Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (131480) > Сторінка 2191 з 2192
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| STW27N60M2-EP | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 33nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM32MP257CAI3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257DAL3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257DAK3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: CAN; Ethernet; I2C; I2S Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| STM32MP257FAL3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit Type of integrated circuit: ARM microprocessor Mounting: SMD Interface: I2C; SPI Operating temperature: -40...125°C Kind of core: 32-bit |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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PM8803TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP20 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8805TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: VFQFPN43 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PM8800A | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP16 Mounting: SMD Kind of package: tube Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PM8800ATR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP16 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8801 | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP24 Mounting: SMD Kind of package: tube Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PM8803 | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: HTSSOP20 Mounting: SMD Kind of package: tube Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PM8804TR | STMicroelectronics |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16 Type of integrated circuit: Ethernet interface Kind of integrated circuit: power controller Interface: PoE Ethernet Case: VFQFPN16 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TDA7265 | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier Type of integrated circuit: audio amplifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB30NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD Technology: SuperMesh™ Drain current: 25A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 45mΩ Mounting: SMD Power dissipation: 115W Polarisation: unipolar Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP30NF20 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3 Technology: STripFET™ Drain current: 19A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 75mΩ Mounting: THT Power dissipation: 125W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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STP13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STFU13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STF15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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STW15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP127 | STMicroelectronics |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 65W |
на замовлення 196 шт: термін постачання 14-30 дні (днів) |
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STTH16L06CFP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220FPAB Kind of package: tube Max. forward voltage: 1.05V Reverse recovery time: 35ns |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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STTH16L06CT | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH16L06CTY | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH3R06U | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 3A Case: SMB Max. forward voltage: 1V Max. forward impulse current: 45A Reverse recovery time: 35ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
на замовлення 5056 шт: термін постачання 14-30 дні (днів) |
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STTH1212D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 1.25V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 50ns |
на замовлення 633 шт: термін постачання 14-30 дні (днів) |
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STTH1R04A | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A Semiconductor structure: single diode Max. off-state voltage: 0.4kV Load current: 1A Case: SMA Max. forward voltage: 0.9V Max. forward impulse current: 30A Reverse recovery time: 14ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
на замовлення 1965 шт: термін постачання 14-30 дні (днів) |
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| ST25DV04K-JFR6D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
на замовлення 30000 шт: термін постачання 14-30 дні (днів) |
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| ST25DV64KC-JF8D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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STM32L412K8T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: LQFP32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Family: STM32L4 Kind of core: 32-bit Number of comparators: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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M48T37V-10MH1F | STMicroelectronics |
Category: RTC circuits Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Type of integrated circuit: RTC circuit Kind of integrated circuit: timer/calendar Mounting: SMD Case: BSSOP44 Trade name: TIMEKEEPER® Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 256kb SRAM Interface: parallel Operating voltage: 3...3.6V Kind of memory: NV SRAM |
товару немає в наявності |
Мінімальне замовлення: 936 шт В кошику од. на суму грн. | ||||||||||||||
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M48T35AV-10MH1F | STMicroelectronics |
Category: RTC circuits Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Type of integrated circuit: RTC circuit Kind of integrated circuit: timer/calendar Mounting: SMD Case: SOH28 Trade name: TIMEKEEPER® Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 256kb SRAM Interface: parallel Operating voltage: 3...3.6V Kind of memory: NV SRAM |
товару немає в наявності |
Мінімальне замовлення: 936 шт В кошику од. на суму грн. | ||||||||||||||
| VN5E010MHTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: HPAK On-state resistance: 10mΩ Active logical level: high |
на замовлення 40000 шт: термін постачання 14-30 дні (днів) |
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ESDLIN03-1BWY | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323 Mounting: SMD Case: SOT323 Max. forward impulse current: 3.7A Peak pulse power dissipation: 0.25kW Version: ESD Application: automotive industry Max. off-state voltage: 26.5V Semiconductor structure: bidirectional Leakage current: 50nA Capacitance: 3.5pF Type of diode: TVS Breakdown voltage: 28.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH1210DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220ACIns; tube; 48ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 80A Case: TO220ACIns Kind of package: tube Max. forward voltage: 1.3V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 48ns |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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STTH1210D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220AC; tube; 48ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 80A Case: TO220AC Kind of package: tube Max. forward voltage: 1.3V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 48ns |
на замовлення 204 шт: термін постачання 14-30 дні (днів) |
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STTH12010TV1 | STMicroelectronics |
 Category: Diode modulesDescription: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw Max. off-state voltage: 1kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 750A Case: ISOTOP Max. forward voltage: 1.3V Max. load current: 150A Reverse recovery time: 49ns Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH12T06DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 90A; TO220ACIns; tube; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 90A Case: TO220ACIns Kind of package: tube Max. forward voltage: 2.05V Max. load current: 65A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 23ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STTH12S06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 100A; TO220FPAC; tube; 14ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 100A Case: TO220FPAC Kind of package: tube Max. forward voltage: 3.4V Reverse recovery time: 14ns Leakage current: 30µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STPS15L45CB | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; tube Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.4V Max. load current: 10A Max. forward impulse current: 75A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15L45CBY-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.52V Max. load current: 15A Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| SPSGRFC-868 | STMicroelectronics |
Category: RF modules Description: U.FL; GFSK,GMSK,OOK; 868MHz; SPI; -118dBm; 11.6dBm; SMD; 500kbps Kind of antenna: u.FL Kind of modulation: GFSK; GMSK; OOK Frequency: 868MHz Interface: SPI Receiver sensitivity: -118dBm Transmitter output power: 11.6dBm Mounting: SMD Communications modules features: antenna Data transfer rate: 500kbps Operating temperature: -40...85°C |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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LF18ABDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; DPAK; SMD Mounting: SMD Tolerance: ±1% Operating temperature: -40...125°C Output voltage: 1.8V Kind of package: reel; tape Case: DPAK Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LFXX Input voltage: 2.5...16V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LF18ABPT-TR | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; PPAK; SMD Mounting: SMD Tolerance: ±1% Operating temperature: -40...125°C Output voltage: 1.8V Kind of package: reel; tape Case: PPAK Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LFXX Input voltage: 2.5...16V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.45V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STD4NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 80W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1548 шт: термін постачання 14-30 дні (днів) |
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STL50DN6F7 | STMicroelectronics |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 57A Pulsed drain current: 228A Power dissipation: 62.5W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2862 шт: термін постачання 14-30 дні (днів) |
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| STM8S105S6T6C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K4T3C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K6T3C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105C4T3 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105C4T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105C4T6TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K4T3CTR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K4T6CTR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K6T3CTR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K6U6A | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; VFQFPN32; 3÷5.5VDC; PWM: 4; STM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105K6U6ATR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; 3÷5.5VDC; PWM: 4; STM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105S4T6CTR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM8S105S6T3C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. |
| STW27N60M2-EP |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 80A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 33nC
товару немає в наявності
В кошику
од. на суму грн.
| STM32MP257CAI3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1854.25 грн |
| STM32MP257DAL3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1427.61 грн |
| STM32MP257DAK3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1566.18 грн |
| STM32MP257FAL3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1494.16 грн |
| PM8803TR |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8805TR |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8800A |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8800ATR |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8801 |
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8803 |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| PM8804TR |
|
Виробник: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| TDA7265 |
|
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
товару немає в наявності
В кошику
од. на суму грн.
| STB30NF10T4 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Technology: SuperMesh™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 45mΩ
Mounting: SMD
Power dissipation: 115W
Polarisation: unipolar
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Technology: SuperMesh™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 45mΩ
Mounting: SMD
Power dissipation: 115W
Polarisation: unipolar
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| STP30NF20 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Technology: STripFET™
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Technology: STripFET™
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| STW13N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 359.18 грн |
| 10+ | 224.33 грн |
| STP13N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.69 грн |
| 3+ | 231.94 грн |
| 10+ | 187.08 грн |
| STB13N80K5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STFU13N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STF15N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.40 грн |
| 3+ | 243.80 грн |
| 10+ | 201.47 грн |
| STW15N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| TIP127 |
|
Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.26 грн |
| 10+ | 42.75 грн |
| 50+ | 31.15 грн |
| 100+ | 27.17 грн |
| STTH16L06CFP |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.98 грн |
| 5+ | 117.67 грн |
| 10+ | 103.27 грн |
| 25+ | 87.19 грн |
| 50+ | 85.50 грн |
| STTH16L06CT |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
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| STTH16L06CTY |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
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| STTH3R06U |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
на замовлення 5056 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.38 грн |
| 15+ | 28.95 грн |
| 17+ | 25.65 грн |
| 100+ | 15.91 грн |
| 500+ | 11.77 грн |
| 1000+ | 11.26 грн |
| STTH1212D |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
на замовлення 633 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 90.25 грн |
| 10+ | 65.52 грн |
| 50+ | 35.55 грн |
| STTH1R04A |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
на замовлення 1965 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 55+ | 7.79 грн |
| 57+ | 7.45 грн |
| 100+ | 7.03 грн |
| 125+ | 6.94 грн |
| 500+ | 6.52 грн |
| 1000+ | 6.18 грн |
| ST25DV04K-JFR6D3 |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 30000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 50.60 грн |
| ST25DV64KC-JF8D3 |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 90.25 грн |
| STM32L412K8T6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 1
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| M48T37V-10MH1F |
|
Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
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Мінімальне замовлення: 936 шт
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| M48T35AV-10MH1F |
|
Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: SOH28
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: SOH28
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
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Мінімальне замовлення: 936 шт
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| VN5E010MHTR-E |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
на замовлення 40000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 202.38 грн |
| ESDLIN03-1BWY |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
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| STTH1210DI |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220ACIns; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220ACIns; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.19 грн |
| 10+ | 79.83 грн |
| 50+ | 49.10 грн |
| 100+ | 44.44 грн |
| STTH1210D |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220AC; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220AC; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
на замовлення 204 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.66 грн |
| 50+ | 79.57 грн |
| STTH12010TV1 |
|
Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 750A
Case: ISOTOP
Max. forward voltage: 1.3V
Max. load current: 150A
Reverse recovery time: 49ns
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 750A
Case: ISOTOP
Max. forward voltage: 1.3V
Max. load current: 150A
Reverse recovery time: 49ns
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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| STTH12T06DI |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 90A; TO220ACIns; tube; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.05V
Max. load current: 65A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 23ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 90A; TO220ACIns; tube; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.05V
Max. load current: 65A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 23ns
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| STTH12S06FP |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 100A; TO220FPAC; tube; 14ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 3.4V
Reverse recovery time: 14ns
Leakage current: 30µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 100A; TO220FPAC; tube; 14ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 3.4V
Reverse recovery time: 14ns
Leakage current: 30µA
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| STPS15L45CB |
|
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. load current: 10A
Max. forward impulse current: 75A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. load current: 10A
Max. forward impulse current: 75A
Kind of package: tube
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| STPS15L45CBY-TR |
|
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. load current: 15A
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. load current: 15A
Max. forward impulse current: 75A
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| SPSGRFC-868 |
Виробник: STMicroelectronics
Category: RF modules
Description: U.FL; GFSK,GMSK,OOK; 868MHz; SPI; -118dBm; 11.6dBm; SMD; 500kbps
Kind of antenna: u.FL
Kind of modulation: GFSK; GMSK; OOK
Frequency: 868MHz
Interface: SPI
Receiver sensitivity: -118dBm
Transmitter output power: 11.6dBm
Mounting: SMD
Communications modules features: antenna
Data transfer rate: 500kbps
Operating temperature: -40...85°C
Category: RF modules
Description: U.FL; GFSK,GMSK,OOK; 868MHz; SPI; -118dBm; 11.6dBm; SMD; 500kbps
Kind of antenna: u.FL
Kind of modulation: GFSK; GMSK; OOK
Frequency: 868MHz
Interface: SPI
Receiver sensitivity: -118dBm
Transmitter output power: 11.6dBm
Mounting: SMD
Communications modules features: antenna
Data transfer rate: 500kbps
Operating temperature: -40...85°C
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 144+ | 1051.11 грн |
| LF18ABDT-TR |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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| LF18ABPT-TR |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; PPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; PPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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| STD4NK80ZT4 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1548 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 182.33 грн |
| 10+ | 112.59 грн |
| 20+ | 99.04 грн |
| 100+ | 76.19 грн |
| 200+ | 68.57 грн |
| 500+ | 60.10 грн |
| 1000+ | 55.87 грн |
| STL50DN6F7 |
|
Виробник: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2862 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.10 грн |
| 10+ | 63.32 грн |
| 100+ | 46.90 грн |
| 500+ | 41.31 грн |
| STM8S105S6T6C |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K4T3C |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K6T3C |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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| STM8S105C4T3 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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| STM8S105C4T6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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| STM8S105C4T6TR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K4T3CTR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K4T6CTR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K6T3CTR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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| STM8S105K6U6A |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; VFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; VFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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| STM8S105K6U6ATR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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| STM8S105S4T6CTR |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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| STM8S105S6T3C |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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од. на суму грн.