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TLE49645MXTSA1 TLE49645MXTSA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
9+36.42 грн
10+30.89 грн
11+29.25 грн
25+25.60 грн
50+24.34 грн
100+23.19 грн
500+20.53 грн
1000+19.69 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TLE49646MXTMA1 TLE49646MXTMA1 Infineon Technologies Infineon-TLE4964_6M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e2117c81fe3 Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 19090 шт:
термін постачання 21-31 дні (днів)
9+37.20 грн
10+31.34 грн
11+29.70 грн
25+25.99 грн
50+24.71 грн
100+23.54 грн
500+20.84 грн
1000+19.98 грн
5000+18.26 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
KITLEDXMC1202AS01TOBO1 KITLEDXMC1202AS01TOBO1 Infineon Technologies Infineon-RGB_LED+Lighting+Shield_PB-PB-v01_00-EN.pdf?fileId=5546d4624933b87501497af6dacd211a&ack=t Description: EVAL BOARD FOR XMC1202
Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Supplied Contents: Board(s)
Utilized IC / Part: XMC1202
Voltage - Input: 12V ~ 48V
Packaging: Box
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IPA80R1K0CEXKSA1 IPA80R1K0CEXKSA1 Infineon Technologies Infineon-IPA80R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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IPA80R310CEXKSA1 IPA80R310CEXKSA1 Infineon Technologies Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Description: MOSFET N-CH 800V 6.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 Infineon Technologies Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 Description: MOSFET N-CH 650V 3.1A TO251
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPD60R2K1CEBTMA1 IPD60R2K1CEBTMA1 Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R2K1CEBTMA1 IPD60R2K1CEBTMA1 Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IPA50R380CEXKSA2 IPA50R380CEXKSA2 Infineon Technologies DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063 Description: MOSFET N-CH 500V 6.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA50R500CEXKSA2 IPA50R500CEXKSA2 Infineon Technologies Infineon-IPA50R500CE-DS-v02_00-EN.pdf?fileId=5546d46249cd10140149e640abc53919 Description: MOSFET N-CH 500V 5.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
4+94.54 грн
50+42.28 грн
100+38.62 грн
500+28.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies IPA50R650CE.pdf Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA50R800CEXKSA2 IPA50R800CEXKSA2 Infineon Technologies Infineon-IPA50R800CE-DS-v02_01-en.pdf?fileId=db3a304339d29c450139d82a1c8656be Description: MOSFET N-CH 500V 4.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
4+78.27 грн
50+33.97 грн
100+31.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA50R950CEXKSA2 IPA50R950CEXKSA2 Infineon Technologies Infineon-IPA50R950CE-DS-v02_01-en.pdf?fileId=db3a3043382e8373013851892deb1048 Description: MOSFET N-CH 500V 3.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 25.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA60R400CEXKSA1 IPA60R400CEXKSA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: MOSFET N-CH 600V 10.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA60R460CEXKSA1 IPA60R460CEXKSA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: MOSFET N-CH 600V 9.1A TO220-FP
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IPA60R650CEXKSA1 IPA60R650CEXKSA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: MOSFET N-CH 600V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
4+97.64 грн
50+51.82 грн
100+47.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA60R800CEXKSA1 IPA60R800CEXKSA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 2.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R460CEXKSA1 IPA80R460CEXKSA1 Infineon Technologies Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55 Description: MOSFET N-CH 800V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R650CEXKSA1 IPA80R650CEXKSA1 Infineon Technologies Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57 Description: MOSFET N-CH 800V 4.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPU60R1K0CEBKMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V TO-251-3
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
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IPU60R1K5CEBKMA1 IPU60R1K5CEBKMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 3.1A TO251
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPD60R1K5CEATMA1 IPD60R1K5CEATMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V TO-252-3
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IPD60R400CEATMA1 IPD60R400CEATMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: MOSFET N-CH 600V 10.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R460CEATMA1 IPD60R460CEATMA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: MOSFET N-CH 600V 9.1A TO252-3
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IPD60R650CEATMA1 IPD60R650CEATMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: MOSFET N-CH 600V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 63W (Tc)
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IPD60R800CEATMA1 IPD60R800CEATMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R1K5CEATMA1 IPD60R1K5CEATMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V TO-252-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
7+46.49 грн
10+38.13 грн
Мінімальне замовлення: 7 шт
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IPD60R800CEATMA1 IPD60R800CEATMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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AUIRS2012STR AUIRS2012STR Infineon Technologies AUIRS2012S.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CHL8316CRT CHL8316CRT Infineon Technologies CHL8316.pdf Description: IC REG CTRLR DDR 2OUT 48QFN
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IR7106STRPBF IR7106STRPBF Infineon Technologies ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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IR7304STRPBF IR7304STRPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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IRFHM7194TRPBF IRFHM7194TRPBF Infineon Technologies IRFHM7194TRPbF.pdf Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
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IRMCF588QTR IRMCF588QTR Infineon Technologies IRMCF588.pdf Description: IC MOTOR DRIVER 100LQFP
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AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
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 Мінімальне замовлення: 4000 шт
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IRF3707ZSTRLPBF IRF3707ZSTRLPBF Infineon Technologies IRF3707Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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IRFH7184TRPBF IRFH7184TRPBF Infineon Technologies IRFH7184PbF.pdf Description: MOSFET N-CH 100V 20A/128A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
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IRFH7190TRPBF IRFH7190TRPBF Infineon Technologies IRFH7190PbF.pdf Description: MOSFET N-CH 100V 15A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFSL7437TRLPBF IRFSL7437TRLPBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N-CH 40V 195A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRGS4640DTRLPBF IRGS4640DTRLPBF Infineon Technologies IRGx4640D(-E)PbF.pdf Description: DIODE 600V 40A D2PAK
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRGS4640DTRRPBF IRGS4640DTRRPBF Infineon Technologies IRGx4640D(-E)PbF.pdf Description: DIODE 600V 24A D2PAK
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRDM982-035MBTR IRDM982-035MBTR Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IRDM982-025MB IRDM982-025MB Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRDM982-035MB IRDM982-035MB Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRMCF588QTY IRMCF588QTY Infineon Technologies IRMCF588.pdf Description: IC MOTOR DRIVER 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: I²C, RS-232
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (6)
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-LQFP (14x14)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
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AUIRGF76524D0 AUIRGF76524D0 Infineon Technologies Description: DIODE IGBT 680V 24A TO-247AD
товару немає в наявності
 Мінімальне замовлення: 400 шт
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AUIRGP76524D0 AUIRGP76524D0 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE IGBT 680V 24A TO-247AC
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AUIRGU4045D AUIRGU4045D Infineon Technologies auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f Description: IGBT TRENCH 600V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: IPAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IR7106SPBF IR7106SPBF Infineon Technologies ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товару немає в наявності
 Мінімальне замовлення: 3800 шт
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IRFB3407ZPBF IRFB3407ZPBF Infineon Technologies irfb3407zpbf.pdf?fileId=5546d462533600a40153561577b81dff Description: MOSFET N-CH 75V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG8B08N120KDPBF IRG8B08N120KDPBF Infineon Technologies irg8p08n120kdpbf.pdf?fileId=5546d462533600a4015356519c2c2402 Description: DIODE 1200V 8A TO-220
товару немає в наявності
 Мінімальне замовлення: 200 шт
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IRGB4640DPBF IRGB4640DPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: DIODE 600V 40A TO-220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-220AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRDAKO726350B Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Current: 10 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Part Status: Obsolete
Packaging: Tube
Voltage: 600 V
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ISO2H823V25XUMA1 ISO2H823V25XUMA1 Infineon Technologies Infineon-ISO2H823V2.5-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014bb73da14314b0 Description: IC PWR SWITCH P-CHAN 1:8 70VQFN
Packaging: Tape & Reel (TR)
Package / Case: 70-VFQFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 210mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 3.6V
Ratio - Input:Output: 1:8
Supplier Device Package: PG-VQFN-70-2
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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CY7C1460KV25-250AXC CY7C1460KV25-250AXC Infineon Technologies Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 2.5 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
1+3844.32 грн
10+3417.48 грн
25+3376.65 грн
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CY7C1463KV33-133AXC CY7C1463KV33-133AXC Infineon Technologies Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 36MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Access Time: 6.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 144 шт
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CY7C1460KV25-167BZXI CY7C1460KV25-167BZXI Infineon Technologies Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me Description: IC SRAM 36MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 3.4 ns
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+5310.44 грн
10+4603.65 грн
25+4502.76 грн
40+4136.61 грн
105+3621.62 грн
В кошику  од. на суму  грн.
CY7C1440KV33-250BZXI CY7C1440KV33-250BZXI Infineon Technologies Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
1+4640.15 грн
10+4124.36 грн
25+3989.61 грн
50+3649.92 грн
В кошику  од. на суму  грн.
IPD50R280CEATMA1 IPD50R280CEATMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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TLE49645MXTSA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+36.42 грн
10+30.89 грн
11+29.25 грн
25+25.60 грн
50+24.34 грн
100+23.19 грн
500+20.53 грн
1000+19.69 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TLE49646MXTMA1 Infineon-TLE4964_6M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e2117c81fe3
TLE49646MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 19090 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+37.20 грн
10+31.34 грн
11+29.70 грн
25+25.99 грн
50+24.71 грн
100+23.54 грн
500+20.84 грн
1000+19.98 грн
5000+18.26 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
KITLEDXMC1202AS01TOBO1 Infineon-RGB_LED+Lighting+Shield_PB-PB-v01_00-EN.pdf?fileId=5546d4624933b87501497af6dacd211a&ack=t
KITLEDXMC1202AS01TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR XMC1202
Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Supplied Contents: Board(s)
Utilized IC / Part: XMC1202
Voltage - Input: 12V ~ 48V
Packaging: Box
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IPA80R1K0CEXKSA1 Infineon-IPA80R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b
IPA80R1K0CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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IPA80R310CEXKSA1 Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45
IPA80R310CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPS65R1K5CEAKMA1 Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92
IPS65R1K5CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.1A TO251
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPD60R2K1CEBTMA1 Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
IPD60R2K1CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R2K1CEBTMA1 Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
IPD60R2K1CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IPA50R380CEXKSA2 DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063
IPA50R380CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA50R500CEXKSA2 Infineon-IPA50R500CE-DS-v02_00-EN.pdf?fileId=5546d46249cd10140149e640abc53919
IPA50R500CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 5.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+94.54 грн
50+42.28 грн
100+38.62 грн
500+28.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA50R650CEXKSA2 IPA50R650CE.pdf
IPA50R650CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA50R800CEXKSA2 Infineon-IPA50R800CE-DS-v02_01-en.pdf?fileId=db3a304339d29c450139d82a1c8656be
IPA50R800CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+78.27 грн
50+33.97 грн
100+31.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA50R950CEXKSA2 Infineon-IPA50R950CE-DS-v02_01-en.pdf?fileId=db3a3043382e8373013851892deb1048
IPA50R950CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 25.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
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IPA60R400CEXKSA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPA60R400CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
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IPA60R460CEXKSA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPA60R460CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO220-FP
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IPA60R650CEXKSA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPA60R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.64 грн
50+51.82 грн
100+47.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPA60R800CEXKSA1 IPD%2CIPA60R800CE.pdf
IPA60R800CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R1K4CEXKSA1 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R460CEXKSA1 Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55
IPA80R460CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA80R650CEXKSA1 Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57
IPA80R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPU60R1K0CEBKMA1 Infineon-IPD60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
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IPU60R1K5CEBKMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPU60R1K5CEBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPD60R1K5CEATMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
товару немає в наявності
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IPD60R400CEATMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPD60R400CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R460CEATMA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPD60R460CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO252-3
товару немає в наявності
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IPD60R650CEATMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 63W (Tc)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IPD60R800CEATMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD60R1K5CEATMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+46.49 грн
10+38.13 грн
Мінімальне замовлення: 7 шт
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IPD60R800CEATMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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AUIRS2012STR AUIRS2012S.pdf
AUIRS2012STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CHL8316CRT CHL8316.pdf
CHL8316CRT
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48QFN
товару немає в наявності
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IR7106STRPBF ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a
IR7106STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товару немає в наявності
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IR7304STRPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товару немає в наявності
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IRFHM7194TRPBF IRFHM7194TRPbF.pdf
IRFHM7194TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
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IRMCF588QTR IRMCF588.pdf
IRMCF588QTR
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100LQFP
товару немає в наявності
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AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4000 шт
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IRF3707ZSTRLPBF IRF3707Z%28S%2CL%29PbF.pdf
IRF3707ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
товару немає в наявності
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IRFH7184TRPBF IRFH7184PbF.pdf
IRFH7184TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 20A/128A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
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IRFH7190TRPBF IRFH7190PbF.pdf
IRFH7190TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFSL7437TRLPBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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IRGS4640DTRLPBF IRGx4640D(-E)PbF.pdf
IRGS4640DTRLPBF
Виробник: Infineon Technologies
Description: DIODE 600V 40A D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRGS4640DTRRPBF IRGx4640D(-E)PbF.pdf
IRGS4640DTRRPBF
Виробник: Infineon Technologies
Description: DIODE 600V 24A D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRDM982-035MBTR IRDM982.pdf
IRDM982-035MBTR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IRDM982-025MB IRDM982.pdf
IRDM982-025MB
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRDM982-035MB IRDM982.pdf
IRDM982-035MB
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 800 шт
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IRMCF588QTY IRMCF588.pdf
IRMCF588QTY
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: I²C, RS-232
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (6)
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-LQFP (14x14)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
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AUIRGF76524D0
AUIRGF76524D0
Виробник: Infineon Technologies
Description: DIODE IGBT 680V 24A TO-247AD
товару немає в наявності
Мінімальне замовлення: 400 шт
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AUIRGP76524D0 Part_Number_Guide_Web.pdf
AUIRGP76524D0
Виробник: Infineon Technologies
Description: DIODE IGBT 680V 24A TO-247AC
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AUIRGU4045D auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f
AUIRGU4045D
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: IPAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IR7106SPBF ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a
IR7106SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику  од. на суму  грн.
IRFB3407ZPBF irfb3407zpbf.pdf?fileId=5546d462533600a40153561577b81dff
IRFB3407ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG8B08N120KDPBF irg8p08n120kdpbf.pdf?fileId=5546d462533600a4015356519c2c2402
IRG8B08N120KDPBF
Виробник: Infineon Technologies
Description: DIODE 1200V 8A TO-220
товару немає в наявності
Мінімальне замовлення: 200 шт
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IRGB4640DPBF IRGx4640D%28-E%29PbF.pdf
IRGB4640DPBF
Виробник: Infineon Technologies
Description: DIODE 600V 40A TO-220
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-220AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRDAKO726350B fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Current: 10 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Part Status: Obsolete
Packaging: Tube
Voltage: 600 V
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ISO2H823V25XUMA1 Infineon-ISO2H823V2.5-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014bb73da14314b0
ISO2H823V25XUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:8 70VQFN
Packaging: Tape & Reel (TR)
Package / Case: 70-VFQFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 210mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 3.6V
Ratio - Input:Output: 1:8
Supplier Device Package: PG-VQFN-70-2
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
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CY7C1460KV25-250AXC Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me
CY7C1460KV25-250AXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 2.5 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3844.32 грн
10+3417.48 грн
25+3376.65 грн
В кошику  од. на суму  грн.
CY7C1463KV33-133AXC Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1463KV33-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Access Time: 6.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 144 шт
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CY7C1460KV25-167BZXI Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me
CY7C1460KV25-167BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 3.4 ns
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+5310.44 грн
10+4603.65 грн
25+4502.76 грн
40+4136.61 грн
105+3621.62 грн
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CY7C1440KV33-250BZXI Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY7C1440KV33-250BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4640.15 грн
10+4124.36 грн
25+3989.61 грн
50+3649.92 грн
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IPD50R280CEATMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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