Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5984) > Сторінка 14 з 100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT79X-600PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 15A TO220FPPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BYT79B-600PJ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 15A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
MAC223A8X,127 | WeEn Semiconductors |
Description: TRIAC 600V 20A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 230A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 20 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TYN80W-1600TQ | WeEn Semiconductors |
Description: SCR 1.6KV 126A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 930A Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.47 V Current - Off State (Max): 10 mA Supplier Device Package: TO-247-3 Part Status: Active Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MCR08BT1,115 | WeEn Semiconductors |
Description: SCR 200V 800MA SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 200 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BT168E,112 | WeEn Semiconductors |
Description: SCR 500V 800MA TO-92-3Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Sensitive Gate Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BT300S-600R,118 | WeEn Semiconductors |
Description: SCR 600V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A Current - On State (It (AV)) (Max): 5 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 500 µA Supplier Device Package: DPAK Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| OB2001/001V | WeEn Semiconductors | Description: OB2001/001/UNCASED/NO MARK*CHI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| OB2004V | WeEn Semiconductors | Description: OB2004/UNCASED/NO MARK*CHIPS O |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| OB2003/001V | WeEn Semiconductors | Description: OB2003/001V/NAU000/NO MARK*CHIPS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| OP526,005 | WeEn Semiconductors |
Description: OP526/UNCASED/NO MARK*CHIPS ON Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MCR08BT1,115 | WeEn Semiconductors |
Description: SCR 200V 800MA SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 200 V |
на замовлення 8598 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ACT108-600D,412 | WeEn Semiconductors |
Description: TRIAC SENS GATE 600V 0.8A TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A Voltage - Gate Trigger (Vgt) (Max): 900 mV Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
на замовлення 19820 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BT136B-600E118 | WeEn Semiconductors |
Description: NOW WEEN - BT136B-600E - 4 QUADRPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT137-600G0127 | WeEn Semiconductors |
Description: NOW WEEN - BT137-600G0 - 4 QUADRPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BTA410-800CT,127 | WeEn Semiconductors |
Description: TRIAC 800V 10A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 800 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
ACTT2X-800E/DGQ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14A, 15.4A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
на замовлення 11975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BYR29-600,127 | WeEn Semiconductors |
Description: DIODE STANDARD 600V 8A TO220ACPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 4744 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BYV29D-600PJ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 9A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BYV29D-600PJ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 9A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 11790 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BT153B-1200T-AJ | WeEn Semiconductors |
Description: SCR 1.2KV 47A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 80 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 2 mA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT153B-1200T-AJ | WeEn Semiconductors |
Description: SCR 1.2KV 47A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 80 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 2 mA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT137B-800G,118 | WeEn Semiconductors |
Description: TRIAC 800V 8A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT137B-800G,118 | WeEn Semiconductors |
Description: TRIAC 800V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NCR125W-125MX | WeEn Semiconductors |
Description: SCR 1.25KV 1.25A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 100 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1.25 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NXPSC10650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BTA2008W-800D,135 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 0.8A SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BTA2008W-800D,135 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 0.8A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 7227 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BTA204X-800C/L03Q | WeEn Semiconductors |
Description: TRIAC 800V 4A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BTA206X-800CT/L03Q | WeEn Semiconductors |
Description: TRIAC 800V 6A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 3593 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BYC405X-400PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 400V 10A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NXPSC04650D6J | WeEn Semiconductors |
Description: DIODE SCHOTTKY 650V 4A DPAK |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC04650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC06650D6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC08650D6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC046506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 4A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 20200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC04650X6Q | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 2826 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC10650D6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC08650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| WNSC021200Q | WeEn Semiconductors |
Description: SILICON CARBIDE POWER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
|
|
NXPSC066506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NXPSC06650X6Q | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC086506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NXPSC166506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 16A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 534pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
EC103D1WX | WeEn Semiconductors |
Description: SCR 400V 800MA SC-73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 12 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.35 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
EC103D1WX | WeEn Semiconductors |
Description: SCR 400V 800MA SC-73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 12 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.35 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
на замовлення 15558 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BYC60W-600PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 60A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2437 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BYC20D-600PQ | WeEn Semiconductors |
Description: DIODE STANDARD 600V 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ACT108W-800EF | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 0.8A SC73Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
ACT108W-800EF | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 0.8A SC73Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 6076 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TYN16S-600CTJ | WeEn Semiconductors |
Description: SCR 600V 16A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 6 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A Current - On State (It (AV)) (Max): 10.2 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 1 mA Supplier Device Package: DPAK Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NCR100-8LR | WeEn Semiconductors |
Description: SCR 600V 800MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SOT-23-3L Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NCR100-8MR | WeEn Semiconductors |
Description: SCR 600V 800MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 100 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SOT-23-3L Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NXPSC126506Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 12A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
WNSC06650T6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
WNSC08650T6J | WeEn Semiconductors |
Description: SILICON CARBIDE POWER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
WNSC10650T6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BTA416X-800BTQ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 16A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 5659 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BTA416X-800CTQ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 16A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 6774 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BYC30-600P,127 | WeEn Semiconductors |
Description: DIODE STANDARD 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
на замовлення 7879 шт: термін постачання 21-31 дні (днів) |
|
| BYT79X-600PQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.48 грн |
| 50+ | 48.94 грн |
| 100+ | 44.15 грн |
| 500+ | 33.38 грн |
| 1000+ | 30.74 грн |
| BYT79B-600PJ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MAC223A8X,127 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 230A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 20 A
Voltage - Off State: 600 V
Description: TRIAC 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 230A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 20 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| TYN80W-1600TQ |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 1.6KV 126A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 930A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 126A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 930A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| MCR08BT1,115 |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 200V 800MA SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
Description: SCR 200V 800MA SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 11.71 грн |
| 2000+ | 10.15 грн |
| 3000+ | 9.58 грн |
| 5000+ | 8.39 грн |
| 7000+ | 8.03 грн |
| BT168E,112 |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 500V 800MA TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 500 V
Description: SCR 500V 800MA TO-92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 500 V
товару немає в наявності
В кошику
од. на суму грн.
| BT300S-600R,118 |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 500 µA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: SCR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 500 µA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| OB2001/001V |
Виробник: WeEn Semiconductors
Description: OB2001/001/UNCASED/NO MARK*CHI
Description: OB2001/001/UNCASED/NO MARK*CHI
товару немає в наявності
В кошику
од. на суму грн.
| OB2004V |
Виробник: WeEn Semiconductors
Description: OB2004/UNCASED/NO MARK*CHIPS O
Description: OB2004/UNCASED/NO MARK*CHIPS O
товару немає в наявності
В кошику
од. на суму грн.
| OB2003/001V |
Виробник: WeEn Semiconductors
Description: OB2003/001V/NAU000/NO MARK*CHIPS
Description: OB2003/001V/NAU000/NO MARK*CHIPS
товару немає в наявності
В кошику
од. на суму грн.
| MCR08BT1,115 |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 200V 800MA SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
Description: SCR 200V 800MA SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
на замовлення 8598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.61 грн |
| 13+ | 26.25 грн |
| 100+ | 16.74 грн |
| 500+ | 11.83 грн |
| ACT108-600D,412 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 600V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 900 mV
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 900 mV
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 19820 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2108+ | 11.03 грн |
| BT136B-600E118 |
![]() |
Виробник: WeEn Semiconductors
Description: NOW WEEN - BT136B-600E - 4 QUADR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW WEEN - BT136B-600E - 4 QUADR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BT137-600G0127 |
![]() |
Виробник: WeEn Semiconductors
Description: NOW WEEN - BT137-600G0 - 4 QUADR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW WEEN - BT137-600G0 - 4 QUADR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BTA410-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Description: TRIAC 800V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 422+ | 50.28 грн |
| ACTT2X-800E/DGQ |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14A, 15.4A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14A, 15.4A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
на замовлення 11975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.04 грн |
| 50+ | 41.84 грн |
| 100+ | 30.37 грн |
| 500+ | 23.81 грн |
| 1000+ | 20.27 грн |
| 2000+ | 18.05 грн |
| 5000+ | 16.82 грн |
| 10000+ | 15.57 грн |
| BYR29-600,127 |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 534+ | 39.43 грн |
| BYV29D-600PJ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.79 грн |
| BYV29D-600PJ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 11790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.52 грн |
| 10+ | 37.31 грн |
| 100+ | 28.21 грн |
| 500+ | 20.42 грн |
| 1000+ | 18.47 грн |
| BT153B-1200T-AJ |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 1.2KV 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику
од. на суму грн.
| BT153B-1200T-AJ |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 1.2KV 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику
од. на суму грн.
| BT137B-800G,118 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC 800V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BT137B-800G,118 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC 800V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| NCR125W-125MX |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 1.25KV 1.25A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1.25 kV
Description: SCR 1.25KV 1.25A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1.25 kV
товару немає в наявності
В кошику
од. на суму грн.
| NXPSC10650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 196.82 грн |
| BTA2008W-800D,135 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 13.27 грн |
| BTA2008W-800D,135 |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 7227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.83 грн |
| 10+ | 34.60 грн |
| 100+ | 22.39 грн |
| 500+ | 16.06 грн |
| 1000+ | 14.47 грн |
| 2000+ | 13.12 грн |
| BTA204X-800C/L03Q |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BTA206X-800CT/L03Q |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 3593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.39 грн |
| 50+ | 34.57 грн |
| 100+ | 31.09 грн |
| 500+ | 23.29 грн |
| 1000+ | 21.35 грн |
| 2000+ | 19.71 грн |
| BYC405X-400PQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 400V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| NXPSC04650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A DPAK
Description: DIODE SCHOTTKY 650V 4A DPAK
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 110.80 грн |
| NXPSC04650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 90.40 грн |
| 1600+ | 86.05 грн |
| NXPSC06650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Description: DIODE SIL CARBIDE 650V 6A DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 163.14 грн |
| NXPSC08650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 168.02 грн |
| NXPSC046506Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 20200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.87 грн |
| 50+ | 117.02 грн |
| 100+ | 106.85 грн |
| 500+ | 83.31 грн |
| 1000+ | 78.29 грн |
| NXPSC04650X6Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 2826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.87 грн |
| 50+ | 117.02 грн |
| 100+ | 106.85 грн |
| 500+ | 83.31 грн |
| 1000+ | 78.29 грн |
| NXPSC10650D6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 192.92 грн |
| NXPSC08650B6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 213.67 грн |
| 1600+ | 176.18 грн |
| 2400+ | 165.89 грн |
| WNSC021200Q |
![]() |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NXPSC066506Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.61 грн |
| 10+ | 252.41 грн |
| 100+ | 206.80 грн |
| 500+ | 165.22 грн |
| 1000+ | 139.34 грн |
| 2000+ | 132.37 грн |
| NXPSC06650X6Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.78 грн |
| 10+ | 268.16 грн |
| 100+ | 219.69 грн |
| 500+ | 175.51 грн |
| 1000+ | 153.97 грн |
| NXPSC086506Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 349.44 грн |
| 10+ | 282.56 грн |
| 100+ | 228.63 грн |
| 500+ | 190.71 грн |
| 1000+ | 163.30 грн |
| 2000+ | 153.76 грн |
| NXPSC166506Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 484.09 грн |
| 50+ | 268.88 грн |
| 100+ | 249.04 грн |
| 500+ | 216.60 грн |
| EC103D1WX |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 400V 800MA SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 10.46 грн |
| 2000+ | 9.07 грн |
| 3000+ | 8.56 грн |
| 5000+ | 7.49 грн |
| 7000+ | 7.17 грн |
| 10000+ | 6.86 грн |
| EC103D1WX |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 400V 800MA SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
на замовлення 15558 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.65 грн |
| 14+ | 23.47 грн |
| 100+ | 14.95 грн |
| 500+ | 10.57 грн |
| BYC60W-600PQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.04 грн |
| 30+ | 126.91 грн |
| 120+ | 111.83 грн |
| BYC20D-600PQ |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| ACT108W-800EF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| ACT108W-800EF |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 6076 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.09 грн |
| 11+ | 30.63 грн |
| 100+ | 20.87 грн |
| 500+ | 15.40 грн |
| 1000+ | 14.02 грн |
| 2000+ | 12.84 грн |
| TYN16S-600CTJ |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 600V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 6 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 1 mA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: SCR 600V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 6 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 1 mA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| NCR100-8LR |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| NCR100-8MR |
![]() |
Виробник: WeEn Semiconductors
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| NXPSC126506Q |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 470.05 грн |
| 10+ | 379.93 грн |
| 100+ | 307.35 грн |
| 500+ | 256.39 грн |
| WNSC06650T6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| WNSC08650T6J |
![]() |
Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| WNSC10650T6J |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| BTA416X-800BTQ |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 5659 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.09 грн |
| 50+ | 47.33 грн |
| 100+ | 42.14 грн |
| 500+ | 30.99 грн |
| 1000+ | 28.23 грн |
| 2000+ | 25.91 грн |
| 5000+ | 23.02 грн |
| BTA416X-800CTQ |
![]() |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 6774 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.09 грн |
| 50+ | 47.33 грн |
| 100+ | 42.14 грн |
| 500+ | 30.99 грн |
| 1000+ | 28.23 грн |
| 2000+ | 25.91 грн |
| 5000+ | 23.02 грн |
| BYC30-600P,127 |
![]() |
Виробник: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 7879 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.78 грн |
| 50+ | 122.52 грн |
| 100+ | 110.80 грн |
| 500+ | 84.70 грн |
| 1000+ | 78.50 грн |
| 2000+ | 73.72 грн |













SOT223-1.jpg)











