Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149671) > Сторінка 301 з 2495
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
| FF300R17ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 375A 1800W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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FP30R06W1E3BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 37A 115WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 37 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 115 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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FF450R07ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 560A 1450W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| F3L50R06W1E3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE VCES 600V 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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FP50R06W2E3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 65A 175WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FP50R07N2E4BOSA1 | Infineon Technologies |
Description: IGBT MODULE 650V 70A |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FP50R07N2E4B11BOSA1 | Infineon Technologies |
Description: IGBT MODULE 650V 70APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FP50R12KT3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 75A 280W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FP50R12KT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 50A 280W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FP50R12KT4GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 50A 280WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| FF600R06ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 700A 1650WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 700 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1650 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 39 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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FF600R07ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 700A 1800WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 700 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1800 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FF600R12ME4AB11BOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 3350WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4CB11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1060A 4050WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1060 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 4050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| FF600R12ME4CPB11BPSA1 | Infineon Technologies |
Description: IGBT MODULE VCES 600V 600APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1060 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 4050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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FF600R17ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MODULE VCES 1700V 600APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 48 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FF600R17ME4PBOSA1 | Infineon Technologies |
Description: IGBT MODULE VCES 1200V 600APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 48 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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F475R12KS4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 500WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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F475R12KS4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 500WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FP75R12KT3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 105A 355W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 355 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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FP75R12KT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 75A 385WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| FP75R17N3E4BPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 125A 555WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 555 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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FS150R07N3E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 150A 430WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FS150R12KT3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 700W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 700 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FS150R12KT4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 150A 750WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 750 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FS150R12PT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 680WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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F3L200R12W2H3B11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 600W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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DF300R12KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 480A 1470WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1470 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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F3L300R07PE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 300A 940WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 940 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FF400R12KT3EHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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F3L400R07ME4B22BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 450A 1150WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1150 W Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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FD400R12KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FD400R33KF2CKNOSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 660A 4800WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 660 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 4800 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 50 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| DF900R12IP4DBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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DF900R12IP4DVBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| D121K18BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.8KV 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D121N12BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 230A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D121N16BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.6KV 230A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D1030N26TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.6KV 1030A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D3501N40TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4KV 4870A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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D255N06BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 255APackaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 255A Operating Temperature - Junction: -40°C ~ 180°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| D3001N58TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 5.8KV 3910A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D3001N60T | Infineon Technologies |
Description: DIODE GEN PURP 6KV 3910A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D3001N65T | Infineon Technologies |
Description: DIODE GEN PURP 6.5KV 3910A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D3001N68TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 6.8KV 3910A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D3041N60TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 6KV 4090A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D801S45T | Infineon Technologies |
Description: DIODE GEN PURP 4.5KV 1570A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| D170S25CXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.5KV 255A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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D170U25CXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.5KV 210APackaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 210A Operating Temperature - Junction: -40°C ~ 140°C Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A Current - Reverse Leakage @ Vr: 5 mA @ 2500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| DD61S14KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 76A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| DD61S14KKHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 76A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| DD89N14KKHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 140APackaging: Bulk Package / Case: POW-R-BLOK™ Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 89A Supplier Device Package: POW-R-BLOK™ Module Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
DD89N16KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1600V 89APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 89A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
|
||||
| DD98N22KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2200V 98A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| DD241S14KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 240A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| DD241S14KAHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 410A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| DD241S14KKHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 410A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
DD350N18KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1800V 350A |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||
|
DD600N14KHPSA2 | Infineon Technologies |
Description: DIODE MOD GP 1400V 600A MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A Current - Reverse Leakage @ Vr: 40 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
DD180N16SHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.6KV 192APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 192A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A Current - Reverse Leakage @ Vr: 1 mA @ 1600 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
| FF300R17ME4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Description: IGBT MOD 1700V 375A 1800W
товару немає в наявності
В кошику
од. на суму грн.
| FP30R06W1E3BOMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 37A 115W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE 600V 37A 115W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 115 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3258.24 грн |
| FF450R07ME4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 560A 1450W
Description: IGBT MOD 650V 560A 1450W
товару немає в наявності
В кошику
од. на суму грн.
| F3L50R06W1E3B11BOMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 600V 50A
Description: IGBT MODULE VCES 600V 50A
товару немає в наявності
В кошику
од. на суму грн.
| FP50R06W2E3B11BOMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 65A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Description: IGBT MODULE 600V 65A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FP50R07N2E4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 70A
Description: IGBT MODULE 650V 70A
товару немає в наявності
В кошику
од. на суму грн.
| FP50R07N2E4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Description: IGBT MODULE 650V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FP50R12KT3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: IGBT MOD 1200V 75A 280W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6816.58 грн |
| FP50R12KT4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Description: IGBT MOD 1200V 50A 280W
товару немає в наявності
В кошику
од. на суму грн.
| FP50R12KT4GBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6296.97 грн |
| FF600R06ME3BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 600V 700A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Description: IGBT MOD 600V 700A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF600R07ME4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 700A 1800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 650V 700A 1800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF600R12ME4AB11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 3350W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MODULE 1200V 3350W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19237.03 грн |
| FF600R12ME4CB11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1060A 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 1060A 4050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF600R12ME4CPB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 600V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MODULE VCES 600V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF600R17ME4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 1700V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Description: IGBT MODULE VCES 1700V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF600R17ME4PBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Description: IGBT MODULE VCES 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18759.35 грн |
| F475R12KS4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| F475R12KS4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FP75R12KT3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7496.51 грн |
| FP75R12KT4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FP75R17N3E4BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 125A 555W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1700V 125A 555W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS150R07N3E4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS150R12KT3BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 700W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Description: IGBT MOD 1200V 200A 700W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8455.97 грн |
| FS150R12KT4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MOD 1200V 150A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9469.70 грн |
| FS150R12PT4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MOD 1200V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| F3L200R12W2H3B11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
Description: IGBT MOD 1200V 100A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4731.56 грн |
| DF300R12KE3HOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 480A 1470W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1470 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MOD 1200V 480A 1470W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1470 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| F3L300R07PE4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 300A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 650V 300A 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18513.53 грн |
| FF400R12KT3EHOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| F3L400R07ME4B22BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FD400R12KE3HOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12301.24 грн |
| 10+ | 10644.77 грн |
| FD400R33KF2CKNOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| DF900R12IP4DBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Description: IGBT MOD 1200V 900A 5100W
товару немає в наявності
В кошику
од. на суму грн.
| DF900R12IP4DVBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| D121K18BXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 210A
Description: DIODE GEN PURP 1.8KV 210A
товару немає в наявності
В кошику
од. на суму грн.
| D121N12BXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 230A
Description: DIODE GEN PURP 1.2KV 230A
товару немає в наявності
В кошику
од. на суму грн.
| D121N16BXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.6KV 230A
Description: DIODE GEN PURP 1.6KV 230A
товару немає в наявності
В кошику
од. на суму грн.
| D1030N26TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 1030A
Description: DIODE GEN PURP 2.6KV 1030A
товару немає в наявності
В кошику
од. на суму грн.
| D3501N40TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4KV 4870A
Description: DIODE GEN PURP 4KV 4870A
товару немає в наявності
В кошику
од. на суму грн.
| D255N06BXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE GEN PURP 600V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| D3001N58TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 5.8KV 3910A
Description: DIODE GEN PURP 5.8KV 3910A
товару немає в наявності
В кошику
од. на суму грн.
| D3001N60T |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6KV 3910A
Description: DIODE GEN PURP 6KV 3910A
товару немає в наявності
В кошику
од. на суму грн.
| D3001N65T |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.5KV 3910A
Description: DIODE GEN PURP 6.5KV 3910A
товару немає в наявності
В кошику
од. на суму грн.
| D3001N68TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.8KV 3910A
Description: DIODE GEN PURP 6.8KV 3910A
товару немає в наявності
В кошику
од. на суму грн.
| D3041N60TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 6KV 4090A
Description: DIODE GEN PURP 6KV 4090A
товару немає в наявності
В кошику
од. на суму грн.
| D801S45T |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1570A
Description: DIODE GEN PURP 4.5KV 1570A
товару немає в наявності
В кошику
од. на суму грн.
| D170S25CXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.5KV 255A
Description: DIODE GEN PURP 2.5KV 255A
товару немає в наявності
В кошику
од. на суму грн.
| D170U25CXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.5KV 210A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 210A
Operating Temperature - Junction: -40°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
Description: DIODE GEN PURP 2.5KV 210A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 210A
Operating Temperature - Junction: -40°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
товару немає в наявності
В кошику
од. на суму грн.
| DD61S14KHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 76A
Description: DIODE MODULE GP 1400V 76A
товару немає в наявності
В кошику
од. на суму грн.
| DD61S14KKHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 76A
Description: DIODE MODULE GP 1400V 76A
товару немає в наявності
В кошику
од. на суму грн.
| DD89N14KKHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Description: DIODE ARRAY MOD 1200V 140A
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
товару немає в наявності
В кошику
од. на суму грн.
| DD89N16KHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Description: DIODE MODULE GP 1600V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9062.73 грн |
| 15+ | 7420.59 грн |
| DD98N22KHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 2200V 98A
Description: DIODE MODULE GP 2200V 98A
товару немає в наявності
В кошику
од. на суму грн.
| DD241S14KHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 240A
Description: DIODE MODULE GP 1400V 240A
товару немає в наявності
В кошику
од. на суму грн.
| DD241S14KAHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 410A
Description: DIODE ARRAY MOD 1200V 410A
товару немає в наявності
В кошику
од. на суму грн.
| DD241S14KKHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 410A
Description: DIODE ARRAY MOD 1200V 410A
товару немає в наявності
В кошику
од. на суму грн.
| DD350N18KHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V 350A
Description: DIODE MODULE GP 1800V 350A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17522.00 грн |
| DD600N14KHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MOD GP 1400V 600A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Description: DIODE MOD GP 1400V 600A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
товару немає в наявності
В кошику
од. на суму грн.
| DD180N16SHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 192A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Description: DIODE MODULE GP 1.6KV 192A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3817.32 грн |




















