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TSM60NB190CZ C0G TSM60NB190CZ C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB190CZ Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)
2+179.86 грн
10+ 143.76 грн
100+ 114.45 грн
500+ 90.89 грн
1000+ 77.12 грн
2000+ 73.26 грн
Мінімальне замовлення: 2
TSM60NB190CI C0G TSM60NB190CI C0G Taiwan Semiconductor Corporation TSM60NB190_D1608.pdf Description: MOSFET N-CH 600V 18A ITO220AB
на замовлення 3904 шт:
термін постачання 21-31 дні (днів)
TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
товар відсутній
TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
3000+31.05 грн
6000+ 28.48 грн
9000+ 27.16 грн
Мінімальне замовлення: 3000
TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 80721 шт:
термін постачання 21-31 дні (днів)
4+75.36 грн
10+ 59.15 грн
100+ 46 грн
500+ 36.59 грн
1000+ 29.81 грн
Мінімальне замовлення: 4
TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
товар відсутній
TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
5+61.85 грн
10+ 48.47 грн
Мінімальне замовлення: 5
TSM5NC50CZ C0G TSM5NC50CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
4+91.71 грн
10+ 72.29 грн
100+ 56.26 грн
500+ 44.75 грн
Мінімальне замовлення: 4
TSM500N03CP ROG TSM500N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
TSM500N03CP ROG TSM500N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
SA30CA R0G SA30CA R0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 30VWM 64.3VC DO204AC
товар відсутній
S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
товар відсутній
S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 2222 шт:
термін постачання 21-31 дні (днів)
10+28.44 грн
14+ 20.95 грн
100+ 12.57 грн
500+ 10.92 грн
Мінімальне замовлення: 10
SMAJ9.0CA M2G SMAJ9.0CA M2G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 9V 15.4V DO214AC
товар відсутній
1PGSMC5354HR7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
1PGSMC5354 R7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation TS19450_B15.pdf Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation TS19450_B15.pdf Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)
TS19603CS RLG TS19603CS RLG Taiwan Semiconductor Corporation TS19603_A13.pdf Description: IC LED DRVR LINEAR 8SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
TS19603CS RLG TS19603CS RLG Taiwan Semiconductor Corporation TS19603_A13.pdf Description: IC LED DRVR LINEAR 8SOP
на замовлення 4778 шт:
термін постачання 21-31 дні (днів)
P4KE130CA R0G P4KE130CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
товар відсутній
P4KE130CAHR0G P4KE130CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
товар відсутній
P6KE130CA R0G P6KE130CA R0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
товар відсутній
P6KE130CAHR0G P6KE130CAHR0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
товар відсутній
TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
TST30H120CW C0G TST30H120CW C0G Taiwan Semiconductor Corporation TST30H100CW%20SERIES_E14.pdf Description: DIODE SCHOTTKY 120V 15A TO220AB
товар відсутній
TSF30H120C C0G TSF30H120C C0G Taiwan Semiconductor Corporation TSF30H100C%20SERIES%20_G14.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
товар відсутній
P6KE39A R0G P6KE39A R0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
P6KE39AHR0G P6KE39AHR0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
товар відсутній
P6KE39A A0G P6KE39A A0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE39AHA0G P6KE39AHA0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
P6KE39A B0G P6KE39A B0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE39AHB0G P6KE39AHB0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
TSM60N380CZ C0G TSM60N380CZ C0G Taiwan Semiconductor Corporation TSM60N380CZ_A1607.pdf Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+152.13 грн
10+ 121.58 грн
100+ 96.74 грн
500+ 76.82 грн
1000+ 65.18 грн
2000+ 61.92 грн
Мінімальне замовлення: 2
TSM600P03CS RLG TSM600P03CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM600P03CS Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
товар відсутній
TSM600P03CS RLG TSM600P03CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM600P03CS Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
10+30.57 грн
12+ 24.78 грн
100+ 17.22 грн
500+ 12.62 грн
1000+ 10.26 грн
Мінімальне замовлення: 10
S2A M4G S2A M4G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
TS4148C RZG TS4148C RZG Taiwan Semiconductor Corporation TS4148C_G1809.pdf Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
5000+3.21 грн
10000+ 2.63 грн
25000+ 2.47 грн
50000+ 2.17 грн
Мінімальне замовлення: 5000
TS4148C RZG TS4148C RZG Taiwan Semiconductor Corporation TS4148C_G1809.pdf Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 92223 шт:
термін постачання 21-31 дні (днів)
14+21.33 грн
17+ 16.57 грн
100+ 8.8 грн
500+ 5.43 грн
1000+ 3.7 грн
2000+ 3.33 грн
Мінімальне замовлення: 14
1PGSMA4740HM2G 1PGSMA4740HM2G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE, ZENER, 10V
товар відсутній
RS3M R7G RS3M R7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3MHR7G RS3MHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
RS3M V6G RS3M V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 3A DO214AB
товар відсутній
RS3M V7G RS3M V7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3M M6G RS3M M6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3MHM6G RS3MHM6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
5.0SMDJ64A M6G 5.0SMDJ64A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5.0SMDJ64A M6G 5.0SMDJ64A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SMA6J16A R3G SMA6J16A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
SMA6J16A R3G SMA6J16A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 8425 шт:
термін постачання 21-31 дні (днів)
BZD27C180PW BZD27C180PW Taiwan Semiconductor Corporation Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товар відсутній
BZD27C180PW BZD27C180PW Taiwan Semiconductor Corporation Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
10+31.28 грн
13+ 21.36 грн
Мінімальне замовлення: 10
BZD27C180PWH BZD27C180PWH Taiwan Semiconductor Corporation Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
товар відсутній
BZD27C180PWH BZD27C180PWH Taiwan Semiconductor Corporation Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
на замовлення 585 шт:
термін постачання 21-31 дні (днів)
9+31.99 грн
13+ 21.84 грн
100+ 11.04 грн
500+ 9.18 грн
Мінімальне замовлення: 9
TSM60NB190CZ C0G pdf.php?pn=TSM60NB190CZ
TSM60NB190CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.86 грн
10+ 143.76 грн
100+ 114.45 грн
500+ 90.89 грн
1000+ 77.12 грн
2000+ 73.26 грн
Мінімальне замовлення: 2
TSM60NB190CI C0G TSM60NB190_D1608.pdf
TSM60NB190CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220AB
на замовлення 3904 шт:
термін постачання 21-31 дні (днів)
TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
товар відсутній
TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+31.05 грн
6000+ 28.48 грн
9000+ 27.16 грн
Мінімальне замовлення: 3000
TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 80721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.36 грн
10+ 59.15 грн
100+ 46 грн
500+ 36.59 грн
1000+ 29.81 грн
Мінімальне замовлення: 4
TSM5NC50CP ROG
TSM5NC50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
товар відсутній
TSM5NC50CP ROG
TSM5NC50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+61.85 грн
10+ 48.47 грн
Мінімальне замовлення: 5
TSM5NC50CZ C0G
TSM5NC50CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+91.71 грн
10+ 72.29 грн
100+ 56.26 грн
500+ 44.75 грн
Мінімальне замовлення: 4
TSM500N03CP ROG
TSM500N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
TSM500N03CP ROG
TSM500N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
SA30CA R0G SA%20SERIES_L2105.pdf
SA30CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
товар відсутній
S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
товар відсутній
S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
SMAJ9.0CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ9.0CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ9.0CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ9.0CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 2222 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+28.44 грн
14+ 20.95 грн
100+ 12.57 грн
500+ 10.92 грн
Мінімальне замовлення: 10
SMAJ9.0CA M2G SMAJ%20SERIES_S1901.pdf
SMAJ9.0CA M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AC
товар відсутній
1PGSMC5354HR7G 1PGSMC5348%20SERIES_B1805.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
1PGSMC5354 R7G 1PGSMC5348%20SERIES_B1805.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
TS19450CS RLG TS19450_B15.pdf
TS19450CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TS19450CS RLG TS19450_B15.pdf
TS19450CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)
TS19603CS RLG TS19603_A13.pdf
TS19603CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR LINEAR 8SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
TS19603CS RLG TS19603_A13.pdf
TS19603CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR LINEAR 8SOP
на замовлення 4778 шт:
термін постачання 21-31 дні (днів)
P4KE130CA R0G P4KE%20SERIES_M1602.pdf
P4KE130CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
товар відсутній
P4KE130CAHR0G P4KE%20SERIES_M1602.pdf
P4KE130CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
товар відсутній
P6KE130CA R0G P6KE%20SERIES_O2109.pdf
P6KE130CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
товар відсутній
P6KE130CAHR0G P6KE%20SERIES_O2109.pdf
P6KE130CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
товар відсутній
TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
TST30H120CW C0G TST30H100CW%20SERIES_E14.pdf
TST30H120CW C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO220AB
товар відсутній
TSF30H120C C0G TSF30H100C%20SERIES%20_G14.pdf
TSF30H120C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
товар відсутній
P6KE39A R0G P6KE%20SERIES_P2203.pdf
P6KE39A R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
P6KE39AHR0G P6KE%20SERIES_O2109.pdf
P6KE39AHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
товар відсутній
P6KE39A A0G P6KE%20SERIES_P2203.pdf
P6KE39A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE39AHA0G P6KE%20SERIES_P2203.pdf
P6KE39AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
P6KE39A B0G P6KE%20SERIES_P2203.pdf
P6KE39A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE39AHB0G P6KE%20SERIES_P2203.pdf
P6KE39AHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
TSM60N380CZ C0G TSM60N380CZ_A1607.pdf
TSM60N380CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+152.13 грн
10+ 121.58 грн
100+ 96.74 грн
500+ 76.82 грн
1000+ 65.18 грн
2000+ 61.92 грн
Мінімальне замовлення: 2
TSM600P03CS RLG pdf.php?pn=TSM600P03CS
TSM600P03CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
товар відсутній
TSM600P03CS RLG pdf.php?pn=TSM600P03CS
TSM600P03CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.57 грн
12+ 24.78 грн
100+ 17.22 грн
500+ 12.62 грн
1000+ 10.26 грн
Мінімальне замовлення: 10
S2A M4G S2A%20SERIES_N2102.pdf
S2A M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
TS4148C RZG TS4148C_G1809.pdf
TS4148C RZG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+3.21 грн
10000+ 2.63 грн
25000+ 2.47 грн
50000+ 2.17 грн
Мінімальне замовлення: 5000
TS4148C RZG TS4148C_G1809.pdf
TS4148C RZG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 92223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.33 грн
17+ 16.57 грн
100+ 8.8 грн
500+ 5.43 грн
1000+ 3.7 грн
2000+ 3.33 грн
Мінімальне замовлення: 14
1PGSMA4740HM2G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4740HM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 10V
товар відсутній
RS3M R7G RS3A%20SERIES_L2102.pdf
RS3M R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3MHR7G RS3A%20SERIES_L2102.pdf
RS3MHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
RS3M V6G RS3A%20SERIES_J1708.pdf
RS3M V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
RS3M V7G RS3A%20SERIES_L2102.pdf
RS3M V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3M M6G RS3A%20SERIES_L2102.pdf
RS3M M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
RS3MHM6G RS3A%20SERIES_L2102.pdf
RS3MHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
5.0SMDJ64A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ64A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5.0SMDJ64A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ64A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SMA6J16A R3G SMA6J%20SERIES_E2102.pdf
SMA6J16A R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
SMA6J16A R3G SMA6J%20SERIES_E2102.pdf
SMA6J16A R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 8425 шт:
термін постачання 21-31 дні (днів)
BZD27C180PW
BZD27C180PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товар відсутній
BZD27C180PW
BZD27C180PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.28 грн
13+ 21.36 грн
Мінімальне замовлення: 10
BZD27C180PWH
BZD27C180PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
товар відсутній
BZD27C180PWH
BZD27C180PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
на замовлення 585 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+31.99 грн
13+ 21.84 грн
100+ 11.04 грн
500+ 9.18 грн
Мінімальне замовлення: 9
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