Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126518) > Сторінка 2080 з 2109
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S80KS2563GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||||||
| S80KS5122GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||||||
|
IPD60R600P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET On-state resistance: 0.6Ω Mounting: SMD Pulsed drain current: 16A Power dissipation: 30W Gate charge: 9nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 4A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Case: PG-TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BCW66KFE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
| BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Case: SC59 Current gain: 160 Mounting: SMD Frequency: 170MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
BTS3125EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.25Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KP229E3111XTMA1 | INFINEON TECHNOLOGIES |
Category: Pressure SensorsDescription: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT Mounting: SMT Type of sensor: pressure Operating temperature: -40...140°C Supply voltage: 4.5...5.5V DC Pressure measuring range: 20...300kPa Operation mode: absolute Output configuration: analogue voltage |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 144W Case: TO247-3 Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 60A |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 30W Drain current: 64A Case: PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
PVI5080NPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF Manufacturer series: PVI-NPbF Case: DIP8 Mounting: THT Type of optocoupler: optocoupler Kind of output: photodiode Turn-off time: 220µs Turn-on time: 0.3ms Number of channels: 1 Insulation voltage: 4kV |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
FM28V020-SG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Access time: 70ns Case: SO28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
FM28V020-T28G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Access time: 70ns Case: TSOP28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2DIB0400FXUMA1 | INFINEON TECHNOLOGIES |
Category: UnclassifiedDescription: 2DIB0400FXUMA1 |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||
| CY62157EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
|
IDH08G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 60A Leakage current: 1.6µA Power dissipation: 76W Kind of package: tube Heatsink thickness: 1.17...137mm |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| S29GL01GS11DHIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |||||||||||||||
| IPA90R500C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 34W Case: TO220FP On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 68nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IPA90R800C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CY7C64225-28PVXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: interface; USB; SSOP28; 27mA; ESD; RS232 Type of integrated circuit: interface Interface: USB Case: SSOP28 Integrated circuit features: bridge Mounting: SMD Operating temperature: 0...70°C Number of channels: 1 DC supply current: 27mA Version: ESD Communictions protocol: RS232 |
на замовлення 2565 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||
|
IRG7PH44K10D-EPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRFP7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC On-state resistance: 3.3mΩ Trade name: StrongIRFET Mounting: THT Power dissipation: 230W Gate charge: 142nC Polarisation: unipolar Technology: HEXFET® Drain current: 172A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247AC |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
BSS127IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 On-state resistance: 310Ω Mounting: SMD Gate charge: 0.65nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
S25FL128SAGMFIG01 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
CY7C65217-24LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x7; I2C; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: in-tray; tube Case: QFN24 Mounting: SMD Operating temperature: -40...85°C Number of ports: 1 |
товару немає в наявності |
Мінімальне замовлення: 4900 шт В кошику од. на суму грн. | ||||||||||||||
|
CY7C65217-24LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x7; I2C; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN24 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
BCX70KE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 48000 шт В кошику од. на суму грн. | ||||||||||||||
| BCX70JE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SC59 Mounting: SMD Frequency: 250MHz Current gain: 250 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 900A Case: AG-62MMES Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Power dissipation: 4.3kW Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IPA50R280CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.28Ω Drain current: 7.5A Power dissipation: 30.4W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
на замовлення 1769 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
IPA50R950CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.95Ω Drain current: 2.4A Power dissipation: 25.7W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.19Ω Drain current: 18.5A Power dissipation: 32W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPA50R500CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.5Ω Drain current: 3.4A Power dissipation: 28W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPA50R520CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.52Ω Drain current: 7.1A Power dissipation: 66W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPA50R800CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.6A Power dissipation: 26.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BCR119SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT363 Type of transistor: NPN x2 Collector current: 0.1A Power dissipation: 0.25W Current gain: 120 Base resistor: 4.7kΩ Frequency: 150MHz Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| BTS72002EPCXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 0.12Ω Supply voltage: 4.1...28V DC Technology: PROFET™+2 Kind of package: reel; tape Operating temperature: -40...150°C Turn-off time: 0.15ms Turn-on time: 170µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IRFB38N20DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| S29GL064S80TFV030 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 192 шт В кошику од. на суму грн. | |||||||||||||||
| S29GL064S80TFV040 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 192 шт В кошику од. на суму грн. | |||||||||||||||
| S29GL064S90DHVV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 90ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |||||||||||||||
| S29GL064S90DHVV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 90ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | |||||||||||||||
| BTH500301LUAAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 22.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-HSOF-8 On-state resistance: 7mΩ Kind of package: reel; tape Supply voltage: 12...54V DC Technology: PROFET™ Operating temperature: -40...150°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| BC858BWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 39000 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||
|
TLS202B1MBV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 5V Output current: 0.15A Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Number of channels: 1 Input voltage: 2.7...18V Tolerance: ±3% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLS203B0EJVXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.75V Output voltage: 1.22...20V Output current: 0.3A Case: PG-DSO-8-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Input voltage: 2.3...20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BTS5120-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14 Output current: 2A Type of integrated circuit: power switch Kind of output: N-Channel Technology: PROFET™+ 12V Case: SO14 Kind of integrated circuit: high-side Number of channels: 2 On-state resistance: 0.22Ω Mounting: SMD Supply voltage: 8...18V DC |
на замовлення 1752 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Mounting: SMD Output current: 36A Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 300W Operating temperature: -40...175°C Integrated circuit features: internal temperature sensor Technology: TEMPFET® Output voltage: 49V Kind of package: reel; tape Case: PG-TO263-7-1 Kind of integrated circuit: low-side Number of channels: 1 On-state resistance: 6.5mΩ |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
IPP040N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 115A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 115A Power dissipation: 150W Case: TO220-3 On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Gate charge: 54nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| CY8C24223A-24PVXIT | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
|
IHW30N135R3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 175W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 263nC Kind of package: tube Turn-off time: 510ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ISA250250N04LMDSXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
|
TLE42994EXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.15A Case: PG-SSOP-14-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Number of channels: 1 Input voltage: 4.4...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TLE4299GMV33XUMA2 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.15A Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.4...45V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
CY8C24123A-24SXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH Interface: GPIO; I2C; SPI; UART Clock frequency: 24MHz Integrated circuit features: watchdog Kind of core: 8-bit Memory: 256B SRAM; 4kB FLASH Case: SO8 Mounting: SMD Supply voltage: 3...5.25V DC Number of inputs/outputs: 6 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2425 шт В кошику од. на суму грн. | ||||||||||||||
| CY8C24123A-24SXIT | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
BSC052N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 95A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| S80KS2563GABHA020 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| S80KS5122GABHA020 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| IPD60R600P7ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
В кошику
од. на суму грн.
| BCW66KFE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| BCW66KGE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFSL3207ZPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 306.17 грн |
| 10+ | 207.99 грн |
| 25+ | 172.76 грн |
| 50+ | 150.96 грн |
| IPD25N06S4L30ATMA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BTS3125EJ |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товару немає в наявності
В кошику
од. на суму грн.
| KP229E3111XTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
товару немає в наявності
В кошику
од. на суму грн.
| IHW20N120R5XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.21 грн |
| 10+ | 178.63 грн |
| BSC0504NSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PVI5080NPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 401.00 грн |
| 5+ | 341.33 грн |
| 25+ | 299.40 грн |
| FM28V020-SG |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM28V020-T28G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| 2DIB0400FXUMA1 |
![]() |
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 43.80 грн |
| CY62157EV30LL-45ZSXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IDH08G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
на замовлення 437 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.95 грн |
| 50+ | 211.34 грн |
| S29GL01GS11DHIV10 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| IPA90R500C3XKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
товару немає в наявності
В кошику
од. на суму грн.
| IPA90R800C3XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| CY7C64225-28PVXC |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
на замовлення 2565 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 47+ | 250.18 грн |
| 141+ | 208.82 грн |
| IRG7PH44K10D-EPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| IRFP7537PBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Mounting: THT
Power dissipation: 230W
Gate charge: 142nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 172A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Mounting: THT
Power dissipation: 230W
Gate charge: 142nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 172A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 177.02 грн |
| 4+ | 138.38 грн |
| 10+ | 115.73 грн |
| 25+ | 107.35 грн |
| BSS127IXTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| S25FL128SAGMFIG01 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 326.04 грн |
| CY7C65217-24LTXI |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
товару немає в наявності
Мінімальне замовлення: 4900 шт
В кошику
од. на суму грн.
| CY7C65217-24LTXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSC072N08NS5ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BCX70KE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
Мінімальне замовлення: 48000 шт
В кошику
од. на суму грн.
| BCX70JE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Current gain: 250
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Current gain: 250
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FZ900R12KE4HOSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IPA50R280CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Power dissipation: 30.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Power dissipation: 30.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
на замовлення 1769 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.86 грн |
| 10+ | 59.04 грн |
| 50+ | 45.79 грн |
| 100+ | 43.02 грн |
| IPA50R950CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.19 грн |
| 11+ | 40.26 грн |
| 25+ | 36.90 грн |
| 50+ | 34.55 грн |
| 100+ | 32.71 грн |
| IPA50R190CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
| IPA50R500CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
| IPA50R520CPXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
| IPA50R800CEXKSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCR119SH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 120
Base resistor: 4.7kΩ
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 120
Base resistor: 4.7kΩ
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTS72002EPCXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-off time: 0.15ms
Turn-on time: 170µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-off time: 0.15ms
Turn-on time: 170µs
товару немає в наявності
В кошику
од. на суму грн.
| IRFB38N20DPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| S29GL064S80TFV030 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 192 шт
В кошику
од. на суму грн.
| S29GL064S80TFV040 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 192 шт
В кошику
од. на суму грн.
| S29GL064S90DHVV10 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| S29GL064S90DHVV20 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| BTH500301LUAAUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC858BWH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 39000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 3.28 грн |
| TLS202B1MBV50HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 2.7...18V
Tolerance: ±3%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 2.7...18V
Tolerance: ±3%
товару немає в наявності
В кошику
од. на суму грн.
| TLS203B0EJVXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.75V
Output voltage: 1.22...20V
Output current: 0.3A
Case: PG-DSO-8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.3...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.75V
Output voltage: 1.22...20V
Output current: 0.3A
Case: PG-DSO-8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.3...20V
товару немає в наявності
В кошику
од. на суму грн.
| BTS5120-2EKA |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+ 12V
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.22Ω
Mounting: SMD
Supply voltage: 8...18V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+ 12V
Case: SO14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 0.22Ω
Mounting: SMD
Supply voltage: 8...18V DC
на замовлення 1752 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 202.31 грн |
| 10+ | 122.44 грн |
| 25+ | 111.54 грн |
| 100+ | 94.77 грн |
| 250+ | 83.03 грн |
| 500+ | 75.48 грн |
| 1000+ | 72.12 грн |
| BTS282ZE3180AATMA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Mounting: SMD
Output current: 36A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 300W
Operating temperature: -40...175°C
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Output voltage: 49V
Kind of package: reel; tape
Case: PG-TO263-7-1
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 6.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Mounting: SMD
Output current: 36A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 300W
Operating temperature: -40...175°C
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Output voltage: 49V
Kind of package: reel; tape
Case: PG-TO263-7-1
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 6.5mΩ
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 532.86 грн |
| IPP040N08NF2SAKMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 115A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 115A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 115A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 115A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 54nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY8C24223A-24PVXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IHW30N135R3FKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товару немає в наявності
В кошику
од. на суму грн.
| ISA250250N04LMDSXTMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TLE42994EXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 4.4...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 4.4...45V
товару немає в наявності
В кошику
од. на суму грн.
| TLE4299GMV33XUMA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.4...45V DC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; PG-DSO-14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.4...45V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C24123A-24SXI |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Memory: 256B SRAM; 4kB FLASH
Case: SO8
Mounting: SMD
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Memory: 256B SRAM; 4kB FLASH
Case: SO8
Mounting: SMD
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2425 шт
В кошику
од. на суму грн.
| CY8C24123A-24SXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD35N10S3L26ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSC052N08NS5ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.

























