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AOD8N25 AOD8N25 Alpha & Omega Semiconductor Inc. AOD8N25.pdf Description: MOSFET N CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
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AOD8N25 AOD8N25 Alpha & Omega Semiconductor Inc. AOD8N25.pdf Description: MOSFET N CH 250V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
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AOD950A70 AOD950A70 Alpha & Omega Semiconductor Inc. AOD950A70.pdf Description: MOSFET N-CH 700V 5A TO252
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AOD950A70 AOD950A70 Alpha & Omega Semiconductor Inc. AOD950A70.pdf Description: MOSFET N-CH 700V 5A TO252
на замовлення 2326 шт:
термін постачання 21-31 дні (днів)
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AOD9N40 AOD9N40 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2111 Description: MOSFET N CH 400V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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AOD9N40 AOD9N40 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2111 Description: MOSFET N CH 400V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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AOD9N50 AOD9N50 Alpha & Omega Semiconductor Inc. AOD9N50.pdf Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 7146 шт:
термін постачання 21-31 дні (днів)
3+121.76 грн
10+74.26 грн
100+49.66 грн
500+36.70 грн
1000+33.52 грн
Мінімальне замовлення: 3
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AOD9N50 AOD9N50 Alpha & Omega Semiconductor Inc. AOD9N50.pdf Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+29.73 грн
Мінімальне замовлення: 2500
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AOD9T40P AOD9T40P Alpha & Omega Semiconductor Inc. AOD9T40P.pdf Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOD9T40P AOD9T40P Alpha & Omega Semiconductor Inc. AOD9T40P.pdf Description: MOSFET N-CH
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOD9T40P AOD9T40P Alpha & Omega Semiconductor Inc. AOD9T40P.pdf Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOE66410 Alpha & Omega Semiconductor Inc. AOE66410.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
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AOE6930 AOE6930 Alpha & Omega Semiconductor Inc. AOE6930.pdf Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2014 шт:
термін постачання 21-31 дні (днів)
2+224.42 грн
10+140.24 грн
100+96.83 грн
500+73.47 грн
1000+67.87 грн
Мінімальне замовлення: 2
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AOE6930 AOE6930 Alpha & Omega Semiconductor Inc. AOE6930.pdf Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOE6932 AOE6932 Alpha & Omega Semiconductor Inc. AOE6932.pdf Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOE6932 AOE6932 Alpha & Omega Semiconductor Inc. AOE6932.pdf Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2922 шт:
термін постачання 21-31 дні (днів)
3+117.78 грн
10+93.80 грн
100+74.70 грн
500+59.32 грн
1000+50.33 грн
Мінімальне замовлення: 3
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AOE6936 AOE6936 Alpha & Omega Semiconductor Inc. AOE6936.pdf Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2039 шт:
термін постачання 21-31 дні (днів)
3+153.59 грн
10+94.26 грн
100+63.78 грн
500+47.63 грн
1000+43.69 грн
Мінімальне замовлення: 3
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AOE6936 AOE6936 Alpha & Omega Semiconductor Inc. AOE6936.pdf Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOGF20D65L1L Alpha & Omega Semiconductor Inc. AOGF20D65L1L.pdf Description: LINEAR IC
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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AOGF30D65L1L Alpha & Omega Semiconductor Inc. AOGF30D65L1L.pdf Description: LINEAR IC
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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AOH3106 AOH3106 Alpha & Omega Semiconductor Inc. AOH3106.pdf Description: MOSFET N-CH 100V 2A SOT223
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AOH3110 AOH3110 Alpha & Omega Semiconductor Inc. AOH3110.pdf Description: MOSFET N-CH 100V 1A SOT223
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AOH3110 AOH3110 Alpha & Omega Semiconductor Inc. AOH3110.pdf Description: MOSFET N-CH 100V 1A SOT223
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AOH3110 AOH3110 Alpha & Omega Semiconductor Inc. AOH3110.pdf Description: MOSFET N-CH 100V 1A SOT223
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AOH3254 AOH3254 Alpha & Omega Semiconductor Inc. AOH3254.pdf Description: MOSFET N-CH 150V 5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
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AOI11S60 AOI11S60 Alpha & Omega Semiconductor Inc. AOI11S60.pdf Description: MOSFET N-CH 600V 11A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
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AOI1N60 AOI1N60 Alpha & Omega Semiconductor Inc. AOI1N60.pdf Description: MOSFET N-CH 600V 1.3A TO251A
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AOI1N60L AOI1N60L Alpha & Omega Semiconductor Inc. AOI1N60.pdf Description: MOSFET N-CH 600V 1.3A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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AOI1R4A70 Alpha & Omega Semiconductor Inc. AOI1R4A70.pdf Description: MOSFET N-CH 700V 3.8A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
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AOI206_002 Alpha & Omega Semiconductor Inc. AOD206,%20AOI206%20Datasheet.pdf Description: MOSFET N-CH 30V 18A TO251A
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AOI208 AOI208 Alpha & Omega Semiconductor Inc. AOI208.pdf Description: MOSFET N-CH 30V 18A TO251A
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AOI21357 AOI21357 Alpha & Omega Semiconductor Inc. AOI21357.pdf Description: MOSFET P-CH 30V 23A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
5+78.79 грн
70+33.23 грн
140+29.54 грн
560+22.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOI2210 AOI2210 Alpha & Omega Semiconductor Inc. AOI2210.pdf Description: MOSFET N-CH 200V 3A/18A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V
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AOI2606 AOI2606 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 60V 14A/46A TO251A
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AOI2610 AOI2610 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 60V 10A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
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AOI2610E AOI2610E Alpha & Omega Semiconductor Inc. AOI2610E.pdf Description: MOSFET N-CH 60V 46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251A
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В кошику  од. на суму  грн.
AOI2614 AOI2614 Alpha & Omega Semiconductor Inc. Description: MOSFET NCH 60V 35A TO251A
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AOI2N60 AOI2N60 Alpha & Omega Semiconductor Inc. AOI2N60.pdf Description: MOSFET N-CH 600V 2A TO251A
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AOI2N60A AOI2N60A Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 600V 2A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
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AOI360A70 AOI360A70 Alpha & Omega Semiconductor Inc. AOD360A70.pdf Description: MOSFET N-CH 700V 12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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В кошику  од. на суму  грн.
AOI380A60C AOI380A60C Alpha & Omega Semiconductor Inc. AOI380A60C.pdf Description: MOSFET N-CH 600V 11A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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AOI403 AOI403 Alpha & Omega Semiconductor Inc. AOI403.pdf Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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AOI409 AOI409 Alpha & Omega Semiconductor Inc. AOI409.pdf Description: MOSFET P-CH 60V 26A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
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AOI4102 AOI4102 Alpha & Omega Semiconductor Inc. AOI4102.pdf Description: MOSFET N-CH 30V 8A TO251A
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В кошику  од. на суму  грн.
AOI4126 AOI4126 Alpha & Omega Semiconductor Inc. AOI4126.pdf Description: MOSFET N-CH 100V 7.5A/43A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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В кошику  од. на суму  грн.
AOI4130 AOI4130 Alpha & Omega Semiconductor Inc. AOI4130.pdf Description: MOSFET N-CH 60V 6.5A TO251A
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AOI4144_002 Alpha & Omega Semiconductor Inc. AO(D,I,U)4144.pdf Description: MOSFET N-CH
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AOI4146 AOI4146 Alpha & Omega Semiconductor Inc. AOI4146.pdf Description: MOSFET N-CH 30V 15A TO251A
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AOI418 AOI418 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 30V 13.5A/36A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
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AOI4184 AOI4184 Alpha & Omega Semiconductor Inc. AOI4184.pdf Description: MOSFET N-CH 40V 12A/50A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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В кошику  од. на суму  грн.
AOI4185 AOI4185 Alpha & Omega Semiconductor Inc. AOI4185.pdf Description: MOSFET P-CH 40V 40A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
AOI423 AOI423 Alpha & Omega Semiconductor Inc. AOD423.pdf Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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В кошику  од. на суму  грн.
AOI4286 AOI4286 Alpha & Omega Semiconductor Inc. AOI4286.pdf Description: MOSFET N-CH 100V 4A/14A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
на замовлення 10254 шт:
термін постачання 21-31 дні (днів)
8+43.77 грн
70+34.49 грн
140+25.03 грн
560+19.62 грн
1050+16.70 грн
2030+14.88 грн
5040+13.86 грн
10010+12.83 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AOI442 AOI442 Alpha & Omega Semiconductor Inc. AOI442.pdf Description: MOSFET N-CH 60V 7A TO251A
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AOI444 AOI444 Alpha & Omega Semiconductor Inc. AOI444.pdf Description: MOSFET N-CH 60V 4A/12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
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AOI468 AOI468 Alpha & Omega Semiconductor Inc. AOI468.pdf Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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AOI472A AOI472A Alpha & Omega Semiconductor Inc. TO251A.pdf Description: MOSFET N-CH 25V 18A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V
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AOI482 AOI482 Alpha & Omega Semiconductor Inc. AOI482.pdf Description: MOSFET N-CH 100V 5A/32A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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AOI4C60 AOI4C60 Alpha & Omega Semiconductor Inc. AOD_I4C60.pdf Description: MOSFET N-CH 600V 4A TO-252
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AOI4N60 AOI4N60 Alpha & Omega Semiconductor Inc. AOI4N60.pdf Description: MOSFET N-CH 600V 4A TO251A
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AOD8N25 AOD8N25.pdf
AOD8N25
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
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AOD8N25 AOD8N25.pdf
AOD8N25
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 250V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
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AOD950A70 AOD950A70.pdf
AOD950A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 5A TO252
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AOD950A70 AOD950A70.pdf
AOD950A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 5A TO252
на замовлення 2326 шт:
термін постачання 21-31 дні (днів)
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AOD9N40 combine-support-documents?resources=2111
AOD9N40
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 400V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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AOD9N40 combine-support-documents?resources=2111
AOD9N40
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 400V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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AOD9N50 AOD9N50.pdf
AOD9N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 7146 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.76 грн
10+74.26 грн
100+49.66 грн
500+36.70 грн
1000+33.52 грн
Мінімальне замовлення: 3
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AOD9N50 AOD9N50.pdf
AOD9N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.73 грн
Мінімальне замовлення: 2500
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AOD9T40P AOD9T40P.pdf
AOD9T40P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOD9T40P AOD9T40P.pdf
AOD9T40P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOD9T40P AOD9T40P.pdf
AOD9T40P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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AOE66410 AOE66410.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
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AOE6930 AOE6930.pdf
AOE6930
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2014 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+224.42 грн
10+140.24 грн
100+96.83 грн
500+73.47 грн
1000+67.87 грн
Мінімальне замовлення: 2
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AOE6930 AOE6930.pdf
AOE6930
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOE6932 AOE6932.pdf
AOE6932
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOE6932 AOE6932.pdf
AOE6932
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.78 грн
10+93.80 грн
100+74.70 грн
500+59.32 грн
1000+50.33 грн
Мінімальне замовлення: 3
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AOE6936 AOE6936.pdf
AOE6936
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2039 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.59 грн
10+94.26 грн
100+63.78 грн
500+47.63 грн
1000+43.69 грн
Мінімальне замовлення: 3
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AOE6936 AOE6936.pdf
AOE6936
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOGF20D65L1L AOGF20D65L1L.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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AOGF30D65L1L AOGF30D65L1L.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
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AOH3106 AOH3106.pdf
AOH3106
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 2A SOT223
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AOH3110 AOH3110.pdf
AOH3110
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 1A SOT223
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AOH3110 AOH3110.pdf
AOH3110
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 1A SOT223
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AOH3110 AOH3110.pdf
AOH3110
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 1A SOT223
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AOH3254 AOH3254.pdf
AOH3254
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
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AOI11S60 AOI11S60.pdf
AOI11S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
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AOI1N60 AOI1N60.pdf
AOI1N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO251A
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AOI1N60L AOI1N60.pdf
AOI1N60L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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AOI1R4A70 AOI1R4A70.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 3.8A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
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AOI206_002 AOD206,%20AOI206%20Datasheet.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A TO251A
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AOI208 AOI208.pdf
AOI208
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A TO251A
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AOI21357 AOI21357.pdf
AOI21357
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 23A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.79 грн
70+33.23 грн
140+29.54 грн
560+22.34 грн
Мінімальне замовлення: 5
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AOI2210 AOI2210.pdf
AOI2210
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 3A/18A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V
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AOI2606
AOI2606
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 14A/46A TO251A
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AOI2610
AOI2610
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 10A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
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AOI2610E AOI2610E.pdf
AOI2610E
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251A
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AOI2614
AOI2614
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET NCH 60V 35A TO251A
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AOI2N60 AOI2N60.pdf
AOI2N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 2A TO251A
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AOI2N60A AOSGreenPolicy.pdf
AOI2N60A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 2A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
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AOI360A70 AOD360A70.pdf
AOI360A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AOI380A60C AOI380A60C.pdf
AOI380A60C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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AOI403 AOI403.pdf
AOI403
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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AOI409 AOI409.pdf
AOI409
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 26A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
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AOI4102 AOI4102.pdf
AOI4102
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A TO251A
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AOI4126 AOI4126.pdf
AOI4126
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 7.5A/43A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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AOI4130 AOI4130.pdf
AOI4130
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 6.5A TO251A
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AOI4144_002 AO(D,I,U)4144.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
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AOI4146 AOI4146.pdf
AOI4146
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A TO251A
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AOI418 AOSGreenPolicy.pdf
AOI418
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/36A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
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AOI4184 AOI4184.pdf
AOI4184
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A/50A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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AOI4185 AOI4185.pdf
AOI4185
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
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AOI423 AOD423.pdf
AOI423
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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AOI4286 AOI4286.pdf
AOI4286
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
на замовлення 10254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.77 грн
70+34.49 грн
140+25.03 грн
560+19.62 грн
1050+16.70 грн
2030+14.88 грн
5040+13.86 грн
10010+12.83 грн
Мінімальне замовлення: 8
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AOI442 AOI442.pdf
AOI442
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A TO251A
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AOI444 AOI444.pdf
AOI444
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
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AOI468 AOI468.pdf
AOI468
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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AOI472A TO251A.pdf
AOI472A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 18A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V
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AOI482 AOI482.pdf
AOI482
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/32A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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AOI4C60 AOD_I4C60.pdf
AOI4C60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO-252
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AOI4N60 AOI4N60.pdf
AOI4N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO251A
товару немає в наявності
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