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DT92N16KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.6KV 160A MODULE
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DT92N2014KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE VDRM 1200V 160A
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DT92N2516KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.5 kV
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DT250N2014KOFHPSA1 Infineon Technologies TT250N.pdf Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.4 kV
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DT250N2016KOFHPSA1 Infineon Technologies TT250N.pdf Description: SCR MODULE VDRM 1200V 410A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2 kV
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DT250N2516KOFHPSA1 Infineon Technologies TT250N.pdf Description: SCR MODULE VDRM 1200V 410A
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DT250N2518KOFHPSA1 Infineon Technologies TT250N.pdf Description: SCR MODULE VDRM 1200V 410A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.5 kV
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S25FL164K0XMFB003 S25FL164K0XMFB003 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
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1EDN7511BXTSA1 1EDN7511BXTSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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1EDN8511BXTSA1 1EDN8511BXTSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRV HALF BRD/LOW SOT23-6
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AUIR3241STR AUIR3241STR Infineon Technologies Infineon-AUIR3241STR-DS-v01_01-EN.pdf?fileId=5546d4625ee5d4cd015eebed858a5b82 Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 36V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-903
Rise / Fall Time (Typ): 6µs, 6µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+97.26 грн
Мінімальне замовлення: 2500
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BGM12LBA9E6327XTSA1 Infineon Technologies Description: RX TXRX MODULE BLUETOOTH SMD
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BGM13GBA9E6327XTSA1 Infineon Technologies Description: MULTI CHIP MODULES
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BGM13HBA9E6327XTSA1 Infineon Technologies Description: MULTI CHIP MODULES
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BGM15LBA12E6327XTSA1 Infineon Technologies Description: RX TXRX MODULE BLUETOOTH SMD
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BGM17LBA15E6327XTSA1 Infineon Technologies Description: MULTI CHIP MODULES
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BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 Infineon Technologies Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6 Description: MOSFET N-CH 60V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
5000+60.78 грн
Мінімальне замовлення: 5000
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EAMXXX11XFSA1 Infineon Technologies Description: DIF
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ESD131B1W0201E6327XTSA1 ESD131B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Description: TVS DIODE 5.5VWM 13VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 26W
Power Line Protection: No
Part Status: Active
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ESD245B1W0201E6327XTSA1 ESD245B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD245-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395340a60ec Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
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ESD246B1W01005E6327XTSA1 ESD246B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD246-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf3950edd60e5 Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
15000+1.25 грн
30000+1.15 грн
Мінімальне замовлення: 15000
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ESD249B1W0201E6327XTSA1 ESD249B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD249-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce93f28dd4887 Description: TVS DIODE 18VWM 23VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 4.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
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ICE5GR4780AGXUMA1 ICE5GR4780AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
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ICE5GSAGXUMA1 ICE5GSAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
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IFCM15S60GDXKMA1 IFCM15S60GDXKMA1 Infineon Technologies Infineon-IFCM15S60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b921eb7ce0 Description: IFPS MODULE 650V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 650 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
1+1205.01 грн
10+827.36 грн
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IGB50N65H5ATMA1 IGB50N65H5ATMA1 Infineon Technologies Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0 Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+81.21 грн
Мінімальне замовлення: 1000
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IGB50N65S5ATMA1 IGB50N65S5ATMA1 Infineon Technologies Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+86.51 грн
2000+78.20 грн
Мінімальне замовлення: 1000
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IKY40N120CH3XKSA1 IKY40N120CH3XKSA1 Infineon Technologies Infineon-IKY40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd81786540530 Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+566.31 грн
30+315.67 грн
120+265.17 грн
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IKY50N120CH3XKSA1 IKY50N120CH3XKSA1 Infineon Technologies Infineon-IKY50N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817779d052e Description: IGBT 1200V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 32ns/296ns
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
1+716.19 грн
30+407.19 грн
120+345.16 грн
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IKY75N120CH3XKSA1 IKY75N120CH3XKSA1 Infineon Technologies Infineon-IKY75N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd8176aea052c Description: IGBT 1200V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 38ns/303ns
Switching Energy: 3.4mJ (on), 2.9mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
1+1000.63 грн
30+586.12 грн
120+503.39 грн
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 Infineon Technologies Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
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IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 Infineon Technologies Infineon-IKZ75N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8174dcd0528 Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 46ns/405ns
Switching Energy: 1.3mJ (on), 1.5mJ (off)
Test Condition: 400V, 15A, 22.3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R080P7XKSA1 IPA60R080P7XKSA1 Infineon Technologies Infineon-IPA60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a15b2bd5ec3 Description: MOSFET N-CH 600V 37A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+342.34 грн
50+171.06 грн
100+155.70 грн
В кошику  од. на суму  грн.
IPA60R099P7XKSA1 IPA60R099P7XKSA1 Infineon Technologies Infineon-IPA60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b198c14f14acc Description: MOSFET N-CH 600V 31A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
2+309.13 грн
50+146.38 грн
100+138.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R120P7XKSA1 IPA60R120P7XKSA1 Infineon Technologies infineon-ipa60r120p7-datasheet-en.pdf Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
2+266.55 грн
50+129.93 грн
100+117.65 грн
500+90.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P7SXKSA1 IPA60R280P7SXKSA1 Infineon Technologies Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
3+119.22 грн
50+43.77 грн
100+43.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280P7XKSA1 IPA60R280P7XKSA1 Infineon Technologies infineon-ipa60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 Infineon Technologies Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)
4+113.26 грн
50+51.88 грн
100+46.26 грн
500+34.15 грн
1000+31.18 грн
2000+28.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R600P7SXKSA1 IPA60R600P7SXKSA1 Infineon Technologies Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
4+101.34 грн
50+45.92 грн
100+40.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R600P7XKSA1 IPA60R600P7XKSA1 Infineon Technologies Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAN70R600P7SXKSA1 IPAN70R600P7SXKSA1 Infineon Technologies Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8 Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAN80R360P7XKSA1 IPAN80R360P7XKSA1 Infineon Technologies Infineon-IPAN80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015bcdb8328d6d69 Description: MOSFET N-CH 800V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R280P7SXKSA1 IPAW60R280P7SXKSA1 Infineon Technologies infineon-ipaw60r280p7s-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R600P7SXKSA1 IPAW60R600P7SXKSA1 Infineon Technologies infineon-ipaw60r600p7s-ds-en.pdf Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB032N10N5ATMA1 IPB032N10N5ATMA1 Infineon Technologies Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+120.67 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB048N15N5LFATMA1 IPB048N15N5LFATMA1 Infineon Technologies Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c Description: MOSFET N-CH 150V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 255µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB083N15N5LFATMA1 IPB083N15N5LFATMA1 Infineon Technologies Infineon-IPB083N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b57cf380303f5 Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 134µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R180P7SAUMA1 IPD60R180P7SAUMA1 Infineon Technologies Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+36.40 грн
5000+33.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R280P7ATMA1 IPD60R280P7ATMA1 Infineon Technologies Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 Infineon Technologies Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+29.27 грн
5000+26.15 грн
7500+25.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 Infineon Technologies Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+23.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 Infineon Technologies Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+19.05 грн
5000+16.89 грн
7500+16.15 грн
12500+14.37 грн
17500+14.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPN60R360P7SATMA1 IPN60R360P7SATMA1 Infineon Technologies Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+25.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R600P7SATMA1 IPN60R600P7SATMA1 Infineon Technologies Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8 Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
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IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 Infineon Technologies Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
3000+13.90 грн
6000+12.29 грн
9000+11.73 грн
15000+10.42 грн
21000+10.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN70R360P7SATMA1 IPN70R360P7SATMA1 Infineon Technologies Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3 Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
товару немає в наявності
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IPN70R600P7SATMA1 IPN70R600P7SATMA1 Infineon Technologies Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
товару немає в наявності
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 Infineon Technologies infineon-ipn70r900p7s-ds-en.pdf Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN80R900P7ATMA1 IPN80R900P7ATMA1 Infineon Technologies Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPP60R060P7XKSA1 IPP60R060P7XKSA1 Infineon Technologies Infineon-IPP60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf20660227 Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
1+415.58 грн
50+210.67 грн
100+192.39 грн
В кошику  од. на суму  грн.
DT92N16KOFHPSA1 TT92N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
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DT92N2014KOFHPSA1 TT92N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
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DT92N2516KOFHPSA1 TT92N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 160A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 2.5 kV
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DT250N2014KOFHPSA1 TT250N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.4 kV
товару немає в наявності
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DT250N2016KOFHPSA1 TT250N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 410A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2 kV
товару немає в наявності
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DT250N2516KOFHPSA1 TT250N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 410A
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DT250N2518KOFHPSA1 TT250N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 410A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.5 kV
товару немає в наявності
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S25FL164K0XMFB003 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XMFB003
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
товару немає в наявності
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1EDN7511BXTSA1 Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN7511BXTSA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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1EDN8511BXTSA1 Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN8511BXTSA1
Виробник: Infineon Technologies
Description: IC GATE DRV HALF BRD/LOW SOT23-6
товару немає в наявності
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AUIR3241STR Infineon-AUIR3241STR-DS-v01_01-EN.pdf?fileId=5546d4625ee5d4cd015eebed858a5b82
AUIR3241STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 36V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-903
Rise / Fall Time (Typ): 6µs, 6µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+97.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BGM12LBA9E6327XTSA1
Виробник: Infineon Technologies
Description: RX TXRX MODULE BLUETOOTH SMD
товару немає в наявності
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BGM13GBA9E6327XTSA1
Виробник: Infineon Technologies
Description: MULTI CHIP MODULES
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BGM13HBA9E6327XTSA1
Виробник: Infineon Technologies
Description: MULTI CHIP MODULES
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BGM15LBA12E6327XTSA1
Виробник: Infineon Technologies
Description: RX TXRX MODULE BLUETOOTH SMD
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BGM17LBA15E6327XTSA1
Виробник: Infineon Technologies
Description: MULTI CHIP MODULES
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BSC027N06LS5ATMA1 Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6
BSC027N06LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+60.78 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
EAMXXX11XFSA1
Виробник: Infineon Technologies
Description: DIF
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ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
ESD131B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 26W
Power Line Protection: No
Part Status: Active
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ESD245B1W0201E6327XTSA1 Infineon-ESD245-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395340a60ec
ESD245B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
Part Status: Active
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ESD246B1W01005E6327XTSA1 Infineon-ESD246-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf3950edd60e5
ESD246B1W01005E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 7.5V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 44W
Power Line Protection: No
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+1.25 грн
30000+1.15 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD249B1W0201E6327XTSA1 Infineon-ESD249-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce93f28dd4887
ESD249B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 23VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 4.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 72W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
ICE5GR4780AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR4780AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5GSAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5GSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
товару немає в наявності
В кошику  од. на суму  грн.
IFCM15S60GDXKMA1 Infineon-IFCM15S60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b921eb7ce0
IFCM15S60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULE 650V 30A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 650 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1205.01 грн
10+827.36 грн
В кошику  од. на суму  грн.
IGB50N65H5ATMA1 Infineon-IGB50N65H5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bd7432ff0
IGB50N65H5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+81.21 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IGB50N65S5ATMA1 Infineon-IGB50N65S5-DS-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bbc6f2fec
IGB50N65S5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+86.51 грн
2000+78.20 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IKY40N120CH3XKSA1 Infineon-IKY40N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd81786540530
IKY40N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 30ns/280ns
Switching Energy: 2.18mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+566.31 грн
30+315.67 грн
120+265.17 грн
В кошику  од. на суму  грн.
IKY50N120CH3XKSA1 Infineon-IKY50N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd817779d052e
IKY50N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 100A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 32ns/296ns
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+716.19 грн
30+407.19 грн
120+345.16 грн
В кошику  од. на суму  грн.
IKY75N120CH3XKSA1 Infineon-IKY75N120CH3-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015bd8176aea052c
IKY75N120CH3XKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Supplier Device Package: PG-TO247-4
Td (on/off) @ 25°C: 38ns/303ns
Switching Energy: 3.4mJ (on), 2.9mJ (off)
Test Condition: 600V, 75A, 6Ohm, 15V
Gate Charge: 370 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 938 W
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1000.63 грн
30+586.12 грн
120+503.39 грн
В кошику  од. на суму  грн.
IKZ50N65ES5XKSA1 Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a
IKZ50N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
товару немає в наявності
В кошику  од. на суму  грн.
IKZ75N65ES5XKSA1 Infineon-IKZ75N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8174dcd0528
IKZ75N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 46ns/405ns
Switching Energy: 1.3mJ (on), 1.5mJ (off)
Test Condition: 400V, 15A, 22.3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R080P7XKSA1 Infineon-IPA60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a15b2bd5ec3
IPA60R080P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+342.34 грн
50+171.06 грн
100+155.70 грн
В кошику  од. на суму  грн.
IPA60R099P7XKSA1 Infineon-IPA60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b198c14f14acc
IPA60R099P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.13 грн
50+146.38 грн
100+138.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R120P7XKSA1 infineon-ipa60r120p7-datasheet-en.pdf
IPA60R120P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+266.55 грн
50+129.93 грн
100+117.65 грн
500+90.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R280P7SXKSA1 Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f
IPA60R280P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.22 грн
50+43.77 грн
100+43.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280P7XKSA1 infineon-ipa60r280p7-datasheet-en.pdf
IPA60R280P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+113.26 грн
50+51.88 грн
100+46.26 грн
500+34.15 грн
1000+31.18 грн
2000+28.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
IPA60R600P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.34 грн
50+45.92 грн
100+40.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R600P7XKSA1 Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f
IPA60R600P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
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IPAN70R600P7SXKSA1 Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8
IPAN70R600P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAN80R360P7XKSA1 Infineon-IPAN80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015bcdb8328d6d69
IPAN80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R280P7SXKSA1 infineon-ipaw60r280p7s-datasheet-en.pdf
IPAW60R280P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R600P7SXKSA1 infineon-ipaw60r600p7s-ds-en.pdf
IPAW60R600P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB032N10N5ATMA1 Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca
IPB032N10N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+120.67 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB048N15N5LFATMA1 Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c
IPB048N15N5LFATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 255µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB083N15N5LFATMA1 Infineon-IPB083N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b57cf380303f5
IPB083N15N5LFATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 134µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
IPD60R180P7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+36.40 грн
5000+33.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R280P7ATMA1 Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37
IPD60R280P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280P7SAUMA1 Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38
IPD60R280P7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.27 грн
5000+26.15 грн
7500+25.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
IPD60R360P7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.05 грн
5000+16.89 грн
7500+16.15 грн
12500+14.37 грн
17500+14.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
IPN60R360P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+25.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R600P7SATMA1 Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8
IPN60R600P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN70R1K4P7SATMA1 Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba
IPN70R1K4P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.90 грн
6000+12.29 грн
9000+11.73 грн
15000+10.42 грн
21000+10.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN70R360P7SATMA1 Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3
IPN70R360P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN70R600P7SATMA1 Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc
IPN70R600P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN70R900P7SATMA1 infineon-ipn70r900p7s-ds-en.pdf
IPN70R900P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN80R900P7ATMA1 Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f
IPN80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPP60R060P7XKSA1 Infineon-IPP60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf20660227
IPP60R060P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+415.58 грн
50+210.67 грн
100+192.39 грн
В кошику  од. на суму  грн.
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