Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149796) > Сторінка 392 з 2497
| Фото | Назва | Виробник | Інформація |
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1ED3431MU12MXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GT DVR DSO16-28Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1ED3431MU12MXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GT DVR DSO16-28Packaging: Cut Tape (CT) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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BAS21UE6327 | Infineon Technologies |
Description: HIGH SPEED SWITCHING DIODE |
на замовлення 281170 шт: термін постачання 21-31 дні (днів) |
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IPW65R019C7 | Infineon Technologies |
Description: 75A, 650V, 0.019OHM, N-CHANNEL MPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.92mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW65R041CFD7XKSA1 | Infineon Technologies |
Description: 650V FET COOLMOS TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V |
на замовлення 187 шт: термін постачання 21-31 дні (днів) |
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TLE4254GSXUMA4 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF900R12IP4PBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 900APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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| FF900R12ME7B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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FF900R12IE4VBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
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FF900R12IP4VBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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FF900R12IP4DVBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FF900R12ME7B11NPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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F3L400R07ME4B23BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 450A 1150WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1150 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY25811SXC | Infineon Technologies |
Description: IC CLOCK GEN 3.3V SS 8-SOIC |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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BSC052N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 95A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS712N1NT | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 Features: Auto Restart, Status Flag Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 165mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-20-31 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4263GMXUMA2 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-61Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-61 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Wake-Up, Watchdog Grade: Automotive Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4923HALA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-3-6Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SIP, SSO-3-06 Output Type: Digital Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 18V Technology: Hall Effect Current - Supply (Max): 13.6mA Supplier Device Package: P-SSO-3-6 Part Status: Obsolete |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TLE4927CXAAD47XAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH DYN HALL EFFECTPackaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TLE4925C | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-3-9 |
на замовлення 61290 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4925CHAMA3 | Infineon Technologies |
Description: DYNAMIC DIFFERENTIAL HALL EFFECTPackaging: Bulk Package / Case: 3-SSIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3.3V ~ 18V Technology: Hall Effect Current - Output (Max): 50mA Current - Supply (Max): 9mA Supplier Device Package: PG-SSO-3-91 |
на замовлення 61290 шт: термін постачання 21-31 дні (днів) |
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| TLE4926CHTNE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SPEED SENSORSPackaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 11498 шт: термін постачання 21-31 дні (днів) |
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TLE4928CE6547 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSORPackaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 10460 шт: термін постачання 21-31 дні (днів) |
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TLE4928C-NE6947 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSOR |
на замовлення 64500 шт: термін постачання 21-31 дні (днів) |
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TLE4928C-N E6947 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSORPackaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLE4926C-HTNE6547 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSOR |
на замовлення 3675 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTNE6547 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSOR |
на замовлення 3750 шт: термін постачання 21-31 дні (днів) |
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| TLE4925CHAMA2 | Infineon Technologies |
Description: DYNAMIC DIFFERENTIAL HALL EFFECTPackaging: Bulk Package / Case: 3-SSIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3.3V ~ 18V Technology: Hall Effect Current - Output (Max): 50mA Current - Supply (Max): 9mA Supplier Device Package: PG-SSO-3-91 |
на замовлення 13058 шт: термін постачання 21-31 дні (днів) |
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| TLE4928CXAAF47XAMA1 | Infineon Technologies |
Description: TLE4928C - DYNAMIC DIFFERENTIAL |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| TLE4924CB2E6547XTMA1 | Infineon Technologies |
Description: IC HALL EFFECT SENSOR SSOM-3Packaging: Bulk Part Status: Discontinued at Digi-Key |
на замовлення 39070 шт: термін постачання 21-31 дні (днів) |
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TLE4928CE6547HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Bulk Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1371 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTE6747HAMA1 | Infineon Technologies |
Description: IC HALL EFFECT SENSOR SSO-3Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 3.3V ~ 18V Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: PG-SSO-3-91 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TLE4928CNE6947HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH BIPOLAR 3SSOPackaging: Bulk Output Type: Open Drain Polarization: North Pole, South Pole Function: Bipolar Switch Technology: Hall Effect |
на замовлення 76500 шт: термін постачання 21-31 дні (днів) |
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TLE4922XINFHALA1 | Infineon Technologies |
Description: SENSOR HALL ANALOG SSO4-1Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4922XINFHALA1 | Infineon Technologies |
Description: SENSOR HALL ANALOG SSO4-1Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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TLE4928HALA1 | Infineon Technologies | Description: MAGNETIC SWITCH SPEC PURP SSO-3 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
Description: SENSOR HALL ANALOG SSO4-1Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
Description: SENSOR HALL ANALOG SSO4-1Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1096 шт: термін постачання 21-31 дні (днів) |
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| TLE4926CHTE6547HAMA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT SSO-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPB80R290C3AATMA2 | Infineon Technologies |
Description: MOSFET N-CH 800V 17A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPB80R290C3AATMA2 | Infineon Technologies |
Description: MOSFET N-CH 800V 17A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 2144 шт: термін постачання 21-31 дні (днів) |
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ICE3AR10080JZ | Infineon Technologies |
Description: ICE3AR10080 - FIXED FREQUENCY COPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -20°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 17 V Control Features: Soft Start Part Status: Active Power (Watts): 22 W |
на замовлення 6167 шт: термін постачання 21-31 дні (днів) |
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ICE3A2065 | Infineon Technologies |
Description: ICE3A2065 - FIXED FREQUENCY COOLPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V Supplier Device Package: PG-DIP-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Active Power (Watts): 57 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRL530NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRL530NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 27A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 27A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
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BSS126IXTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS126IXTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 4598 шт: термін постачання 21-31 дні (днів) |
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| BSS126 H6906 | Infineon Technologies |
Description: SMALL SIGNAL N-CHANNEL MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TDA4916GG | Infineon Technologies |
Description: SWITCHING CONTROLLERPackaging: Bulk Part Status: Active |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
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BTS5210G | Infineon Technologies |
Description: BUFFER/INVERTER BASED PERIPHERALPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PX8897EDQGR2ER1232AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PX8897EDQGR2ER1233AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ADM6992X-AD-T-1 | Infineon Technologies |
Description: IC ETHERNET CONVERTER 128QFPPackaging: Tray Package / Case: 128-BFQFP Function: Switch Operating Temperature: 0°C ~ 115°C Voltage - Supply: 3.135V ~ 3.465V Protocol: Ethernet Standards: 10/100 Base-FX/T/TX PHY Supplier Device Package: PG-BFQFP-128 Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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ADM6992KX-AB-T-1-INF | Infineon Technologies |
Description: NINJA: FIBER TO FAST ETHERNET COPackaging: Tray Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 2061 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRL7PP | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFS7534TRL7PP | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 1ED3431MU12MXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
товару немає в наявності
В кошику
од. на суму грн.
| 1ED3431MU12MXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 395.70 грн |
| 10+ | 280.57 грн |
| 25+ | 255.48 грн |
| 100+ | 213.85 грн |
| BAS21UE6327 |
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Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Description: HIGH SPEED SWITCHING DIODE
на замовлення 281170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3370+ | 7.29 грн |
| IPW65R019C7 |
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Виробник: Infineon Technologies
Description: 75A, 650V, 0.019OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
Description: 75A, 650V, 0.019OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPW65R041CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
на замовлення 187 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 613.78 грн |
| 30+ | 346.65 грн |
| 120+ | 292.93 грн |
| TLE4254GSXUMA4 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| FF900R12IP4PBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 205 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41848.90 грн |
| FF900R12ME7B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A
Description: IGBT MOD 1200V 900A
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FF900R12IE4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 46281.70 грн |
| FF900R12IP4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 47529.09 грн |
| FF900R12IP4DVBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 49180.45 грн |
| FF900R12ME7B11NPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15732.06 грн |
| F3L400R07ME4B23BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| CY25811SXC |
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Виробник: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-SOIC
Description: IC CLOCK GEN 3.3V SS 8-SOIC
на замовлення 176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 62+ | 366.24 грн |
| BSC052N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| BTS712N1NT |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| TLE4263GMXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4923HALA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-3-6
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP, SSO-3-06
Output Type: Digital
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 13.6mA
Supplier Device Package: P-SSO-3-6
Part Status: Obsolete
Description: MAG SWITCH SPEC PURP SSO-3-6
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP, SSO-3-06
Output Type: Digital
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 13.6mA
Supplier Device Package: P-SSO-3-6
Part Status: Obsolete
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 141.98 грн |
| TLE4927CXAAD47XAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH DYN HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH DYN HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 177.61 грн |
| TLE4925C |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-3-9
Description: MAG SWITCH SPEC PURP SSO-3-9
на замовлення 61290 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE4925CHAMA3 |
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Виробник: Infineon Technologies
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
на замовлення 61290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 126+ | 183.34 грн |
| TLE4926CHTNE6747HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 11498 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 116+ | 200.28 грн |
| TLE4928CE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 96+ | 242.64 грн |
| TLE4928C-NE6947 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 64500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 93+ | 257.36 грн |
| TLE4928C-N E6947 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 86+ | 263.60 грн |
| TLE4926C-HTNE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 3675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 93+ | 257.36 грн |
| TLE4926CHTNE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 93+ | 257.36 грн |
| TLE4925CHAMA2 |
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Виробник: Infineon Technologies
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
на замовлення 13058 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 126+ | 182.75 грн |
| TLE4928CXAAF47XAMA1 |
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Виробник: Infineon Technologies
Description: TLE4928C - DYNAMIC DIFFERENTIAL
Description: TLE4928C - DYNAMIC DIFFERENTIAL
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 137+ | 166.13 грн |
| TLE4924CB2E6547XTMA1 |
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Виробник: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSOM-3
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Description: IC HALL EFFECT SENSOR SSOM-3
Packaging: Bulk
Part Status: Discontinued at Digi-Key
на замовлення 39070 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 92+ | 260.18 грн |
| TLE4928CE6547HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1371 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 94+ | 243.84 грн |
| TLE4926CHTE6747HAMA1 |
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Виробник: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSO-3
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: PG-SSO-3-91
Description: IC HALL EFFECT SENSOR SSO-3
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: PG-SSO-3-91
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 101+ | 229.55 грн |
| TLE4928CNE6947HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Bulk
Output Type: Open Drain
Polarization: North Pole, South Pole
Function: Bipolar Switch
Technology: Hall Effect
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Bulk
Output Type: Open Drain
Polarization: North Pole, South Pole
Function: Bipolar Switch
Technology: Hall Effect
на замовлення 76500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 282.03 грн |
| TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.17 грн |
| 5+ | 185.99 грн |
| 10+ | 173.42 грн |
| 25+ | 148.29 грн |
| 50+ | 138.20 грн |
| 100+ | 128.79 грн |
| 500+ | 107.47 грн |
| 1000+ | 100.10 грн |
| TLE4928HALA1 |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEC PURP SSO-3
Description: MAGNETIC SWITCH SPEC PURP SSO-3
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 574.96 грн |
| 5+ | 487.96 грн |
| 10+ | 431.08 грн |
| 25+ | 328.24 грн |
| 50+ | 290.09 грн |
| 100+ | 282.45 грн |
| 500+ | 261.17 грн |
| TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 78.21 грн |
| TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.70 грн |
| 10+ | 161.25 грн |
| 25+ | 130.81 грн |
| 50+ | 114.22 грн |
| 100+ | 108.50 грн |
| 500+ | 91.37 грн |
| 1000+ | 84.26 грн |
| TLE4926CHTE6547HAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT SSO-3
Description: SENSOR HALL EFFECT SSO-3
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| IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 172.62 грн |
| IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 2144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 384.13 грн |
| 10+ | 280.89 грн |
| 100+ | 204.50 грн |
| 500+ | 190.94 грн |
| ICE3AR10080JZ |
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Виробник: Infineon Technologies
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
на замовлення 6167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 192+ | 119.45 грн |
| ICE3A2065 |
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Виробник: Infineon Technologies
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
товару немає в наявності
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од. на суму грн.
| IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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| IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
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од. на суму грн.
| IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.04 грн |
| 10+ | 185.51 грн |
| 100+ | 139.82 грн |
| 500+ | 116.16 грн |
| BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.35 грн |
| BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.96 грн |
| 23+ | 14.24 грн |
| 100+ | 7.72 грн |
| 500+ | 6.24 грн |
| 1000+ | 5.53 грн |
| BSS126 H6906 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
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| TDA4916GG |
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на замовлення 667 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 487+ | 43.93 грн |
| BTS5210G |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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| PX8897EDQGR2ER1232AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
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| PX8897EDQGR2ER1233AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
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| ADM6992X-AD-T-1 |
![]() |
Виробник: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 381.39 грн |
| ADM6992KX-AB-T-1-INF |
![]() |
Виробник: Infineon Technologies
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 408.10 грн |
| IRFS7534TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 110.51 грн |
| 1600+ | 104.99 грн |
| IRFS7534TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.61 грн |
| 10+ | 196.73 грн |
| 100+ | 138.38 грн |
| IRFS7534TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
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В кошику
од. на суму грн.
| IRFS7534TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
































