Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22653) > Сторінка 155 з 378
| Фото | Назва | Виробник | Інформація |
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SMAJ51CAHR3G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 51VWM 82.4VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2318 шт: термін постачання 21-31 дні (днів) |
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MUR340SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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MUR340SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3842 шт: термін постачання 21-31 дні (днів) |
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MUR320SBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR320SBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 145 шт: термін постачання 21-31 дні (днів) |
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MUR320S V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR320S V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR320SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR320SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 726 шт: термін постачання 21-31 дні (днів) |
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MUR310S V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB |
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MUR315S V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB |
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MUR320S V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
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MUR320S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR320S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MUR310S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB |
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MUR315S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 3A DO214AB |
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MUR310S V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB |
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MMSZ5235B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 500MW SOD123F |
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P6KE62CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 53V 85V DO204AC |
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P6KE62CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 53V 85V DO204AC |
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P4KE100A R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 85.5V 137V DO204AL |
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P4KE100AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 85.5V 137V DO204AL |
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TSSW3U60 RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TSSW3U60 RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W |
на замовлення 5591 шт: термін постачання 21-31 дні (днів) |
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BZX55B12 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW DO35 |
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P4SMA15AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8VWM 21.2VC DO214AC |
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P4SMA15A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8VWM 21.2VC DO214AC |
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P4SMA15AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8VWM 21.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Discontinued at Digi-Key Qualification: AEC-Q101 |
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SR503HR0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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GBL202 D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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GBL202HD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Grade: Automotive Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
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1SMA5949 M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 100V 1.5W DO214AC |
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MTZJ9V1SA R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.51V 500MW DO34 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AG, DO-34, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.51 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-34 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
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SFF1608GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 16A ITO220AB |
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BZX585B10 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 200MW SOD523F |
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BZX585B10 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 200MW SOD523F |
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3A100 R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO204AC |
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SMB10J15A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15VWM 24.4VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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SMB10J15A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15VWM 24.4VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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SMB10J14CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14V 23.2V DO214AA |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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SMB10J14CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14V 23.2V DO214AA |
на замовлення 793 шт: термін постачання 21-31 дні (днів) |
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SMB10J14A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AA |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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SMB10J14A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AA |
на замовлення 4119 шт: термін постачання 21-31 дні (днів) |
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SMB10J14CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AA |
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SMB10J14CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 23.2VC DO214AA |
на замовлення 735 шт: термін постачання 21-31 дні (днів) |
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SMB10J14AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14V 23.2V DO214AA |
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SMB10J14AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14V 23.2V DO214AA |
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SK215A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A DO214AC |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SK215A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A DO214AC |
на замовлення 4414 шт: термін постачання 21-31 дні (днів) |
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BZX585B12 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 200MW SOD523F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 8 V |
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BZX585B12 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 200MW SOD523F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 8 V |
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SS12L R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A SUB SMA |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SS12LS RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A SOD123HE |
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SS12LS RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A SOD123HE |
на замовлення 2877 шт: термін постачання 21-31 дні (днів) |
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SS12LSHRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A SOD123HE |
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SS12LSHRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 1A SOD123HE |
на замовлення 1578 шт: термін постачання 21-31 дні (днів) |
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RS1KAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 800V, FAST RECOVERY R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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RS1KAL M3G | Taiwan Semiconductor Corporation | Description: 500NS, 1A, 800V, FAST RECOVERY R |
на замовлення 6635 шт: термін постачання 21-31 дні (днів) |
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YBS2206G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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YBS2204G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
| SMAJ51CAHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2318 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.28 грн |
| 11+ | 26.01 грн |
| 100+ | 18.12 грн |
| 500+ | 13.28 грн |
| MUR340SB R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 850+ | 44.33 грн |
| 1700+ | 33.7 грн |
| 2550+ | 31.45 грн |
| MUR340SB R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3842 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.78 грн |
| 10+ | 66.27 грн |
| 100+ | 51.67 грн |
| MUR320SBHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR320SBHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.75 грн |
| 10+ | 70.58 грн |
| 100+ | 55.02 грн |
| MUR320S V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR320S V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR320SB R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR320SB R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 74.64 грн |
| MUR310S V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Description: DIODE GEN PURP 100V 3A DO214AB
товар відсутній
| MUR315S V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Description: DIODE GEN PURP 150V 3A DO214AB
товар відсутній
| MUR320S V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
| MUR320S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR320S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MUR310S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Description: DIODE GEN PURP 100V 3A DO214AB
товар відсутній
| MUR315S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
Description: DIODE GEN PURP 150V 3A DO214AB
товар відсутній
| MUR310S V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB
Description: DIODE GEN PURP 100V 3A DO214AB
товар відсутній
| MMSZ5235B RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW SOD123F
Description: DIODE ZENER 6.8V 500MW SOD123F
товар відсутній
| P6KE62CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53V 85V DO204AC
Description: TVS DIODE 53V 85V DO204AC
товар відсутній
| P6KE62CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53V 85V DO204AC
Description: TVS DIODE 53V 85V DO204AC
товар відсутній
| P4KE100A R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5V 137V DO204AL
Description: TVS DIODE 85.5V 137V DO204AL
товар відсутній
| P4KE100AHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5V 137V DO204AL
Description: TVS DIODE 85.5V 137V DO204AL
товар відсутній
| TSSW3U60 RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Description: DIODE SCHOTTKY 60V 3A SOD123W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| TSSW3U60 RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Description: DIODE SCHOTTKY 60V 3A SOD123W
на замовлення 5591 шт:
термін постачання 21-31 дні (днів)| BZX55B12 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW DO35
Description: DIODE ZENER 12V 500MW DO35
товар відсутній
| P4SMA15AHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
товар відсутній
| P4SMA15A M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
товар відсутній
| P4SMA15AHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Description: TVS DIODE 12.8VWM 21.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
товар відсутній
| SR503HR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
| GBL202 D2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| GBL202HD2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
| 1SMA5949 M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 100V 1.5W DO214AC
Description: DIODE ZENER 100V 1.5W DO214AC
товар відсутній
| MTZJ9V1SA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.51V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.51 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 8.51V 500MW DO34
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.51 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
товар відсутній
| SFF1608GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AB
Description: DIODE GEN PURP 600V 16A ITO220AB
товар відсутній
| BZX585B10 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD523F
Description: DIODE ZENER 10V 200MW SOD523F
товар відсутній
| BZX585B10 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD523F
Description: DIODE ZENER 10V 200MW SOD523F
товар відсутній
| 3A100 R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO204AC
Description: DIODE GEN PURP 3A DO204AC
товар відсутній
| SMB10J15A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| SMB10J15A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| SMB10J14CAHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14V 23.2V DO214AA
Description: TVS DIODE 14V 23.2V DO214AA
на замовлення 850 шт:
термін постачання 21-31 дні (днів)| SMB10J14CAHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14V 23.2V DO214AA
Description: TVS DIODE 14V 23.2V DO214AA
на замовлення 793 шт:
термін постачання 21-31 дні (днів)| SMB10J14A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AA
Description: TVS DIODE 14VWM 23.2VC DO214AA
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)| SMB10J14A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AA
Description: TVS DIODE 14VWM 23.2VC DO214AA
на замовлення 4119 шт:
термін постачання 21-31 дні (днів)| SMB10J14CA R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AA
Description: TVS DIODE 14VWM 23.2VC DO214AA
товар відсутній
| SMB10J14CA R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO214AA
Description: TVS DIODE 14VWM 23.2VC DO214AA
на замовлення 735 шт:
термін постачання 21-31 дні (днів)| SMB10J14AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14V 23.2V DO214AA
Description: TVS DIODE 14V 23.2V DO214AA
товар відсутній
| SMB10J14AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14V 23.2V DO214AA
Description: TVS DIODE 14V 23.2V DO214AA
товар відсутній
| SK215A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A DO214AC
Description: DIODE SCHOTTKY 150V 2A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| SK215A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A DO214AC
Description: DIODE SCHOTTKY 150V 2A DO214AC
на замовлення 4414 шт:
термін постачання 21-31 дні (днів)| BZX585B12 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Description: DIODE ZENER 12V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
| BZX585B12 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Description: DIODE ZENER 12V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
| SS12L R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SUB SMA
Description: DIODE SCHOTTKY 20V 1A SUB SMA
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| SS12LS RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SOD123HE
Description: DIODE SCHOTTKY 20V 1A SOD123HE
товар відсутній
| SS12LS RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SOD123HE
Description: DIODE SCHOTTKY 20V 1A SOD123HE
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)| SS12LSHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SOD123HE
Description: DIODE SCHOTTKY 20V 1A SOD123HE
товар відсутній
| SS12LSHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A SOD123HE
Description: DIODE SCHOTTKY 20V 1A SOD123HE
на замовлення 1578 шт:
термін постачання 21-31 дні (днів)| RS1KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 800V, FAST RECOVERY R
Description: 500NS, 1A, 800V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| RS1KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 800V, FAST RECOVERY R
Description: 500NS, 1A, 800V, FAST RECOVERY R
на замовлення 6635 шт:
термін постачання 21-31 дні (днів)| YBS2206G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| YBS2204G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)