Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129562) > Сторінка 303 з 2160

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
593995-005-69 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CG7380AM Infineon Technologies Description: IC FLASH 40QFN 1MM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25640B-G2 FM25640B-G2 Infineon Technologies Infineon-FM25640B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf9d63113&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4248FNI-BL583T CY8C4248FNI-BL583T Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SPP80N06S08NK SPP80N06S08NK Infineon Technologies Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE42712SNKSA1 TLE42712SNKSA1 Infineon Technologies TLE4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-12
Packaging: Tube
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
товару немає в наявності
В кошику  од. на суму  грн.
D475N32BS20XPSA1 Infineon Technologies Description: MOD DIODE RECTIFIER
товару немає в наявності
В кошику  од. на суму  грн.
DD25DS2016KKHPSA1 DD25DS2016KKHPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
товару немає в наявності
В кошику  од. на суму  грн.
T860N32TOFS01XPSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
товару немає в наявності
В кошику  од. на суму  грн.
IRGS4B60KPBF IRGS4B60KPBF Infineon Technologies Description: IGBT 600V D2PAK-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R045C7300XKSA1 IPW65R045C7300XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BFR740EL3E6829XTSA1 BFR740EL3E6829XTSA1 Infineon Technologies Infineon-BFR740EL3-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663896f5f94ec8 Description: RF TRANS NPN 42GHZ PG-TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 1.5dB @ 12GHz
Supplier Device Package: PG-TSLP-3-10
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
BGS13S4N9E6327XTSA1 BGS13S4N9E6327XTSA1 Infineon Technologies Infineon-BGS13S4N9-DS-v01_00-EN.pdf?fileId=5546d46262475fbe016248809d333d02 Description: IC RF SWITCH SP3T TSNP9-3
товару немає в наявності
В кошику  од. на суму  грн.
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Infineon Technologies infineon-bsc010n04lst-datasheet-en.pdf Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC011N03LSTATMA1 BSC011N03LSTATMA1 Infineon Technologies Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC014N04LSTATMA1 BSC014N04LSTATMA1 Infineon Technologies Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC014N06NSTATMA1 BSC014N06NSTATMA1 Infineon Technologies Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+56.27 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC016N06NSTATMA1 BSC016N06NSTATMA1 Infineon Technologies Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+53.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC028N06NSTATMA1 BSC028N06NSTATMA1 Infineon Technologies Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1 Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 Infineon Technologies infineon-iaut150n10s5n035-datasheet-en.pdf Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 Infineon Technologies infineon-iaut260n10s5n019-datasheet-cn.pdf Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+143.79 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 Infineon Technologies infineon-iaut300n10s5n015-datasheet-en.pdf Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5ASAGXUMA1 ICE5ASAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+25.90 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IDFW40E65D1EXKSA1 IDFW40E65D1EXKSA1 Infineon Technologies Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5 Description: DIODE GP 650V 42A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+411.73 грн
10+264.12 грн
В кошику  од. на суму  грн.
IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 Infineon Technologies infineon-ikfw40n60dh3e-datasheet-cn.pdf Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
1+542.38 грн
30+299.47 грн
120+250.48 грн
В кошику  од. на суму  грн.
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 Infineon Technologies infineon-ikfw50n60dh3e-datasheet-cn.pdf Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
товару немає в наявності
 Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IKFW50N60DH3XKSA1 IKFW50N60DH3XKSA1 Infineon Technologies infineon-ikfw50n60dh3-datasheet-cn.pdf Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/212ns
Switching Energy: 1.22mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 145 W
товару немає в наявності
 Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 Infineon Technologies infineon-ikfw60n60dh3e-datasheet-cn.pdf Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
товару немає в наявності
 Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 Infineon Technologies Infineon-IPAN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499adf55405f Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74 Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN70R2K0P7SATMA1 IPN70R2K0P7SATMA1 Infineon Technologies Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76 Description: MOSFET N-CH 700V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.37 грн
6000+10.93 грн
9000+10.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN70R450P7SATMA1 IPN70R450P7SATMA1 Infineon Technologies Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78 Description: MOSFET N-CH 700V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 Infineon Technologies infineon-ipn80r1k2p7-ds-en.pdf Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies infineon-ipn80r3k3p7-ds-en.pdf Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R600P7ATMA1 IPN80R600P7ATMA1 Infineon Technologies infineon-ipn80r600p7-datasheet-en.pdf Description: MOSFET N-CH 800V 8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+45.61 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R750P7ATMA1 IPN80R750P7ATMA1 Infineon Technologies infineon-ipn80r750p7-ds-en.pdf Description: MOSFET N-CH 800V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS65R1K0CEAKMA2 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: CONSUMER
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
CY8C5266FNI-LP205T CY8C5266FNI-LP205T Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
S25FL032P0XMFA000 S25FL032P0XMFA000 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFA003 S25FL032P0XMFA003 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XNFA010 S25FL032P0XNFA010 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XNFA013 S25FL032P0XNFA013 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LDPBHV030 S25FL128LDPBHV030 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LDPBHV033 S25FL128LDPBHV033 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
товару немає в наявності
В кошику  од. на суму  грн.
S25FS128SAGNFI003 S25FS128SAGNFI003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S25FS128SDSBHM200 S25FS128SDSBHM200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
S29GL01GT10FAI030 S29GL01GT10FAI030 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
S29GL01GT10FHI040 S29GL01GT10FHI040 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
S70FL01GSDSMFB010 S70FL01GSDSMFB010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
товару немає в наявності
 Мінімальне замовлення: 2400 шт
В кошику  од. на суму  грн.
S70FL01GSDSMFV010 S70FL01GSDSMFV010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
товару немає в наявності
 Мінімальне замовлення: 2400 шт
В кошику  од. на суму  грн.
S70KL1281DABHV023 S70KL1281DABHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
В кошику  од. на суму  грн.
S70KS1281DPBHV023 S70KS1281DPBHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies infineon-ipb60r060p7-datasheet-en.pdf Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 11352 шт:
термін постачання 21-31 дні (днів)
1+493.29 грн
10+318.87 грн
50+251.77 грн
100+216.03 грн
500+200.89 грн
В кошику  од. на суму  грн.
IPB60R080P7ATMA1 IPB60R080P7ATMA1 Infineon Technologies infineon-ipb60r080p7-datasheet-en.pdf Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
1+404.61 грн
10+259.85 грн
50+203.96 грн
100+174.53 грн
500+157.26 грн
В кошику  од. на суму  грн.
IPB60R099P7ATMA1 IPB60R099P7ATMA1 Infineon Technologies infineon-ipb60r099p7-ds-en.pdf Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 21133 шт:
термін постачання 21-31 дні (днів)
1+368.98 грн
10+234.99 грн
50+183.57 грн
100+156.73 грн
500+129.63 грн
В кошику  од. на суму  грн.
IPB60R120P7ATMA1 IPB60R120P7ATMA1 Infineon Technologies infineon-ipb60r120p7-datasheet-en.pdf Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
2+311.18 грн
10+197.33 грн
50+153.17 грн
100+130.41 грн
500+110.36 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
593995-005-69
Виробник: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CG7380AM
Виробник: Infineon Technologies
Description: IC FLASH 40QFN 1MM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25640B-G2 Infineon-FM25640B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf9d63113&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25640B-G2
Виробник: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4248FNI-BL583T ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4248FNI-BL583T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
SPP80N06S08NK
SPP80N06S08NK
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE42712SNKSA1 TLE4271-2.pdf
TLE42712SNKSA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-12
Packaging: Tube
Package / Case: TO-220-7
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-7-12
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
товару немає в наявності
В кошику  од. на суму  грн.
D475N32BS20XPSA1
Виробник: Infineon Technologies
Description: MOD DIODE RECTIFIER
товару немає в наявності
В кошику  од. на суму  грн.
DD25DS2016KKHPSA1
DD25DS2016KKHPSA1
Виробник: Infineon Technologies
Description: MOD DIODE THYRISTOR
товару немає в наявності
В кошику  од. на суму  грн.
T860N32TOFS01XPSA1
Виробник: Infineon Technologies
Description: MOD DIODE THYRISTOR
товару немає в наявності
В кошику  од. на суму  грн.
IRGS4B60KPBF
IRGS4B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V D2PAK-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R045C7300XKSA1
IPW65R045C7300XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BFR740EL3E6829XTSA1 Infineon-BFR740EL3-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663896f5f94ec8
BFR740EL3E6829XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 42GHZ PG-TSLP-3-10
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 1.5dB @ 12GHz
Supplier Device Package: PG-TSLP-3-10
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
BGS13S4N9E6327XTSA1 Infineon-BGS13S4N9-DS-v01_00-EN.pdf?fileId=5546d46262475fbe016248809d333d02
BGS13S4N9E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T TSNP9-3
товару немає в наявності
В кошику  од. на суму  грн.
BSC010N04LSTATMA1 infineon-bsc010n04lst-datasheet-en.pdf
BSC010N04LSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC011N03LSTATMA1 Infineon-BSC011N03LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605467a7822cad
BSC011N03LSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
BSC014N04LSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
BSC014N06NSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+56.27 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
BSC016N06NSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+53.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSC028N06NSTATMA1 Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb
BSC028N06NSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC097N06NSTATMA1 Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1
BSC097N06NSTATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IAUT150N10S5N035ATMA1 infineon-iaut150n10s5n035-datasheet-en.pdf
IAUT150N10S5N035ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IAUT260N10S5N019ATMA1 infineon-iaut260n10s5n019-datasheet-cn.pdf
IAUT260N10S5N019ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+143.79 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IAUT300N10S5N015ATMA1 infineon-iaut300n10s5n015-datasheet-en.pdf
IAUT300N10S5N015ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR0680AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5ASAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5ASAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+25.90 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE5GR1680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR1680AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IDFW40E65D1EXKSA1 Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5
IDFW40E65D1EXKSA1
Виробник: Infineon Technologies
Description: DIODE GP 650V 42A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+411.73 грн
10+264.12 грн
В кошику  од. на суму  грн.
IKFW40N60DH3EXKSA1 infineon-ikfw40n60dh3e-datasheet-cn.pdf
IKFW40N60DH3EXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+542.38 грн
30+299.47 грн
120+250.48 грн
В кошику  од. на суму  грн.
IKFW50N60DH3EXKSA1 infineon-ikfw50n60dh3e-datasheet-cn.pdf
IKFW50N60DH3EXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IKFW50N60DH3XKSA1 infineon-ikfw50n60dh3-datasheet-cn.pdf
IKFW50N60DH3XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/212ns
Switching Energy: 1.22mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 145 W
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IKFW60N60DH3EXKSA1 infineon-ikfw60n60dh3e-datasheet-cn.pdf
IKFW60N60DH3EXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
IPAN70R450P7SXKSA1 Infineon-IPAN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499adf55405f
IPAN70R450P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPN70R1K2P7SATMA1 Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74
IPN70R1K2P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN70R2K0P7SATMA1 Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76
IPN70R2K0P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+12.37 грн
6000+10.93 грн
9000+10.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN70R450P7SATMA1 Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78
IPN70R450P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R1K2P7ATMA1 infineon-ipn80r1k2p7-ds-en.pdf
IPN80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R3K3P7ATMA1 infineon-ipn80r3k3p7-ds-en.pdf
IPN80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R600P7ATMA1 infineon-ipn80r600p7-datasheet-en.pdf
IPN80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+45.61 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPN80R750P7ATMA1 infineon-ipn80r750p7-ds-en.pdf
IPN80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS65R1K0CEAKMA2 Infineon-IPS65R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
Виробник: Infineon Technologies
Description: CONSUMER
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
CY8C5266FNI-LP205T download
CY8C5266FNI-LP205T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
S25FL032P0XMFA000 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA000
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XMFA003 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA003
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XNFA010 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA010
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL032P0XNFA013 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA013
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LDPBHV030 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV030
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LDPBHV033 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV033
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
товару немає в наявності
В кошику  од. на суму  грн.
S25FS128SAGNFI003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGNFI003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S25FS128SDSBHM200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SDSBHM200
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
S29GL01GT10FAI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FAI030
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
S29GL01GT10FHI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI040
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
S70FL01GSDSMFB010 download
S70FL01GSDSMFB010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику  од. на суму  грн.
S70FL01GSDSMFV010 download
S70FL01GSDSMFV010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику  од. на суму  грн.
S70KL1281DABHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHV023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
В кошику  од. на суму  грн.
S70KS1281DPBHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHV023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R060P7ATMA1 infineon-ipb60r060p7-datasheet-en.pdf
IPB60R060P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 11352 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+493.29 грн
10+318.87 грн
50+251.77 грн
100+216.03 грн
500+200.89 грн
В кошику  од. на суму  грн.
IPB60R080P7ATMA1 infineon-ipb60r080p7-datasheet-en.pdf
IPB60R080P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+404.61 грн
10+259.85 грн
50+203.96 грн
100+174.53 грн
500+157.26 грн
В кошику  од. на суму  грн.
IPB60R099P7ATMA1 infineon-ipb60r099p7-ds-en.pdf
IPB60R099P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 21133 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+368.98 грн
10+234.99 грн
50+183.57 грн
100+156.73 грн
500+129.63 грн
В кошику  од. на суму  грн.
IPB60R120P7ATMA1 infineon-ipb60r120p7-datasheet-en.pdf
IPB60R120P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+311.18 грн
10+197.33 грн
50+153.17 грн
100+130.41 грн
500+110.36 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.