Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6043) > Сторінка 16 з 101
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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ACTT4S-800E,118 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
на замовлення 38254 шт: термін постачання 21-31 дні (днів) |
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MUR560J | WeEn Semiconductors |
Description: DIODE STANDARD 600V 5A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 64 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYV10MX-600PQ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 10A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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ESDHD05UFX | WeEn Semiconductors |
Description: TVS DIODE 5VWM 16VC DFN10062Power Line Protection: No Power - Peak Pulse: 320W Voltage - Clamping (Max) @ Ipp: 16V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 20A (8/20µs) Capacitance @ Frequency: 150pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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ESDHD05UFX | WeEn Semiconductors |
Description: TVS DIODE 5VWM 16VC DFN10062Part Status: Active Power Line Protection: No Power - Peak Pulse: 320W Voltage - Clamping (Max) @ Ipp: 16V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 20A (8/20µs) Capacitance @ Frequency: 150pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Cut Tape (CT) |
на замовлення 296652 шт: термін постачання 21-31 дні (днів) |
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WNSC2D16650CJQ | WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 16A TO-3PFPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 449 шт: термін постачання 21-31 дні (днів) |
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BT151-650LTFQ | WeEn Semiconductors |
Description: SCR 650V 12A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
на замовлення 4768 шт: термін постачання 21-31 дні (днів) |
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BT151Y-650LTFQ | WeEn Semiconductors |
Description: SCR 650V 12A TO-220ABPackaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
на замовлення 5972 шт: термін постачання 21-31 дні (днів) |
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BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 20A TO-3PFCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-3PF Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||
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WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 20A TO-3PFCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-3PF Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYR29X-600,127 | WeEn Semiconductors |
Description: DIODE STANDARD 600V 8A TO220FPCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-220FP Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BYR29X-800,127 | WeEn Semiconductors |
Description: DIODE STANDARD 800V 8A TO220FPCurrent - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-220FP Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 4767 шт: термін постачання 21-31 дні (днів) |
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| BYR29X-800PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 800V 8A TO220FPCurrent - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220FP Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
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WNSC2D30650CWQ | WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 30A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2218 шт: термін постачання 21-31 дні (днів) |
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WNSC2D30650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 30A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 980pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650D6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK |
на замовлення 6834 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650X6Q | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650D6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 4684 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A D2PAK |
на замовлення 3190 шт: термін постачання 21-31 дні (днів) |
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NXPSC12650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 12A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 4518 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 8515 шт: термін постачання 21-31 дні (днів) |
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BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
на замовлення 9760 шт: термін постачання 21-31 дні (днів) |
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BTA202-1000ETEP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BTA202-1000ETEP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 9960 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000CTF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BTA202W-1000CTF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 15399 шт: термін постачання 21-31 дні (днів) |
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BTA202-1000CTQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BTA202-1000CTQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 2943 шт: термін постачання 21-31 дні (днів) |
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ACTT12B-800CTNJ | WeEn Semiconductors |
Description: TRIAC 800V 12A D2PAKCurrent - Hold (Ih) (Max): 30 mA Operating Temperature: 150°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12 A Supplier Device Package: D2PAK Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - Gate Trigger (Igt) (Max): 35 mA |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
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ACTT12B-800CJ | WeEn Semiconductors |
Description: ACTT12B-800C/D2PAK/REEL 13" Q1 |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
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ACTT12B-800CTJ | WeEn Semiconductors |
Description: TRIAC 800V 12A D2PAKVoltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12 A Supplier Device Package: D2PAK Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 50 mA Operating Temperature: 150°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
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BTA202-1000ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BTA312X-800C/L02Q | WeEn Semiconductors |
Description: TRIAC 800V 12A TO220FConfiguration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Packaging: Tube Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12 A Part Status: Active Supplier Device Package: TO-220F Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 35 mA Operating Temperature: 125°C (TJ) |
на замовлення 7131 шт: термін постачання 21-31 дні (днів) |
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TYN20Y-600TFQ | WeEn Semiconductors |
Description: SCR 600V 20A TO-220ABVoltage - Off State: 600 V Current - On State (It (RMS)) (Max): 20 A Part Status: Active Supplier Device Package: TO-220AB Current - Off State (Max): 10 µA Voltage - On State (Vtm) (Max): 1.6 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 12.7 A Current - Non Rep. Surge 50, 60Hz (Itsm): 225A, 248A Current - Gate Trigger (Igt) (Max): 10 mA Current - Hold (Ih) (Max): 40 mA Operating Temperature: 150°C (TJ) SCR Type: Standard Recovery Package / Case: TO-220-3 Isolated Tab Packaging: Tube Mounting Type: Through Hole |
на замовлення 2735 шт: термін постачання 21-31 дні (днів) |
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BTA312G-600CTQ | WeEn Semiconductors |
Description: TRIAC 600V 12A I2PAKPackaging: Tube Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 12 A Part Status: Active Supplier Device Package: TO-262 (I2PAK) Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 35 mA Operating Temperature: 150°C (TJ) Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA |
на замовлення 11662 шт: термін постачання 21-31 дні (днів) |
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TYN16Y-600CTFQ | WeEn Semiconductors |
Description: SCR 600V 16A TO-220ABPackaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 188A, 207A Current - On State (It (AV)) (Max): 10.2 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
на замовлення 5740 шт: термін постачання 21-31 дні (днів) |
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BUJ302A,127 | WeEn Semiconductors |
Description: TRANS NPN 400V 4A TO-220ABPower - Max: 80 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-220AB DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V Current - Collector Cutoff (Max): 250mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
на замовлення 1825 шт: термін постачання 21-31 дні (днів) |
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WNSC6D166506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 16A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 2976 шт: термін постачання 21-31 дні (днів) |
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WN3S40100CQ | WeEn Semiconductors |
Description: DIODE ARR SCHOT 100V 20A TO220ABCurrent - Reverse Leakage @ Vr: 50 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 16A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 16A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 1863 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650CW6Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 16A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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NXPLQSC20650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 20A TO247-3Current - Reverse Leakage @ Vr: 230 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TYN50W-1400TQ | WeEn Semiconductors |
Description: SCR 1.4KV 79A TO-247EPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 650A @ 50Hz, 715A @ 60Hz Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-247E Part Status: Active Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.4 kV |
на замовлення 551 шт: термін постачання 21-31 дні (днів) |
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BTA202X-1000CTQ | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 5991 шт: термін постачання 21-31 дні (днів) |
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BYQ60W-600PT2Q | WeEn Semiconductors |
Description: DIODE STANDARD 600V 60A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 569 шт: термін постачання 21-31 дні (днів) |
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BYV60W-600PQ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 60A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 4037 шт: термін постачання 21-31 дні (днів) |
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WNSC2D10650BJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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WNSC2D10650BJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 8768 шт: термін постачання 21-31 дні (днів) |
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WNSC2D10650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WN3S40H100CXQ | WeEn Semiconductors |
Description: DIODE ARR SCHOTT 100V 20A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 4571 шт: термін постачання 21-31 дні (днів) |
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ESDUD05BFX | WeEn Semiconductors |
Description: TVS DIODE 5VWM 22VC DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 88W Power Line Protection: No Part Status: Active |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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ESDUD05BFX | WeEn Semiconductors |
Description: TVS DIODE 5VWM 22VC DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 88W Power Line Protection: No Part Status: Active |
на замовлення 155386 шт: термін постачання 21-31 дні (днів) |
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WNSC2D301200CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 1200V 30A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| ACTT4S-800E,118 |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
на замовлення 38254 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 56.58 грн |
| 100+ | 37.38 грн |
| 500+ | 27.32 грн |
| 1000+ | 24.82 грн |
| MUR560J |
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Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STANDARD 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BYV10MX-600PQ |
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Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| ESDHD05UFX |
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Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC DFN10062
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Capacitance @ Frequency: 150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TVS DIODE 5VWM 16VC DFN10062
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Capacitance @ Frequency: 150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.49 грн |
| 20000+ | 1.31 грн |
| 30000+ | 1.24 грн |
| 50000+ | 1.16 грн |
| ESDHD05UFX |
![]() |
Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC DFN10062
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Capacitance @ Frequency: 150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 16VC DFN10062
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Capacitance @ Frequency: 150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
на замовлення 296652 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.48 грн |
| 41+ | 7.56 грн |
| 100+ | 4.67 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.80 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.08 грн |
| WNSC2D16650CJQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARRAY SIC 650V 16A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 409.15 грн |
| 30+ | 221.84 грн |
| 120+ | 183.92 грн |
| BT151-650LTFQ |
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Виробник: WeEn Semiconductors
Description: SCR 650V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: SCR 650V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
на замовлення 4768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.57 грн |
| 10+ | 42.53 грн |
| 100+ | 27.78 грн |
| 500+ | 20.11 грн |
| 1000+ | 18.19 грн |
| 2000+ | 16.57 грн |
| BT151Y-650LTFQ |
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Виробник: WeEn Semiconductors
Description: SCR 650V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: SCR 650V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
на замовлення 5972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.05 грн |
| 10+ | 50.62 грн |
| 100+ | 33.33 грн |
| 500+ | 24.30 грн |
| 1000+ | 22.05 грн |
| 2000+ | 20.17 грн |
| BT134W-800EF |
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Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| BT134W-800EF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.75 грн |
| 11+ | 30.24 грн |
| 100+ | 19.42 грн |
| WNSC2D20650CJQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| WNSC2D20650CJQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BYR29X-600,127 |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Bulk
Description: DIODE STANDARD 600V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 456+ | 44.89 грн |
| BYR29X-800,127 |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 800V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE STANDARD 800V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 4767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.85 грн |
| 50+ | 35.08 грн |
| 100+ | 34.99 грн |
| 500+ | 31.70 грн |
| 1000+ | 31.10 грн |
| BYR29X-800PQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE GEN PURP 800V 8A TO220FP
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FP
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| WNSC2D30650CWQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARRAY SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 552.67 грн |
| 30+ | 309.45 грн |
| 120+ | 260.48 грн |
| 510+ | 215.14 грн |
| WNSC2D30650WQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 534.43 грн |
| 30+ | 298.07 грн |
| 120+ | 250.58 грн |
| NXPSC06650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Description: DIODE SIL CARBIDE 650V 6A DPAK
на замовлення 6834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.66 грн |
| 10+ | 246.48 грн |
| 100+ | 201.91 грн |
| 500+ | 161.30 грн |
| 1000+ | 141.51 грн |
| NXPSC08650X6Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 430.56 грн |
| 50+ | 218.00 грн |
| 100+ | 199.01 грн |
| 500+ | 155.59 грн |
| 1000+ | 145.57 грн |
| NXPSC08650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 4684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.33 грн |
| 10+ | 250.22 грн |
| 100+ | 179.70 грн |
| 500+ | 140.42 грн |
| 1000+ | 134.46 грн |
| NXPSC06650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK
Description: DIODE SIL CARBIDE 650V 6A D2PAK
на замовлення 3190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.18 грн |
| 10+ | 254.80 грн |
| 100+ | 208.75 грн |
| NXPSC12650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| WNSC6D20650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 172.16 грн |
| WNSC6D20650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 4518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.26 грн |
| 10+ | 251.90 грн |
| 100+ | 187.70 грн |
| BTA202W-1000ETF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 12.02 грн |
| 8000+ | 11.34 грн |
| BTA202W-1000ETF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 8515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.29 грн |
| 100+ | 21.45 грн |
| 500+ | 15.34 грн |
| BTA203-800ETQP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| BTA203-800ETQP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
на замовлення 9760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.29 грн |
| 100+ | 21.45 грн |
| 500+ | 15.34 грн |
| 1000+ | 13.80 грн |
| BTA202-1000ETEP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 11.77 грн |
| BTA202-1000ETEP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 9960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.29 грн |
| 100+ | 21.45 грн |
| 500+ | 15.34 грн |
| 1000+ | 13.80 грн |
| 2000+ | 12.50 грн |
| BTA202W-1000CTF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 12.02 грн |
| 8000+ | 11.34 грн |
| BTA202W-1000CTF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 15399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.29 грн |
| 100+ | 21.45 грн |
| 500+ | 15.34 грн |
| 1000+ | 13.80 грн |
| 2000+ | 12.50 грн |
| BTA202-1000CTQP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| BTA202-1000CTQP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 2943 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.75 грн |
| 11+ | 30.08 грн |
| 100+ | 19.35 грн |
| 500+ | 13.81 грн |
| ACTT12B-800CTNJ |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A D2PAK
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - Gate Trigger (Igt) (Max): 35 mA
Description: TRIAC 800V 12A D2PAK
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - Gate Trigger (Igt) (Max): 35 mA
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику
од. на суму грн.
| ACTT12B-800CJ |
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Виробник: WeEn Semiconductors
Description: ACTT12B-800C/D2PAK/REEL 13" Q1
Description: ACTT12B-800C/D2PAK/REEL 13" Q1
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику
од. на суму грн.
| ACTT12B-800CTJ |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A D2PAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: TRIAC 800V 12A D2PAK
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Supplier Device Package: D2PAK
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику
од. на суму грн.
| BTA202-1000ETQP |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 11.77 грн |
| BTA312X-800C/L02Q |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A TO220F
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Packaging: Tube
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: TO-220F
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: 125°C (TJ)
Description: TRIAC 800V 12A TO220F
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Packaging: Tube
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: TO-220F
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: 125°C (TJ)
на замовлення 7131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.63 грн |
| 10+ | 80.48 грн |
| 100+ | 54.23 грн |
| 600+ | 39.36 грн |
| 1200+ | 37.57 грн |
| TYN20Y-600TFQ |
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Виробник: WeEn Semiconductors
Description: SCR 600V 20A TO-220AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 20 A
Part Status: Active
Supplier Device Package: TO-220AB
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 12.7 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 225A, 248A
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 40 mA
Operating Temperature: 150°C (TJ)
SCR Type: Standard Recovery
Package / Case: TO-220-3 Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
Description: SCR 600V 20A TO-220AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 20 A
Part Status: Active
Supplier Device Package: TO-220AB
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 12.7 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 225A, 248A
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Hold (Ih) (Max): 40 mA
Operating Temperature: 150°C (TJ)
SCR Type: Standard Recovery
Package / Case: TO-220-3 Isolated Tab
Packaging: Tube
Mounting Type: Through Hole
на замовлення 2735 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.46 грн |
| 50+ | 47.98 грн |
| 100+ | 42.76 грн |
| 500+ | 31.51 грн |
| 1000+ | 28.73 грн |
| 2000+ | 26.40 грн |
| BTA312G-600CTQ |
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Виробник: WeEn Semiconductors
Description: TRIAC 600V 12A I2PAK
Packaging: Tube
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Description: TRIAC 600V 12A I2PAK
Packaging: Tube
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 35 mA
Operating Temperature: 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
на замовлення 11662 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.97 грн |
| 10+ | 69.94 грн |
| 100+ | 46.78 грн |
| 500+ | 34.57 грн |
| 1000+ | 31.56 грн |
| 2000+ | 31.14 грн |
| TYN16Y-600CTFQ |
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Виробник: WeEn Semiconductors
Description: SCR 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 188A, 207A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: SCR 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 188A, 207A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 5740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 50+ | 38.18 грн |
| 100+ | 33.89 грн |
| 500+ | 24.74 грн |
| 1000+ | 22.47 грн |
| 2000+ | 20.55 грн |
| 5000+ | 18.18 грн |
| BUJ302A,127 |
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Виробник: WeEn Semiconductors
Description: TRANS NPN 400V 4A TO-220AB
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
Current - Collector Cutoff (Max): 250mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN 400V 4A TO-220AB
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
Current - Collector Cutoff (Max): 250mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 644+ | 31.95 грн |
| WNSC6D166506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 2976 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 363.16 грн |
| 10+ | 232.81 грн |
| 100+ | 166.34 грн |
| 500+ | 150.53 грн |
| WN3S40100CQ |
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Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOT 100V 20A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 100V 20A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.78 грн |
| 50+ | 34.62 грн |
| 100+ | 31.15 грн |
| 500+ | 23.36 грн |
| 1000+ | 21.43 грн |
| 2000+ | 19.80 грн |
| WNSC6D16650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 170.84 грн |
| WNSC6D16650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.43 грн |
| 10+ | 256.48 грн |
| 100+ | 183.45 грн |
| WNSC6D16650CW6Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.19 грн |
| 10+ | 245.48 грн |
| 240+ | 171.71 грн |
| NXPLQSC20650WQ |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-3
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: DIODE SIL CARB 650V 20A TO247-3
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TYN50W-1400TQ |
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Виробник: WeEn Semiconductors
Description: SCR 1.4KV 79A TO-247E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A @ 50Hz, 715A @ 60Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247E
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
Description: SCR 1.4KV 79A TO-247E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A @ 50Hz, 715A @ 60Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247E
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.49 грн |
| 30+ | 136.12 грн |
| 120+ | 111.26 грн |
| 510+ | 87.30 грн |
| BTA202X-1000CTQ |
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Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 5991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.78 грн |
| 10+ | 41.54 грн |
| 100+ | 27.12 грн |
| 500+ | 19.62 грн |
| 1000+ | 17.74 грн |
| 2000+ | 16.15 грн |
| 5000+ | 15.17 грн |
| BYQ60W-600PT2Q |
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Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 60A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 60A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.98 грн |
| 10+ | 149.51 грн |
| 100+ | 108.30 грн |
| BYV60W-600PQ |
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Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 60A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 60A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4037 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.97 грн |
| 10+ | 187.15 грн |
| 100+ | 132.21 грн |
| 600+ | 114.39 грн |
| WNSC2D10650BJ |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 82.60 грн |
| WNSC2D10650BJ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 8768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.36 грн |
| 10+ | 158.21 грн |
| 100+ | 110.68 грн |
| WNSC2D10650WQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| WN3S40H100CXQ |
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Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 4571 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.28 грн |
| 50+ | 57.59 грн |
| 100+ | 51.39 грн |
| 500+ | 38.01 грн |
| 1000+ | 34.72 грн |
| 2000+ | 31.95 грн |
| ESDUD05BFX |
![]() |
Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 22VC DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 88W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 22VC DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 88W
Power Line Protection: No
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.80 грн |
| 20000+ | 3.37 грн |
| 30000+ | 3.22 грн |
| 50000+ | 2.87 грн |
| 70000+ | 2.77 грн |
| 100000+ | 2.73 грн |
| ESDUD05BFX |
![]() |
Виробник: WeEn Semiconductors
Description: TVS DIODE 5VWM 22VC DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 88W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 22VC DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 88W
Power Line Protection: No
Part Status: Active
на замовлення 155386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 22+ | 14.13 грн |
| 100+ | 8.84 грн |
| 500+ | 6.13 грн |
| 1000+ | 5.43 грн |
| 2000+ | 4.84 грн |
| 5000+ | 4.13 грн |
| WNSC2D301200CWQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.


























