Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119458) > Сторінка 220 з 1991

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IRG5U150HF06A Infineon Technologies IRG5U150HF06A.pdf Description: IGBT MOD 600V 200A 660W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V
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IRG5U150HF12B Infineon Technologies IRG5U150HF12B.pdf Description: IGBT MOD 1200V 260A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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IRG5U400SD12B Infineon Technologies irg5u400sd12b.pdf Description: IGBT MOD 1200V 600A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 45.5 nF @ 25 V
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IRG5U50HF12A Infineon Technologies IRG5U50HF12A.pdf Description: IGBT MOD 1200V 85A 390W POWIR 34
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IRG5U50HH12E Infineon Technologies IRG5U50HH12E.pdf Description: IGBT MOD 1200V 85A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
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IRG5U75HF06A Infineon Technologies irg5u75hf06a.pdf Description: IGBT MOD 600V 100A 330W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IRG5U75HF12A Infineon Technologies IRG5U75HF12A.pdf Description: IGBT MOD 1200V 130A POWIR 34
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IRG5U75HH06E Infineon Technologies irg5u75hh06e.pdf Description: IGBT MOD 600V 100A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IRG5U75HH12E Infineon Technologies IRG5U75HH12E.pdf Description: IGBT MOD 1200V 130A POWIR ECO 2
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IRG5W50HF06A Infineon Technologies irg5w50hf06a.pdf Description: IGBT MOD 600V 75A 260W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
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IRG7T100HF12A Infineon Technologies IRG7T100HF12A.pdf Description: IGBT MOD 1200V 200A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 575 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
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IRG7T100HF12B Infineon Technologies irg7t100hf12b.pdf Description: IGBT MOD 1200V 200A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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IRG7T200CL12B Infineon Technologies IRG7T200CL12B.pdf Description: IGBT MODULE 1200V 390A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1060 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 22.5 nF @ 25 V
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IRG7T200HF12B Infineon Technologies Description: IGBT MOD 1200V 400A POWIR 62
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IRG7T300CL12B Infineon Technologies IRG7T300CL12B.pdf Description: IGBT MOD 1200V 570A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 42.4 nF @ 25 V
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IRG7T300HF12B Infineon Technologies IRG7T300HF12B.pdf Description: IGBT MOD 1200V 570A POWIR 62
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IRG7T400SD12B Infineon Technologies IRG7T400SD12B.pdf Description: IGBT MOD 1200V 780A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 780 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2140 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 58.5 nF @ 25 V
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IRG7T50FF12E Infineon Technologies irg7t50ff12e.pdf Description: IGBT MOD 1200V 100A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
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IRG7T50HF12A Infineon Technologies irg7t50hf12a.pdf Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
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IRG7T75HF12A Infineon Technologies IRG7T75HF12A.pdf Description: MOD IGBT 1200V 75A POWIR 34
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IRG7U50HF12A Infineon Technologies irg7u50hf12a.pdf Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
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CG8352AFT CG8352AFT Infineon Technologies Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CG8354AFT Infineon Technologies Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY8C4014SXI-411T CY8C4014SXI-411T Infineon Technologies PSoC_4000Family_DS.pdf Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
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CY7C13451G-100BZXE CY7C13451G-100BZXE Infineon Technologies Infineon-CY7C13451G_4-Mbit_(128K_X_36)_Flow-Through_Sync_SRAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc0e0445d4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1411KV18-250BZXC CY7C1411KV18-250BZXC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZXI CY7C2265KV18-550BZXI Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2663KV18-550BZXI CY7C2663KV18-550BZXI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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XMC4100Q48K128ABXUMA1 XMC4100Q48K128ABXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
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BTF3050TEATMA1 BTF3050TEATMA1 Infineon Technologies Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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TLF42772ELXUMA1 TLF42772ELXUMA1 Infineon Technologies Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16 Description: IC REG LIN POS ADJ 300MA 14SSOP
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BTF3050TEATMA1 BTF3050TEATMA1 Infineon Technologies Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
4+97.79 грн
10+68.71 грн
25+62.35 грн
100+51.91 грн
250+48.77 грн
500+46.87 грн
Мінімальне замовлення: 4
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AUIRF7640S2TR AUIRF7640S2TR Infineon Technologies auirf7640s2.pdf?fileId=5546d462533600a4015355ad6cb513ea Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4867 шт:
термін постачання 21-31 дні (днів)
2+161.94 грн
10+99.59 грн
100+67.76 грн
500+50.80 грн
1000+46.68 грн
2000+45.93 грн
Мінімальне замовлення: 2
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AUIR33402S AUIR33402S Infineon Technologies auir33402s.pdf?fileId=5546d462533600a4015355a88074135c Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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IRF100B202 IRF100B202 Infineon Technologies irf100b202.pdf?fileId=5546d462533600a4015355da4ec9187e Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V
на замовлення 1629 шт:
термін постачання 21-31 дні (днів)
3+147.86 грн
10+91.38 грн
100+62.22 грн
500+46.67 грн
1000+42.91 грн
Мінімальне замовлення: 3
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IRF7171MTRPBF IRF7171MTRPBF Infineon Technologies IRF7171MTRPBF.pdf Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
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IRFH7191TRPBF IRFH7191TRPBF Infineon Technologies IRFH7191PbF.pdf Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFI7446GPBF IRFI7446GPBF Infineon Technologies irfi7446gpbf.pdf Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
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IRGP4760D-EPBF IRGP4760D-EPBF Infineon Technologies IRGP4760D%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGS4715DTRLPBF IRGS4715DTRLPBF Infineon Technologies IRG(B,S)4715DPbF.pdf Description: IGBT 650V D2-PAK
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IRGS4715DTRRPBF IRGS4715DTRRPBF Infineon Technologies IRG(B,S)4715DPbF.pdf Description: IGBT 650V D2-PAK
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IRPLHID2A IRPLHID2A Infineon Technologies Infineon-IRPLHID2A-DS-v01_01-EN.pdf?fileId=5546d462533600a4015356a011722c87 Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
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IRSM505-015DA IRSM505-015DA Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
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IRSM505-015DA2 Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-015PA IRSM505-015PA Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA IRSM505-084DA Infineon Technologies IRSM5(0,1)5-084_Series.pdf Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA2 Infineon Technologies IRSM5%280%2C1%295-084_Series.pdf Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084PA IRSM505-084PA Infineon Technologies IRSM5(0,1)5-084_Series.pdf Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM515-015PA IRSM515-015PA Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC MOTOR DRIVER 600V 23SOP
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+897.34 грн
10+780.40 грн
25+744.14 грн
100+606.36 грн
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IRSM515-035DA2 Infineon Technologies irsm505-035.pdf Description: IC MOTOR DRIVER 600V 23DIP
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IRSM515-044DA2 Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC MOTOR DRIVER 600V 23DIP
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CY14B116L-ZS25XI CY14B116L-ZS25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
1+6568.47 грн
10+5611.84 грн
25+5350.35 грн
40+4899.51 грн
135+4597.84 грн
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CY14B116N-Z30XI CY14B116N-Z30XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116N-ZSP25XI CY14B116N-ZSP25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+7138.79 грн
10+6334.08 грн
25+6124.34 грн
50+5686.79 грн
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CY14B116N-ZSP45XI CY14B116N-ZSP45XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116S-BZ25XI CY14B116S-BZ25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY14V116N-BZ30XI CY14V116N-BZ30XI Infineon Technologies Infineon-CY14V116N_16-Mbit_(1024K_X_16)_nvSRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0aeea354b Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
1+5712.59 грн
10+4952.05 грн
25+4843.58 грн
40+4449.68 грн
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CY8C4014PVI-412 CY8C4014PVI-412 Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
2+200.28 грн
10+173.42 грн
25+163.60 грн
100+130.80 грн
250+122.82 грн
500+107.47 грн
1000+87.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4125AXI-473 CY8C4125AXI-473 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
2+242.52 грн
10+175.53 грн
25+161.19 грн
Мінімальне замовлення: 2
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CY8C4245AXI-473 CY8C4245AXI-473 Infineon Technologies Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)
1+315.28 грн
10+229.85 грн
25+211.45 грн
160+174.50 грн
320+168.32 грн
480+165.22 грн
960+158.04 грн
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IRG5U150HF06A IRG5U150HF06A.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 200A 660W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V
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IRG5U150HF12B IRG5U150HF12B.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 260A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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IRG5U400SD12B irg5u400sd12b.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 45.5 nF @ 25 V
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IRG5U50HF12A IRG5U50HF12A.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 85A 390W POWIR 34
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IRG5U50HH12E IRG5U50HH12E.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 85A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
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IRG5U75HF06A irg5u75hf06a.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 330W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IRG5U75HF12A IRG5U75HF12A.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 130A POWIR 34
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IRG5U75HH06E irg5u75hh06e.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IRG5U75HH12E IRG5U75HH12E.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 130A POWIR ECO 2
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IRG5W50HF06A irg5w50hf06a.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 75A 260W POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
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IRG7T100HF12A IRG7T100HF12A.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 575 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
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IRG7T100HF12B irg7t100hf12b.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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IRG7T200CL12B IRG7T200CL12B.pdf
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 390A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1060 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 22.5 nF @ 25 V
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IRG7T200HF12B
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 400A POWIR 62
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IRG7T300CL12B IRG7T300CL12B.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 42.4 nF @ 25 V
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IRG7T300HF12B IRG7T300HF12B.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A POWIR 62
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IRG7T400SD12B IRG7T400SD12B.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 780A POWIR 62
Packaging: Box
Package / Case: POWIR® 62 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: POWIR® 62
Current - Collector (Ic) (Max): 780 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2140 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 58.5 nF @ 25 V
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IRG7T50FF12E irg7t50ff12e.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A POWIR ECO 2
Packaging: Box
Package / Case: POWIR ECO 2™ Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: POWIR ECO 2™
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
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IRG7T50HF12A irg7t50hf12a.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
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IRG7T75HF12A IRG7T75HF12A.pdf
Виробник: Infineon Technologies
Description: MOD IGBT 1200V 75A POWIR 34
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IRG7U50HF12A irg7u50hf12a.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A POWIR 34
Packaging: Box
Package / Case: POWIR® 34 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: POWIR® 34
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
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CG8352AFT
CG8352AFT
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CG8354AFT
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY8C4014SXI-411T PSoC_4000Family_DS.pdf
CY8C4014SXI-411T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
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CY7C13451G-100BZXE Infineon-CY7C13451G_4-Mbit_(128K_X_36)_Flow-Through_Sync_SRAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc0e0445d4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C13451G-100BZXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1411KV18-250BZXC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1411KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-550BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2663KV18-550BZXI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2663KV18-550BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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XMC4100Q48K128ABXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100Q48K128ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-22
Part Status: Discontinued at Digi-Key
Number of I/O: 21
DigiKey Programmable: Not Verified
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BTF3050TEATMA1 Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f
BTF3050TEATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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TLF42772ELXUMA1 Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16
TLF42772ELXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA 14SSOP
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BTF3050TEATMA1 Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f
BTF3050TEATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.79 грн
10+68.71 грн
25+62.35 грн
100+51.91 грн
250+48.77 грн
500+46.87 грн
Мінімальне замовлення: 4
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AUIRF7640S2TR auirf7640s2.pdf?fileId=5546d462533600a4015355ad6cb513ea
AUIRF7640S2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4867 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+161.94 грн
10+99.59 грн
100+67.76 грн
500+50.80 грн
1000+46.68 грн
2000+45.93 грн
Мінімальне замовлення: 2
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AUIR33402S auir33402s.pdf?fileId=5546d462533600a4015355a88074135c
AUIR33402S
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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IRF100B202 irf100b202.pdf?fileId=5546d462533600a4015355da4ec9187e
IRF100B202
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 58A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 50 V
на замовлення 1629 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.86 грн
10+91.38 грн
100+62.22 грн
500+46.67 грн
1000+42.91 грн
Мінімальне замовлення: 3
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IRF7171MTRPBF IRF7171MTRPBF.pdf
IRF7171MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
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IRFH7191TRPBF IRFH7191PbF.pdf
IRFH7191TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
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IRFI7446GPBF irfi7446gpbf.pdf
IRFI7446GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
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IRGP4760D-EPBF IRGP4760D%28-E%29PbF.pdf
IRGP4760D-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGS4715DTRLPBF IRG(B,S)4715DPbF.pdf
IRGS4715DTRLPBF
Виробник: Infineon Technologies
Description: IGBT 650V D2-PAK
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IRGS4715DTRRPBF IRG(B,S)4715DPbF.pdf
IRGS4715DTRRPBF
Виробник: Infineon Technologies
Description: IGBT 650V D2-PAK
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IRPLHID2A Infineon-IRPLHID2A-DS-v01_01-EN.pdf?fileId=5546d462533600a4015356a011722c87
IRPLHID2A
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
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IRSM505-015DA irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
IRSM505-015DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
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IRSM505-015DA2 irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-015PA irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
IRSM505-015PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA IRSM5(0,1)5-084_Series.pdf
IRSM505-084DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084DA2 IRSM5%280%2C1%295-084_Series.pdf
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM505-084PA IRSM5(0,1)5-084_Series.pdf
IRSM505-084PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM515-015PA irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
IRSM515-015PA
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23SOP
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+897.34 грн
10+780.40 грн
25+744.14 грн
100+606.36 грн
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IRSM515-035DA2 irsm505-035.pdf
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
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IRSM515-044DA2 IRSM505-044_IRSM515-044_Series.pdf
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
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CY14B116L-ZS25XI download
CY14B116L-ZS25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6568.47 грн
10+5611.84 грн
25+5350.35 грн
40+4899.51 грн
135+4597.84 грн
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CY14B116N-Z30XI download
CY14B116N-Z30XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116N-ZSP25XI download
CY14B116N-ZSP25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7138.79 грн
10+6334.08 грн
25+6124.34 грн
50+5686.79 грн
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CY14B116N-ZSP45XI download
CY14B116N-ZSP45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116S-BZ25XI download
CY14B116S-BZ25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY14V116N-BZ30XI Infineon-CY14V116N_16-Mbit_(1024K_X_16)_nvSRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0aeea354b
CY14V116N-BZ30XI
Виробник: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5712.59 грн
10+4952.05 грн
25+4843.58 грн
40+4449.68 грн
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CY8C4014PVI-412 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014PVI-412
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.28 грн
10+173.42 грн
25+163.60 грн
100+130.80 грн
250+122.82 грн
500+107.47 грн
1000+87.58 грн
Мінімальне замовлення: 2
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CY8C4125AXI-473 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-473
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.52 грн
10+175.53 грн
25+161.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4245AXI-473 Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4245AXI-473
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+315.28 грн
10+229.85 грн
25+211.45 грн
160+174.50 грн
320+168.32 грн
480+165.22 грн
960+158.04 грн
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