Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122993) > Сторінка 392 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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TC333LP32F200FAALXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 100TQFPPackaging: Tape & Reel (TR) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 248K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: DMA, I2S, PWM, WDT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-TQFP-100-23 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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2EDS8265HXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-30 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 959 шт: термін постачання 21-31 дні (днів) |
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IPL60R065C7AUMA1 | Infineon Technologies |
Description: MOSFET HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-VSON-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V |
на замовлення 4538 шт: термін постачання 21-31 дні (днів) |
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| IRF6811STR1PBF | Infineon Technologies |
Description: MOSFET N CH 25V 19A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IGD15N65T6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 30A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 230µJ (on), 110µJ (off) Test Condition: 400V, 11.5A, 47Ohm, 15V Gate Charge: 37 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 57.5 A Power - Max: 100 W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AIGB15N65H5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 30A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 24ns/22ns Switching Energy: 160µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIKB15N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 15A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Not For New Designs Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIKB15N65DF5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 15A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Not For New Designs Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PEF2260NV3.0SICOFI | Infineon Technologies | Description: SICOFI CODEC FILTER |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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2EDF7175FXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDG DSO16Gate Type: MOSFET (N-Channel, P-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 6.5ns, 4.5ns Supplier Device Package: PG-DSO-16-11 Input Type: Non-Inverting Voltage - Supply: 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1A, 2A Logic Voltage - VIL, VIH: -, 1.65V |
на замовлення 7861 шт: термін постачання 21-31 дні (днів) |
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2EDS8165HXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICMounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 1A, 2A Logic Voltage - VIL, VIH: -, 1.65V Gate Type: MOSFET (N-Channel, P-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 6.5ns, 4.5ns Supplier Device Package: PG-DSO-16-30 Input Type: Non-Inverting Voltage - Supply: 20V Operating Temperature: -40°C ~ 125°C (TA) |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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2EDF7275FXUMA2 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDG DSO16Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1500 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 12433 шт: термін постачання 21-31 дні (днів) |
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SPB10N10 G | Infineon Technologies |
Description: MOSFET N-CH 100V 10.3A TO263-3 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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BFR182E6327 | Infineon Technologies |
Description: BFR182 - LOW-NOISE SI TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB ~ 18dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 79170 шт: термін постачання 21-31 дні (днів) |
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IRFR7746PBF-INF | Infineon Technologies |
Description: MOSFET N-CH 75V 56A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC120N03LSG | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB120N03S4L03ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 120A D2PAKDrain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.2V @ 40µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSC074N15NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 114A TSON-8-3Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 136µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
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| PTAB182002TCV2XWSA1 | Infineon Technologies | Description: IC RF FET LDMOS 190W H-49248H-4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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REFENGCOOLFAN1KWTOBO1 | Infineon Technologies |
Description: DEV KITPackaging: Bulk Function: Power Supply Type: Power Management Contents: Board(s) Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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S2GO3DTLI493DW2BWA0TOBO1 | Infineon Technologies |
Description: DEV KITPackaging: Bulk Interface: I2C Voltage - Supply: 2.8V ~ 3.5V Sensor Type: Hall Effect Utilized IC / Part: TLI493D Supplied Contents: Board(s) Embedded: Yes Sensing Range: ±160mT Part Status: Active |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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TLE42062GXUMA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-18V 14DSOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DSO-14 Motor Type - AC, DC: Servo DC Part Status: Active Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE42062GXUMA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-18V 14DSOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DSO-14 Motor Type - AC, DC: Servo DC Part Status: Active Grade: Automotive |
на замовлення 4935 шт: термін постачання 21-31 дні (днів) |
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BSP296NH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BSP296NH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.2A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11803 шт: термін постачання 21-31 дні (днів) |
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| 62-1039PBF | Infineon Technologies |
Description: IC MOSFET Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT17-05WH6327 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODEPart Status: Active Supplier Device Package: PG-SOT323-3-1 Voltage - Peak Reverse (Max): 4V Resistance @ If, F: 15Ohm @ 5mA, 10kHz Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Schottky - 1 Pair Common Cathode Package / Case: SC-70, SOT-323 Packaging: Bulk Power Dissipation (Max): 150 mW Current - Max: 130 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAT17-05E6327HTSA1 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODEPackaging: Bulk Power Dissipation (Max): 150 mW Current - Max: 130 mA Part Status: Active Supplier Device Package: PG-SOT23-3-3 Voltage - Peak Reverse (Max): 4V Resistance @ If, F: 15Ohm @ 5mA, 10kHz Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Schottky - 1 Pair Common Cathode Package / Case: TO-236-3, SC-59, SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT17-06WE6327 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT323Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2443 шт: термін постачання 21-31 дні (днів) |
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BAT17-06WH6327 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODEPower Dissipation (Max): 150 mW Current - Max: 130 mA Part Status: Active Supplier Device Package: PG-SOT323-3-1 Voltage - Peak Reverse (Max): 4V Resistance @ If, F: 15Ohm @ 5mA, 10kHz Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Schottky - 1 Pair Common Anode Package / Case: SC-70, SOT-323 Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAT-17-07 | Infineon Technologies |
Description: MIXER DIODE, VHF TO UHFOperating Temperature: 150°C (TJ) Diode Type: Schottky - 2 Independent Package / Case: TO-253-4, TO-253AA Packaging: Bulk Power Dissipation (Max): 150 mW Current - Max: 130 mA Part Status: Active Supplier Device Package: PG-SOT143-4 Voltage - Peak Reverse (Max): 4V Resistance @ If, F: 15Ohm @ 5mA, 10kHz Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT1707E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT143-4Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 11277 шт: термін постачання 21-31 дні (днів) |
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BAT17E6327 | Infineon Technologies |
Description: BAT17 - RF MIXER AND DETECTOR SC |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
| BAT1707E6327 | Infineon Technologies |
Description: MIXER DIODE, VHF TO UHF Packaging: Bulk Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM200GA120DN2FS | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DD89N16KKHPSA1 | Infineon Technologies |
Description: DIODE ARRAY MOD 1200V 140A |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||||||||||||||
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TLF11251EPXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.35V ~ 7V Input Type: Non-Inverting Supplier Device Package: PG-TSDSO-14-5 Rise / Fall Time (Typ): 60ns, 60ns Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 2.31V, 4.69V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1664 шт: термін постачання 21-31 дні (днів) |
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TDA5201 | Infineon Technologies |
Description: ASK SINGLE CONVERSION RECEIVERPackaging: Bulk Features: RSSI Equipped Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -113dBm Mounting Type: Surface Mount Frequency: 315MHz ~ 345MHz Modulation or Protocol: ASK Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Applications: Alarm Systems, Communication Systems, Remote Control Systems Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 40048 шт: термін постачання 21-31 дні (днів) |
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TDA5201GEG | Infineon Technologies |
Description: ASK SINGLE CONVERSION RECEIVERFrequency: 315MHz ~ 345MHz Mounting Type: Surface Mount Sensitivity: -113dBm Package / Case: 28-TSSOP (0.173", 4.40mm Width) Features: RSSI Equipped Packaging: Bulk Part Status: Active Supplier Device Package: PG-TSSOP-28 Antenna Connector: PCB, Surface Mount Applications: Alarm Systems, Communication Systems Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Modulation or Protocol: ASK |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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PEF 80902 H V1.1 | Infineon Technologies |
Description: IC TELECOM INTERFACE MQFP-44Packaging: Tray Package / Case: 44-QFP Mounting Type: Surface Mount Function: Second Generation Modular Interface: ISDN Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: P-MQFP-44 Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS16E6393 | Infineon Technologies |
Description: RECTIFIER DIODE |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 11269 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS16E6433HTMA1 | Infineon Technologies |
Description: DIODE STANDARD 80V 250MA PGSOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1677539 шт: термін постачання 21-31 дні (днів) |
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BGS12P2L6E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: GSM, LTE, W-CDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.4V Insertion Loss: 0.51dB Frequency Range: 50MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 27dB Supplier Device Package: PG-TSLP-6-4 IIP3: 74dBm |
на замовлення 224344 шт: термін постачання 21-31 дні (днів) |
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IRS26072DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICDigiKey Programmable: Not Verified Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk Part Status: Obsolete Current - Peak Output (Source, Sink): 200mA, 350mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 150ns, 50ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) |
на замовлення 14705 шт: термін постачання 21-31 дні (днів) |
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IRS2609DSTRPBF-INF | Infineon Technologies |
Description: IRS2609D - HALF-BRIDGE DRIVER Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 150ns, 50ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk Part Status: Active Current - Peak Output (Source, Sink): 200mA, 350mA Logic Voltage - VIL, VIH: 0.8V, 2.2V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9015QUXUMA1 | Infineon Technologies |
Description: IC BATT BALANCER TQFP-48-11Supplier Device Package: PG-TQFP-48-11 Interface: UART Function: Battery Balancer Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9015QUXUMA1 | Infineon Technologies |
Description: IC BATT BALANCER TQFP-48-11Supplier Device Package: PG-TQFP-48-11 Interface: UART Function: Battery Balancer Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PROFETMOTHERBRDTOBO1 | Infineon Technologies |
Description: MOTHERBOARD PROFET 12V/24VPart Status: Active Supplied Contents: Board(s) Type: Interface Function: Automotive Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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SPOC2MOTHERBOARDTOBO1 | Infineon Technologies |
Description: SPOC+2 MOTHERBOARDPart Status: Active Supplied Contents: Board(s) Type: Power Management Function: Switch Packaging: Box Secondary Attributes: Graphical User Interface (GUI) Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TDA21201-S7 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO220-7Packaging: Tube Features: Bootstrap Circuit Package / Case: TO-220-7 Mounting Type: Through Hole Interface: PWM Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 9V ~ 15V Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 9V ~ 15V Supplier Device Package: P-TO220-7-230 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Obsolete |
на замовлення 358 шт: термін постачання 21-31 дні (днів) |
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IPB120P04P404ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 340µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPB120P04P404ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 340µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15627 шт: термін постачання 21-31 дні (днів) |
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IPB120P04P404ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 340µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IPB120P04P404ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 340µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6665 шт: термін постачання 21-31 дні (днів) |
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IDD03SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 3A PGTO2523Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
на замовлення 627 шт: термін постачання 21-31 дні (днів) |
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TLT807B0EPVXUMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 70MA TSDSO14Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 70mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): 20V Supplier Device Package: PG-TSDSO-14-1 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 70mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLT807B0EPVXUMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 70MA TSDSO14Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 70mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 70mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): 20V Supplier Device Package: PG-TSDSO-14-1 Number of Regulators: 1 Voltage - Input (Max): 42V |
на замовлення 2618 шт: термін постачання 21-31 дні (днів) |
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IPD90P04P4L04ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6836 шт: термін постачання 21-31 дні (днів) |
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| TC333LP32F200FAALXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2EDS8265HXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.22 грн |
| 10+ | 173.94 грн |
| 25+ | 159.63 грн |
| 100+ | 135.04 грн |
| 250+ | 128.00 грн |
| 500+ | 126.66 грн |
| IPL60R065C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 4538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.97 грн |
| 10+ | 318.78 грн |
| 100+ | 241.08 грн |
| IRF6811STR1PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 25V 19A DIRECTFET
Description: MOSFET N CH 25V 19A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IGD15N65T6ARMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AIGB15N65H5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
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| AIKB15N65DH5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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В кошику
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| AIKB15N65DF5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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| PEF2260NV3.0SICOFI |
Виробник: Infineon Technologies
Description: SICOFI CODEC FILTER
Description: SICOFI CODEC FILTER
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 1212.23 грн |
| 2EDF7175FXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-11
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Description: IC GATE DRVR HALF-BRIDG DSO16
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-11
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
на замовлення 7861 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.06 грн |
| 10+ | 118.50 грн |
| 25+ | 108.26 грн |
| 100+ | 91.03 грн |
| 250+ | 85.99 грн |
| 500+ | 82.95 грн |
| 1000+ | 79.14 грн |
| 2EDS8165HXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.33 грн |
| 10+ | 107.60 грн |
| 25+ | 98.14 грн |
| 100+ | 82.39 грн |
| 250+ | 77.76 грн |
| 500+ | 74.97 грн |
| 2EDF7275FXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 12433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.05 грн |
| 10+ | 141.26 грн |
| 25+ | 129.33 грн |
| 100+ | 108.97 грн |
| 250+ | 103.07 грн |
| 500+ | 101.04 грн |
| SPB10N10 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO263-3
Description: MOSFET N-CH 100V 10.3A TO263-3
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| BFR182E6327 |
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Виробник: Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 79170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3480+ | 6.97 грн |
| IRFR7746PBF-INF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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| BSC120N03LSG |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Description: POWER FIELD-EFFECT TRANSISTOR, 1
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| IPB120N03S4L03ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Description: MOSFET N-CH 30V 120A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 195+ | 103.07 грн |
| BSC074N15NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.91 грн |
| 10+ | 226.92 грн |
| 100+ | 161.77 грн |
| PTAB182002TCV2XWSA1 |
Виробник: Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4
Description: IC RF FET LDMOS 190W H-49248H-4
товару немає в наявності
В кошику
од. на суму грн.
| REFENGCOOLFAN1KWTOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 61709.00 грн |
| S2GO3DTLI493DW2BWA0TOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1036.05 грн |
| TLE42062GXUMA2 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Part Status: Active
Grade: Automotive
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Part Status: Active
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE42062GXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Part Status: Active
Grade: Automotive
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Part Status: Active
Grade: Automotive
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.28 грн |
| 10+ | 94.99 грн |
| 25+ | 86.56 грн |
| 100+ | 72.53 грн |
| 250+ | 68.38 грн |
| 500+ | 65.88 грн |
| 1000+ | 62.77 грн |
| BSP296NH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 16.73 грн |
| 8000+ | 14.91 грн |
| BSP296NH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 47.53 грн |
| 100+ | 31.12 грн |
| 500+ | 22.58 грн |
| 1000+ | 20.45 грн |
| 2000+ | 18.65 грн |
| BAT17-05WH6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
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| BAT17-05E6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
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| BAT17-06WE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2443+ | 7.89 грн |
| BAT17-06WH6327 |
![]() |
Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4157+ | 4.95 грн |
| BAT-17-07 |
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Виробник: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 2 Independent
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT143-4
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Description: MIXER DIODE, VHF TO UHF
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 2 Independent
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT143-4
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
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| BAT1707E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 11277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 20+ | 15.00 грн |
| 25+ | 13.31 грн |
| 100+ | 10.78 грн |
| 250+ | 9.95 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.90 грн |
| BAT17E6327 |
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Виробник: Infineon Technologies
Description: BAT17 - RF MIXER AND DETECTOR SC
Description: BAT17 - RF MIXER AND DETECTOR SC
товару немає в наявності
Мінімальне замовлення: 6000 шт
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| BAT1707E6327 |
Виробник: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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| DD89N16KKHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Description: DIODE ARRAY MOD 1200V 140A
товару немає в наявності
Мінімальне замовлення: 15 шт
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| TLF11251EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.23 грн |
| 10+ | 105.14 грн |
| 25+ | 95.84 грн |
| 100+ | 80.36 грн |
| 250+ | 75.80 грн |
| 500+ | 73.34 грн |
| TDA5201 |
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Виробник: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK SINGLE CONVERSION RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 40048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 111.96 грн |
| TDA5201GEG |
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Виробник: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Frequency: 315MHz ~ 345MHz
Mounting Type: Surface Mount
Sensitivity: -113dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Features: RSSI Equipped
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Applications: Alarm Systems, Communication Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Modulation or Protocol: ASK
Description: ASK SINGLE CONVERSION RECEIVER
Frequency: 315MHz ~ 345MHz
Mounting Type: Surface Mount
Sensitivity: -113dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Features: RSSI Equipped
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Applications: Alarm Systems, Communication Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Modulation or Protocol: ASK
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 180+ | 117.98 грн |
| PEF 80902 H V1.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
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| BAS16E6393 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| BAS16E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1677539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6417+ | 3.29 грн |
| BGS12P2L6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
на замовлення 224344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 14+ | 21.42 грн |
| 25+ | 20.15 грн |
| 100+ | 17.29 грн |
| 250+ | 16.31 грн |
| 500+ | 15.62 грн |
| 1000+ | 14.72 грн |
| 5000+ | 13.37 грн |
| IRS26072DSTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
на замовлення 14705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 270+ | 82.01 грн |
| IRS2609DSTRPBF-INF |
Виробник: Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
DigiKey Programmable: Not Verified
Description: IRS2609D - HALF-BRIDGE DRIVER
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
DigiKey Programmable: Not Verified
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| TLE9015QUXUMA1 |
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Виробник: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
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| TLE9015QUXUMA1 |
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Виробник: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PROFETMOTHERBRDTOBO1 |
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Виробник: Infineon Technologies
Description: MOTHERBOARD PROFET 12V/24V
Part Status: Active
Supplied Contents: Board(s)
Type: Interface
Function: Automotive
Packaging: Box
Description: MOTHERBOARD PROFET 12V/24V
Part Status: Active
Supplied Contents: Board(s)
Type: Interface
Function: Automotive
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17709.74 грн |
| SPOC2MOTHERBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: SPOC+2 MOTHERBOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
Description: SPOC+2 MOTHERBOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17454.02 грн |
| TDA21201-S7 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 123+ | 162.72 грн |
| IPB120P04P404ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB120P04P404ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPB120P04P4L03ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 92.22 грн |
| 2000+ | 82.99 грн |
| 3000+ | 80.03 грн |
| 5000+ | 73.80 грн |
| IPB120P04P4L03ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.57 грн |
| 10+ | 167.67 грн |
| 100+ | 117.27 грн |
| 500+ | 90.33 грн |
| IPB120P04P404ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 83.53 грн |
| 2000+ | 76.24 грн |
| IPB120P04P404ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.00 грн |
| 10+ | 151.85 грн |
| 100+ | 106.22 грн |
| 500+ | 87.57 грн |
| IDD03SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.90 грн |
| 10+ | 128.35 грн |
| 100+ | 87.74 грн |
| 500+ | 66.03 грн |
| TLT807B0EPVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LIN POS ADJ 70MA TSDSO14
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLT807B0EPVXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Description: IC REG LIN POS ADJ 70MA TSDSO14
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
на замовлення 2618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.63 грн |
| 10+ | 138.27 грн |
| 25+ | 130.44 грн |
| 100+ | 104.28 грн |
| 250+ | 97.92 грн |
| 500+ | 85.68 грн |
| 1000+ | 69.83 грн |
| IPD90P04P4L04ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.70 грн |
| 10+ | 124.47 грн |
| 100+ | 85.59 грн |
| 500+ | 64.72 грн |
| 1000+ | 61.18 грн |


































