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DG411DY-T1 DG411DY-T1 Vishay Siliconix DG411-413.pdf Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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DG411HSDN-T1-E4 DG411HSDN-T1-E4 Vishay Siliconix dg411hs.pdf Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 4422 шт:
термін постачання 21-31 дні (днів)
2+306.48 грн
10+223.22 грн
25+205.36 грн
100+174.34 грн
250+165.56 грн
500+160.27 грн
1000+153.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG411HSDY-T1-E3 DG411HSDY-T1-E3 Vishay Siliconix dg411hs.pdf Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
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DG411LDQ-T1-E3 DG411LDQ-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SW SPST-NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG411LDY-T1-E3 DG411LDY-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG412DY-T1-E3 DG412DY-T1-E3 Vishay Siliconix dg411-extractor.pdf Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
2+203.22 грн
10+146.13 грн
25+133.77 грн
100+112.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG412HSDN-T1-E4 DG412HSDN-T1-E4 Vishay Siliconix dg411hs.pdf Description: IC SWITCH SPST-NOX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2073 шт:
термін постачання 21-31 дні (днів)
2+327.13 грн
10+238.41 грн
25+219.33 грн
100+186.19 грн
250+176.81 грн
500+171.17 грн
1000+163.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG412LDQ-T1-E3 DG412LDQ-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SW SPST-NOX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG412LDY-T1-E3 DG412LDY-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SWITCH SPST-NOX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG413DY-T1-E3 DG413DY-T1-E3 Vishay Siliconix dg411-extractor.pdf Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
2+203.22 грн
10+146.13 грн
25+133.77 грн
100+112.77 грн
250+106.68 грн
500+103.01 грн
1000+98.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG413LDQ-T1-E3 DG413LDQ-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SW SPST-NO/NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
товару немає в наявності
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DG413LDY-T1-E3 DG413LDY-T1-E3 Vishay Siliconix DG411L%2C412L%2C413L.pdf Description: IC SW SPST-NO/NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
товару немає в наявності
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DG4157DL-T1-E3 DG4157DL-T1-E3 Vishay Siliconix dg4157.pdf Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
товару немає в наявності
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DG4157DN-T1-E4 DG4157DN-T1-E4 Vishay Siliconix dg4157.pdf Description: IC SWITCH SPDTX1 1.2OHM 6MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: 6-miniQFN (1x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
товару немає в наявності
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DG508BEY-T1-E3 DG508BEY-T1-E3 Vishay Siliconix dg508b.pdf Description: IC MUX 8:1 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 4413 шт:
термін постачання 21-31 дні (днів)
2+185.87 грн
10+133.17 грн
25+121.65 грн
100+102.27 грн
250+96.60 грн
500+93.18 грн
1000+88.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG508BEQ-T1-E3 DG508BEQ-T1-E3 Vishay Siliconix dg508b.pdf Description: IC MUX 8:1 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
товару немає в наявності
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DG509BEY-T1-E3 DG509BEY-T1-E3 Vishay Siliconix dg508b.pdf Description: IC SWITCH SP4T X 2 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 789 шт:
термін постачання 21-31 дні (днів)
2+172.65 грн
10+123.86 грн
25+113.15 грн
100+95.11 грн
250+89.84 грн
500+86.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG509BEQ-T1-E3 DG509BEQ-T1-E3 Vishay Siliconix dg508b.pdf Description: IC SWITCH SP4TX2 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 2232 шт:
термін постачання 21-31 дні (днів)
2+201.57 грн
10+145.18 грн
25+132.88 грн
100+112.00 грн
250+105.95 грн
500+102.31 грн
1000+97.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG611DY-T1-E3 DG611DY-T1-E3 Vishay Siliconix DG611-13.pdf Description: IC SWITCH SPST-NCX4 45OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Charge Injection: 4pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
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DG612DY-T1-E3 DG612DY-T1-E3 Vishay Siliconix DG611-13.pdf Description: IC SWITCH QUAD SPST 16-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
DG636EN-T1-E4 DG636EN-T1-E4 Vishay Siliconix dg636.pdf Description: IC SW SPDTX2 115OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
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DG9421DV-T1-E3 DG9421DV-T1-E3 Vishay Siliconix dg9421.pdf Description: IC SWITCH SPST-NC X 1 3OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 6V
Charge Injection: 43pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 45ns, 47ns
Channel Capacitance (CS(off), CD(off)): 31pF, 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9422DV-T1-E3 DG9422DV-T1-E3 Vishay Siliconix dg9421.pdf Description: IC SWITCH SNGL SPST 5V 6TSOP
товару немає в наявності
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DG2706DN-T1-E4 DG2706DN-T1-E4 Vishay Siliconix dg2706.pdf Description: IC SWITCH QUAD SPDT 16-MINIQFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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DG2722DN-T1-E4 DG2722DN-T1-E4 Vishay Siliconix dg2722.pdf Description: IC SWITCH DPDT USB2.0 10-MINIQFN
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
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DG2735DN-T1-E4 DG2735DN-T1-E4 Vishay Siliconix dg2735.pdf Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
на замовлення 4620 шт:
термін постачання 21-31 дні (днів)
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SI7852ADP-T1-E3 SI7852ADP-T1-E3 Vishay Siliconix si7852ad.pdf Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+99.07 грн
Мінімальне замовлення: 3000
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SI7852ADP-T1-E3 SI7852ADP-T1-E3 Vishay Siliconix si7852ad.pdf Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
на замовлення 3901 шт:
термін постачання 21-31 дні (днів)
2+299.04 грн
10+188.45 грн
100+132.00 грн
500+101.25 грн
1000+93.98 грн
Мінімальне замовлення: 2
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SI7880ADP-T1-E3 SI7880ADP-T1-E3 Vishay Siliconix si7880adp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
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SI7860ADP-T1-E3 SI7860ADP-T1-E3 Vishay Siliconix si7860ad.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
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SI2303BDS-T1 SI2303BDS-T1 Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
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SI2343DS-T1 SI2343DS-T1 Vishay Siliconix Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
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IRF530STRLPBF IRF530STRLPBF Vishay Siliconix sihf530s.pdf Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+52.33 грн
Мінімальне замовлення: 800
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SI2335DS-T1-E3 SI2335DS-T1-E3 Vishay Siliconix 71314.pdf Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
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SI2302ADS-T1 SI2302ADS-T1 Vishay Siliconix si2302ad.pdf Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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SI2302CDS-T1-E3 SI2302CDS-T1-E3 Vishay Siliconix si2302cds.pdf Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
на замовлення 73200 шт:
термін постачання 21-31 дні (днів)
3000+12.81 грн
6000+11.31 грн
9000+10.78 грн
15000+9.56 грн
21000+9.24 грн
30000+8.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2316BDS-T1-E3 SI2316BDS-T1-E3 Vishay Siliconix si2316bd.pdf Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
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SI2323DS-T1 SI2323DS-T1 Vishay Siliconix si2323ds.pdf Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
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SI1553DL-T1 SI1553DL-T1 Vishay Siliconix SI1553DL.pdf Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
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TP0610K-T1 TP0610K-T1 Vishay Siliconix tp0610k.pdf Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
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DG3001DB-T1-E1 Vishay Siliconix DG3001%2C2%2C3.pdf Description: IC SWITCH SPST 700MOHM 6MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 700mOhm
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 64pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10mOhm
Switch Time (Ton, Toff) (Max): 71ns, 59ns
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
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SI9945AEY-T1 SI9945AEY-T1 Vishay Siliconix Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI7460DP-T1-E3 SI7460DP-T1-E3 Vishay Siliconix si7460dp.pdf Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
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SUD06N10-225L-E3 SUD06N10-225L-E3 Vishay Siliconix SUD06N10-225L.pdf Description: MOSFET N-CH 100V 6.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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DG413LDQ-E3 DG413LDQ-E3 Vishay Siliconix dg411l.pdf Description: IC SWITCH QUAD SPST LV 16-TSSOP
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SIR426DP-T1-GE3 SIR426DP-T1-GE3 Vishay Siliconix sir426dp.pdf Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+29.48 грн
6000+26.40 грн
9000+26.28 грн
Мінімальне замовлення: 3000
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SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix 70682.pdf Description: MOSFET P-CH 12V 0.87A SC89
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SI1070X-T1-GE3 SI1070X-T1-GE3 Vishay Siliconix si1070x.pdf Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
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SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix 70682.pdf Description: MOSFET P-CH 12V 0.87A SC89
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SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix 70682.pdf Description: MOSFET P-CH 12V 0.87A SC89
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SI1070X-T1-GE3 SI1070X-T1-GE3 Vishay Siliconix si1070x.pdf Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
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SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix Si1021R.PDF Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+13.29 грн
6000+11.84 грн
9000+11.36 грн
15000+10.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix si1025x.pdf Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
3000+13.03 грн
6000+11.90 грн
9000+11.30 грн
15000+10.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1031R-T1-GE3 SI1031R-T1-GE3 Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
на замовлення 19800 шт:
термін постачання 21-31 дні (днів)
3000+11.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix si1035x.pdf Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1050X-T1-GE3 SI1050X-T1-GE3 Vishay Siliconix si1050x.pdf Description: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+13.79 грн
6000+12.17 грн
9000+11.60 грн
15000+10.29 грн
21000+9.94 грн
30000+9.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1056X-T1-GE3 SI1056X-T1-GE3 Vishay Siliconix si1056x.pdf Description: MOSFET N-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
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SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix si1300bd.pdf Description: MOSFET N-CH 20V 400MA SC-70-3
товару немає в наявності
В кошику  од. на суму  грн.
SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix 71249.pdf Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+11.31 грн
6000+10.19 грн
15000+9.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1304BDL-T1-GE3 SI1304BDL-T1-GE3 Vishay Siliconix si1304bd.pdf Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
товару немає в наявності
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DG411DY-T1 DG411-413.pdf
DG411DY-T1
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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DG411HSDN-T1-E4 dg411hs.pdf
DG411HSDN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 4422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.48 грн
10+223.22 грн
25+205.36 грн
100+174.34 грн
250+165.56 грн
500+160.27 грн
1000+153.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG411HSDY-T1-E3 dg411hs.pdf
DG411HSDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
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DG411LDQ-T1-E3 DG411L%2C412L%2C413L.pdf
DG411LDQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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DG411LDY-T1-E3 DG411L%2C412L%2C413L.pdf
DG411LDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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DG412DY-T1-E3 dg411-extractor.pdf
DG412DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.22 грн
10+146.13 грн
25+133.77 грн
100+112.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG412HSDN-T1-E4 dg411hs.pdf
DG412HSDN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2073 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.13 грн
10+238.41 грн
25+219.33 грн
100+186.19 грн
250+176.81 грн
500+171.17 грн
1000+163.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG412LDQ-T1-E3 DG411L%2C412L%2C413L.pdf
DG412LDQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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DG412LDY-T1-E3 DG411L%2C412L%2C413L.pdf
DG412LDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
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DG413DY-T1-E3 dg411-extractor.pdf
DG413DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.22 грн
10+146.13 грн
25+133.77 грн
100+112.77 грн
250+106.68 грн
500+103.01 грн
1000+98.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG413LDQ-T1-E3 DG411L%2C412L%2C413L.pdf
DG413LDQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
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DG413LDY-T1-E3 DG411L%2C412L%2C413L.pdf
DG413LDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
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DG4157DL-T1-E3 dg4157.pdf
DG4157DL-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
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DG4157DN-T1-E4 dg4157.pdf
DG4157DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPDTX1 1.2OHM 6MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: 6-miniQFN (1x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
товару немає в наявності
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DG508BEY-T1-E3 dg508b.pdf
DG508BEY-T1-E3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 4413 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.87 грн
10+133.17 грн
25+121.65 грн
100+102.27 грн
250+96.60 грн
500+93.18 грн
1000+88.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG508BEQ-T1-E3 dg508b.pdf
DG508BEQ-T1-E3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG509BEY-T1-E3 dg508b.pdf
DG509BEY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.65 грн
10+123.86 грн
25+113.15 грн
100+95.11 грн
250+89.84 грн
500+86.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG509BEQ-T1-E3 dg508b.pdf
DG509BEQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4TX2 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 2232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.57 грн
10+145.18 грн
25+132.88 грн
100+112.00 грн
250+105.95 грн
500+102.31 грн
1000+97.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG611DY-T1-E3 DG611-13.pdf
DG611DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 45OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Charge Injection: 4pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
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DG612DY-T1-E3 DG611-13.pdf
DG612DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
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DG636EN-T1-E4 dg636.pdf
DG636EN-T1-E4
Виробник: Vishay Siliconix
Description: IC SW SPDTX2 115OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
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DG9421DV-T1-E3 dg9421.pdf
DG9421DV-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NC X 1 3OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 6V
Charge Injection: 43pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 45ns, 47ns
Channel Capacitance (CS(off), CD(off)): 31pF, 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9422DV-T1-E3 dg9421.pdf
DG9422DV-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SNGL SPST 5V 6TSOP
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DG2706DN-T1-E4 dg2706.pdf
DG2706DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 16-MINIQFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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DG2722DN-T1-E4 dg2722.pdf
DG2722DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
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DG2735DN-T1-E4 dg2735.pdf
DG2735DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
на замовлення 4620 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SI7852ADP-T1-E3 si7852ad.pdf
SI7852ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+99.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7852ADP-T1-E3 si7852ad.pdf
SI7852ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
на замовлення 3901 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+299.04 грн
10+188.45 грн
100+132.00 грн
500+101.25 грн
1000+93.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI7880ADP-T1-E3 si7880adp.pdf
SI7880ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
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SI7860ADP-T1-E3 si7860ad.pdf
SI7860ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
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SI2303BDS-T1
SI2303BDS-T1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
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SI2343DS-T1
SI2343DS-T1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
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IRF530STRLPBF sihf530s.pdf
IRF530STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+52.33 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SI2335DS-T1-E3 71314.pdf
SI2335DS-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
товару немає в наявності
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SI2302ADS-T1 si2302ad.pdf
SI2302ADS-T1
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
товару немає в наявності
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SI2302CDS-T1-E3 si2302cds.pdf
SI2302CDS-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
на замовлення 73200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.81 грн
6000+11.31 грн
9000+10.78 грн
15000+9.56 грн
21000+9.24 грн
30000+8.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2316BDS-T1-E3 si2316bd.pdf
SI2316BDS-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
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SI2323DS-T1 si2323ds.pdf
SI2323DS-T1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
товару немає в наявності
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SI1553DL-T1 SI1553DL.pdf
SI1553DL-T1
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
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TP0610K-T1 tp0610k.pdf
TP0610K-T1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
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DG3001DB-T1-E1 DG3001%2C2%2C3.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH SPST 700MOHM 6MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 700mOhm
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 64pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10mOhm
Switch Time (Ton, Toff) (Max): 71ns, 59ns
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
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SI9945AEY-T1
SI9945AEY-T1
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
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SI7460DP-T1-E3 si7460dp.pdf
SI7460DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
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SUD06N10-225L-E3 SUD06N10-225L.pdf
SUD06N10-225L-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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DG413LDQ-E3 dg411l.pdf
DG413LDQ-E3
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
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SIR426DP-T1-GE3 sir426dp.pdf
SIR426DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.48 грн
6000+26.40 грн
9000+26.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1039X-T1-GE3 70682.pdf
SI1039X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
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SI1070X-T1-GE3 si1070x.pdf
SI1070X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
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SI1039X-T1-GE3 70682.pdf
SI1039X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
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SI1039X-T1-GE3 70682.pdf
SI1039X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
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SI1070X-T1-GE3 si1070x.pdf
SI1070X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
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SI1021R-T1-GE3 Si1021R.PDF
SI1021R-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.29 грн
6000+11.84 грн
9000+11.36 грн
15000+10.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1025X-T1-GE3 si1025x.pdf
SI1025X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.03 грн
6000+11.90 грн
9000+11.30 грн
15000+10.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1031R-T1-GE3 si1031r.pdf
SI1031R-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
на замовлення 19800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1035X-T1-GE3 si1035x.pdf
SI1035X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1050X-T1-GE3 si1050x.pdf
SI1050X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.79 грн
6000+12.17 грн
9000+11.60 грн
15000+10.29 грн
21000+9.94 грн
30000+9.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1056X-T1-GE3 si1056x.pdf
SI1056X-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
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SI1300BDL-T1-GE3 si1300bd.pdf
SI1300BDL-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 400MA SC-70-3
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SI1302DL-T1-GE3 71249.pdf
SI1302DL-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.31 грн
6000+10.19 грн
15000+9.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1304BDL-T1-GE3 si1304bd.pdf
SI1304BDL-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
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