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WNSC10650T6J WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 7214 шт:
термін постачання 21-31 дні (днів)
1+414.46 грн
10+ 358.37 грн
100+ 293.66 грн
500+ 234.6 грн
1000+ 197.85 грн
NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
1+422.99 грн
10+ 365.63 грн
100+ 299.58 грн
NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+397.4 грн
10+ 321 грн
100+ 259.7 грн
500+ 216.64 грн
1000+ 185.5 грн
2000+ 174.67 грн
NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
1+418.72 грн
10+ 362 грн
100+ 296.62 грн
500+ 236.97 грн
1000+ 199.85 грн
2000+ 189.86 грн
NXPSC10650Q NXPSC10650Q WeEn Semiconductors nxpsc10650.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 1941 шт:
термін постачання 21-31 дні (днів)
1+351.19 грн
10+ 284.1 грн
100+ 229.85 грн
500+ 191.73 грн
1000+ 164.17 грн
WNSC10650WQ WeEn Semiconductors WNSC10650W_0.pdf Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
NUR460/L03,112 NUR460/L03,112 WeEn Semiconductors NUR460.pdf Description: DIODE GEN PURP 600V 4A DO201AD
товар відсутній
NUR460P,133 NUR460P,133 WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L01U NUR460P/L01U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L02U NUR460P/L02U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L03U NUR460P/L03U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L04U NUR460P/L04U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L05U NUR460P/L05U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
товар відсутній
NUR460P/L06U NUR460P/L06U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L07U NUR460P/L07U WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460PU NUR460PU WeEn Semiconductors NUR460P.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товар відсутній
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors wns30h100cb.pdf Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors wns30h100cb.pdf Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
4+71.8 грн
10+ 56.34 грн
100+ 43.79 грн
Мінімальне замовлення: 4
WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+59.08 грн
Мінімальне замовлення: 2500
WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 7478 шт:
термін постачання 21-31 дні (днів)
3+98.82 грн
10+ 79.14 грн
100+ 63.01 грн
500+ 53.39 грн
Мінімальне замовлення: 3
WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товар відсутній
WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товар відсутній
OT415Q OT415Q WeEn Semiconductors Description: OT415/SIL3P/STANDARD MARKING *
на замовлення 4982 шт:
термін постачання 21-31 дні (днів)
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors wns20s100cb.pdf Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+24 грн
1600+ 19.66 грн
2400+ 17.51 грн
5600+ 15.57 грн
Мінімальне замовлення: 800
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors wns20s100cb.pdf Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 7054 шт:
термін постачання 21-31 дні (днів)
6+47.63 грн
10+ 39.98 грн
100+ 27.66 грн
Мінімальне замовлення: 6
WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors wns20h100cb.pdf Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
800+27.42 грн
1600+ 22.47 грн
2400+ 20.02 грн
5600+ 17.8 грн
Мінімальне замовлення: 800
WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors wns20h100cb.pdf Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 15098 шт:
термін постачання 21-31 дні (днів)
6+54.74 грн
10+ 45.66 грн
100+ 31.61 грн
Мінімальне замовлення: 6
WNS20S100CQ WNS20S100CQ WeEn Semiconductors wns20s100c.pdf Description: DIODE ARR SCHOTT 100V 10A TO220E
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220E
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 4911 шт:
термін постачання 21-31 дні (днів)
7+46.92 грн
50+ 37.01 грн
100+ 26.86 грн
500+ 21.06 грн
1000+ 17.93 грн
2000+ 15.97 грн
Мінімальне замовлення: 7
WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors wns40h100cb.pdf Description: DIODE ARR SCHOTT 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+55.82 грн
1600+ 43.79 грн
2400+ 41.22 грн
5600+ 36.84 грн
Мінімальне замовлення: 800
WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors wns40h100cb.pdf Description: DIODE ARR SCHOTT 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5652 шт:
термін постачання 21-31 дні (днів)
3+103.79 грн
10+ 81.53 грн
100+ 63.42 грн
Мінімальне замовлення: 3
BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors byv410x-600.pdf Description: DIODE ARRAY GP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 5973 шт:
термін постачання 21-31 дні (днів)
3+114.46 грн
10+ 91.66 грн
100+ 73 грн
500+ 57.96 грн
1000+ 49.18 грн
2000+ 46.72 грн
5000+ 44.23 грн
Мінімальне замовлення: 3
ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors actt4s-800e.pdf Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
2500+19.54 грн
5000+ 17.82 грн
12500+ 16.5 грн
25000+ 15.34 грн
Мінімальне замовлення: 2500
BYC75W-1200PQ WeEn Semiconductors byc75w-1200p.pdf Description: DIODE GEN PURP 1.2KV 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
1+397.4 грн
10+ 321 грн
100+ 259.7 грн
500+ 216.64 грн
BT234-800D,127 WeEn Semiconductors PHGL-S-A0001056936-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Description: NOW WEEN - BT234-800D - 4 QUADRA
товар відсутній
TOPT12-800C0,127 TOPT12-800C0,127 WeEn Semiconductors topt12-800c0.pdf Description: TRIAC 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 104A
Voltage - Gate Trigger (Vgt) (Max): 2.3 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
товар відсутній
TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Description: TOPT16-800C0,127 SIL3P
товар відсутній
ACTT6-800CNQ WeEn Semiconductors actt6-800cn.pdf Description: TRIAC SENS GATE 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
товар відсутній
WNSC04650T6J WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Description: SILICON CARBIDE POWER DIODE
товар відсутній
NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
на замовлення 3211 шт:
термін постачання 21-31 дні (днів)
1+541.71 грн
10+ 471.47 грн
100+ 390.32 грн
500+ 318.97 грн
1000+ 296.81 грн
NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Description: DIODE SIL CARBIDE 650V 6A D2PAK
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+165.45 грн
1600+ 139.78 грн
Мінімальне замовлення: 800
BT155W-1400TQ BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 715A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
на замовлення 898 шт:
термін постачання 21-31 дні (днів)
2+231.75 грн
10+ 187.5 грн
100+ 151.7 грн
500+ 126.54 грн
Мінімальне замовлення: 2
BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors bta330x-800bt.pdf Description: TRIAC 800V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 270A, 297A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
товар відсутній
NCR100Q-6MX WeEn Semiconductors NCR100Q-6M_0.pdf Description: SCR 600V 800MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 mA
Supplier Device Package: SOT-89
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товар відсутній
WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)
1+329.86 грн
30+ 252.06 грн
120+ 216.05 грн
WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)
1+538.15 грн
10+ 444.15 грн
100+ 370.12 грн
600+ 306.47 грн
1200+ 275.83 грн
WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Description: DIODE ARR SIC 1200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
товар відсутній
WNSC04650T6J WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Description: SILICON CARBIDE POWER DIODE
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
2+150.71 грн
10+ 130.34 грн
100+ 104.73 грн
500+ 80.75 грн
1000+ 67.2 грн
Мінімальне замовлення: 2
WNSC06650T6J WNSC06650T6J WeEn Semiconductors WNSC06650T.pdf Description: DIODE SIL CARBIDE 650V 6A 5DFN
на замовлення 2942 шт:
термін постачання 21-31 дні (днів)
2+204.74 грн
10+ 177.17 грн
100+ 142.43 грн
500+ 109.82 грн
1000+ 91.39 грн
Мінімальне замовлення: 2
WNSC08650T6J WNSC08650T6J WeEn Semiconductors WNSC08650T.pdf Description: SILICON CARBIDE POWER DIODE
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)
2+224.65 грн
10+ 194.69 грн
100+ 159.55 грн
500+ 127.46 грн
1000+ 111.82 грн
Мінімальне замовлення: 2
WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Description: DIODE SIL CARB 650V 12A TO247-2
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
2+272.99 грн
10+ 236.52 грн
100+ 193.82 грн
500+ 154.85 грн
1000+ 135.85 грн
Мінімальне замовлення: 2
BYV10ED-600PJ BYV10ED-600PJ WeEn Semiconductors byv10ed-600p.pdf Description: DIODE GEN PURP 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
6+54.74 грн
10+ 45.66 грн
100+ 31.61 грн
500+ 24.78 грн
1000+ 21.09 грн
Мінімальне замовлення: 6
BTA425Z-800BTQ BTA425Z-800BTQ WeEn Semiconductors BTA425Z-800BT.pdf Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 3110 шт:
термін постачання 21-31 дні (днів)
2+154.98 грн
30+ 119.82 грн
120+ 98.6 грн
510+ 78.3 грн
1020+ 66.44 грн
2010+ 63.11 грн
Мінімальне замовлення: 2
BYV29F-600,127 BYV29F-600,127 WeEn Semiconductors PHGLS22517-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 600V 9A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
756+25.99 грн
Мінімальне замовлення: 756
BYV30JT-600PQ WeEn Semiconductors byv30jt-600p.pdf Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3840 шт:
термін постачання 21-31 дні (днів)
2+142.89 грн
10+ 123.29 грн
100+ 99.13 грн
500+ 76.43 грн
1000+ 63.6 грн
Мінімальне замовлення: 2
BYV30W-600PQ WeEn Semiconductors byv30w-600p.pdf Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BYV30X-600PQ WeEn Semiconductors byv30x-600p.pdf Description: DIODE GEN PURP 600V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BTA208X-1000C0/L01127 BTA208X-1000C0/L01127 WeEn Semiconductors BTA208X-1000C0.pdf Description: NOW WEEN - BTA208X-1000C0 - 3 QU
Packaging: Bulk
Part Status: Active
товар відсутній
WDMF75M16T WeEn Semiconductors WDMF75M16.pdf Description: THREE PHASE RECTIFIER BRIDGE
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2344.56 грн
WNSC10650T6J WNSC10650T.pdf
WNSC10650T6J
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 7214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+414.46 грн
10+ 358.37 грн
100+ 293.66 грн
500+ 234.6 грн
1000+ 197.85 грн
NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+422.99 грн
10+ 365.63 грн
100+ 299.58 грн
NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+397.4 грн
10+ 321 грн
100+ 259.7 грн
500+ 216.64 грн
1000+ 185.5 грн
2000+ 174.67 грн
NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+418.72 грн
10+ 362 грн
100+ 296.62 грн
500+ 236.97 грн
1000+ 199.85 грн
2000+ 189.86 грн
NXPSC10650Q nxpsc10650.pdf
NXPSC10650Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 1941 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+351.19 грн
10+ 284.1 грн
100+ 229.85 грн
500+ 191.73 грн
1000+ 164.17 грн
WNSC10650WQ WNSC10650W_0.pdf
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
NUR460/L03,112 NUR460.pdf
NUR460/L03,112
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
товар відсутній
NUR460P,133 NUR460P.pdf
NUR460P,133
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L01U NUR460P.pdf
NUR460P/L01U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L02U NUR460P.pdf
NUR460P/L02U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L03U NUR460P.pdf
NUR460P/L03U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L04U NUR460P.pdf
NUR460P/L04U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L05U NUR460P.pdf
NUR460P/L05U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
товар відсутній
NUR460P/L06U NUR460P.pdf
NUR460P/L06U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460P/L07U NUR460P.pdf
NUR460P/L07U
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NUR460PU NUR460P.pdf
NUR460PU
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
NXPSC16650B6J NXPSC16650B6J.pdf
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товар відсутній
WNS30H100CBJ wns30h100cb.pdf
WNS30H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
WNS30H100CBJ wns30h100cb.pdf
WNS30H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+71.8 грн
10+ 56.34 грн
100+ 43.79 грн
Мінімальне замовлення: 4
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+59.08 грн
Мінімальне замовлення: 2500
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 7478 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+98.82 грн
10+ 79.14 грн
100+ 63.01 грн
500+ 53.39 грн
Мінімальне замовлення: 3
WNSC2D08650TJ WNSC2D08650T.pdf
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товар відсутній
WNSC2D08650TJ WNSC2D08650T.pdf
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товар відсутній
OT415Q
OT415Q
Виробник: WeEn Semiconductors
Description: OT415/SIL3P/STANDARD MARKING *
на замовлення 4982 шт:
термін постачання 21-31 дні (днів)
WNS20S100CBJ wns20s100cb.pdf
WNS20S100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+24 грн
1600+ 19.66 грн
2400+ 17.51 грн
5600+ 15.57 грн
Мінімальне замовлення: 800
WNS20S100CBJ wns20s100cb.pdf
WNS20S100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 7054 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+47.63 грн
10+ 39.98 грн
100+ 27.66 грн
Мінімальне замовлення: 6
WNS20H100CBJ wns20h100cb.pdf
WNS20H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+27.42 грн
1600+ 22.47 грн
2400+ 20.02 грн
5600+ 17.8 грн
Мінімальне замовлення: 800
WNS20H100CBJ wns20h100cb.pdf
WNS20H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 15098 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.74 грн
10+ 45.66 грн
100+ 31.61 грн
Мінімальне замовлення: 6
WNS20S100CQ wns20s100c.pdf
WNS20S100CQ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A TO220E
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220E
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 4911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+46.92 грн
50+ 37.01 грн
100+ 26.86 грн
500+ 21.06 грн
1000+ 17.93 грн
2000+ 15.97 грн
Мінімальне замовлення: 7
WNS40H100CBJ wns40h100cb.pdf
WNS40H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+55.82 грн
1600+ 43.79 грн
2400+ 41.22 грн
5600+ 36.84 грн
Мінімальне замовлення: 800
WNS40H100CBJ wns40h100cb.pdf
WNS40H100CBJ
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.79 грн
10+ 81.53 грн
100+ 63.42 грн
Мінімальне замовлення: 3
BYV410X-600,127 byv410x-600.pdf
BYV410X-600,127
Виробник: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 5973 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.46 грн
10+ 91.66 грн
100+ 73 грн
500+ 57.96 грн
1000+ 49.18 грн
2000+ 46.72 грн
5000+ 44.23 грн
Мінімальне замовлення: 3
ACTT4S-800E,118 actt4s-800e.pdf
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+19.54 грн
5000+ 17.82 грн
12500+ 16.5 грн
25000+ 15.34 грн
Мінімальне замовлення: 2500
BYC75W-1200PQ byc75w-1200p.pdf
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+397.4 грн
10+ 321 грн
100+ 259.7 грн
500+ 216.64 грн
BT234-800D,127 PHGL-S-A0001056936-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Виробник: WeEn Semiconductors
Description: NOW WEEN - BT234-800D - 4 QUADRA
товар відсутній
TOPT12-800C0,127 topt12-800c0.pdf
TOPT12-800C0,127
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 104A
Voltage - Gate Trigger (Vgt) (Max): 2.3 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
товар відсутній
TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Виробник: WeEn Semiconductors
Description: TOPT16-800C0,127 SIL3P
товар відсутній
ACTT6-800CNQ actt6-800cn.pdf
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
товар відсутній
WNSC04650T6J WNSC04650T.pdf
WNSC04650T6J
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
товар відсутній
NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
на замовлення 3211 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+541.71 грн
10+ 471.47 грн
100+ 390.32 грн
500+ 318.97 грн
1000+ 296.81 грн
NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+165.45 грн
1600+ 139.78 грн
Мінімальне замовлення: 800
BT155W-1400TQ BT155W-1400T.pdf
BT155W-1400TQ
Виробник: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 715A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
на замовлення 898 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+231.75 грн
10+ 187.5 грн
100+ 151.7 грн
500+ 126.54 грн
Мінімальне замовлення: 2
BTA330X-800BTQ bta330x-800bt.pdf
BTA330X-800BTQ
Виробник: WeEn Semiconductors
Description: TRIAC 800V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 270A, 297A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
товар відсутній
NCR100Q-6MX NCR100Q-6M_0.pdf
Виробник: WeEn Semiconductors
Description: SCR 600V 800MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 mA
Supplier Device Package: SOT-89
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товар відсутній
WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+329.86 грн
30+ 252.06 грн
120+ 216.05 грн
WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+538.15 грн
10+ 444.15 грн
100+ 370.12 грн
600+ 306.47 грн
1200+ 275.83 грн
WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
товар відсутній
WNSC04650T6J WNSC04650T.pdf
WNSC04650T6J
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+150.71 грн
10+ 130.34 грн
100+ 104.73 грн
500+ 80.75 грн
1000+ 67.2 грн
Мінімальне замовлення: 2
WNSC06650T6J WNSC06650T.pdf
WNSC06650T6J
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
на замовлення 2942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+204.74 грн
10+ 177.17 грн
100+ 142.43 грн
500+ 109.82 грн
1000+ 91.39 грн
Мінімальне замовлення: 2
WNSC08650T6J WNSC08650T.pdf
WNSC08650T6J
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+224.65 грн
10+ 194.69 грн
100+ 159.55 грн
500+ 127.46 грн
1000+ 111.82 грн
Мінімальне замовлення: 2
WNSC12650WQ WNSC12650W_2.pdf
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 12A TO247-2
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+272.99 грн
10+ 236.52 грн
100+ 193.82 грн
500+ 154.85 грн
1000+ 135.85 грн
Мінімальне замовлення: 2
BYV10ED-600PJ byv10ed-600p.pdf
BYV10ED-600PJ
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.74 грн
10+ 45.66 грн
100+ 31.61 грн
500+ 24.78 грн
1000+ 21.09 грн
Мінімальне замовлення: 6
BTA425Z-800BTQ BTA425Z-800BT.pdf
BTA425Z-800BTQ
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 3110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+154.98 грн
30+ 119.82 грн
120+ 98.6 грн
510+ 78.3 грн
1020+ 66.44 грн
2010+ 63.11 грн
Мінімальне замовлення: 2
BYV29F-600,127 PHGLS22517-1.pdf?t.download=true&u=5oefqw
BYV29F-600,127
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 9A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
756+25.99 грн
Мінімальне замовлення: 756
BYV30JT-600PQ byv30jt-600p.pdf
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+142.89 грн
10+ 123.29 грн
100+ 99.13 грн
500+ 76.43 грн
1000+ 63.6 грн
Мінімальне замовлення: 2
BYV30W-600PQ byv30w-600p.pdf
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BYV30X-600PQ byv30x-600p.pdf
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BTA208X-1000C0/L01127 BTA208X-1000C0.pdf
BTA208X-1000C0/L01127
Виробник: WeEn Semiconductors
Description: NOW WEEN - BTA208X-1000C0 - 3 QU
Packaging: Bulk
Part Status: Active
товар відсутній
WDMF75M16T WDMF75M16.pdf
Виробник: WeEn Semiconductors
Description: THREE PHASE RECTIFIER BRIDGE
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2344.56 грн
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