Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149555) > Сторінка 223 з 2493
Фото | Назва | Виробник | Інформація |
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IRG7T75HF12A | Infineon Technologies |
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IRG7U50HF12A | Infineon Technologies |
![]() Packaging: Box Package / Case: POWIR® 34 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A NTC Thermistor: No Supplier Device Package: POWIR® 34 Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 310 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
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CG8352AFT | Infineon Technologies |
Description: IC USB PERIPHERAL HS 56QFN Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CG8354AFT | Infineon Technologies |
Description: IC USB PERIPHERAL HS 56QFN Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||
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CY8C4014SXI-411T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 16-SOIC Number of I/O: 13 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C13451G-100BZXE | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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CY7C1411KV18-250BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 8 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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CY7C2265KV18-550BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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CY7C2663KV18-550BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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XMC4100Q48K128ABXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 128KB (128K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I²S, LED, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-22 Part Status: Discontinued at Digi-Key Number of I/O: 21 DigiKey Programmable: Not Verified |
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BTF3050TEATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 40V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
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TLF42772ELXUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTF3050TEATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 40V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 702 шт: термін постачання 21-31 дні (днів) |
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AUIRF7640S2TR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4947 шт: термін постачання 21-31 дні (днів) |
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AUIR33402S | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK (7-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF100B202 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V |
на замовлення 1919 шт: термін постачання 21-31 дні (днів) |
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IRF7171MTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH7191TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFI7446GPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V Power Dissipation (Max): 40.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRGP4760D-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 144 A Power - Max: 325 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRGS4715DTRLPBF | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRGS4715DTRRPBF | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRPLHID2A | Infineon Technologies |
![]() Packaging: Box Function: Ballast Control Type: Opto/Lighting Utilized IC / Part: IRS2573D Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Short-Circuit Protection |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRSM505-015DA | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 5Ohm Applications: AC Motors Current - Output / Channel: 1.2A Current - Peak Output: 9A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-DIP Fault Protection: UVLO Load Type: Inductive Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRSM505-015DA2 | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 5Ohm Applications: AC Motors Current - Output / Channel: 1.2A Current - Peak Output: 9A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRSM505-015PA | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 5Ohm Applications: AC Motors Current - Output / Channel: 1.2A Current - Peak Output: 9A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-SOP Fault Protection: UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRSM505-084DA | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 340mOhm Applications: AC Motors Current - Output / Channel: 4.6A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-DIP Fault Protection: UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRSM505-084DA2 | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 340mOhm Applications: AC Motors Current - Output / Channel: 4.6A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRSM505-084PA | Infineon Technologies |
![]() Packaging: Tube Features: Bootstrap Circuit Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 340mOhm Applications: AC Motors Current - Output / Channel: 4.6A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-SOP Fault Protection: UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRSM515-015PA | Infineon Technologies |
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на замовлення 238 шт: термін постачання 21-31 дні (днів) |
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IRSM515-035DA2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRSM515-044DA2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY14B116L-ZS25XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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CY14B116N-Z30XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-TSOP I Part Status: Active Write Cycle Time - Word, Page: 30ns Memory Interface: Parallel Access Time: 30 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY14B116N-ZSP25XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 164 шт: термін постачання 21-31 дні (днів) |
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CY14B116N-ZSP45XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY14B116S-BZ25XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 165-FBGA (15x17) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 512K x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY14V116N-BZ30XI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 165-FBGA (15x17) Write Cycle Time - Word, Page: 30ns Memory Interface: Parallel Access Time: 30 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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CY8C4014PVI-412 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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CY8C4125AXI-473 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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CY8C4245AXI-473 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 1148 шт: термін постачання 21-31 дні (днів) |
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CY8C5888AXI-LP096 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 2x12b; D/A 4x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 1482 шт: термін постачання 21-31 дні (днів) |
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CYUSB2014-BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 121-TFBGA Mounting Type: Surface Mount Interface: I2C, I2S, MMC/SD, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: SuperSpeed USB Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-FBGA (10x10) Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 228 шт: термін постачання 21-31 дні (днів) |
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CYUSB3064-BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 422 шт: термін постачання 21-31 дні (днів) |
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CYUSB3064-BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Number of I/O: 12 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYUSB3065-BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 1089 шт: термін постачання 21-31 дні (днів) |
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IGW30N65L5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 33ns/308ns Switching Energy: 470µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
на замовлення 669 шт: термін постачання 21-31 дні (днів) |
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IKW30N65NL5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 59ns/283ns Switching Energy: 560µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 23Ohm, 15V Gate Charge: 168 nC Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKZ75N65NH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 52ns/412ns Switching Energy: 880µJ (on), 520µJ (off) Test Condition: 400V, 37.5A, 27Ohm, 15V Gate Charge: 166 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKZ50N65NH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 22ns/252ns Switching Energy: 350µJ (on), 200µJ (off) Test Condition: 400V, 25A, 15Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGZ100N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGZ75N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 119 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGZ50N65H5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/250ns Switching Energy: 410µJ (on), 190µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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HFA08TB60PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HFA15PB60PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HFA15TB60PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7480MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 217A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DirectFET™ Isometric ME Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V |
на замовлення 6621 шт: термін постачання 21-31 дні (днів) |
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IRFH7191TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH7787TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 41A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFS4321TRL7PP | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK-7 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
IRG7T75HF12A |
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Виробник: Infineon Technologies
Description: MOD IGBT 1200V 75A POWIR 34
Description: MOD IGBT 1200V 75A POWIR 34
товару немає в наявності
В кошику
од. на суму грн.
IRG7U50HF12A |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
CG8352AFT |
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CG8354AFT |
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY8C4014SXI-411T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY7C13451G-100BZXE |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY7C1411KV18-250BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY7C2265KV18-550BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
CY7C2663KV18-550BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
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XMC4100Q48K128ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
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BTF3050TEATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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TLF42772ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA 14SSOP
Description: IC REG LIN POS ADJ 300MA 14SSOP
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BTF3050TEATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.95 грн |
10+ | 71.25 грн |
25+ | 64.64 грн |
100+ | 53.84 грн |
250+ | 50.58 грн |
500+ | 48.61 грн |
AUIRF7640S2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4947 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 166.90 грн |
10+ | 103.08 грн |
100+ | 70.07 грн |
500+ | 52.52 грн |
1000+ | 48.26 грн |
2000+ | 44.69 грн |
AUIR33402S |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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IRF100B202 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V
Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 175.94 грн |
10+ | 76.64 грн |
100+ | 60.13 грн |
500+ | 51.29 грн |
1000+ | 49.99 грн |
IRF7171MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
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IRFH7191TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFI7446GPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
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IRGP4760D-EPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGS4715DTRLPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V D2-PAK
Description: IGBT 650V D2-PAK
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IRGS4715DTRRPBF |
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Виробник: Infineon Technologies
Description: IGBT 650V D2-PAK
Description: IGBT 650V D2-PAK
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IRPLHID2A |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
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IRSM505-015DA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
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IRSM505-015DA2 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-015PA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA2 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084PA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM515-015PA |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23SOP
Description: IC MOTOR DRIVER 600V 23SOP
на замовлення 238 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 943.02 грн |
10+ | 820.14 грн |
25+ | 782.02 грн |
100+ | 637.24 грн |
IRSM515-035DA2 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Description: IC MOTOR DRIVER 600V 23DIP
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IRSM515-044DA2 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Description: IC MOTOR DRIVER 600V 23DIP
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CY14B116L-ZS25XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
на замовлення 265 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6902.90 грн |
10+ | 5897.57 грн |
25+ | 5622.76 грн |
40+ | 5148.97 грн |
135+ | 4831.94 грн |
CY14B116N-Z30XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116N-ZSP25XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 164 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7502.26 грн |
10+ | 6656.58 грн |
25+ | 6436.17 грн |
50+ | 5976.33 грн |
CY14B116N-ZSP45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116S-BZ25XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY14V116N-BZ30XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 73 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6003.45 грн |
10+ | 5204.18 грн |
25+ | 5090.19 грн |
40+ | 4676.24 грн |
CY8C4014PVI-412 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 210.47 грн |
10+ | 182.25 грн |
25+ | 171.93 грн |
100+ | 137.46 грн |
250+ | 129.07 грн |
500+ | 112.94 грн |
1000+ | 92.04 грн |
CY8C4125AXI-473 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 263.09 грн |
10+ | 190.49 грн |
25+ | 174.94 грн |
CY8C4245AXI-473 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 331.33 грн |
10+ | 241.55 грн |
25+ | 222.22 грн |
160+ | 183.39 грн |
320+ | 176.89 грн |
480+ | 173.63 грн |
960+ | 166.08 грн |
CY8C5888AXI-LP096 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2122.83 грн |
10+ | 1653.10 грн |
90+ | 1454.71 грн |
180+ | 1326.60 грн |
270+ | 1307.27 грн |
CYUSB2014-BZXC |
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Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 228 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1773.41 грн |
10+ | 1368.08 грн |
25+ | 1283.31 грн |
168+ | 1091.98 грн |
CYUSB3064-BZXC |
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Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 422 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1759.43 грн |
10+ | 1361.91 грн |
25+ | 1278.78 грн |
240+ | 1075.12 грн |
CYUSB3064-BZXI |
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Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
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CYUSB3065-BZXC |
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Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 1089 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1919.76 грн |
10+ | 1490.25 грн |
25+ | 1400.70 грн |
240+ | 1179.84 грн |
480+ | 1153.00 грн |
IGW30N65L5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
на замовлення 669 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 342.84 грн |
30+ | 183.15 грн |
120+ | 150.76 грн |
510+ | 119.17 грн |
IKW30N65NL5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
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IKZ75N65NH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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IKZ50N65NH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
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IGZ100N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
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IGZ75N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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IGZ50N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 460.41 грн |
30+ | 251.19 грн |
120+ | 208.79 грн |
HFA08TB60PBF |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA15PB60PBF |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA15TB60PBF |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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IRF7480MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
на замовлення 6621 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 131.55 грн |
10+ | 98.33 грн |
100+ | 81.19 грн |
500+ | 75.89 грн |
1000+ | 70.19 грн |
2000+ | 66.51 грн |
IRFH7191TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFH7787TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 68A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 41A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
Description: MOSFET N-CH 75V 68A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 41A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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IRFS4321TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 86A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Description: MOSFET N-CH 150V 86A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
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