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TSC5802DCP ROG TSC5802DCP ROG Taiwan Semiconductor Corporation TSC5802D_B15.pdf Description: TRANS NPN 450V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
товар відсутній
RS2AAHR3G RS2AAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 50V 1.5A DO214AC
товар відсутній
RS2AAHR3G RS2AAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_H2102.pdf Description: DIODE GEN PURP 50V 1.5A DO214AC
на замовлення 1778 шт:
термін постачання 21-31 дні (днів)
8+38.49 грн
10+ 31.57 грн
100+ 23.57 грн
500+ 17.37 грн
Мінімальне замовлення: 8
HS2F M4G HS2F M4G Taiwan Semiconductor Corporation HS2A%20SERIES_K1701.pdf Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
S5GB R5G S5GB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 400V 5A DO214AA
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
S5GB R5G S5GB R5G Taiwan Semiconductor Corporation S5GB%20SERIES_C1701.pdf Description: DIODE GEN PURP 400V 5A DO214AA
на замовлення 3345 шт:
термін постачання 21-31 дні (днів)
S5G V7G S5G V7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
S5G V7G S5G V7G Taiwan Semiconductor Corporation S5A%20SERIES_D1708.pdf Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)
HER205G A0G HER205G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HER205G R0G HER205G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 400V 2A DO204AC
товар відсутній
HER205G B0G HER205G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BZD27C13PW BZD27C13PW Taiwan Semiconductor Corporation Description: DIODE ZENER 13V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.94 грн
Мінімальне замовлення: 3000
BZD27C13PW BZD27C13PW Taiwan Semiconductor Corporation Description: DIODE ZENER 13V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)
10+31.36 грн
13+ 21.48 грн
100+ 10.82 грн
500+ 9 грн
1000+ 7.01 грн
Мінімальне замовлення: 10
BZD27C13PWH BZD27C13PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C13PWH Description: DIODE ZENER 13V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+8.03 грн
6000+ 7.42 грн
9000+ 6.67 грн
Мінімальне замовлення: 3000
BZD27C13PWH BZD27C13PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C13PWH Description: DIODE ZENER 13V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 9870 шт:
термін постачання 21-31 дні (днів)
10+29.93 грн
13+ 22.24 грн
100+ 13.35 грн
500+ 11.6 грн
1000+ 7.89 грн
Мінімальне замовлення: 10
BZD27C13P RQG BZD27C13P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130P RHG BZD27C130P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RQG BZD27C130P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RTG BZD27C130P RTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MHG BZD27C130P MHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MQG BZD27C130P MQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RFG BZD27C130P RFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RVG BZD27C130P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRHG BZD27C130PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHRHG BZD27C13PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PHM2G BZD27C130PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHMHG BZD27C130PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHM2G BZD27C13PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHMHG BZD27C13PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PHMQG BZD27C130PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHMTG BZD27C130PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRQG BZD27C130PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRTG BZD27C130PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHMQG BZD27C13PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHRTG BZD27C13PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHRQG BZD27C13PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PW BZD27C130PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_B1906.pdf Description: DIODE ZENER 130V 1W SOD123W
товар відсутній
BZD27C130PW BZD27C130PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_B1906.pdf Description: DIODE ZENER 130V 1W SOD123W
товар відсутній
BZD27C130P M2G BZD27C130P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MTG BZD27C130P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRFG BZD27C130PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHRFG BZD27C13PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
P4KE20CA R0G P4KE20CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHR0G P4KE20CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA R1G P4KE20CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHR1G P4KE20CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA A0G P4KE20CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHA0G P4KE20CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA B0G P4KE20CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHB0G P4KE20CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
HS2FA M2G HS2FA M2G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 1.5A DO214AC
товар відсутній
HER204G A0G HER204G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER202G R0G HER202G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G R0G HER203G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G R0G HER204G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
товар відсутній
HER207G A0G HER207G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HER207G R0G HER207G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
HER202G A0G HER202G A0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER202G B0G HER202G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G B0G HER203G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
TSC5802DCP ROG TSC5802D_B15.pdf
TSC5802DCP ROG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 450V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
товар відсутній
RS2AAHR3G RS2AA%20SERIES_H2102.pdf
RS2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
товар відсутній
RS2AAHR3G RS2AA%20SERIES_H2102.pdf
RS2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
на замовлення 1778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.49 грн
10+ 31.57 грн
100+ 23.57 грн
500+ 17.37 грн
Мінімальне замовлення: 8
HS2F M4G HS2A%20SERIES_K1701.pdf
HS2F M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
S5GB R5G S5GB%20SERIES_C1701.pdf
S5GB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AA
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
S5GB R5G S5GB%20SERIES_C1701.pdf
S5GB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AA
на замовлення 3345 шт:
термін постачання 21-31 дні (днів)
S5G V7G S5A%20SERIES_D1708.pdf
S5G V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
S5G V7G S5A%20SERIES_D1708.pdf
S5G V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)
HER205G A0G
HER205G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HER205G R0G HER201G%20SERIES_G2105.pdf
HER205G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
товар відсутній
HER205G B0G HER201G%20SERIES_G2105.pdf
HER205G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BZD27C13PW
BZD27C13PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.94 грн
Мінімальне замовлення: 3000
BZD27C13PW
BZD27C13PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.36 грн
13+ 21.48 грн
100+ 10.82 грн
500+ 9 грн
1000+ 7.01 грн
Мінімальне замовлення: 10
BZD27C13PWH pdf.php?pn=BZD27C13PWH
BZD27C13PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.03 грн
6000+ 7.42 грн
9000+ 6.67 грн
Мінімальне замовлення: 3000
BZD27C13PWH pdf.php?pn=BZD27C13PWH
BZD27C13PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 9870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.93 грн
13+ 22.24 грн
100+ 13.35 грн
500+ 11.6 грн
1000+ 7.89 грн
Мінімальне замовлення: 10
BZD27C13P RQG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130P RHG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RQG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RTG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MHG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MQG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RFG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P RVG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PHM2G BZD27C%20SERIES_AA1806.pdf
BZD27C130PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHMHG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C13PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C13PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
BZD27C130PW BZD27C11PW SERIES_B1906.pdf
BZD27C130PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 1W SOD123W
товар відсутній
BZD27C130PW BZD27C11PW SERIES_B1906.pdf
BZD27C130PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 1W SOD123W
товар відсутній
BZD27C130P M2G BZD27C%20SERIES_AA1806.pdf
BZD27C130P M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130P MTG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C130PHRFG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
товар відсутній
BZD27C13PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товар відсутній
P4KE20CA R0G P4KE%20SERIES_M1602.pdf
P4KE20CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHR0G P4KE%20SERIES_M1602.pdf
P4KE20CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA R1G P4KE%20SERIES_M1602.pdf
P4KE20CA R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHR1G P4KE%20SERIES_M1602.pdf
P4KE20CAHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA A0G P4KE%20SERIES_M1602.pdf
P4KE20CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHA0G P4KE%20SERIES_M1602.pdf
P4KE20CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CA B0G P4KE%20SERIES_M1602.pdf
P4KE20CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
P4KE20CAHB0G P4KE%20SERIES_M1602.pdf
P4KE20CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
товар відсутній
HS2FA M2G HS2AA%20SERIES_H14.pdf
HS2FA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO214AC
товар відсутній
HER204G A0G
HER204G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER202G R0G HER201G%20SERIES_G2105.pdf
HER202G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G R0G HER201G%20SERIES_G2105.pdf
HER203G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
HER204G R0G HER201G%20SERIES_G2105.pdf
HER204G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
товар відсутній
HER207G A0G
HER207G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HER207G R0G HER201G%20SERIES_G2105.pdf
HER207G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
HER202G A0G HER201G%20SERIES_G2105.pdf
HER202G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER202G B0G HER201G%20SERIES_G2105.pdf
HER202G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER203G B0G HER201G%20SERIES_G2105.pdf
HER203G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
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