Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132064) > Сторінка 2195 з 2202
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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STN3N45K3 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 450V; 0.6A; 3W; SOT223; ESD Mounting: SMD Power dissipation: 3W Polarisation: unipolar Version: ESD Technology: SuperMesh™ Drain current: 0.6A Kind of channel: enhancement Drain-source voltage: 450V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: SOT223 On-state resistance: 4Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH806TTI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; Ifsm: 80A; TO220AB; tube; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: double series Features of semiconductor devices: ultrafast switching Max. forward impulse current: 80A Case: TO220AB Kind of package: tube Max. forward voltage: 2.6V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 30ns |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
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STTH806DTI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; Ifsm: 180A; TO220ACIns; tube; 13ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 180A Case: TO220ACIns Kind of package: tube Max. forward voltage: 2.24V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 13ns Max. load current: 14A |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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STTH806G-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 90A Case: D2PAK Kind of package: reel; tape Max. forward voltage: 1.1V Reverse recovery time: 35ns |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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STF23NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; 600V; 19.5A; 35W; TO220FP Type of transistor: N-MOSFET Technology: FDmesh™ II Drain-source voltage: 600V Drain current: 19.5A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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SM30T56CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 53.3V; 38A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 38A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM32C562VET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 144MHz; LQFP100; 2.7÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 144MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 2.7...3.6V DC Interface: CAN FD; I2C x2; I2S x3; I3C; LPUART; SPI x3; UART x2; USART x3; USB Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); DMA; PWM Memory: 128kB RAM; 512kB FLASH Operating temperature: -40...140°C Number of 12bit A/D converters: 2 Number of comparators: 1 Number of 12bit D/A converters: 1 Number of 16bit timers: 6 Number of PWM channels: 2 Number of 32bit timers: 2 Ciphering: AES; HMAC; SHA-256 hash algorithm Family: STM32C5 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STEVAL-IPMNM2N | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STIPN2M50T-H; Add-on connectors: 1 Type of development kit: evaluation Components: STIPN2M50T-H Interface: GPIO Connection: Motor Control Expansion Connector; screw Number of add-on connectors: 1 Output current: 0.6A Power: 0.1kW Operating voltage: 125...400V AC Protection: anti-overload OPP; overheating OTP Application: motors Kit contents: expansion board Additional functions: speed sensor; temperature sensor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STEVAL-IPMNM2S | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STIPNS2M50T-H; Add-on connectors: 1 Type of development kit: evaluation Components: STIPNS2M50T-H Interface: GPIO Connection: Motor Control Expansion Connector; screw Number of add-on connectors: 1 Output current: 1.2A Power: 0.1kW Operating voltage: 125...400V AC Protection: anti-overload OPP; overheating OTP Application: motors Kit contents: expansion board Additional functions: speed sensor; temperature sensor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STPSC8H065D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 2.5V Max. load current: 33A Max. forward impulse current: 420A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPSC8H065DI | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 2.5V Max. load current: 33A Leakage current: 335µA Max. forward impulse current: 420A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STPSC8H065DLF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 8A Type of diode: Schottky rectifying Case: PowerFLAT Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.95V Max. load current: 32A Leakage current: 335µA Max. forward impulse current: 0.8kA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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M95P32-IXMNT/E | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32Mb EEPROM Interface: SPI Memory organisation: 4Mx8bit Operating voltage: 1.6...3.6V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STM32F746BET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.7...3.6V DC Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 320kB SRAM; 512kB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 2 Family: STM32F7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM32F479VGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 71 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x4; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 384kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 14 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||
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STW12N150K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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| STM32F091CCU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; UFQFPN48; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 38 Case: UFQFPN48 Supply voltage: 2...3.6V DC Interface: CAN; HDMI CEC; I2C x2; SPI x2; USART x6 Kind of architecture: Cortex M0 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 32kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 13 Number of 12bit D/A converters: 2 Number of 16bit timers: 8 Number of 32bit timers: 1 Family: STM32F0 Kind of package: in-tray Kind of core: 32-bit |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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STM8AL3136TAY | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP32 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; LIN; SPI; USART Integrated circuit features: AWU; Beeper; IWDG; RTC; WWDG Memory: 1kB EEPROM; 2kB RAM; 8kB FLASH Number of 12bit A/D converters: 22 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Family: STM8AL Kind of core: 8-bit |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||
| STM32WB15CCU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; -40÷105°C Interface: ADC; I2C; SPI; UART; USART Kind of architecture: Cortex M4 Clock frequency: 64MHz Case: UFQFPN48 Mounting: SMD Number of inputs/outputs: 30 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...105°C |
на замовлення 780 шт: термін постачання 14-30 дні (днів) |
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| STM32WB35CCU6ATR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; Core: 32-bit Kind of core: 32-bit Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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| STM32WBA50KGU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C Interface: GPIO; I2C; IrDA; SPI; UART; USART Kind of architecture: Cortex M33 Clock frequency: 100MHz Case: UFQFPN32 Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| STM32WBA54CGU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; -40÷85°C Interface: GPIO; I2C; IrDA; SPI; UART; USART Kind of architecture: Cortex M33 Clock frequency: 100MHz Case: UFQFPN48 Mounting: SMD Number of inputs/outputs: 35 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| STM32WBA54KGU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C Interface: GPIO; I2C; IrDA; SPI; UART; USART Kind of architecture: Cortex M33 Clock frequency: 100MHz Case: UFQFPN32 Mounting: SMD Number of inputs/outputs: 20 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| STM32WBA55UGI6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 100MHz; Architecture: Cortex M33 Kind of architecture: Cortex M33 Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 35 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...105°C |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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| LED2472GQTR | STMicroelectronics |
Category: LED driversDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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STP7N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 8.8nC |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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STD7N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Power dissipation: 60W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STF7N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 7.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STF7N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 8.8nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STL7N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 67W Case: PowerFLAT 5x5 Gate-source voltage: ±25V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 8.8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STW27N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 33nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STM32MP257CAI3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257DAL3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257DAK3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257FAL3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: I2C; SPI Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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PM8803TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP20 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8805TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: VFQFPN43 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PM8800A | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP16 Mounting: SMD Kind of package: tube Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PM8800ATR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP16 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8801 | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP24 Mounting: SMD Kind of package: tube Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PM8803 | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP20 Mounting: SMD Kind of package: tube Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8804TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: VFQFPN16 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TDA7265 | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB30NF10T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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STP30NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3 Technology: STripFET™ Drain current: 19A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 75mΩ Mounting: THT Power dissipation: 125W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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STP13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STFU13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STF15N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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STW15N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP127 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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STTH16L06CFP | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220FPAB Kind of package: tube Max. forward voltage: 1.05V Reverse recovery time: 35ns |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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STTH16L06CT | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH16L06CTY | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH3R06U | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 3A Case: SMB Max. forward voltage: 1V Max. forward impulse current: 45A Reverse recovery time: 35ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
на замовлення 5056 шт: термін постачання 14-30 дні (днів) |
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STTH1212D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 1.25V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 50ns |
на замовлення 633 шт: термін постачання 14-30 дні (днів) |
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STTH1R04A | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A Semiconductor structure: single diode Max. off-state voltage: 0.4kV Load current: 1A Case: SMA Max. forward voltage: 0.9V Max. forward impulse current: 30A Reverse recovery time: 14ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
на замовлення 1965 шт: термін постачання 14-30 дні (днів) |
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| ST25DV04K-JFR6D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
на замовлення 30000 шт: термін постачання 14-30 дні (днів) |
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| ST25DV64KC-JF8D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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| STN3N45K3 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.6A; 3W; SOT223; ESD
Mounting: SMD
Power dissipation: 3W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 450V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.6A; 3W; SOT223; ESD
Mounting: SMD
Power dissipation: 3W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 450V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 4Ω
товару немає в наявності
В кошику
од. на суму грн.
| STTH806TTI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 80A; TO220AB; tube; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 80A; TO220AB; tube; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.21 грн |
| 5+ | 123.59 грн |
| 10+ | 104.12 грн |
| 25+ | 89.73 грн |
| STTH806DTI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 180A; TO220ACIns; tube; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.24V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Max. load current: 14A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 180A; TO220ACIns; tube; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.24V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Max. load current: 14A
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 162.27 грн |
| 10+ | 122.74 грн |
| STTH806G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 89.34 грн |
| 10+ | 55.79 грн |
| 100+ | 40.21 грн |
| STF23NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; 600V; 19.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Drain-source voltage: 600V
Drain current: 19.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; 600V; 19.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Drain-source voltage: 600V
Drain current: 19.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 131.27 грн |
| SM30T56CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3V; 38A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.3V; 38A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| STM32C562VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 144MHz; LQFP100; 2.7÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 144MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 2.7...3.6V DC
Interface: CAN FD; I2C x2; I2S x3; I3C; LPUART; SPI x3; UART x2; USART x3; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); DMA; PWM
Memory: 128kB RAM; 512kB FLASH
Operating temperature: -40...140°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Number of 12bit D/A converters: 1
Number of 16bit timers: 6
Number of PWM channels: 2
Number of 32bit timers: 2
Ciphering: AES; HMAC; SHA-256 hash algorithm
Family: STM32C5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 144MHz; LQFP100; 2.7÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 144MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 2.7...3.6V DC
Interface: CAN FD; I2C x2; I2S x3; I3C; LPUART; SPI x3; UART x2; USART x3; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); DMA; PWM
Memory: 128kB RAM; 512kB FLASH
Operating temperature: -40...140°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Number of 12bit D/A converters: 1
Number of 16bit timers: 6
Number of PWM channels: 2
Number of 32bit timers: 2
Ciphering: AES; HMAC; SHA-256 hash algorithm
Family: STM32C5
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-IPMNM2N |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STIPN2M50T-H; Add-on connectors: 1
Type of development kit: evaluation
Components: STIPN2M50T-H
Interface: GPIO
Connection: Motor Control Expansion Connector; screw
Number of add-on connectors: 1
Output current: 0.6A
Power: 0.1kW
Operating voltage: 125...400V AC
Protection: anti-overload OPP; overheating OTP
Application: motors
Kit contents: expansion board
Additional functions: speed sensor; temperature sensor
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STIPN2M50T-H; Add-on connectors: 1
Type of development kit: evaluation
Components: STIPN2M50T-H
Interface: GPIO
Connection: Motor Control Expansion Connector; screw
Number of add-on connectors: 1
Output current: 0.6A
Power: 0.1kW
Operating voltage: 125...400V AC
Protection: anti-overload OPP; overheating OTP
Application: motors
Kit contents: expansion board
Additional functions: speed sensor; temperature sensor
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-IPMNM2S |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STIPNS2M50T-H; Add-on connectors: 1
Type of development kit: evaluation
Components: STIPNS2M50T-H
Interface: GPIO
Connection: Motor Control Expansion Connector; screw
Number of add-on connectors: 1
Output current: 1.2A
Power: 0.1kW
Operating voltage: 125...400V AC
Protection: anti-overload OPP; overheating OTP
Application: motors
Kit contents: expansion board
Additional functions: speed sensor; temperature sensor
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STIPNS2M50T-H; Add-on connectors: 1
Type of development kit: evaluation
Components: STIPNS2M50T-H
Interface: GPIO
Connection: Motor Control Expansion Connector; screw
Number of add-on connectors: 1
Output current: 1.2A
Power: 0.1kW
Operating voltage: 125...400V AC
Protection: anti-overload OPP; overheating OTP
Application: motors
Kit contents: expansion board
Additional functions: speed sensor; temperature sensor
товару немає в наявності
В кошику
од. на суму грн.
| STPSC8H065D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Max. load current: 33A
Max. forward impulse current: 420A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Max. load current: 33A
Max. forward impulse current: 420A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| STPSC8H065DI |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Max. load current: 33A
Leakage current: 335µA
Max. forward impulse current: 420A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 2.5V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.5V
Max. load current: 33A
Leakage current: 335µA
Max. forward impulse current: 420A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| STPSC8H065DLF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 8A
Type of diode: Schottky rectifying
Case: PowerFLAT
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Max. load current: 32A
Leakage current: 335µA
Max. forward impulse current: 0.8kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 8A
Type of diode: Schottky rectifying
Case: PowerFLAT
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Max. load current: 32A
Leakage current: 335µA
Max. forward impulse current: 0.8kA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| M95P32-IXMNT/E |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STM32F746BET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 512kB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 512kB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
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| STM32F479VGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 71
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x4; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 14
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 71
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x4; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 14
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 90 шт
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| STW12N150K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 559.74 грн |
| 3+ | 453.73 грн |
| 5+ | 416.48 грн |
| 10+ | 397.01 грн |
| STM32F091CCU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN48; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: UFQFPN48
Supply voltage: 2...3.6V DC
Interface: CAN; HDMI CEC; I2C x2; SPI x2; USART x6
Kind of architecture: Cortex M0
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN48; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: UFQFPN48
Supply voltage: 2...3.6V DC
Interface: CAN; HDMI CEC; I2C x2; SPI x2; USART x6
Kind of architecture: Cortex M0
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Kind of package: in-tray
Kind of core: 32-bit
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 412.97 грн |
| 3+ | 352.15 грн |
| 5+ | 330.99 грн |
| 10+ | 302.20 грн |
| 25+ | 284.43 грн |
| STM8AL3136TAY |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Integrated circuit features: AWU; Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 8kB FLASH
Number of 12bit A/D converters: 22
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8AL
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 1.65÷3.6VDC; Cmp: 2; PWM: 4
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Integrated circuit features: AWU; Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 8kB FLASH
Number of 12bit A/D converters: 22
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8AL
Kind of core: 8-bit
товару немає в наявності
Мінімальне замовлення: 250 шт
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| STM32WB15CCU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; -40÷105°C
Interface: ADC; I2C; SPI; UART; USART
Kind of architecture: Cortex M4
Clock frequency: 64MHz
Case: UFQFPN48
Mounting: SMD
Number of inputs/outputs: 30
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; -40÷105°C
Interface: ADC; I2C; SPI; UART; USART
Kind of architecture: Cortex M4
Clock frequency: 64MHz
Case: UFQFPN48
Mounting: SMD
Number of inputs/outputs: 30
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
на замовлення 780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 520+ | 93.90 грн |
| STM32WB35CCU6ATR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; Core: 32-bit
Kind of core: 32-bit
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; Core: 32-bit
Kind of core: 32-bit
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 343.68 грн |
| STM32WBA50KGU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN32
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN32
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 222.44 грн |
| STM32WBA54CGU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN48
Mounting: SMD
Number of inputs/outputs: 35
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN48
Mounting: SMD
Number of inputs/outputs: 35
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 299.93 грн |
| STM32WBA54KGU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN32
Mounting: SMD
Number of inputs/outputs: 20
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN32; -40÷85°C
Interface: GPIO; I2C; IrDA; SPI; UART; USART
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Case: UFQFPN32
Mounting: SMD
Number of inputs/outputs: 20
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 286.25 грн |
| STM32WBA55UGI6 |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; Architecture: Cortex M33
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 35
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; Architecture: Cortex M33
Kind of architecture: Cortex M33
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 35
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 319.98 грн |
| LED2472GQTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| STP7N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.60 грн |
| 10+ | 75.34 грн |
| 50+ | 52.48 грн |
| STD7N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STF7N60DM2 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 7.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 7.5nC
товару немає в наявності
В кошику
од. на суму грн.
| STF7N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
товару немає в наявності
В кошику
од. на суму грн.
| STL7N60M2 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 8.8nC
товару немає в наявності
В кошику
од. на суму грн.
| STW27N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 33nC
товару немає в наявності
В кошику
од. на суму грн.
| STM32MP257CAI3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1849.69 грн |
| STM32MP257DAL3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1423.96 грн |
| STM32MP257DAK3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1562.53 грн |
| STM32MP257FAL3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1487.78 грн |
| PM8803TR |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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| PM8805TR |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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| PM8800A |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
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| PM8800ATR |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
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| PM8801 |
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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| PM8803 |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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| PM8804TR |
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Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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| TDA7265 |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
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| STB30NF10T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.39 грн |
| 10+ | 95.40 грн |
| 100+ | 58.49 грн |
| 250+ | 49.52 грн |
| STP30NF20 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Technology: STripFET™
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Technology: STripFET™
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
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| STW13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 359.18 грн |
| 10+ | 224.33 грн |
| STP13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.69 грн |
| 3+ | 231.94 грн |
| 10+ | 187.08 грн |
| STB13N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Мінімальне замовлення: 1000 шт
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| STFU13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| STF15N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.40 грн |
| 3+ | 243.80 грн |
| 10+ | 201.47 грн |
| STW15N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| TIP127 |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.26 грн |
| 10+ | 42.75 грн |
| STTH16L06CFP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.98 грн |
| 5+ | 117.67 грн |
| 10+ | 103.27 грн |
| 25+ | 87.19 грн |
| 50+ | 85.50 грн |
| STTH16L06CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
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| STTH16L06CTY |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
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| STTH3R06U |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
на замовлення 5056 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.38 грн |
| 15+ | 28.95 грн |
| 17+ | 25.65 грн |
| 100+ | 15.91 грн |
| 500+ | 11.77 грн |
| 1000+ | 11.26 грн |
| STTH1212D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
на замовлення 633 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 90.25 грн |
| 10+ | 65.52 грн |
| 50+ | 35.55 грн |
| STTH1R04A |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
на замовлення 1965 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 55+ | 7.79 грн |
| 57+ | 7.45 грн |
| 100+ | 7.03 грн |
| 125+ | 6.94 грн |
| 500+ | 6.52 грн |
| 1000+ | 6.18 грн |
| ST25DV04K-JFR6D3 |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 30000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 50.32 грн |
| ST25DV64KC-JF8D3 |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 90.25 грн |


























