Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5952) > Сторінка 17 з 100
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BYV430J-600PQ | WeEn Semiconductors |
Description: DIODE ARRAY GP 600V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3838 шт: термін постачання 21-31 дні (днів) |
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BYV415J-600PQ | WeEn Semiconductors | Description: DIODE TO3PF STANDARD M |
товар відсутній |
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WG50N65DHWQ | WeEn Semiconductors |
Description: IGBT TRENCH FS 650V 91A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 66ns/163ns Switching Energy: 1.7mJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 91 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 278 W |
на замовлення 556 шт: термін постачання 21-31 дні (днів) |
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BTA206X-800CT/L02Q | WeEn Semiconductors |
Description: TRIAC 800V 6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 7197 шт: термін постачання 21-31 дні (днів) |
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BTA425Z-800CTQ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 25A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-3P Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 800 V |
на замовлення 69 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UD4X | WeEn Semiconductors |
Description: THE ESDALD05UD4 IS DESIGNED TO P Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 88W Power Line Protection: Yes Part Status: Active |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UD4X | WeEn Semiconductors |
Description: THE ESDALD05UD4 IS DESIGNED TO P Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 88W Power Line Protection: Yes Part Status: Active |
на замовлення 47446 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UE2X | WeEn Semiconductors |
Description: TVS DIODE 5VWM 15VC SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3L Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: Yes Part Status: Active |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UE2X | WeEn Semiconductors |
Description: TVS DIODE 5VWM 15VC SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3L Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: Yes Part Status: Active |
на замовлення 78879 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UG4X | WeEn Semiconductors |
Description: THE ESDALD05UG4 IS A LOW CAPACIT Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN2510 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Active |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UG4X | WeEn Semiconductors |
Description: THE ESDALD05UG4 IS A LOW CAPACIT Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN2510 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Active |
на замовлення 88595 шт: термін постачання 21-31 дні (днів) |
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NXPSC20650W-AQ | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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WNSC6D20650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 526 шт: термін постачання 21-31 дні (днів) |
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WNSC6D10650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 935 шт: термін постачання 21-31 дні (днів) |
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WNSC16650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товар відсутній |
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WNSC2D16650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товар відсутній |
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BTA308X-800C0,127 | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 16103 шт: термін постачання 21-31 дні (днів) |
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BTA330-800BTQ | WeEn Semiconductors | Description: TRIAC 800V 30A TO220AB |
товар відсутній |
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NXPSC20650W6Q | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 707 шт: термін постачання 21-31 дні (днів) |
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WNSC051200Q | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A D2PAK |
на замовлення 3165 шт: термін постачання 21-31 дні (днів) |
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BUJ303AX,127 | WeEn Semiconductors |
Description: TRANS NPN 500V 5A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V Supplier Device Package: TO-220F Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 32 W |
на замовлення 7439 шт: термін постачання 21-31 дні (днів) |
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MCR100W-10MF | WeEn Semiconductors |
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 90 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.45 V Current - Off State (Max): 1 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1 kV |
товар відсутній |
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MCR100W-10MF | WeEn Semiconductors |
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 90 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.45 V Current - Off State (Max): 1 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1 kV |
товар відсутній |
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BYC30X-600PSQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 30A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 23963 шт: термін постачання 21-31 дні (днів) |
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BYC30JT-600PSQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 30A TO3PF Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UJ2X | WeEn Semiconductors |
Description: THE ESDALD05UJ2 IS A LOW CAPACIT Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 136W Power Line Protection: Yes Part Status: Active |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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ESDALD05UJ2X | WeEn Semiconductors |
Description: THE ESDALD05UJ2 IS A LOW CAPACIT Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 136W Power Line Protection: Yes Part Status: Active |
на замовлення 82513 шт: термін постачання 21-31 дні (днів) |
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ACTT4S-800E,118 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
на замовлення 58852 шт: термін постачання 21-31 дні (днів) |
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MUR560J | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 5A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 64 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 17293 шт: термін постачання 21-31 дні (днів) |
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BYV10MX-600PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 12015 шт: термін постачання 21-31 дні (днів) |
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ESDHD05UFX | WeEn Semiconductors |
Description: THE ESDHD05UF IS DESIGNED TO PRO Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 320W Power Line Protection: No Part Status: Active |
на замовлення 280000 шт: термін постачання 21-31 дні (днів) |
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ESDHD05UFX | WeEn Semiconductors |
Description: THE ESDHD05UF IS DESIGNED TO PRO Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 320W Power Line Protection: No Part Status: Active |
на замовлення 298655 шт: термін постачання 21-31 дні (днів) |
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WNSC2D16650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 2369 шт: термін постачання 21-31 дні (днів) |
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BT151-650LTFQ | WeEn Semiconductors |
Description: PLANAR PASSIVATED SILICON CONTRO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
на замовлення 5498 шт: термін постачання 21-31 дні (днів) |
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BT151Y-650LTFQ | WeEn Semiconductors |
Description: PLANAR PASSIVATED SILICON CONTRO Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
на замовлення 23050 шт: термін постачання 21-31 дні (днів) |
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WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tape & Reel (TR) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Cut Tape (CT) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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BYR29X-600,127 | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 8A TO220FP Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BYR29X-800,127 | WeEn Semiconductors | Description: DIODE GEN PURP 800V 8A TO220FP |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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BYR29X-800PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 800V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товар відсутній |
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WNSC2D30650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2697 шт: термін постачання 21-31 дні (днів) |
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WNSC2D30650WQ | WeEn Semiconductors |
Description: SILICON CARBIDE SCHOTTKY DI Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 980pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 1025 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK |
на замовлення 6834 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650X6Q | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A TO220F Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 2986 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A DPAK |
на замовлення 7184 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A D2PAK |
на замовлення 3190 шт: термін постачання 21-31 дні (днів) |
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NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
на замовлення 5600 шт: термін постачання 21-31 дні (днів) |
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NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
на замовлення 6298 шт: термін постачання 21-31 дні (днів) |
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WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 5108 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 15950 шт: термін постачання 21-31 дні (днів) |
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BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
на замовлення 9866 шт: термін постачання 21-31 дні (днів) |
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BTA202-1000ETEP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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WNSC12650T6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Description: DIODE SIL CARBIDE 650V 12A 5DFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 132.16 грн |
WNSC12650T6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Description: DIODE SIL CARBIDE 650V 12A 5DFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)BYV430J-600PQ |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3838 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.88 грн |
10+ | 123.96 грн |
100+ | 98.65 грн |
500+ | 78.34 грн |
1000+ | 66.47 грн |
2000+ | 63.14 грн |
WG50N65DHWQ |
Виробник: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
на замовлення 556 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.24 грн |
30+ | 176.61 грн |
120+ | 151.39 грн |
510+ | 126.29 грн |
BTA206X-800CT/L02Q |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 7197 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.47 грн |
50+ | 44.12 грн |
100+ | 32.03 грн |
500+ | 25.11 грн |
1000+ | 21.37 грн |
2000+ | 19.03 грн |
5000+ | 17.74 грн |
BTA425Z-800CTQ |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 157.04 грн |
10+ | 125.56 грн |
ESDALD05UD4X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.29 грн |
6000+ | 3.95 грн |
9000+ | 3.42 грн |
30000+ | 3.15 грн |
ESDALD05UD4X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
на замовлення 47446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
18+ | 16.09 грн |
100+ | 8.12 грн |
500+ | 6.21 грн |
1000+ | 4.61 грн |
ESDALD05UE2X |
Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.29 грн |
6000+ | 3.95 грн |
9000+ | 3.42 грн |
30000+ | 3.15 грн |
ESDALD05UE2X |
Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
на замовлення 78879 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
18+ | 16.09 грн |
100+ | 8.12 грн |
500+ | 6.21 грн |
1000+ | 4.61 грн |
ESDALD05UG4X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.55 грн |
6000+ | 4.19 грн |
9000+ | 3.62 грн |
30000+ | 3.33 грн |
75000+ | 2.76 грн |
ESDALD05UG4X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
на замовлення 88595 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.21 грн |
17+ | 17 грн |
100+ | 8.6 грн |
500+ | 6.58 грн |
1000+ | 4.88 грн |
NXPSC20650W-AQ |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 480 шт:
термін постачання 21-31 дні (днів)WNSC6D20650WQ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 526 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 430.78 грн |
10+ | 374.59 грн |
100+ | 310.12 грн |
500+ | 253.43 грн |
WNSC6D10650Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 213.23 грн |
10+ | 172.73 грн |
100+ | 139.74 грн |
500+ | 116.57 грн |
WNSC16650CWQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
WNSC2D16650CWQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товар відсутній
BTA308X-800C0,127 |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 16103 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 41.06 грн |
50+ | 33.09 грн |
100+ | 24.02 грн |
500+ | 18.83 грн |
1000+ | 16.03 грн |
2000+ | 14.28 грн |
5000+ | 13.3 грн |
10000+ | 12.32 грн |
NXPSC20650W6Q |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 577.73 грн |
10+ | 477.18 грн |
100+ | 397.65 грн |
500+ | 329.28 грн |
WNSC051200Q |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 65 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.08 грн |
10+ | 344.9 грн |
NXPSC08650B6J |
Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A D2PAK
Description: DIODE SCHOTTKY 650V 8A D2PAK
на замовлення 3165 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 365.22 грн |
10+ | 315.76 грн |
100+ | 258.75 грн |
BUJ303AX,127 |
Виробник: WeEn Semiconductors
Description: TRANS NPN 500V 5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Supplier Device Package: TO-220F
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 32 W
Description: TRANS NPN 500V 5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Supplier Device Package: TO-220F
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 32 W
на замовлення 7439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
908+ | 21.95 грн |
MCR100W-10MF |
Виробник: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
товар відсутній
MCR100W-10MF |
Виробник: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
товар відсутній
BYC30X-600PSQ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 23963 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.01 грн |
10+ | 88.51 грн |
100+ | 69.02 грн |
500+ | 53.51 грн |
1000+ | 42.24 грн |
2000+ | 41.01 грн |
BYC30JT-600PSQ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.98 грн |
10+ | 100.1 грн |
100+ | 78.06 грн |
500+ | 60.52 грн |
1000+ | 47.78 грн |
2000+ | 46.38 грн |
ESDALD05UJ2X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.79 грн |
6000+ | 6.4 грн |
9000+ | 5.67 грн |
30000+ | 5.25 грн |
ESDALD05UJ2X |
Виробник: WeEn Semiconductors
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
на замовлення 82513 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.26 грн |
14+ | 21.02 грн |
100+ | 10.6 грн |
500+ | 8.82 грн |
1000+ | 6.86 грн |
ACTT4S-800E,118 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
на замовлення 58852 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.87 грн |
10+ | 43.49 грн |
100+ | 30.11 грн |
500+ | 23.61 грн |
1000+ | 20.09 грн |
MUR560J |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 17293 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.53 грн |
12+ | 23.93 грн |
100+ | 16.66 грн |
500+ | 12.2 грн |
1000+ | 9.92 грн |
BYV10MX-600PQ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 12015 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.9 грн |
50+ | 29.44 грн |
100+ | 21.86 грн |
500+ | 16.02 грн |
1000+ | 13.02 грн |
2000+ | 11.64 грн |
5000+ | 10.87 грн |
10000+ | 10.09 грн |
ESDHD05UFX |
Виробник: WeEn Semiconductors
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
на замовлення 280000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.08 грн |
30000+ | 1.8 грн |
50000+ | 1.6 грн |
100000+ | 1.41 грн |
250000+ | 1.37 грн |
ESDHD05UFX |
Виробник: WeEn Semiconductors
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
на замовлення 298655 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.13 грн |
22+ | 13.11 грн |
100+ | 7.15 грн |
500+ | 4.13 грн |
1000+ | 2.82 грн |
2000+ | 2.39 грн |
5000+ | 2.12 грн |
WNSC2D16650CJQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2369 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 293.91 грн |
10+ | 237.52 грн |
100+ | 192.14 грн |
500+ | 160.29 грн |
1000+ | 137.24 грн |
2000+ | 129.23 грн |
BT151-650LTFQ |
Виробник: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
на замовлення 5498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.18 грн |
50+ | 30.08 грн |
100+ | 21.84 грн |
500+ | 17.12 грн |
1000+ | 14.57 грн |
2000+ | 12.98 грн |
5000+ | 12.09 грн |
BT151Y-650LTFQ |
Виробник: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.54 грн |
50+ | 38.1 грн |
100+ | 27.66 грн |
500+ | 21.69 грн |
1000+ | 18.46 грн |
2000+ | 16.44 грн |
5000+ | 15.32 грн |
BT134W-800EF |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 9.25 грн |
8000+ | 8.54 грн |
12000+ | 7.69 грн |
BT134W-800EF |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
на замовлення 23050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.58 грн |
11+ | 25.6 грн |
100+ | 15.37 грн |
500+ | 13.36 грн |
1000+ | 9.08 грн |
2000+ | 8.36 грн |
WNSC2D20650CJQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
480+ | 214.99 грн |
960+ | 177.27 грн |
2400+ | 166.91 грн |
WNSC2D20650CJQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)BYR29X-600,127 |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
556+ | 36.9 грн |
BYR29X-800,127 |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Description: DIODE GEN PURP 800V 8A TO220FP
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.56 грн |
10+ | 72 грн |
100+ | 56.18 грн |
500+ | 43.55 грн |
BYR29X-800PQ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
WNSC2D30650CWQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2697 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 447.35 грн |
30+ | 344.18 грн |
120+ | 307.95 грн |
510+ | 255 грн |
1020+ | 229.5 грн |
2010+ | 215.05 грн |
WNSC2D30650WQ |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE SCHOTTKY DI
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: SILICON CARBIDE SCHOTTKY DI
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1025 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 427.18 грн |
30+ | 328.2 грн |
120+ | 293.65 грн |
510+ | 243.16 грн |
1020+ | 218.84 грн |
NXPSC06650D6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Description: DIODE SIL CARBIDE 650V 6A DPAK
на замовлення 6834 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 258.61 грн |
10+ | 223.92 грн |
100+ | 183.43 грн |
500+ | 146.54 грн |
1000+ | 128.56 грн |
NXPSC08650X6Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 345.77 грн |
10+ | 299.25 грн |
100+ | 245.22 грн |
500+ | 195.9 грн |
1000+ | 171.86 грн |
NXPSC08650D6J |
Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A DPAK
Description: DIODE SCHOTTKY 650V 8A DPAK
на замовлення 7184 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 355.86 грн |
10+ | 308.06 грн |
100+ | 252.37 грн |
500+ | 201.62 грн |
1000+ | 176.88 грн |
NXPSC06650B6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK
Description: DIODE SIL CARBIDE 650V 6A D2PAK
на замовлення 3190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 267.25 грн |
10+ | 231.48 грн |
100+ | 189.65 грн |
NXPSC12650B6J |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 310.64 грн |
1600+ | 262.43 грн |
NXPSC12650B6J |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 6298 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 496.33 грн |
10+ | 428.83 грн |
100+ | 351.4 грн |
WNSC6D20650B6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 203.71 грн |
1600+ | 167.96 грн |
2400+ | 158.16 грн |
WNSC6D20650B6J |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 5108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 337.85 грн |
10+ | 272.83 грн |
100+ | 220.68 грн |
BTA202W-1000ETF |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 9.91 грн |
8000+ | 9.06 грн |
12000+ | 8.41 грн |
BTA202W-1000ETF |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 15950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.53 грн |
12+ | 24.21 грн |
100+ | 16.82 грн |
500+ | 12.33 грн |
1000+ | 10.02 грн |
2000+ | 8.96 грн |
BTA203-800ETQP |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 9.91 грн |
6000+ | 9.06 грн |
BTA203-800ETQP |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
на замовлення 9866 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.53 грн |
12+ | 24.21 грн |
100+ | 16.82 грн |
500+ | 12.33 грн |
1000+ | 10.02 грн |
BTA202-1000ETEP |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 9.41 грн |