Sensing Range: ±2g, 4g, 6g, 8g, 16g Platform: Professional MEMS Tool Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STEVAL-ISV003V2 | STMicroelectronics |
Description: EVAL BOARD FOR STM32F103ZEPackaging: Bulk Voltage - Output: 240VAC Voltage - Input: 18V ~ 55V Current - Output: 1.06A Contents: Board(s) Board Type: Fully Populated Utilized IC / Part: STM32F103ZE Supplied Contents: Board(s) Main Purpose: DC/AC Converter Outputs and Type: 1 Isolated Output Part Status: Obsolete Power - Output: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
STW57N65M5-4 | STMicroelectronics |
Description: MOSFET N-CH 650V 42A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LMV822IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x2 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 3.5 mV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TSV854AIYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV711ICT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SC70-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV852AIYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV854IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV854IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2331 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LMV824IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x4 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 3.5 mV Supplier Device Package: 14-TSSOP Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LMV822AIYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x2 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSX631ILT | STMicroelectronics |
Description: IC OPAMP GP 200KHZ RRO SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV632IYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 50µA (x2 Channels) Slew Rate: 0.34V/µs Gain Bandwidth Product: 880 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 3 mV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 74 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 6776 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TSV852AIYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TS3021IYLT | STMicroelectronics |
Description: IC COMPARATOR 1 GEN PUR SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5V Supplier Device Package: SOT-23-5 Propagation Delay (Max): 105ns Current - Quiescent (Max): 90µA Voltage - Input Offset (Max): 6mV @ 5V Current - Input Bias (Max): 0.16µA @ 5V CMRR, PSRR (Typ): 79dB CMRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 5501 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LMV822AIYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x2 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV852IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 8-MiniSO Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV852AIYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-MiniSO Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LMV821AIYLT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 800 µV Supplier Device Package: SOT-23-5 Grade: Automotive Part Status: Active Number of Circuits: 1 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TS332IYDT | STMicroelectronics |
Description: IC COMPARATOR 2 GEN PUR 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5V Supplier Device Package: 8-SOIC Propagation Delay (Max): 720ns Current - Quiescent (Max): 26µA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.04µA @ 5V Current - Output (Typ): 93mA @ 5V CMRR, PSRR (Typ): 79dB CMRR Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5665 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TSV634IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 50µA (x4 Channels) Slew Rate: 0.34V/µs Gain Bandwidth Product: 880 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 3 mV Supplier Device Package: 14-TSSOP Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 74 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 1472 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TSX562IQ2T | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 250µA Slew Rate: 1.1V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 8-DFN (2x2) Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 92 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV852IYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TS331IYLT | STMicroelectronics |
Description: IC COMPARATOR 1 GEN PUR SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5V Supplier Device Package: SOT-23-5 Propagation Delay (Max): 720ns Current - Quiescent (Max): 26µA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.04µA @ 5V Current - Output (Typ): 93mA @ 5V CMRR, PSRR (Typ): 79dB CMRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TSV854AIYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1345 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TSV852IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 8-MiniSO Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| STU7N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL100N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STU8N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STB25N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STF25N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 435.26 грн |
| 50+ | 231.42 грн |
| 100+ | 221.09 грн |
| STD15N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику
од. на суму грн.
| STP25N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 322.99 грн |
| 50+ | 179.30 грн |
| STD7N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 58.62 грн |
| STD8N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 69.93 грн |
| STB20N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL100N10F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
на замовлення 5634 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.26 грн |
| 10+ | 141.13 грн |
| 100+ | 97.60 грн |
| 500+ | 76.58 грн |
| STB25N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 422.30 грн |
| 10+ | 287.32 грн |
| 100+ | 207.28 грн |
| STD15N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 1239 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.63 грн |
| 10+ | 135.97 грн |
| 100+ | 93.91 грн |
| 500+ | 73.33 грн |
| STD7N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
на замовлення 10988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.49 грн |
| 10+ | 124.33 грн |
| 100+ | 85.37 грн |
| 500+ | 64.84 грн |
| STD8N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.13 грн |
| 10+ | 142.21 грн |
| 100+ | 98.39 грн |
| 500+ | 77.35 грн |
| STGIPS30C60 |
Виробник: STMicroelectronics
Description: IGBT IPM MODULE 30A 600V SDIP-25
Packaging: Tray
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500VDC
Current: 30 A
Voltage: 600 V
Description: IGBT IPM MODULE 30A 600V SDIP-25
Packaging: Tray
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500VDC
Current: 30 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| STP270N8F7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 80V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Description: MOSFET N CH 80V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 1006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 397.26 грн |
| 50+ | 198.56 грн |
| 100+ | 186.76 грн |
| STB20N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL8N10LF3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 56.79 грн |
| STW25N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 509.53 грн |
| 30+ | 358.21 грн |
| 120+ | 302.58 грн |
| STL8N10LF3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.31 грн |
| 10+ | 120.75 грн |
| 100+ | 82.78 грн |
| 500+ | 62.44 грн |
| 1000+ | 62.39 грн |
| STI300N4F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 40V 160A I2PAK
Description: MOSFET N CH 40V 160A I2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STU80N4F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| STL11N4LLF5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.31 грн |
| STL11N4LLF5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| STL6N3LLH6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.54 грн |
| 10+ | 50.90 грн |
| 100+ | 34.70 грн |
| 500+ | 26.62 грн |
| 1000+ | 24.09 грн |
| STF8N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 644 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.54 грн |
| 50+ | 117.14 грн |
| 100+ | 105.79 грн |
| 500+ | 80.61 грн |
| STP8N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.72 грн |
| 50+ | 110.29 грн |
| 100+ | 99.51 грн |
| 500+ | 75.63 грн |
| STL6N3LLH6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
товару немає в наявності
В кошику
од. на суму грн.
| STM32L152C-DISCO |
![]() |
Виробник: STMicroelectronics
Description: DISCOVERY STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Platform: Discovery
Part Status: Active
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 964.64 грн |
| HCF4010YM013TR |
![]() |
Виробник: STMicroelectronics
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 28.66 грн |
| HCF4010YM013TR |
![]() |
Виробник: STMicroelectronics
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
на замовлення 6718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.32 грн |
| 10+ | 42.33 грн |
| 25+ | 38.05 грн |
| 100+ | 31.37 грн |
| 250+ | 29.28 грн |
| 500+ | 28.02 грн |
| 1000+ | 27.36 грн |
| STEVAL-IKR001V7D |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL SPIRIT1
Description: BOARD EVAL SPIRIT1
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STEVAL-MKI132V1 |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL BLUEMOTION FOR MEMS
Description: BOARD EVAL BLUEMOTION FOR MEMS
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STEVAL-MKI134V1 |
![]() |
Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD LIS3DSH
Packaging: Bulk
Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS3DSH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 6g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Obsolete
Description: DIL24 ADAPTER BOARD LIS3DSH
Packaging: Bulk
Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS3DSH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 6g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ISV003V2 |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STM32F103ZE
Packaging: Bulk
Voltage - Output: 240VAC
Voltage - Input: 18V ~ 55V
Current - Output: 1.06A
Contents: Board(s)
Board Type: Fully Populated
Utilized IC / Part: STM32F103ZE
Supplied Contents: Board(s)
Main Purpose: DC/AC Converter
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 250 W
Description: EVAL BOARD FOR STM32F103ZE
Packaging: Bulk
Voltage - Output: 240VAC
Voltage - Input: 18V ~ 55V
Current - Output: 1.06A
Contents: Board(s)
Board Type: Fully Populated
Utilized IC / Part: STM32F103ZE
Supplied Contents: Board(s)
Main Purpose: DC/AC Converter
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 250 W
товару немає в наявності
В кошику
од. на суму грн.
| STW57N65M5-4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| LMV822IYST |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.18 грн |
| 10+ | 70.19 грн |
| 25+ | 63.64 грн |
| 100+ | 52.91 грн |
| 250+ | 49.66 грн |
| 500+ | 47.71 грн |
| 1000+ | 45.35 грн |
| TSV854AIYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| TSV711ICT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Description: IC OPAMP GP 1 CIRCUIT SC70-5
товару немає в наявності
В кошику
од. на суму грн.
| TSV852AIYDT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSV854IYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| TSV854IYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2331 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.35 грн |
| 10+ | 206.16 грн |
| 25+ | 194.53 грн |
| 100+ | 155.55 грн |
| 250+ | 146.06 грн |
| 500+ | 127.80 грн |
| 1000+ | 104.16 грн |
| LMV824IYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| LMV822AIYDT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSX631ILT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 200KHZ RRO SOT23-5
Description: IC OPAMP GP 200KHZ RRO SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| TSV632IYDT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x2 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x2 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 6776 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.68 грн |
| 10+ | 111.10 грн |
| 25+ | 105.42 грн |
| 100+ | 81.24 грн |
| 250+ | 75.95 грн |
| 500+ | 67.12 грн |
| 1000+ | 52.12 грн |
| TSV852AIYDT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TS3021IYLT |
![]() |
Виробник: STMicroelectronics
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: SOT-23-5
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: SOT-23-5
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5501 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.86 грн |
| 10+ | 80.58 грн |
| 25+ | 73.18 грн |
| 100+ | 61.00 грн |
| 250+ | 57.35 грн |
| 500+ | 55.14 грн |
| 1000+ | 52.45 грн |
| LMV822AIYST |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSV852IYST |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSV852AIYST |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| LMV821AIYLT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.50 грн |
| 10+ | 86.74 грн |
| 25+ | 78.87 грн |
| 100+ | 65.83 грн |
| 250+ | 61.93 грн |
| 500+ | 59.58 грн |
| 1000+ | 56.70 грн |
| TS332IYDT |
![]() |
Виробник: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 720ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Qualification: AEC-Q100
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 720ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.00 грн |
| 10+ | 80.00 грн |
| 25+ | 72.55 грн |
| 100+ | 60.35 грн |
| 250+ | 56.66 грн |
| 500+ | 54.44 грн |
| 1000+ | 51.75 грн |
| TSV634IYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x4 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x4 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.77 грн |
| 10+ | 154.60 грн |
| 25+ | 145.90 грн |
| 100+ | 116.67 грн |
| 250+ | 109.55 грн |
| 500+ | 95.85 грн |
| 1000+ | 78.12 грн |
| TSX562IQ2T |
![]() |
Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-DFN (2x2)
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-DFN (2x2)
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSV852IYDT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| TS331IYLT |
![]() |
Виробник: STMicroelectronics
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: SOT-23-5
Propagation Delay (Max): 720ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: SOT-23-5
Propagation Delay (Max): 720ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TSV854AIYPT |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.90 грн |
| 10+ | 203.33 грн |
| 25+ | 192.27 грн |
| 100+ | 156.38 грн |
| 250+ | 148.36 грн |
| 500+ | 133.12 грн |
| 1000+ | 110.43 грн |
| TSV852IYST |
![]() |
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.





















;;5.jpg)







