Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22305) > Сторінка 154 з 372
Фото | Назва | Виробник | Інформація |
Доступність |
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S10KC R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 10A DO214AB |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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S10JCHR7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 10A DO214AB |
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S10JCHR7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 10A DO214AB |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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S10JC R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 10A DO214AB |
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S10JC R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 10A DO214AB |
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SA30CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SA30CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SA30CAHR0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30VWM 64.3VC DO204AC |
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SA30CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SA30CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 10.8A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 64.3V Power - Peak Pulse: 500W Power Line Protection: No |
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BZW06-31B R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
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BZW06-31B A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
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BZW06-31 B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
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BZW06-31B B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 30.8VWM 64.3VC DO204AC |
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TSM6968SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TSM6968SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP |
на замовлення 4728 шт: термін постачання 21-31 дні (днів) |
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S3D V7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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S3D V7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
на замовлення 1667 шт: термін постачання 21-31 дні (днів) |
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S3D V6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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S3D R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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S3D R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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S3DHR7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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S3DHM6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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RS3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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RS3D V6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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RS3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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HS3D V6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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HS3D R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
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P6SMB180CA R5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 154VWM 246VC DO214AA |
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P4SMA8.2AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7.02V 12.1V DO214AC |
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SMF6.0A RVG | Taiwan Semiconductor Corporation | Description: DIODE, TVS, UNIDIRECTIONAL |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SMF6.0A RVG | Taiwan Semiconductor Corporation | Description: DIODE, TVS, UNIDIRECTIONAL |
на замовлення 14850 шт: термін постачання 21-31 дні (днів) |
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SMBJ12AHR5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 12V 19.9V DO214AA |
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MMSZ5261B RHG | Taiwan Semiconductor Corporation | Description: DIODE ZENER 47V 500MW SOD123F |
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RS1KLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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RS1KLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS1KLHMHG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 800MA SUBSMA |
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RS1KLHMQG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 800MA SUBSMA |
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RS1KLHMTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS1KLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS1KL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS1KLHRFG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 800MA SUBSMA |
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RS1KLHRUG | Taiwan Semiconductor Corporation |
Description: DIODE GP 800V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS1KLHRVG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 800MA SUBSMA |
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SK315B R5G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 3A DO214AA |
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SK315B R5G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 3A DO214AA |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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S15MC V7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 15A DO214AB |
на замовлення 26350 шт: термін постачання 21-31 дні (днів) |
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S15MC V7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1KV 15A DO214AB |
на замовлення 26499 шт: термін постачання 21-31 дні (днів) |
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AZ23C22 RFG | Taiwan Semiconductor Corporation | Description: DIODE ZENER ARRAY 22V SOT23 |
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P4KE100CA R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 85.5VWM 137VC DO204AL |
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P4KE100CAHR0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 85.5VWM 137VC DO204AL |
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SMAJ160AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160VWM 259VC DO214AC |
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SMAJ160A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160VWM 259VC DO214AC |
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SMAJ160A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 160VWM 259VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.2A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 400W Power Line Protection: No |
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1PGSMA180Z R3G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 180V 1.25W DO214AC |
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1PGSMA180Z R3G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 180V 1.25W DO214AC |
на замовлення 1210 шт: термін постачання 21-31 дні (днів) |
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SMA6J13A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 13V 20.4V DO214AC |
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SMA6J13A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 13V 20.4V DO214AC |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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S10KC R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 10A DO214AB
Description: DIODE GEN PURP 800V 10A DO214AB
на замовлення 582 шт:
термін постачання 21-31 дні (днів)S10JCHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
S10JCHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
на замовлення 130 шт:
термін постачання 21-31 дні (днів)S10MC R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
S10MC R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
S10JC R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
S10JC R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A DO214AB
Description: DIODE GEN PURP 600V 10A DO214AB
товар відсутній
SA30CA A0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SA30CA B0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SA30CAHR0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Description: TVS DIODE 30VWM 64.3VC DO204AC
товар відсутній
SA30CAHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SA30CAHB0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 30VWM 64.3VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.8A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 64.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
BZW06-31B R0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
товар відсутній
BZW06-31B A0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
товар відсутній
BZW06-31 B0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
товар відсутній
BZW06-31B B0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
Description: TVS DIODE 30.8VWM 64.3VC DO204AC
товар відсутній
TSM6968SDCA RVG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP
Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TSM6968SDCA RVG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP
Description: MOSFET 2 N-CH 20V 6.5A 8TSSOP
на замовлення 4728 шт:
термін постачання 21-31 дні (днів)S3D V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)S3D V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
на замовлення 1667 шт:
термін постачання 21-31 дні (днів)S3D V6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
S3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
S3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
S3DHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
S3DHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
RS3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
RS3D V6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
RS3D V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HS3D V6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
HS3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
P6SMB180CA R5G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
Description: TVS DIODE 154VWM 246VC DO214AA
товар відсутній
P4SMA8.2AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02V 12.1V DO214AC
Description: TVS DIODE 7.02V 12.1V DO214AC
товар відсутній
SMF6.0A RVG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)SMF6.0A RVG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 14850 шт:
термін постачання 21-31 дні (днів)SMBJ12AHR5G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12V 19.9V DO214AA
Description: TVS DIODE 12V 19.9V DO214AA
товар відсутній
MMSZ5261B RHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW SOD123F
Description: DIODE ZENER 47V 500MW SOD123F
товар відсутній
RS1KLHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
RS1KLHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHMHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RS1KLHMQG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RS1KLHMTG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHRTG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL RFG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHRFG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RS1KLHRUG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHRVG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
SK315B R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Description: DIODE SCHOTTKY 150V 3A DO214AA
товар відсутній
SK315B R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Description: DIODE SCHOTTKY 150V 3A DO214AA
на замовлення 851 шт:
термін постачання 21-31 дні (днів)S15MC V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
Description: DIODE GEN PURP 1KV 15A DO214AB
на замовлення 26350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
850+ | 41.08 грн |
1700+ | 31.23 грн |
2550+ | 29.15 грн |
5950+ | 26.64 грн |
S15MC V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 15A DO214AB
Description: DIODE GEN PURP 1KV 15A DO214AB
на замовлення 26499 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 71 грн |
10+ | 61.4 грн |
100+ | 47.88 грн |
AZ23C22 RFG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 22V SOT23
Description: DIODE ZENER ARRAY 22V SOT23
товар відсутній
P4KE100CA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO204AL
Description: TVS DIODE 85.5VWM 137VC DO204AL
товар відсутній
P4KE100CAHR0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO204AL
Description: TVS DIODE 85.5VWM 137VC DO204AL
товар відсутній
SMAJ160AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AC
Description: TVS DIODE 160VWM 259VC DO214AC
товар відсутній
SMAJ160A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AC
Description: TVS DIODE 160VWM 259VC DO214AC
товар відсутній
SMAJ160A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 160VWM 259VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
1PGSMA180Z R3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1.25W DO214AC
Description: DIODE ZENER 180V 1.25W DO214AC
товар відсутній
1PGSMA180Z R3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1.25W DO214AC
Description: DIODE ZENER 180V 1.25W DO214AC
на замовлення 1210 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.12 грн |
12+ | 24.38 грн |
100+ | 18.18 грн |
500+ | 13.41 грн |
SMA6J13A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13V 20.4V DO214AC
Description: TVS DIODE 13V 20.4V DO214AC
товар відсутній
SMA6J13A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13V 20.4V DO214AC
Description: TVS DIODE 13V 20.4V DO214AC
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.09 грн |
10+ | 48.76 грн |