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MBRTA80045 MBRTA80045 GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045L MBRTA80045L GeneSiC Semiconductor mbrta80045(r)l.pdf Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045R MBRTA80045R GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045RL MBRTA80045RL GeneSiC Semiconductor mbrta80045(r)l.pdf Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80060 MBRTA80060 GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 60V 400A 3TOWER
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MBRTA80060R MBRTA80060R GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 60V 400A 3TOWER
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MBRTA80080 MBRTA80080 GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 80V 400A 3TOWER
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MBRTA80080R MBRTA80080R GeneSiC Semiconductor mbrta80045_thru_mbrta800100r.pdf Description: DIODE SCHOTTKY 80V 400A 3TOWER
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MURF30005 GeneSiC Semiconductor Description: DIODE GEN PURP 50V 150A TO244
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MURF30005R GeneSiC Semiconductor Description: DIODE GEN PURP 50V 150A TO244
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MURF30010 GeneSiC Semiconductor Description: DIODE GEN PURP 100V 150A TO244
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MURF30010R GeneSiC Semiconductor Description: DIODE GEN PURP 100V 150A TO244
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MURF30020 GeneSiC Semiconductor Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF30020R GeneSiC Semiconductor Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF30040 GeneSiC Semiconductor Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF30040R GeneSiC Semiconductor Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF30060 GeneSiC Semiconductor Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF30060R GeneSiC Semiconductor Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF40005 GeneSiC Semiconductor Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURF40005R GeneSiC Semiconductor Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURF40010 GeneSiC Semiconductor Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURF40010R GeneSiC Semiconductor Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURF40020 GeneSiC Semiconductor Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF40020R GeneSiC Semiconductor Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF40040 GeneSiC Semiconductor Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF40040R GeneSiC Semiconductor Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF40060 GeneSiC Semiconductor Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF40060R GeneSiC Semiconductor Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7005 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7005R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7010 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7010R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7040 GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7040R GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7060 GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060R GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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UFT10005 UFT10005 GeneSiC Semiconductor uft10005_thru_uft10060.pdf Description: DIODE GEN PURP 50V 50A TO249AB
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UFT10010 UFT10010 GeneSiC Semiconductor uft10005_thru_uft10060.pdf Description: DIODE GEN PURP 100V 50A TO249AB
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UFT10020 UFT10020 GeneSiC Semiconductor uft10005_thru_uft10060.pdf Description: DIODE GEN PURP 200V 50A TO249AB
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UFT10040 UFT10040 GeneSiC Semiconductor uft10005_thru_uft10060.pdf Description: DIODE GEN PURP 400V 50A TO249AB
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UFT10060 UFT10060 GeneSiC Semiconductor uft10005_thru_uft10060.pdf Description: DIODE GEN PURP 600V 50A TO249AB
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UFT14005 UFT14005 GeneSiC Semiconductor uft14005_thru_uft14060.pdf Description: DIODE GEN PURP 50V 70A TO249AB
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UFT14010 UFT14010 GeneSiC Semiconductor Description: DIODE GEN PURP 100V 70A TO249AB
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UFT14040 UFT14040 GeneSiC Semiconductor uft14005_thru_uft14060.pdf Description: DIODE GEN PURP 400V 70A TO249AB
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UFT14060 UFT14060 GeneSiC Semiconductor uft14005_thru_uft14060.pdf Description: DIODE GEN PURP 600V 70A TO249AB
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UFT7340M UFT7340M GeneSiC Semiconductor uft7340m_thru_uft7360m.pdf Description: DIODE GEN PURP 400V 70A D61-3M
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UFT7360M UFT7360M GeneSiC Semiconductor uft7340m_thru_uft7360m.pdf Description: DIODE GEN PURP 600V 70A D61-3M
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GB01SLT12-252 GB01SLT12-252 GeneSiC Semiconductor GB01SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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GC02MPS12-220 GC02MPS12-220 GeneSiC Semiconductor GC02MPS12-220.pdf Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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GC2X5MPS12-247 GC2X5MPS12-247 GeneSiC Semiconductor GC2X5MPS12-247.pdf Description: DIODE ARR SIC 1200V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
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GC2X8MPS12-247 GC2X8MPS12-247 GeneSiC Semiconductor GC2X8MPS12-247.pdf Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
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GC08MPS12-220 GC08MPS12-220 GeneSiC Semiconductor GC08MPS12-220.pdf Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
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GC2X10MPS12-247 GC2X10MPS12-247 GeneSiC Semiconductor GC2X10MPS12-247.pdf Description: DIODE ARR SIC 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-220 GC10MPS12-220 GeneSiC Semiconductor GC10MPS12-220.pdf Description: DIODE SIL CARB 1200V 54A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-252 GC10MPS12-252 GeneSiC Semiconductor GC10MPS12-252.pdf Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-252 GC10MPS12-252 GeneSiC Semiconductor GC10MPS12-252.pdf Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC2X15MPS12-247 GC2X15MPS12-247 GeneSiC Semiconductor GC2X15MPS12-247.pdf Description: DIODE ARR SIC 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC15MPS12-247 GC15MPS12-247 GeneSiC Semiconductor GC15MPS12-247.pdf Description: DIODE SIL CARB 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC15MPS12-220 GC15MPS12-220 GeneSiC Semiconductor GC15MPS12-220.pdf Description: DIODE SIL CARB 1200V 82A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC20MPS12-220 GC20MPS12-220 GeneSiC Semiconductor GC20MPS12-220.pdf Description: DIODE SIL CARB 1200V 94A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
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MBRTA80045 mbrta80045_thru_mbrta800100r.pdf
MBRTA80045
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045L mbrta80045(r)l.pdf
MBRTA80045L
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045R mbrta80045_thru_mbrta800100r.pdf
MBRTA80045R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80045RL mbrta80045(r)l.pdf
MBRTA80045RL
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
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MBRTA80060 mbrta80045_thru_mbrta800100r.pdf
MBRTA80060
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
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MBRTA80060R mbrta80045_thru_mbrta800100r.pdf
MBRTA80060R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
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MBRTA80080 mbrta80045_thru_mbrta800100r.pdf
MBRTA80080
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
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MBRTA80080R mbrta80045_thru_mbrta800100r.pdf
MBRTA80080R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
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MURF30005
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
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MURF30005R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
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MURF30010
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
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MURF30010R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
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MURF30020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF30020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF30040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF30040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF30060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF30060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF40005
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURF40005R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURF40010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURF40010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURF40020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF40020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURF40040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF40040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURF40060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURF40060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7005 murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7005R murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7010 murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7010R murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7040 murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7040R murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7060 murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060R murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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UFT10005 uft10005_thru_uft10060.pdf
UFT10005
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 50A TO249AB
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UFT10010 uft10005_thru_uft10060.pdf
UFT10010
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A TO249AB
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UFT10020 uft10005_thru_uft10060.pdf
UFT10020
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A TO249AB
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UFT10040 uft10005_thru_uft10060.pdf
UFT10040
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 50A TO249AB
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UFT10060 uft10005_thru_uft10060.pdf
UFT10060
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 50A TO249AB
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UFT14005 uft14005_thru_uft14060.pdf
UFT14005
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A TO249AB
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UFT14010
UFT14010
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A TO249AB
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UFT14040 uft14005_thru_uft14060.pdf
UFT14040
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A TO249AB
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UFT14060 uft14005_thru_uft14060.pdf
UFT14060
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A TO249AB
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UFT7340M uft7340m_thru_uft7360m.pdf
UFT7340M
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D61-3M
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UFT7360M uft7340m_thru_uft7360m.pdf
UFT7360M
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D61-3M
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GB01SLT12-252 GB01SLT12-252.pdf
GB01SLT12-252
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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GC02MPS12-220 GC02MPS12-220.pdf
GC02MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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GC2X5MPS12-247 GC2X5MPS12-247.pdf
GC2X5MPS12-247
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
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GC2X8MPS12-247 GC2X8MPS12-247.pdf
GC2X8MPS12-247
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
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GC08MPS12-220 GC08MPS12-220.pdf
GC08MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
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GC2X10MPS12-247 GC2X10MPS12-247.pdf
GC2X10MPS12-247
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-220 GC10MPS12-220.pdf
GC10MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 54A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-252 GC10MPS12-252.pdf
GC10MPS12-252
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC10MPS12-252 GC10MPS12-252.pdf
GC10MPS12-252
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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GC2X15MPS12-247 GC2X15MPS12-247.pdf
GC2X15MPS12-247
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC15MPS12-247 GC15MPS12-247.pdf
GC15MPS12-247
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC15MPS12-220 GC15MPS12-220.pdf
GC15MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 82A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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GC20MPS12-220 GC20MPS12-220.pdf
GC20MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 94A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
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