Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22305) > Сторінка 157 з 372
Фото | Назва | Виробник | Інформація |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
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HS1FFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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HS1FFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 8004 шт: термін постачання 21-31 дні (днів) |
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HERAF1606G C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 16A ITO220AC |
на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
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SSL13 M2G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 30V 1A DO214AC |
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P4SMA110AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94V 152V DO214AC |
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P4SMA11AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
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1SMA110Z M2G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 1.25W DO214AC |
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1PGSMA110ZHM2G | Taiwan Semiconductor Corporation | Description: DIODE, ZENER, 110V |
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1SMA110Z R3G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 1.25W DO214AC |
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P4SMA110CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94V 152V DO214AC |
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P4SMA11CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
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P4SMA110A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94V 152V DO214AC |
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P4SMA11A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
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P4SMA110AHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94V 152V DO214AC |
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P4SMA11AHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
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1SMA110ZHM2G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 1.25W DO214AC |
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P4SMA110A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94VWM 152VC DO214AC |
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P4SMA11A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
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1PGSMA110Z M2G | Taiwan Semiconductor Corporation | Description: DIODE, ZENER, 110V |
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BZX55B10 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 10V 500MW DO35 |
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MTZJ2V7SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.65V 500MW DO34 |
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TSF10H45C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 45V ITO220AB |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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SMCJ170A V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 170V 275V DO214AB |
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SMCJ170A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 170V 275V DO214AB |
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SMCJ170A V7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 170V 275V DO214AB |
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SMCJ170AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 170V 275V DO214AB |
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BZD27C150PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BZD27C150PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V |
на замовлення 36776 шт: термін постачання 21-31 дні (днів) |
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BZD27C150PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BZD27C150PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 150V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7661 шт: термін постачання 21-31 дні (днів) |
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BZD27C110PW | Taiwan Semiconductor Corporation | Description: SOD123W 1000MW 5% ZENER DIODE |
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BZD27C110PW | Taiwan Semiconductor Corporation | Description: SOD123W 1000MW 5% ZENER DIODE |
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BZD27C110PWH | Taiwan Semiconductor Corporation | Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN |
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BZD27C110PWH | Taiwan Semiconductor Corporation | Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN |
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1SMB5950 M4G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 3W DO214AA |
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1SMB5950 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 110V 3W DO214AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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1SMB5950HM4G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 3W DO214AA |
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1SMB5950HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 110V 3W DO214AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V |
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1PGSMB5950 R5G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 3W DO214AA |
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1PGSMB5950HR5G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 3W DO214AA |
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TSP10U60S S1G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 60V 10A TO277A |
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BZV55B4V3 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.3V 500MW MINI MELF |
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1.5SMC22A V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22A V7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8VWM 30.6VC DO214AB |
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1.5SMC22AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22CA V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22CA M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8VWM 30.6VC DO214AB |
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1.5SMC22CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8VWM 30.6VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 51A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5SMC22CA R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AB |
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1.5SMC22CAHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8VWM 30.6VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 51A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5SMC22CAHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 18.8VWM 30.6VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 51A Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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HS5G R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
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HS5G R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 5A DO214AB |
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HS5F R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 5A DO214AB |
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HS5F R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 5A DO214AB |
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TSM650N15CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
товар відсутній
TSM650N15CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
товар відсутній
HS1FFL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HS1FFL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 8004 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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10+ | 29.4 грн |
13+ | 21.34 грн |
100+ | 13.3 грн |
500+ | 8.54 грн |
1000+ | 6.57 грн |
2000+ | 5.91 грн |
5000+ | 5.49 грн |
HERAF1606G C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Description: DIODE GEN PURP 600V 16A ITO220AC
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)SSL13 M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Description: DIODE SCHOTTKY 30V 1A DO214AC
товар відсутній
P4SMA110AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
товар відсутній
P4SMA11AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
товар відсутній
1SMA110Z M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
товар відсутній
1PGSMA110ZHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Description: DIODE, ZENER, 110V
товар відсутній
1SMA110Z R3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
товар відсутній
P4SMA110CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
товар відсутній
P4SMA11CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
товар відсутній
P4SMA110A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
товар відсутній
P4SMA11A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
товар відсутній
P4SMA110AHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
товар відсутній
P4SMA11AHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
товар відсутній
1SMA110ZHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
товар відсутній
P4SMA110A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO214AC
Description: TVS DIODE 94VWM 152VC DO214AC
товар відсутній
P4SMA11A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
товар відсутній
1PGSMA110Z M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Description: DIODE, ZENER, 110V
товар відсутній
BZX55B10 A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Description: DIODE ZENER 10V 500MW DO35
товар відсутній
MTZJ2V7SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.65V 500MW DO34
Description: DIODE ZENER 2.65V 500MW DO34
товар відсутній
TSF10H45C C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
на замовлення 941 шт:
термін постачання 21-31 дні (днів)SMCJ170A V6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
товар відсутній
SMCJ170A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
товар відсутній
SMCJ170A V7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
товар відсутній
SMCJ170AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170V 275V DO214AB
Description: TVS DIODE 170V 275V DO214AB
товар відсутній
BZD27C150PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.57 грн |
BZD27C150PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 36776 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.69 грн |
14+ | 21.13 грн |
100+ | 12.66 грн |
500+ | 11 грн |
1000+ | 7.48 грн |
2000+ | 6.89 грн |
5000+ | 6.49 грн |
BZD27C150PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.14 грн |
6000+ | 6.72 грн |
BZD27C150PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 150V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7661 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.27 грн |
13+ | 22.03 грн |
100+ | 11.13 грн |
500+ | 9.26 грн |
1000+ | 7.21 грн |
BZD27C110PW |
Виробник: Taiwan Semiconductor Corporation
Description: SOD123W 1000MW 5% ZENER DIODE
Description: SOD123W 1000MW 5% ZENER DIODE
товар відсутній
BZD27C110PW |
Виробник: Taiwan Semiconductor Corporation
Description: SOD123W 1000MW 5% ZENER DIODE
Description: SOD123W 1000MW 5% ZENER DIODE
товар відсутній
BZD27C110PWH |
Виробник: Taiwan Semiconductor Corporation
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
товар відсутній
BZD27C110PWH |
Виробник: Taiwan Semiconductor Corporation
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
Description: AUTOMOTIVE SOD123W 1000MW 5% ZEN
товар відсутній
1SMB5950 M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
товар відсутній
1SMB5950 R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
товар відсутній
1SMB5950HM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
товар відсутній
1SMB5950HR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
Description: DIODE ZENER 110V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
товар відсутній
1PGSMB5950 R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
товар відсутній
1PGSMB5950HR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 3W DO214AA
Description: DIODE ZENER 110V 3W DO214AA
товар відсутній
TSP10U60S S1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Description: DIODE SCHOTTKY 60V 10A TO277A
товар відсутній
BZV55B4V3 L1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW MINI MELF
Description: DIODE ZENER 4.3V 500MW MINI MELF
товар відсутній
1.5SMC22A V6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22A V7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22A M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
товар відсутній
1.5SMC22AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22CA V6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22CA M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
товар відсутній
1.5SMC22CA V7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC22CA R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AB
Description: TVS DIODE 18.8V 30.6V DO214AB
товар відсутній
1.5SMC22CAHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC22CAHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18.8VWM 30.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HS5G R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5F R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 5A DO214AB
Description: DIODE GEN PURP 300V 5A DO214AB
товар відсутній
HS5F R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 5A DO214AB
Description: DIODE GEN PURP 300V 5A DO214AB
товар відсутній