Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148446) > Сторінка 218 з 2475
Фото | Назва | Виробник | Інформація |
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BGA824N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.3V Gain: 17dB Current - Supply: 3.8mA Noise Figure: 0.55dB P1dB: -9dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 |
на замовлення 13193 шт: термін постачання 21-31 дні (днів) |
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD101B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V (Typ) Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 42858 шт: термін постачання 21-31 дні (днів) |
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ESD103B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.13pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 21V (Typ) Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Part Status: Not For New Designs |
на замовлення 6571 шт: термін постачання 21-31 дні (днів) |
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ESD105B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 31443 шт: термін постачання 21-31 дні (днів) |
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ESD112B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 67405 шт: термін постачання 21-31 дні (днів) |
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ESD113B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI Capacitance @ Frequency: 0.22pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 33219 шт: термін постачання 21-31 дні (днів) |
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ESD203B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 13.2V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.7V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 115W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD207B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 14pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD208B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 77469 шт: термін постачання 21-31 дні (днів) |
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BGT24MR2E6327XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Receiver Frequency: 24GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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BGT24MTR11E6327XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 26GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
на замовлення 6806 шт: термін постачання 21-31 дні (днів) |
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BGT24MTR12E6327XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 24.25GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
на замовлення 1991 шт: термін постачання 21-31 дні (днів) |
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BFR720L3RHE6327XTSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAR6402ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAR6402ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 18073 шт: термін постачання 21-31 дні (днів) |
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BAR9002ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz Resistance @ If, F: 800mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 210000 шт: термін постачання 21-31 дні (днів) |
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SPP04N60C3XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY7C65213-28PVXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Function: Bridge, USB to UART Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 28-SSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1149 шт: термін постачання 21-31 дні (днів) |
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BTN8982TAAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 50A Current - Peak Output: 117A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BTN8962TAAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 30A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTN8982TAAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 50A Current - Peak Output: 117A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
на замовлення 6509 шт: термін постачання 21-31 дні (днів) |
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BTN8962TAAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 30A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
на замовлення 3617 шт: термін постачання 21-31 дні (днів) |
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IRFB7537PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
на замовлення 311 шт: термін постачання 21-31 дні (днів) |
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IRFB7540PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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IRFB7546PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 2481 шт: термін постачання 21-31 дні (днів) |
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IRFP7530PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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IRFP7537PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 172A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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IRFS7530-7PPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS7530PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS7534-7PPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS7534PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS7530TRL7PP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IRFS7530TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
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IRFS7537TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IRFS7540TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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XMC1302T016X0032AAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 11x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 11 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XMC1302T016X0032AAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 11x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 11 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSP318SH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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6ED003L02F2XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 13V ~ 17.5V Input Type: Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8664 шт: термін постачання 21-31 дні (днів) |
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6EDL04N02PRXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BSC022N04LSATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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6ED003L02F2XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 13V ~ 17.5V Input Type: Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10242 шт: термін постачання 21-31 дні (днів) |
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6EDL04N02PRXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 15551 шт: термін постачання 21-31 дні (днів) |
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BSC022N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BGA715N7E6327XTSA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.3V Gain: 20dB Current - Supply: 3.3mA Noise Figure: 0.7dB Test Frequency: 1.575GHz Supplier Device Package: TSNP-7-1 Part Status: Not For New Designs |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BGA715N7E6327XTSA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.3V Gain: 20dB Current - Supply: 3.3mA Noise Figure: 0.7dB Test Frequency: 1.575GHz Supplier Device Package: TSNP-7-1 Part Status: Not For New Designs |
на замовлення 15529 шт: термін постачання 21-31 дні (днів) |
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AUIRF8736M2TR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AUIRFP4568 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 386 шт: термін постачання 21-31 дні (днів) |
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AUIRFS8407-7P | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: PG-TO263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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IRAC27951SR | Infineon Technologies |
![]() Packaging: Box Voltage - Output: 24V Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V Current - Output: 10A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: IR11682, IRS27951 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary and Secondary Side Outputs and Type: 1 Isolated Output Part Status: Active Power - Output: 240W Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
IRAM256-1567A2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 15 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRAM630-1562F2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRAMS10UP60B-S | Infineon Technologies |
![]() Packaging: Tube Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Mounting Type: Through Hole Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRAMS10UP60B-W | Infineon Technologies |
![]() Packaging: Tube Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Mounting Type: Through Hole Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRAMT20TP60A | Infineon Technologies |
![]() Packaging: Tube Package / Case: Module Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFB7740PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFH8201TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFH8202TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. |
BGA824N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
на замовлення 13193 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.16 грн |
10+ | 38.47 грн |
25+ | 36.26 грн |
100+ | 31.15 грн |
250+ | 29.42 грн |
500+ | 28.20 грн |
1000+ | 26.60 грн |
5000+ | 24.20 грн |
BGSF18DM20E6727XUMA1 |
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Виробник: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Description: IC SWITCH SP8T HP SPI 20SMD
товару немає в наявності
В кошику
од. на суму грн.
ESD101B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 30VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 42858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.87 грн |
19+ | 16.48 грн |
100+ | 7.07 грн |
500+ | 6.40 грн |
1000+ | 6.17 грн |
2000+ | 6.10 грн |
5000+ | 5.91 грн |
ESD103B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 15VWM 48V PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 6571 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.24 грн |
28+ | 11.34 грн |
100+ | 8.41 грн |
500+ | 7.43 грн |
1000+ | 6.57 грн |
2000+ | 6.37 грн |
5000+ | 6.07 грн |
ESD105B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 31443 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.67 грн |
21+ | 14.94 грн |
100+ | 6.61 грн |
500+ | 6.01 грн |
1000+ | 5.75 грн |
ESD112B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 67405 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.83 грн |
17+ | 19.01 грн |
100+ | 12.02 грн |
500+ | 8.44 грн |
1000+ | 7.52 грн |
2000+ | 6.75 грн |
5000+ | 5.81 грн |
ESD113B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 33219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.63 грн |
15+ | 21.30 грн |
100+ | 11.17 грн |
500+ | 8.88 грн |
1000+ | 6.83 грн |
2000+ | 6.80 грн |
5000+ | 5.94 грн |
ESD203B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
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од. на суму грн.
ESD207B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
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В кошику
од. на суму грн.
ESD208B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 77469 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.06 грн |
20+ | 15.94 грн |
100+ | 10.03 грн |
500+ | 6.99 грн |
1000+ | 6.21 грн |
2000+ | 5.55 грн |
5000+ | 4.75 грн |
BGT24MR2E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 724.98 грн |
10+ | 525.32 грн |
25+ | 482.21 грн |
100+ | 408.02 грн |
BGT24MTR11E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 6806 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1052.06 грн |
10+ | 799.06 грн |
25+ | 745.49 грн |
100+ | 644.40 грн |
250+ | 618.08 грн |
500+ | 602.22 грн |
BGT24MTR12E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 1991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1290.01 грн |
10+ | 985.81 грн |
25+ | 921.84 грн |
100+ | 799.13 грн |
250+ | 767.67 грн |
500+ | 748.72 грн |
BFR720L3RHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Description: TRANS RF NPN 4V 20MA TSLP-3
товару немає в наявності
В кошику
од. на суму грн.
BGSF18DM20E6727XUMA1 |
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Виробник: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Description: IC SWITCH SP8T HP SPI 20SMD
товару немає в наявності
В кошику
од. на суму грн.
BAR6402ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику
од. на суму грн.
BAR6402ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 18073 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.14 грн |
42+ | 7.36 грн |
48+ | 6.47 грн |
100+ | 5.13 грн |
250+ | 4.69 грн |
500+ | 4.42 грн |
1000+ | 4.13 грн |
2500+ | 3.90 грн |
5000+ | 3.77 грн |
BAR9002ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15000+ | 4.13 грн |
30000+ | 3.89 грн |
45000+ | 3.84 грн |
75000+ | 3.56 грн |
105000+ | 3.53 грн |
150000+ | 3.50 грн |
SPP04N60C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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CY7C65213-28PVXI |
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Виробник: Infineon Technologies
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1149 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 256.25 грн |
10+ | 185.38 грн |
47+ | 161.73 грн |
141+ | 140.91 грн |
282+ | 135.59 грн |
517+ | 131.72 грн |
1034+ | 125.93 грн |
BTN8982TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 242.68 грн |
2000+ | 228.62 грн |
3000+ | 226.08 грн |
BTN8962TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 223.31 грн |
2000+ | 210.30 грн |
3000+ | 207.93 грн |
BTN8982TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 6509 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 420.19 грн |
10+ | 309.52 грн |
25+ | 285.84 грн |
100+ | 243.79 грн |
250+ | 232.13 грн |
500+ | 225.10 грн |
BTN8962TAAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
на замовлення 3617 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 389.15 грн |
10+ | 285.92 грн |
25+ | 263.74 грн |
100+ | 224.68 грн |
250+ | 213.78 грн |
500+ | 207.21 грн |
IRFB7537PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 311 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 170.30 грн |
50+ | 80.91 грн |
100+ | 72.82 грн |
IRFB7540PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
на замовлення 203 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.33 грн |
50+ | 48.37 грн |
100+ | 47.23 грн |
IRFB7546PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 103.46 грн |
50+ | 54.52 грн |
100+ | 50.00 грн |
500+ | 38.20 грн |
1000+ | 34.91 грн |
2000+ | 32.14 грн |
IRFP7530PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 303.20 грн |
25+ | 169.42 грн |
100+ | 144.38 грн |
IRFP7537PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 211 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 248.29 грн |
25+ | 160.96 грн |
100+ | 140.10 грн |
IRFS7530-7PPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
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IRFS7530PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
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од. на суму грн.
IRFS7534-7PPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товару немає в наявності
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од. на суму грн.
IRFS7534PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
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од. на суму грн.
IRFS7530TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 117.70 грн |
IRFS7530TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 106.87 грн |
1600+ | 102.52 грн |
IRFS7537TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 70.87 грн |
IRFS7540TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 75.88 грн |
XMC1302T016X0032AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
XMC1302T016X0032AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BSP318SH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
6ED003L02F2XUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 107.99 грн |
6EDL04N02PRXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 119.32 грн |
BSC022N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 44.46 грн |
6ED003L02F2XUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10242 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 222.83 грн |
10+ | 161.08 грн |
25+ | 147.57 грн |
100+ | 124.55 грн |
250+ | 117.89 грн |
500+ | 113.88 грн |
1000+ | 108.77 грн |
6EDL04N02PRXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 245.11 грн |
10+ | 177.10 грн |
25+ | 162.37 грн |
100+ | 137.18 грн |
250+ | 129.92 грн |
500+ | 125.55 грн |
1000+ | 119.96 грн |
BSC022N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 119.37 грн |
10+ | 83.45 грн |
100+ | 63.94 грн |
500+ | 48.09 грн |
1000+ | 42.97 грн |
2000+ | 40.79 грн |
BGA715N7E6327XTSA2 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7500+ | 55.45 грн |
BGA715N7E6327XTSA2 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
на замовлення 15529 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.50 грн |
10+ | 79.32 грн |
25+ | 74.89 грн |
100+ | 64.45 грн |
250+ | 60.95 грн |
500+ | 58.48 грн |
1000+ | 55.23 грн |
AUIRF8736M2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFP4568 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 946.22 грн |
25+ | 599.30 грн |
AUIRFS8407-7P |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 672.46 грн |
IRAC27951SR |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Contents: Board(s)
Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Contents: Board(s)
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IRAM256-1567A2 |
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Виробник: Infineon Technologies
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
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IRAM630-1562F2 |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 15A
Description: IC MOD PWR HYBRID 600V 15A
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IRAMS10UP60B-S |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
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IRAMS10UP60B-W |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
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IRAMT20TP60A |
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Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
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IRFB7740PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
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IRFH8201TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
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IRFH8202TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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