Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22690) > Сторінка 153 з 379
| Фото | Назва | Виробник | Інформація |
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P6SMB22AHM4G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 18.8V 30.6V DO214AA |
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P6SMB22A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8VWM 30.6VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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P6SMB22AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8VWM 30.6VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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BZT55C5V1 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 500MW MINI MELF |
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BZT55C5V1 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 500MW MINI MELF Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
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RYG.jpg "BZY55C5V1 RYG") |
BZY55C5V1 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 500MW 0805 |
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ESH2CA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AC |
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1.5KE7.5AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5KE7.5AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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SMB10J13CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13V 21.5V DO214AA |
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SMB10J13CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13V 21.5V DO214AA |
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SMBJ17A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.8A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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SMBJ17AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AA |
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SMBJ17A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.8A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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SMBJ17A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17VWM 27.6VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.8A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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SMBJ17AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 17V 27.6V DO214AA |
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MBR15100CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
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HER3005PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 400V 30A TO247AD |
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HER3001PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 50V 30A TO247AD |
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HER3002PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 100V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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BZD27C47P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 1W SUB SMA |
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BZD27C47P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 1W SUB SMA |
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BZT55C12 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW MINI MELF Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V |
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SMAJ120CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 120VWM 193VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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SMAJ120CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 120VWM 193VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3568 шт: термін постачання 21-31 дні (днів) |
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SMAJ120CA M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 120VWM 193VC DO214AC |
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SMAJ120CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 120VWM 193VC DO214AC |
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SMAJ120CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 120VWM 193VC DO214AC |
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PGSMAJ45CA E3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AC |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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PGSMAJ45CA E3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AC |
на замовлення 5393 шт: термін постачання 21-31 дні (днів) |
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TSM220NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 8A/35A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSM220NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 8A/35A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V |
на замовлення 3179 шт: термін постачання 21-31 дні (днів) |
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TSSA3U60 R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A DO214AC |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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BZX585B11 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 200MW SOD523F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-523F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 8 V |
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BZX585B11 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 200MW SOD523F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-523F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 8 V |
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RS3B R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB |
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RS3B R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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HS1B M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC |
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P6SMB160A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
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ESH1GM RSG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A MICRO SMA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ESH1GM RSG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A MICRO SMA |
на замовлення 13999 шт: термін постачання 21-31 дні (днів) |
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.jpg "TSM60N380CP ROG") |
TSM60N380CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 11A TO252 |
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TSM60N380CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 11A TO252 |
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BZT52B39-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 410MW SOD123 |
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BZV55B4V3 L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 500MW MINI MELF |
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P4SMA22CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8V 30.6V DO214AC |
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P4SMA22CAHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8V 30.6V DO214AC |
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RSFML RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 500MA SUB SMA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSFML RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 500MA SUB SMA |
на замовлення 1521 шт: термін постачання 21-31 дні (днів) |
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S10KC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 10A DO214AB |
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S10KC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 10A DO214AB |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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S10JCHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
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S10JCHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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S10JC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
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S10JC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A DO214AB |
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SA30CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SA30CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SA30CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC |
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| P6SMB22AHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AA
Description: TVS DIODE 18.8V 30.6V DO214AA
товар відсутній
| P6SMB22A R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| P6SMB22AHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 18.8VWM 30.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| BZT55C5V1 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW MINI MELF
Description: DIODE ZENER 5.1V 500MW MINI MELF
товар відсутній
| BZT55C5V1 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 5.1V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
| BZY55C5V1 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW 0805
Description: DIODE ZENER 5.1V 500MW 0805
товар відсутній
| ESH2CA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
товар відсутній
| 1.5KE7.5AHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1.5KE7.5AHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SMB10J13CA R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13V 21.5V DO214AA
Description: TVS DIODE 13V 21.5V DO214AA
товар відсутній
| SMB10J13CA R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13V 21.5V DO214AA
Description: TVS DIODE 13V 21.5V DO214AA
товар відсутній
| SMBJ17A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| SMBJ17AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AA
Description: TVS DIODE 17VWM 27.6VC DO214AA
товар відсутній
| SMBJ17A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| SMBJ17A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 17VWM 27.6VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.8A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| SMBJ17AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17V 27.6V DO214AA
Description: TVS DIODE 17V 27.6V DO214AA
товар відсутній
| MBR15100CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
товар відсутній
| HER3005PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 30A TO247AD
Description: DIODE ARRAY GP 400V 30A TO247AD
товар відсутній
| HER3001PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 30A TO247AD
Description: DIODE ARRAY GP 50V 30A TO247AD
товар відсутній
| HER3002PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE ARRAY GP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| BZD27C47P RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1W SUB SMA
Description: DIODE ZENER 47V 1W SUB SMA
товар відсутній
| BZD27C47P RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1W SUB SMA
Description: DIODE ZENER 47V 1W SUB SMA
товар відсутній
| BZT55C12 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Description: DIODE ZENER 12V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
товар відсутній
| SMAJ120CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| SMAJ120CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 120VWM 193VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3568 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.65 грн |
| 11+ | 25.19 грн |
| 100+ | 17.5 грн |
| 500+ | 12.82 грн |
| SMAJ120CA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 120VWM 193VC DO214AC
Description: TVS DIODE 120VWM 193VC DO214AC
товар відсутній
| SMAJ120CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 120VWM 193VC DO214AC
Description: TVS DIODE 120VWM 193VC DO214AC
товар відсутній
| SMAJ120CAHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 120VWM 193VC DO214AC
Description: TVS DIODE 120VWM 193VC DO214AC
товар відсутній
| PGSMAJ45CA E3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AC
Description: TVS DIODE 45VWM 72.7VC DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 8.69 грн |
| 3600+ | 7.67 грн |
| PGSMAJ45CA E3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AC
Description: TVS DIODE 45VWM 72.7VC DO214AC
на замовлення 5393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.51 грн |
| 13+ | 21.82 грн |
| 100+ | 14.88 грн |
| 500+ | 10.47 грн |
| TSM220NB06LCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 19.95 грн |
| TSM220NB06LCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
на замовлення 3179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.74 грн |
| 10+ | 43.85 грн |
| 100+ | 30.33 грн |
| 500+ | 23.79 грн |
| 1000+ | 20.24 грн |
| TSSA3U60 R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AC
Description: DIODE SCHOTTKY 60V 3A DO214AC
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)| BZX585B11 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Description: DIODE ZENER 11V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
| BZX585B11 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Description: DIODE ZENER 11V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
| RS3B R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Description: DIODE GEN PURP 100V 3A DO214AB
товар відсутній
| RS3B R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Description: DIODE GEN PURP 100V 3A DO214AB
на замовлення 590 шт:
термін постачання 21-31 дні (днів)| HS1B M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
| P6SMB160A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
товар відсутній
| ESH1GM RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.26 грн |
| 6000+ | 7.47 грн |
| ESH1GM RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
на замовлення 13999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.22 грн |
| 13+ | 22.65 грн |
| 100+ | 15.41 грн |
| 500+ | 10.85 грн |
| 1000+ | 8.14 грн |
| TSM60N380CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO252
Description: MOSFET N-CHANNEL 600V 11A TO252
товар відсутній
| TSM60N380CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO252
Description: MOSFET N-CHANNEL 600V 11A TO252
товар відсутній
| BZT52B39-G RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 410MW SOD123
Description: DIODE ZENER 39V 410MW SOD123
товар відсутній
| BZV55B4V3 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW MINI MELF
Description: DIODE ZENER 4.3V 500MW MINI MELF
товар відсутній
| P4SMA22CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
товар відсутній
| P4SMA22CAHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
товар відсутній
| RSFML RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 500MA SUB SMA
Description: DIODE GEN PURP 1KV 500MA SUB SMA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| RSFML RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 500MA SUB SMA
Description: DIODE GEN PURP 1KV 500MA SUB SMA
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)| S10KC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Description: DIODE GEN PURP 800V 10A DO214AB
товар відсутній
| S10KC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Description: DIODE GEN PURP 800V 10A DO214AB
на замовлення 582 шт:
термін постачання 21-31 дні (днів)| S10JCHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
| S10JCHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
на замовлення 130 шт:
термін постачання 21-31 дні (днів)| S10MC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| S10MC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| S10JC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
| S10JC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
| SA30CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| SA30CA B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| SA30CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Description: TVS DIODE 30VWM 64.3VC DO204AC
товар відсутній