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BZD27C130P MTG BZD27C130P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
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BZD27C130PHRFG BZD27C130PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
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BZD27C13PHRFG BZD27C13PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
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P4KE20CA R0G P4KE20CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHR0G P4KE20CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA R1G P4KE20CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHR1G P4KE20CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA A0G P4KE20CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHA0G P4KE20CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA B0G P4KE20CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHB0G P4KE20CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
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HS2FA M2G HS2FA M2G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 1.5A DO214AC
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HER204G A0G HER204G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER202G R0G HER202G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE STANDARD 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER203G R0G HER203G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HER204G R0G HER204G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
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HER207G A0G HER207G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HER207G R0G HER207G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
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HER202G A0G HER202G A0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE STANDARD 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER202G B0G HER202G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER203G B0G HER203G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HER204G B0G HER204G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER207G B0G HER207G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
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BZT55C10 L1G BZT55C10 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZT55C10 L0G BZT55C10 L0G Taiwan Semiconductor Corporation BZT55C2V4 SERIES_I2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
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TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
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BZT55C2V7 L1G BZT55C2V7 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
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BZT55C2V7 L0G BZT55C2V7 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
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SR315 R0G SR315 R0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
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SR315HR0G SR315HR0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
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SR315HA0G SR315HA0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SR315 B0G SR315 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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SR315HB0G SR315HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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GBL204 D2G GBL204 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
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GBL206 D2G GBL206 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
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GBL207 D2G GBL207 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
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GBL201 D2G GBL201 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBL201HD2G GBL201HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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GBL203 D2G GBL203 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBL203HD2G GBL203HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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GBL204HD2G GBL204HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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GBL205HD2G GBL205HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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GBL206HD2G GBL206HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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GBL207HD2G GBL207HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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KBL601G T0 KBL601G T0 Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 50V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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KBL602G T0 KBL602G T0 Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBL604G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
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KBL605G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
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KBL607G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
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KBL601G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
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KBL602G T0G KBL602G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBL603G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBL
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KBL604G T0G KBL604G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBL605G T0G KBL605G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
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KBL607G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
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BZD27C130P MTG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
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BZD27C130PHRFG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
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BZD27C13PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
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P4KE20CA R0G P4KE%20SERIES_M1602.pdf
P4KE20CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHR0G P4KE%20SERIES_M1602.pdf
P4KE20CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA R1G P4KE%20SERIES_M1602.pdf
P4KE20CA R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHR1G P4KE%20SERIES_M1602.pdf
P4KE20CAHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA A0G P4KE%20SERIES_M1602.pdf
P4KE20CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHA0G P4KE%20SERIES_M1602.pdf
P4KE20CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CA B0G P4KE%20SERIES_M1602.pdf
P4KE20CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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P4KE20CAHB0G P4KE%20SERIES_M1602.pdf
P4KE20CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
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HS2FA M2G HS2AA%20SERIES_H14.pdf
HS2FA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO214AC
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HER204G A0G HER201G SERIES_G2105.pdf
HER204G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER202G R0G HER201G%20SERIES_G2105.pdf
HER202G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER203G R0G HER201G%20SERIES_G2105.pdf
HER203G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HER204G R0G HER201G%20SERIES_G2105.pdf
HER204G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
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HER207G A0G HER201G SERIES_G2105.pdf
HER207G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HER207G R0G HER201G%20SERIES_G2105.pdf
HER207G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
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HER202G A0G HER201G%20SERIES_G2105.pdf
HER202G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER202G B0G HER201G%20SERIES_G2105.pdf
HER202G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER203G B0G HER201G%20SERIES_G2105.pdf
HER203G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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HER204G B0G HER201G%20SERIES_G2105.pdf
HER204G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER207G B0G HER201G%20SERIES_G2105.pdf
HER207G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS2MFS M3G
HS2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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HS2MFS M3G
HS2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
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BZT55C10 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C10 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZT55C10 L0G BZT55C2V4 SERIES_I2301.pdf
BZT55C10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
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TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
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BZT55C2V7 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
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BZT55C2V7 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
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SR315 R0G SR302%20SERIES_I13.pdf
SR315 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
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SR315HR0G SR302%20SERIES_I13.pdf
SR315HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
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SR315HA0G
SR315HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SR315 B0G SR302%20SERIES_J2105.pdf
SR315 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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SR315HB0G SR302%20SERIES_J2105.pdf
SR315HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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GBL204 D2G GBL201%20SERIES_J2103.pdf
GBL204 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
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GBL206 D2G GBL201%20SERIES_J2103.pdf
GBL206 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
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GBL207 D2G GBL201%20SERIES_J2103.pdf
GBL207 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
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GBL201 D2G GBL201%20SERIES_J2103.pdf
GBL201 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBL201HD2G GBL201%20SERIES_J2103.pdf
GBL201HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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GBL203 D2G GBL201%20SERIES_J2103.pdf
GBL203 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBL203HD2G GBL201%20SERIES_J2103.pdf
GBL203HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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GBL204HD2G GBL201%20SERIES_J2103.pdf
GBL204HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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GBL205HD2G GBL201%20SERIES_J2103.pdf
GBL205HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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GBL206HD2G GBL201%20SERIES_J2103.pdf
GBL206HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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GBL207HD2G GBL201%20SERIES_J2103.pdf
GBL207HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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KBL601G T0
KBL601G T0
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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KBL602G T0
KBL602G T0
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBL604G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
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KBL605G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
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KBL607G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
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KBL601G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
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KBL602G T0G KBL60xG_F1807_DS.pdf
KBL602G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBL603G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 6A KBL
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KBL604G T0G KBL60xG_F1807_DS.pdf
KBL604G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBL605G T0G KBL60xG_F1807_DS.pdf
KBL605G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
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KBL607G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
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