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SMDJ15AHR7G SMDJ15AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ15A V6G SMDJ15A V6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 15V 24.4V DO214AB
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SMDJ15A V7G SMDJ15A V7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15A M6G SMDJ15A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15AHM6G SMDJ15AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB220A M4G P6SMB220A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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P6SMB220AHM4G P6SMB220AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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P6SMB220A R5G P6SMB220A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB220AHR5G P6SMB220AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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TSM60NB190CZ C0G TSM60NB190CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)
2+290.61 грн
50+221.69 грн
100+190.03 грн
500+158.51 грн
1000+135.73 грн
2000+127.80 грн
Мінімальне замовлення: 2
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TSM60NB190CI C0G TSM60NB190CI C0G Taiwan Semiconductor Corporation TSM60NB190_D1608.pdf Description: MOSFET N-CH 600V 18A ITO220AB
на замовлення 3904 шт:
термін постачання 21-31 дні (днів)
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TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
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TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
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TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
3000+12.66 грн
6000+11.51 грн
Мінімальне замовлення: 3000
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TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 73288 шт:
термін постачання 21-31 дні (днів)
6+61.39 грн
10+36.89 грн
100+23.95 грн
500+17.27 грн
1000+15.59 грн
Мінімальне замовлення: 6
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TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
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TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
5+67.60 грн
10+52.98 грн
Мінімальне замовлення: 5
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TSM5NC50CZ C0G TSM5NC50CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
4+100.24 грн
10+79.02 грн
100+61.49 грн
500+48.91 грн
Мінімальне замовлення: 4
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TSM500N03CP ROG TSM500N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
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SA30CA R0G SA30CA R0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 30VWM 64.3VC DO204AC
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S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
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SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ9.0CA M2G SMAJ9.0CA M2G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 9V 15.4V DO214AC
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1PGSMC5354HR7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
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1PGSMC5354 R7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
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TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation Description: IC LED DRVR OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 450V
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TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation Description: IC LED DRVR OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 450V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
3+154.63 грн
10+133.86 грн
25+126.31 грн
100+101.00 грн
250+94.83 грн
Мінімальне замовлення: 3
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TS19603CS RLG TS19603CS RLG Taiwan Semiconductor Corporation Description: IC LED DRIVER LINEAR 400MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 12V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOP-EP
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 50V
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P4KE130CA R0G P4KE130CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
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P4KE130CAHR0G P4KE130CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
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P6KE130CA R0G P6KE130CA R0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE130CAHR0G P6KE130CAHR0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
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TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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TST30H120CW C0G TST30H120CW C0G Taiwan Semiconductor Corporation TST30H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 120V 15A TO220AB
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TSF30H120C C0G TSF30H120C C0G Taiwan Semiconductor Corporation TSF30H100C%20SERIES%20_G14.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
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P6KE39A R0G P6KE39A R0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6KE39AHR0G P6KE39AHR0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
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P6KE39A A0G P6KE39A A0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE39AHA0G P6KE39AHA0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6KE39A B0G P6KE39A B0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE39AHB0G P6KE39AHB0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TSM60N380CZ C0G TSM60N380CZ C0G Taiwan Semiconductor Corporation TSM60N380CZ_A1607.pdf Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+166.29 грн
10+132.89 грн
100+105.74 грн
500+83.97 грн
1000+71.25 грн
2000+67.68 грн
Мінімальне замовлення: 2
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TSM600P03CS RLG TSM600P03CS RLG Taiwan Semiconductor Corporation TSM600P03CS_B1612.pdf Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
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TSM600P03CS RLG TSM600P03CS RLG Taiwan Semiconductor Corporation TSM600P03CS_B1612.pdf Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
8+39.63 грн
13+23.79 грн
100+20.16 грн
500+14.61 грн
1000+11.36 грн
Мінімальне замовлення: 8
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S2A M4G S2A M4G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
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TS4148C RZG TS4148C RZG Taiwan Semiconductor Corporation TS4148C_G1809.pdf Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
5000+3.51 грн
10000+2.87 грн
25000+2.70 грн
50000+2.38 грн
Мінімальне замовлення: 5000
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TS4148C RZG TS4148C RZG Taiwan Semiconductor Corporation TS4148C_G1809.pdf Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 92223 шт:
термін постачання 21-31 дні (днів)
14+23.31 грн
17+18.11 грн
100+9.62 грн
500+5.94 грн
1000+4.04 грн
2000+3.64 грн
Мінімальне замовлення: 14
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1PGSMA4740HM2G 1PGSMA4740HM2G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE, ZENER, 10V
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RS3M R7G RS3M R7G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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RS3MHR7G RS3MHR7G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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RS3M V6G RS3M V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 3A DO214AB
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RS3M V7G RS3M V7G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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RS3M M6G RS3M M6G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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RS3MHM6G RS3MHM6G Taiwan Semiconductor Corporation RS3A%20Thru%20RS3M.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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5.0SMDJ64A M6G 5.0SMDJ64A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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SMDJ15AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ15AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ15A V6G SMDJ%20SERIES_E1708.pdf
SMDJ15A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
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SMDJ15A V7G SMDJ%20SERIES_I2104.pdf
SMDJ15A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15A M6G SMDJ%20SERIES_I2104.pdf
SMDJ15A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ15AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB220A M4G P6SMB%20SERIES_N1701.pdf
P6SMB220A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
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P6SMB220AHM4G P6SMB%20SERIES_N1701.pdf
P6SMB220AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
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P6SMB220A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB220A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB220AHR5G P6SMB%20SERIES_N1701.pdf
P6SMB220AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
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TSM60NB190CZ C0G
TSM60NB190CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+290.61 грн
50+221.69 грн
100+190.03 грн
500+158.51 грн
1000+135.73 грн
2000+127.80 грн
Мінімальне замовлення: 2
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TSM60NB190CI C0G TSM60NB190_D1608.pdf
TSM60NB190CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220AB
на замовлення 3904 шт:
термін постачання 21-31 дні (днів)
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TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
товару немає в наявності
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TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
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TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.66 грн
6000+11.51 грн
Мінімальне замовлення: 3000
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TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 73288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.39 грн
10+36.89 грн
100+23.95 грн
500+17.27 грн
1000+15.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TSM5NC50CP ROG
TSM5NC50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
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TSM5NC50CP ROG
TSM5NC50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.60 грн
10+52.98 грн
Мінімальне замовлення: 5
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TSM5NC50CZ C0G
TSM5NC50CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.24 грн
10+79.02 грн
100+61.49 грн
500+48.91 грн
Мінімальне замовлення: 4
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TSM500N03CP ROG
TSM500N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
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SA30CA R0G SA%20SERIES_L2105.pdf
SA30CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
товару немає в наявності
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S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
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S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
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SMAJ9.0CAHR3G
SMAJ9.0CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ9.0CAHR3G
SMAJ9.0CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ9.0CA M2G SMAJ%20SERIES_S1901.pdf
SMAJ9.0CA M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AC
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1PGSMC5354HR7G 1PGSMC5348%20SERIES_B1805.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
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1PGSMC5354 R7G 1PGSMC5348%20SERIES_B1805.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
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TS19450CS RLG
TS19450CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 450V
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TS19450CS RLG
TS19450CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 450V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.63 грн
10+133.86 грн
25+126.31 грн
100+101.00 грн
250+94.83 грн
Мінімальне замовлення: 3
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TS19603CS RLG
TS19603CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER LINEAR 400MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 12V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOP-EP
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 50V
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P4KE130CA R0G P4KE%20SERIES_M1602.pdf
P4KE130CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
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P4KE130CAHR0G P4KE%20SERIES_M1602.pdf
P4KE130CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
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P6KE130CA R0G P6KE%20SERIES_P2203.pdf
P6KE130CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE130CAHR0G P6KE%20SERIES_O2109.pdf
P6KE130CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
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TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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TST30H120CW C0G TST30H100CW%20SERIES_E14.pdf
TST30H120CW C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO220AB
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TSF30H120C C0G TSF30H100C%20SERIES%20_G14.pdf
TSF30H120C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
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P6KE39A R0G P6KE%20SERIES_P2203.pdf
P6KE39A R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6KE39AHR0G P6KE%20SERIES_O2109.pdf
P6KE39AHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
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P6KE39A A0G P6KE%20SERIES_P2203.pdf
P6KE39A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE39AHA0G P6KE%20SERIES_P2203.pdf
P6KE39AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6KE39A B0G P6KE%20SERIES_P2203.pdf
P6KE39A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE39AHB0G P6KE%20SERIES_P2203.pdf
P6KE39AHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TSM60N380CZ C0G TSM60N380CZ_A1607.pdf
TSM60N380CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.29 грн
10+132.89 грн
100+105.74 грн
500+83.97 грн
1000+71.25 грн
2000+67.68 грн
Мінімальне замовлення: 2
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TSM600P03CS RLG TSM600P03CS_B1612.pdf
TSM600P03CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
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TSM600P03CS RLG TSM600P03CS_B1612.pdf
TSM600P03CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.63 грн
13+23.79 грн
100+20.16 грн
500+14.61 грн
1000+11.36 грн
Мінімальне замовлення: 8
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S2A M4G S2A%20SERIES_N2102.pdf
S2A M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
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TS4148C RZG TS4148C_G1809.pdf
TS4148C RZG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.51 грн
10000+2.87 грн
25000+2.70 грн
50000+2.38 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TS4148C RZG TS4148C_G1809.pdf
TS4148C RZG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 92223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.31 грн
17+18.11 грн
100+9.62 грн
500+5.94 грн
1000+4.04 грн
2000+3.64 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
1PGSMA4740HM2G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4740HM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 10V
товару немає в наявності
В кошику  од. на суму  грн.
RS3M R7G RS3A%20Thru%20RS3M.pdf
RS3M R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
RS3MHR7G RS3A%20Thru%20RS3M.pdf
RS3MHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RS3M V6G RS3A%20SERIES_J1708.pdf
RS3M V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
RS3M V7G RS3A%20Thru%20RS3M.pdf
RS3M V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
RS3M M6G RS3A%20Thru%20RS3M.pdf
RS3M M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
RS3MHM6G RS3A%20Thru%20RS3M.pdf
RS3MHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
5.0SMDJ64A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ64A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
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