Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123050) > Сторінка 300 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IPN70R900P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 6.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPN80R900P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 800V 6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 110µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPP60R060P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 48A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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IPP60R120P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 26A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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IPP60R280P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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IPW60R060P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 48A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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IRPS5401MTRPBF | Infineon Technologies |
Description: POL - SUPIRBUCKPackaging: Tape & Reel (TR) Package / Case: 56-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 6V ~ 14V Applications: Power Management - Communications, Storage, Embedded Computing & High Density Multi-Rail Systems Current - Supply: 40mA Supplier Device Package: 56-QFN (7x7) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRS2007SPBF | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 600MA 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 20V Applications: Battery Powered Current - Output / Channel: 600mA Technology: Power MOSFET Voltage - Load: 200V Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRS2007STRPBF | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 600MA 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 20V Applications: Battery Powered Current - Output / Channel: 600mA Technology: Power MOSFET Voltage - Load: 200V Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SLF9630VQFN8XUMA2 | Infineon Technologies |
Description: TRANSPORT TICKETINGPackaging: Tape & Reel (TR) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Interface: ISO7816 Operating Temperature: -25°C ~ 85°C Applications: Security Core Processor: 16-Bit Supplier Device Package: 8-VFQFPN (6x5) Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SLJ52ACA150A1VQFN32XUMA2 | Infineon Technologies |
Description: AUTHENTICATION Packaging: Tape & Reel (TR) Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE4278GXUMA2 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-30 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-30 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Watchdog Grade: Automotive Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 12 mA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLF35584QKVS2XUMA2 | Infineon Technologies |
Description: IC REG AUTO APPL 1OUT LQFP64-18Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Voltage - Output: 3.3V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3V ~ 40V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-LQFP-64-18 Part Status: Active |
на замовлення 1045 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1045 шт В кошику од. на суму грн. | ||||||||||||||||
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TLF35584QVVS2XUMA2 | Infineon Technologies |
Description: IC REG AUTO APPL 1OUT VQFN-48-31Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 3.3V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3V ~ 40V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-VQFN-48-31 Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLS202B1MBV50HTSA1 | Infineon Technologies |
Description: IC REG LIN 5V 150MA PG-SCT595-5Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 58dB (10kHz) Voltage Dropout (Max): 0.57V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 200 µA Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XMC4300F100K256AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100LQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 256KB (256K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 14x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT Supplier Device Package: PG-LQFP-100-25 Part Status: Active Number of I/O: 75 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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AUIRB24427S | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPS52GB | Infineon Technologies |
Description: IC MOSFET POWER SWITCH TO220 Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MB3773PF-GT-BNDK5E1 | Infineon Technologies |
Description: IC SUPERVISOR PWR SUP MONITORPackaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MB3773PF-GT-BND-K5ERE1 | Infineon Technologies |
Description: IC POWER SUPPLY MONITORPackaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FF600R12IS4F | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3700W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3700 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 39 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPN60R360P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 9A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
на замовлення 6877 шт: термін постачання 21-31 дні (днів) |
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IPN60R600P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
на замовлення 8957 шт: термін постачання 21-31 дні (днів) |
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IPN70R360P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 12.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V Power Dissipation (Max): 7.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPN70R600P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 8.5A SOT223Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 6.9W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 2916 шт: термін постачання 21-31 дні (днів) |
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IPN70R900P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Power Dissipation (Max): 6.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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IPN70R1K4P7SATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 700V 4A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V Power Dissipation (Max): 6.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V |
на замовлення 47329 шт: термін постачання 21-31 дні (днів) |
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IPN80R900P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 800V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 110µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD60R280P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD60R180P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 18A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V |
на замовлення 9059 шт: термін постачання 21-31 дні (днів) |
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IPD60R280P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 10422 шт: термін постачання 21-31 дні (днів) |
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IPD60R360P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
на замовлення 1844 шт: термін постачання 21-31 дні (днів) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 33674 шт: термін постачання 21-31 дні (днів) |
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DF11MR12W1M1B11BOMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Vgs(th) (Max) @ Id: 5.5V @ 20mA Supplier Device Package: AG-EASY1BM-2 |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||||||
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BSC110N15NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 76A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 91µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V |
на замовлення 27326 шт: термін постачання 21-31 дні (днів) |
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ESD110B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 18.5VWM 29VC PGTSLP220Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29V Power - Peak Pulse: 58W Power Line Protection: No |
на замовлення 14999 шт: термін постачання 21-31 дні (днів) |
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AUIRS21811STR | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 60ns, 35ns (Max) Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 4818 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Infineon Technologies |
Description: MOSFET N-CH 150V 4.4A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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AUIRS21271STR | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Grade: Automotive Part Status: Not For New Designs DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2471 шт: термін постачання 21-31 дні (днів) |
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BAS7004WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V 70MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 7600 шт: термін постачання 21-31 дні (днів) |
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IPT111N20NFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 96A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V |
на замовлення 3878 шт: термін постачання 21-31 дні (днів) |
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TLE5012BE3005XUMA1 | Infineon Technologies |
Description: SPEED SENSORS 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: SENT, SPI Operating Temperature: -40°C ~ 150°C (TJ) Termination Style: SMD (SMT) Tab Voltage - Supply: 3V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-DSO-8 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11587 шт: термін постачання 21-31 дні (днів) |
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ICE2QS02GXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DSOPart Status: Active Voltage - Start Up: 12 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage Supplier Device Package: PG-DSO-8 Voltage - Supply (Vcc/Vdd): 11V ~ 25V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 20kHz ~ 150kHz Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 5818 шт: термін постачання 21-31 дні (днів) |
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PVT212S-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-150VApproval Agency: UL Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 750 mOhms Voltage - Load: 0 V ~ 150 V Part Status: Active Supplier Device Package: 6-SMT Load Current: 550 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD (0.300", 7.62mm) Packaging: Cut Tape (CT) |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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PVT412AS-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 240MA 0-400VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 240 mA Supplier Device Package: 6-SMT Part Status: Active Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 6 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 969 шт: термін постачання 21-31 дні (днів) |
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IPT65R033G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 69A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC160N15NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 56A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 60µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V |
на замовлення 8078 шт: термін постачання 21-31 дні (днів) |
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IPD80R2K8CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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IPB015N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V |
на замовлення 2892 шт: термін постачання 21-31 дні (днів) |
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BAR6503WE6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 30V 250MW PG-SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz Resistance @ If, F: 900mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: PG-SOD323-3D Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 11254 шт: термін постачання 21-31 дні (днів) |
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BAS7005WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V 70MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 1419 шт: термін постачання 21-31 дні (днів) |
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BTS500151TADATMA2 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Ratio - Input:Output: 1:1 Supplier Device Package: TO-263-7 Fault Protection: Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1293 шт: термін постачання 21-31 дні (днів) |
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| TLE9879QXA40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SSI, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5.5V ~ 28V Program Memory Type: FLASH (128kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: 48-VQFN (7x7) Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4801 шт: термін постачання 21-31 дні (днів) |
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IFX1763XEJV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 500MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.45V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 31 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IFX54441EJV50XUMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA 8DSO E-PADPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.41V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 12 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IFX54441LDV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 300MA TSON-10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XDPL8105XUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 180kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: 8-SOIC Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V |
на замовлення 34555 шт: термін постачання 21-31 дні (днів) |
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TLD1125ELXUMA1 | Infineon Technologies |
Description: IC LED DRVR LIN PWM 360MA 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 360mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-EP Dimming: PWM Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Grade: Automotive Part Status: Active |
на замовлення 4988 шт: термін постачання 21-31 дні (днів) |
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TLD1311ELXUMA1 | Infineon Technologies |
Description: IC LED DRVR LINEAR 120MA 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Grade: Automotive Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLD1326ELXUMA1 | Infineon Technologies |
Description: IC LED DRVR LIN PWM 120MA 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Dimming: PWM Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. |
| IPN70R900P7SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPN80R900P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| IPP60R060P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.15 грн |
| 50+ | 191.70 грн |
| 100+ | 175.06 грн |
| IPP60R120P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Description: MOSFET N-CH 600V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.99 грн |
| 50+ | 133.05 грн |
| 100+ | 120.54 грн |
| IPP60R280P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.56 грн |
| 50+ | 70.14 грн |
| 100+ | 62.96 грн |
| IPW60R060P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Description: MOSFET N-CH 600V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 405.28 грн |
| 30+ | 222.42 грн |
| 120+ | 185.35 грн |
| 510+ | 149.38 грн |
| IRPS5401MTRPBF |
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Виробник: Infineon Technologies
Description: POL - SUPIRBUCK
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 14V
Applications: Power Management - Communications, Storage, Embedded Computing & High Density Multi-Rail Systems
Current - Supply: 40mA
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Description: POL - SUPIRBUCK
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 14V
Applications: Power Management - Communications, Storage, Embedded Computing & High Density Multi-Rail Systems
Current - Supply: 40mA
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| IRS2007SPBF |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
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| IRS2007STRPBF |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| SLF9630VQFN8XUMA2 |
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Виробник: Infineon Technologies
Description: TRANSPORT TICKETING
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Interface: ISO7816
Operating Temperature: -25°C ~ 85°C
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: 8-VFQFPN (6x5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: TRANSPORT TICKETING
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Interface: ISO7816
Operating Temperature: -25°C ~ 85°C
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: 8-VFQFPN (6x5)
Part Status: Active
DigiKey Programmable: Not Verified
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| SLJ52ACA150A1VQFN32XUMA2 |
Виробник: Infineon Technologies
Description: AUTHENTICATION
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Description: AUTHENTICATION
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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| TLE4278GXUMA2 |
Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TLF35584QKVS2XUMA2 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
на замовлення 1045 шт:
термін постачання 21-31 дні (днів)
| TLF35584QVVS2XUMA2 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 232.95 грн |
| TLS202B1MBV50HTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 34.37 грн |
| XMC4300F100K256AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1000 шт
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| AUIRB24427S |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Description: IC GATE DRVR LOW-SIDE 8SOIC
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| IPS52GB |
Виробник: Infineon Technologies
Description: IC MOSFET POWER SWITCH TO220
Packaging: Tube
Part Status: Obsolete
Description: IC MOSFET POWER SWITCH TO220
Packaging: Tube
Part Status: Obsolete
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| MB3773PF-GT-BNDK5E1 |
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Виробник: Infineon Technologies
Description: IC SUPERVISOR PWR SUP MONITOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR PWR SUP MONITOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| MB3773PF-GT-BND-K5ERE1 |
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Виробник: Infineon Technologies
Description: IC POWER SUPPLY MONITOR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC POWER SUPPLY MONITOR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| FF600R12IS4F |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Description: IGBT MOD 1200V 600A 3700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
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| IPN60R360P7SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 6877 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 55.52 грн |
| 100+ | 36.68 грн |
| 500+ | 26.81 грн |
| 1000+ | 24.36 грн |
| IPN60R600P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 8957 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.92 грн |
| 10+ | 49.92 грн |
| 100+ | 32.74 грн |
| 500+ | 23.80 грн |
| 1000+ | 21.58 грн |
| IPN70R360P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPN70R600P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 8.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 2916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.17 грн |
| 10+ | 45.22 грн |
| 100+ | 29.66 грн |
| 500+ | 21.55 грн |
| 1000+ | 19.53 грн |
| IPN70R900P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.27 грн |
| 10+ | 47.01 грн |
| IPN70R1K4P7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
на замовлення 47329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.68 грн |
| 100+ | 21.18 грн |
| 500+ | 15.21 грн |
| 1000+ | 13.70 грн |
| IPN80R900P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R280P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R180P7SAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 9059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.38 грн |
| 10+ | 83.28 грн |
| 100+ | 56.01 грн |
| 500+ | 41.61 грн |
| 1000+ | 38.09 грн |
| IPD60R280P7SAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 10422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.96 грн |
| 10+ | 60.89 грн |
| 100+ | 40.56 грн |
| 500+ | 29.86 грн |
| 1000+ | 27.22 грн |
| IPD60R360P7SAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 1844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.66 грн |
| 10+ | 55.22 грн |
| 100+ | 36.46 грн |
| 500+ | 26.66 грн |
| 1000+ | 24.23 грн |
| IPD60R600P7SAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 33674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.46 грн |
| 10+ | 51.04 грн |
| 100+ | 33.50 грн |
| 500+ | 24.39 грн |
| 1000+ | 22.11 грн |
| DF11MR12W1M1B11BOMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| BSC110N15NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
на замовлення 27326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 343.28 грн |
| 10+ | 217.52 грн |
| 100+ | 153.22 грн |
| 500+ | 118.02 грн |
| 1000+ | 109.75 грн |
| 2000+ | 104.83 грн |
| ESD110B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
на замовлення 14999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 14+ | 22.24 грн |
| 100+ | 14.13 грн |
| 500+ | 9.96 грн |
| 1000+ | 8.89 грн |
| 2000+ | 7.99 грн |
| 5000+ | 6.90 грн |
| AUIRS21811STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 4818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.32 грн |
| 10+ | 153.27 грн |
| 25+ | 140.35 грн |
| 100+ | 118.46 грн |
| 250+ | 112.13 грн |
| 500+ | 110.29 грн |
| AUIRF7675M2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.97 грн |
| AUIRS21271STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.80 грн |
| 10+ | 170.21 грн |
| 25+ | 156.11 грн |
| 100+ | 131.98 грн |
| 250+ | 125.04 грн |
| 500+ | 123.53 грн |
| BAS7004WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 7600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 21+ | 14.77 грн |
| 100+ | 9.27 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.71 грн |
| IPT111N20NFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 512.21 грн |
| 10+ | 350.79 грн |
| 100+ | 256.79 грн |
| 500+ | 234.25 грн |
| TLE5012BE3005XUMA1 |
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Виробник: Infineon Technologies
Description: SPEED SENSORS 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.72 грн |
| 5+ | 219.83 грн |
| 10+ | 210.21 грн |
| 25+ | 186.42 грн |
| 50+ | 179.04 грн |
| 100+ | 172.26 грн |
| 500+ | 156.03 грн |
| 1000+ | 151.03 грн |
| ICE2QS02GXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 11V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 150kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 11V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 150kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 64.85 грн |
| 25+ | 58.80 грн |
| 100+ | 48.92 грн |
| 250+ | 45.93 грн |
| 500+ | 44.13 грн |
| 1000+ | 41.95 грн |
| PVT212S-TPBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 550MA 0-150V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 574.21 грн |
| PVT412AS-TPBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 240 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 240 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 423.10 грн |
| 10+ | 362.88 грн |
| 25+ | 346.48 грн |
| 50+ | 314.04 грн |
| 100+ | 303.26 грн |
| 250+ | 289.58 грн |
| IPT65R033G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC160N15NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Description: MOSFET N-CH 150V 56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
на замовлення 8078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.27 грн |
| 10+ | 141.48 грн |
| 100+ | 98.16 грн |
| 500+ | 74.74 грн |
| 1000+ | 73.07 грн |
| IPD80R2K8CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 51.94 грн |
| 100+ | 38.65 грн |
| IPB015N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 531.59 грн |
| 10+ | 346.17 грн |
| 100+ | 252.40 грн |
| 500+ | 221.73 грн |
| BAR6503WE6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 30V 250MW PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 11254 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 35+ | 8.73 грн |
| 39+ | 7.70 грн |
| 100+ | 6.16 грн |
| 250+ | 5.65 грн |
| 500+ | 5.34 грн |
| 1000+ | 5.01 грн |
| BAS7005WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 1419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 20+ | 15.30 грн |
| 100+ | 9.54 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.86 грн |
| BTS500151TADATMA2 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-263-7
Fault Protection: Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-263-7
Fault Protection: Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.40 грн |
| 10+ | 295.95 грн |
| 25+ | 273.29 грн |
| 100+ | 233.10 грн |
| 250+ | 224.06 грн |
| TLE9879QXA40XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.78 грн |
| 10+ | 287.51 грн |
| 25+ | 265.53 грн |
| 100+ | 226.55 грн |
| 250+ | 215.74 грн |
| 500+ | 209.23 грн |
| 1000+ | 200.53 грн |
| IFX1763XEJV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
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| IFX54441EJV50XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
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| IFX54441LDV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 300MA TSON-10
Description: IC REG LINEAR 3.3V 300MA TSON-10
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| XDPL8105XUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
на замовлення 34555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.14 грн |
| 10+ | 97.75 грн |
| 25+ | 92.17 грн |
| 100+ | 73.71 грн |
| 250+ | 69.21 грн |
| 500+ | 60.56 грн |
| 1000+ | 49.35 грн |
| TLD1125ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Description: IC LED DRVR LIN PWM 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
на замовлення 4988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.09 грн |
| 10+ | 45.07 грн |
| 25+ | 40.71 грн |
| 100+ | 33.67 грн |
| 250+ | 31.50 грн |
| 500+ | 30.19 грн |
| 1000+ | 28.64 грн |
| TLD1311ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Not For New Designs
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Not For New Designs
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| TLD1326ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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