Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10949) > Сторінка 48 з 183
| Фото | Назва | Виробник | Інформація |
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SI7366DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 20V 13A PPAK SO-8 |
товар відсутній |
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SI7386DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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SI7411DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 7.5A 1212-8 |
товар відсутній |
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SI7414DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 5.6A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
на замовлення 11123 шт: термін постачання 21-31 дні (днів) |
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SI7415DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
на замовлення 29215 шт: термін постачання 21-31 дні (днів) |
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SI7430DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 26A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
на замовлення 6035 шт: термін постачання 21-31 дні (днів) |
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SI7434DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 2.3A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
на замовлення 472 шт: термін постачання 21-31 дні (днів) |
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SI7450DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 3.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
на замовлення 2854 шт: термін постачання 21-31 дні (днів) |
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SI7456DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.7A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
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SI7459DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 13A PPAK SO-8 |
товар відсутній |
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SI7461DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V |
на замовлення 42077 шт: термін постачання 21-31 дні (днів) |
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SI7463DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 11A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V |
на замовлення 2292 шт: термін постачання 21-31 дні (днів) |
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SI7465DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
на замовлення 27927 шт: термін постачання 21-31 дні (днів) |
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SI7483ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 14A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V |
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SI7485DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12.5A PPAK SO-8 |
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SI7489DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 28A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V Power Dissipation (Max): 5.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
на замовлення 10694 шт: термін постачання 21-31 дні (днів) |
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SI7501DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 5.4A 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
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SI7540DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8 |
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SI7818DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 2.2A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
на замовлення 5709 шт: термін постачання 21-31 дні (днів) |
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SI7820DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
на замовлення 11930 шт: термін постачання 21-31 дні (днів) |
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SI7842DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Obsolete |
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SI7844DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
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SI7858ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 20A PPAK SO-8 |
на замовлення 2959 шт: термін постачання 21-31 дні (днів) |
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SI7892BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
на замовлення 1581 шт: термін постачання 21-31 дні (днів) |
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SI7898DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 3A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
на замовлення 13972 шт: термін постачання 21-31 дні (днів) |
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SI7922DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
на замовлення 42035 шт: термін постачання 21-31 дні (днів) |
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SI7942DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
на замовлення 4991 шт: термін постачання 21-31 дні (днів) |
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SI7945DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 7A PPAK SO-8 |
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SI7958DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
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SI7960DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
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SIA411DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 |
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SIA914DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 |
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SIB911DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.6A SC75-6 |
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SI1065X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 1.18A SC89-6 |
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SI4378DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 19A 8-SOIC |
на замовлення 6620 шт: термін постачання 21-31 дні (днів) |
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SI5435BDC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4.3A 1206-8 |
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SI5447DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.5A 1206-8 |
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SI6433BDQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 4A 8-TSSOP |
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SI6459BDQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.2A 8-TSSOP |
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SI6463BDQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6.2A 8-TSSOP |
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SI6963BDQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.4A 8-TSSOP |
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SI7107DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 1212-8 |
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SI7114DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 11.7A 1212-8 |
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SI7366DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 13A PPAK SO-8 |
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SI7958DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
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SIA411DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 |
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SIA914DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 |
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SUB75P03-07-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 75A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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SIHP18N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
на замовлення 599 шт: термін постачання 21-31 дні (днів) |
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SIHG20N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
на замовлення 3178 шт: термін постачання 21-31 дні (днів) |
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SIHP22N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO220AB |
товар відсутній |
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SIHG22N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V |
товар відсутній |
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DG2522DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.1Ohm -3db Bandwidth: 105MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 1.6V ~ 5.5V Charge Injection: 27pC Crosstalk: -64dB @ 1MHz Switch Circuit: SP3T Multiplexer/Demultiplexer Circuit: 3:1 Channel-to-Channel Matching (ΔRon): 100mOhm (Max) Switch Time (Ton, Toff) (Max): 75ns, 60ns Channel Capacitance (CS(off), CD(off)): 51pF Current - Leakage (IS(off)) (Max): 20nA Part Status: Obsolete Number of Circuits: 1 |
товар відсутній |
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DG2706DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH QUAD SPDT 16-MINIQFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DG2714DL-T1-E3 | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm Supplier Device Package: SC-70-6 Voltage - Supply, Single (V+): 1.5V ~ 3.6V Charge Injection: 9pC Crosstalk: -64dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm (Max) Switch Time (Ton, Toff) (Max): 51ns, 33ns Channel Capacitance (CS(off), CD(off)): 30pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
товар відсутній |
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DG2720DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH DPDT USB2.0 10-MINIQFN |
товар відсутній |
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DG2722DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH DPDT USB2.0 10-MINIQFN |
товар відсутній |
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DG2727DN-T1-E4 | Vishay Siliconix |
Description: IC SWTICH DUAL SPST 8-MINIQFN |
товар відсутній |
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DG2735DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN |
товар відсутній |
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DG2737DN-T1-E4 | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 720MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 2.3V ~ 4.3V Charge Injection: 10.4pC Crosstalk: -109dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товар відсутній |
| SI7366DP-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Description: MOSFET N-CH 20V 13A PPAK SO-8
товар відсутній
| SI7386DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Description: MOSFET N-CH 30V 12A PPAK SO-8
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.9 грн |
| 10+ | 95.5 грн |
| 100+ | 74.44 грн |
| 500+ | 57.71 грн |
| 1000+ | 45.56 грн |
| SI7414DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
на замовлення 11123 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 98.1 грн |
| 10+ | 78.18 грн |
| 100+ | 62.26 грн |
| 500+ | 49.43 грн |
| 1000+ | 41.94 грн |
| SI7415DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
на замовлення 29215 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 100.95 грн |
| 10+ | 80.71 грн |
| 100+ | 64.27 грн |
| 500+ | 51.03 грн |
| 1000+ | 43.3 грн |
| SI7430DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Description: MOSFET N-CH 150V 26A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
на замовлення 6035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.12 грн |
| 10+ | 149.17 грн |
| 100+ | 120.67 грн |
| 500+ | 100.66 грн |
| 1000+ | 86.19 грн |
| SI7434DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
на замовлення 472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.22 грн |
| 10+ | 193.19 грн |
| 100+ | 158.29 грн |
| SI7450DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
на замовлення 2854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.57 грн |
| 10+ | 144.45 грн |
| 100+ | 114.96 грн |
| 500+ | 91.29 грн |
| 1000+ | 77.45 грн |
| SI7456DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 149.29 грн |
| 10+ | 129.11 грн |
| 100+ | 103.77 грн |
| SI7459DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Description: MOSFET P-CH 30V 13A PPAK SO-8
товар відсутній
| SI7461DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
на замовлення 42077 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 151.42 грн |
| 10+ | 121.17 грн |
| 100+ | 96.46 грн |
| 500+ | 76.6 грн |
| 1000+ | 64.99 грн |
| SI7463DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
на замовлення 2292 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.01 грн |
| 10+ | 180.93 грн |
| 100+ | 145.45 грн |
| 500+ | 112.15 грн |
| 1000+ | 92.92 грн |
| SI7465DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
на замовлення 27927 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.18 грн |
| 10+ | 65.51 грн |
| 100+ | 50.95 грн |
| 500+ | 40.53 грн |
| 1000+ | 33.01 грн |
| SI7483ADP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
товар відсутній
| SI7485DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
товар відсутній
| SI7489DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
на замовлення 10694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.64 грн |
| 10+ | 132.53 грн |
| 100+ | 105.45 грн |
| 500+ | 83.74 грн |
| 1000+ | 71.05 грн |
| SI7501DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
товар відсутній
| SI7540DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
товар відсутній
| SI7818DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
на замовлення 5709 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.79 грн |
| 10+ | 81.67 грн |
| 100+ | 63.54 грн |
| 500+ | 50.54 грн |
| 1000+ | 41.17 грн |
| SI7820DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
на замовлення 11930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 96.68 грн |
| 10+ | 77.49 грн |
| 100+ | 61.67 грн |
| 500+ | 48.97 грн |
| 1000+ | 41.55 грн |
| SI7842DP-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
товар відсутній
| SI7844DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
товар відсутній
| SI7858ADP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
Description: MOSFET N-CH 12V 20A PPAK SO-8
на замовлення 2959 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.58 грн |
| 10+ | 179.5 грн |
| 100+ | 144.25 грн |
| 500+ | 111.23 грн |
| 1000+ | 95.34 грн |
| SI7892BDP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.14 грн |
| 10+ | 95.98 грн |
| 100+ | 76.36 грн |
| 500+ | 60.63 грн |
| 1000+ | 51.45 грн |
| SI7898DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
на замовлення 13972 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.47 грн |
| 10+ | 112.61 грн |
| 100+ | 89.64 грн |
| 500+ | 71.18 грн |
| 1000+ | 60.4 грн |
| SI7922DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 42035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.9 грн |
| 10+ | 88.31 грн |
| 100+ | 70.31 грн |
| 500+ | 55.83 грн |
| 1000+ | 47.37 грн |
| SI7942DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
на замовлення 4991 шт:
термін постачання 21-31 дні (днів)| SI7945DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
товар відсутній
| SI7958DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
товар відсутній
| SI7960DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
товар відсутній
| SI4378DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Description: MOSFET N-CH 20V 19A 8-SOIC
на замовлення 6620 шт:
термін постачання 21-31 дні (днів)| SI6459BDQ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
товар відсутній
| SI6463BDQ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
товар відсутній
| SI6963BDQ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8-TSSOP
Description: MOSFET 2P-CH 20V 3.4A 8-TSSOP
товар відсутній
| SI7366DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Description: MOSFET N-CH 20V 13A PPAK SO-8
товар відсутній
| SI7958DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
товар відсутній
| SUB75P03-07-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товар відсутній
| SIHP18N50C-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.86 грн |
| 50+ | 139.22 грн |
| 100+ | 114.54 грн |
| 500+ | 90.95 грн |
| SIHG20N50C-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
на замовлення 3178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.94 грн |
| 25+ | 146.14 грн |
| 100+ | 125.26 грн |
| 500+ | 104.5 грн |
| 1000+ | 89.47 грн |
| 2000+ | 84.25 грн |
| SIHG22N60S-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
товар відсутній
| DG2522DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
| DG2706DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 16-MINIQFN
Description: IC SWITCH QUAD SPDT 16-MINIQFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| DG2714DL-T1-E3 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
товар відсутній
| DG2720DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
товар відсутній
| DG2722DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
товар відсутній
| DG2735DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
товар відсутній
| DG2737DN-T1-E4 |
|
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
товар відсутній