Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122993) > Сторінка 222 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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TLE49615MXTMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 19.8mT Trip, -19.8mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49642MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 36mT Trip, 15.9mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49644MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Part Status: Active Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 13.5mT Trip, 5.4mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49646MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 5.4mT Trip, 0.9mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLI4970D050T4XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 50A 8TISONQualification: AEC-Q100 Number of Channels: 1 Grade: Automotive Supplier Device Package: PG-TISON-8-1 Current - Sensing: 50A Current - Supply (Max): 20mA For Measuring: AC/DC Linearity: ±1.6% Sensor Type: Hall Effect, Differential Response Time: 57µs Voltage - Supply: 3.1V ~ 3.5V Operating Temperature: -40°C ~ 85°C Accuracy: ±0.05% Frequency: DC ~ 18kHz Output: SPI Mounting Type: Surface Mount Polarization: Bidirectional Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE49612MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Grade: Automotive Qualification: AEC-Q100 Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 7.3mT Trip, -7.3mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TLE49614MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 13.5mT Trip, -13.5mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49641MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 23.5mT Trip, 8.4mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLE49643MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Part Status: Active Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 16.6mT Trip, 6.1mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLE49645MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 10.4mT Trip, 2.7mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49681MXTSA1 | Infineon Technologies |
Description: MAG SWITCH BIPOLAR SOT23-3Features: Temperature Compensated Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 2.25mT Trip, -2.25mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Bipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TLI49611MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: -40°C ~ 125°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TLI4970D050T4XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 50A 8TISONResponse Time: 57µs Voltage - Supply: 3.1V ~ 3.5V Operating Temperature: -40°C ~ 85°C Accuracy: ±0.05% Frequency: DC ~ 18kHz Output: SPI Mounting Type: Surface Mount Polarization: Bidirectional Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q100 Number of Channels: 1 Grade: Automotive Supplier Device Package: PG-TISON-8-1 Current - Sensing: 50A Current - Supply (Max): 20mA For Measuring: AC/DC Linearity: ±1.6% Sensor Type: Hall Effect, Differential |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE49611MXTMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2524 шт: термін постачання 21-31 дні (днів) |
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TLE49612MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 7.3mT Trip, -7.3mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 23898 шт: термін постачання 21-31 дні (днів) |
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TLE49614MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 13.5mT Trip, -13.5mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 2654 шт: термін постачання 21-31 дні (днів) |
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TLE49681MXTSA1 | Infineon Technologies |
Description: MAG SWITCH BIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 2.25mT Trip, -2.25mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Bipolar Switch Mounting Type: Surface Mount Polarization: North Pole, South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 23264 шт: термін постачання 21-31 дні (днів) |
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TLI49611MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: -40°C ~ 125°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 17669 шт: термін постачання 21-31 дні (днів) |
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TLE49641MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 23.5mT Trip, 8.4mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10898 шт: термін постачання 21-31 дні (днів) |
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TLE49643MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Part Status: Active Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 16.6mT Trip, 6.1mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 9767 шт: термін постачання 21-31 дні (днів) |
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TLE49644MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Part Status: Active Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 13.5mT Trip, 5.4mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 916 шт: термін постачання 21-31 дні (днів) |
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TLE49645MXTSA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 10.4mT Trip, 2.7mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 2260 шт: термін постачання 21-31 дні (днів) |
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TLE49646MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 5.4mT Trip, 0.9mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 19090 шт: термін постачання 21-31 дні (днів) |
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KITLEDXMC1202AS01TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR XMC1202Contents: Board(s) Outputs and Type: 3 Non-Isolated Outputs Supplied Contents: Board(s) Utilized IC / Part: XMC1202 Voltage - Input: 12V ~ 48V Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R1K0CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 3.6A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R310CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 6.8A TO220Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.9V @ 1mA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPS65R1K5CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.1A TO251 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R2K1CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.3A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R2K1CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.3A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA50R380CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 6.3A TO220Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 260µA Power Dissipation (Max): 29.2W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA50R500CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 5.4A TO220Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 524 шт: термін постачання 21-31 дні (днів) |
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IPA50R650CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.6A TO220Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Obsolete Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 150µA Power Dissipation (Max): 27.2W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA50R800CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.1A TO220Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 26.4W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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IPA50R950CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 3.7A TO220Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO220-3-FP Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 25.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA60R400CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.3A TO220-FPInput Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA60R460CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9.1A TO220-FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA60R650CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7A TO220-FPInput Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 497 шт: термін постачання 21-31 дні (днів) |
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IPA60R800CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5.6A TO220-FPInput Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 170µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R1K4CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 2.8A TO220Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.9V @ 240µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R460CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5A TO220Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.9V @ 680µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R650CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 4.5A TO220Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.9V @ 470µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IPU60R1K0CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO-251-3 |
на замовлення 485 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||||
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IPU60R1K5CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.1A TO251Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO-252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R400CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.3A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R460CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO-252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R650CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 200µA Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power Dissipation (Max): 63W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R800CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5.6A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 170µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO-252-3 |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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IPD60R460CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V TO-252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R650CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7A TO252-3Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R800CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5.6A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 170µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AUIRS2012STR | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 22ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.5V Current - Peak Output (Source, Sink): 2A, 2A Grade: Automotive Part Status: Obsolete DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
CHL8316CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 48QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IR7106STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IR7304STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRFHM7194TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 9.3A/34A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 50µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRMCF588QTR | Infineon Technologies |
Description: IC MOTOR DRIVER 100LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AUIRF8739L2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 57A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IRF3707ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 59A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| TLE49615MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 19.8mT Trip, -19.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Description: MAGNETIC SWITCH LATCH SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 19.8mT Trip, -19.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TLE49642MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TLE49644MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TLE49646MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 19.82 грн |
| TLI4970D050T4XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TLE49612MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Grade: Automotive
Qualification: AEC-Q100
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 7.3mT Trip, -7.3mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH LATCH SOT23-3
Grade: Automotive
Qualification: AEC-Q100
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 7.3mT Trip, -7.3mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.80 грн |
| 6000+ | 19.30 грн |
| 9000+ | 18.90 грн |
| 15000+ | 17.29 грн |
| 21000+ | 17.01 грн |
| TLE49614MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, -13.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH SOT23-3
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, -13.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE49641MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.77 грн |
| 6000+ | 20.20 грн |
| 9000+ | 19.78 грн |
| TLE49643MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 16.6mT Trip, 6.1mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: MAG SWITCH UNIPOLAR SOT23-3
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 16.6mT Trip, 6.1mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.43 грн |
| 6000+ | 18.96 грн |
| 9000+ | 18.57 грн |
| TLE49645MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE49681MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 2.25mT Trip, -2.25mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Bipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: MAG SWITCH BIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 2.25mT Trip, -2.25mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Bipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.74 грн |
| 6000+ | 20.27 грн |
| 9000+ | 18.96 грн |
| 15000+ | 17.36 грн |
| TLI49611MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.64 грн |
| 6000+ | 16.35 грн |
| 9000+ | 16.00 грн |
| 15000+ | 14.63 грн |
| TLI4970D050T4XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Description: SENSOR CURRENT HALL 50A 8TISON
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
товару немає в наявності
В кошику
од. на суму грн.
| TLE49611MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2524 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 10+ | 30.59 грн |
| 25+ | 26.81 грн |
| 50+ | 25.49 грн |
| 100+ | 24.28 грн |
| 500+ | 21.49 грн |
| 1000+ | 20.61 грн |
| TLE49612MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 7.3mT Trip, -7.3mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 7.3mT Trip, -7.3mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 23898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 10+ | 30.89 грн |
| 11+ | 29.25 грн |
| 25+ | 25.60 грн |
| 50+ | 24.34 грн |
| 100+ | 23.19 грн |
| 500+ | 20.53 грн |
| 1000+ | 19.69 грн |
| TLE49614MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, -13.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, -13.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 2654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 10+ | 30.15 грн |
| 11+ | 28.51 грн |
| 25+ | 24.99 грн |
| 50+ | 23.74 грн |
| 100+ | 22.61 грн |
| 500+ | 20.02 грн |
| 1000+ | 19.20 грн |
| TLE49681MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 2.25mT Trip, -2.25mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Bipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH BIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 2.25mT Trip, -2.25mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Bipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 23264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 42.46 грн |
| 25+ | 36.62 грн |
| 50+ | 33.14 грн |
| 100+ | 28.23 грн |
| 500+ | 24.54 грн |
| 1000+ | 21.12 грн |
| TLI49611MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 17669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 12+ | 25.00 грн |
| 25+ | 21.88 грн |
| 50+ | 20.76 грн |
| 100+ | 19.76 грн |
| 500+ | 17.45 грн |
| 1000+ | 16.72 грн |
| TLE49641MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 10+ | 30.59 грн |
| 25+ | 26.81 грн |
| 50+ | 25.49 грн |
| 100+ | 24.28 грн |
| 500+ | 21.49 грн |
| 1000+ | 20.61 грн |
| TLE49643MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 16.6mT Trip, 6.1mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: MAG SWITCH UNIPOLAR SOT23-3
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 16.6mT Trip, 6.1mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 9767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 10+ | 30.45 грн |
| 11+ | 28.73 грн |
| 25+ | 25.15 грн |
| 50+ | 23.92 грн |
| 100+ | 22.78 грн |
| 500+ | 20.17 грн |
| 1000+ | 19.34 грн |
| TLE49644MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 10+ | 30.67 грн |
| 25+ | 26.86 грн |
| 50+ | 25.55 грн |
| 100+ | 24.33 грн |
| 500+ | 21.54 грн |
| TLE49645MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, 2.7mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 2260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 10+ | 30.89 грн |
| 11+ | 29.25 грн |
| 25+ | 25.60 грн |
| 50+ | 24.34 грн |
| 100+ | 23.19 грн |
| 500+ | 20.53 грн |
| 1000+ | 19.69 грн |
| TLE49646MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH UNIPOLAR SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 19090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 10+ | 31.34 грн |
| 11+ | 29.70 грн |
| 25+ | 25.99 грн |
| 50+ | 24.71 грн |
| 100+ | 23.54 грн |
| 500+ | 20.84 грн |
| 1000+ | 19.98 грн |
| 5000+ | 18.26 грн |
| KITLEDXMC1202AS01TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR XMC1202
Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Supplied Contents: Board(s)
Utilized IC / Part: XMC1202
Voltage - Input: 12V ~ 48V
Packaging: Box
Description: EVAL BOARD FOR XMC1202
Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Supplied Contents: Board(s)
Utilized IC / Part: XMC1202
Voltage - Input: 12V ~ 48V
Packaging: Box
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| IPA80R1K0CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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| IPA80R310CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 6.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPS65R1K5CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.1A TO251
Description: MOSFET N-CH 650V 3.1A TO251
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Мінімальне замовлення: 1500 шт
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| IPD60R2K1CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IPD60R2K1CEBTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 2.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| IPA50R380CEXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 6.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA50R500CEXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 5.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 5.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 50+ | 42.28 грн |
| 100+ | 38.62 грн |
| 500+ | 28.07 грн |
| IPA50R650CEXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA50R800CEXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 4.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26.4W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.27 грн |
| 50+ | 33.97 грн |
| 100+ | 31.07 грн |
| IPA50R950CEXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 25.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 3.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 25.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA60R400CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 10.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA60R460CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO220-FP
Description: MOSFET N-CH 600V 9.1A TO220-FP
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| IPA60R650CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.64 грн |
| 50+ | 51.82 грн |
| 100+ | 47.87 грн |
| IPA60R800CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 5.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA80R1K4CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 2.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA80R460CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPA80R650CEXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 4.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| IPU60R1K0CEBKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
Description: MOSFET N-CH 600V TO-251-3
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
| IPU60R1K5CEBKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 3.1A TO251
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| IPD60R1K5CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
Description: MOSFET N-CH 600V TO-252-3
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| IPD60R400CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 10.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IPD60R460CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
Description: MOSFET N-CH 600V TO-252-3
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| IPD60R650CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 63W (Tc)
Description: MOSFET N-CH 600V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 63W (Tc)
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| IPD60R800CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IPD60R1K5CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
Description: MOSFET N-CH 600V TO-252-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 10+ | 38.13 грн |
| IPD60R460CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
Description: MOSFET N-CH 600V TO-252-3
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| IPD60R650CEATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Description: MOSFET N-CH 600V 7A TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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| IPD60R800CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 5.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| AUIRS2012STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| CHL8316CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48QFN
Description: IC REG CTRLR DDR 2OUT 48QFN
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| IR7106STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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| IR7304STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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| IRFHM7194TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
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| IRMCF588QTR |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100LQFP
Description: IC MOTOR DRIVER 100LQFP
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| AUIRF8739L2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 4000 шт
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| IRF3707ZSTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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